JP6207151B2 - ドライ・フィルム・フォトレジストを使用したダイ上部への蛍光体の堆積 - Google Patents

ドライ・フィルム・フォトレジストを使用したダイ上部への蛍光体の堆積 Download PDF

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JP6207151B2
JP6207151B2 JP2012282291A JP2012282291A JP6207151B2 JP 6207151 B2 JP6207151 B2 JP 6207151B2 JP 2012282291 A JP2012282291 A JP 2012282291A JP 2012282291 A JP2012282291 A JP 2012282291A JP 6207151 B2 JP6207151 B2 JP 6207151B2
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phosphor
template
led
photoresist layer
die
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Japanese (ja)
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JP2013140964A (ja
JP2013140964A5 (enExample
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ゼクン・メイ
シャンタオ・ヤン
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エルイーディエンジン・インコーポレーテッド
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8516—Wavelength conversion means having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer or wavelength conversion layer with a concentration gradient

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  • Led Device Packages (AREA)
  • Led Devices (AREA)
  • Electroluminescent Light Sources (AREA)
JP2012282291A 2011-12-28 2012-12-26 ドライ・フィルム・フォトレジストを使用したダイ上部への蛍光体の堆積 Active JP6207151B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/338,936 2011-12-28
US13/338,936 US8399268B1 (en) 2011-12-28 2011-12-28 Deposition of phosphor on die top using dry film photoresist

Publications (3)

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JP2013140964A JP2013140964A (ja) 2013-07-18
JP2013140964A5 JP2013140964A5 (enExample) 2016-02-04
JP6207151B2 true JP6207151B2 (ja) 2017-10-04

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JP2012282291A Active JP6207151B2 (ja) 2011-12-28 2012-12-26 ドライ・フィルム・フォトレジストを使用したダイ上部への蛍光体の堆積

Country Status (5)

Country Link
US (1) US8399268B1 (enExample)
EP (1) EP2618390B1 (enExample)
JP (1) JP6207151B2 (enExample)
CN (1) CN103187516A (enExample)
TW (1) TWI511336B (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090309114A1 (en) * 2008-01-16 2009-12-17 Luminus Devices, Inc. Wavelength converting light-emitting devices and methods of making the same
US8993358B2 (en) 2011-12-28 2015-03-31 Ledengin, Inc. Deposition of phosphor on die top by stencil printing
US10429030B2 (en) 2010-04-08 2019-10-01 Ledengin, Inc. Hybrid lens system incorporating total internal reflection lens and diffuser
US8858022B2 (en) 2011-05-05 2014-10-14 Ledengin, Inc. Spot TIR lens system for small high-power emitter
US9029879B2 (en) 2011-12-28 2015-05-12 Ledengin, Inc. Phosphor cap for LED die top and lateral surfaces
US9269697B2 (en) 2011-12-28 2016-02-23 Ledengin, Inc. System and methods for warm white LED light source
US9299687B2 (en) 2012-10-05 2016-03-29 Bridgelux, Inc. Light-emitting assemblies comprising an array of light-emitting diodes having an optimized lens configuration
DE102013211634A1 (de) * 2013-06-20 2014-12-24 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines Konversionselements
CN104752589A (zh) * 2013-12-31 2015-07-01 晶能光电（江西）有限公司 一种晶圆级白光led芯片的制备方法及其实现装置
DE102014116076A1 (de) * 2014-11-04 2016-05-04 Osram Opto Semiconductors Gmbh Verfahren zum Aufbringen eines Materials auf einer Oberfläche
US10595417B2 (en) * 2016-07-18 2020-03-17 Verily Life Sciences Llc Method of manufacturing flexible electronic circuits having conformal material coatings
US10274164B2 (en) * 2016-10-21 2019-04-30 Signify Holding B.V. Lighting device comprising a plurality of different light sources with similar off-state appearance

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10163526A (ja) * 1996-11-27 1998-06-19 Matsushita Electron Corp 発光素子及び発光ダイオード
US6650044B1 (en) * 2000-10-13 2003-11-18 Lumileds Lighting U.S., Llc Stenciling phosphor layers on light emitting diodes
US6756186B2 (en) * 2002-03-22 2004-06-29 Lumileds Lighting U.S., Llc Producing self-aligned and self-exposed photoresist patterns on light emitting devices
US6682331B1 (en) * 2002-09-20 2004-01-27 Agilent Technologies, Inc. Molding apparatus for molding light emitting diode lamps
KR20090115803A (ko) * 2007-02-13 2009-11-06 쓰리엠 이노베이티브 프로퍼티즈 컴파니 렌즈를 갖는 ｌｅｄ 소자 및 그 제조 방법
TWI396298B (zh) * 2007-08-29 2013-05-11 Everlight Electronics Co Ltd 發光半導體元件塗佈螢光粉的方法及其應用
US7939350B2 (en) * 2008-01-03 2011-05-10 E. I. Du Pont De Nemours And Company Method for encapsulating a substrate and method for fabricating a light emitting diode device
JP5324821B2 (ja) * 2008-05-26 2013-10-23 スタンレー電気株式会社 半導体装置の製造方法
US20100181582A1 (en) * 2009-01-22 2010-07-22 Intematix Corporation Light emitting devices with phosphor wavelength conversion and methods of manufacture thereof
US7994531B2 (en) * 2009-04-02 2011-08-09 Visera Technologies Company Limited White-light light emitting diode chips and fabrication methods thereof
JP5308988B2 (ja) * 2009-10-23 2013-10-09 スタンレー電気株式会社 Ｌｅｄ光源装置の製造方法
JP2011166055A (ja) * 2010-02-15 2011-08-25 Citizen Holdings Co Ltd 半導体発光装置の製造方法
US8507940B2 (en) * 2010-04-05 2013-08-13 Taiwan Semiconductor Manufacturing Company, Ltd. Heat dissipation by through silicon plugs
US8841145B2 (en) * 2010-12-08 2014-09-23 Bridgelux, Inc. System for wafer-level phosphor deposition
US8482020B2 (en) * 2010-12-08 2013-07-09 Bridgelux, Inc. System for wafer-level phosphor deposition

Also Published As

Publication number Publication date
EP2618390B1 (en) 2017-09-13
JP2013140964A (ja) 2013-07-18
TWI511336B (zh) 2015-12-01
CN103187516A (zh) 2013-07-03
TW201334232A (zh) 2013-08-16
EP2618390A1 (en) 2013-07-24
US8399268B1 (en) 2013-03-19

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