TWI511336B - 使用乾膜光阻劑將磷光質沉積於晶粒頂部之技術 - Google Patents

使用乾膜光阻劑將磷光質沉積於晶粒頂部之技術 Download PDF

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Publication number
TWI511336B
TWI511336B TW101148675A TW101148675A TWI511336B TW I511336 B TWI511336 B TW I511336B TW 101148675 A TW101148675 A TW 101148675A TW 101148675 A TW101148675 A TW 101148675A TW I511336 B TWI511336 B TW I511336B
Authority
TW
Taiwan
Prior art keywords
template
phosphor
led
openings
photoresist layer
Prior art date
Application number
TW101148675A
Other languages
English (en)
Chinese (zh)
Other versions
TW201334232A (zh
Inventor
梅澤群
閻先濤
Original Assignee
硅谷光擎股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 硅谷光擎股份有限公司 filed Critical 硅谷光擎股份有限公司
Publication of TW201334232A publication Critical patent/TW201334232A/zh
Application granted granted Critical
Publication of TWI511336B publication Critical patent/TWI511336B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8516—Wavelength conversion means having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer or wavelength conversion layer with a concentration gradient

Landscapes

  • Led Device Packages (AREA)
  • Led Devices (AREA)
  • Electroluminescent Light Sources (AREA)
TW101148675A 2011-12-28 2012-12-20 使用乾膜光阻劑將磷光質沉積於晶粒頂部之技術 TWI511336B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/338,936 US8399268B1 (en) 2011-12-28 2011-12-28 Deposition of phosphor on die top using dry film photoresist

Publications (2)

Publication Number Publication Date
TW201334232A TW201334232A (zh) 2013-08-16
TWI511336B true TWI511336B (zh) 2015-12-01

Family

ID=47747291

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101148675A TWI511336B (zh) 2011-12-28 2012-12-20 使用乾膜光阻劑將磷光質沉積於晶粒頂部之技術

Country Status (5)

Country Link
US (1) US8399268B1 (enExample)
EP (1) EP2618390B1 (enExample)
JP (1) JP6207151B2 (enExample)
CN (1) CN103187516A (enExample)
TW (1) TWI511336B (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090309114A1 (en) * 2008-01-16 2009-12-17 Luminus Devices, Inc. Wavelength converting light-emitting devices and methods of making the same
US10429030B2 (en) 2010-04-08 2019-10-01 Ledengin, Inc. Hybrid lens system incorporating total internal reflection lens and diffuser
US8858022B2 (en) 2011-05-05 2014-10-14 Ledengin, Inc. Spot TIR lens system for small high-power emitter
US8993358B2 (en) 2011-12-28 2015-03-31 Ledengin, Inc. Deposition of phosphor on die top by stencil printing
US9269697B2 (en) 2011-12-28 2016-02-23 Ledengin, Inc. System and methods for warm white LED light source
US9029879B2 (en) 2011-12-28 2015-05-12 Ledengin, Inc. Phosphor cap for LED die top and lateral surfaces
US9299687B2 (en) 2012-10-05 2016-03-29 Bridgelux, Inc. Light-emitting assemblies comprising an array of light-emitting diodes having an optimized lens configuration
DE102013211634A1 (de) 2013-06-20 2014-12-24 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines Konversionselements
CN104752589A (zh) * 2013-12-31 2015-07-01 晶能光电（江西）有限公司 一种晶圆级白光led芯片的制备方法及其实现装置
DE102014116076A1 (de) * 2014-11-04 2016-05-04 Osram Opto Semiconductors Gmbh Verfahren zum Aufbringen eines Materials auf einer Oberfläche
US10595417B2 (en) * 2016-07-18 2020-03-17 Verily Life Sciences Llc Method of manufacturing flexible electronic circuits having conformal material coatings
US10274164B2 (en) * 2016-10-21 2019-04-30 Signify Holding B.V. Lighting device comprising a plurality of different light sources with similar off-state appearance

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200910644A (en) * 2007-08-29 2009-03-01 Everlight Electronics Co Ltd Phosphor coating method for light emmitting semiconductor device and applications thereof
TW201037867A (en) * 2009-04-02 2010-10-16 Visera Technologies Co Ltd White-light light emitting diode chips and fabrication methods thereof
US20110073896A1 (en) * 2010-12-08 2011-03-31 Bridgelux, Inc. System for Wafer-Level Phosphor Deposition

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JPH10163526A (ja) * 1996-11-27 1998-06-19 Matsushita Electron Corp 発光素子及び発光ダイオード
US6650044B1 (en) * 2000-10-13 2003-11-18 Lumileds Lighting U.S., Llc Stenciling phosphor layers on light emitting diodes
US6756186B2 (en) * 2002-03-22 2004-06-29 Lumileds Lighting U.S., Llc Producing self-aligned and self-exposed photoresist patterns on light emitting devices
US6682331B1 (en) * 2002-09-20 2004-01-27 Agilent Technologies, Inc. Molding apparatus for molding light emitting diode lamps
WO2008100991A1 (en) * 2007-02-13 2008-08-21 3M Innovative Properties Company Led devices having lenses and methods of making same
US7939350B2 (en) * 2008-01-03 2011-05-10 E. I. Du Pont De Nemours And Company Method for encapsulating a substrate and method for fabricating a light emitting diode device
JP5324821B2 (ja) * 2008-05-26 2013-10-23 スタンレー電気株式会社 半導体装置の製造方法
US20100181582A1 (en) * 2009-01-22 2010-07-22 Intematix Corporation Light emitting devices with phosphor wavelength conversion and methods of manufacture thereof
JP5308988B2 (ja) * 2009-10-23 2013-10-09 スタンレー電気株式会社 Ｌｅｄ光源装置の製造方法
JP2011166055A (ja) * 2010-02-15 2011-08-25 Citizen Holdings Co Ltd 半導体発光装置の製造方法
US8507940B2 (en) * 2010-04-05 2013-08-13 Taiwan Semiconductor Manufacturing Company, Ltd. Heat dissipation by through silicon plugs
US8482020B2 (en) * 2010-12-08 2013-07-09 Bridgelux, Inc. System for wafer-level phosphor deposition

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200910644A (en) * 2007-08-29 2009-03-01 Everlight Electronics Co Ltd Phosphor coating method for light emmitting semiconductor device and applications thereof
TW201037867A (en) * 2009-04-02 2010-10-16 Visera Technologies Co Ltd White-light light emitting diode chips and fabrication methods thereof
US20110073896A1 (en) * 2010-12-08 2011-03-31 Bridgelux, Inc. System for Wafer-Level Phosphor Deposition

Also Published As

Publication number Publication date
JP6207151B2 (ja) 2017-10-04
JP2013140964A (ja) 2013-07-18
TW201334232A (zh) 2013-08-16
CN103187516A (zh) 2013-07-03
EP2618390B1 (en) 2017-09-13
EP2618390A1 (en) 2013-07-24
US8399268B1 (en) 2013-03-19

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