JP6259508B1 - ハーフトーンマスク、フォトマスクブランクス及びハーフトーンマスクの製造方法 - Google Patents

ハーフトーンマスク、フォトマスクブランクス及びハーフトーンマスクの製造方法 Download PDF

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Publication number
JP6259508B1
JP6259508B1 JP2016256534A JP2016256534A JP6259508B1 JP 6259508 B1 JP6259508 B1 JP 6259508B1 JP 2016256534 A JP2016256534 A JP 2016256534A JP 2016256534 A JP2016256534 A JP 2016256534A JP 6259508 B1 JP6259508 B1 JP 6259508B1
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Japan
Prior art keywords
film
phase shift
semi
etching
transmissive
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JP2016256534A
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Japanese (ja)
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JP2018109671A (ja
Inventor
慎吾 山田
慎吾 山田
久美子 森山
久美子 森山
昌宏 美作
昌宏 美作
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SK Electronics Co Ltd
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SK Electronics Co Ltd
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Priority to JP2016256534A priority Critical patent/JP6259508B1/ja
Priority to KR1020197010544A priority patent/KR102193360B1/ko
Priority to PCT/JP2017/046369 priority patent/WO2018123939A1/ja
Priority to CN201780070660.9A priority patent/CN109983402B/zh
Priority to TW106145937A priority patent/TWI641902B/zh
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Publication of JP6259508B1 publication Critical patent/JP6259508B1/ja
Publication of JP2018109671A publication Critical patent/JP2018109671A/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
JP2016256534A 2016-12-28 2016-12-28 ハーフトーンマスク、フォトマスクブランクス及びハーフトーンマスクの製造方法 Active JP6259508B1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2016256534A JP6259508B1 (ja) 2016-12-28 2016-12-28 ハーフトーンマスク、フォトマスクブランクス及びハーフトーンマスクの製造方法
KR1020197010544A KR102193360B1 (ko) 2016-12-28 2017-12-25 하프톤 마스크, 포토마스크 블랭크스 및 하프톤 마스크의 제조방법
PCT/JP2017/046369 WO2018123939A1 (ja) 2016-12-28 2017-12-25 ハーフトーンマスク、フォトマスクブランクス及びハーフトーンマスクの製造方法
CN201780070660.9A CN109983402B (zh) 2016-12-28 2017-12-25 半色调掩模、光掩模坯和半色调掩模的制造方法
TW106145937A TWI641902B (zh) 2016-12-28 2017-12-27 半色調光罩、光罩坯料、及半色調光罩的製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016256534A JP6259508B1 (ja) 2016-12-28 2016-12-28 ハーフトーンマスク、フォトマスクブランクス及びハーフトーンマスクの製造方法

Publications (2)

Publication Number Publication Date
JP6259508B1 true JP6259508B1 (ja) 2018-01-10
JP2018109671A JP2018109671A (ja) 2018-07-12

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JP2016256534A Active JP6259508B1 (ja) 2016-12-28 2016-12-28 ハーフトーンマスク、フォトマスクブランクス及びハーフトーンマスクの製造方法

Country Status (5)

Country Link
JP (1) JP6259508B1 (zh)
KR (1) KR102193360B1 (zh)
CN (1) CN109983402B (zh)
TW (1) TWI641902B (zh)
WO (1) WO2018123939A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109071656B (zh) 2017-01-05 2021-05-18 璟尚生物制药公司 检查点调节物拮抗剂
JP6756796B2 (ja) * 2018-10-09 2020-09-16 アルバック成膜株式会社 マスクブランクス、ハーフトーンマスク、製造方法

Citations (4)

* Cited by examiner, † Cited by third party
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JP2005165352A (ja) * 2005-01-14 2005-06-23 Sony Corp フォトリソグラフィ用マスク、薄膜形成方法、並びに液晶表示装置及び液晶表示装置の製造方法
JP2013068967A (ja) * 2012-12-12 2013-04-18 Hoya Corp 多階調フォトマスク、パターン転写方法及び薄膜トランジスタの製造方法
JP2016021075A (ja) * 2014-03-18 2016-02-04 Hoya株式会社 マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法
JP2017062462A (ja) * 2015-09-26 2017-03-30 Hoya株式会社 フォトマスクの製造方法、フォトマスク、及び表示装置の製造方法

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JPH05249652A (ja) * 1992-03-06 1993-09-28 Fujitsu Ltd 位相シフトマスクおよびその製造方法
JPH07134389A (ja) * 1993-06-25 1995-05-23 Hoya Corp 位相シフトマスクブランクの製造方法及び位相シフトマスクの製造方法
KR0139689B1 (ko) * 1995-07-06 1998-07-01 구자홍 씨로코팬의 블레이드
KR100546269B1 (ko) * 1998-03-03 2006-04-21 삼성전자주식회사 하프톤 위상반전마스크 및 그 제조방법
JP2002023341A (ja) * 2000-07-11 2002-01-23 Shin Etsu Chem Co Ltd 位相シフト型フォトマスクブランクス及び位相シフト型フォトマスク
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JP2007033753A (ja) 2005-07-26 2007-02-08 Toppan Printing Co Ltd 自己整合型位相シフトマスク及びその製造方法
JP5510947B2 (ja) * 2008-09-19 2014-06-04 Ｈｏｙａ株式会社 フォトマスクの製造方法およびフォトマスク
JP5588633B2 (ja) 2009-06-30 2014-09-10 アルバック成膜株式会社 位相シフトマスクの製造方法、フラットパネルディスプレイの製造方法及び位相シフトマスク
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JP2011227391A (ja) 2010-04-22 2011-11-10 Toppan Printing Co Ltd 液晶表示装置製造用ハーフトーンマスクブランクス、ハーフトーンマスクおよびハーフトーンマスク製造方法
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JP6522277B2 (ja) * 2013-11-19 2019-05-29 Hoya株式会社 フォトマスク、フォトマスクの製造方法、パターン転写方法及び表示装置の製造方法
JP2015212720A (ja) 2014-05-01 2015-11-26 Hoya株式会社 多階調フォトマスクの製造方法、多階調フォトマスク及び表示装置の製造方法
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JP2005165352A (ja) * 2005-01-14 2005-06-23 Sony Corp フォトリソグラフィ用マスク、薄膜形成方法、並びに液晶表示装置及び液晶表示装置の製造方法
JP2013068967A (ja) * 2012-12-12 2013-04-18 Hoya Corp 多階調フォトマスク、パターン転写方法及び薄膜トランジスタの製造方法
JP2016021075A (ja) * 2014-03-18 2016-02-04 Hoya株式会社 マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法
JP2017062462A (ja) * 2015-09-26 2017-03-30 Hoya株式会社 フォトマスクの製造方法、フォトマスク、及び表示装置の製造方法

Also Published As

Publication number Publication date
KR102193360B1 (ko) 2020-12-21
CN109983402A (zh) 2019-07-05
JP2018109671A (ja) 2018-07-12
CN109983402B (zh) 2022-04-22
KR20190047032A (ko) 2019-05-07
TW201831984A (zh) 2018-09-01
WO2018123939A1 (ja) 2018-07-05
TWI641902B (zh) 2018-11-21

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