JP6246673B2 - Measuring apparatus, substrate processing system, and measuring method - Google Patents

Description

  Embodiments disclosed herein relate to a measurement apparatus, a substrate processing system, and a measurement method.

  In recent years, for example, in the manufacture of an FPD (Flat Panel Display), a pattern is formed on a substrate by a photolithography process. In the photolithography process described above, after a predetermined film is formed on a target substrate such as a glass substrate, a resist is applied, and the resist film formed on the substrate is exposed to a predetermined pattern shape using a mask. . Thereafter, the exposed substrate is immersed in a developing solution to perform a development process, whereby a pattern is formed on the substrate.

  By the way, an apparatus for measuring the line width of a pattern has been proposed for a substrate pattern formed as described above. For example, Patent Document 1 discloses a technique for measuring a line width of a substrate pattern in a state where an adsorption plate that adsorbs a substrate is placed on a stone surface plate and the substrate is placed and fixed on the adsorption plate. It is disclosed.

JP 2008-140816 A

  However, in the above-described prior art, since the stone surface plate is made of marble or the like, the weight of the entire line width measuring apparatus is increased and the apparatus may be expensive.

  An object of one embodiment is to provide an inexpensive measurement apparatus, substrate processing system, and measurement method that can be reduced in weight.

A measurement device according to an aspect of the embodiment includes a transport unit, an imaging unit, a measurement unit, and a height measurement unit . The transport unit transports the substrate on which the pattern is formed. An imaging part is arrange | positioned above the said conveyance part, and images the pattern of the said board | substrate mounted in the said conveyance part. The measurement unit measures the shape of the pattern based on image information of the pattern imaged by the imaging unit. The height measuring unit measures the height from the imaging unit to the substrate a plurality of times. Then, the measurement unit calculates the amplitude of vibration of the substrate based on the measurement result of the height from the imaging unit to the substrate measured by the height measurement unit, and based on the calculated amplitude The position of the imaging unit is adjusted.

  According to one aspect of the embodiment, the measuring device can be reduced in weight and can be made inexpensive.

FIG. 1 is a schematic explanatory view showing the configuration of the substrate processing system according to the first embodiment. FIG. 2 is a schematic perspective view showing the configuration of the line width measuring apparatus shown in FIG. FIG. 3 is a block diagram of the line width measuring apparatus shown in FIG. FIG. 4 is a schematic enlarged view of the substrate. FIG. 5 is a flowchart showing the processing procedure of the line width measurement processing. FIG. 6A is a schematic plan view of a substrate. FIG. 6B is a schematic enlarged plan view showing a part of the substrate shown in FIG. 6A in an enlarged manner. FIG. 7 is a graph showing the vibration of the substrate. FIG. 8 is a schematic explanatory diagram illustrating a modification of measurement points measured on the substrate and the second substrate. FIG. 9 is a schematic perspective view showing the configuration of the line width measuring apparatus according to the second embodiment. FIG. 10 is a flowchart illustrating a processing procedure of line width measurement processing according to the third embodiment. FIG. 11 is a flowchart illustrating a processing procedure of line width measurement processing according to the fourth embodiment.

  Hereinafter, embodiments of a measurement apparatus, a substrate processing system, and a measurement method disclosed in the present application will be described in detail with reference to the accompanying drawings. In addition, this invention is not limited by embodiment shown below.

(First embodiment)
<1. Substrate processing system>
First, the configuration of the substrate processing system according to the first embodiment will be described with reference to FIG. FIG. 1 is a schematic explanatory view showing the configuration of the substrate processing system according to the first embodiment.

  A substrate processing system 1 according to the first embodiment shown in FIG. 1 performs processing for forming a pattern on a substrate to be processed G (hereinafter referred to as “substrate G”, not shown in FIG. 1) by a photolithography process. Is a unit.

  The substrate processing system 1 includes a resist coating device 11, a vacuum drying device 12, a pre-baking device 13, a cooling device 14, an exposure device 15, a local exposure device 16, a developing device 17, and a line width measuring device 18. Is provided. Each device 11-18 mentioned above is integrally connected in this order in the X-axis positive direction. The above-described line width measuring device 18 corresponds to an example of a measuring device.

  The arrangement position of the local exposure device 16 is not limited to the subsequent stage of the exposure device 15 described above. That is, for example, the local exposure device 16 may be arranged at the rear stage of the pre-baking device 13 or the rear stage of the cooling device 14.

  The devices 11 to 18 described above are connected by a transport mechanism (not shown in FIG. 1) that transports the substrate G in the positive direction of the X axis. Accordingly, the substrate G passes through each of the devices 11 to 18 while being transported by the transport mechanism, and a pattern is formed. As described above, in the substrate processing system 1, the apparatuses 11 to 18 are inlined and the photolithography process is performed. Further, in the substrate processing system 1, it is assumed that the substrate G is caused to flow by the transport mechanism at predetermined time intervals or sequentially at predetermined intervals.

  The resist coating apparatus 11 of the substrate processing system 1 applies a photosensitive resist to the substrate G. Note that any of a positive resist and a negative resist can be used as the resist described above.

  The reduced-pressure drying device 12 places the substrate G in the reduced-pressure chamber, and dries the resist film formed on the substrate G. The pre-baking device 13 heats the substrate G to evaporate the solvent of the resist film, and fixes the resist film to the substrate G. The cooling device 14 cools the substrate G heated by the pre-baking device 13 until it reaches a predetermined temperature.

  The exposure apparatus 15 exposes the resist film formed on the substrate G in a predetermined pattern shape using a mask. The local exposure device 16 locally exposes the resist film, for example, in order to suppress variations in the pattern formed on the substrate G. That is, for example, if the line width of the pattern formed on the substrate G is different from the desired line width, the local exposure device 16 locally exposes the different portions to thereby change the pattern width. The line width is corrected.

  The developing device 17 forms a pattern on the substrate G by performing a development process by immersing the substrate G after being exposed by the exposure device 15 and the local exposure device 16 in a developing solution. The line width measuring device 18 measures the line width of the pattern formed on the substrate G by the developing process in the developing device 17.

  In the above description, the measurement target is the line width of the pattern, but this is an example and is not limited. In other words, the measurement target may be anything as long as it relates to the shape of the pattern. Specifically, for example, dimensions related to the shape of the pattern such as the length and thickness of the pattern, the curvature, the layout, and the loss or deformation of the pattern may be measured.

  By the way, as an apparatus for measuring the line width of a substrate pattern, for example, an adsorption plate is placed on a stone surface plate, and the substrate pattern is placed on the adsorption plate and fixed. Conventional techniques for measuring are known. However, in the case of such a conventional technique, since the stone surface plate is manufactured from marble or the like, the weight of the entire line width measuring device is increased, and the device may be expensive.

  Therefore, in the line width measuring apparatus 18 according to the first embodiment, an imaging unit is disposed above the transport unit that transports the substrate G, and the pattern of the substrate G placed on the transport unit is imaged. And the line width of the pattern was measured based on the image information of the pattern imaged by the imaging unit. Thereby, compared with an apparatus provided with a stone surface plate etc., while being able to achieve weight reduction of the line width measuring apparatus 18, the line width measuring apparatus 18 can be made cheap.

  Further, in the prior art, the line width of the pattern is measured while suppressing the vibration of the substrate by using a stone surface plate, a damping mechanism, or the like at a portion on which the substrate is placed. On the other hand, in the line width measuring apparatus 18 according to the first embodiment, since the substrate G is placed on the transfer unit, the vibration of the transfer unit is transmitted and the substrate G also vibrates.

  Therefore, in the present embodiment, the edge strength of the pattern is calculated based on the image information of the pattern imaged by the imaging unit. When the calculated edge strength is equal to or higher than the predetermined edge strength, that is, when the image captured by the imaging unit is in focus, the line width of the pattern is measured based on the captured image information. did. Thereby, even if it is a case where the board | substrate G is mounted on the conveyance part and is vibrating, the line | wire width of a pattern can be measured.

<2. Configuration of line width measuring device>
Hereinafter, the configuration of the line width measuring device 18 and the line width measuring process of the pattern of the substrate G performed using the line width measuring device 18 will be described in detail. FIG. 2 is a schematic perspective view showing the configuration of the line width measuring device 18. In the following, as shown in FIG. 2, the Y-axis direction and the Z-axis direction orthogonal to the above-described X-axis direction are defined, and the positive Z-axis direction is defined as a vertically upward direction.

  As shown in FIG. 2, the line width measuring device 18 includes a transport unit 20, an imaging unit 30, a moving unit 40, and a measurement control device 50. The conveyance unit 20 is, for example, a roller conveyor, and conveys the substrate G placed on the roller 21 in the horizontal direction, specifically in the positive direction of the X axis, by rotating a large number of rollers 21. In FIG. 2, the roller 21 is shown through.

  The transport unit 20 is a part of the transport mechanism of the substrate processing system 1 described above. Accordingly, the transport unit 20 transports the substrate G unloaded from the developing device 17 disposed in the front stage of the line width measuring device 18 in the substrate processing system 1.

  Further, the operation of the transport unit 20, specifically, the rotation operation of the roller 21 is controlled by the measurement control device 50. Here, the transport unit 20 is a roller conveyor, but the present invention is not limited to this, and may be another transport mechanism such as a belt conveyor or a chain conveyor.

  In the transport unit 20, a plurality of (for example, four) substrate position detection units 22 indicated by broken lines are arranged near the transport surface for transporting the substrate G. The substrate position detection unit 22 outputs a detection signal to the measurement control device 50 when the substrate G is positioned above. As the substrate position detection unit 22, for example, an optical stock sensor can be used.

  As will be described later, the measurement control device 50 determines whether or not the substrate G is placed at a predetermined position based on the detection signal of the substrate position detection unit 22, and thus the substrate position detection unit 22. Are arranged below the substrate G placed at a predetermined position. In the above description, the number of substrate position detection units 22 is four, but this is only an example, and may be three or less, or five or more.

  The imaging unit 30 is arranged above the transport unit 20 in the Z-axis direction, and images the pattern of the substrate G placed on the transport unit 20 from above. For example, a CCD (Charge Coupled Device) camera can be used as the imaging unit 30. Image information captured by the imaging unit 30 is input to the measurement control device 50.

  A camera height measurement unit 31 is installed in the vicinity of the imaging unit 30. The camera height measurement unit 31 is a measurement unit that measures the height in the Z-axis direction from the lens of the imaging unit 30 to the pattern surface (upper surface) Ga on which a pattern is formed on the substrate G. A measurement result obtained by the camera height measurement unit 31 is input to the measurement control device 50 and used to adjust the height of the imaging unit 30. For example, a laser displacement meter can be used as the camera height measuring unit 31.

  The moving unit 40 moves the imaging unit 30 in the horizontal direction (XY axis direction) or the vertical direction (Z direction) with respect to the pattern surface Ga of the substrate G. Specifically, the moving part 40 includes a guide rail part 41, a slide part 42, and a connecting part 43.

  The guide rail portions 41 are respectively disposed on both end sides in the Y-axis direction of the transport unit 20 and are installed so as to extend along the X-axis direction. The slide part 42 is slidably (slidably) connected to each guide rail part 41, and is thus capable of linear movement in the X-axis direction along the guide rail part 41.

  The connecting portion 43 connects the slide portions 42 to each other and is arranged so as to be bridged above the substrate G. Both the imaging unit 30 and the camera height measuring unit 31 are connected to the connecting unit 43 through the attachment plate 44 so as to be movable in the Y-axis and Z-axis directions.

  Although not shown, the moving unit 40 includes a drive source that moves the slide unit 42 in the X-axis direction with respect to the guide rail unit 41, and the imaging unit 30 and the like with respect to the connecting unit 43 in the Y-axis direction and the Z-axis direction. And a drive source to be moved. As the drive source described above, for example, an electric motor can be used. Thereby, for example, the measurement control device 50 controls the drive source of the moving unit 40, so that the imaging unit 30 can be moved with respect to the substrate G in the three directions of the X, Y, and Z axes.

  The measurement control device 50 is a device that controls the operation of the line width measurement device 18. FIG. 3 is a block diagram of the line width measuring device 18.

  As shown in FIG. 3, the measurement control device 50 is a computer that includes a measurement unit 51, a storage unit 52, and a feedback unit 53. The measurement control device 50 is connected to the above-described local exposure device 16, the transport unit 20, the substrate position detection unit 22, the imaging unit 30, the camera height measurement unit 31, the moving unit 40, and the like so as to be able to communicate with each other.

  The storage unit 52 stores a program for controlling the line width measurement process. The measurement unit 51 controls the operation of the line width measurement device 18 by reading and executing the program stored in the storage unit 52.

  The program may be recorded on a computer-readable recording medium and may be installed in the storage unit 52 of the measurement control device 50 from the recording medium. Examples of the computer-readable recording medium include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical disk (MO), and a memory card.

  The storage unit 52 further stores in advance a pattern shape of the substrate G (hereinafter referred to as “memory pattern shape”) and position information of a pattern to be measured on the substrate G. FIG. 4 is a schematic enlarged view of the substrate G for explaining the memory pattern shape and position information. Here, a case where it is desired to measure the line width of the pattern P indicated by the symbol A in FIG. 4 among a plurality of patterns formed on the substrate G will be described. In FIG. 4, the pattern is hatched for easy understanding.

  As shown in FIG. 4, there is a pattern B in the vicinity of the pattern P to be measured, which has a shape that can serve as a mark for the pattern P, as shown by being surrounded by a broken line. The storage unit 52 stores the shape of the pattern B in advance as “memory pattern shape B”. The memory pattern shape B is used when estimating whether or not the image information captured by the imaging unit 30 includes the pattern P to be measured in the line width measurement process, which will be described later.

  The storage pattern shape B is set for each measurement point described later and stored in the storage unit 52. However, for example, when the memory pattern shape B is the same at two or more measurement points, the memory pattern shape B may be shared by two or more measurement points.

  The position information described above is pixel coordinate information indicating the relative position of the measurement point with respect to a pattern that matches the stored pattern shape B in the captured image, for example. Specifically, the origin O as shown in FIG. 4 is set in the memory pattern shape B, and the pixel coordinate information includes information on the start point position XY1 and the end point position XY2 of the measurement point with respect to the origin O. .

  Specifically, the lower end position of one of the patterns P to be measured (upper pattern P in FIG. 4) is set as the start point position XY1, and the other end of the pattern P to be measured (lower side in FIG. 4) is set as the end position XY2. The upper end position of the pattern P) is set. Then, the distance between the start point position XY1 and the end point position XY2 is measured as “line width A”. The measurement of the line width A will be described later. Note that the information of the start point position XY1 and the end point position XY2 described above is represented by the X and Y coordinates of the pixel when the image is composed of, for example, 4000 × 2000 pixels.

  Returning to the description of FIG. 3, the feedback unit 53 feeds back (sends) data indicating the line width of the pattern measured in the line width measurement process to the local exposure apparatus 16. The local exposure device 16 compares the line width of the measured pattern with the desired line width, and if there is a deviation, calculates the amount of deviation, and determines the exposure illuminance and the substrate G based on the calculated amount of deviation. Correct the local exposure position. As a result, the substrate G transported to the local exposure apparatus 16 after correction can be locally exposed to the corrected illuminance or the position of the substrate G, and thus the line width of the pattern of the substrate G can be set to a desired line width. It can be corrected.

<3. Processing of line width measuring device>
Next, the specific contents of the line width measurement process performed by the line width measuring device 18 will be described with reference to FIG. FIG. 5 is a flowchart showing the processing procedure of the line width measurement processing. The line width measuring device 18 executes each processing procedure shown in FIG. 5 based on the control of the measuring unit 51 of the measurement control device 50.

  The measurement unit 51 controls the operation of the transport unit 20 to transport the developed substrate G (step S1). Subsequently, the measurement unit 51 determines whether or not the substrate G is placed at a predetermined position based on the detection signal output from the substrate position detection unit 22 (step S2). Here, the predetermined position is a position of the substrate G where the pattern can be imaged by the imaging unit 30.

  If the measurement unit 51 determines that the substrate G is not placed at a predetermined position (step S2, No), the process is ended as it is. On the other hand, when the measurement unit 51 determines that the substrate G is placed at a predetermined position (step S2, Yes), the measurement unit 51 stops the operation of the transport unit 20 and stops the substrate G (step S3).

  Subsequently, the measurement unit 51 determines the position of the measurement point of the pattern on the substrate G, specifically, the position of the pattern to be measured this time (hereinafter also referred to as “measurement point”) (step S4). Here, the measurement points of the substrate G will be described. 6A is a schematic plan view of the substrate G, and FIG. 6B is a schematic enlarged plan view showing a part of the substrate G shown in FIG. 6A in an enlarged manner. In FIGS. 6A and 6B, the measurement points are schematically indicated by x for easy understanding.

  As shown in FIG. 6A, many measurement points D exist on the pattern surface Ga of the substrate G. However, if the line width of the pattern is measured at all these measurement points D, there is a possibility that the time required for the measurement becomes long.

  Therefore, in the present embodiment, the pattern surface Ga of the substrate G is partitioned into a plurality of regions, and the line width is measured within one predetermined region among the partitioned regions. Specifically, as shown by a broken line in FIG. 6A, the pattern surface Ga of the substrate G is divided into a plurality of (for example, nine) regions C1 to C9 so that the measurement unit 51 can identify the regions C1 to C9. . And the measurement part 51 measures a line | wire width within one predetermined area | region (for example, area | region C1) among area | regions C1-C9.

  FIG. 6B shows an enlarged region C1, which is one of the regions C1 to C9. As shown in FIG. 6B, a plurality of (for example, nine) measurement points D are set in the region C1. Step S4 described above is a process of determining the position of the measurement point D to be measured this time among the plurality of measurement points D in the region C1, specifically, the X-axis direction position and the Y-axis direction position of the measurement point D. is there.

  Continuing the description of the measurement point D, the measurement unit 51 sequentially measures the measurement point D in the region C1, and when the measurement of the nine measurement points D is completed, the measurement processing of the substrate G of this time is performed. Finish.

  In the line width measuring device 18, the substrate G that has been measured is carried out, and the second substrate G2 to be measured next is carried in. In that case, the measurement unit 51 uses the moving unit 40 to move the imaging unit 30 to a region corresponding to a predetermined region (here, the region C1 of the substrate G) on the second substrate G2, that is, the region C1 of the second substrate G2. Move to another area (for example, area C2 of the second substrate G2), and measure the line width of the pattern in the other area C2.

  In FIG. 6A, for convenience of understanding, the substrate G and the second substrate G2 are shown as being the same substrate, but the second substrate G2 has a line width measuring device 18 after the substrate G is unloaded. Therefore, the substrate G and the second substrate G2 are separate substrates.

  As described above, the measurement unit 51 sequentially changes the area to be measured, for example, from C1 to C2 and from C2 to C3. For this reason, for example, in the example shown in FIG. 6A in which the region is divided into nine, if nine substrates flowing are measured, the line width at the measurement point D of the entire substrate, specifically the regions C1 to C9, is measured. Will be. As a result, a large number of measurement points D on the substrate can be efficiently measured as a whole. In addition, since the measurement with one substrate is performed in one area, the time required for the measurement does not become longer.

  In the above description, the substrate G is divided into a plurality of regions C1 to C9 and measured one by one. However, the measurement is not limited to this, and the measurement point is allowed if the measurement time is allowed. You may make it measure the line width of all D. Moreover, the number of the above-mentioned area | regions C1-C9 and the measurement points D is an illustration, Comprising: It is not limited.

  Returning to the description of FIG. 5, the measurement unit 51 subsequently controls the operation of the moving unit 40 so that the imaging unit 30 moves above the measurement point D determined in step S4 (step S5). Next, the measurement unit 51 adjusts the height of the imaging unit 30 in the Z-axis direction (step S6). Specifically, in step S <b> 6, based on the measurement result of the camera height measuring unit 31, the distance from the lens of the imaging unit 30 to the pattern surface Ga of the substrate G is moved so as to be the work distance of the imaging unit 30. The operation of the unit 40 is controlled.

  More specifically, the measurement unit 51 uses the camera height measurement unit 31 to measure the height in the Z-axis direction from the imaging unit 30 to the substrate G a plurality of times. Then, the measurement unit 51 calculates the amplitude of the vibrating substrate G based on the obtained measurement result, and from the lens of the imaging unit 30 to the pattern surface Ga of the substrate G according to the calculated median value of the amplitude. The operation of the moving unit 40 is controlled so that the distance becomes the work distance of the imaging unit 30.

  Thereby, even when the substrate G is vibrating, it is possible to easily capture an in-focus image in the processing described later. In the above description, the median amplitude is used. However, the present invention is not limited to this. For example, an arithmetic average or a mode value may be used.

  Subsequently, the measurement unit 51 determines whether or not the number of times the pattern is captured by the imaging unit 30 is greater than or equal to a predetermined number (step S7). The predetermined number here is set to an integer of 2 or more, for example.

  When the measurement unit 51 determines that the number of times of imaging is less than the predetermined number of times (No at Step S7), the measurement unit 51 operates the imaging unit 30 to image the pattern of the substrate G (Step S8). Next, the measuring unit 51 performs a pattern search process (step S9).

  In the pattern search process, for example, a correlation value between a pattern shape included in image information captured by the image capturing unit 30 (hereinafter referred to as “image pattern shape”) and a storage pattern shape B stored in the storage unit 52 is calculated. The Here, the correlation value is a value indicating the similarity between the image pattern shape and the memory pattern shape B.

  Next, the measurement unit 51 determines whether or not the calculated correlation value is greater than or equal to a predetermined correlation value (step S10). Here, the processing of step S10 will be described. When the correlation value is less than the predetermined correlation value and relatively low, the image information captured by the imaging unit 30 does not include a pattern that matches the storage pattern shape B. As a result, it is estimated that the pattern P to be measured is not included. On the other hand, when the correlation value is equal to or higher than the predetermined correlation value, the image information captured by the imaging unit 30 includes a pattern that matches the stored pattern shape B, and thus is close to the matched pattern. It was estimated that the pattern P to be measured was also included.

  That is, step S10 can be said to be a process of determining whether or not the position of the imaging unit 30 is misaligned with respect to the pattern P (measurement point D) to be measured. Therefore, when the correlation value is less than the predetermined correlation value (step S10, No), the measurement unit 51 does not include the pattern P that the image information is to be measured, and the imaging unit 30 is at a position different from the measurement point D. Therefore, the position of the imaging unit 30 is adjusted (step S11).

  In the process of step S11, for example, the imaging unit 30 is moved by a predetermined distance in a predetermined direction (for example, the X-axis direction) set in advance, and the position is adjusted. Then, after adjusting the position of the imaging unit 30, the measurement unit 51 returns to step S8 and performs imaging again.

  In the above description, the position of the imaging unit 30 is adjusted by moving it in a predetermined direction by a predetermined distance. However, the present invention is not limited to this. That is, for example, the magnification of the lens of the imaging unit 30 may be reduced, the camera field of view may be enlarged, and the imaging unit 30 may be moved to the measurement point D and adjusted based on image information from the enlarged camera field of view. .

  As described above, when the correlation value is less than the predetermined correlation value, the imaging unit 30 is caused to perform the imaging of the pattern of the substrate G again, so that the line width other than the line width A of the pattern P to be measured is erroneously set. Measurement can be prevented.

  On the other hand, when the correlation value is equal to or greater than the predetermined correlation value (Yes in step S10), the measurement unit 51 calculates the edge strength of the pattern based on the image information of the pattern captured by the imaging unit 30, and calculates the calculated edge strength. Is determined to be greater than or equal to a predetermined edge strength (step S12).

  The edge strength here means the degree of change in the density of the boundary (contour) in the imaged pattern. As the edge strength increases, the density becomes clear, that is, the image is in focus. means.

  When the edge intensity is less than the predetermined edge intensity and relatively low (No at Step S12), the measurement unit 51 returns to Step S7 because the image captured by the imaging unit 30 is not in focus. If the number of times of imaging is still less than the predetermined number of times, in other words, if the number of times of imaging has not reached the predetermined number of times, the imaging of the pattern of the substrate G is performed again in step S8, and the processing after step S9 Is done again.

  On the other hand, when the edge strength is relatively high at a predetermined edge strength or higher (Yes in step S12), the measurement unit 51 continues to measure using the image because the captured image is in focus. A start point position XY1 and an end point position XY2 of the point D are calculated (step S13).

  Specifically, the measurement unit 51 has a relatively high correlation value with respect to the memory pattern shape B in the focused image, and the start point position XY1 and end point of the measurement point D from the position of the pattern that matches the memory pattern shape B. A position XY2 is calculated.

  More specifically, the origin O is set in the memory pattern shape B as described above (see FIG. 4). In the captured image, the measurement unit 51 sets a position corresponding to the origin O in the pattern that matches the stored pattern shape B as a “reference point”. The measurement unit 51 calculates the start point position XY1 and the end point position XY2 based on the reference point and the pixel coordinate information as the position information of the storage unit 52.

  Then, the measurement unit 51 measures the distance between the start point position XY1 and the end point position XY2 calculated in step S13 as the line width A of the pattern P at the measurement point D (step S14).

  As described above, in the present embodiment, in the captured image, the start point position XY1 of the measurement point D based on the pattern that matches the stored pattern shape B and the position information that indicates the relative position of the measurement point D with respect to the pattern. The end point position XY2 is calculated and the line width A of the pattern P is measured. As a result, for example, the start point position XY1 and the end point position XY2 can be calculated regardless of the position in the captured image where the pattern that matches the memory pattern shape B is shown, and the line of the pattern P The width A can be measured.

  Further, as described above, in the measurement unit 51, the edge strength of the pattern is calculated based on the image information of the pattern imaged by the imaging unit 30, and when the calculated edge strength is equal to or higher than the predetermined edge strength, The line width A of the pattern P is measured based on the pattern image information.

  As a result, even when the substrate G is vibrating, it is possible to select an image having a relatively high edge strength, that is, an in-focus image, so that the line width A of the pattern P at the measurement point D can be accurately measured. can do.

  The line width measurement based on the edge strength (steps S12 to S14 and S8) will be described again with reference to FIG. FIG. 7 is a graph showing the vibration of the substrate G. Note that reference signs T1 to T4 in FIG. 7 indicate the timing at which imaging is performed by the measurement unit 51, that is, the imaging time.

  Since the substrate G in the present embodiment is placed on the transport unit 20, the substrate G is affected by disturbances such as vibration of the transport unit 20 and air conditioning, and vibrates in the Z-axis direction as shown in FIG. On the other hand, in the imaging unit 30, an in-focus image cannot be captured unless the position of the pattern surface Ga of the substrate G is within the depth-of-field range E of the imaging unit 30. Note that the edge strength is high when the pattern surface Ga of the substrate G is in the depth-of-field range E, and the edge strength is low when it is outside the depth-of-field range E.

  In the example illustrated in FIG. 7, imaging is performed in a state where the position of the pattern surface Ga of the substrate G is not within the depth-of-field range E from the first imaging time T1 to the third imaging time T3. . Therefore, at the imaging times T1, T2, and T3, the edge strength becomes less than the predetermined edge strength, and the processing in step S8 is repeated to perform imaging again.

  At the fourth imaging time T4, since the imaging is performed when the position of the pattern surface Ga of the substrate G enters the range E of the depth of field, the edge strength is equal to or higher than the predetermined edge strength. It becomes. In the present embodiment, since the line width is measured based on the image whose edge intensity is high at the imaging time T4, that is, the focused image, the substrate G is placed on the transport unit 20 and vibrates. Even in this case, the line width of the pattern can be reliably measured.

  In this way, when the edge intensity is less than the predetermined edge intensity, the imaging unit 30 is made to perform the imaging of the pattern of the substrate G again, so that the line width is based on the image that is surely in focus. Can be measured.

  Returning to the description of FIG. 5, the measurement unit 51 determines whether or not the measurement of the predetermined measurement point D within the predetermined region C <b> 1 is completed. In the example illustrated in FIG. 6B, the measurement unit 51 measures nine measurement points D. It is determined whether or not has been completed (step S15). When the measurement unit 51 determines that the measurement of the predetermined measurement point D is not completed (No at Step S15), the measurement unit 51 returns to Step S4 to determine the position of another measurement point D within the predetermined region C1, The line width is measured in steps S5 to S14 described above.

  Moreover, the measurement part 51 skips the process of step S8-S14, and performs the process of step S15, when the frequency | count of imaging becomes more than predetermined number (step S7, Yes). More specifically, when the edge strength is less than the predetermined edge strength in step S12, that is, when the captured image is not in focus, the measurement unit 51 returns to step S7 and reaches the predetermined number of times. Until the imaging is repeated.

  However, depending on the timing of imaging and the vibration state of the substrate G, it may not be possible to obtain an in-focus image even if imaging is repeated. Therefore, in the measurement unit 51 according to the present embodiment, when the number of times of imaging is equal to or greater than the predetermined number (step S7, Yes), an in-focus image is measured for the measurement point D currently being measured. It is determined that the image cannot be captured, and the processing of S8 to S14 is skipped (imaging is stopped).

  Then, in step S15, the measurement unit 51 determines whether or not the measurement of the nine measurement points D has been completed, and if there is a measurement point D that has not been measured yet, other than the measurement point D that was to be measured. Then, the measurement point D is shifted to the measurement (return to step S4).

  In this way, by setting the upper limit value (predetermined number) for the number of times of imaging, for example, the imaging process is continued until an image focused on one measurement point D is captured, and the processing time becomes longer. It is possible to avoid the occurrence of inconvenience such as end.

  Of the nine measurement points D to be measured (see FIG. 6B), for example, when there is a measurement point D that cannot be measured only at one location, from the measurement results of the remaining eight measurement points D that could be measured. Alternatively, the line width A of the measurement point D that could not be measured may be obtained by interpolation.

  Next, when the measurement unit 51 determines that the measurement of the predetermined measurement point D is completed (step S15, Yes), the process of FIG. 5 is terminated, and then, for example, the transport unit 20 is operated to measure the line width of the substrate G. Unload from the device 18.

  As described above, the measurement control device 50 feeds back the data indicating the line width of the pattern measured in the line width measurement process to the local exposure device 16, and the local exposure device 16 corrects the illuminance of exposure and the like. Correct the line width of the pattern.

  As described above, the line width measurement device 18 according to the first embodiment includes the transport unit 20, the imaging unit 30, and the measurement unit 51. The transport unit 20 transports the substrate G on which the pattern is formed in the horizontal direction. The imaging unit 30 is disposed above the transport unit 20 and captures an image of the pattern of the substrate G placed on the transport unit 20. The measurement unit 51 measures the pattern shape (for example, line width) based on the image information of the pattern imaged by the imaging unit 30. Therefore, according to the line width measuring device 18 according to the first embodiment, the weight can be reduced and the cost can be reduced.

  By the way, in the above, the measurement area D is changed by changing the measurement area from the area C1 to the area C2 between the substrate G to be measured this time and the second substrate G2 to be measured next. Is not to be done. That is, for example, the measurement point indicated by the symbol Da in FIG. 6A may be measured on the substrate G or the second substrate G2.

  That is, the measurement unit 51 causes the plurality of measurement points D on the second substrate G2 to include the measurement points Da at positions corresponding to the measurement points Da measured on the substrate G. Note that the measurement point Da is measured in the same manner for the next substrate that is measured after the second substrate G2.

  Thus, by continuously measuring the line width of the pattern at the common (overlapping) measurement point Da, the data of the measured line width can be given continuity, for example, the measured line width It is also possible to easily detect minute changes.

  In the above description, the measurement point Da is measured in common for all the substrates for which the line width is measured. However, the measurement point Da is not limited to this. For example, for the substrate to be continuously measured. Only the measurement points may be shared.

  FIG. 8 is a schematic explanatory view showing measurement points measured on the substrate G and the second substrate G2. In FIG. 8, the measurement points measured on the substrate G are surrounded by a broken line F1, while the measurement points measured on the second substrate G2 are surrounded by a two-dot chain line F2.

  As shown in FIG. 8, among a plurality of measurement points D measured by the substrate G and the second substrate G2, some of the measurement points Db are the same measurement point, more precisely, measurement of the positions corresponding to some of the measurement points Db. I tried to be a point. Even when configured in this manner, the measured line width data can be made continuous as described above, and for example, a minute change in the measured line width can be easily detected. It becomes.

(Second Embodiment)
FIG. 9 is a schematic perspective view similar to FIG. 2, showing the configuration of the line width measuring device 18 according to the second embodiment. In the following description, the same components as those in the first embodiment are denoted by the same reference numerals and description thereof is omitted.

  Description will be made focusing on differences from the first embodiment. The line width measuring device 18 according to the second embodiment includes a second imaging unit 130 and a second camera height measuring unit 131. I made it. The second image capturing unit 130 and the second camera height measuring unit 131 have substantially the same configuration as the image capturing unit 30 and the camera height measuring unit 31, and thus are three directions in the X, Y, and Z axis directions with respect to the substrate G. Configured to be able to move to. In FIG. 9, the movable range in the Y-axis direction of the imaging unit 30 is indicated by “Y1”, and the movable range in the Y-axis direction of the second imaging unit 130 is indicated by “Y2”.

  Then, the measurement unit 51 measures the line width based on the image information from the second imaging unit 130. Thereby, the number of measurement points D on one substrate G can be increased by the measurement points D measured based on the image information of the second imaging unit 130, and thus the line width on one substrate G can be increased. The number of patterns for which can be measured can also be increased.

  Further, a plurality of measurement points D may be imaged by the imaging unit 30 and the second imaging unit 130. In such a configuration, the imaging process and the line width measurement process are required. Time can be shortened.

  Further, as shown in FIG. 9, the movable range Y1 of the imaging unit 30 and the movable range Y2 of the second imaging unit 130 are set to overlap each other by a predetermined amount. Thereby, in the substrate G, an area that cannot be imaged by the imaging unit 30 or the second imaging unit 130, that is, a so-called blind spot region, can be eliminated, so that the line width of the pattern of the substrate G is used by the imaging unit 30 and the second imaging unit 130. Can be measured reliably.

  In addition, a guard portion 145 is attached to a surface of the mounting plate 144 of the second imaging unit 130 that faces the mounting plate 44 of the imaging unit 30. The guard part 145 is a plate-like member manufactured from a material having elasticity, for example. For example, even if the imaging unit 30 and the second imaging unit 130 are in contact with each other, the guard unit 145 can reduce the impact force acting on the imaging unit 30 and the second imaging unit 130. it can.

  In the above description, the guard unit 145 is attached to the second image pickup unit 130 side. However, the guard unit 145 may be attached to the image pickup unit 30 and further attached to both the image pickup unit 30 side and the second image pickup unit 130 side. You may comprise. The remaining configuration and effects are the same as those in the first embodiment, and a description thereof will be omitted.

(Third embodiment)
FIG. 10 is a flowchart showing the processing procedure of the line width measurement process of the line width measuring apparatus 18 according to the third embodiment. Note that the processing in steps S101 to S106 shown in FIG. 10 is the same as the processing in steps S1 to S6 shown in FIG.

  In the third embodiment, in the captured image information, the presence / absence of a pattern that matches the memory pattern shape B and the presence / absence of the measurement point D are determined, respectively, and there is no pattern or measurement point D that matches the memory pattern shape B. The position of the imaging unit 30 is adjusted.

  Specifically, as shown in FIG. 10, the measurement unit 51 adjusts the height of the imaging unit 30 in the Z-axis direction in step S106, and then operates the imaging unit 30 to capture the pattern of the substrate G ( Step S107). Next, the measurement unit 51 performs a pattern search process to calculate a correlation value (step S108).

  Subsequently, the measurement unit 51 determines whether the calculated correlation value is not 0 (step S109). As described above, the correlation value is a value indicating the similarity between the image pattern shape and the storage pattern shape B. Therefore, when the correlation value is 0, the similarity is low, and thus stored in the captured image information. This means that the pattern shape B does not exist.

  When the correlation value is 0 (No at Step S109), the measurement unit 51 adjusts the position of the imaging unit 30 (Step S110). In the process of step S110, for example, the imaging unit 30 is moved so as to shift the camera field of view of the imaging unit 30 by half. Then, after adjusting the position of the imaging unit 30, the measurement unit 51 returns to step S107 and performs imaging again.

  By adjusting the position of the imaging unit 30 in this manner, it is possible to easily obtain image information including a pattern that matches the memory pattern shape B at an early stage. In the above description, the imaging unit 30 is moved so as to shift the camera field of view by half during the position adjustment. However, this is only an example, and the imaging unit 30 is not limited so that the camera field of view is shifted. Should be moved.

  In addition, when the memory pattern shape B does not exist also in the image information imaged after the position adjustment, and the process of step S110 is performed again, the outer periphery is centered on the coordinates of the imaging unit 30 imaged first. It is preferable to adjust the position again while moving the imaging unit 30. Thereby, it is possible to easily obtain image information including a pattern that matches the memory pattern shape B with a relatively small number of imaging.

  When the measurement unit 51 determines that the correlation value is not 0 (step S109, Yes), that is, when the captured image information includes a pattern that matches the storage pattern shape B, the measurement is performed in the image information. It is determined whether or not there is a point D (step S111).

  Here, information indicating the relative position of the measurement point D with respect to the storage pattern shape B (pattern position information) is stored in the storage unit 52 in advance. Accordingly, in step S111, based on the position information of the pattern that matches the stored pattern shape B and the information indicating the relative position, it is determined whether or not there is a measurement point D in the captured image information.

  When determining that the measurement point D is not included in the captured image information (No at Step S111), the measurement unit 51 adjusts the position of the imaging unit 30 (Step S112). In the process of step S112, for example, the shift amount between the position of the memory pattern shape B and the position of the pattern that matches the memory pattern shape B is calculated, and the imaging unit 30 is moved so that the calculated shift amount becomes zero. Let

  Then, after adjusting the position of the imaging unit 30, the measurement unit 51 returns to step S107 and performs imaging again. Thereby, the image information including the measurement point D can be obtained early.

  On the other hand, when the measurement unit 51 determines that there is the measurement point D in the captured image information (Yes in step S111), the measurement unit 51 determines whether or not the number of pattern imaging by the imaging unit 30 is equal to or greater than a predetermined number (step) S113). Since the process in step S113 is the same as that in step S7 shown in FIG.

  When the measurement unit 51 determines that the number of imaging is less than the predetermined number of times (No at Step S113), the measurement unit 51 determines whether the correlation value is equal to or greater than the predetermined correlation value (Step S114). The processing in step S114 is the same as step S10 shown in FIG.

  Then, when the correlation value is less than the predetermined correlation value (No at Step S114), the measurement unit 51 returns to Step S107 and performs imaging again. On the other hand, when the correlation value is equal to or greater than the predetermined correlation value (Yes at Step S114), the measurement unit 51 determines whether the edge strength is equal to or greater than the predetermined edge strength (Step S115). Steps S115 to S118 are the same as steps S12 to S15 shown in FIG.

  As described above, in the third embodiment, in the captured image information, the presence / absence of a pattern matching the storage pattern shape B and the presence / absence of the measurement point D are determined in steps S109 and S111, respectively.

  If there is no pattern that matches the storage pattern shape B, the position of the imaging unit 30 is adjusted and then imaging is performed again. Thereby, it is possible to easily obtain image information including a pattern that matches the memory pattern shape B at an early stage.

  In addition, when there is no measurement point D in the captured image information, the imaging unit 30 is adjusted based on information indicating the relative position of the measurement point D stored in the storage unit 52, and then imaging is performed again. did. Thereby, the image information including the measurement point D can be obtained early. The remaining configuration and effects are the same as those in the first embodiment, and a description thereof will be omitted.

(Fourth embodiment)
FIG. 11 is a flowchart showing a processing procedure of a line width measurement process of the line width measurement apparatus 18 according to the fourth embodiment. Note that the processing in steps S201 to S212 shown in FIG. 11 is the same as the processing in steps S101 to S112 shown in FIG.

  In the above-described embodiment, an example in which imaging is performed once and processing for determining the presence / absence of the measurement point D is performed on the captured image information has been described. However, imaging is performed a plurality of times and a plurality of captured images is captured. You may make it perform determination of the presence or absence of the measurement point D with respect to information, or line width measurement.

  With this configuration, for example, the line width can be measured based on a plurality of pieces of image information that have already been captured while the imaging unit 30 moves to the next measurement point D. The time required for the line width measurement process per sheet can be further shortened.

  More specifically, as shown in FIG. 11, when the measurement unit 51 determines that the measurement point D is included in the image information captured in step S207 (step S211, Yes), the substrate G is imaged N times and the image is captured. The plurality of pieces of image information thus stored are stored in the storage unit 52 (step S213).

  Here, the above N is set to an integer of 2 or more. Specifically, the number of times of imaging is preferably about several to several tens of times, for example. Note that the imaging timing (imaging cycle) when imaging N times may be constant or variable.

  Here, when making an imaging timing variable, it is preferable to change according to the vibration of the board | substrate G, for example. That is, for example, the amplitude and frequency of vibration of the substrate G are detected and analyzed, and the imaging timing is shifted from the vibration of the substrate G based on the analysis result. Thereby, it can prevent that an imaging timing and the vibration of the board | substrate G synchronize, As a result, it can make it easy to image the focused image.

  Next, the measurement unit 51 determines whether image information (hereinafter referred to as “unmeasured image”) for which correlation value calculation or line width measurement is not performed is in the storage unit 52 (step S214). If the measurement unit 51 determines that there is an unmeasured image (Yes in step S214), the measurement unit 51 reads the unmeasured image from the storage unit 52, performs a pattern search process, and calculates a correlation value (step S215).

  Next, the measurement unit 51 determines whether or not the correlation value is greater than or equal to a predetermined correlation value (step S216). If the correlation value is greater than or equal to the predetermined correlation value (step S216, Yes), whether or not the edge strength is greater than or equal to the predetermined edge strength. Is determined (step S217).

  When the edge strength is greater than or equal to the predetermined edge strength (step S217, Yes), the measurement unit 51 calculates the start point position XY1 and the end point position XY2 of the measurement point D (step S218). Steps S218 to S220 are the same as the processes of steps S13 to S15 shown in FIG.

  Moreover, the measurement part 51 returns to the process of S214, when a correlation value is less than a predetermined correlation value (step S216, No) or when an edge strength is less than a predetermined edge strength (step S217, No).

  On the other hand, when the measurement unit 51 determines that there is no unmeasured image (step S214, No), that is, when the correlation value is calculated or the line width measurement is performed on all the image information stored in the storage unit 52. Steps S215 to S219 are skipped.

  As described above, in the fourth embodiment, the pattern shape (for example, based on the image information of a plurality of patterns obtained by causing the imaging unit 30 to capture the pattern of the substrate G a plurality of times (N times). The line width was measured.

  Thereby, for example, while the imaging unit 30 moves to the next measurement point D, it is possible to measure the line width based on a plurality of image information that has already been captured, and thus the line width per substrate G The time required for the measurement process can be further shortened. The remaining configuration and effects are the same as those in the above-described embodiment, and thus description thereof is omitted.

  In the above-described embodiment, for example, a diaphragm may be provided on the lens of the imaging unit 30. By providing this diaphragm, the depth-of-field range E shown in FIG. 7 is expanded, so that it is possible to make it easy to capture a focused image with high edge strength in the imaging unit 30.

  In the example illustrated in FIG. 7, the imaging unit 30 performs imaging with the same cycle. However, the imaging is not limited to this, and imaging may be performed with a different cycle. Further, for example, the period and frequency of vibration of the substrate G are detected and analyzed, and based on the analysis result, imaging is performed at a timing such that the position of the pattern surface Ga of the substrate G enters the range E of the depth of field. You may comprise. As a result, the image capturing unit 30 can easily capture an image with high edge strength and focus.

  In addition, before imaging the substrate G by the imaging unit 30, the tilt of the camera axis of the imaging unit 30 with respect to the pattern surface Ga of the substrate G is detected, and the position of the imaging unit 30 is corrected based on the detected tilt. May be. That is, for example, a mark for tilt detection is provided on the pattern surface Ga, while the mark is stored in the storage unit 52. Then, the imaging unit 30 or another imaging unit is used to image the mark on the pattern surface Ga, the captured mark is compared with the stored mark, and the camera axis of the imaging unit 30 with respect to the pattern surface Ga of the substrate G Detect the slope of. Next, based on the detected inclination, the position of the imaging unit 30 may be corrected so that the camera axis of the imaging unit 30 is orthogonal to the pattern plane Ga. Thereby, the imaging unit 30 can accurately capture the pattern of the substrate G, and the measurement unit 51 can accurately recognize the shape of the pattern of the substrate G from the captured image.

  In the above description, the interval between adjacent patterns P is measured as the line width A of the pattern P. However, the present invention is not limited to this, and for example, the interval between non-adjacent patterns may be measured as the line width. The pattern width or the like may be measured.

  Further effects and modifications can be easily derived by those skilled in the art. Thus, the broader aspects of the present invention are not limited to the specific details and representative embodiments shown and described above. Accordingly, various modifications can be made without departing from the spirit or scope of the general inventive concept as defined by the appended claims and their equivalents.

DESCRIPTION OF SYMBOLS 1 Substrate processing system 11 Resist coating device 12 Vacuum drying device 13 Pre-baking device 14 Cooling device 15 Exposure device 16 Local exposure device 17 Development device 18 Line width measurement device 20 Transport unit 30 Imaging unit 40 Moving unit 50 Measurement control device 51 Measurement unit 52 Storage unit 53 Feedback unit C1 to C9 Area D, Da, Db Measurement point G Substrate

Claims (12)

A transport unit for transporting a substrate on which a pattern is formed;
An imaging unit that is disposed above the transfer unit and that images the pattern of the substrate placed on the transfer unit;
A measurement unit that measures the shape of the pattern based on image information of the pattern imaged by the imaging unit ;
A height measuring unit that measures the height from the imaging unit to the substrate a plurality of times ,
The measuring unit is
The amplitude of the vibration of the substrate is calculated based on the measurement result of the height from the imaging unit to the substrate measured by the height measuring unit, and the position of the imaging unit is adjusted based on the calculated amplitude A measuring apparatus characterized by: The measuring unit is
The edge strength of the pattern is calculated based on the image information of the pattern imaged by the imaging unit, and the shape of the pattern based on the image information of the pattern when the calculated edge strength is equal to or higher than a predetermined edge strength The measuring apparatus according to claim 1, wherein: The measuring unit is
The measurement apparatus according to claim 2, wherein when the edge intensity is less than the predetermined edge intensity, the imaging unit is caused to perform imaging of the pattern of the substrate again. A storage unit for storing in advance the pattern shape of the substrate;
The measuring unit is
A correlation value between the image information of the pattern imaged by the imaging unit and the pattern shape stored in the storage unit is calculated, and when the calculated correlation value is equal to or greater than a predetermined correlation value, the image information of the pattern The shape of the pattern is measured based on the measurement device according to claim 1, 2, or 3. The measuring unit is
The measurement apparatus according to claim 4, wherein when the correlation value is less than the predetermined correlation value, the imaging unit is caused to perform imaging of the pattern of the substrate again. The measuring unit is
The measurement apparatus according to claim 4, wherein when the correlation value is 0, after the position of the imaging unit is adjusted, the imaging unit is caused to perform imaging of the pattern of the substrate again. A moving unit that moves the imaging unit in a horizontal direction with respect to a pattern surface on which the pattern is formed on the substrate;
The measuring unit is
The pattern surface of the substrate is identified by dividing it into a plurality of regions, the shape of the pattern is measured in one predetermined region of the plurality of regions, and the measurement is performed after the measurement in the predetermined region is completed. When the second substrate to be performed is transported by the transport unit, the imaging unit is moved to a region different from the region corresponding to the predetermined region on the second substrate via the moving unit, The measurement apparatus according to claim 1, wherein the shape of the pattern is measured in an area. The measuring unit is
The shape of the pattern is measured at a plurality of measurement points on the second substrate, and the plurality of measurement points on the second substrate include measurement points at positions corresponding to the measurement points measured on the substrate. The measuring apparatus according to claim 7. The imaging unit
There are multiple
The measuring unit is
The measurement apparatus according to claim 1, wherein the shape of each of the patterns is measured based on image information captured by a plurality of the imaging units. The measuring unit is
The shape of the pattern is measured based on image information of the plurality of patterns obtained by causing the imaging unit to capture the pattern of the substrate a plurality of times. The measuring device described. A resist coating apparatus for coating a resist on a substrate;
An exposure apparatus that exposes the resist film formed by the resist coating apparatus in a predetermined pattern shape;
A local exposure apparatus that locally exposes the resist film formed by the resist coating apparatus;
A developing device for developing the substrate after being exposed by the exposure device and the local exposure device to form a pattern;
A measuring device for measuring the shape of the pattern formed on the substrate,
The measuring device is
A transport unit for transporting the substrate on which the pattern is formed;
An imaging unit that is disposed above the transfer unit and that images the pattern of the substrate placed on the transfer unit;
A measurement unit that measures the shape of the pattern based on image information of the pattern imaged by the imaging unit ;
A height measuring unit that measures the height from the imaging unit to the substrate a plurality of times ,
The measuring unit is
The amplitude of the vibration of the substrate is calculated based on the measurement result of the height from the imaging unit to the substrate measured by the height measuring unit, and the position of the imaging unit is adjusted based on the calculated amplitude A substrate processing system. A transporting step of transporting the substrate by a transporting unit transporting the substrate on which the pattern is formed;
An imaging step of imaging the pattern of the substrate by an imaging unit that is disposed above the transport unit and that images the pattern of the substrate placed on the transport unit;
A measurement step of measuring the shape of the pattern based on image information of the pattern imaged in the imaging step ;
By the height measuring unit for measuring the height from the imaging portion to the substrate, seen including a height measurement step of measuring a plurality of times the height from the imaging portion to the substrate,
The measurement step includes
The amplitude of the vibration of the substrate is calculated based on the measurement result of the height from the imaging unit to the substrate measured by the height measurement step, and the position of the imaging unit is adjusted based on the calculated amplitude A measuring method characterized by:

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