JP6273112B2 - フリップフロップ回路および半導体装置 - Google Patents

フリップフロップ回路および半導体装置 Download PDF

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Publication number
JP6273112B2
JP6273112B2 JP2013182785A JP2013182785A JP6273112B2 JP 6273112 B2 JP6273112 B2 JP 6273112B2 JP 2013182785 A JP2013182785 A JP 2013182785A JP 2013182785 A JP2013182785 A JP 2013182785A JP 6273112 B2 JP6273112 B2 JP 6273112B2
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Japan
Prior art keywords
transistor
inverter
film
flip
flop circuit
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Expired - Fee Related
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JP2013182785A
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English (en)
Japanese (ja)
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JP2014075785A (ja
JP2014075785A5 (enExample
Inventor
雅史 藤田
雅史 藤田
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2013182785A priority Critical patent/JP6273112B2/ja
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Publication of JP2014075785A5 publication Critical patent/JP2014075785A5/ja
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/01—Details
    • H03K3/012—Modifications of generator to improve response time or to decrease power consumption
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/027—Generators characterised by the type of circuit or by the means used for producing pulses by the use of logic circuits, with internal or external positive feedback
    • H03K3/037—Bistable circuits
    • H03K3/0375—Bistable circuits provided with means for increasing reliability; for protection; for ensuring a predetermined initial state when the supply voltage has been applied; for storing the actual state when the supply voltage fails
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356104—Bistable circuits using complementary field-effect transistors
    • H03K3/356113—Bistable circuits using complementary field-effect transistors using additional transistors in the input circuit
    • H03K3/356147—Bistable circuits using complementary field-effect transistors using additional transistors in the input circuit using pass gates
    • H03K3/356156—Bistable circuits using complementary field-effect transistors using additional transistors in the input circuit using pass gates with synchronous operation
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/3562—Bistable circuits of the primary-secondary type
    • H03K3/35625—Bistable circuits of the primary-secondary type using complementary field-effect transistors
JP2013182785A 2012-09-11 2013-09-04 フリップフロップ回路および半導体装置 Expired - Fee Related JP6273112B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013182785A JP6273112B2 (ja) 2012-09-11 2013-09-04 フリップフロップ回路および半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012199419 2012-09-11
JP2012199419 2012-09-11
JP2013182785A JP6273112B2 (ja) 2012-09-11 2013-09-04 フリップフロップ回路および半導体装置

Publications (3)

Publication Number Publication Date
JP2014075785A JP2014075785A (ja) 2014-04-24
JP2014075785A5 JP2014075785A5 (enExample) 2016-10-20
JP6273112B2 true JP6273112B2 (ja) 2018-01-31

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JP2013182785A Expired - Fee Related JP6273112B2 (ja) 2012-09-11 2013-09-04 フリップフロップ回路および半導体装置

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US (1) US9054679B2 (enExample)
JP (1) JP6273112B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5864047B2 (ja) * 2010-09-23 2016-02-17 株式会社半導体エネルギー研究所 半導体装置
US9473117B2 (en) 2015-02-13 2016-10-18 Samsung Electronics Co., Ltd. Multi-bit flip-flops and scan chain circuits
KR102216807B1 (ko) 2015-03-25 2021-02-19 삼성전자주식회사 반도체 회로
KR102588078B1 (ko) * 2016-11-21 2023-10-13 엘지디스플레이 주식회사 표시장치
JP2021097317A (ja) * 2019-12-17 2021-06-24 セイコーエプソン株式会社 フリップフロップ回路および発振器
CN111710310B (zh) * 2020-06-30 2022-04-22 厦门天马微电子有限公司 多路分配电路、阵列基板、显示面板和装置及驱动方法

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07183771A (ja) 1993-12-22 1995-07-21 Fujitsu Ltd フリップフロップ回路
US5508648A (en) * 1994-08-01 1996-04-16 Intel Corporation Differential latch circuit
JPH09232919A (ja) * 1996-02-23 1997-09-05 Nippon Telegr & Teleph Corp <Ntt> ラッチ回路およびフリップフロップ回路
JPH09232920A (ja) * 1996-02-28 1997-09-05 Nec Ic Microcomput Syst Ltd フリップフロップ回路
JPH10163820A (ja) * 1996-12-05 1998-06-19 Kawasaki Steel Corp 半導体装置
JP3653170B2 (ja) * 1998-01-27 2005-05-25 三菱電機株式会社 ラッチ回路およびフリップフロップ回路
JP2000124792A (ja) * 1998-10-20 2000-04-28 New Japan Radio Co Ltd レベルシフト回路
JP2002190198A (ja) * 2000-12-20 2002-07-05 Hitachi Ltd レベル変換回路及び半導体集積回路並びに半導体記憶装置
JP3673230B2 (ja) * 2002-03-06 2005-07-20 日本電信電話株式会社 フリップフロップ回路
WO2005022746A1 (en) * 2003-09-03 2005-03-10 Koninklijke Philips Electronics N.V. A static latch
JP2007272953A (ja) 2006-03-30 2007-10-18 Fujitsu Ltd 半導体装置
US7405606B2 (en) * 2006-04-03 2008-07-29 Intellectual Ventures Fund 27 Llc D flip-flop
US7956662B2 (en) * 2009-01-16 2011-06-07 Freescale Semiconductor, Inc. Flip-flop circuit with internal level shifter
US8143929B2 (en) * 2009-10-28 2012-03-27 Freescale Semiconductor, Inc. Flip-flop having shared feedback and method of operation
CN102668377B (zh) * 2009-12-18 2015-04-08 株式会社半导体能源研究所 非易失性锁存电路和逻辑电路以及使用它们的半导体器件
JP2011233559A (ja) * 2010-04-23 2011-11-17 Toshiba Corp 半導体集積回路及びその設計方法
TWI567735B (zh) 2011-03-31 2017-01-21 半導體能源研究所股份有限公司 記憶體電路，記憶體單元，及訊號處理電路
TWI567736B (zh) 2011-04-08 2017-01-21 半導體能源研究所股份有限公司 記憶體元件及信號處理電路
US8854867B2 (en) 2011-04-13 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Memory device and driving method of the memory device
US9070776B2 (en) 2011-04-15 2015-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
TWI541978B (zh) 2011-05-11 2016-07-11 半導體能源研究所股份有限公司 半導體裝置及半導體裝置之驅動方法
TWI536502B (zh) 2011-05-13 2016-06-01 半導體能源研究所股份有限公司 記憶體電路及電子裝置
US8564331B2 (en) 2011-05-13 2013-10-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5886496B2 (ja) 2011-05-20 2016-03-16 株式会社半導体エネルギー研究所 半導体装置
TWI616873B (zh) 2011-05-20 2018-03-01 半導體能源研究所股份有限公司 儲存裝置及信號處理電路
KR101912971B1 (ko) 2011-05-26 2018-10-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 분주 회로 및 분주 회로를 이용한 반도체 장치
US8542048B2 (en) * 2011-06-01 2013-09-24 Freescale Semiconductor, Inc. Double edge triggered flip flop
US8804405B2 (en) 2011-06-16 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
US8982607B2 (en) 2011-09-30 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Memory element and signal processing circuit
US8736315B2 (en) 2011-09-30 2014-05-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20140125392A1 (en) * 2012-11-05 2014-05-08 Arm Limited Low power latching circuits

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US9054679B2 (en) 2015-06-09
JP2014075785A (ja) 2014-04-24
US20140070861A1 (en) 2014-03-13

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