JP6216483B2 - 混合器、真空処理装置 - Google Patents

混合器、真空処理装置 Download PDF

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Publication number
JP6216483B2
JP6216483B2 JP2017527376A JP2017527376A JP6216483B2 JP 6216483 B2 JP6216483 B2 JP 6216483B2 JP 2017527376 A JP2017527376 A JP 2017527376A JP 2017527376 A JP2017527376 A JP 2017527376A JP 6216483 B2 JP6216483 B2 JP 6216483B2
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Japan
Prior art keywords
gas
cylinder
main body
mixing container
mixer
Prior art date
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JP2017527376A
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English (en)
Japanese (ja)
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JPWO2017061498A1 (ja
Inventor
慎太郎 田宮
慎太郎 田宮
洋介 神保
洋介 神保
阿部　洋一
洋一 阿部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
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Ulvac Inc
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45512—Premixing before introduction in the reaction chamber
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F23/00—Mixing according to the phases to be mixed, e.g. dispersing or emulsifying
    • B01F23/10—Mixing gases with gases
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F23/00—Mixing according to the phases to be mixed, e.g. dispersing or emulsifying
    • B01F23/10—Mixing gases with gases
    • B01F23/19—Mixing systems, i.e. flow charts or diagrams; Arrangements, e.g. comprising controlling means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F35/00—Accessories for mixers; Auxiliary operations or auxiliary devices; Parts or details of general application
    • B01F35/50—Mixing receptacles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Seeds, Soups, And Other Foods (AREA)
JP2017527376A 2015-10-06 2016-10-05 混合器、真空処理装置 Active JP6216483B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2015198275 2015-10-06
JP2015198275 2015-10-06
PCT/JP2016/079681 WO2017061498A1 (ja) 2015-10-06 2016-10-05 混合器、真空処理装置

Publications (2)

Publication Number Publication Date
JP6216483B2 true JP6216483B2 (ja) 2017-10-18
JPWO2017061498A1 JPWO2017061498A1 (ja) 2017-10-19

Family

ID=58487766

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017527376A Active JP6216483B2 (ja) 2015-10-06 2016-10-05 混合器、真空処理装置

Country Status (5)

Country Link
JP (1) JP6216483B2 (zh)
KR (1) KR102159868B1 (zh)
CN (1) CN108138321B (zh)
TW (1) TWI667367B (zh)
WO (1) WO2017061498A1 (zh)

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01129973A (ja) * 1987-11-13 1989-05-23 Hitachi Ltd 反応処理装置
JP2508717Y2 (ja) * 1989-08-31 1996-08-28 株式会社島津製作所 成膜装置のガス導入用ミキシングチャンバ
US5525780A (en) * 1993-08-31 1996-06-11 Texas Instruments Incorporated Method and apparatus for uniform semiconductor material processing using induction heating with a chuck member
JPH10150030A (ja) 1996-11-19 1998-06-02 Kokusai Electric Co Ltd 成膜装置
JP4570732B2 (ja) 2000-05-25 2010-10-27 株式会社アルバック ガス噴出装置及び真空処理装置
JP2003226976A (ja) * 2002-02-04 2003-08-15 Tokura Kogyo Kk ガスミキシング装置
US7045060B1 (en) * 2002-12-05 2006-05-16 Inflowsion, L.L.C. Apparatus and method for treating a liquid
CN1781586A (zh) * 2004-11-30 2006-06-07 沈阳化工学院 单管多旋流体混合装置及其混合操作方法
JP2008114097A (ja) * 2005-02-22 2008-05-22 Hoya Advanced Semiconductor Technologies Co Ltd ガス混合器、成膜装置、及び薄膜製造方法
JP4895167B2 (ja) * 2006-01-31 2012-03-14 東京エレクトロン株式会社 ガス供給装置，基板処理装置，ガス供給方法
EP2045002A1 (en) * 2007-10-02 2009-04-08 Ineos Europe Limited Mixing apparatus
WO2010042883A2 (en) * 2008-10-10 2010-04-15 Alta Devices, Inc. Concentric showerhead for vapor deposition
WO2010083151A2 (en) * 2009-01-13 2010-07-22 Avl North America Inc. Ejector type egr mixer
CN101537319B (zh) * 2009-04-30 2011-09-14 赵纪仲 可调式射流混合装置及其混流调节方法
JP5370027B2 (ja) * 2009-09-10 2013-12-18 Ｊｆｅエンジニアリング株式会社 流体混合方法及び流体混合装置
KR101553453B1 (ko) * 2010-06-14 2015-09-15 가부시키가이샤 알박 성막 장치
NL2006526C2 (en) * 2011-04-01 2012-10-02 Heatmatrix Group B V Device and method for mixing two fluids.
JP5871266B2 (ja) * 2012-03-13 2016-03-01 国立研究開発法人産業技術総合研究所 二酸化炭素を混合して低粘性化させた溶融樹脂の高圧微粒化方法及び樹脂微粒子の製造方法
CN202497835U (zh) * 2012-03-22 2012-10-24 淮南舜化机械制造有限公司 气体混合装置
US10232324B2 (en) * 2012-07-12 2019-03-19 Applied Materials, Inc. Gas mixing apparatus
CN203955054U (zh) * 2014-06-24 2014-11-26 浙江深度能源技术有限公司 Scr脱硝装置的双介质混合器

Also Published As

Publication number Publication date
WO2017061498A1 (ja) 2017-04-13
KR102159868B1 (ko) 2020-09-24
KR20180050367A (ko) 2018-05-14
CN108138321A (zh) 2018-06-08
TWI667367B (zh) 2019-08-01
JPWO2017061498A1 (ja) 2017-10-19
TW201726969A (zh) 2017-08-01
CN108138321B (zh) 2020-03-20

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