JP6205563B2 - テンプレート支援ウェハ接合のための方法およびシステム - Google Patents
テンプレート支援ウェハ接合のための方法およびシステム Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 123
- 239000000758 substrate Substances 0.000 claims description 187
- 239000000463 material Substances 0.000 claims description 99
- 229910052710 silicon Inorganic materials 0.000 claims description 65
- 239000010703 silicon Substances 0.000 claims description 65
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 64
- 239000004065 semiconductor Substances 0.000 claims description 43
- 150000001875 compounds Chemical class 0.000 claims description 24
- 239000002131 composite material Substances 0.000 claims description 20
- 238000004519 manufacturing process Methods 0.000 claims description 19
- 238000000059 patterning Methods 0.000 claims description 13
- 230000001590 oxidative effect Effects 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 125
- 230000008569 process Effects 0.000 description 65
- 230000003287 optical effect Effects 0.000 description 35
- 238000012545 processing Methods 0.000 description 18
- 238000002513 implantation Methods 0.000 description 16
- 229910052751 metal Inorganic materials 0.000 description 16
- 239000002184 metal Substances 0.000 description 16
- 230000005693 optoelectronics Effects 0.000 description 15
- 238000010586 diagram Methods 0.000 description 14
- 230000008901 benefit Effects 0.000 description 11
- 238000012986 modification Methods 0.000 description 11
- 230000004048 modification Effects 0.000 description 11
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 9
- 239000013078 crystal Substances 0.000 description 9
- 238000000926 separation method Methods 0.000 description 8
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- 238000001465 metallisation Methods 0.000 description 6
- 238000000137 annealing Methods 0.000 description 5
- 230000010354 integration Effects 0.000 description 5
- 239000007943 implant Substances 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 238000007517 polishing process Methods 0.000 description 4
- 230000003746 surface roughness Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 239000002178 crystalline material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000008929 regeneration Effects 0.000 description 2
- 238000011069 regeneration method Methods 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- CFAKWWQIUFSQFU-UHFFFAOYSA-N 2-hydroxy-3-methylcyclopent-2-en-1-one Chemical compound CC1=C(O)C(=O)CC1 CFAKWWQIUFSQFU-UHFFFAOYSA-N 0.000 description 1
- 229920002160 Celluloid Polymers 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000009432 framing Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- H—ELECTRICITY
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- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
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- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
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- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
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- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
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- H01S5/00—Semiconductor lasers
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- Light Receiving Elements (AREA)
Description
本出願は、米国特許法第119上(e)項の下、2010年12月8日に「Method and System for Template Assisted Wafer Bonding」の名称で出願された米国特許仮出願第61/420,917号の優先権を主張するものであり、ならびに、2011年5月20日に「Method and System for Template Assisted Wafer Bonding」の名称で出願された米国特許出願第13/112,142号の優先権を主張するものであり、なお、当該文献の開示は、すべての目的のためにその全体が参照により本明細書に組み入れられる。
先進的な電子機能、例えば、フォトニックデバイスのバイアス制御、変調、増幅、データシリアライゼーションおよびデシリアライゼーション、フレーミング、ルーティング、ならびに他の機能などは、通常、シリコン集積回路上に配置される。この主な理由は、市場可能コストにおいて非常に先進的な機能および性能を有するデバイスの生産を可能にするシリコン集積回路の設計および製作のためのグローバルインフラストラクチャの存在である。シリコンは、その間接的エネルギーバンドギャップのために、発光または光増幅にとって有用ではなかった。この欠点が、シリコン上にモノリシックに集積される光電子集積回路の製作を妨げてきた。
本発明により、半導体ウェハのテンプレート支援接合に関連する方法およびシステムが提供される。単なる一例として、本発明は、アセンブリ基板(テンプレートウェハとも呼ばれる)を使用して、ウェハレベルにおいてIII-V族ダイ(またはより複雑な回路のためのデバイス領域)を基板に接合する方法に適用される。当該方法および機器は、化合物半導体デバイスによる高速電子機能を集積するシリコン回路とシリコンデバイスを集積するフォトニクスのウェハスケールでの加工を含む様々な半導体加工用途に適用可能である。
Claims (14)
- 複数のデバイスを含む基板を提供する工程;
エピタキシャル層を含む化合物半導体基板を提供する工程;
該化合物半導体基板をダイシングして複数の化合物半導体ダイを提供する工程;
アセンブリ基板を提供する工程;
該複数の化合物半導体ダイを、該アセンブリ基板の所定の部分に取り付ける工程;
該基板と該アセンブリ基板とを位置合わせする工程;
該基板と該アセンブリ基板とを連結して、複合基板構造物を形成する工程;
該複合基板構造物から該アセンブリ基板の少なくとも一部を除去する工程;
1つ以上のフォトニックデバイスを該複数の化合物半導体ダイ上に画定する工程;
該1つ以上のフォトニックデバイスへの電気的相互接続をパターン形成する工程;
を含む、複合半導体構造物を製作する方法。 - 該複数のデバイスが、CMOSデバイスを含む、請求項1記載の方法。
- 該化合物半導体基板が、III-V族ウェハまたはII-VI族ウェハのうちの少なくとも1つを含む、請求項1記載の方法。
- 該1つ以上のフォトニックデバイスが、レーザー、検出器、または変調器のうちの少なくとも1つを含む、請求項1記載の方法。
- アセンブリ基板を提供する該工程が、
シリコン基板を酸化すること;
注入領域を形成するために、該酸化されたシリコン基板に注入を行うこと;および
該所定の部分を形成するために、該注入済みの基板にパターン形成を行うこと
を含む、請求項1記載の方法。 - 該アセンブリ基板の他の部分に導波路構造を形成する工程をさらに含む、請求項1記載の方法。
- 該導波路構造が、1つ以上のフォトニックデバイスの組を光学的に接続するように動作可能である、請求項6記載の方法。
- デバイス面および該面上に1つ以上の半導体デバイスを含む第1の基板を提供する工程;
エピタキシャル化合物半導体材料を含む化合物半導体基板を提供する工程;
該化合物半導体基板をダイシングして複数の化合物半導体ダイを提供する工程;
第2の基板を提供する工程;
該複数の化合物半導体ダイを、該第2の基板の所定の部分に取り付ける工程;
該第1の基板と該第2の基板とを位置合わせする工程;
該第1の基板と該第2の基板とをボンディングして、複合半導体構造物を形成する工程であって、該複数の化合物半導体ダイが該第1の基板の該デバイス面に連結される工程;
該第2の基板の一部を除去して該複数の化合物半導体ダイを露出させる工程;
1つ以上のデバイス領域を1つ以上の該複数の化合物半導体ダイ内に画定する工程;
該1つ以上のデバイス領域への電気的相互接続を形成する工程;
を含む、複合半導体構造物を製作する方法。 - 該第1の基板および該第2の基板のうちの少なくとも1つが、シリコン基板またはSOI基板を含む、請求項8記載の方法。
- 該化合物半導体基板が、III-V族ウェハまたはII-VI族ウェハを含み、該エピタキシャル化合物半導体材料が、III-V族材料またはII-VI族材料を含む、請求項8記載の方法。
- 該1つ以上の半導体デバイスが、CMOSデバイス、BiCMOSデバイス、NMOSデバイス、PMOSデバイス、検出器、またはCCDのうちの少なくとも1つを含む、請求項8記載の方法。
- 該1つ以上のデバイス領域が、レーザー、検出器、または変調器のうちの少なくとも1つの部分を形成する、請求項8記載の方法。
- 該1つ以上のデバイス領域への前記電気的相互接続を前記第2の基板に形成する工程をさらに含む、請求項8記載の方法。
- 該第2の基板の他の部分に1つ以上の導波路を形成する工程をさらに含み、
該1つ以上の導波路のそれぞれが、該1つ以上のデバイス領域の各組を光学的に接続するように動作可能である、請求項8記載の方法。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US42091710P | 2010-12-08 | 2010-12-08 | |
US61/420,917 | 2010-12-08 | ||
US13/112,142 | 2011-05-20 | ||
US13/112,142 US8222084B2 (en) | 2010-12-08 | 2011-05-20 | Method and system for template assisted wafer bonding |
Related Parent Applications (1)
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US20120264256A1 (en) | 2012-10-18 |
US20120149148A1 (en) | 2012-06-14 |
KR101963465B1 (ko) | 2019-03-28 |
US9461026B2 (en) | 2016-10-04 |
EP2648906A1 (en) | 2013-10-16 |
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US20140342500A1 (en) | 2014-11-20 |
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US8722464B2 (en) | 2014-05-13 |
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US8222084B2 (en) | 2012-07-17 |
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