JP6294670B2 - 表示装置及び表示装置の製造方法 - Google Patents

表示装置及び表示装置の製造方法 Download PDF

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Publication number
JP6294670B2
JP6294670B2 JP2014000857A JP2014000857A JP6294670B2 JP 6294670 B2 JP6294670 B2 JP 6294670B2 JP 2014000857 A JP2014000857 A JP 2014000857A JP 2014000857 A JP2014000857 A JP 2014000857A JP 6294670 B2 JP6294670 B2 JP 6294670B2
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JP
Japan
Prior art keywords
layer
resin layer
barrier layer
display device
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2014000857A
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English (en)
Japanese (ja)
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JP2015129830A5 (https=
JP2015129830A (ja
Inventor
川田　靖
靖 川田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Display Inc
Original Assignee
Japan Display Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Display Inc filed Critical Japan Display Inc
Priority to JP2014000857A priority Critical patent/JP6294670B2/ja
Priority to US14/585,603 priority patent/US9666428B2/en
Publication of JP2015129830A publication Critical patent/JP2015129830A/ja
Publication of JP2015129830A5 publication Critical patent/JP2015129830A5/ja
Application granted granted Critical
Publication of JP6294670B2 publication Critical patent/JP6294670B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/662—Laminate layers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/851—Division of substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
JP2014000857A 2014-01-07 2014-01-07 表示装置及び表示装置の製造方法 Expired - Fee Related JP6294670B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2014000857A JP6294670B2 (ja) 2014-01-07 2014-01-07 表示装置及び表示装置の製造方法
US14/585,603 US9666428B2 (en) 2014-01-07 2014-12-30 Display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014000857A JP6294670B2 (ja) 2014-01-07 2014-01-07 表示装置及び表示装置の製造方法

Publications (3)

Publication Number Publication Date
JP2015129830A JP2015129830A (ja) 2015-07-16
JP2015129830A5 JP2015129830A5 (https=) 2017-02-09
JP6294670B2 true JP6294670B2 (ja) 2018-03-14

Family

ID=53495792

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014000857A Expired - Fee Related JP6294670B2 (ja) 2014-01-07 2014-01-07 表示装置及び表示装置の製造方法

Country Status (2)

Country Link
US (1) US9666428B2 (https=)
JP (1) JP6294670B2 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6486819B2 (ja) * 2015-12-25 2019-03-20 株式会社ジャパンディスプレイ 表示装置
CN205900543U (zh) * 2016-05-18 2017-01-18 武汉华星光电技术有限公司 一种oled显示面板
JP6883275B2 (ja) * 2016-12-19 2021-06-09 大日本印刷株式会社 表示装置形成用基板、表示装置および表示装置の製造方法
US11075347B2 (en) 2018-10-22 2021-07-27 Lg Display Co., Ltd. Flexible display device
KR102030323B1 (ko) * 2018-11-23 2019-10-10 엘지디스플레이 주식회사 표시 장치 및 표시 장치의 제조 방법

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08248368A (ja) * 1995-03-09 1996-09-27 Nippon Telegr & Teleph Corp <Ntt> 液晶光学素子の製造方法と光導波路用薄型液晶光学素子および導波型光デバイス
US5760643A (en) 1995-10-31 1998-06-02 Texas Instruments Incorporated Integrated circuit die with selective pad-to-pad bypass of internal circuitry
US6046600A (en) 1995-10-31 2000-04-04 Texas Instruments Incorporated Process of testing integrated circuit dies on a wafer
US5994912A (en) 1995-10-31 1999-11-30 Texas Instruments Incorporated Fault tolerant selection of die on wafer
US6166557A (en) 1996-10-31 2000-12-26 Texas Instruments Incorporated Process of selecting dies for testing on a wafer
US6987382B1 (en) 1995-10-31 2006-01-17 Texas Instruments Incorporated System with functional and selector circuits connected by mode lead
US7362093B2 (en) 1995-10-31 2008-04-22 Texas Instruments Incorporated IC selectively connecting logic and bypass conductors between opposing pads
US5969538A (en) 1996-10-31 1999-10-19 Texas Instruments Incorporated Semiconductor wafer with interconnect between dies for testing and a process of testing
US7230447B2 (en) 2003-10-31 2007-06-12 Texas Instruments Incorporated Fault tolerant selection of die on wafer
US5712206A (en) * 1996-03-20 1998-01-27 Vanguard International Semiconductor Corporation Method of forming moisture barrier layers for integrated circuit applications
US6326801B1 (en) 1996-10-31 2001-12-04 Texas Instruments Incorporated Wafer of semiconductor material with dies, probe areas and leads
US20020024356A1 (en) 1999-10-12 2002-02-28 Whetsel Lee D. Method and apparatus for parallel die testing on wafer
JP4912835B2 (ja) * 2002-11-01 2012-04-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2004040649A1 (ja) 2002-11-01 2004-05-13 Semiconductor Energy Laboratory Co., Ltd. 半導体装置および半導体装置の作製方法
JP4218338B2 (ja) * 2002-12-24 2009-02-04 セイコーエプソン株式会社 液晶表示装置の製造方法
US7229900B2 (en) 2003-10-28 2007-06-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method of manufacturing thereof, and method of manufacturing base material
JP4974452B2 (ja) * 2003-10-28 2012-07-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2009004560A2 (en) * 2007-07-04 2009-01-08 Koninklijke Philips Electronics N.V. A method for forming a patterned layer on a substrate
US7678668B2 (en) * 2007-07-04 2010-03-16 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of SOI substrate and manufacturing method of semiconductor device
WO2009054159A1 (ja) * 2007-10-23 2009-04-30 Sharp Kabushiki Kaisha 表示装置及び表示装置の製造方法
JP2010032768A (ja) * 2008-07-29 2010-02-12 Hitachi Displays Ltd 表示装置およびその製造方法
KR101108166B1 (ko) * 2010-02-09 2012-01-31 삼성모바일디스플레이주식회사 실리콘 산화물막과 실리콘 리치 실리콘 질화물막을 포함하는 배리어층을 포함하는 유기 발광 장치
JP2013251255A (ja) * 2012-05-04 2013-12-12 Semiconductor Energy Lab Co Ltd 発光装置の作製方法
KR102462742B1 (ko) * 2013-12-02 2022-11-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 그 제조방법

Also Published As

Publication number Publication date
US20150194392A1 (en) 2015-07-09
US9666428B2 (en) 2017-05-30
JP2015129830A (ja) 2015-07-16

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