JP6270027B2 - Semiconductor device manufacturing equipment - Google Patents

Description

  The present invention relates to a semiconductor device manufacturing apparatus formed by bonding a semiconductor chip and a wiring metal.

  2. Description of the Related Art Recent semiconductor devices, particularly semiconductor devices called high power modules having a large current density, are required to be usable even in a high temperature environment. Therefore, in a mounting structure of a semiconductor device, a joint having excellent high temperature durability when held at a high temperature or subjected to a high temperature thermal cycle is strongly desired. From the viewpoint of environmental protection, a Pb (lead) -free joining technique is essential.

  Currently, Sn (tin) -Ag (silver) -Cu (copper) based solder is widely used for bonding for mounting such semiconductor devices, but the operating temperature is the melting point of the solder (for example, It is limited to about 200 ° C. or less. Further, for example, in a joint where the electrode is Cu, a Cu-Sn brittle intermetallic compound layer is generated at the interface, resulting in poor high-temperature durability. Therefore, various attempts have been made to ensure the high temperature durability of the joint.

  For example, a low-temperature bonding method has been proposed in which active surface energy of metal nanoparticles is used to aggregate and bond at a low temperature (see Patent Document 1). If this joining method is used, the joining interface after agglomeration becomes a bulk metal, and thus has high durability at high temperatures.

JP 2004-128357 A

  However, in the low-temperature bonding method described in Patent Document 1, noble metals such as Au (gold) and Ag (silver) are used as metal nanoparticles, and the surface of such metal nanoparticles is modified with an organic substance. Therefore, it becomes very expensive and not practical to apply. In addition, there is a problem that the structure has a structure in which particles are agglomerated, and the organic matter is gasified during the joining process and remains, so that voids exist in the joint, resulting in large variations in joint strength.

  Other high-temperature solders include Au-Ge (germanium) solders and Au-Sn solders that have an Au-based composition, but these also use precious metal Au. It becomes very expensive and is not realistic as described above.

  The present invention has been made in view of the above-described conventional situation. The object of the present invention is to enable bonding with low temperature and excellent high-temperature durability, and at the time of the bonding, An object of the present invention is to provide a semiconductor device manufacturing apparatus capable of appropriately maintaining a creeping insulation distance between electrodes above and below a semiconductor chip while preventing oxidation and securing a sufficient bonding strength. Moreover, it is providing the semiconductor device excellent in the high temperature durability manufactured using said manufacturing apparatus.

  In the semiconductor device manufacturing apparatus according to the present invention, an insert material containing a metal that causes a eutectic reaction with the metal of each bonding surface is interposed between the bonding surface of the semiconductor chip and at least the bonding surface of the wiring metal, Produces a semiconductor device in which irregularities for breaking the oxide film on the bonding surface are provided on at least a part of the bonding surface and the surface of the insert material, and the semiconductor chip and the wiring metal are directly bonded at at least a part of the bonding interface. To do.

  The semiconductor device manufacturing apparatus includes a pressurizing unit that relatively pressurizes the semiconductor chip and the wiring metal, and a heating unit that heats the semiconductor chip and the wiring metal. Further, in the semiconductor device manufacturing apparatus, the pressurizing means is a eutectic discharged from the bonding interface between the semiconductor chip and the wiring metal to the outside of the semiconductor chip, and the pressing body that contacts the main surface of the semiconductor chip or the wiring metal. Suppresses entry of the exhaust into the gap between the pressing part that presses the discharge consisting of the reaction melt and oxide film to a predetermined thickness, and the outer peripheral part of the semiconductor chip and the side part of the pressing part opposite to this. It is characterized by having emission control means.

  A semiconductor device according to the present invention is manufactured using the manufacturing apparatus described above, and includes a semiconductor chip and a wiring metal, and the semiconductor chip and the wiring metal are directly bonded at at least a part of both bonding interfaces. Around the directly joined portion, the eutectic reaction melt and the effluent composed of the oxide film are present in a pressed state with a predetermined thickness.

  In the semiconductor device manufacturing apparatus according to the present invention, the semiconductor chip and the wiring metal are heated while being relatively pressurized by the pressurizing body and the heating means of the pressurizing means via the insert material. As a result, the oxide film on the joint surface is destroyed by the unevenness provided on the joint surface of the wiring metal and the surface of the insert material, and a eutectic reaction is caused between the joint surface and the insert material, which is oxidized at low temperature and low pressure. The film is removed to firmly bond the semiconductor chip and the wiring metal. Here, an aluminum-based metal can be used for the bonding surface of the semiconductor chip or the wiring metal, and the insert material is mainly composed of Zu (zinc), which causes a eutectic reaction with the aluminum-based metal. The metal to be used can be adopted.

  Further, in the above manufacturing apparatus, the eutectic reaction melt generated at the bonding interface between the semiconductor chip and the wiring metal is discharged to the outside of the semiconductor chip as the discharge together with the oxide film, and by the pressing portion of the pressing means, Press the discharge to a predetermined thickness. Therefore, the insert material has a size (volume) that can discharge the eutectic reaction melt and the oxide film generated at the bonding interface to the outside of the semiconductor chip as discharged materials. Ensure that the joint is not in contact with the atmosphere.

  At this time, in the manufacturing apparatus described above, in addition to the pressing of the discharged matter by the pressing portion, the discharged matter suppressing means causes a discharge of the discharged material into the gap between the outer peripheral portion of the semiconductor chip and the side portion of the pressing portion facing the semiconductor chip. By suppressing the intrusion of the portion, the discharge outside the semiconductor chip is made flat, thereby preventing the creeping insulation distance between the electrodes above and below the semiconductor chip from being shortened by the discharge.

  As described above, according to the semiconductor device manufacturing apparatus, it is possible to perform bonding with low temperature and excellent high-temperature durability without using noble metal or Pb, and at the time of bonding, oxidation of the bonded portion is prevented. Thus, it is possible to appropriately maintain the creeping insulation distance between the electrodes on the upper and lower sides of the semiconductor chip while ensuring sufficient bonding strength.

1 is a plan view showing a first embodiment of a semiconductor device manufacturing apparatus according to the present invention. It is sectional drawing of the manufacturing apparatus before the semiconductor device joining based on the AA line in FIG. FIG. 3 is a cross-sectional view showing a state in which the pressure body is in contact with the semiconductor chip following FIG. 2. It is sectional drawing (A) which shows the state which the press part is pressing the discharge following FIG. 3, and the expanded sectional view (B) of the principal part. It is a graph which shows the change of junction surface temperature and pressure in manufacture of a semiconductor device. It is sectional drawing explaining the semiconductor device after manufacture. It is sectional drawing of the principal part which shows 2nd Embodiment of the manufacturing apparatus of a semiconductor device. It is sectional drawing of the principal part which shows 3rd Embodiment of the manufacturing apparatus of a semiconductor device. It is sectional drawing of the principal part which shows 4th Embodiment of the manufacturing apparatus of a semiconductor device.

<First Embodiment>
The semiconductor device manufacturing apparatus shown in FIGS. 1 and 2 manufactures a semiconductor device 1 having a structure described below. In the semiconductor device 1, an insert material 4 containing a metal that causes a eutectic reaction with the metal of each bonding surface is interposed between the bonding surface of the semiconductor chip 2 and at least the bonding surface of the wiring metal 3. Further, the semiconductor device 1 is provided with fine irregularities 5 for breaking the oxide film on the bonding surface on at least a part of the bonding surface and the surface of the insert material 4, and at least a part of the bonding interface with the semiconductor chip 2. In this structure, the wiring metal 3 is directly joined.

  The semiconductor chip 2 in the illustrated example has a square shape in plan view, and has a three-layer structure in which an upper electrode 2B and a lower electrode 2C are provided above and below a substrate 2A, respectively. In the semiconductor chip 2 of this embodiment, at least the lower electrode 2C is made of an aluminum-based metal, and the lower surface of the lower electrode 2C is a joint surface with the wiring metal 3.

  The wiring metal 3 has a square shape that is sufficiently larger than the semiconductor chip 1 in plan view and is made of an aluminum-based alloy. The wiring 5 is formed with unevenness 5 on its upper surface, and the surface of the unevenness 5 is the semiconductor chip. 2 is a joint surface. As long as the unevenness 5 has the function of concentrating stress and promoting the destruction of the oxide film, the shape and number thereof are not limited. For example, the protrusions having a triangular cross section or a trapezoidal cross section are arranged in parallel. In addition, it is possible to employ a structure in which quadrangular pyramidal protrusions are arranged vertically and horizontally.

As the aluminum-based metal that is the material of the lower electrode 2C and the wiring metal 3 of the semiconductor chip 2 described above, a pure aluminum material (industrial pure aluminum) or an alloy material containing 80% or more of Al as a main component is used. it can. A strong oxide film mainly composed of Al ₂ O ₃ is formed on the surfaces of the lower electrode 2C and the wiring metal 3 made of these aluminum-based metals.

  The insert material 4 includes a metal that causes a eutectic reaction with Al. Specifically, the insert material 4 has a metal (pure zinc, zinc alloy) containing Zn (zinc) as a main component, or a eutectic reaction with Zn. Alloys of the resulting metal and Zn, for example, alloys containing Zn and Al as main components, alloys containing Zn and Mg (magnesium) as main components, alloys containing Zn and Cu (copper) as main components, Zn and Sn (tin) ), An alloy mainly composed of Zn and Ag (silver), an alloy mainly composed of Zn, Mg and Al, an alloy mainly composed of Zn, Cu (copper) and Al, and Zn An alloy mainly composed of Sn (tin) and Al, or a thin plate or foil of an alloy mainly composed of Zn, Ag (silver), and Al can be used. In the present invention, the “main component” means that the total content of the metals is 80% or more.

  Further, the insert material 4 has a size (volume) that can be discharged to the outside of the semiconductor chip 1 as a discharge (B) from the eutectic reaction melt and oxide film generated at the bonding interface between the semiconductor chip 2 and the wiring metal 3. It is a plate-shaped member which has. The insert material 4 in the illustrated example has a square shape slightly larger than the semiconductor chip 1 in plan view so as not to bring the joint between the semiconductor chip 2 and the wiring metal 3 into contact with the atmosphere.

  A manufacturing apparatus for manufacturing the semiconductor device 1 includes a pressurizing unit 11 that relatively pressurizes the semiconductor chip 2 and the wiring metal 3, and a heating unit 12 that heats the semiconductor chip 2 and the wiring metal 3. ing.

  The pressurizing unit 11 includes a pressurizing body 13 facing the upper surface side of the semiconductor chip 2, an elevating drive mechanism (not shown) that moves the pressurizing body 13 up and down, and the like. On the other hand, the heating means 12 has a well-known heating source built in a base on which the semiconductor device 1 is placed. As a result, the previous pressurizing unit 11 pressurizes the semiconductor chip 2 and the wiring metal 3 relatively with the heating unit 12.

  In the manufacturing apparatus, the pressurizing unit 11 includes the above-described pressurizing body 13, a pressing portion 14 disposed on the outer peripheral side of the pressurizing body 13, and discharged matter suppressing means (15, 16). The pressing body 13 is in contact with the main surface of the semiconductor chip 1 or the wiring metal 3, and in contact with the upper surface which is the main surface of the semiconductor chip 1 in the illustrated example, pressurizes the pressing body 13. The pressing part 14 presses the discharge (B) made of the eutectic reaction melt and the oxide film discharged from the bonding interface between the semiconductor chip 2 and the wiring metal 3 to the outside of the semiconductor chip 1 to a predetermined thickness. Thus, in the illustrated example, the pressure body 13 is integrated. The pressing portion 14 projects downward from the lower surface of the pressurizing body 13 (contact surface to the semiconductor chip 2), and has a step surface 14 </ b> A as a side portion between the pressing portion 14 and the lower surface of the pressurizing body 13. Yes.

The discharged matter suppressing means allows the discharged matter (B) to enter the gap (S) between the outer peripheral portion of the semiconductor chip 2 and the side portion of the pressing portion 14 (hereinafter referred to as “step surface 14A”) opposite to the outer peripheral portion. It is what suppresses. The discharge suppression means 15 of this embodiment includes a gas supply path 15 that communicates with the gap (S) between the outer peripheral portion of the semiconductor chip 2 and the stepped surface 14A of the pressing portion 14 through the inside of the pressurizing body 13, and pressurization. A gas supply source 16 is provided to supply gas for pressurizing the exhaust gas from the outside of the body 13 to the gas supply path 15. The exhaust pressurizing gas is not particularly limited, but is preferably a gas that does not oxidize each component of the semiconductor chip 2 and is, for example, an inert gas such as nitrogen gas.

  As shown in FIG. 2, the manufacturing apparatus of the semiconductor device 1 having the above-described configuration, when bonding the semiconductor chip 2 to the wiring metal 3, places the bonding surface between the semiconductor chip 2 and at least the bonding surface of the wiring metal 3. The insert material 4 is interposed.

  Next, the manufacturing apparatus lowers the pressurizing body 13 of the pressurizing means 11 and starts pressurizing the semiconductor chip 2 and the wiring metal 3 as shown in FIG. As shown in (), a constant pressure is maintained for a predetermined time. Further, the manufacturing apparatus heats the semiconductor chip 2 and the wiring metal 3 by the heating means 12, and maintains a constant temperature for a predetermined time as shown in FIG. 5 (2). At this time, in the semiconductor device 1, the oxide film formed on the surfaces of the semiconductor chip (lower electrode 2 </ b> C) 2 and the wiring metal 3 made of an aluminum-based metal is broken by the unevenness 5, and the aluminum-based metal and the insert 4 And a eutectic reaction between Al and the metal contained in the insert material 4 occurs at the bonding interface between the semiconductor chip 2 and the wiring metal 3.

  That is, in the semiconductor device 1 described above, stress concentrates on the tips of the irregularities 5 during the manufacturing process, so that the oxide film can be destroyed without damaging the chip with a relatively low applied pressure. Then, the aluminum-based metal and the insert material 4 come into contact with each other through the fracture portion, and the eutectic reaction generated from the contact portion expands to the entire joint surface, so that the oxide film on the joint surface has a low temperature ( Since it is removed at the eutectic temperature), it becomes possible to directly join aluminum-based metals.

  Further, as shown in FIG. 4, the semiconductor device 1 and the manufacturing apparatus described above discharge the eutectic reaction melt together with the oxide film as the discharge B to the outside of the semiconductor chip 2 and at least part of the bonding interface. 2 and the aluminum metal of the wiring metal 3 are joined directly.

  At this time, in the manufacturing apparatus described above, as the pressurizing body 13 reaches the lower limit, the discharge B discharged to the outside of the semiconductor chip 2 is pressed to a predetermined thickness by the pressing portion 14 and discharged. In the object suppressing means, a gas for pressurizing the exhaust is supplied from the gas supply source 16 to the gas supply path 15. As shown in FIG. 4B, this gas is supplied from the gas supply path 15 to the gap S between the outer peripheral portion of the semiconductor chip 2 and the stepped surface 14A of the pressing portion 14, and at this time, the lower end of the gap S Since the portion is blocked by the discharge B, the state is confined in the gap S. Thereby, the emission control means maintains the pressure of the supplied gas, and suppresses a part of the emission B from entering the gap S by the pressure. Thereafter, as shown in FIG. 5 (3), the manufacturing apparatus finishes the pressurization by the pressurizing means 11 and the heating by the heating means 12, and the gas supply is also terminated.

  As shown in FIG. 6, the semiconductor device 1 manufactured as described above includes a semiconductor chip 2 and a wiring metal 3, and the semiconductor chip 2 and the wiring metal 3 are directly bonded at at least a part of both bonding interfaces. In the periphery of the direct joint, the discharge B composed of the eutectic reaction melt and the oxide film is present in a pressed state with a predetermined thickness.

  In the manufacturing apparatus of the semiconductor device 1 according to the present invention, the semiconductor chip 2 and the wiring metal 3 are heated while being relatively pressed through the insert material 4, thereby destroying the oxide film due to the unevenness 5, the bonding surface, and the insert material. 4 is generated, and the semiconductor chip 2 and the wiring metal 3 are firmly bonded at low temperature and low pressure. At this time, in the manufacturing apparatus described above, an aluminum-based metal is used for the joining surface of the semiconductor chip 2 and the wiring metal 3, and a metal whose main component is Zu is used for the insert material 4. Without using Pb and Pb, it is possible to perform bonding with low temperature and excellent high-temperature durability.

  Moreover, in said manufacturing apparatus, while the discharge part B is pressed to predetermined thickness by the press part 14, the level | step difference surface of the outer peripheral part of the semiconductor chip 2 and the press part 14 by discharge | emission suppression means (15, 16). Since a part of the discharge B enters the gap S with respect to 14A, the discharge B on the outside of the semiconductor chip 2 becomes flat without burrs, and the electrodes above and below the semiconductor chip 2 The creeping insulation distance R (see FIG. 6) between 2B and 2C is prevented from being shortened by the discharge B.

  In this way, according to the manufacturing apparatus of the semiconductor device 1, it is possible to perform bonding with low temperature and excellent high-temperature durability without using noble metal or Pb, and at the time of bonding, oxidation of the bonding portion is possible. The creeping insulation distance R between the electrodes 2B and 2C on the upper and lower sides of the semiconductor chip 2 can be appropriately maintained while preventing and securing sufficient bonding strength.

  When the semiconductor chip 2 and the wiring metal 3 are bonded using the insert material 4 as described above, a gap is formed between the semiconductor chip 2 and the wiring metal 3 if the supply of the insert material 4 is small. There is a risk that the air shielding inside becomes insufficient, the joint is oxidized, and the joint strength is lowered. On the other hand, when the supply of the insert material 4 is large, the discharged material B protrudes so as to approach the upper surface of the semiconductor chip 2 outside the semiconductor chip 2. As a result, the creeping insulation distance R between the upper and lower electrodes 2B and 2C of the semiconductor chip 2 is reduced via the discharge B. This decrease in the creeping insulation distance R is not preferable for preventing a short circuit between the electrodes.

  On the other hand, since the semiconductor device 1 manufactured using the above-described manufacturing apparatus is sufficiently supplied with the insert material 4, the air is sufficiently blocked during the bonding of the semiconductor chip 2 and the wiring metal 3, Sufficient joint strength is ensured by preventing the oxidation of the joint. Further, since the discharge B outside the semiconductor chip 2 is flattened by the pressing portion 14 and the discharge suppression means (15, 16), the distance between the upper electrode 2B of the semiconductor chip 2 and the discharge B is shortened. In addition, the creeping insulation distance R is appropriately maintained, and a short circuit between the upper and lower electrodes 2B and 2C is prevented.

  The second to third embodiments of the semiconductor device manufacturing apparatus according to the present invention will be described below with reference to FIGS. In the following embodiments, the same components as those in the first embodiment are denoted by the same reference numerals, and detailed description thereof is omitted.

Second Embodiment
In the manufacturing apparatus of the semiconductor device 1 shown in FIG. 7, the discharged matter suppressing means is a surface treatment portion 14 </ b> B that is formed at least on the side portion (step surface 14 </ b> A) of the pressing portion 14 and has low wettability with respect to the discharged matter B. The surface treatment portion 14B in the illustrated example is formed in a range from the stepped surface 14A of the pressing portion 14 to the bottom surface of the pressing body 13 (contact surface with the semiconductor chip 2) as indicated by a dotted line. This surface treatment part 14B can be formed by roughening as an example.

  When the semiconductor chip 2 and the wiring metal 3 are pressurized by the lowering of the pressurizing body 13, the manufacturing apparatus of the semiconductor device 1 having the above-described configuration starts from the bonding interface between the semiconductor chip 2 and the wiring metal 3. Exhaust B is discharged outside. At this time, the manufacturing apparatus presses the discharge B to a predetermined thickness by the pressing portion 14, but has a surface treatment portion 14 B with low wettability of the discharge B on the side of the pressing portion 14. Is less likely to enter the gap S between the semiconductor chip 2 and the pressing portion 14, and as a result, the discharge B on the outside of the semiconductor chip 2 is formed in a flat shape free from burrs and the like.

  As a result, the semiconductor device 1 can appropriately maintain the creeping insulation distance (symbol R in FIG. 6) between the upper and lower electrodes 2B and 2C of the semiconductor chip 2, and can prevent a short circuit between the upper and lower electrodes 2B and 2C. It becomes. Moreover, if the surface treatment part 14B is formed by the roughening treatment as in the above embodiment, the surface treatment part 14B having low wettability with respect to the discharged matter B can be obtained at a low cost by a relatively simple means. In addition, the entry of the discharge B into the gap S can be further suppressed by the pinning effect due to the roughening.

  The pinning effect described above is that when fluid such as the discharged matter B comes into contact with the surface of a substance having a large contact angle (roughened surface treatment portion 14B), contact on the surface is achieved. It is a phenomenon that does not proceed until it reaches the corner.

<Third Embodiment>
In the manufacturing apparatus of the semiconductor device 1 shown in FIG. 8, the emission suppressing means is formed on the side portion of the pressing portion 14 and has an inclined surface 14 </ b> C that forms an angle θ <b> 1 with respect to the surface (bottom surface) of the pressing portion 14. It is. That is, in the pressing portion 14 of this embodiment, the step surface (14A) in the pressurizing body 13 is an inclined surface 14C.

  When the semiconductor chip 2 and the wiring metal 3 are pressurized by the lowering of the pressurizing body 13, the manufacturing apparatus of the semiconductor device 1 having the above-described configuration starts from the bonding interface between the semiconductor chip 2 and the wiring metal 3. Exhaust B is discharged outside. At this time, the manufacturing apparatus presses the discharge B to a predetermined thickness by the pressing portion 14, but the inclined surface 14C is provided on the side portion of the pressing portion 14, and the surface of the pressing portion 14 and the inclined surface 14C are provided. Because of the pin angle, due to the pinning effect, it becomes difficult for a part of the discharge B to enter the gap S between the semiconductor chip 2 and the pressing portion 14, and as a result, the discharge B outside the semiconductor chip 2. Is formed in a flat shape without burrs or the like.

  In addition, the pinning effect in this embodiment is the surface (pressing part 14) which has moved so far when a fluid such as the discharge B moves and reaches a curved surface (inclined surface 14C). This is a phenomenon in which it cannot proceed further until a contact angle larger than the contact angle on the surface) is reached.

  As a result, the semiconductor device 1 can appropriately maintain the creeping insulation distance (symbol R in FIG. 6) between the upper and lower electrodes 2B and 2C of the semiconductor chip 2, and can prevent a short circuit between the upper and lower electrodes 2B and 2C. It becomes. Moreover, if the inclined surface 14C is employed as in the above embodiment, the emission control means can be realized with a relatively simple structure.

<Fourth embodiment>
In the manufacturing apparatus of the semiconductor device 1 shown in FIG. 8, the emission suppressing means is a chamfered inclined surface 14 </ b> D formed on the outer peripheral side of the pressing portion 14. That is, the pressing portion 14 of this embodiment has a structure in which the course of the discharge B is expanded with respect to the discharge direction of the discharge B or the discharge B by the inclined surface 14D having an angle θ2 of less than 90 degrees with respect to the horizontal plane. It has a structure that lets you escape.

  When the semiconductor chip 2 and the wiring metal 3 are pressurized by the lowering of the pressurizing body 13, the manufacturing apparatus of the semiconductor device 1 having the above-described configuration starts from the bonding interface between the semiconductor chip 2 and the wiring metal 3. Exhaust B is discharged outside. At this time, the manufacturing apparatus presses the discharge B to a predetermined thickness by the pressing portion 14, but has a chamfered inclined surface 14D on the outer peripheral side of the pressing portion 14, so that the flow resistance of the discharge B decreases. Thus, the flow is promoted to the inclined surface 14D side. Thereby, in the manufacturing apparatus, it becomes difficult for a part of the discharge B to enter the gap S between the semiconductor chip 2 and the pressing portion 14. As a result, as shown in FIG. 8, the discharge B is thick at the inclined surface 14 </ b> D, but is formed in a thin shape without burrs at the portion close to the semiconductor chip 2.

  In this manner, the semiconductor device 1 appropriately maintains the creeping insulation distance (the symbol R in FIG. 6) between the upper and lower electrodes 2B and 2C of the semiconductor chip 2, and prevents a short circuit between the upper and lower electrodes 2B and 2C. To get. Moreover, if the chamfered inclined surface 14D is employed as in the above embodiment, the emission control means can be realized with a relatively simple structure. In the structure of this embodiment, for example, it is also effective to subject the inclined surface 14D to a surface treatment with high wettability with respect to the discharge B. Thereby, the flow of the discharge B to the inclined surface 14D side can be further promoted.

  The semiconductor device manufacturing apparatus according to the present invention is not limited to the above embodiments, and the details of the material, shape, number, and the like of each component are appropriately selected without departing from the scope of the present invention. It is possible to change.

  In the semiconductor device manufacturing apparatus of the present invention, for example, the pressing portion 14 in the pressing means 11 can be separated from the pressing body 13, but as described in each embodiment, the pressing body 14 If the pressing unit 14 is integrated with the unit 13, the structure of the apparatus can be simplified and the manufacturing cost can be reduced. Further, the manufacturing apparatus appropriately selects and combines the emission control means described in the first to fourth embodiments, that is, the gas supply path 15 and the gas supply source 16, the surface treatment unit 14B, and the inclined surfaces 14C and 14D. be able to.

DESCRIPTION OF SYMBOLS 1 Semiconductor device 2 Semiconductor chip 2B Upper electrode 2C Lower electrode 3 Wiring metal 4 Insert material 5 Concavity and convexity 11 Pressure means
DESCRIPTION OF SYMBOLS 12 Heating means 13 Pressurization body 14 Press part 14A Step surface 14B Surface treatment part (exhaust matter suppression means)
14C inclined surface (exhaust control means)
14D inclined surface (exhaust control means)
15 Gas supply path (exhaust control means)
16 Gas supply source (exhaust control means)
B Emission R Creeping insulation distance

Claims (9)

An unevenness for interposing an insert material containing a metal that causes a eutectic reaction with the metal of each bonding surface between the bonding surface of the semiconductor chip and at least the bonding surface of the wiring metal and destroying the oxide film on the bonding surface Is provided on at least a part of the bonding surface and the surface of the insert material, and a manufacturing apparatus for manufacturing a semiconductor device formed by directly bonding a semiconductor chip and a wiring metal at at least a part of the bonding interface,
Pressurizing means for relatively pressurizing the semiconductor chip and the wiring metal;
A heating means for heating the semiconductor chip and the wiring metal,
Pressurizing means
A pressure member that contacts the main surface of the semiconductor chip or wiring metal;
A pressing portion for pressing the eutectic reaction melt discharged from the bonding interface between the semiconductor chip and the wiring metal to the outside of the semiconductor chip and the discharge formed of the oxide film to a predetermined thickness;
An apparatus for manufacturing a semiconductor device, comprising: an emission suppressing means for suppressing the entry of an emission into a gap between an outer peripheral portion of a semiconductor chip and a side portion of a pressing portion opposed to the outer peripheral portion.   The semiconductor chip includes an aluminum-based metal on a bonding surface, the wiring metal includes at least an aluminum-based metal on the bonding surface, and the insert material is a metal mainly composed of Zn. The manufacturing apparatus of the semiconductor device of description.   3. The semiconductor device manufacturing apparatus according to claim 1, wherein in the pressurizing means, a pressing portion is integrated with the pressurizing body. The exhaust emission control means passes a gas supply passage communicating with the gap between the outer peripheral portion of the semiconductor chip and the side of the pressing portion through the pressurizer, and gas for pressurizing the exhaust from the outside of the pressurizer to the gas supply passage. The apparatus for manufacturing a semiconductor device according to claim 1, further comprising a gas supply source to supply.
  5. The semiconductor device according to claim 1, wherein the emission control unit is a surface treatment unit that is formed at least on a side of the pressing unit and has low wettability with respect to the emission. manufacturing device.   The semiconductor device manufacturing apparatus according to claim 5, wherein the surface treatment portion is formed by a roughening treatment. An inclined surface that forms an angle of less than 90 degrees with respect to the bottom surface of the pressing portion so that the discharge suppression means is formed on the side portion of the pressing portion and the width of the gap widens from the bottom surface of the pressing portion toward the upper side. The semiconductor device manufacturing apparatus according to claim 1, wherein the apparatus is a semiconductor device manufacturing apparatus.
  The apparatus for manufacturing a semiconductor device according to claim 1, wherein the discharge suppression means is a chamfered inclined surface formed on an outer peripheral side of the pressing portion. A semiconductor device manufactured using the manufacturing apparatus according to claim 1 , wherein the semiconductor device includes a semiconductor chip and a wiring metal, and the semiconductor chip and the wiring metal are at least a part of a bonding interface between the two. The semiconductor device is characterized in that a discharge formed of a eutectic reaction melt and an oxide film is present in a state of being pressed to a predetermined thickness around the direct bonding portion.

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