JP6283507B2 - 半導体デバイス計測装置及び半導体デバイス計測方法 - Google Patents

半導体デバイス計測装置及び半導体デバイス計測方法 Download PDF

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Publication number
JP6283507B2
JP6283507B2 JP2013247143A JP2013247143A JP6283507B2 JP 6283507 B2 JP6283507 B2 JP 6283507B2 JP 2013247143 A JP2013247143 A JP 2013247143A JP 2013247143 A JP2013247143 A JP 2013247143A JP 6283507 B2 JP6283507 B2 JP 6283507B2
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signal
semiconductor device
light
correction value
harmonic
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Japanese (ja)
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JP2015105851A5 (enExample
JP2015105851A (ja
Inventor
章弘 大高
章弘 大高
充哲 西沢
充哲 西沢
伸幸 平井
伸幸 平井
共則 中村
共則 中村
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Hamamatsu Photonics KK
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Hamamatsu Photonics KK
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Priority to JP2013247143A priority Critical patent/JP6283507B2/ja
Priority to US14/552,926 priority patent/US9618576B2/en
Priority to KR1020140165434A priority patent/KR102270039B1/ko
Publication of JP2015105851A publication Critical patent/JP2015105851A/ja
Publication of JP2015105851A5 publication Critical patent/JP2015105851A5/ja
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • G01R31/311—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation of integrated circuits

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Health & Medical Sciences (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Tests Of Electronic Circuits (AREA)
JP2013247143A 2013-11-29 2013-11-29 半導体デバイス計測装置及び半導体デバイス計測方法 Active JP6283507B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2013247143A JP6283507B2 (ja) 2013-11-29 2013-11-29 半導体デバイス計測装置及び半導体デバイス計測方法
US14/552,926 US9618576B2 (en) 2013-11-29 2014-11-25 Apparatus for testing a semiconductor device and method of testing a semiconductor device
KR1020140165434A KR102270039B1 (ko) 2013-11-29 2014-11-25 반도체 디바이스 테스트 장치 및 반도체 디바이스 테스트 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013247143A JP6283507B2 (ja) 2013-11-29 2013-11-29 半導体デバイス計測装置及び半導体デバイス計測方法

Publications (3)

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JP2015105851A JP2015105851A (ja) 2015-06-08
JP2015105851A5 JP2015105851A5 (enExample) 2016-10-13
JP6283507B2 true JP6283507B2 (ja) 2018-02-21

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JP2013247143A Active JP6283507B2 (ja) 2013-11-29 2013-11-29 半導体デバイス計測装置及び半導体デバイス計測方法

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US (1) US9618576B2 (enExample)
JP (1) JP6283507B2 (enExample)
KR (1) KR102270039B1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9562944B2 (en) * 2013-02-01 2017-02-07 Hamamatsu Photonics K.K. Semiconductor device inspection device and semiconductor device inspection method
JP6283507B2 (ja) * 2013-11-29 2018-02-21 浜松ホトニクス株式会社 半導体デバイス計測装置及び半導体デバイス計測方法
US10432434B2 (en) * 2016-07-20 2019-10-01 Tektronix, Inc. Multi-band noise reduction systems and methods
US11079432B2 (en) * 2019-02-19 2021-08-03 Nxp B.V. Integrated laser voltage probe pad for measuring DC or low frequency AC electrical parameters with laser based optical probing techniques
US12105858B2 (en) * 2020-03-11 2024-10-01 University Of Florida Research Foundation, Incorporated Systems and methods for laser probing for hardware trojan detection
EP4213189A4 (en) 2020-09-23 2024-09-18 Hamamatsu Photonics K.K. INSPECTION DEVICE

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2556910B2 (ja) * 1989-11-30 1996-11-27 浜松ホトニクス株式会社 光強度変化検出装置
US5666062A (en) * 1994-09-19 1997-09-09 Hamamatsu Photonics K.K. Voltage measuring using electro-optic material's change in refractive index
JP3352244B2 (ja) * 1994-09-19 2002-12-03 浜松ホトニクス株式会社 電圧測定装置
US7450245B2 (en) 2005-06-29 2008-11-11 Dcg Systems, Inc. Method and apparatus for measuring high-bandwidth electrical signals using modulation in an optical probing system
US7733100B2 (en) 2005-08-26 2010-06-08 Dcg Systems, Inc. System and method for modulation mapping
KR101210497B1 (ko) 2005-12-19 2012-12-10 인하대학교 산학협력단 자기변형 현상을 이용한 초소형 이동체
JP4951378B2 (ja) * 2007-03-20 2012-06-13 株式会社アドバンテスト 波形発生器および試験装置
SG10201506637YA (en) 2009-05-01 2015-10-29 Dcg Systems Inc Systems and method for laser voltage imaging state mapping
JP5894745B2 (ja) 2011-05-31 2016-03-30 浜松ホトニクス株式会社 集積回路検査装置
JP6166032B2 (ja) 2012-11-06 2017-07-19 浜松ホトニクス株式会社 半導体デバイス検査装置及び半導体デバイス検査方法
JP6283507B2 (ja) 2013-11-29 2018-02-21 浜松ホトニクス株式会社 半導体デバイス計測装置及び半導体デバイス計測方法

Also Published As

Publication number Publication date
US9618576B2 (en) 2017-04-11
KR102270039B1 (ko) 2021-06-25
US20150153408A1 (en) 2015-06-04
JP2015105851A (ja) 2015-06-08
KR20150062974A (ko) 2015-06-08

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