RU2633310C2 - Лазерный модуль для однородных линейных профилей интенсивности - Google Patents

Лазерный модуль для однородных линейных профилей интенсивности Download PDF

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Publication number
RU2633310C2
RU2633310C2 RU2015101988A RU2015101988A RU2633310C2 RU 2633310 C2 RU2633310 C2 RU 2633310C2 RU 2015101988 A RU2015101988 A RU 2015101988A RU 2015101988 A RU2015101988 A RU 2015101988A RU 2633310 C2 RU2633310 C2 RU 2633310C2
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RU
Russia
Prior art keywords
laser
submodules
axis
regions
semiconductor lasers
Prior art date
Application number
RU2015101988A
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English (en)
Russian (ru)
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RU2015101988A (ru
Inventor
Стефан ГРОНЕНБОРН
Йенс ПОЛЛМАНН-РЕЧ
Original Assignee
Конинклейке Филипс Н.В.
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Publication of RU2015101988A publication Critical patent/RU2015101988A/ru
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H01S5/02326—Arrangements for relative positioning of laser diodes and optical components, e.g. grooves in the mount to fix optical fibres or lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H01S5/426—Vertically stacked cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
    • H01S5/1835—Non-circular mesa
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Laser Beam Processing (AREA)
RU2015101988A 2012-06-26 2013-06-26 Лазерный модуль для однородных линейных профилей интенсивности RU2633310C2 (ru)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261664218P 2012-06-26 2012-06-26
US61/664,218 2012-06-26
PCT/IB2013/055241 WO2014002024A1 (en) 2012-06-26 2013-06-26 Laser module for homogeneous line-shaped intensity profiles

Publications (2)

Publication Number Publication Date
RU2015101988A RU2015101988A (ru) 2016-08-10
RU2633310C2 true RU2633310C2 (ru) 2017-10-11

Family

ID=49223798

Family Applications (1)

Application Number Title Priority Date Filing Date
RU2015101988A RU2633310C2 (ru) 2012-06-26 2013-06-26 Лазерный модуль для однородных линейных профилей интенсивности

Country Status (7)

Country Link
US (1) US9147996B2 (enExample)
EP (1) EP2865056B1 (enExample)
JP (1) JP6250657B2 (enExample)
CN (1) CN104396101B (enExample)
BR (1) BR112014032068A2 (enExample)
RU (1) RU2633310C2 (enExample)
WO (1) WO2014002024A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6395955B2 (ja) * 2015-12-25 2018-09-26 鴻海精密工業股▲ふん▼有限公司 ラインビーム光源およびラインビーム照射装置ならびにレーザリフトオフ方法
CN107153198A (zh) * 2017-03-16 2017-09-12 深圳市速腾聚创科技有限公司 激光雷达和激光雷达控制方法
CN110770986A (zh) * 2017-04-05 2020-02-07 维克萨股份有限公司 显示器的vcsel的新型图案化、感测和成像
CN115377802A (zh) * 2022-08-18 2022-11-22 西安炬光科技股份有限公司 线光斑光源发射装置和设备

Citations (5)

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US6084848A (en) * 1996-11-11 2000-07-04 Kabushiki Kaisha Toshiba Two-dimensional near field optical memory head
RU2163048C1 (ru) * 2000-01-24 2001-02-10 РЕЙТЭК Лазер Индастрис Лтд. Источник излучения на основе лазерных диодов
US6552853B2 (en) * 2000-12-22 2003-04-22 Polaroid Corporation Radiation beam combiner
US7596161B2 (en) * 1997-02-07 2009-09-29 Xerox Corporation Laterally oxidized vertical cavity surface emitting lasers
US20100253769A1 (en) * 2008-09-04 2010-10-07 Laser Light Engines Optical System and Assembly Method

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JPH0647954A (ja) * 1992-07-29 1994-02-22 Dainippon Screen Mfg Co Ltd 光源ユニット
EP0925546B1 (en) 1996-09-11 2000-12-13 The Domino Corporation Laser apparatus
JP3463498B2 (ja) * 1997-02-14 2003-11-05 富士ゼロックス株式会社 チップアレイおよびこれを用いた画像形成装置
DE10111871A1 (de) 2001-03-13 2002-09-19 Heidelberger Druckmasch Ag Bebilderungseinrichtung für eine Druckform mit einem Array von VCSEL-Lichtquellen
JP4171603B2 (ja) * 2002-03-04 2008-10-22 株式会社リコー 画像形成装置
US7002613B2 (en) 2002-09-06 2006-02-21 Heidelberger Druckmaschinen Ag Method for printing an image on a printing substrate and device for inputting energy to a printing-ink carrier
WO2005114979A2 (en) 2004-05-19 2005-12-01 Intense Limited Thermal printing with laser activation
JP4687050B2 (ja) * 2004-09-24 2011-05-25 富士ゼロックス株式会社 フラッシュ定着装置及びこれを用いた画像形成装置
US7672634B2 (en) * 2004-11-30 2010-03-02 Xerox Corporation Addressable fusing for an integrated printing system
US7515346B2 (en) * 2006-07-18 2009-04-07 Coherent, Inc. High power and high brightness diode-laser array for material processing applications
US20090059255A1 (en) 2007-09-05 2009-03-05 Toshio Ohide Image processing apparatus, image forming apparatus, and image processing method
DE102009021251A1 (de) * 2009-05-14 2010-11-18 Limo Patentverwaltung Gmbh & Co. Kg Vorrichtung zur Formung von Laserstrahlung sowie Laservorrichtung mit einer derartigen Vorrichtung
KR101733422B1 (ko) 2009-08-20 2017-05-10 코닌클리케 필립스 엔.브이. 구성 가능한 강도 분포를 갖는 레이저 장치
JP5834685B2 (ja) * 2011-09-21 2015-12-24 富士ゼロックス株式会社 定着装置及び画像形成装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6084848A (en) * 1996-11-11 2000-07-04 Kabushiki Kaisha Toshiba Two-dimensional near field optical memory head
US7596161B2 (en) * 1997-02-07 2009-09-29 Xerox Corporation Laterally oxidized vertical cavity surface emitting lasers
RU2163048C1 (ru) * 2000-01-24 2001-02-10 РЕЙТЭК Лазер Индастрис Лтд. Источник излучения на основе лазерных диодов
US6552853B2 (en) * 2000-12-22 2003-04-22 Polaroid Corporation Radiation beam combiner
US20100253769A1 (en) * 2008-09-04 2010-10-07 Laser Light Engines Optical System and Assembly Method

Also Published As

Publication number Publication date
JP2015524609A (ja) 2015-08-24
US9147996B2 (en) 2015-09-29
EP2865056B1 (en) 2025-08-06
RU2015101988A (ru) 2016-08-10
CN104396101B (zh) 2017-07-11
BR112014032068A2 (pt) 2017-06-27
JP6250657B2 (ja) 2017-12-20
EP2865056A1 (en) 2015-04-29
US20150155685A1 (en) 2015-06-04
WO2014002024A1 (en) 2014-01-03
CN104396101A (zh) 2015-03-04

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Effective date: 20200627