JP6250657B2 - 均一な線形強度プロファイルのためのレーザモジュール - Google Patents

均一な線形強度プロファイルのためのレーザモジュール Download PDF

Info

Publication number
JP6250657B2
JP6250657B2 JP2015519442A JP2015519442A JP6250657B2 JP 6250657 B2 JP6250657 B2 JP 6250657B2 JP 2015519442 A JP2015519442 A JP 2015519442A JP 2015519442 A JP2015519442 A JP 2015519442A JP 6250657 B2 JP6250657 B2 JP 6250657B2
Authority
JP
Japan
Prior art keywords
laser
axis
area
laser module
submodule
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2015519442A
Other languages
English (en)
Japanese (ja)
Other versions
JP2015524609A5 (enExample
JP2015524609A (ja
Inventor
ステファン グロネンボーン
ステファン グロネンボーン
ジェンス ポルマン−レッチェ
ジェンス ポルマン−レッチェ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips NV filed Critical Koninklijke Philips NV
Publication of JP2015524609A publication Critical patent/JP2015524609A/ja
Publication of JP2015524609A5 publication Critical patent/JP2015524609A5/ja
Application granted granted Critical
Publication of JP6250657B2 publication Critical patent/JP6250657B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H01S5/02326—Arrangements for relative positioning of laser diodes and optical components, e.g. grooves in the mount to fix optical fibres or lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H01S5/426—Vertically stacked cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
    • H01S5/1835—Non-circular mesa
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Laser Beam Processing (AREA)
JP2015519442A 2012-06-26 2013-06-26 均一な線形強度プロファイルのためのレーザモジュール Active JP6250657B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261664218P 2012-06-26 2012-06-26
US61/664,218 2012-06-26
PCT/IB2013/055241 WO2014002024A1 (en) 2012-06-26 2013-06-26 Laser module for homogeneous line-shaped intensity profiles

Publications (3)

Publication Number Publication Date
JP2015524609A JP2015524609A (ja) 2015-08-24
JP2015524609A5 JP2015524609A5 (enExample) 2016-08-12
JP6250657B2 true JP6250657B2 (ja) 2017-12-20

Family

ID=49223798

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015519442A Active JP6250657B2 (ja) 2012-06-26 2013-06-26 均一な線形強度プロファイルのためのレーザモジュール

Country Status (7)

Country Link
US (1) US9147996B2 (enExample)
EP (1) EP2865056B1 (enExample)
JP (1) JP6250657B2 (enExample)
CN (1) CN104396101B (enExample)
BR (1) BR112014032068A2 (enExample)
RU (1) RU2633310C2 (enExample)
WO (1) WO2014002024A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6395955B2 (ja) * 2015-12-25 2018-09-26 鴻海精密工業股▲ふん▼有限公司 ラインビーム光源およびラインビーム照射装置ならびにレーザリフトオフ方法
CN107153198A (zh) * 2017-03-16 2017-09-12 深圳市速腾聚创科技有限公司 激光雷达和激光雷达控制方法
CN110770986A (zh) * 2017-04-05 2020-02-07 维克萨股份有限公司 显示器的vcsel的新型图案化、感测和成像
CN115377802A (zh) * 2022-08-18 2022-11-22 西安炬光科技股份有限公司 线光斑光源发射装置和设备

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0647954A (ja) * 1992-07-29 1994-02-22 Dainippon Screen Mfg Co Ltd 光源ユニット
EP0925546B1 (en) 1996-09-11 2000-12-13 The Domino Corporation Laser apparatus
US6084848A (en) * 1996-11-11 2000-07-04 Kabushiki Kaisha Toshiba Two-dimensional near field optical memory head
US6304588B1 (en) * 1997-02-07 2001-10-16 Xerox Corporation Method and structure for eliminating polarization instability in laterally-oxidized VCSELs
JP3463498B2 (ja) * 1997-02-14 2003-11-05 富士ゼロックス株式会社 チップアレイおよびこれを用いた画像形成装置
RU2163048C1 (ru) * 2000-01-24 2001-02-10 РЕЙТЭК Лазер Индастрис Лтд. Источник излучения на основе лазерных диодов
US6552853B2 (en) * 2000-12-22 2003-04-22 Polaroid Corporation Radiation beam combiner
DE10111871A1 (de) 2001-03-13 2002-09-19 Heidelberger Druckmasch Ag Bebilderungseinrichtung für eine Druckform mit einem Array von VCSEL-Lichtquellen
JP4171603B2 (ja) * 2002-03-04 2008-10-22 株式会社リコー 画像形成装置
US7002613B2 (en) 2002-09-06 2006-02-21 Heidelberger Druckmaschinen Ag Method for printing an image on a printing substrate and device for inputting energy to a printing-ink carrier
WO2005114979A2 (en) 2004-05-19 2005-12-01 Intense Limited Thermal printing with laser activation
JP4687050B2 (ja) * 2004-09-24 2011-05-25 富士ゼロックス株式会社 フラッシュ定着装置及びこれを用いた画像形成装置
US7672634B2 (en) * 2004-11-30 2010-03-02 Xerox Corporation Addressable fusing for an integrated printing system
US7515346B2 (en) * 2006-07-18 2009-04-07 Coherent, Inc. High power and high brightness diode-laser array for material processing applications
US20090059255A1 (en) 2007-09-05 2009-03-05 Toshio Ohide Image processing apparatus, image forming apparatus, and image processing method
US20100253769A1 (en) * 2008-09-04 2010-10-07 Laser Light Engines Optical System and Assembly Method
DE102009021251A1 (de) * 2009-05-14 2010-11-18 Limo Patentverwaltung Gmbh & Co. Kg Vorrichtung zur Formung von Laserstrahlung sowie Laservorrichtung mit einer derartigen Vorrichtung
KR101733422B1 (ko) 2009-08-20 2017-05-10 코닌클리케 필립스 엔.브이. 구성 가능한 강도 분포를 갖는 레이저 장치
JP5834685B2 (ja) * 2011-09-21 2015-12-24 富士ゼロックス株式会社 定着装置及び画像形成装置

Also Published As

Publication number Publication date
RU2633310C2 (ru) 2017-10-11
JP2015524609A (ja) 2015-08-24
US9147996B2 (en) 2015-09-29
EP2865056B1 (en) 2025-08-06
RU2015101988A (ru) 2016-08-10
CN104396101B (zh) 2017-07-11
BR112014032068A2 (pt) 2017-06-27
EP2865056A1 (en) 2015-04-29
US20150155685A1 (en) 2015-06-04
WO2014002024A1 (en) 2014-01-03
CN104396101A (zh) 2015-03-04

Similar Documents

Publication Publication Date Title
CN109863445B (zh) 用于从二极管激光器阵列生成线光束的装置
US6888679B2 (en) Laser diode bar integrator/reimager
KR101733422B1 (ko) 구성 가능한 강도 분포를 갖는 레이저 장치
JP5268437B2 (ja) 光源
JP4980329B2 (ja) 少なくとも１つの高出力ダイオードレーザを含む高出力レーザダイオードアレイ、及びそれを含むレーザ光源
JP5963858B2 (ja) 光電子モジュール、光電子装置及び方法
US8547641B2 (en) Line-projection apparatus for arrays of diode-laser bar stacks
JP6250657B2 (ja) 均一な線形強度プロファイルのためのレーザモジュール
JP2024522080A (ja) 単一要素ドットパターンプロジェクタ
KR20160002739A (ko) 선형 세기 분포를 갖는 레이저 방사선의 생성 장치
JP7277614B2 (ja) Ｖｃｓｅｌベースのパターンプロジェクタ
JP2015524609A5 (enExample)
CN116457135A (zh) 用于在工作平面上生成限定的激光照射的设备
JP7369210B2 (ja) マイクロレンズアレイ及び発光装置
JP6720502B2 (ja) レーザ装置の製造方法
KR102833274B1 (ko) 레이저 방사선용 변환 기기
CN112513706A (zh) 用于激光辐射的转变设备

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160623

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20160623

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20170413

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20170508

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170807

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20171024

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20171122

R150 Certificate of patent or registration of utility model

Ref document number: 6250657

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350