JP6217382B2 - Substrate division method - Google Patents

Description

  The present invention relates to a substrate dividing method for dividing a substrate by laser dicing.

  Laser dicing using a laser is known as a method of dividing a sapphire substrate for each element structure after forming an element structure having a semiconductor layer on the sapphire substrate (for example, Patent Documents 1 and 2).

  Laser dicing is performed as follows. First, a sapphire substrate is irradiated with a laser along a line to be divided, and a dot-shaped modified portion and a crack continuous therewith are generated inside the sapphire substrate. Next, a force is applied by a push blade along the planned division line, and the sapphire substrate is divided along the planned division line starting from the crack.

JP 2005-159379 A JP 2008-112754 A JP2011-258717A

  In the laser dicing of the substrate, there is a problem that a deviation occurs between the planned dividing line and the actual dividing position during braking, or chipping of the element end portion occurs. These problems are not described in Patent Documents 1 to 3.

  SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a substrate dividing method in which the deviation of the dividing position and the chipping of the element end portion are suppressed during braking by laser dicing of the substrate.

One of the inventions different from the present invention is that a modified portion is formed on a substrate by irradiating a laser along the planned division line, and then the substrate is divided along the planned division line by applying force to the substrate. In the substrate dividing method, when the substrate is divided by applying a force, the substrate has two support portions arranged at intervals along the line to be divided as a cradle for placing the substrate The substrate dividing method is characterized in that the stress distribution is symmetric across the planned dividing line by shifting the position where the force is applied from the planned dividing line to the undivided side.

  Another aspect of the present invention is a substrate division in which a modified portion is formed on a substrate by irradiating a laser along the planned division line, and then the substrate is divided along the planned division line by applying a force to the substrate. In the method, when dividing the substrate by applying force, as a pedestal for placing the substrate, using a support having two support portions arranged in a line-like manner along the planned division line, The substrate dividing method is characterized in that the stress distribution is symmetric across the planned dividing line by shifting the position of the supporting part on the dividing side to the undivided side.

One of the inventions different from the present invention is that a modified portion is formed on a substrate by irradiating a laser along the planned division line, and then the substrate is divided along the planned division line by applying force to the substrate. In the substrate dividing method, when the substrate is divided by applying a force, the substrate has two support portions arranged at intervals along the line to be divided as a cradle for placing the substrate The center of gravity of the divided area, which is the area on the divided side of the undivided substrate line of the undivided substrate, is scheduled to be divided rather than the center of rotation of the force acting on the divided side area and the drag force from the support portion. By controlling at least one of the position where the force is applied and the position of the support portion so that they are located on the far side of the line, the stress distribution is made symmetrical across the planned division line. Substrate It is a method.

  Another aspect of the present invention is a substrate division in which a modified portion is formed on a substrate by irradiating a laser along the planned division line, and then the substrate is divided along the planned division line by applying a force to the substrate. In the method, when dividing the substrate by applying force, as a pedestal for placing the substrate, using a support having two support portions arranged in a line-like manner along the planned division line, The substrate dividing method is characterized in that the height of the two support portions on which the substrate is placed is made different from each other so that the substrate is inclined vertically downward from the undivided side toward the dividing side.

  In the present invention, a c-plane sapphire substrate may be used as the substrate. When using a c-plane sapphire substrate, it is preferable to divide along the m-axis direction after dividing along the a-axis direction of sapphire. The shift of the division position can be further reduced.

  The substrate dividing method of the present invention can be used when dividing a substrate in a method for manufacturing a light-emitting element made of a group III nitride semiconductor.

  According to the present invention, when a substrate is divided by applying a force in laser dicing, the stress applied to the left and right substrates is equal across the line to be divided. As a result, the shift of the division position is suppressed. In addition, it becomes difficult for the substrate on the division side to rotate after the division, and chipping of the element end portion can be suppressed.

FIG. 6 shows a manufacturing process of the light-emitting element of Example 1. The figure which showed the relationship between the surface orientation of the sapphire substrate 10, and arrangement | positioning of the element structure 11. FIG. FIG. 3 is a diagram for explaining the principle of positional deviation reduction according to the first embodiment. The graph which showed the relationship between shift amount (DELTA) x1 and the shift | offset | difference of a division position. The graph which showed the relationship between shift amount (DELTA) x1 and the shift | offset | difference of a division position. The graph which showed the relationship between shift amount (DELTA) x1 and the shift | offset | difference of a division position. The graph which showed the relationship between shift amount (DELTA) x1 and the shift | offset | difference of a division position. FIG. 6 shows part of a manufacturing process for the light-emitting element of Example 2; FIG. 6 is a diagram for explaining the principle of positional deviation reduction according to the second embodiment. FIG. 6 shows part of a manufacturing process for the light-emitting element of Example 3; FIG. 10 is a diagram for explaining the principle of positional deviation reduction according to the third embodiment.

  Specific examples of the present invention will be described below, but the present invention is not limited to the examples.

  Example 1 is a method for manufacturing a light-emitting element, which is separated into individual light-emitting elements by laser dicing. FIG. 1 is a diagram illustrating a manufacturing process of the light emitting device of Example 1. FIG. Hereinafter, the manufacturing process of the light emitting device will be described with reference to FIG.

  First, a semiconductor layer and an electrode made of a group III nitride semiconductor are formed on a sapphire substrate 10 having a c-plane of 3 inches in diameter as a main surface, thereby forming a plurality of element structures 11 that function as light emitting elements (FIG. 1 ( a)). Each element structure 11 is partitioned by element separation grooves 12 having a rectangular lattice pattern. The element structure 11 is rectangular in plan view, and its long side is aligned with the a-axis direction of the sapphire substrate 10 and its short side is aligned with the m-axis direction (see FIG. 2). The element structure 11 may be square, and in that case, one side is matched with the a-axis direction of the sapphire substrate 10.

  The element isolation groove 12 does not necessarily have a depth until the sapphire substrate 10 is exposed. The element isolation groove 12 is formed to have such a depth that each element is electrically isolated and does not interfere with the subsequent braking process. It is enough if it is done.

  Next, the holding tape 13 is bonded to the sapphire substrate 10 surface side (electrode surface side). The holding tape 13 is to hold the divided portions. By the holding by the holding tape 13, for example, the position of the sapphire substrate 10 is not shifted after being divided along the long side direction of the element structure 11 and before being divided along the short side direction.

  Next, the sapphire substrate 10 is placed on a stage (not shown). The element structure 11 side is the stage side. The stage is capable of moving the sapphire substrate 10 three-dimensionally. Then, by moving the sapphire substrate 10 by the stage, the laser is scanned and irradiated along the pattern of the element isolation groove 12 from the back surface side of the sapphire substrate 10. More specifically, the irradiation is performed on the center of the element isolation trench 12 in the width direction. A line along the pattern of the element isolation groove 12 through this central portion is a line (referred to as a division planned line L) that divides the substrate later. The laser is a pulse laser having a wavelength of 1040 nm, a pulse width of 800 fs, a pulse period of 100 kHz, and an output of 0.15 W. As the laser, a nanosecond laser such as a YAG laser, a picosecond laser, a femtosecond laser, or the like can be used, and a laser having a wavelength that transmits the sapphire substrate 10 can be used. Further, the laser is irradiated through the condensing lens, and the condensing lens is controlled to condense at a predetermined position inside the sapphire substrate 10. Note that a stage that can move two-dimensionally in a horizontal plane is used, and laser scanning in the vertical direction may be performed by controlling the position of the condenser lens.

  By this laser irradiation, the modified portion 17 is formed in the sapphire substrate 10 at a position where the laser is focused (see FIG. 1B). The modified portion 17 is a portion where the sapphire substrate 10 which is a crystal is amorphous. The reforming portion 17 has a dot shape, and the dots are arranged in a lattice pattern of the element isolation grooves 12 by scanning with a laser. The shape of the dot is an elongated spheroid shape in which an ellipse whose major axis is perpendicular to the main surface of the sapphire substrate 10 is rotated about the major axis. The length of the major axis is 16 to 25 μm, and the length of the minor axis is 2 to 5 μm.

  As the modified portion 17 is formed, cracks 14 are generated from the modified portion 17 in the direction perpendicular to the main surface of the sapphire substrate 10 and in the horizontal direction along the lattice pattern. The crack 14 facilitates subsequent division of the sapphire substrate 10.

  The laser wavelength is desirably 532 to 1055 μm, the pulse width is 400 fs to 600 ps, and the output is 0.1 to 0.5 W. By setting it as these ranges, formation of the modification part 17 becomes easy and the division | segmentation of the sapphire substrate 10 becomes easier. More preferably, the laser wavelength is 1035 to 1055 μm, the pulse width is 400 to 1200 fs, and the output is 0.1 to 0.2 W.

  In addition, laser irradiation is performed by changing the depth of light collection into three stages. The depth is controlled by moving an objective lens for condensing and irradiating the laser in the direction perpendicular to the substrate. First, in a state where light is condensed at a position of depth D1 (μm), scanning is performed along the planned division line L, thereby forming the first reforming portion 17a. Thereafter, the second modified portions 17b and 17c are formed by scanning along the planned division line L so as to be condensed at positions of depths D2 and D3 (μm). The depth is defined by the distance from the rear surface of the semiconductor layer (the surface on the sapphire substrate 10 side) to the modified portion 17. As described above, the first modified portion 17a, the second modified portion 17b, and c are formed by scanning the laser at a depth of three stages, so that the crack 14 continues in a direction perpendicular to the main surface of the sapphire substrate 10. Therefore, the division of the sapphire substrate 10 becomes easier.

  Note that the laser irradiation depth is not limited to three levels as described above, but may be one level, two levels, or four or more levels. When the sapphire substrate 10 is sufficiently thin, it may be one step, or when the sapphire substrate 10 is thick, the depth may be changed to be four or more steps.

  The difference in depth between the first reforming part 17a and the second reforming part 17b is preferably 30 to 36 μm. This is because the cracks 14 are likely to continue in the direction perpendicular to the main surface of the substrate, and the sapphire substrate 10 can be divided more easily.

  The dot interval of the first modified portion 17a is 5 μm, and the dot interval of the second modified portions 17b and 17c is also 5 μm. As a result, the cracks 14 are easily continuous, so that the sapphire substrate 10 can be divided more easily.

  The dot intervals of the first reforming unit 17a, the second reforming unit 17b, and c are not limited to the above values, but are preferably set to the following values. The dot interval is desirably 3 to 10 μm for the first modified portion 17a, and desirably 3 to 10 μm for the second modified portions 17b and 17c. By setting the dot interval in such a range, the cracks 14 are likely to continue in the direction parallel to the main surface of the sapphire substrate 10, and the sapphire substrate 10 can be more easily divided.

  In addition, the order of scanning the laser along the division line L at three levels of depth may be an arbitrary order. However, it is desirable to scan in the long side direction first. For example, the long side direction may be scanned in a stripe shape at the depth D1, the long side direction may be scanned in the stripe shape at the depths D2 and D3, and then the short side direction may be scanned in the same manner. Further, after scanning in the depth direction in the order of depths D1, D2, and D3 for a column in the long side direction, scanning in other columns is repeated to scan in stripes of depths D1, D2, and D3, Thereafter, scanning may be similarly performed in the short side direction. In the above two examples, the scanning may be performed at the depth D1 after scanning at the depth D2 or D3 first.

  Next, a separator film 19 is pasted on the entire back surface of the sapphire substrate 10 (the surface opposite to the element structure 11 side) (see FIG. 1C). The separator film 19 is used to protect the element structure 11 and the sapphire substrate 10 during braking in the next process, and to prevent element displacement from occurring until all regions are divided.

  Next, the sapphire substrate 10 is placed on the cradle 15 for braking. The cradle 15 has two support portions 15 (a support portion 15a and a support portion 15b). The support portion 15a supports the divided side region 10a of the substrate 10, and the support portion 15b supports the undivided side region 10b of the substrate 10. ing. Here, the divided-side region 10a refers to a region on the divided side across the planned division line L among the regions of the substrate 10 that have not been divided yet. The undivided side region 10b is a region on the divided side across the planned division line L among the regions of the substrate 10 that are not yet divided. The support portion 15a and the support portion 15b are spaced apart from each other, and a line-shaped space 16 is opened. The space 16 has a width of 1. divided width (the length of the short side when dividing in the direction along the long side of the element structure 11 and the length of the long side when dividing in the direction along the short side). 2 to 1.8 times. The sapphire substrate 10 is placed so that the division line L comes to the center in the width direction of the space 16. Further, the back surface side of the sapphire substrate 10 is placed toward the receiving table 15 side.

  With the sapphire substrate 10 placed in this manner, the pressing blade 18 is exposed to the bottom surface of the element isolation groove 12 and is pressed against a predetermined shift amount Δx1 from the division planned line L to mechanically A large force is applied (see FIG. 1D).

  Here, the shift amount Δx1 is a value such that the distribution of stress received by the substrate 10 from the pressing blade 18 is symmetric with respect to the division line L. The shift amount Δx1 depends on the thickness and area of the substrate 10, the area of the element structure 11, and the like, and is controlled in consideration of these. The shift amount Δx1 is defined as a positive value for shifting from the planned division line L toward the division side region 10a, and a negative value for shifting from the planned division line L toward the non-division side region 10b.

  Then, the sapphire substrate 10 is divided by pressing the pressing blade 18 against the sapphire substrate 10 exposed on the bottom surface of the element isolation groove 12 and applying a mechanical force, thereby separating each light emitting element. At this time, in the sapphire substrate 10, the cracks 14 accompanying the formation of the modified portion 17 run along the lattice pattern of the element isolation grooves 12 in the direction perpendicular to the main surface. Therefore, the sapphire substrate 10 is easily divided in the direction perpendicular to the main surface starting from the crack 14. This division is performed on each scheduled division line L in the long side direction, and then performed on each scheduled division line L on the short side. In addition, the position movement of the pressing blade 18 to each division | segmentation scheduled line L can be performed by sending out the board | substrate 10 sequentially with a stage. As described above, the light emitting elements of Example 1 are individually divided.

  Here, at the time of division, the force is applied by shifting the position where the force is applied by the push blade 18 from the planned division line L by an amount Δx1, so that the deviation between the actual division position and the planned division line L is reduced. . Further, rotation of the divided substrate 10 during the division is suppressed, and chipping of the end portion of the element structure 11 is reduced.

  The reason will be described with reference to FIG. First, the case where force F is applied along the division line L by the push blade 18 will be described. As shown in FIG. 3A, the divided-side region 10a and the undivided-side region 10b receive drags Ra and Rb from the support portions 15a and 15b, respectively. The center of gravity Ga of the divided region 10a of the substrate 10 and the rotation center P1a of the force F and the drag Ra from the pressing blade 18 are substantially the same position. Therefore, the division | segmentation side area | region 10a is an unstable state which is easy to rotate immediately after division | segmentation. Therefore, immediately after the division, the divided area of the substrate 10 rotates, while the undivided side area 10b tries to return to the original state, and the divided side area 10a and the undivided side area 10b collide with each other. The edge may be chipped.

  On the other hand, the center of gravity Gb of the undivided side region 10b is on the side farther from the division planned line L than the rotation center P1b of the force F and the drag force Rb from the pressing blade 18. Therefore, it is in a stable state immediately after the division. Therefore, the stress distribution in the substrate 10 is not uniform between the divided-side region 10a side and the undivided-side region 10b side. As a result, the actual division position is shifted from the planned division line L.

  Next, a case where the force F is applied by shifting the position where the force is applied by the push blade 18 from the planned division line L by Δx1 will be described. In this case, as shown in FIG. 3B, the center of gravity Ga is on the far side from the division line L with respect to the rotation center P2a of the force F and the drag Ra from the push blade 18. The center of gravity Gb is also on the side farther from the division line L than the rotation center P2b of the force F and the drag force Rb. Therefore, both the divided side area 10a and the undivided side area 10b are in a stable state immediately after the division. Since the divided-side region 10a does not rotate immediately after the division, the chipping of the end portion of the element structure 11 is reduced. Further, the stress distribution in the divided side region 10a and the undivided side region 10b in the substrate 10 is uniform and symmetrical with respect to the division planned line L. Therefore, it is possible to divide without shifting from the scheduled division line L.

  4 to 7 are graphs showing the relationship between the shift amount Δx1 of the position of the pressing blade 18 from the planned division line L and the shift amount of the divided position from the planned division line L. The deviation amount of the division position is indicated by an absolute value.

  4 and 5, the element structure 11 is a rectangle having a long side of 700 μm and a short side of 270 μm, the thickness of the substrate 10 is 140 μm, FIG. 4 is an a-axis direction (a direction along the long side), and FIG. This is a case of division in the direction along the short side.

  As shown in FIGS. 4 and 5, the shift amount of the division position with respect to the shift amount Δx1 changes in a quadratic curve with Δx1 having a minimum value in the vicinity of −10 μm to −5 μm. The minimum value is approximately 0.2 μm. Therefore, by setting Δx1 in the range of −10 to −5 μm, that is, by setting the position of the pressing blade 18 to the position of 5 to 10 μm from the planned division line L to the undivided side region 10b side, It can be seen that can be greatly reduced.

  6 and 7 show the case where the element structure 11 is a square having a side of 1000 μm, the thickness of the substrate is 375 μm, FIG. 6 is divided in the a-axis direction, and FIG. 7 is divided in the m-axis direction.

  As shown in FIGS. 6 and 7, as in FIGS. 4 and 5, the shift amount of the dividing position changes in a quadratic curve, and it is understood that the vicinity of −30 to −20 μm is a minimum value. Therefore, it can be seen that by setting the position of the pressing blade 18 to the position of 20 to 30 μm from the planned division line L to the undivided side region 10b side, the deviation of the divided position is greatly reduced.

  4 to 7, it was found that the shift amount Δx1 that minimizes the shift of the division position increases as the substrate 10 becomes thicker.

  4-7, it has been found that the change in the shift of the division position is larger when divided in the a-axis direction than when divided in the m-axis direction. This is considered to be due to the fact that the sapphire substrate 10 is more easily divided on the m-plane than on the a-plane.

  When dividing in the a-axis direction and the m-axis direction, the one to be divided later tends to have a large positional deviation because one direction is divided first. Therefore, when the sapphire substrate 10 is divided by applying a force with the pressing blade 18, the position of the pressing blade 18 is shifted by Δx1 and division in the a-axis direction is performed first to reduce the deviation of the dividing position as much as possible. It was found that it is preferable to divide in the m-axis direction because the deviation of the dividing position can be further reduced.

  As described above, according to the method for manufacturing the light-emitting element of Example 1, it is possible to reduce the shift of the split position of the sapphire substrate 10 in breaking and the chipping of the split-side end portion of the element structure 11.

  FIG. 8 is a diagram showing a part of the manufacturing process of the light emitting device of Example 2. Since the process up to FIG. 1C in the manufacturing process of the light emitting device of Example 1 is the same, it is omitted.

  In the manufacturing process of the light emitting element of Example 2, the sapphire substrate 10 is placed on the cradle 15 for braking after the process of FIG. Here, with reference to the mounting position of the first embodiment, the support portion 15a that supports the divided region 10a is set to a position that is shifted by Δx2 in the horizontal direction toward the division line L. This is equivalent to shortening the interval between the support portions 15a and 15b and shifting the substrate 10 so that the divided region 10a is located on the support portion 15a side from the center.

  With the sapphire substrate 10 placed in this manner, the pressing blade 18 is exposed to the bottom surface of the element isolation groove 12 and is pressed against the position of the division line L to apply mechanical force (FIG. 8). Here, the shift amount Δx2 of the support portion 15a is a value such that the distribution of stress received by the substrate 10 from the pressing blade 18 is symmetric with respect to the division line L. The shift amount Δx2 depends on the thickness and area of the substrate 10, the area of the element structure 11, and the like, and is controlled in consideration of these.

  Then, by applying a force from the pressing blade 18 to the sapphire substrate 10, the sapphire substrate 10 is divided in the same manner as in the first embodiment, thereby separating each light emitting element. Here, during the division, the force is applied by shifting the position of the support portion 15a toward the planned division line L by Δx2, so that the deviation between the actual division position and the planned division line L is reduced. Further, rotation of the divided substrate 10 during the division is suppressed, and chipping of the end portion of the element structure 11 is reduced.

  The reason is the same as in the first embodiment. That is, by shifting the support portion 15a toward the planned division line L side by an amount Δx2, the center of gravity Ga of the division-side region 10a is more than the rotation center P3a between the force F from the push blade 18 and the drag Ra from the support portion 15a. It is on the side far from the division line L (see FIG. 9). On the other hand, the undivided side region 10b is the same as in the first embodiment because the position of the support portion 15b is not changed. As a result, the stress distribution is uniform between the divided-side region 10a and the undivided-side region 10b, and the shift of the divided position and the chipping of the element end are reduced.

  FIG. 10 is a diagram showing a part of the manufacturing process of the light-emitting element of Example 3. Since the process up to FIG. 1C in the manufacturing process of the light emitting device of Example 1 is the same, it is omitted.

  In the manufacturing process of the light emitting element of Example 3, the sapphire substrate 10 is placed on the cradle 15 for braking after the process of FIG. Here, the height of the support portion 15b that supports the undivided side region 10b is set to be Δh higher than the height of the support portion 15a. Other mounting positions are the same as those in the first embodiment. Thereby, the sapphire substrate 10 is in a state having an inclination vertically downward from the undivided side region 10b side toward the divided side region 10a. Then, θa> θb, where θa is an angle formed by the pressing blade 18 and the main surface of the divided side region 10a, and θb is an angle formed by the main surface of the pressing blade 18 and the undivided side region 10b (see FIG. 10). ).

  The height difference Δh of the support portion 15 is a value such that θa> θb immediately after being divided by the force of the pressing blade 18. The height difference Δh is an amount that depends on the thickness and area of the substrate 10, the area of the element structure 11, and the like, and is controlled in consideration of these.

  With the sapphire substrate 10 placed in this manner, the pressing blade 18 is exposed to the bottom surface of the element isolation groove 12 and is pressed against the position of the division line L to apply mechanical force (FIG. 10). And the sapphire substrate 10 is divided | segmented similarly to Example 1, and it is made to isolate | separate for every light emitting element by this. Here, since the height difference Δh is designed as described above, it is possible to reduce the shift of the division position and the chip of the element end.

  The reason will be described with reference to FIG. As described in the first embodiment, the divided-side area 10a is more easily rotated than the undivided-side area 10b. Therefore, when the height difference Δh of the support portion 15 is set to 0, θa and θb are equal before the division, and the division side region 10a rotates vertically downward immediately after the division and θa decreases. Therefore, θb is larger than θa (see FIG. 11A). Such rotation causes a shift in the division position. Further, if the rotated divided side region 10a rotates in the reverse direction to return to the original position, it may collide with the undivided side region 10b to cause chipping at the end.

  Therefore, the height of the support portion 15b is set higher by Δh than the height of the support portion 15a. At this time, since the sapphire substrate 10 is inclined with respect to the horizontal direction, θa> θb is satisfied before the division. In other words, the decrease in θa due to the rotational deviation of the divided area 10a immediately after the division is offset by making θa larger than θb before the division. Accordingly, if Δh is designed to an appropriate value, θa> θb can be obtained immediately after the division (FIG. 11B). As a result, the rotation of the divided side region 10a is suppressed immediately after the division, and the shift of the division position and the chipping of the end can be reduced.

  In the first to third embodiments, the light emitting element is formed as the element structure 11 on the sapphire substrate 10, but the present invention is not limited to this, and can be applied to the case where an arbitrary semiconductor element is formed. it can. For example, the present invention can also be applied when forming semiconductor elements such as FETs, HFETs, and diodes.

  Moreover, although Examples 1-3 formed the element structure which has a semiconductor layer which consists of a group III nitride semiconductor on a sapphire substrate, other than a sapphire substrate may be used for a substrate, and on the substrate The semiconductor layer to be formed may be other than the group III nitride semiconductor.

  Further, in the first embodiment, the pressing blade 18 is shifted, and in the second embodiment, the stress distribution on the divided side and the undivided side is equalized with the planned dividing line L interposed therebetween. The stress distribution may be equalized by shifting both the pressing blade 18 and the cradle. Further, a method of changing the height of the left and right cradle as in the third embodiment may be combined with the first and second embodiments.

  The present invention can be used for manufacturing a semiconductor element such as a light emitting element, and can be used for improving the yield.

DESCRIPTION OF SYMBOLS 10: Board | substrate 10a: Division | segmentation side area | region 10b: Undivided side area | region 11: Element structure 12: Element isolation groove 13: Holding tape 14: Crack 15: Base 15a, b: Support part 17: Modification part 17a: 1st revision Material part 17b: Second reforming part 18: Press blade 19: Separator film L: Line to be divided

Claims (5)

In the substrate dividing method for dividing the substrate along the division line by forming a modified portion on the substrate by irradiating the laser along the division line and then applying force to the substrate,
When the substrate is divided by applying a force, a pedestal on which the substrate is placed is a pedestal having two support portions arranged at intervals along a line to be divided. By making the position of the support part on the side shifted to the undivided side, the stress distribution is made symmetrical across the division planned line,
A substrate dividing method characterized by the above. In the substrate dividing method for dividing the substrate along the division line by forming a modified portion on the substrate by irradiating the laser along the division line and then applying force to the substrate,
When dividing the substrate by applying force,
As a cradle for placing the substrate, using a support having two support portions arranged in a line-like manner along a planned division line,
Inclining the substrate vertically downward from the undivided side toward the divided side by making the heights of the two support portions on which the substrate is placed different from each other,
A substrate dividing method characterized by the above. 3. The substrate dividing method according to claim 1, wherein the substrate is a c-plane sapphire substrate, and is divided along the m-axis direction after being divided along the a-axis direction of sapphire. A method for manufacturing a light-emitting element made of a group III nitride semiconductor, wherein the substrate is divided using the substrate dividing method according to any one of claims 1 to 3 . 5. The light-emitting element made of a group III nitride semiconductor according to claim 4 , wherein the substrate is placed with a surface opposite to a side on which an element structure is formed facing the cradle side. Manufacturing method.

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