JP6200585B2 - 陽極酸化アルミニウム層を含むヘテロ構造 - Google Patents
陽極酸化アルミニウム層を含むヘテロ構造 Download PDFInfo
- Publication number
- JP6200585B2 JP6200585B2 JP2016516993A JP2016516993A JP6200585B2 JP 6200585 B2 JP6200585 B2 JP 6200585B2 JP 2016516993 A JP2016516993 A JP 2016516993A JP 2016516993 A JP2016516993 A JP 2016516993A JP 6200585 B2 JP6200585 B2 JP 6200585B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- pores
- anodized aluminum
- type
- aao
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910052782 aluminium Inorganic materials 0.000 title claims description 60
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims description 60
- 239000011148 porous material Substances 0.000 claims description 122
- 239000004065 semiconductor Substances 0.000 claims description 75
- 238000000034 method Methods 0.000 claims description 58
- 230000005693 optoelectronics Effects 0.000 claims description 53
- 239000000463 material Substances 0.000 claims description 50
- 239000000758 substrate Substances 0.000 claims description 24
- 230000015572 biosynthetic process Effects 0.000 claims description 22
- 239000004020 conductor Substances 0.000 claims description 13
- 230000000903 blocking effect Effects 0.000 claims description 7
- 229910052594 sapphire Inorganic materials 0.000 claims description 6
- 239000010980 sapphire Substances 0.000 claims description 6
- 238000003892 spreading Methods 0.000 claims description 4
- 230000007480 spreading Effects 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 326
- 230000008569 process Effects 0.000 description 36
- 238000013461 design Methods 0.000 description 20
- 229910052751 metal Inorganic materials 0.000 description 20
- 239000002184 metal Substances 0.000 description 20
- 238000002048 anodisation reaction Methods 0.000 description 13
- 238000005530 etching Methods 0.000 description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- 239000000203 mixture Substances 0.000 description 10
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 238000013459 approach Methods 0.000 description 8
- 230000003647 oxidation Effects 0.000 description 8
- 238000007254 oxidation reaction Methods 0.000 description 8
- 238000007743 anodising Methods 0.000 description 7
- 238000000151 deposition Methods 0.000 description 7
- 238000009826 distribution Methods 0.000 description 7
- 238000000059 patterning Methods 0.000 description 7
- 229910002704 AlGaN Inorganic materials 0.000 description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 6
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 239000011777 magnesium Substances 0.000 description 6
- 150000004767 nitrides Chemical class 0.000 description 6
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 5
- 230000005670 electromagnetic radiation Effects 0.000 description 5
- 238000000605 extraction Methods 0.000 description 5
- 238000005286 illumination Methods 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 4
- 238000005253 cladding Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 230000000149 penetrating effect Effects 0.000 description 4
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 4
- 238000002310 reflectometry Methods 0.000 description 4
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000004590 computer program Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 239000011572 manganese Substances 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 239000010948 rhodium Substances 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 2
- 229910001199 N alloy Inorganic materials 0.000 description 2
- 208000012868 Overgrowth Diseases 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052790 beryllium Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 239000004038 photonic crystal Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 description 1
- 229910016455 AlBN Inorganic materials 0.000 description 1
- -1 AlInN Inorganic materials 0.000 description 1
- 229910017109 AlON Inorganic materials 0.000 description 1
- 238000012935 Averaging Methods 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052776 Thorium Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000012377 drug delivery Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 229910001325 element alloy Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000005287 template synthesis Methods 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Description
ここで、bはp−型層22の厚さ、aは細孔42の半径、r=ρ⊥ρ‖であり、ここでρ‖はp−型層22の横方向に沿った抵抗、ρ⊥はp−型層22の法線方向に沿った抵抗である。
Claims (20)
- 第1の表面を有する第1の半導体層と、
前記第1の半導体層の前記第1の表面に真隣の陽極酸化アルミニウム層と、
前記陽極酸化アルミニウム層の真隣の材料層を有し、
前記陽極酸化アルミニウム層は、前記陽極酸化アルミニウム層にわたって前記第1の半導体層の前記第1の表面に至る複数の細孔を有し、
前記材料層は、前記複数の細孔を覆い、前記複数の細孔の少なくとも幾つかを貫通し、前記第1の半導体層の前記第1の表面と直接接し、
前記複数の細孔のうちの複数は、前記材料層の電流の広がり長さ内に存在し、
前記複数の細孔は、前記材料層に貫通されていない空の細孔のセットを有する、半導体構造。 - 前記第1の半導体層はコンタクト層であり、前記材料層は、前記第1の半導体層とオーミックコンタクトを形成する導電性材料を含む、請求項1の構造。
- 前記導電性材料は反射コンタクトに含まれる、請求項2の構造。
- 前記複数の細孔は、大部分が充填された細孔の領域のセットと、大部分が空の細孔の領域のセットを有する、請求項2の構造。
- 前記導電性材料の真隣の反射材料層をさらに有する、請求項2の構造。
- 前記第1の半導体層は、p−型コンタクト層である、請求項2の構造。
- 前記第1の半導体層の前記第1の表面は、前記複数の細孔に対応する複数の溝を有する、請求項1の構造。
- 前記第1の半導体層の前記第1の表面に対して対向側の第2の表面に真隣りの第2の陽極酸化アルミニウム層をさらに有する、請求項1の構造。
- 前記第1の半導体層はp−型コンタクト層である、請求項8の構造。
- 前記第1の半導体層はバッファー層であり、前記材料層はn−型半導体層である、請求項8の構造。
- 透明基板と、
前記透明基板の外側表面上に位置する複数の細孔を含む第2の陽極酸化アルミニウム層をさらに有する、請求項1の構造。 - 前記透明基板はサファイアである、請求項11の構造。
- 活性領域と、
前記活性領域の第1の側に位置するp−型層と、
前記p−型層上に直接位置し、前記p−型層の隣接表面へわたる複数の細孔を含む陽極酸化アルミニウム層と、
前記陽極酸化アルミニウム層上に位置するp−型コンタクト層を有し、
前記p−型コンタクト層は導電性材料で形成され、前記導電性材料は前記複数の細孔を覆い、少なくとも前記複数の細孔の幾つかを貫通し、直接p−型層と接し、
前記複数の細孔のうちの複数は、前記導電性材料の電流の広がり長さ内に存在し、
前記複数の細孔は、前記導電性材料に貫通されていない空の細孔のセットを有する、オプトエレクトロニクスデバイス。 - 前記活性領域と前記p−型層の間に位置する電子ブロッキング層と、
前記電子ブロッキング層の上に直接位置する第2の陽極酸化アルミニウム層をさらに有し、
前記第2の陽極酸化アルミニウム層は、複数の第2の細孔を含み、
前記p−型層は、前記複数の第2の細孔の少なくとも幾つかを貫通する、請求項13のオプトエレクトロニクスデバイス。 - 前記第1の側に対向する、前記活性領域の第2の側に位置するn−型層と、
前記n−型層の露出された部分の上に直接位置し、複数の第2の細孔を含む第2の陽極酸化アルミニウム層と、
前記陽極酸化アルミニウム層上に位置するn−型コンタクトをさらに有し、
前記n−型コンタクトは導電性材料で形成され、前記導電性材料は前記複数の細孔の少なくとも幾つかを貫通し、n−型層と直接接する、請求項13のオプトエレクトロニクスデバイス。 - 前記活性領域の、前記第1の側に対向する第2の側に位置する透明基板と、
複数の第2の細孔を含む第2の陽極酸化アルミニウム層をさらに有し、前記第2の陽極酸化アルミニウム層は、前記透明基板の外側表面上に位置する、請求項13のオプトエレクトロニクスデバイス。 - 前記活性領域の、前記第1の側に対向する第2の側に位置するバッファー層と、
複数の第2の細孔を含む第2の陽極酸化アルミニウム層をさらに有し、
前記第2の陽極酸化アルミニウム層は、前記バッファー層に直接隣接する、請求項13のオプトエレクトロニクスデバイス。 - 前記第2の陽極酸化アルミニウム層は、前記バッファー層と基板の間に位置する、請求項17のオプトエレクトロニクスデバイス。
- 第1の表面を有する第1の半導体層を形成し、
前記第1の半導体層の前記第1の表面の真隣りに、陽極酸化アルミニウム層を形成し、
前記陽極酸化アルミニウム層の真隣りに材料層を形成することを含み、
前記陽極酸化アルミニウム層は、前記陽極酸化アルミニウム層にわたって前記第1の半導体層の前記第1の表面に至る複数の細孔を含み、
前記材料層は、前記複数の細孔を覆い、少なくとも前記複数の細孔の幾つかを貫通し、前記第1の半導体層と直接接し、
前記複数の細孔のうちの複数は、前記材料層の電流の広がり長さ内に存在し、
前記材料層の形成は、大部分が充填された細孔の領域のセットと、大部分が空の細孔の領域のセットを含む前記複数の細孔を与える、半導体構造の作製方法。 - 前記材料層の所望の導電性、所望の反射性、あるいは所望の透明性の少なくとも一つに基づき、前記複数の細孔のモルフォロジーを選択することをさらに含む、請求項19の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361885578P | 2013-10-02 | 2013-10-02 | |
US61/885,578 | 2013-10-02 | ||
PCT/US2014/058712 WO2015051051A1 (en) | 2013-10-02 | 2014-10-02 | Heterostructure including anodic aluminum oxide layer |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016537804A JP2016537804A (ja) | 2016-12-01 |
JP6200585B2 true JP6200585B2 (ja) | 2017-09-20 |
Family
ID=52739231
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016516993A Active JP6200585B2 (ja) | 2013-10-02 | 2014-10-02 | 陽極酸化アルミニウム層を含むヘテロ構造 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9425353B2 (ja) |
JP (1) | JP6200585B2 (ja) |
KR (1) | KR101944893B1 (ja) |
CN (1) | CN105765742B (ja) |
DE (1) | DE212014000194U1 (ja) |
WO (1) | WO2015051051A1 (ja) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10454006B2 (en) | 2013-10-02 | 2019-10-22 | Sensor Electronic Technology, Inc. | Heterostructure including anodic aluminum oxide layer |
WO2015061325A1 (en) * | 2013-10-21 | 2015-04-30 | Sensor Electronic Technology, Inc. | Heterostructure including a composite semiconductor layer |
US9703055B2 (en) | 2014-09-13 | 2017-07-11 | Sensor Electronic Technology, Inc. | AAO-based light guiding structure and fabrication thereof |
US10197750B2 (en) | 2014-09-13 | 2019-02-05 | Sensor Electronic Technology, Inc. | AAO-based light guiding structure and fabrication thereof |
US10025028B2 (en) | 2014-09-13 | 2018-07-17 | Sensor Electronic Technology, Inc. | Fluid-based light guiding structure and fabrication thereof |
CN109917511B (zh) | 2014-09-13 | 2021-12-03 | 传感器电子技术股份有限公司 | 基于流体的光导结构及其制造 |
CN112316173B (zh) | 2014-09-13 | 2022-09-02 | 首尔伟傲世有限公司 | 漫射光照明器 |
US9687577B2 (en) | 2014-09-13 | 2017-06-27 | Sensor Electronic Technology, Inc. | Ultraviolet illuminator for footwear treatment |
WO2017004497A1 (en) | 2015-07-01 | 2017-01-05 | Sensor Electronic Technology, Inc. | Substrate structure removal |
US10950747B2 (en) | 2015-07-01 | 2021-03-16 | Sensor Electronic Technology, Inc. | Heterostructure for an optoelectronic device |
CN105261681B (zh) * | 2015-09-08 | 2019-02-22 | 安徽三安光电有限公司 | 一种半导体元件及其制备方法 |
US10790410B2 (en) | 2015-10-23 | 2020-09-29 | Sensor Electronic Technology, Inc. | Light extraction from optoelectronic device |
JP2018046067A (ja) * | 2016-09-12 | 2018-03-22 | 株式会社ディスコ | 発光ダイオードチップの製造方法及び発光ダイオードチップ |
JP2018046066A (ja) * | 2016-09-12 | 2018-03-22 | 株式会社ディスコ | 発光ダイオードチップの製造方法 |
JP2018046068A (ja) * | 2016-09-12 | 2018-03-22 | 株式会社ディスコ | 発光ダイオードチップの製造方法 |
JP2018046064A (ja) * | 2016-09-12 | 2018-03-22 | 株式会社ディスコ | 発光ダイオードチップの製造方法及び発光ダイオードチップ |
JP2018046065A (ja) * | 2016-09-12 | 2018-03-22 | 株式会社ディスコ | 発光ダイオードチップの製造方法及び発光ダイオードチップ |
US10593839B2 (en) * | 2016-10-31 | 2020-03-17 | Sensor Electronic Technology, Inc. | Solid-state light source with small area contact |
KR102413330B1 (ko) * | 2017-09-12 | 2022-06-27 | 엘지전자 주식회사 | 반도체 발광소자를 이용한 디스플레이 장치 |
KR102088239B1 (ko) * | 2018-09-10 | 2020-03-12 | 고려대학교 산학협력단 | 나노포러스 산화물 기반 인공시냅스 소자 및 그 제조 방법 |
CN111384286B (zh) * | 2018-12-29 | 2021-07-06 | Tcl科技集团股份有限公司 | 量子点发光二极管及其制备方法 |
US11583810B2 (en) * | 2020-12-14 | 2023-02-21 | Industrial Technology Research Institute | Porous substrate structure and manufacturing method thereof |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4396010B2 (ja) | 2000-08-03 | 2010-01-13 | 日立電線株式会社 | 半導体の結晶成長方法 |
JP4606775B2 (ja) * | 2004-05-25 | 2011-01-05 | 電源開発株式会社 | 凹型酸化膜構造体 |
KR100672077B1 (ko) | 2004-11-05 | 2007-01-19 | 광주과학기술원 | 질화물계 발광소자의 제조방법 |
US7326963B2 (en) | 2004-12-06 | 2008-02-05 | Sensor Electronic Technology, Inc. | Nitride-based light emitting heterostructure |
KR100682872B1 (ko) * | 2004-12-08 | 2007-02-15 | 삼성전기주식회사 | 고효율 반도체 발광 소자 및 그 제조방법 |
TWI299917B (en) * | 2006-03-17 | 2008-08-11 | Epistar Corp | Light-emitting diode and method for manufacturing the same |
US8053789B2 (en) | 2006-12-28 | 2011-11-08 | Seoul Opto Device Co., Ltd. | Light emitting device and fabrication method thereof |
KR101316120B1 (ko) | 2006-12-28 | 2013-10-11 | 서울바이오시스 주식회사 | 양극 알루미늄산화를 이용한 산란 중심을 구비하는 발광 소자 제조방법 및 그 발광 소자 |
TWI361497B (en) * | 2007-08-20 | 2012-04-01 | Delta Electronics Inc | Light-emitting diode apparatus and manufacturing method thereof |
KR20110130907A (ko) * | 2010-05-28 | 2011-12-06 | 엘지이노텍 주식회사 | 나노임프린팅용 마스터 스탬프 및 소프트 스탬프 제조방법 |
CN102376830B (zh) * | 2010-08-19 | 2015-07-08 | 展晶科技(深圳)有限公司 | 发光二极管及其制造方法 |
WO2013090310A1 (en) | 2011-12-12 | 2013-06-20 | Sensor Electronic Technology, Inc. | Ultraviolet reflective contact |
WO2014011964A1 (en) | 2012-07-12 | 2014-01-16 | Sensor Electronic Technology, Inc. | Metallic contact for optoelectronic semiconductor device |
-
2014
- 2014-10-02 KR KR1020167011496A patent/KR101944893B1/ko active IP Right Grant
- 2014-10-02 US US14/504,456 patent/US9425353B2/en active Active
- 2014-10-02 DE DE212014000194.3U patent/DE212014000194U1/de active Active
- 2014-10-02 JP JP2016516993A patent/JP6200585B2/ja active Active
- 2014-10-02 CN CN201480054847.6A patent/CN105765742B/zh active Active
- 2014-10-02 WO PCT/US2014/058712 patent/WO2015051051A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
JP2016537804A (ja) | 2016-12-01 |
DE212014000194U1 (de) | 2016-06-17 |
US9425353B2 (en) | 2016-08-23 |
WO2015051051A1 (en) | 2015-04-09 |
CN105765742B (zh) | 2018-09-14 |
KR101944893B1 (ko) | 2019-02-01 |
KR20160065178A (ko) | 2016-06-08 |
CN105765742A (zh) | 2016-07-13 |
US20150091043A1 (en) | 2015-04-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6200585B2 (ja) | 陽極酸化アルミニウム層を含むヘテロ構造 | |
KR102425935B1 (ko) | GaN 수직 마이크로캐비티 표면 방출 레이저(VCSEL)를 위한 방법 | |
US10615307B2 (en) | Semiconductor structure with inhomogeneous regions | |
US9911895B2 (en) | Semiconductor structure with inhomogeneous regions | |
US8981403B2 (en) | Patterned substrate design for layer growth | |
JP6330604B2 (ja) | 半導体発光素子 | |
JP7262965B2 (ja) | 半導体発光素子 | |
TWI714146B (zh) | 具有光提取強化之利用內部色彩轉換之發光二極體 | |
KR101448693B1 (ko) | 금속 기판 위에 높은 효율을 지닌 자외선 수직 발광 다이오드를 제작하는 방법 | |
TW202228346A (zh) | 垂直共振腔面射雷射元件及其製造方法 | |
US10454006B2 (en) | Heterostructure including anodic aluminum oxide layer | |
US9923117B2 (en) | Semiconductor structure with inhomogeneous regions | |
CN110649130B (zh) | 一种紫外发光二极管及其制备方法 | |
CN211182231U (zh) | 一种紫外发光二极管 | |
KR101305793B1 (ko) | 발광소자 및 이의 제조방법 | |
US9960321B2 (en) | Multi-layered contact to semiconductor structure | |
TW202228347A (zh) | 垂直共振腔面射雷射元件及其製造方法 | |
KR20170047990A (ko) | 질화물계 발광 소자 및 이의 제조방법 | |
JP2012182182A (ja) | 発光素子およびその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20170227 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170328 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170626 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20170628 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20170801 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20170825 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6200585 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |