CN103579480A - Thermoelectric separated semiconductor device and method for manufacturing the same - Google Patents

Thermoelectric separated semiconductor device and method for manufacturing the same Download PDF

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Publication number
CN103579480A
CN103579480A CN201210322672.5A CN201210322672A CN103579480A CN 103579480 A CN103579480 A CN 103579480A CN 201210322672 A CN201210322672 A CN 201210322672A CN 103579480 A CN103579480 A CN 103579480A
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heater element
semiconductor device
resin substrate
bearing area
conducting wire
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邵世丰
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PHOSTEK Inc
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PHOSTEK Inc
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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    • H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
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    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
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    • H01L2224/241—Disposition
    • H01L2224/24135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/24137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
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    • H01L2224/732—Location after the connecting process
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    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
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  • Manufacturing & Machinery (AREA)
  • Led Device Packages (AREA)

Abstract

The invention provides a thermoelectric separated semiconductor device and a manufacturing method thereof. The thermoelectric separation semiconductor device comprises a metal heat sink and at least one resin substrate. The metal heat dissipation seat is provided with a bearing area for fixing at least one heating element. The resin substrate is fixed on the metal heat dissipation seat, is positioned on the same side of the metal heat dissipation seat as the heating element, and is provided with at least one conductive circuit layer for electrically coupling the heating element to form a thermoelectric separated semiconductor device.

Description

The semiconductor device of thermoelectricity separation and its manufacture method
Technical field
The present invention relates to a kind of semiconductor device and its manufacture method of thermoelectricity separation.
Background technology
After LED wafer completes, wafer must be fixed on carrier, then be electrically connected by carrier and printed circuit board (PCB).Carrier is conductive metal frames or have the metal substrate of conducting wire layer normally, and the step of fixed wafer and carrier is called " die bond ".Existing die bond mode mainly contains two kinds, and elargol engages and eutectic welding (Eutectic).
Elargol engages conventionally and uses at lower powered light-emitting diode.On the composition surface of light-emitting diode and carrier, coating mixes the silver powder of different proportion epoxy resin, and under lower technological temperature, makes epoxy resin cure, with joint wafer and carrier.
The constant intensity that elargol engages is relevant with the ratio of epoxy resin.When epoxy resin ratio is higher, constant intensity is higher, but conductivity and conductive coefficient decline; Otherwise when silver powder ratio is higher, constant intensity is lower.Under best elargol/epoxy resin ratio, its conductive coefficient only has 25W/mK in theory.In addition, elargol engages and need to use scaling powder (Flux), if after die bond, fails to be Removed All and residual, can cause die bond hole (Void), thereby cause thermal resistance to rise.
Eutectic welding, is to form welding material in bottom of wafer, itself and the material of carrier or carrier surface, and under an eutectic temperature, thus can phase counterdiffusion, fusion fixes.Use the fixing intensity of eutectic welding, be better than elargol joint method.
Yet the technological temperature of eutectic welding is high, can reach 320 ℃.The material of wafer and carrier, must can bear high temperature.In addition, the welding material of bottom of wafer is very thin, and its thickness may only have 3um.If the surface roughness of carrier is too high, die bond structure can produce hole; If carrier surface difference of height (PV) surpasses 3um, wafer meeting Hanging sectionally, cannot fit tightly with carrier, causes die bond intensity and conductive coefficient to decline.
After die bond, LED wafer is electrically connected with outside by carrier again.Prior art has structure and complex process, thermal diffusivity is bad, cost is high, and material such as selects to be limited at the shortcoming.
Summary of the invention
In view of above-mentioned, the invention provides new thermoelectricity separating semiconductor device and its manufacture method.
One embodiment of the invention provides a kind of semiconductor device of thermoelectricity separation, comprises a metal cooling seat and at least one resin substrate.Metal cooling seat has to fix one first bearing area of at least one heater element.Resin substrate is fixed on one second bearing area of metal cooling seat, is positioned at the same side of metal cooling seat with heater element, and has at least one conducting wire layer, in order to electrical couplings heater element.
Another embodiment of the present invention provides a kind of manufacture method of semiconductor device of thermoelectricity separation, comprising: a metal cooling seat is provided, and it has a bearing area; On bearing area, fix at least one heater element; On metal cooling seat, fix at least one resin substrate, resin substrate and heater element are positioned at the same side of metal cooling seat, have at least one conducting wire layer on resin substrate; By at least one wire, be electrically connected conducting wire layer and heater element on resin substrate, to form the semiconductor device of thermoelectricity separation.
According to the semiconductor device of the thermoelectricity separation of this case embodiment and its manufacture method, the heat that heater element produces, can be directly conducted to metal cooling seat, so significantly improving heat radiation efficiency.In addition, resin substrate is arranged on metal cooling seat, and the material of resin substrate can not be subject to die bond temperature limiting, and can facilitate electrical couplings heater element and external terminal.
Accompanying drawing explanation
Fig. 1 is the generalized section illustrating according to the thermoelectricity separating semiconductor device of first embodiment of the invention.
Fig. 2 is the generalized section illustrating according to the thermoelectricity separating semiconductor device of second embodiment of the invention.
Fig. 3 is the vertical view illustrating according to the thermoelectricity separating semiconductor device of third embodiment of the invention.
Fig. 4 A and Fig. 4 B are the generalized sections illustrating according to the thermoelectricity separating semiconductor device of fourth embodiment of the invention.
Fig. 5 A to 5G illustrates according to the manufacture method of a kind of thermoelectricity separating semiconductor device of fifth embodiment of the invention.
Drawing reference numeral explanation
10: metal cooling seat
10a: the first bearing area
10b: the second bearing area
10c: radiator structure
20: heater element
20a: electrode
30: resin substrate
30a: upper surface
30b: lower surface
30c: end
30d: end
40: wavelength conversion protecting cover
50: heat radiation knitting layer
60: syndeton
70: white fillings
80: retaining element
Embodiment
Fig. 1 illustrates the thermoelectricity separating semiconductor device according to first embodiment of the invention, and it mainly comprises a metal cooling seat 10, at least one heater element 20, with at least one resin substrate 30.
Metal cooling seat 10 has the first bearing area 10a, with fixing heater element 20.Preferably, between the first bearing area 10a and heater element 20, there is heat radiation knitting layer 50, for example: metallic bond layer (scolding tin), metal-polymer composite (solidifying elargol), curing thermal grease etc., so that both combine closely.Resin substrate 30 is fixed on metal cooling seat 10, and has at least one conducting wire layer (not shown), in order to electrical couplings heater element 20.As illustration, and unrestricted, in an example of the present embodiment, the quantity of heater element 20 is one, and the quantity of resin substrate 30 is two.Preferably, resin substrate 30 and heater element 20 are positioned at the same side of metal cooling seat 10, for example, and the upper side of metal cooling seat 10.
As shown in Figure 1, metal cooling seat 10 is at the opposition side of heater element 20, and for example lower side, can have radiator structure 10c, fin (fin) for example, and it can accelerate to disperse the heat that heater element 20 produces.In addition, when heater element 20 is light emitting diode, thermoelectricity isolating construction can have a wavelength conversion protecting cover 40, and its profile can be dome-type or non-sphere, and its surface, can be smooth surface, or has relief pattern to increase light extraction efficiency.Above-mentioned wavelength conversion protecting cover 40 is combined by protecting cover and material for transformation of wave length, and material for transformation of wave length is for the emission wavelength of conversion light emitting diode unit.Material for transformation of wave length can be positioned on the outer surface of protecting cover or on inner surface.In one example, material for transformation of wave length is positioned on the inner surface of protecting cover.In another example, material for transformation of wave length is distributed in protecting cover.The material of protecting cover can be epoxy resin, silica-based class or other material.
As shown in Figure 1, in an example of the present embodiment, the first bearing area 10a can be the middle section of metal cooling seat 10, and resin substrate 30 can be fixed on the second bearing area 10b of metal cooling seat 10, and the first bearing area 10a is a boss haply.
In the present embodiment, can pass through a retaining element 80, for example screw, is fixed on resin substrate 30 on metal cooling seat 10.In an example of the present embodiment, retaining element 80 is penetrating metal radiating seat 10 not.In another example, the penetrable metal cooling seat 10 of retaining element 80.In a further example, can utilize an adhesive agent to replace retaining element 80, resin substrate 30 is fixed on metal cooling seat 10.
In an example of the present embodiment, the upper surface 30a of resin substrate 10 has a conducting wire layer (not icon), and it is by syndeton 60, wire (wire) for example, the electrode 20a of electrical couplings heater element 20.Syndeton 60 can be changed protecting cover 40 by wavelength and cover.In the present embodiment, this conducting wire layer is at one end of resin substrate 10 30c coupling heater element 20, and at the other end 30d of resin substrate 10, as the end points being electrically connected with outside.Above-mentioned retaining element 80 can be used as the end points being electrically connected with outside.
In another example of the present embodiment, the upper surface 30a of resin substrate 10 and lower surface 30b respectively have a conducting wire layer (not shown), wherein be positioned at the conducting wire layer electrical couplings heater element 20 of upper surface 30a, and the conducting wire layer that is positioned at lower surface 30b can be used as the end points being electrically connected with outside.For example, metal cooling seat 10 can have at least one through hole (not shown), and its electric connection is positioned at the conducting wire layer of lower surface 30b, and as the end points with outside electric connection.The retaining element 80 of above-mentioned penetrating (or not penetrating) metal cooling seat 10, can be electrically connected the conducting wire layer that is positioned at upper surface 30a, or be electrically connected the conducting wire layer that is positioned at lower surface 30b, and retaining element 80 can be used as the end points being electrically connected with outside.
Above-mentioned heater element 20 can comprise light emitting diode, photovoltaic cell, integrated circuit component, or other electron component etc.When heater element 20 is for having the light emitting diode of transparent growth substrate, can select to be fixed on boss, thereby can avoid resin substrate 30 to stop the lateral light being derived by transparent growth substrate.Above-mentioned transparent growth substrate comprises sapphire, silicon nitride etc.
Above-mentioned resin substrate 30 comprises insulating barrier and at least one conducting wire layer that covers insulating barrier.Insulating barrier is contacting metal radiating seat 10 directly.The material of main part of insulating barrier is resin or resin/reinforcing material composite material, resin kind is phenolic resins (Phenolic), epoxy resin (Epoxy), pi resin (Polyimide), polytetrafluoroethylene (Polytetra0luorethylene for example, be called for short PTFE or claim TEFLON), or bismaleimide-triazine resin (Bismaleimide Triazine is called for short BT) etc.Reinforcing material has glass fabric, glass fibre mats, insulating paper, even canvas, linen etc.
In an example of the present embodiment, above-mentioned conducting wire layer can comprise the circuit that drives described heater element.For example, conducting wire layer comprises the diode element with one or more Zener diode (zendordiode), and it is electrically connected heater element 20, so that electrostatic discharge protection to be provided.In addition, conducting wire layer can comprise power-switching circuit (electrical power conversioncircuitry), power supply regulator circuit (power regulating circuitry), voltage stabilizing circuit (voltagestabilizing circuitry), current-limiting circuit (current-limiting circuitry), rectification circuit (rectifying circuitry), other analogous circuit, and the various combinations of foregoing circuit.Various circuit can be separation or whole structure.
In another example of the present embodiment; thermoelectricity separating semiconductor device can comprise a driving element (not icon); in order to drive heater element 20; wherein driving element can be positioned at the first bearing area 10a and/or the second bearing area 10b, and the pattern of driving element can be not encapsulate crystal grain or packaging body.In the another example of the present embodiment, driving element is positioned at the opposite side of this metal cooling seat, and with respect to described resin substrate and described heater element.
Fig. 2 illustrates the thermoelectricity separating semiconductor device according to second embodiment of the invention.The present embodiment has similar element to the first embodiment, and its difference is, metal cooling seat 10 does not have boss, and the level height of the first bearing area 10a and the second bearing area 10b about equally or be positioned in same level.Material and the processing cost of the metal cooling seat of this kind of form are lower.In addition, between heater element 20 and resin substrate 30, there is white fillings 70, for example white silica gel or epoxy resin, white fillings 70 can be in order to reflection ray.Heater element 20 can comprise light emitting diode, photovoltaic cell, integrated circuit component, or other electron component etc.In an example of the present embodiment, heater element 20 is substrate displaced type light-emitting diode (Thin-GaN LED) unit, due to the displacement substrate light tight substrate of high thermal conductivity coefficient normally, and for example copper base or silicon substrate, it produces lateral light hardly.Therefore,, when substrate displaced type light emitting diode is fixed on the first bearing area 10a, do not need to worry that the resin substrate 30 that is fixed on the second bearing area 10b can stop lateral light.
Other details and the variation of the present embodiment, can be identical with the first embodiment, repeats no more.
Fig. 3 illustrates the thermoelectricity separating semiconductor device according to third embodiment of the invention.The present embodiment has similar element to the first or second embodiment, and its difference is, resin substrate 30 is single ring type structures, is arranged on the second bearing area 10b of metal cooling seat 10.On resin substrate 30, there is the conducting wire layer of electrical separation to connect respectively the electrical end points of difference of heater element 20.In an example of the present embodiment, resin substrate 30 can be rectangle.Other details and the variation of the present embodiment, can be identical with the first or second embodiment, repeats no more.
Fig. 4 A and Fig. 4 B illustrate the thermoelectricity separating semiconductor device according to fourth embodiment of the invention.The present embodiment has similar element to first, second or the 3rd embodiment, and its difference is, light emitting diode 20 comprises the light emitting diode matrix of substrate 20b altogether, and this light emitting diode matrix is electrically connected to each other by a plurality of interconnection line 20d.Dielectric material 20c fills the gap that is positioned at adjacent two light-emitting diodes partially or completely.Cobasis plate 20b can be growth substrate or displacement substrate.With the light emitting diode matrix comparison of using wire (wire) to be connected, under identical luminous intensity condition, using the advantage of cobasis plate and interconnection line is to reduce the area of light emitting diode matrix.
Above-mentioned dielectric material comprises macromolecular material, ceramic material or its combination in any.In one example, dielectric material comprises macromolecule, for example poly-polydimethyl glutarimide (polymethylglutarimide, PMGI) or SU-8.In another example, material comprises a ceramic material, for example Si oxide (silicon oxide), silicon nitride (silicon nitrides), silicon oxynitride (silicon oxynitride), aluminium oxide or other applicable pottery or oxide material, but be not limited to this.
Fig. 5 A to 5G illustrates according to the manufacture method of a kind of thermoelectricity separating semiconductor device of fifth embodiment of the invention.The manufacture method of the present embodiment can be manufactured the thermoelectricity separating semiconductor device as the first embodiment, but also can be applicable to the semiconductor device of manufacturing as second, third or the 4th embodiment.
As shown in Figure 5A, provide a metal cooling seat 10, its middle section can be used as the first bearing area 10a, and in an example of the present embodiment, the first bearing area 10a can be a boss.Preferably, the material of metal cooling seat 10, is higher, the lower-cost metal or alloy of the coefficient of heat conduction, for example aluminium.Surface treatment can be done in the surface of the first bearing area 10a, for example, with hot air leveling (Hot Air Leveling or Hot Air Solder Level), plating, electroless-plating or alternate manner, form a metal material (not shown), such as tin, gold, silver etc., on the surface of the first bearing area 10a.Wherein, hot air leveling can comprise the steps such as prerinse, preheating, scaling powder processing, scolding tin leveling and rear cleaning.
Then, as shown in Figure 5 B, can utilize screen painting (screen printing), some glue or alternate manner, be coated with a metal bond material, for example tin cream on the first 10a surface, bearing area.
Then, as shown in Figure 5 C, heater element 20 is placed on the first 10a surface, bearing area.In an example of the present embodiment, heater element 20 can be light emitting diode, and it can comprise at least one epitaxial structure and a transparent growth substrate (all not shown), and wherein said transparent growth real estate is to the first bearing area 10a.In another example of the present embodiment, the level height of the first bearing area 10a and the second bearing area 10b (is not shown in figure) about equally, heater element 20 can be substrate displaced type light-emitting diode (Thin-GaN LED) unit, displacement substrate is generally the light tight substrate of high thermal conductivity coefficient, for example copper base or silicon substrate, it is towards the first bearing area 10a.Then, as shown in Figure 5 D, can utilize a heater, for example reflow stove (reflow furnace), makes the fusing of metal bond material with cooling, thereby forms metallic bond layer 50, so that heater element 20 and the first bearing area 10a combine closely.The mode that makes the fusing of metal bond material, can include, but are not limited to, and irradiates infrared ray or blowing hot-air.
Then,, as shown in Fig. 5 E, by resin substrate 30, be placed on the second bearing area 10b.In an example of the present embodiment, in the neighboring area of heater element 20, place two resin substrates 30.In another example of the present embodiment, in the neighboring area of heater element 20, place single ring type structure resin substrate 30, on resin substrate 30, there is the conducting wire layer of electrical separation in order to connect respectively the electrical end points of difference of heater element 20.In the present embodiment, can pass through retaining element 80, for example screw, is fixed on resin substrate 30 on the second bearing area 10b.In an example of the present embodiment, retaining element 80 is penetrating metal radiating seat 10 not.In another example of the present embodiment, the penetrable metal cooling seat 10 of retaining element 80.
As shown in Fig. 5 F, in an example of the present embodiment, then, and by syndeton 60, wire (wire) for example, the electrode 20a of electrical couplings heater element 20, and a conducting wire layer (not shown) of the upper surface 30a of resin substrate 10.This conducting wire layer is at one end of resin substrate 10 30c coupling heater element 20, and this conducting wire layer is at the other end 30d of resin substrate 10, can be used as the outside point that is electrically connected.In another example of the present embodiment, the upper surface 30a of resin substrate 10 and lower surface 30b respectively have a conducting wire layer (not shown), wherein be positioned at the conducting wire layer coupling heater element 20 of upper surface 30a, and the conducting wire layer that is positioned at lower surface 30b can be used as the outside point that is electrically connected.For example, metal cooling seat 10 can have at least one through hole (not shown), and its electric connection is positioned at the conducting wire layer of lower surface 30b, and as the outside point that is electrically connected.In the present embodiment, penetrate the retaining element 80 of (or not penetrating) metal cooling seat 10, its electric connection is positioned at the conducting wire layer of upper surface 30a, or is electrically connected the conducting wire layer that is positioned at lower surface 30b, and retaining element 80 can be used as the outside point that is electrically connected.
Then,, as shown in Fig. 5 G, place a wavelength conversion protecting cover 40, to cover and to protect heater element 20 (especially for light emitting diode) and syndeton 60.The profile of wavelength conversion protecting cover 40 can be dome-type or non-sphere; Its surface, can be smooth surface, or has relief pattern, to increase light extraction efficiency.
According to the thermoelectricity separating semiconductor device of this case embodiment and its manufacture method, the heat that heater element 20 produces, can be directly conducted to metal cooling seat 10, so significantly improving heat radiation efficiency.In addition, resin substrate 10 is arranged on metal cooling seat 10, and the material of resin substrate 10 can not be subject to die bond temperature limiting, and can facilitate electrical couplings heater element 20 and external terminal.
According to this specification, those skilled in the art can do various improvement, change or replacement.Therefore, this specification is only for teaching those skilled in the art, and how illustration puts into practice the present invention, and described embodiment is only preferred embodiment.Those skilled in the art read after this specification, know which element and the material in the present embodiment can be replaced, and which element or sequence of process steps can be changed, and which feature can be alone applied.All other do not depart from equivalent modifications or the improvement completing under disclosed spirit, all should be included within the scope of claim of the present invention.

Claims (19)

1. a manufacture method for the semiconductor device of thermoelectricity separation, comprising:
One metal cooling seat is provided, and this metal cooling seat has a bearing area;
On described bearing area, fix at least one heater element;
On described metal cooling seat, fix at least one resin substrate, this resin substrate and described heater element are positioned at the same side of described metal cooling seat, have at least one conducting wire layer on described resin substrate; And
By at least one wire, be electrically connected described conducting wire layer and described heater element on described resin substrate, to form the semiconductor device of described thermoelectricity separation.
2. manufacture method as claimed in claim 1, the step of wherein fixing described at least one heater element on described bearing area comprises:
On described bearing area, place a metal bond material;
On described bearing area, place described heater element; And
By making the melting of described metal bond material cooling reflow step, form described metallic bond layer, with in conjunction with described heater element and described bearing area.
3. manufacture method as claimed in claim 2, also comprises surface treatment is carried out in described bearing area, so that engage with described metal bond material.
4. manufacture method as claimed in claim 1, wherein said resin substrate comprises two-layer conducting wire layer, this two-layer conducting wire layer lays respectively at the two opposite sides of described resin substrate, one deck conducting wire layer described heater element that is coupled wherein, described metal cooling seat has at least one through hole and connects another layer of conducting wire layer, in order to form the outside point that is electrically connected.
5. manufacture method as claimed in claim 1, wherein said heater element comprises the light emitting diode matrix of substrate altogether, described light emitting diode matrix is electrically connected to each other by a plurality of interconnection lines.
6. a semiconductor device for thermoelectricity separation, comprising:
One metal cooling seat, has one first bearing area, to fix at least one heater element;
At least one resin substrate, this resin substrate is fixed on one second bearing area of described metal cooling seat, and described resin substrate and described heater element are positioned at the same side of described metal cooling seat, on described resin substrate, there is at least one conducting wire layer, in order to heater element described in electrical couplings.
7. the semiconductor device of thermoelectricity separation as claimed in claim 6, one end of wherein said conducting wire layer described heater element that is coupled, the other end of described conducting wire layer is electrically connected a little as outside.
8. the semiconductor device of thermoelectricity separation as claimed in claim 6, wherein said resin substrate comprises two-layer conducting wire layer, this two-layer conducting wire layer lays respectively at the two opposite sides of described resin substrate, one deck conducting wire layer described heater element that is coupled wherein, and described metal cooling seat has at least one through hole and connects another layer of conducting wire layer, in order to form the outside point that is electrically connected.
9. the semiconductor device of thermoelectricity separation as claimed in claim 6, wherein said heater element comprises light emitting diode, photovoltaic cell or integrated circuit component.
10. the semiconductor device of thermoelectricity separation as claimed in claim 6 wherein has a heat radiation knitting layer between described the first bearing area and described heater element.
The semiconductor device of 11. thermoelectricity separation as claimed in claim 6, wherein said heater element is light emitting diode, described the first bearing area comprises at least one boss, described light emitting diode is fixed on described boss, described the second bearing area is used for placing described resin substrate, and the height of described resin substrate is lower than described light emitting diode, to avoid covering the lateral light of described light emitting diode.
The semiconductor device of 12. thermoelectricity separation as claimed in claim 6, wherein said heater element is a light emitting diode, the level height of described the first bearing area and described the second bearing area about equally, and described light emitting diode is substrate displaced type light-emitting diode, therefore produce hardly lateral light.
The semiconductor device of 13. thermoelectricity separation as described in claim 11 or 12, wherein said light emitting diode comprises the light emitting diode matrix of substrate altogether, described light emitting diode matrix is electrically connected to each other by a plurality of interconnection lines.
The semiconductor device of 14. thermoelectricity separation as described in claim 11 or 12, also comprises a wavelength conversion protecting cover.
The semiconductor device of 15. thermoelectricity separation as claimed in claim 12, also comprises the white fillings between described light emitting diode and described resin substrate, and this white fillings is in order to reflection ray.
The semiconductor device of 16. thermoelectricity separation as claimed in claim 6, the material of wherein said resin substrate comprises a kind of in following material: phenolic resins, epoxy resin, pi resin, polyflon or bismaleimide-triazine resin.
The semiconductor device of 17. thermoelectricity separation as claimed in claim 6, wherein said conducting wire layer comprises the circuit that drives described heater element.
The semiconductor device of 18. thermoelectricity separation as claimed in claim 6, also comprises driving at least one driving element of described heater element, and wherein this driving element is positioned at described the first bearing area and/or described the second bearing area.
The semiconductor device of 19. thermoelectricity separation as claimed in claim 6, also comprise driving at least one driving element of described heater element, wherein this driving element is positioned at the opposite side of described metal cooling seat, and relative with described heater element with described resin substrate.
CN201210322672.5A 2012-07-27 2012-09-03 Thermoelectric separated semiconductor device and method for manufacturing the same Pending CN103579480A (en)

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