JP6272151B2 - Semiconductor laser device and position adjustment method for semiconductor laser device - Google Patents

Description

  The present invention relates to a semiconductor laser element and a method for adjusting the position of the semiconductor laser element, and is suitable for improving the alignment accuracy when the semiconductor laser element is mounted on a mounting substrate.

  A semiconductor laser element called an edge-emitting laser has a structure in which a plurality of layers including an active layer are stacked, and an end surface region of the active layer in a cut surface cut along a direction in which the plurality of layers are stacked The light is emitted from.

  The cut surface of this semiconductor laser element is generally cut by cleavage. Cleavage is a technique for cutting a crystal using the property of being easily broken along a specific direction when a mechanical force is applied to the crystal. Since the surface appearing by this cleavage becomes smooth, it can be used as a reflection mirror without polishing or the like.

  Such a semiconductor laser element is mounted on a mounting substrate in a state where it is optically coupled with other optical components. When a semiconductor laser element is mounted on a mounting substrate, it is required that the amount of deviation with respect to the position where it is originally mounted be several μm or less in order to increase the optical coupling efficiency between the semiconductor laser element and another optical component.

  Semiconductor laser element position adjustment methods are mainly classified into an active alignment method and a passive alignment method. The active alignment method is a method of driving a semiconductor laser element and adjusting a position using an input signal of the semiconductor laser element in the driving state. On the other hand, the passive alignment method is a method of adjusting the position using an image signal of the semiconductor laser element without driving the semiconductor laser element. The following Patent Document 1 and Patent Document 2 have been proposed as the position adjustment method of the passive alignment method.

JP 2008-241732 A JP 2002-62447 A

  Patent Document 1 proposes a position adjustment method for mounting an optical element (LD) on a substrate in a state where the optical element (LD) is optically coupled to a waveguide core of an optical waveguide portion formed on the substrate. ing. That is, LD side alignment markers are provided on both sides of the active line in the optical element, and substrate side alignment markers are provided at positions on the substrate corresponding to the LD side alignment marker of the optical element. Further, a reference marker for mounting the optical element at a corresponding position of the waveguide core is provided together with the waveguide core.

  As described above, in the position adjustment method of Patent Document 1, the reference marker is provided together with the waveguide core to be an absolute reference when mounting the optical element, and the normal position where the optical element is to be mounted is determined. I try to make it specific.

  However, the cut surface of the optical element obtained by cleavage may be shifted in the longitudinal direction of the active line in the optical element. In addition, as described above, the deviation width of the cut surface may be about 10 μm although it is required that the deviation amount with respect to the position to be originally mounted be several μm or less. However, in the position adjustment method of Patent Document 1, since the reference marker serves as an absolute reference when mounting the optical element, the deviation width of the cut surface of the optical element is directly reflected as an error during mounting. There's a problem.

  One of the position adjustment methods that solves this problem is Patent Document 2 described above. Patent Document 2 proposes a position adjusting method for mounting an optical semiconductor element on a mounting substrate in a state where the optical semiconductor element is optically coupled to an optical waveguide formed on the mounting substrate. In other words, at least one element marker is formed on the optical semiconductor element so as to reach an end surface that is parallel to the optical waveguide of the optical semiconductor element and at least an end of the optical semiconductor element abuts against the mounting substrate. The mounting substrate has at least one mounting marker parallel to the optical waveguide formed on the mounting substrate and reaching at least an end surface where the end portion abuts against the optical semiconductor element, and the element marker and the end position. Are formed so as to be aligned.

  As described above, the position adjustment method of Patent Document 2 is related to the cleavage accuracy when cutting out the optical semiconductor element by forming each of the element marker and the mounting marker so as to be parallel to the waveguide and to reach the end face. Rather, the relative position of the design value is taken.

  However, when the cut surface of the optical semiconductor element obtained by cleavage is inclined with respect to the surface to be originally cut, the end portion of the element marker in the optical semiconductor element is also inclined. For this reason, when the position of the end of the mounting marker is aligned with the end of the element marker, the optical waveguide formed on the mounting substrate is inclined with respect to the waveguide in the optical semiconductor element, and optical coupling There is a problem that the efficiency is significantly reduced.

  Therefore, an object of the present invention is to provide a semiconductor laser element and a semiconductor laser element position adjusting method capable of improving the alignment accuracy regardless of the state of the cut surface of the semiconductor laser element.

The present invention provides a semiconductor laser having a structure in which a plurality of layers including an active layer are stacked, and emitting light from a region of the active layer in a cut surface cut along a direction in which the plurality of layers are stacked. A first alignment mark and a second alignment mark that are used to adjust the position of the semiconductor laser element, and the first alignment mark and the second alignment mark are formed by laminating the plurality of layers. When the semiconductor laser element is viewed in plan from the direction, the semiconductor laser element has a constant width in a direction perpendicular to the longitudinal direction of the waveguide formed in the active layer, and one end of the first alignment mark is at the semiconductor laser element extend in the longitudinal direction of the waveguide in a state of contact with the cut surface of the second alignment mark, Sessu a cut surface of said semiconductor laser element Said one end of the first alignment mark located on the opposite side to the cutting plane side relative to the opposite other end, characterized in that extending along the longitudinal direction of the waveguide.

The present invention also relates to a method for adjusting the position of a semiconductor laser device, wherein the semiconductor laser device having a structure in which a plurality of layers including an active layer are stacked is viewed in plan view from the direction in which the plurality of layers are stacked. In the captured image, a region where the similarity between the first template image indicating one end portion of the first alignment mark is equal to or greater than a predetermined value, and one end portion of the first alignment mark A search step for searching for a region where the similarity with the second template image showing a part of the second alignment mark in a positional relationship is a predetermined value or more; and when each of the regions is present, by using the predetermined point at one end portion, and a point which is said predetermined point and the predetermined positional relationship, match the positions of the semiconductor laser device and the implementation substrate position And the first alignment mark and the second alignment mark are longitudinal directions of the waveguide formed in the active layer when the semiconductor laser element is viewed in plan view from the direction in which the plurality of layers are stacked. is a constant width in the direction perpendicular to the said first alignment mark, said one end extending along the longitudinal direction of the waveguide in a state of contact with the cut surface of the semiconductor laser device, the second The alignment mark is located on the opposite side to the cut surface with respect to the other end opposite to the one end of the first alignment mark that contacts the cut surface of the semiconductor laser element, and extends along the longitudinal direction of the waveguide. It is characterized by extending.

On an image obtained by planarly viewing the semiconductor laser element from the direction in which the plurality of layers are stacked, one end portion of the first alignment mark in contact with the end surface of the semiconductor laser element and a predetermined position with respect to the one end portion of the first alignment mark The positional relationship of the coordinate point relative to a part of the second alignment mark in the relationship does not change.
That is, the first alignment mark is recognized on the image even if the cut surface of the semiconductor laser element is shifted in the longitudinal direction of the waveguide formed in the active layer or inclined with respect to the surface to be originally cut. As long as it is done, there is always a point having a predetermined positional relationship with respect to the end point of the first alignment mark.
Therefore, if the second alignment mark is positioned at a point having a predetermined positional relationship with respect to the end point of the first alignment mark, these two points are the absolute reference regardless of the state of the cut surface of the semiconductor laser element. It becomes. As a result, it is possible to accurately align based on the end point of the first alignment mark and the point of the second alignment mark that is in a predetermined positional relationship with the end point.
Thus, there is provided a semiconductor laser element and a peninsula laser element position adjustment method capable of improving the alignment accuracy regardless of the state of the cut surface of the semiconductor laser element.

  The first alignment mark and the second alignment mark are preferably arranged so as to overlap the waveguide when the semiconductor laser element is viewed in plan from the direction in which the plurality of layers are stacked.

  When arranged in this way, the first alignment mark may be formed even if it is difficult to see the waveguide formed in the layer inside the semiconductor laser element when the semiconductor laser element is viewed in plan from the direction in which the plurality of layers are stacked. And the direction of the waveguide can be grasped by the arrangement position of the second alignment mark.

  The first alignment mark is disposed on one region side with respect to the waveguide when the semiconductor laser element is viewed in a plan view from the direction in which the plurality of layers are stacked, and the second alignment mark is When the semiconductor laser element is viewed in plan from the direction in which the plurality of layers are stacked, it is preferable that the semiconductor laser element is disposed on a region opposite to the one region with respect to the waveguide.

  When arranged in this way, the first alignment mark and the second alignment mark are separated from each other as compared with the case where both the first alignment mark and the second alignment mark are arranged on one region side with respect to the waveguide. Can be arranged. For this reason, even if the shift | offset | difference at the time of mounting a semiconductor laser element on a mounting board using these alignment marks is comparatively large compared with the case where the distance of a 1st alignment mark and a 2nd alignment mark is near, mounting to an alignment mark The change in angle with the substrate can be reduced. Therefore, the alignment accuracy can be further improved.

  In addition, when the semiconductor laser element is viewed in plan from the direction in which the plurality of layers are stacked, the distance from the waveguide to the first alignment mark and the distance from the waveguide to the second alignment mark are It is preferable to be the same level.

  When arranged in this manner, the relative position between the first alignment mark and the second alignment mark even if the semiconductor laser element thermally expands due to heat generated by soldering or the like when mounting the semiconductor laser element. Deviation is reduced. Therefore, compared with the case where the distance of the first alignment mark and the distance of the second alignment mark are different with respect to the waveguide, it is possible to mitigate a decrease in positional accuracy due to the thermal expansion of the semiconductor laser element.

  The first alignment mark and the second alignment mark are arranged on one region side with respect to the waveguide when the semiconductor laser element is viewed in plan from the direction in which the plurality of layers are stacked. Anyway.

  The first alignment mark and the second alignment mark are preferably disposed on the same plane.

  When arranged in this way, the alignment mark actually arranged with respect to the semiconductor laser element and the plurality of layers are compared with the case where the first alignment mark and the second alignment mark are not arranged on the same plane. Therefore, it is possible to reduce the relative displacement from the alignment mark on the image obtained by planarly viewing the semiconductor laser element from the direction in which the semiconductor laser elements are stacked.

  As described above, according to the present invention, a semiconductor laser element and a position adjustment method that can improve alignment accuracy are provided.

It is the schematic which shows the optical module of 1st Embodiment. It is a figure which shows a mode that the semiconductor laser element was planarly viewed from the lamination direction. It is the schematic which shows the mounting system of a semiconductor laser element. It is a figure which shows a 1st template image. It is a figure which shows a 2nd template image. It is a figure where it uses for description of relative position information. It is a flowchart which shows a mounting process procedure. It is a figure which shows a mode that the semiconductor laser element of 2nd Embodiment was planarly viewed from the lamination direction. It is a figure which shows a mode that the semiconductor laser element of 3rd Embodiment was planarly viewed from the lamination direction.

  DESCRIPTION OF EMBODIMENTS Hereinafter, preferred embodiments of a semiconductor laser device and a position adjusting method according to the present invention will be described in detail with reference to the drawings.

(First embodiment)
FIG. 1 is a schematic view showing an optical module 1 of the first embodiment. As shown in FIG. 1, the optical module 1 of this embodiment includes a mounting substrate 10, an optical waveguide device 20, and a semiconductor laser element 30 as main components.

  The mounting substrate 10 includes a first mounting part 11 and a second mounting part 12. An optical waveguide device 20 is formed on the mounting surface of the first mounting portion 11. Of the mounting surface of the second mounting portion 12, the substrate side electrode 13 and the substrate side markers 14 and 15 are provided in the mounting region where the semiconductor laser element 30 is to be mounted.

  These substrate-side markers 14 and 15 are positioned with respect to the optical waveguide device 20 mounted on the mounting surface of the first mounting unit 11, and the position of the semiconductor laser element 30 to be mounted on the second mounting unit 12 of the first mounting unit 11. In the example shown in FIG. 1, it is an isosceles triangle.

  The optical waveguide device 20 includes a base portion 21 formed on the mounting surface of the first mounting portion 11 in the mounting substrate 10, a cladding portion 22 formed on the base portion 21, and a core portion 23 surrounded by the cladding portion 22. And have. Light emitted from the semiconductor laser element 30 mounted on the second mounting portion 12 of the mounting substrate 10 enters the core portion 23.

  The semiconductor laser element 30 is an element called an edge emitting laser or the like, and an n-side electrode 31, an n-type substrate 32, an n-type cladding layer 33, an active layer 34, a p-type cladding layer 35, and a p-side electrode 36 are sequentially stacked. Has the structure. The n-side electrode 31 is soldered to the substrate-side electrode 13 in the mounting substrate 10, whereby the semiconductor laser element 30 is mounted on the second mounting portion 12 of the mounting substrate 10. In FIG. 1, for convenience, the state before the semiconductor laser element 30 is mounted on the second mounting portion 12 is shown.

  The cut surface of the semiconductor laser element 30 is cut by cleavage, and the end face region of the active layer 34 that intersects the longitudinal direction of the active layer 34 is a reflection mirror.

  In such a semiconductor laser device 30, when a voltage is applied to the n-side electrode 31 and the p-side electrode 36, electrons flow from the n-type cladding layer 33 to the active layer 34 and from the p-type cladding layer 35 to the active layer. Holes flow into 34.

  When electrons and holes that flow into the active layer 34 combine with each other, light is emitted. The emitted light is confined by the n-type cladding layer 33 and the p-type cladding layer 35, and the active layer 34 extends along its longitudinal direction. A waveguide is formed. Since the light of this waveguide is reflected by the end face of the active layer 34, it reciprocates while being amplified in the active layer 34. As a result, stimulated emission occurs and laser oscillation occurs, and the laser light is emitted from the end face of the active layer 34.

  The semiconductor laser element 30 in the present embodiment is provided with a first alignment mark 41 and a second alignment mark 42 that are used to adjust the position in the semiconductor laser element 30.

  The first alignment mark 41 and the second alignment mark 42 are provided on the surface on the n-side electrode 31 side in the semiconductor laser element 30. Specifically, on the surface of the semiconductor laser element 30 on the n-side electrode 31 side, the semiconductor laser element 30 is provided on the n-type substrate 32 on which the n-side electrode 31 is not formed.

  FIG. 2 is a diagram illustrating a state in which the semiconductor laser element 30 is viewed in plan from the stacking direction. In FIG. 2, the n-side electrode 31 is omitted for convenience. As shown in FIG. 2, the first alignment mark 41 and the second alignment mark 42 are a waveguide 34 </ b> A formed in the active layer 34 when the semiconductor laser element 30 is viewed in plan from the direction in which the layers 31 to 36 are laminated. It is arranged to overlap.

  Further, the first alignment mark 41 and the second alignment mark 42 have a constant width in a direction perpendicular to the longitudinal direction of the waveguide 34A when the semiconductor laser element 30 is viewed in a plan view from the direction in which the layers 31 to 36 are stacked. It is said.

  The first alignment mark 41 extends along the longitudinal direction of the waveguide 34 </ b> A in a state where one end thereof is in contact with the light emitting side cut surface of the semiconductor laser element 30. On the other hand, the second alignment mark 42 is located on the opposite side to the cut surface side with respect to the other end opposite to the one end of the first alignment mark 41 in contact with the cut surface of the semiconductor laser element 30, and the length of the waveguide 34 </ b> A. Extends along the direction.

  In the case of the present embodiment, the first alignment mark 41 and the second alignment mark 42 have a thin rectangular parallelepiped shape, and the length of the second alignment mark 42 is larger than the length of the first alignment mark 41. The first alignment mark 41 and the second alignment mark 42 are arranged on a straight line with a predetermined distance therebetween.

  Next, a mounting system 50 for mounting the semiconductor laser element 30 on the mounting substrate 10 in a state where the optical waveguide device 20 is mounted on the first mounting portion 11 of the mounting substrate 10 will be described.

  FIG. 3 is a schematic diagram showing a mounting system 50 for mounting the semiconductor laser element 30. As illustrated in FIG. 3, the mounting system 50 includes a heater 51, a suction holding unit 52, a driving unit 53, an imaging unit 54, a storage unit 55, and a control unit 56 as main components.

  The heater 51 is a heat source that melts the solder, and switches to an on state or an off state in accordance with a command given from the control unit 56. On the mounting surface of the heater 51, the mounting substrate 10 in a state where the optical waveguide device 20 is mounted on the first mounting portion 11 is mounted.

  The mounting substrate 10 mounted on the mounting surface of the heater 51 is sucked and held by a suction mechanism (not shown) through a through hole TH formed in the heater 51. Solder bumps are provided on the substrate-side electrode 13 of the mounting substrate 10. Note that the solder bumps may be provided below the n-side electrode 31 in the semiconductor laser element 30 to be mounted on the mounting substrate 10 instead of the substrate-side electrode 13.

  The adsorption holding unit 52 is a member that adsorbs and holds the semiconductor laser element 30 and is movable in three dimensions in the vertical direction and the horizontal direction. The suction holding unit 52 is generally called a collet or a tool.

  The driving unit 53 drives the suction holding unit 52 in accordance with a command supplied from the control unit 56. That is, when a movement command is given from the control unit 56, the driving unit 53 moves the suction holding unit 52 by a predetermined distance in the vertical direction or the horizontal direction according to the content of the movement command. Further, when the suction command is given from the control unit 56, the drive unit 53 sucks the semiconductor laser element 30 to the suction holding unit 52 until the suction stop command is given.

  The imaging unit 54 includes a camera 54 </ b> A provided at a predetermined site in the vertical direction of the heater 51 and a camera 54 </ b> B provided at a site different from the vertical direction of the heater 51. When an imaging command is given from the control unit 56, the imaging unit 54 takes an image using the camera 54 </ b> A or the camera 54 </ b> B, and gives imaging data obtained as a result of the imaging to the control unit 56. The camera 54B images the semiconductor laser element 30 held by the suction holding unit 52 from the p-side electrode 36 side of the semiconductor laser element 30 from the n-side electrode 31 side.

  The storage unit 55 stores data in accordance with a command supplied from the control unit 56, and gives the stored data to the control unit 56. As shown in FIG. 4, the storage unit 55 stores data of a first template image IM1 indicating one end portion PT1 of the first alignment mark in contact with the cut surface of the semiconductor laser element 30 (hereinafter referred to as first registration data). Is stored in advance.

  In the first template image IM1, a point (hereinafter referred to as a first detection point) P1 to be detected is defined in one end portion PT1 of the first alignment mark 41. In the example shown in FIG. 4, the intersection of the line passing through the center of the width of the first alignment mark 41 and the end surface of the first alignment mark 41 in contact with the cut surface of the semiconductor laser element 30 is defined as the first detection point P1.

  In addition, as shown in FIG. 5, data of the second template image IM2 indicating a part PT2 of the second alignment mark 42 (hereinafter referred to as second registration data) is stored in the storage unit 55 in advance. Note that the second template image IM2 in the present embodiment shows an intermediate portion in the longitudinal direction of the second alignment mark 42.

  In the second template image IM2, a point (hereinafter referred to as a second detection point) P2 to be detected is determined in a part PT2 of the second alignment mark 42. In the example shown in FIG. 5, the center of the second alignment mark 42 in the part PT2 is the second detection point P2.

  Furthermore, as shown in FIG. 6, data indicating the relative relationship between the first detection point P1 and the second detection point P2 (hereinafter referred to as third registration data) is stored in advance. In the example shown in FIG. 6, the distance DT1 in the direction (X direction) along the longitudinal direction of the waveguide 34A between the first detection point P1 and the second detection point P2 and the direction orthogonal to the direction (Y direction). The third registration data indicating the distance DT2 is stored. In the case of this embodiment, the distance DT2 in the Y direction is zero.

  Note that the relative positions of the reference point of the board-side marker 14 and the first detection point P1 on the mounting board 10 and the reference point of the board-side marker 15 and the second detection point P2 on the mounting board 10 have the same relationship. doing. In the example shown in FIG. 1, the reference points of the substrate side markers 14 and 15 are the apex angles of an isosceles triangle having two common sides in common.

  The control unit 56 is connected to the heater 51, the driving unit 53, the imaging unit 54, and the storage unit 55 via signal lines, and appropriately controls the heater 51, the driving unit 53, the imaging unit 54, and the storage unit 55. Then, a mounting process for mounting the semiconductor laser element 30 on the mounting substrate 10 is executed. This mounting process is executed according to the flowchart shown in FIG.

  That is, for example, when receiving a mounting start command from an input unit (not shown) connected to the control unit 56, the control unit 56 proceeds to step SP1, turns on the heater 51, and then proceeds to step SP2.

  In step SP <b> 2, the control unit 56 controls the imaging unit 54 to acquire a captured image of the semiconductor laser element 30 and a captured image of the mounting substrate 10 placed on the heater 51. That is, the control unit 56 controls the driving unit 53 to adsorb the semiconductor laser element 30 from the p-side electrode 36 side to the adsorption holding unit 52 and then moves the adsorption holding unit 52. Then, the control unit 56 stops the suction holding unit 52 at a position vertically above the camera 54B, and acquires a captured image of the semiconductor laser element 30 held by the suction holding unit 52 from the camera 54B. In addition, the control unit 56 acquires a captured image of the mounting board 10 placed on the heater 51 from the camera 54A at a predetermined time, and proceeds to step SP3.

  In step SP3, the control unit 56 controls the storage unit 55 to obtain first registration data. Then, the control unit 56 scans the first template image IM1 indicated in the first registration data within the captured image of the semiconductor laser element 30 acquired in step SP2, and the similarity with the template image IM1 is equal to or greater than a predetermined value. Search for a region.

  When the cut surface of the semiconductor laser element 30 is inclined with respect to the surface to be originally cut and one end portion PT1 of the first alignment mark whose one end is in contact with the cut surface is inclined, the one end portion is inclined. The degree of similarity with the template image IM1 is lower than in the case where it is not. Even in such a case, the degree of similarity with the template image IM1 is set so as to be regarded as the first alignment mark 41.

  Here, when the region where the similarity with the template image IM1 is greater than or equal to a predetermined value is in the captured image, the control unit 56 determines that the region with the highest similarity is the one end portion PT1 of the first alignment mark. The position is detected and the process proceeds to step SP4. In this way, by capturing a region equivalent to the area of the template image IM1 as one end portion PT1 of the first alignment mark, the first alignment mark 41 can be detected even if the one end portion is inclined. it can.

  In step SP4, the control unit 56 controls the storage unit 55 to obtain the second registration data and the third registration data. Next, the control unit 56 relates the distance DT1 in the X direction and the distance DT2 in the Y direction indicated in the third registration data with respect to the first detection point P1 of the one end portion PT1 of the first alignment mark detected in step SP3. The second detection point P2 is recognized. Then, the control unit 56 scans the second template image IM2 indicated by the second registration data using the peripheral area with the second detection point P2 as a reference, and the similarity with the template image IM2 is predetermined. Search for an area that is greater than or equal to the value.

  Even when the cut surface of the semiconductor laser element 30 is shifted in the longitudinal direction of the waveguide 34A in the active layer 34 from the surface to be originally cut, the first detection point P1 and the second detection point P2 are the same. The positional relationship of the indicated coordinate points does not change.

  Here, when there is an area in the captured image in which the similarity with the template image IM2 is equal to or greater than a predetermined value, the control unit 56 determines that the area with the highest similarity is in the middle of the second alignment mark 42. The position is detected and the process proceeds to step SP5. Thus, by capturing the part PT2 of the second alignment mark 42 with reference to the second detection point P2 whose relative position does not change with respect to the first detection point P1, the cut surface of the semiconductor laser element 30 is made active layer 34. Even if it is displaced in the longitudinal direction of the waveguide 34A, the second alignment mark 42 can be detected.

  On the other hand, if there is no region in the captured image in which the similarity with the template image IM1 or IM2 is equal to or greater than a predetermined value in step SP3 or step SP4, the first alignment mark 41 or the second alignment mark 42 that should be originally exists for some reason. It means that it has disappeared or is close to that state. In this case, the control unit 56 recognizes that there is a high possibility that the semiconductor laser element 30 placed at the preparation position is defective, and ends the mounting process.

In step SP5, the controller 56 aligns the relative positions of the semiconductor laser element 30 and the mounting substrate 10.
That is, the control unit 56 controls the suction holding unit 52 and the driving unit 53 to move the semiconductor laser element 30 to above the mounting substrate 10 placed on the heater 51.
Further, the control unit 56 recognizes the center positions of the substrate side marker 14 and the substrate side marker 15 in the captured image of the mounting substrate 10 acquired in step SP2. Then, the controller 56 controls the semiconductor laser element 30 so that the center position of the substrate-side marker 14 and the first detection point P1 coincide with each other, and the center position of the substrate-side marker 15 coincides with the second detection point P2. Adjust the position.
Next, the control unit 56 moves the semiconductor laser element 30 to a position where the substrate-side electrode 13 of the mounting substrate 10 placed on the heater 51 and the n-side electrode 31 of the semiconductor laser element 30 are in contact with each other. The laser element 30 is held and the process proceeds to step SP6.

In step SP6, the control unit 56 solders the n-side electrode 31 of the semiconductor laser element 30 and the substrate-side electrode 13 of the mounting substrate 10.
That is, the control unit 56 measures time after starting to hold the semiconductor laser element 30 at a predetermined position in step SP5. At this time, the solder provided on the substrate side electrode 13 of the mounting substrate 10 melts.
Further, the control unit 56 turns off the heater 51 when a predetermined period has elapsed since the start of holding the semiconductor laser element 30 at the predetermined position in step SP5. At this time, the molten solder is cooled and solidified. Note that the reducing gas may be sprayed after the heater 51 is turned off. Further, this reducing gas may contain an inert gas such as nitrogen.
Next, when a predetermined period elapses after the heater 51 is turned off, the control unit 56 transports the semiconductor laser element 30 mounted on the mounting substrate 10 to a predetermined position, and ends the mounting process.

  In this way, the control unit 56 executes the mounting process. The above-described mounting process procedure is merely an example, and may be executed by a procedure different from the above-described mounting process procedure. For example, the heater 51 is turned on before the positioning of the mounting substrate 10 placed on the heater 51 and the semiconductor laser element 30 in the mounting processing procedure described above, but after the positioning. May be. Further, the imaged image timing of the mounting substrate 10 placed on the heater 51 was before the semiconductor laser element 30 was moved above the mounting substrate 10 in the mounting processing procedure described above. It may be after moving 30.

  As described above, in the semiconductor laser device 30 according to the present embodiment, the first alignment mark 41 and the second alignment mark 42 have the length of the waveguide 34A formed in the active layer 34 when the semiconductor laser device 30 is viewed in plan view. The width is constant in a direction orthogonal to the direction.

  The first alignment mark 41 extends along the longitudinal direction of the waveguide 34 </ b> A in a state where one end thereof is in contact with the cut surface of the semiconductor laser element 30. On the other hand, the second alignment mark 42 is positioned on the opposite side to the cut surface side with respect to the other end opposite to the one end of the first alignment mark that is in contact with the cut surface of the semiconductor laser element 30, and the length of the waveguide 34A. Extends along the direction.

  On the image of the semiconductor laser element 30 as viewed in plan from the stacking direction, the first alignment mark 41 in contact with the end face of the semiconductor laser element 30 and the second alignment mark 42 behind the first alignment mark 41 are the same. They are arranged on a straight line or parallel to each other. Further, the positional relationship between the relative coordinate points of the first alignment mark 41 and the second alignment mark 42 arranged in this way does not change.

That is, even if the cut surface of the semiconductor laser element 30 is shifted in the longitudinal direction of the waveguide 34A formed in the active layer 34 or inclined with respect to the surface to be originally cut, the first alignment mark 41 is As long as it is recognized on the image, there is always a point having a predetermined positional relationship with the end point of the first alignment mark 41.
Therefore, if the second alignment mark 42 is positioned at a point having a predetermined positional relationship with respect to the end point of the first alignment mark 41, these two points are absolute regardless of the state of the cut surface of the semiconductor laser element. Therefore, it is possible to accurately align based on the point. Thus, the alignment accuracy can be improved regardless of the state of the cut surface of the semiconductor laser element 30.

  In the present embodiment, the first alignment mark 41 and the second alignment mark 42 are disposed so as to overlap the active layer 34 when the semiconductor laser element 30 is viewed in plan view from the stacking direction.

  For this reason, when the semiconductor laser element 30 is viewed in plan from the stacking direction, even if it is difficult to see the waveguide 34A inside the semiconductor laser element 30, it is guided by the arrangement positions of the first alignment mark 41 and the second alignment mark 42. The direction of the waveguide 34A can be grasped.

(Second Embodiment)
Next, a second embodiment will be described in detail with reference to FIG. In addition, about the component which is the same as that of 1st Embodiment, or equivalent, except the case where it demonstrates especially, the same referential mark is attached | subjected and the overlapping description is abbreviate | omitted.

  FIG. 8 is a diagram showing a state in which the semiconductor laser device of the second embodiment is viewed in plan from the direction in which a plurality of layers are stacked. As shown in FIG. 8, the optical module according to the present embodiment is different from the first alignment mark 41 and the second alignment mark 42 in the first embodiment in that the first embodiment is different from the first alignment mark 41 in the first embodiment. The optical module 1 is different.

  The first alignment mark 41 in the present embodiment is arranged on one region side with respect to the waveguide 34A formed in the active layer 34 when the semiconductor laser element 30 is viewed in plan from the direction in which the layers 31 to 36 are stacked. Has been.

  On the other hand, the second alignment mark 42 is opposite to the one region side with respect to the waveguide 34A formed in the active layer 34 when the semiconductor laser element 30 is viewed in plan from the direction in which the layers 31 to 36 are laminated. Arranged on the region side.

  When arranged in this way, the first alignment mark 41 and the second alignment mark are compared with the case where both the first alignment mark 41 and the second alignment mark 42 are arranged on one region side with respect to the waveguide 34A. 42 can be arranged further apart.

  For this reason, compared with the case where the distance of the 1st alignment mark 41 and the 2nd alignment mark 42 is near, the shift | offset | difference at the time of mounting the semiconductor laser element 30 on the mounting substrate 10 using these alignment marks 41 and 42 is comparatively. Even if it is large, the change in angle between the alignment mark 41 and the mounting substrate 10 can be reduced. Therefore, the alignment accuracy can be further improved as compared with the first embodiment.

  In the present embodiment, the distance D1 from the waveguide 34A to the first alignment mark 41 and the distance D2 from the waveguide 34A to the second alignment mark 42 are approximately the same. These distances D1 and D2 are directions perpendicular to the longitudinal direction of the waveguide 34A and are the shortest distances to the first alignment marks 41 or 42.

  For this reason, even if the semiconductor laser element 30 is thermally expanded due to heat generated by soldering or the like when the semiconductor laser element 30 is mounted, the relative position between the first alignment mark 41 and the second alignment mark 42. Deviation is reduced.

  Therefore, compared with the case where the distance D1 of the first alignment mark 41 is different from the distance D2 of the second alignment mark 42 with respect to the waveguide 34A, the decrease in positional accuracy due to the thermal expansion of the semiconductor laser element 30 is alleviated. be able to.

  Even in the present embodiment, mounting can be performed by the mounting processing procedure using the mounting system 50 described above. In the present embodiment, the first alignment mark 41 and the second alignment mark 42 are disposed so as to avoid the vertical direction of the waveguide 34A formed in the active layer 34. Therefore, the alignment marks 41 and 42 can be imaged by the camera 54A in a state where the semiconductor laser element 30 is held by the suction holding unit 52. Therefore, in the case of this embodiment, the camera 54B is omitted, and after moving the semiconductor laser element 30 above the mounting substrate 10 placed on the heater 51, the heater 51 and the mounting substrate 10 are moved using the camera 54A. Images may be taken at the same time.

(Third embodiment)
Next, a third embodiment of the present invention will be described in detail with reference to FIG. In addition, about the component which is the same as that of 1st Embodiment, or equivalent, except the case where it demonstrates especially, the same referential mark is attached | subjected and the overlapping description is abbreviate | omitted.

  FIG. 9 is a diagram illustrating a state in which the semiconductor laser element 30 according to the third embodiment is viewed in plan view from the direction in which a plurality of layers are stacked. As shown in FIG. 9, the optical module according to the present embodiment is different from the first alignment mark 41 and the second alignment mark 42 in the first embodiment in that the first embodiment is different from the first alignment mark 41 in the first embodiment. The optical module 1 is different.

  The first alignment mark 41 and the second alignment mark 42 in the present embodiment are based on the waveguide 34A formed in the active layer 34 when the semiconductor laser element 30 is viewed in plan from the direction in which the layers 31 to 36 are stacked. It is arranged on one area side.

  Even in such a case, the alignment accuracy can be improved regardless of the state of the cut surface of the semiconductor laser element 30 as in the case of the first embodiment.

  Even in the present embodiment, mounting can be performed by the mounting processing procedure using the mounting system 50 described above. In the present embodiment, the first alignment mark 41 and the second alignment mark 42 are disposed so as to avoid the vertical direction of the waveguide 34A formed in the active layer 34. Therefore, the alignment marks 41 and 42 can be imaged by the camera 54A in a state where the semiconductor laser element 30 is held by the suction holding unit 52. Therefore, in the case of this embodiment, the camera 54B is omitted, and after moving the semiconductor laser element 30 above the mounting substrate 10 placed on the heater 51, the heater 51 and the mounting substrate 10 are moved using the camera 54A. Images may be taken at the same time.

  As mentioned above, although 1st Embodiment-3rd Embodiment was demonstrated to this invention as an example, this invention is not limited to these embodiment, It can change suitably.

  For example, in the above embodiment, the first alignment mark 41 and the second alignment mark 42 are disposed on the surface of the semiconductor laser element 30. However, one or both of the first alignment mark 41 and the second alignment mark 42 may be disposed inside the semiconductor laser element 30. Specifically, for example, the first alignment mark 41 or the second alignment mark 42 is formed on the n-type substrate 32, the n-type cladding layer 33, or the active layer 34.

  However, when the first alignment mark 41 or the second alignment mark 42 is disposed inside the semiconductor laser element 30, the first alignment mark 41 or the second alignment mark 42 disposed therein has light transmittance. It is necessary. In addition, when the first alignment mark 41 and the second alignment mark 42 are arranged on the same surface, they are actually arranged with respect to the semiconductor laser element 30 as compared with the case where they are not arranged on the same surface. The relative displacement between the alignment mark and the alignment mark on the image obtained by planarly viewing the semiconductor laser element 30 from the direction in which the layers 31 to 36 of the semiconductor laser element 30 are stacked can be reduced.

  In the above embodiment, the first alignment mark 41 or the second alignment mark 42 is provided separately from the n-side electrode 31. However, a part of the n-side electrode 31 may be used as the first alignment mark 41 or the second alignment mark 42. Further, instead of the n-side electrode 31, a part of the p-side electrode 36 may be used as the first alignment mark 41 or the second alignment mark 42.

  Further, in the above-described embodiment, the side of the mounting substrate 10 that should face the mounting surface of the second mounting portion 12 in the semiconductor laser element 30 is the n-side electrode 31 side. It may be 36.

  As described above, according to the present invention, a semiconductor laser element and a method for adjusting the position of the semiconductor laser element that improve the alignment accuracy when the semiconductor laser element is mounted on a mounting substrate are provided. Can be used.

DESCRIPTION OF SYMBOLS 1 ... Optical module 10 ... Mounting board 11 ... 1st mounting part 12 ... 2nd mounting part 13 ... Board | substrate side electrode 14, 15 ... Board | substrate side marker 20 ... Optical waveguide Device 21 ... Base part 22 ... Clad part 23 ... Core part 30 ... Semiconductor laser element 31 ... n-side electrode 32 ... n-type substrate 33 ... n-type clad layer 34. ..Active layer 35... P-type cladding layer 36... P-side electrode 41... First alignment mark 42... Second alignment mark 50. Suction holding unit 53... Drive unit 54... Imaging unit 55.

Claims (7)

A semiconductor laser element having a structure in which a plurality of layers including an active layer are stacked, and emitting light from a region of the active layer in a cut surface cut along a direction in which the plurality of layers are stacked. ,
A first alignment mark and a second alignment mark used for adjusting the position of the semiconductor laser element;
The first alignment mark and the second alignment mark are in a direction perpendicular to the longitudinal direction of the waveguide formed in the active layer when the semiconductor laser element is viewed in plan from the direction in which the plurality of layers are stacked. A certain width,
Wherein the first alignment mark extends along the longitudinal direction of the waveguide in a state where one end is tangent to the cutting face of the semiconductor laser element,
The second alignment mark is located on the opposite side to the cut surface with respect to the other end opposite to the one end of the first alignment mark that contacts the cut surface of the semiconductor laser element, and the longitudinal direction of the waveguide A semiconductor laser element extending along the line without contacting a cut surface of the semiconductor laser element. The first alignment mark and the second alignment mark are arranged so as to overlap the waveguide when the semiconductor laser element is viewed in a plan view from a direction in which the plurality of layers are stacked. 2. The semiconductor laser device according to 1. The first alignment mark is disposed on one region side with respect to the waveguide when the semiconductor laser element is viewed in plan from the direction in which the plurality of layers are stacked.
The second alignment mark is disposed on a region side opposite to the one region side with respect to the waveguide when the semiconductor laser element is viewed in plan from the direction in which the plurality of layers are stacked. The semiconductor laser device according to claim 1, characterized in that: When the semiconductor laser device is viewed in plan from the direction in which the plurality of layers are stacked, the distance from the waveguide to the first alignment mark is approximately the same as the distance from the waveguide to the second alignment mark. The semiconductor laser device according to claim 3, wherein: The first alignment mark and the second alignment mark are arranged on one region side with respect to the waveguide when the semiconductor laser element is viewed in a plan view from a direction in which the plurality of layers are stacked. The semiconductor laser device according to claim 1. 6. The semiconductor laser device according to claim 1, wherein the first alignment mark and the second alignment mark are arranged on the same plane. An acquisition step of obtaining a captured image obtained by planarly viewing a semiconductor laser element having a structure in which a plurality of layers including an active layer are stacked, from a direction in which the plurality of layers are stacked;
In the captured image, a region where the similarity with the first template image indicating one end portion of the first alignment mark is a predetermined value or more, and a second alignment in a predetermined positional relationship with the one end portion of the first alignment mark. A search step for searching for an area where the similarity with the second template image indicating a part of the mark is a predetermined value or more;
If there is each said region includes a predetermined point at one end portion of the first alignment mark, wherein by using a predetermined point and a point having a predetermined positional relationship, between the semiconductor laser device and the implementation substrate An alignment step for aligning the position,
The first alignment mark and the second alignment mark are in a direction perpendicular to the longitudinal direction of the waveguide formed in the active layer when the semiconductor laser element is viewed in plan from the direction in which the plurality of layers are stacked. A certain width,
Wherein the first alignment mark extends along the longitudinal direction of the waveguide in a state where the one end is tangent to the cutting face of the semiconductor laser element,
The second alignment mark is located on the opposite side to the cut surface with respect to the other end opposite to the one end of the first alignment mark that contacts the cut surface of the semiconductor laser element, and the longitudinal direction of the waveguide A position adjusting method characterized by extending without contacting the cut surface of the semiconductor laser element .

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