JP6289179B2 - Semiconductor light emitting device - Google Patents

Description

  The present invention relates to a semiconductor light emitting device.

  When a plurality of light emitting elements are arranged on a substrate in a light emitting device, it is necessary to regularly arrange the elements and to keep the elements from being displaced. Therefore, a concave portion having a shape that fits the bottom of the element is formed at the arrangement position where the elements are arranged on the substrate, and a physical film such as vibration is applied by forming a magnetic film at the arrangement position and the bottom of the element. Thus, there has been considered an element arrangement method capable of self-aligning elements (for example, Patent Document 1).

Japanese Patent Laid-Open No. 2003-216052

  In such an apparatus, it is necessary to provide in advance a recess that fits in the shape of the bottom of the element, and the process is complicated. In addition, since the magnetic film is formed on the arrangement position of the substrate and the bottom of the element, depending on the case, the element may be fitted obliquely, or a plurality of elements may be attracted to one recess. There was a problem that it did not necessarily fit completely.

  Accordingly, an object of the present invention is to provide a semiconductor light emitting device that can flexibly control a light emitting position and a light emitting shape and has high connection reliability between a light emitting element and a substrate.

  A semiconductor light emitting device according to the present invention includes a multilayer substrate including a mesh-like first metal layer, a mesh-like second metal layer, and an insulating base substrate provided between the first and second metal layers. A semiconductor stacked body in which a first conductive type first semiconductor layer, a light emitting layer, and a second conductive type second semiconductor layer opposite to the first conductive type are sequentially stacked, and the semiconductor stacked layer A first electrode formed at the bottom of the body and connected to the first semiconductor layer; and a second electrode protruding from the bottom surface of the semiconductor stacked body and connected to the second semiconductor layer at a tip thereof A semiconductor light emitting element comprising: a protrusion having a protrusion, and the semiconductor light emitting element is press-fitted so that the protrusion is embedded in the multilayer substrate from a surface of the first metal layer, and the protrusion Penetrates the base substrate, and the first electrode is the first electrode. Genus layer and is electrically connected to the second electrode is connected the first a metal layer and the electrically insulating and the second metal layer and electrically, it is characterized.

  The semiconductor light emitting device according to the present invention includes a first metal layer made of a plurality of mesh stripe electrodes, a second metal layer made of a plurality of mesh stripe electrodes, and the first and second metal layers. A laminated substrate comprising an insulating base substrate, a first conductive type first semiconductor layer, a light emitting layer, and a second conductive type second semiconductor opposite to the first conductive type A semiconductor stacked body in which layers are sequentially stacked; a first electrode formed at the bottom of the semiconductor stacked body; connected to the first semiconductor layer; and protruding from a bottom surface of the semiconductor stacked body; A plurality of semiconductor light emitting elements each including a protrusion having a second electrode connected to the second semiconductor layer, the plurality of stripe electrodes of the first metal layer, and the first The plurality of stripe electrodes of two metal layers Each of the plurality of semiconductor light emitting elements includes the plurality of stripe electrodes of the first metal layer and the plurality of the second metal layer. The protrusions of the plurality of semiconductor light-emitting elements are press-fitted into intersections with stripe electrodes, the first electrodes are electrically connected to the first metal layer, and the second electrodes Is electrically insulated from the first metal layer and electrically connected to the second metal layer.

  The semiconductor light emitting device according to the present invention is provided between the first metal layer in a mesh shape, the second metal layer in a mesh shape, the third metal layer in a mesh shape, and the first and second metal layers. A laminated substrate comprising an insulating first base substrate and an insulating second base substrate provided between the second and third metal layers, a first conductive type first semiconductor layer, and a light emitting layer And a semiconductor stacked body in which a second semiconductor layer of a second conductivity type opposite to the first conductivity type is sequentially stacked, and formed at the bottom of the semiconductor stack and connected to the first semiconductor layer First and second each provided with a first electrode formed and a protrusion having a second electrode protruding from the bottom surface of the semiconductor stack and connected to the second semiconductor layer at the tip. And the first and second semiconductor light emitting devices have the protrusions. Part is press-fitted so as to be embedded in the laminated substrate from the surface of the first metal layer, the protrusion of the first semiconductor light emitting element penetrates the first base substrate, and the first electrode The second metal layer is electrically connected to the first metal layer, and the second electrode is insulated from the first metal layer and electrically connected to the second metal layer. The protrusion penetrates the first base substrate and the second base substrate, the first electrode is electrically connected to the first metal layer, and the second electrode is the first base layer. The metal layer and the second metal layer are insulated and electrically connected to the third metal layer.

  The semiconductor light emitting device according to the present invention includes a mesh-like first metal layer, a mesh-like second metal layer, a mesh-like third metal layer, a mesh-like fourth metal layer, and the first And an insulating first base substrate provided between the second metal layers, an insulating second base substrate provided between the second and third metal layers, and the third and fourth metal layers And a second substrate of a second conductivity type opposite to the first conductivity type, a first conductivity type first semiconductor layer, a light emitting layer, and a laminated substrate comprising an insulating third base substrate provided on the substrate. Of the semiconductor stack, a first electrode formed on the bottom of the semiconductor stack, connected to the first semiconductor layer, and protruding from the bottom of the semiconductor stack, and its tip And a protrusion having a second electrode connected to the second semiconductor layer at each portion A first light emitting color, a second light emitting color, and a third light emitting color semiconductor light emitting element, wherein the first light emitting color, the second light emitting color, and the third light emitting color semiconductor light emitting element have the protrusions described above. The first metal layer is press-fitted so as to be embedded in the multilayer substrate, the protrusion of the first light emitting semiconductor light emitting element penetrates the first base substrate, and the first electrode The second light emitting semiconductor light emitting element is electrically connected to the first metal layer, the second electrode is insulated from the first metal layer and electrically connected to the second metal layer. And the first electrode is electrically connected to the first metal layer, and the second electrode is electrically connected to the first base substrate. Isolated from the second metal layer and electrically connected to the third metal layer. The protrusion of the third light emitting semiconductor light emitting element penetrates the first base substrate, the second base substrate, and the third base substrate, and the first electrode is the first metal layer. And the second electrode is insulated from the first metal layer, the second metal layer, and the third metal layer and electrically connected to the fourth metal layer. It is characterized by that.

It is a perspective view which shows typically the semiconductor light-emitting device concerning Example 1 of this invention. 1 is a perspective view schematically showing a part of a semiconductor light emitting device according to Example 1, and a cross-sectional view of a semiconductor light emitting element. 1 is a cross-sectional view showing a semiconductor light emitting device according to Example 1. FIG. 6 is a cross-sectional view illustrating the method for manufacturing the semiconductor light emitting element according to Example 1. FIG. 6 is a diagram illustrating a method for forming a protrusion of the semiconductor light emitting device according to Example 1. FIG. 6 is a diagram showing a method for manufacturing the semiconductor light emitting device according to Example 1. FIG. It is a perspective view which shows typically the semiconductor light-emitting device based on Example 2 of this invention. It is a perspective view which shows typically the semiconductor light-emitting device based on Example 3 of this invention. 6 is a cross-sectional view showing a semiconductor light emitting device according to Example 3. FIG. It is a perspective view which shows typically the semiconductor light-emitting device based on Example 4 of this invention. 6 is a cross-sectional view showing a structure of a semiconductor light emitting device according to Example 4. FIG. 6 is a diagram illustrating a method for driving a semiconductor light emitting device according to Example 4. FIG.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

  FIG. 1 is a perspective view schematically showing a semiconductor light emitting device 10 according to Example 1 of the present invention. The semiconductor light emitting device 10 includes a laminated substrate 15 including a cathode electrode layer 11 as a first electrode layer, an anode electrode layer 12 as a second electrode layer, a first base substrate 13 and a second base substrate 14, and a laminated substrate. 15 and a plurality of semiconductor light emitting elements 16 press-fitted into the same.

  The cathode electrode layer 11 and the anode electrode layer 12 are formed as mesh electrode layers. The cathode electrode layer 12 and the anode electrode layer 12 are formed in a mesh shape, for example, by making a hole having an opening width of about several μm in a copper foil or the like by photolithography or the like. In addition, solder plating layers are formed on the surfaces of the cathode electrode layer 12 and the anode electrode layer 12.

  The first base substrate 13 and the second base substrate 14 are formed of an insulating material. The first base substrate 13 and the second base substrate 14 have flexibility and flexibility such as PI (polyimide), PEN (polyethylene naphthalate), and PET (polyethylene terephthalate), and are greatly deformed by applying force. It is made of an insulating FPC (Flexible Printed Circuits) material.

  FIG. 2A is an enlarged perspective view showing a part of the semiconductor device 10. The semiconductor light emitting element 16 is press-fitted so as to penetrate the first base substrate 13 and reach the anode electrode layer 12 from the surface of the cathode electrode layer 11. As shown in FIG. 2A, light is emitted from the front surface of the semiconductor light emitting element 16 (arrow in the figure).

  FIG. 2B is a cross-sectional view of the semiconductor light emitting element 16. The semiconductor light emitting device 16 includes a buffer layer 18, an n-type semiconductor layer 19 which is a first conductivity type semiconductor layer, a light emitting layer 20, and a second conductivity type opposite to the first conductivity type on a light transmissive substrate 17. The semiconductor layered body 23 is formed by sequentially stacking a p-type semiconductor layer 21 and a reflective electrode 22.

  The semiconductor light emitting element 16 has a protrusion 24 protruding from the surface of the reflective electrode 22, that is, from the bottom surface of the semiconductor stacked body 23. The protrusion 24 is made of a conductive material, is configured as a conical press-fit electrode, and has a p-electrode 26 formed at the tip. The p electrode 26 is electrically connected to the p-type semiconductor layer 21 through the protrusion 24 and the reflective electrode 22.

Side of the projection 24, the portion contacting the cathode electrode layer 11 is covered with the insulating film 27. That is, the protrusion 24 is insulated from the cathode electrode layer 11.

  The outer peripheral portions of the light emitting layer 20, the p-type semiconductor layer 21, and the reflective electrode 22 of the semiconductor stacked body 23 are etched into a cylindrical shape so that the n-type semiconductor layer 19 is exposed. An n-electrode 25 is formed along the outer periphery of a cylinder composed of the light-emitting layer 20, the p-type semiconductor layer 21, and the reflective electrode 22 in the exposed portion of the n-type semiconductor layer 19 at the bottom of the semiconductor stacked body 23. Yes. The n electrode 25 is electrically connected to the n-type semiconductor layer 19.

  FIG. 3 is a cross-sectional view showing a connection state between the semiconductor light emitting element 16 and the multilayer substrate 15. The semiconductor light emitting element 16 is press-fitted so that the protrusion 24 is embedded in the multilayer substrate 15 from the surface of the cathode electrode layer 11. The protrusion 24 penetrates the first base substrate 13.

  The n electrode 25 is in contact with and electrically connected to the cathode electrode layer 11. The p electrode 26 is in contact with and electrically connected to the anode electrode layer 12.

  Next, a method for manufacturing the semiconductor light emitting element 16 will be described with reference to FIGS. As shown in FIG. 4A, a buffer layer 18 is formed on a light transmissive substrate 17 made of, for example, a sapphire substrate. The buffer layer 18 is made of, for example, GaN or the like, and reduces lattice mismatch between the light transmissive substrate 17 and the p-type semiconductor layer 21. An n-type semiconductor layer 19, a light emitting layer 20, and a p-type semiconductor layer 21 are sequentially grown on the buffer layer 18. A reflective electrode 22 is formed on the p-type semiconductor layer.

  The n-type semiconductor layer 19, the light emitting layer 20, and the p-type semiconductor layer 21 are made of, for example, a GaN-based semiconductor. The reflective electrode 22 is composed of, for example, an Al layer or an Ag layer.

  As shown in FIG. 4B, the light emitting layer 20, the p-type semiconductor layer 21, and the reflective electrode 22 are etched into a cylindrical shape having a diameter of, for example, several tens of micrometers so that the n-type semiconductor layer 19 is exposed.

  As shown in FIG. 4C, an n-electrode 25 is formed on the surface of the n-type semiconductor layer 19 exposed by etching along the outer periphery of a cylinder composed of the light-emitting layer 20, the p-type semiconductor layer 21, and the reflective electrode 22. To do.

  As shown in FIG. 4D, a conductive protrusion 24 protruding from the surface of the reflective electrode 22 is formed. The protrusion 24 is formed in a conical shape by, for example, stacking electroforming plating a plurality of times while gradually reducing the size of the resist pattern frame.

As shown in FIG. 4E, a p-electrode 26 is formed at the tip of the protrusion 24. In addition, an insulating film 27 is formed from the side surface of the cylinder formed of the light emitting layer 20, the p-type semiconductor layer 21, and the reflective electrode 22 to the side surface of the protrusion 24 including the portion in contact with the cathode electrode layer 11.

  After the growth step shown in FIG. 4A, the steps shown in FIG. 4B to FIG. 4E are performed to form a plurality of semiconductor light emitting elements 16 on the light transmissive substrate 17.

  An adhesive sheet is affixed on the surface of the light-transmitting substrate 17 opposite to the growth surface of each layer (18-22). A plurality of semiconductor light emitting elements 16 are individually separated by, for example, a size of about 50 μm square by blade dicing or laser scribing. The semiconductor light emitting element 16 is manufactured through the above steps.

  5A to 5D are diagrams showing four cases of the method for forming the protrusion 24. FIG. For example, as shown in FIG. 5A, the conical protrusion 24 can be formed by stacking electroforming plating a plurality of times while gradually reducing the size of the resist pattern frame.

  Further, as shown in FIG. 5B, for example, the protrusion 24 may be formed by gradually reducing the diameter of a gold wire used for a gold bump and stacking gold by repeating ultrasonic bonding. . Specifically, a plurality of gold wires having different diameters are prepared, each is mounted on a wire bonder device (not shown), and bumps are stacked in descending order of diameter. According to this method, since the bump diameter and the bump height can be controlled by changing the load and ultrasonic intensity of the wire bonder device, it is possible to form the protrusion 24 having a sharp tip on the horn. it can.

  Moreover, as shown in FIG.5 (c), you may form the projection part 24 by joining the metal previously processed into the shape of a cone using a joining material. The metal conical processing can be performed by, for example, molding and dividing a metal plate with a mold, or performing MEMS (Micro Electro Mechanical Systems) processing by silicon anisotropic etching.

  Alternatively, the protrusion 24 may be formed by forming a low melting point metal material such as a solder material based on tin on the reflective electrode 22 by a method such as laser welding or plating bath dipping. At that time, by pulling up the apex of the molten liquid state while contacting the seed material or the tip of the needle, the surface tension works and it becomes possible to obtain a substantially conical shape as shown in FIG. By lowering the temperature below the melting point in this state, the conical protrusion 24 having a sharp tip can be formed.

  Next, a method for manufacturing the semiconductor light emitting device 10 according to the present invention will be described with reference to FIG. First, one of the plurality of semiconductor light emitting elements 16 is picked up using a chip mounter having two heads. Specifically, using the vacuum suction mechanism of the first head 28 out of the two heads, the semiconductor light emitting element 16 is sucked and held from the bottom surface side, that is, from the formation side of the protruding portion 24 (step ( i)).

  Next, the first head 28 is rotated 180 degrees and held so that the front surface side of the semiconductor light emitting element 16, that is, the adhesive sheet bonding surface side of the light transmissive substrate 17, faces the semiconductor light emitting device with the second head 29. The adhesive sheet adhesive surface of the element 16 is adsorbed (step (ii) in the figure). The first head 28 is removed from the semiconductor light emitting element 16, and the semiconductor light emitting element 16 is held by the second head 29 so that the protrusion 24 faces downward (step (iii) in the figure). The semiconductor light emitting element 16 is pressed into the laminated substrate 15 from a predetermined position on the surface of the cathode electrode layer 11 while applying a load and pushing the second head 29 (step (iv) in the figure).

  The steps (i) to (iv) are repeated for the plurality of semiconductor light emitting elements 16. As a result, the n electrodes 25 of the plurality of semiconductor light emitting elements 16 are in contact with the cathode electrode layer 11 and the p electrode 26 is in contact with the anode electrode layer 12 to be electrically connected.

  Thereafter, reflow heating is performed on the entire substrate. The solder plating layer formed on the surface of the metal mesh electrode is melted, and the n electrode 25 is joined to the cathode electrode layer 11 and the p electrode 26 is joined to the anode electrode layer 12. The semiconductor light emitting device 10 is manufactured through the above steps.

  As described above, the mesh interval (opening width) between the cathode electrode layer 11 and the anode electrode layer 12 is about several μm, which is sufficiently smaller than the external size of the p-electrode 26 of the semiconductor light emitting element 16. Therefore, a plurality of electrical contacts are ensured between the p electrode 26 and the anode electrode layer 12 in a state where the semiconductor light emitting element 16 is press-fitted into the laminated substrate 15.

  In addition, since the first base substrate 13 and the second base substrate 14 are made of flexible and highly flexible FPC material, the semiconductor light emitting element 16 was pressed into the shape of the semiconductor light emitting element 16. It transforms into a shape. For this reason, the semiconductor light emitting element 16 can be easily mounted at a desired position, and the reliability of electrical connection is high.

Further, an insulating film 27 is formed on the side surface of the protrusion 24 to insulate between the cathode electrode layer 11 and the protrusion 24 . Therefore, even when the protrusion 24 is press-fitted into the first base substrate 13, the insulation state between the cathode electrode layer 11 and the anode electrode layer 12 is maintained, and occurrence of a short circuit between layers is prevented.

  Further, since the semiconductor light emitting element 16 is press-fitted into the laminated substrate 15 from a desired position on the surface of the cathode electrode layer 11 to mount the element, it is not necessary to previously form an electrode pad on the substrate, and the desired light emission is achieved. It is possible to easily arrange elements at positions.

  In addition, since the cathode electrode layer 11 and the anode electrode layer 12 are formed in a mesh shape, the probability of causing a disconnection failure is low as compared with wiring using a single line pattern. Further, the wiring resistance is greatly reduced as compared with the case where a transparent electrode such as ITO (Indium Tin Oxide) is used.

  Further, by joining the n electrode 25 and the cathode electrode layer 11 and the p electrode 26 and the anode electrode layer 12 of the semiconductor light emitting element 16 by the reflow process, the reliability of electrical connection can be further increased. The element can be easily conducted.

  Further, the mesh-shaped metal electrode layer having high thermal conductivity is configured to be in direct contact with the n electrode 25 and the p electrode 26 of the semiconductor light emitting element 16. For this reason, a heat radiation path is secured in the surface direction via the two layers of the cathode electrode layer 11 and the anode electrode layer 12.

  FIG. 7 is a perspective view schematically illustrating the semiconductor light emitting device 30 according to the second embodiment. The semiconductor light emitting device 30 includes a laminated substrate 35 including a cathode electrode layer 31 as a first electrode layer, an anode electrode layer 32 as a second electrode layer, a first base substrate 33 and a second base substrate 34, and a laminated substrate. And a plurality of semiconductor light emitting elements 36 press-fitted into 35.

  The cathode electrode layer 31 is composed of a plurality of strip electrodes 31 (1), 31 (2)... 31 (j). The strip electrodes 31 (1) to 31 (m) are arranged on the first base substrate 33 in parallel to each other, and form a stripe shape.

  The anode electrode layer 32 is composed of a plurality of strip electrodes 32 (1), 32 (2)... 32 (k). The strip electrodes 32 (1) to 32 (n) are arranged on the second base substrate 34 in parallel with each other, and form a stripe shape.

  The strip electrodes 31 (1) to 31 (m) of the cathode electrode layer 31 and the strip electrodes 32 (1) to 32 (n) of the anode electrode layer 32 extend in directions different from each other by about 90 degrees, and the first base substrate Crossing three-dimensionally across 23. The strip electrodes 31 (1) to 31 (m) of the cathode electrode layer 31 and the strip electrodes 32 (1) to 32 (n) of the anode electrode layer 32 are insulated by the insulating first base substrate 33. .

  In the semiconductor light emitting device 36, the strip electrodes 31 (1) to 31 (m) of the cathode electrode layer 31 and the strip electrodes 32 (1) to 32 (n) of the anode electrode layer 32 sandwich the first base substrate 33. It is press-fitted at the crossing position that intersects three-dimensionally. That is, the semiconductor light emitting element 36 (j, k) is press-fitted at the intersection where the strip electrode 31 (j) and the strip electrode 32 (k) intersect three-dimensionally with the first base substrate 33 interposed therebetween ( j = 1, 2,..., m, k = 1, 2,.

  The n-electrode 25 of the semiconductor light emitting device 36 (j, k) is in contact with and electrically connected to the strip electrode 31 (j) of the cathode electrode layer 31. The p-electrode 26 of the semiconductor light emitting device 36 (j, k) is in contact with and electrically connected to the strip electrode 32 (k) of the anode electrode layer 32.

  The strip electrodes 31 (1) to 31 (m) of the cathode electrode layer 31 are connected to different drivers. The strip electrodes 32 (1) to 32 (n) of the anode electrode layer 32 are connected to different drivers.

  By driving the semiconductor light emitting device 30 having the above configuration, dot matrix display can be performed. Specifically, any one of the drivers connected to the strip electrodes 31 (1) to 31 (m) of the cathode electrode layer 31 is selected and driven, and the strip electrodes 32 (1) to 32 of the anode electrode layer 32 are driven. One of the drivers connected to (n) is selected and driven. Thereby, the semiconductor light emitting element 36 press-fitted at the intersection of the strip electrodes corresponding to the selected driver emits light. That is, the semiconductor light emitting element 36 (j, k) emits light by turning on the driver connected to the strip electrode 31 (j) and the driver connected to the strip electrode 32 (k).

  As described above, according to the semiconductor light emitting device 30 according to the second embodiment of the present invention, display such as dot matrix display can be performed by selectively causing the plurality of semiconductor light emitting elements 36 to emit light. In addition, the present invention can be applied to semiconductor light emitting devices such as various display devices and lighting devices.

  FIG. 8 is a perspective view of the semiconductor light emitting device 40 according to the third embodiment. The semiconductor light emitting device 40 includes a laminated substrate 47 including a first electrode layer 41, a second electrode layer 42, a third electrode layer 43, a first base substrate 44, a second base substrate 45, and a third base substrate 46. The first semiconductor light emitting element 48 and the second semiconductor light emitting element 49 press-fitted into the laminated substrate 47 are configured.

  The first electrode layer 41 is formed as a mesh electrode layer over the entire surface of the first base substrate 44. The second electrode layer 42 is formed as a mesh electrode layer over the entire surface of the second base substrate 45. The third electrode layer 43 is formed as a mesh electrode layer over the entire surface of the third base substrate 46.

  The first semiconductor light emitting device 48 and the second semiconductor light emitting device 49 have protrusions 24 having different heights. The protrusion 24 of the first semiconductor light emitting device 48 is formed at a height that reaches the second electrode layer 42 in a state where the first semiconductor light emitting device 48 is press-fitted into the laminated substrate 47. The protrusion 24 of the second semiconductor light emitting element 49 is formed at a height that reaches the third electrode layer 43 in a state where the second semiconductor light emitting element 49 is press-fitted into the laminated substrate 47.

  FIG. 9 is a cross-sectional view showing a connection state between the first semiconductor light emitting device 48 and the second semiconductor light emitting device 49 and the laminated substrate 47. The first semiconductor light emitting element 48 and the second semiconductor light emitting element 49 are press-fitted so that the protrusions 24 are embedded in the laminated substrate 47 from the surface of the first electrode layer 41.

  The protrusion 24 of the first semiconductor light emitting element 48 passes through the first base substrate 44. The n electrode 25 of the first semiconductor light emitting device 48 is in contact with and electrically connected to the first electrode layer 41, and the p electrode 26 is in contact with and electrically connected to the second electrode layer 42. Yes.

  The protrusion 24 of the second semiconductor light emitting element 49 passes through the first base substrate 44 and the second base substrate 45. The n electrode 25 of the second semiconductor light emitting element 49 is in contact with and electrically connected to the first electrode layer 41, and the p electrode 26 is in contact with and electrically connected to the third electrode layer 43. Yes.

  In the semiconductor light emitting device 40 having the above configuration, it is selectively between the first electrode layer 41 and the second electrode layer 42 or between the first electrode layer 41 and the third electrode layer 43. By applying a voltage to the first semiconductor light emitting element 48 or the second semiconductor light emitting element 49, light can be selectively emitted.

  As described above, according to the semiconductor light emitting device 30 according to the second embodiment of the present invention, light emitting elements having protrusions having different heights can be easily press-fitted into the base substrate. The first semiconductor light emitting device 48 or the second semiconductor light emitting device 49 can be selectively controlled in accordance with the light emission. Further, the emission color and emission luminance of the first semiconductor light emitting device 48 and the second semiconductor light emitting device 49 may be different. Light emitting elements having different emission colors and emission luminances can selectively emit light, and can be applied to semiconductor light emitting devices such as various display devices and lighting devices.

  FIG. 10 is a perspective view schematically illustrating the semiconductor light emitting device 50 according to the fourth embodiment. The semiconductor light emitting device 50 includes a first electrode layer 51, a second electrode layer 52, a third electrode layer 53, a fourth electrode layer 54, a first base substrate 55, a second base substrate 56, and a third base substrate. A laminated substrate 59 composed of 57 and a fourth base substrate 58; an R light emitting element 60 that emits red light (first emission color) press-fitted into the laminated substrate 59; and a G light emitting element that emits green light (second emission color). 61 and a B light emitting element 62 that emits blue light (third emission color).

  The first electrode layer 51 is composed of a plurality of strip electrodes 51 (1), 51 (2)... 51 (j). The strip electrodes 51 (1) to 51 (m) are arranged on the first base substrate 55 in parallel with each other, and form a stripe shape.

  The second electrode layer 52 is composed of a plurality of strip electrodes 52 (1), 52 (2)... 52 (k)... 52 (n) formed in a mesh shape. The strip electrodes 52 (1) to 52 (n) are arranged on the second base substrate 56 in parallel with each other, and form a stripe shape. The strip electrodes 52 (1) to 52 (n) extend in a direction different from the strip electrodes 51 (1) to 51 (m) of the first electrode layer 51 by about 90 degrees, and are three-dimensional with the first base substrate 55 interposed therebetween. Intersects.

  The third electrode layer 53 includes a plurality of strip electrodes 53 (1), 53 (2)... 53 (k). The strip electrodes 53 (1) to 53 (n) are arranged on the third base substrate 57 in parallel to each other, and form a stripe shape. The fourth electrode layer 54 is composed of a plurality of strip electrodes 54 (1), 54 (2)... 54 (k). The strip electrodes 54 (1) to 54 (n) are arranged on the fourth base substrate 58 in parallel with each other, and form a stripe shape.

  The strip electrodes 53 (1) to 53 (n) of the third electrode layer 53 and the strip electrodes 54 (1) to 54 (n) of the fourth electrode layer 54 are all the strip electrodes of the second electrode layer 52. 52 (1) to 52 (n) and the base substrate (the second base substrate 56, the third base substrate 57) are sandwiched in the same direction and in a three-dimensional overlap, that is, when viewed from a direction perpendicular to the base substrate. And three-dimensionally intersect with the strip electrodes 51 (1) to 51 (m) of the first electrode layer 51.

  A plurality of strip electrodes 51 (1) to 51 (m) of the first electrode layer 51, a plurality of strip electrodes 52 (1) to 52 (n) of the second electrode layer 52, and a plurality of strips of the third electrode layer 53 At each crossing position at which the strip electrodes 53 (1) to 53 (n) and the strip electrodes 54 (1) to 54 (n) of the fourth electrode layer 54 intersect three-dimensionally with the base substrates 55 to 57 interposed therebetween, The R light emitting element 60, the G light emitting element 61, and the B light emitting element 62 are press-fitted as a set.

  FIG. 11 is an enlarged cross-sectional view showing a part of the semiconductor light emitting device 50. The R light emitting device 60 includes a semiconductor laminate 69 in which a buffer layer 64, an n-type semiconductor layer 65, a light emitting layer 66, a p-type semiconductor layer 67, and a reflective electrode 68 are sequentially laminated on a light transmissive substrate 63, and a protrusion 70. An n-electrode 71, a p-electrode 72, and an insulating film 73. The protrusion 70 is formed at a height at which the tip reaches the second electrode layer 52 in a state where the R light emitting element 60 is press-fitted into the laminated substrate 59.

  The light transmissive substrate 63 of the R light emitting element 60 is made of, for example, GaP. The n-type semiconductor layer 65, the light emitting layer 66, and the p-type semiconductor layer 67 are made of, for example, a GaP-based semiconductor. The buffer layer 64 is composed of a current diffusion layer such as AlInGaP. The reflective electrode 68 is composed of, for example, an Al layer or an Ag layer.

  The G light-emitting element 61 and the B light-emitting element 62 have the same structure as that of the R light-emitting element 60, and are different from the R light-emitting element 60 in the material constituting the semiconductor stacked body 69 and the shape of the protrusions 70.

  The light transmissive substrates 74 and 85 of the G light emitting element 61 and the B light emitting element 62 are made of, for example, a sapphire substrate. The buffer layers 75 and 86 are made of GaN or the like, for example. The n-type semiconductor layers 76 and 87 and the p-type semiconductor layers 78 and 89 are made of, for example, AlGaN. The light emitting layers 77 and 88 are made of, for example, InGaN. The reflective electrodes 79 and 90 are composed of, for example, an Al layer or an Ag layer.

  The protruding portion 81 of the G light emitting element 61 is formed at a height at which the tip reaches the third electrode layer 53 in a state where the G light emitting element 61 is press-fitted into the laminated substrate 59. The protruding portion 92 of the B light emitting element 62 is formed at a height at which the tip reaches the fourth electrode layer 54 in a state where the B light emitting element 62 is press-fitted into the laminated substrate 59.

  The R light emitting element 60, the G light emitting element 61, and the B light emitting element 62 are press-fitted so that the protrusions 70, 81, and 92 are embedded in the multilayer substrate 59 from the surface of the first electrode layer 51.

  The protrusion 70 of the R light emitting element 60 penetrates the first base substrate 55. The n-electrode 71 of the R light emitting element 60 is in contact with and electrically connected to the first electrode layer 51, and the p-electrode 72 is in contact with and electrically connected to the second electrode layer 52.

  The protrusion 81 of the G light emitting element 61 passes through the first base substrate 55 and the second base substrate 56. The n-electrode 82 of the G light-emitting element 61 is in contact with and electrically connected to the first electrode layer 51, and the p-electrode 83 is in contact with and electrically connected to the third electrode layer 53.

  The protrusion 92 of the B light emitting element 62 passes through the first base substrate 55, the second base substrate 56, and the third base substrate 57. The n-electrode 93 of the B light-emitting element 62 is in contact with and electrically connected to the first electrode layer 51, and the p-electrode 94 is in contact with and electrically connected to the fourth electrode layer 54.

  A set of R light-emitting element 60, G light-emitting element 61, and B light-emitting element 62 includes strip-shaped electrodes 51 (1) to 51 (m) of the first electrode layer 51, second electrode layer 52, and third electrode. The layer 53 and the belt-like electrode of the fourth electrode layer 54 are press-fitted into the same intersecting position where the base substrates 55 to 57 are three-dimensionally crossed to form one dot.

  In the semiconductor device 50 configured as described above, matrix driving is performed using the first electrode layer 51 as a common line and the second electrode layer 52, the third electrode layer 53, and the fourth electrode layer 54 as data lines. Do. Hereinafter, a method for driving the semiconductor light emitting device 50 will be described with reference to FIG.

  The common lines CL1 to CLm correspond to the strip electrodes 51 (1) to 51 (m) of the first electrode layer 51. The data lines DL1 to DLn are composed of R1 to Rn, G1 to Gn, and B1 to Bn. R1 to Rn correspond to the strip electrodes 52 (1) to 52 (n) of the second electrode layer 52. G1 to Gn correspond to the strip electrodes 53 (1) to 53 (n) of the third electrode layer 53. B1 to Bn correspond to the strip electrodes 54 (1) to 54 (n) of the fourth electrode layer 54.

  The drivers connected to the common lines CL1 to CLm are sequentially turned on. While the common line CL1 is on, a signal of any one of the three colors to be displayed on each of the data lines DL1 to DLn, or a combination of two of the three colors and a combination of all three colors is input. . For example, to display R at the intersection of CL1 and DL1, a driver connected to the first strip electrode 51 (1) corresponding to CL1 and a second electrode corresponding to the data line DL1 (R1) The driver connected to the strip electrode 52 (1) of the layer 52 is turned on. Thereby, the R light emitting element 60 (1, 1) emits light, and a red color is displayed on a dot at a position corresponding to the intersection of CL1 and DL1 (R1).

  Next, the same operation is performed for the common line CL2, and when the scanning is performed up to the common line CLn, the driving operation for returning to the common line CL1 is repeatedly performed. Through the above operation, full-color display using the three primary colors R, G, and B can be performed.

  In the semiconductor device 50 according to Example 4, the second electrode layer 52, the third electrode layer 53, and the fourth electrode layer 54 that serve as anode electrode layers of the R light emitting element 60, the G light emitting element 61, and the B light emitting element 62 are provided. The base plate 55 is electrically separated from the base substrate 55 in the stacking direction of the stacked substrate 59. And each electrode layer 52-54 is formed so that it may overlap on both sides of the base substrate 55-57 so that it may cross | intersect three-dimensionally on both sides of the 1st electrode layer 51 in the same position, respectively. Therefore, the intersection positions of the first electrode layer 51 and the second to fourth electrode layers 52 to 54 are the same, and the R light emitting element 60, the G light emitting element 61, and the B light emitting element 62 are provided at the same intersection position. Since it can be mounted, it is possible to perform fine-color full-color display.

  Next, a method for manufacturing the semiconductor light emitting device 50 according to Example 4 will be described. First, a plurality of alignment marks serving as marks for mounting positions of the semiconductor light emitting elements are formed on the outer peripheral portion of the surface of the multilayer substrate 59.

  Next, a plurality of R light-emitting elements 60 formed on the light-transmitting substrate 63 and separated into pieces are picked up by a chip mounter, and press-fitted into the laminated substrate 59 to be mounted. Similar pick-up and press-fitting operations are repeated for a plurality of R light emitting elements 60 having the same shape. Thereafter, it is determined whether or not there is no displacement in the mounting position of the element by image recognition using a camera. When a positional deviation is detected, the mounting position is corrected.

  Subsequently, the same operation as described above is repeated for the G light-emitting element 61. The same operation is repeated for the B light emitting element 62. Thereby, the n electrodes 71, 82, and 93 of the R light emitting element 60, the G light emitting element 61, and the B light emitting element 62 are in contact with the first electrode layer 51, and the p electrode 72 of the R light emitting element 60 is in the second state. The electrode layer 52, the p-electrode 83 of the G light-emitting element 61 are in contact with the third electrode layer 53, and the p-electrode 94 of the B light-emitting element 62 are in contact with the fourth electrode layer 54, respectively.

  Thereafter, by performing reflow heating on the entire substrate, the solder plating layer formed on the surface of the mesh-shaped metal electrode is melted, and the n-electrodes 71, 82 and 93 and the p-electrodes 72, 83 and 94 of each semiconductor light-emitting element are It joins with each electrode layer which is in contact.

  As described above, in the method for manufacturing the semiconductor light emitting device 50 according to the present embodiment, after mounting all the elements having the same light emission color and the same shape, mounting is performed on the elements of other colors. For this reason, compared with the case where R, G, and B light emitting elements are alternately mounted (for example, when RGB that forms one dot is mounted and then RGB that forms adjacent dots is mounted), it is based on image recognition. The time required to detect misalignment can be shortened, and the overall work time can be shortened.

  Further, by forming a plurality of alignment marks on the outer peripheral portion of the laminated substrate 59, it becomes easy to grasp the relative position information of each element. Therefore, by controlling the relative coordinates of these marks and the mounting positions of the semiconductor light emitting elements by device programming, the semiconductor light emitting elements of the respective emission colors can be driven into arbitrary positions.

  In the semiconductor device 50 according to Example 4, the second electrode layer 52, the third electrode layer 53, and the fourth electrode layer 54 that serve as anode electrode layers of the R light emitting element 60, the G light emitting element 61, and the B light emitting element 62 are provided. The base plate 55 is electrically separated from the base substrate 55 in the stacking direction of the stacked substrate 59. And each electrode layer 52-54 is formed so that it may overlap on both sides of the base substrate 55-57 so that it may cross | intersect three-dimensionally on both sides of the 1st electrode layer 51 in the same position, respectively. Therefore, the intersection positions of the first electrode layer 51 and the second to fourth electrode layers 52 to 54 are the same, and the R light emitting element 60, the G light emitting element 61, and the B light emitting element 62 are provided at the same intersection position. Since it can be mounted, it is possible to perform fine-color full-color display.

  As described above, in the semiconductor light emitting device according to the present invention, the semiconductor light emitting element having the conical protrusions is press-fitted into the laminated substrate having a plurality of mesh electrode layers. For this reason, it is not necessary to previously form an electrode pad on the substrate, and it is not necessary to design a circuit pattern in advance, so that the element can be easily arranged at a desired light emitting position.

  The embodiment of the present invention is not limited to the above. For example, using FPC technology, it is complicated using a build-up method in which holes (through holes) are drilled in the vertical direction and multiple layers (layers) are connected by plating, and the multilayer board is modularized or the multi-layer is developed. It is also possible to form a solid circuit. In addition, by combining these technologies, a light source design that can follow curved surfaces and three-dimensional structures can be achieved.

  In the above embodiment, the semiconductor light emitting elements have the same size in the same plane of the substrate. However, the present invention is not limited to this, and elements having different element sizes and driving currents may be mixed. The series driving of elements having different sizes is not preferable because the current load to the elements having a small size increases due to the difference in individual current densities. However, according to the structure of the present invention, the parallel connection with the metal mesh electrode on the uppermost layer of the substrate in common is fundamental, the current density flowing through each element is constant, and the current is distributed. In the case of parallel connection of elements of different sizes, driving is possible.

  Further, in the above-described embodiment, the case where the semiconductor light emitting element is arranged at a portion corresponding to the intersection of the plurality of line-shaped mesh electrode layers orthogonal to each other with the base substrate interposed therebetween has been described. However, the present invention is not limited to this, and for example, a plurality of semiconductor light emitting elements can be arranged discretely in an island shape or arranged with a wide arrangement density. By arranging in this way, a more flexible light emission design that does not depend on the circuit pattern, such as gradation display in which the light emission density continuously changes and moving image display by sequential driving for each area, is possible.

  In the above embodiment, each mesh electrode layer is formed by patterning a copper foil into a mesh shape by photolithography. However, the present invention is not limited to this. It may be formed in the pattern. Further, it may be formed by an electroless plating method using a Pd catalyst.

  In the above embodiment, the solder plating layer is formed on the surface of the mesh electrode layer. However, the present invention is not limited to this. For example, the solder plating layer may be formed on the surface of the p-electrode and the surface of the n-electrode. By forming a bonding material such as solder on the semiconductor light emitting element side, reflow heating can be performed a plurality of times for each semiconductor light emitting element having different heat resistance. In addition, by combining the bonding materials having different melting points, the semiconductor light emitting element that is weak against the heat history can be formed on the same substrate by performing the reflow heating in order from the semiconductor light emitting element that is strong against the heat history.

  Moreover, although the said Example demonstrated the case where the shape of a projection part was a cone shape, it is not restricted to this, For example, a pyramid shape, a column shape, a prism shape, etc. may be sufficient. In short, it is only necessary that the semiconductor light emitting element has a protrusion having a shape that can be press-fitted into the laminated substrate.

  Moreover, although the said Example demonstrated the case where the flexible and flexible FPC material was used as a base substrate, the material of a base substrate is not restricted to this. The semiconductor light-emitting element having the protruding portion may be press-fitted and may be made of a material capable of maintaining the state.

  In the above-described embodiment, the case where color display is performed using light emitting elements of three colors R, G, and B as the first to third light emission colors has been described. By forming a semiconductor light emitting device using a light emitting element, various modes of color display can be performed.

  In the above embodiment, the case where the first conductivity type is n-type and the second conductivity type is p-type which is opposite to the first conductivity type (n-type) has been described. However, the present invention is not limited to this. Absent. The first conductivity type may be p-type and the second conductivity type may be n-type. Note that the first conductivity type semiconductor layer or the second conductivity type semiconductor layer may include an intrinsic semiconductor layer (i layer).

10, 30, 40, 50 Semiconductor light emitting device 11, 31 Cathode electrode layer 12, 32 Anode electrode layer 13, 14, 33, 34 Base substrate 15, 35, 47 Laminated substrate 16, 36, 48, 49 Semiconductor light emitting device 17, 63, 74, 85 Light transmissive substrate 18, 64, 75, 86 Buffer layer 19, 65, 76, 87 N-type semiconductor layer 20, 66, 77, 88 Light-emitting layer 21, 67, 78, 89 P-type semiconductor layer 22 , 68, 79, 90 Reflective electrode 23, 69, 80, 91 Semiconductor stack 24, 70, 81, 92 Protrusion 25, 71, 82, 93 n-electrode 26, 72, 83, 94 p-electrode 27, 73, 84 95 Insulating film 28 1st head 29 2nd head 41-43, 51-54 Electrode layer 44-46, 55-58 Base substrate 60 R light emitting element 61 G light emitting element 6 2 B light emitting device

Claims (8)

A laminated substrate comprising a mesh-like first metal layer, a mesh-like second metal layer, and an insulating base substrate provided between the first and second metal layers;
A semiconductor stacked body in which a first conductive type first semiconductor layer, a light emitting layer, and a second conductive type second semiconductor layer opposite to the first conductive type are sequentially stacked; and the semiconductor stacked body A first electrode connected to the first semiconductor layer, a second electrode protruding from the bottom surface of the semiconductor stack, and connected to the second semiconductor layer at the tip of the first electrode. A semiconductor light emitting device comprising a protrusion having,
The semiconductor light emitting device is press-fitted so that the protrusion is embedded in the multilayer substrate from the surface of the first metal layer,
The protrusion penetrates the base substrate, the first electrode is electrically connected to the first metal layer, the second electrode is electrically insulated from the first metal layer, and the second Electrically connected with the metal layer of the
A semiconductor light-emitting device. The protrusion is made of a conductive material, a semiconductor light emitting device according to claim 1 in which the portion in contact with said first metal layer side and being covered with an insulating film.   The semiconductor light emitting device according to claim 2, wherein the protrusion is made of a metal formed in a conical shape.   4. The semiconductor light emitting device according to claim 1, wherein the first metal layer, the second metal layer, and the semiconductor light emitting element are joined by a reflow process. 5.   The semiconductor light-emitting device according to claim 1, wherein the base substrate is made of a flexible material. A first metal layer comprising a plurality of mesh stripe electrodes, a second metal layer comprising a plurality of mesh stripe electrodes, and an insulating base substrate provided between the first and second metal layers. A laminated substrate;
A semiconductor stacked body in which a first conductive type first semiconductor layer, a light emitting layer, and a second conductive type second semiconductor layer opposite to the first conductive type are sequentially stacked; and the semiconductor stacked body A first electrode connected to the first semiconductor layer, a second electrode protruding from the bottom surface of the semiconductor stack, and connected to the second semiconductor layer at the tip of the first electrode. A plurality of semiconductor light emitting elements each having a protrusion having
The plurality of stripe electrodes of the first metal layer and the plurality of stripe electrodes of the second metal layer are arranged so as to intersect spatially across the base substrate,
Each of the plurality of semiconductor light emitting elements is press-fitted into an intersection position of the plurality of stripe electrodes of the first metal layer and the plurality of stripe electrodes of the second metal layer,
The protrusions of the plurality of semiconductor light emitting elements penetrate the base substrate, the first electrode is electrically connected to the first metal layer, and the second electrode is electrically connected to the first metal layer. And electrically connected to the second metal layer,
A semiconductor light-emitting device. A mesh-like first metal layer; a mesh-like second metal layer; a mesh-like third metal layer; an insulating first base substrate provided between the first and second metal layers; A laminated substrate comprising an insulating second base substrate provided between the second and third metal layers;
A semiconductor stacked body in which a first semiconductor layer of a first conductivity type, a light emitting layer, and a second semiconductor layer of a second conductivity type opposite to the first conductivity type are sequentially stacked; A first electrode formed on the bottom and connected to the first semiconductor layer; and a second electrode protruding from a bottom surface of the semiconductor stacked body and connected to the second semiconductor layer at a tip of the first electrode. A first and a second semiconductor light emitting element each including a protrusion, and
The first and second semiconductor light emitting elements are press-fitted so that the protrusions are embedded in the multilayer substrate from the surface of the first metal layer,
The protrusion of the first semiconductor light emitting element penetrates the first base substrate, the first electrode is electrically connected to the first metal layer, and the second electrode is the first electrode. And electrically connected to the second metal layer,
The protrusion of the second semiconductor light emitting element penetrates the first base substrate and the second base substrate, the first electrode is electrically connected to the first metal layer, and Two electrodes are insulated from the first metal layer and the second metal layer and electrically connected to the third metal layer;
A semiconductor light-emitting device. Mesh-like first metal layer, mesh-like second metal layer, mesh-like third metal layer, mesh-like fourth metal layer, insulation provided between the first and second metal layers First base substrate, insulating second base substrate provided between the second and third metal layers, and insulating third base provided between the third and fourth metal layers A laminated substrate comprising a substrate;
A semiconductor stacked body in which a first semiconductor layer of a first conductivity type, a light emitting layer, and a second semiconductor layer of a second conductivity type opposite to the first conductivity type are sequentially stacked; A first electrode formed on the bottom and connected to the first semiconductor layer; and a second electrode protruding from a bottom surface of the semiconductor stacked body and connected to the second semiconductor layer at a tip of the first electrode. A first light-emitting color, a second light-emitting color, and a third light-emitting color semiconductor light-emitting element each including a protrusion,
The semiconductor light emitting elements of the first emission color, the second emission color, and the third emission color are press-fitted so that the protrusion is embedded in the laminated substrate from the surface of the first metal layer,
The protrusion of the first light emitting semiconductor light emitting element penetrates the first base substrate, the first electrode is electrically connected to the first metal layer, and the second electrode is Insulated from the first metal layer and electrically connected to the second metal layer;
The protrusion of the second light emitting semiconductor light emitting element penetrates the first base substrate and the second base substrate, and the first electrode is electrically connected to the first metal layer, The second electrode is insulated from the first metal layer and the second metal layer and electrically connected to the third metal layer;
The protrusion of the third light emitting semiconductor light emitting element penetrates the first base substrate, the second base substrate, and the third base substrate, and the first electrode is the first metal layer. And the second electrode is insulated from the first metal layer, the second metal layer, and the third metal layer and electrically connected to the fourth metal layer. Yes,
A semiconductor light-emitting device.