JP6278462B2 - 磁場検出方法 - Google Patents
磁場検出方法 Download PDFInfo
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- JP6278462B2 JP6278462B2 JP2014146572A JP2014146572A JP6278462B2 JP 6278462 B2 JP6278462 B2 JP 6278462B2 JP 2014146572 A JP2014146572 A JP 2014146572A JP 2014146572 A JP2014146572 A JP 2014146572A JP 6278462 B2 JP6278462 B2 JP 6278462B2
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- 238000001514 detection method Methods 0.000 title claims description 66
- 230000005684 electric field Effects 0.000 claims description 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 17
- 229910003460 diamond Inorganic materials 0.000 claims description 14
- 239000010432 diamond Substances 0.000 claims description 14
- 229910052799 carbon Inorganic materials 0.000 claims description 10
- 229910052757 nitrogen Inorganic materials 0.000 claims description 10
- 238000006467 substitution reaction Methods 0.000 claims description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 150000001721 carbon Chemical group 0.000 claims description 5
- 230000007547 defect Effects 0.000 claims description 5
- 239000012535 impurity Substances 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 230000003993 interaction Effects 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 2
- 239000000523 sample Substances 0.000 description 10
- 238000005259 measurement Methods 0.000 description 7
- 230000005283 ground state Effects 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000005281 excited state Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000002887 superconductor Substances 0.000 description 2
- KSPMJHKUXSQDSZ-UHFFFAOYSA-N [N].[N] Chemical compound [N].[N] KSPMJHKUXSQDSZ-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004651 near-field scanning optical microscopy Methods 0.000 description 1
- 150000002829 nitrogen Chemical class 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
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- Investigating Or Analysing Materials By Optical Means (AREA)
Description
Claims (1)
- ダイヤモンド格子中の炭素の置換位置に入った窒素と、この置換窒素に隣接する炭素原子が抜けた空孔との対からなる複合不純物欠陥であるNV中心を有するダイヤモンドからなる検出素子のNV中心における電子スピンに電場を印加し、以下の式(第1の状態)で示される|Br〉と、以下の式(第2の状態)で示される|Da〉の間の前記電子スピンのエネルギー差を、ターゲットAC磁場の周波数に等しい状態とする周波数制御ステップと、
前記電子スピンを|0〉に偏極させる電子スピン状態制御ステップと、
|0〉に偏極した前記電子スピンに、|0〉と前記|Br〉との間の差に共鳴するマイクロ波を印加する第1マイクロ波印加ステップと、
前記第1マイクロ波印加ステップの後で、前記電子スピンを測定対象の磁場に相互作用させる相互作用ステップと、
前記電子スピンを測定対象の磁場に相互作用させた後、|0〉と前記|Br〉との間の差に共鳴するマイクロ波を前記電子スピンに印加する第2マイクロ波印加ステップと、
前記第2マイクロ波印加ステップの後で、前記検出素子にレーザー光を照射することで前記電子スピンの状態を検出する電子スピン状態検出ステップと
を備えることを特徴とする磁場検出方法。
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JP2014146572A JP6278462B2 (ja) | 2014-07-17 | 2014-07-17 | 磁場検出方法 |
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JP2014146572A JP6278462B2 (ja) | 2014-07-17 | 2014-07-17 | 磁場検出方法 |
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JP2016023965A JP2016023965A (ja) | 2016-02-08 |
JP6278462B2 true JP6278462B2 (ja) | 2018-02-14 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN111504884A (zh) * | 2020-05-19 | 2020-08-07 | 中国科学技术大学 | 基于钻石nv色心的微观电阻抗成像装置及方法 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
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JP6616342B2 (ja) * | 2017-02-28 | 2019-12-04 | 日本電信電話株式会社 | 磁場検出装置および方法 |
CN107807315B (zh) * | 2017-10-31 | 2023-12-19 | 国网安徽省电力公司电力科学研究院 | 用于检测电气设备的绝缘缺陷的方法 |
CN108061871B (zh) * | 2017-10-31 | 2024-08-23 | 国网安徽省电力公司电力科学研究院 | 用于检测系统的支架、控制装置和检测系统 |
CN107728027B (zh) * | 2017-10-31 | 2023-05-16 | 国网安徽省电力公司电力科学研究院 | 用于变压器套管的绝缘缺陷检测装置及方法 |
JP6795803B2 (ja) * | 2018-03-02 | 2020-12-02 | 国立大学法人京都大学 | センサ素子、測定装置、センサ素子の製造方法、電子回路素子、および量子情報素子 |
JP7066531B2 (ja) * | 2018-06-01 | 2022-05-13 | 株式会社日立製作所 | 探針製造装置、及び方法 |
JP7194327B2 (ja) * | 2018-07-03 | 2022-12-22 | スミダコーポレーション株式会社 | 磁場測定装置および磁場測定方法 |
JP7209176B2 (ja) | 2018-10-26 | 2023-01-20 | スミダコーポレーション株式会社 | 磁場発生源検出装置および磁場発生源検出方法 |
JP7465467B2 (ja) * | 2020-05-12 | 2024-04-11 | スミダコーポレーション株式会社 | 磁場測定装置および磁場測定方法 |
Family Cites Families (3)
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US8947080B2 (en) * | 2007-12-03 | 2015-02-03 | President And Fellows Of Harvard College | High sensitivity solid state magnetometer |
JP5476206B2 (ja) * | 2010-02-02 | 2014-04-23 | 日本電子株式会社 | 蛍光顕微鏡装置 |
GB201015260D0 (en) * | 2010-09-14 | 2010-10-27 | Element Six Ltd | A microfluidic cell and a spin resonance device for use therewith |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN111504884A (zh) * | 2020-05-19 | 2020-08-07 | 中国科学技术大学 | 基于钻石nv色心的微观电阻抗成像装置及方法 |
CN111504884B (zh) * | 2020-05-19 | 2021-07-09 | 中国科学技术大学 | 基于钻石nv色心的微观电阻抗成像装置及方法 |
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