JP6187222B2 - Semiconductor module - Google Patents

Semiconductor module Download PDF

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JP6187222B2
JP6187222B2 JP2013257570A JP2013257570A JP6187222B2 JP 6187222 B2 JP6187222 B2 JP 6187222B2 JP 2013257570 A JP2013257570 A JP 2013257570A JP 2013257570 A JP2013257570 A JP 2013257570A JP 6187222 B2 JP6187222 B2 JP 6187222B2
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bank
mold
heat
semiconductor chip
molten resin
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JP2015115510A (en
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将司 林
将司 林
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Toyota Motor Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Description

本明細書では、放熱板の一方の面に半導体チップが直接ないし間接に固定されており、放熱板の他方の面が放熱面となって半導体チップを冷却する半導体モジュールであって、半導体チップの側面と放熱板の内面に接する範囲に溶融樹脂を充填し、硬化した樹脂で半導体チップの周囲を被覆する半導体モジュールを開示する。本明細書では、半導体チップが固定される側の面（前記した放熱板の一方の面）を内面といい、放熱面となる側の面を外面という。   In this specification, the semiconductor chip is directly or indirectly fixed to one surface of the heat dissipation plate, and the other surface of the heat dissipation plate serves as a heat dissipation surface to cool the semiconductor chip. Disclosed is a semiconductor module in which a molten resin is filled in a range in contact with a side surface and an inner surface of a heat sink, and the periphery of a semiconductor chip is covered with a cured resin. In this specification, the surface on which the semiconductor chip is fixed (one surface of the heat dissipation plate) is referred to as an inner surface, and the surface serving as a heat dissipation surface is referred to as an outer surface.

上記の半導体モジュールを製造するためには、半導体チップの側面と放熱板の内面に接する範囲に溶融樹脂を充填する一方において、放熱面となる範囲には溶融樹脂が侵入しないようにする必要がある。そのための技術が特許文献１に記載されている。
特許文献１の技術では、放熱面を一巡する突起を設ける。すなわち、放熱面を一巡する堤を設ける。放熱板の内面に半導体チップを固定したものを溶融樹脂の充填型にセットして型を閉じると、型の内面が放熱面を一巡する堤の頂面に密着する。これによって放熱面に接する空間と、堤よりも外周側の空間が気密に仕切られ、溶融樹脂が放熱面に接する空間に侵入することを防止する。 In order to manufacture the semiconductor module described above, it is necessary to fill the molten resin in a range where the side surface of the semiconductor chip and the inner surface of the heat dissipation plate are in contact with each other, but to prevent the molten resin from entering the range serving as the heat dissipation surface. . A technique for this is described in Patent Document 1.
In the technique of Patent Document 1, a protrusion that goes around the heat dissipation surface is provided. In other words, a bank that goes around the heat dissipation surface is provided. When a semiconductor chip fixed to the inner surface of the heat sink is set in a mold filled with molten resin and the mold is closed, the inner surface of the mold is in close contact with the top surface of the bank that goes around the heat dissipation surface. As a result, the space in contact with the heat dissipation surface and the space on the outer peripheral side of the bank are hermetically partitioned, and the molten resin is prevented from entering the space in contact with the heat dissipation surface.

特開２０１０−１９９４９４号公報JP 2010-199494 A

型を閉じることで、堤の頂面と型の内面が一様に密着する関係を得ることは難しい。特許文献１の技術では、（１）型を閉じる途中で、堤の頂面の一部と型の内面の一部が密着し、（２）その後は、接触部の頂面を変形させながら型を閉じてゆき、（３）型を閉じ終えた段階で、堤の頂面の全体が型の内面に密着する関係を得る。   By closing the mold, it is difficult to obtain a relationship in which the top surface of the bank and the inner surface of the mold are in close contact. In the technique of Patent Document 1, (1) a part of the top surface of the bank is in close contact with a part of the inner surface of the mold while the mold is being closed, and (2) the mold is then deformed while deforming the top surface of the contact portion. (3) At the stage when the mold is closed, the entire top surface of the bank is in close contact with the inner surface of the mold.

半導体モジュールの量産時には、製造公差によって堤の高さが変動する。堤の頂面と型の内面が接触するタイミングは様々となる。特許文献１の技術では、堤の高さが最も低くて型締めの遅いタイミングで堤の頂面と型の内面が接触する場合でも、前記（１）〜（３）の現象が得られるようにする必要がある。この技術の場合、堤の高さが高い場合には、型締めまでの間に堤の頂面を大きく変形させる必要が生じる。特許文献１の技術は、大きな型締め力を必要とする。大きな型締め力を加えると、放熱板あるいは半導体チップ等が損傷するといった事象が生じる。
本明細書では、小さな型締め力で堤の頂面と型の内面を密着させる技術を開示する。 During mass production of semiconductor modules, the height of the bank varies depending on manufacturing tolerances. There are various timings when the top surface of the bank and the inner surface of the mold come into contact with each other. In the technique of Patent Document 1, even when the top surface of the bank and the inner surface of the mold are in contact with each other at the timing when the height of the bank is the lowest and the mold clamping is slow, the above phenomena (1) to (3) can be obtained. There is a need to. In the case of this technique, when the height of the bank is high, it is necessary to largely deform the top surface of the bank before mold clamping. The technique of Patent Document 1 requires a large clamping force. When a large clamping force is applied, an event such as damage to a heat sink or a semiconductor chip occurs.
In this specification, the technique of sticking the top face of a bank and the inner surface of a type | mold with a small clamping force is disclosed.

本明細書で開示する半導体モジュールでは、半導体チップが放熱板の内面に固定されており、放熱板の外面に放熱面が確保されている。その放熱面を一巡する範囲に堤が形成されており、その堤の放熱板の外周側の側面の一部に窪みが形成されている。その窪みは、堤の外周側の側面から内周側に侵入するとともに前記側面において開口している。
上記の放熱板と半導体チップが積層されたものを溶融樹脂の充填型にセットし、型を閉じ、溶融樹脂を充填する。溶融樹脂は、半導体チップの側面と放熱板の内面に接する空間を充填し、その空間から放熱板の外面に接する空間に至る。放熱板の外面に接する空間に至った溶融樹脂は、堤によってせき止められ、放熱面には至らない。
堤と窪みの組み合わせを用いると、硬化した樹脂が放熱板の内面と堤より外周側の放熱板の外面に密着している一方において、放熱面を覆っていない半導体モジュールが得られる。この半導体モジュールでは、硬化した樹脂が窪み内に侵入している。 In the semiconductor module disclosed in this specification, the semiconductor chip is fixed to the inner surface of the heat radiating plate, and the heat radiating surface is secured on the outer surface of the heat radiating plate. A bank is formed in a range that goes around the heat radiation surface, and a recess is formed in a part of the side surface on the outer peripheral side of the heat sink of the bank. The recess penetrates from the outer peripheral side surface of the bank to the inner peripheral side and is open at the side surface.
A laminate of the heat dissipation plate and the semiconductor chip is set in a molten resin filling mold, the mold is closed, and the molten resin is filled. The molten resin fills a space in contact with the side surface of the semiconductor chip and the inner surface of the heat sink, and reaches from the space to a space in contact with the outer surface of the heat sink. The molten resin reaching the space in contact with the outer surface of the heat sink is blocked by the bank and does not reach the heat dissipation surface.
When a combination of a bank and a depression is used, a semiconductor module that does not cover the heat dissipation surface is obtained while the cured resin is in close contact with the inner surface of the heat sink and the outer surface of the heat sink on the outer peripheral side of the bank. In this semiconductor module, the cured resin has entered the recess.

堤の外周側の側面に放熱板の外周に向けて開口する窪みを設けると、溶融樹脂の充填型を閉じる際に型が堤を半導体チップ側に押し、窪みを潰し、堤が外周側に倒れる現象が得られる。型を閉じる力が小さくても、前記現象が得られ、堤の頂面が型の内面に密着する現象が得られる。堤と、その堤の外周側の側面において放熱板の外周に向けて開口する窪みの組み合わせによって、小さな型締め力で型の内面に密着する可撓堤が得られる。
可撓堤が溶融樹脂の充填型内で放熱板の外周側に倒れると、その姿勢は溶融樹脂の注入圧に対抗する姿勢となり、可撓堤の頂面が型の内面に密着し続ける。溶融樹脂の注入圧は可撓堤を放熱面側に押し戻す力を加えるが、その力は可撓堤の頂面を型の内面に密着させる力となる。窪みに入り込んだ溶融樹脂の注入圧もまた可撓堤を放熱面側に押し戻す力を加えるが、その力もまた可撓堤の頂面を型の内面に密着させる力となる。
堤の外周側の側面に放熱板の外周に向けて開口する窪みを設けると、溶融樹脂の注入圧が可撓堤の頂面を型の内面に密着させる力となる。小さな型締め力で溶融樹脂が放熱面に侵入することを防止できる。大きな型締め力によって構成部品が損傷するといったことを防止できる。 If a recess that opens toward the outer periphery of the heat sink is provided on the outer peripheral side of the bank, the mold pushes the bank to the semiconductor chip side when closing the mold filled with molten resin, collapses the bank, and the bank collapses to the outer side The phenomenon is obtained. Even when the mold closing force is small, the above phenomenon is obtained, and the phenomenon that the top surface of the bank is in close contact with the inner surface of the mold is obtained. And Tsutsumi, a combination of recesses opening toward the outer circumference of Oite radiating plate on the side surface of the outer peripheral side of the dam, the flexible Tsutsumi in close contact with the inner surface of the mold with a small mold clamping force is obtained.
When the flexible dyke falls down to the outer peripheral side of the heat sink in the molten resin filling mold, the posture is opposed to the molten resin injection pressure, and the top surface of the flexible dam continues to be in close contact with the inner surface of the mold. The injection pressure of the molten resin applies a force that pushes the flexible dyke back toward the heat radiating surface, and this force is a force that brings the top surface of the flexible dyke into close contact with the inner surface of the mold. The injection pressure of the molten resin that has entered the recess also applies a force that pushes the flexible dyke back toward the heat radiating surface, and this force also serves to bring the top surface of the flexible dyke into close contact with the inner surface of the mold.
When a recess that opens toward the outer periphery of the heat sink is provided on the side surface on the outer peripheral side of the bank, the injection pressure of the molten resin becomes a force that causes the top surface of the flexible bank to adhere to the inner surface of the mold. It is possible to prevent the molten resin from entering the heat radiating surface with a small clamping force. It is possible to prevent a component from being damaged by a large clamping force.

本明細書で開示する技術の詳細、及び、さらなる改良は、発明を実施するための形態、及び実施例にて詳しく説明する。   Details of the technology disclosed in this specification and further improvements will be described in detail in the detailed description and examples.

（Ａ）は型締め前の堤の拡大断面図を示し、（Ｂ）は型締め前の半導体モジュールと溶融樹脂充填型の関係を示し、（Ｃ）は型締め後の堤の拡大断面図を示し、（Ｄ）は型締め後の半導体モジュールと溶融樹脂充填型の関係を示す。(A) shows an enlarged cross-sectional view of the bank before mold clamping, (B) shows the relationship between the semiconductor module before mold clamping and the molten resin filling mold, and (C) shows an enlarged cross-sectional view of the bank after mold clamping. (D) shows the relationship between the semiconductor module after mold clamping and the molten resin filling mold. （Ａ）は樹脂でモールドした半導体モジュールの堤の周辺を拡大して示し、（Ｂ）は樹脂でモールドした半導体モジュールの断面図を示す。(A) expands and shows the circumference | surroundings of the bank of the semiconductor module molded with resin, (B) shows sectional drawing of the semiconductor module molded with resin. 第２実施例の図１の（Ｄ）に対応する図を示す。The figure corresponding to (D) of Drawing 1 of the 2nd example is shown. 第３実施例を示す。（Ａ）は図１の（Ｂ）に対応する図であり、（Ｂ）は図１の（Ｄ）に対応する図である。A 3rd Example is shown. (A) is a figure corresponding to (B) of Drawing 1, and (B) is a figure corresponding to (D) of Drawing 1. 第４実施例の図１の（Ｄ）に対応する図を示す。The figure corresponding to (D) of Drawing 1 of the 4th example is shown.

以下に説明する実施例の主要な特徴を下記に列記する。なお、以下に記載する技術要素は、それぞれが独立した技術要素であって、単独であるいは各種の組合せによって技術的有用性を発揮するものであり、出願時の請求項記載の組合せに限定されるものではない。
（特徴１） 変形前の堤の頂面は、放熱板の外周に近づくに従って、半導体チップから遠ざかる向きに傾斜している。
（特徴２） 堤は、板バネ状である。
（特徴３） 放熱面にフィンが形成されている。
（特徴４） 半導体チップの上下の両面に、放熱板が固定されている。
（特徴５） 変形前の堤の頂面は、製造公差内において最も低い状態でも、型締め後に型の内面に密着する高さに設計されている。 The main features of the embodiments described below are listed below. The technical elements described below are independent technical elements and exhibit technical usefulness alone or in various combinations, and are limited to the combinations described in the claims at the time of filing. It is not a thing.
(Characteristic 1) The top surface of the bank before deformation is inclined away from the semiconductor chip as it approaches the outer periphery of the heat sink.
(Characteristic 2) The bank is a leaf spring.
(Feature 3) Fins are formed on the heat radiation surface.
(Characteristic 4) The heat sink is fixed to the upper and lower surfaces of the semiconductor chip.
(Characteristic 5) The top surface of the dyke before deformation is designed to have a height that is in close contact with the inner surface of the mold after clamping, even in the lowest state within manufacturing tolerances.

（第１実施例）
図２（Ｂ）に、第１実施例の半導体モジュール２の断面図を示す。参照番号４は下部放熱板であり、参照番号８は半導体チップであり、参照番号１２は伝熱部材であり、参照番号１６は上部放熱板である。参照番号６は下部放熱板４と半導体チップ８を固定する固定層であり、参照番号１０は半導体チップ６と伝熱部材１２を固定する固定層であり、参照番号１４は伝熱部材１２と上部放熱板１６を固定する固定層である。参照番号１８は、溶融樹脂が硬化した樹脂であり、半導体チップ８の側面と伝熱部材１２の側面と下部放熱板４の内面と上部放熱板１６の内面に接する空間を充填している。樹脂は上部放熱板１６の側面を超えて外面に接する空間まで延びている。ただし堤１６ａによってせき止められ、放熱面１６ｈには達していない。本実施例の場合、下部放熱板４の外面は平坦であり、外面の全体が樹脂１８から露出している。 (First embodiment)
FIG. 2B shows a cross-sectional view of the semiconductor module 2 of the first embodiment. Reference numeral 4 is a lower radiator plate, reference numeral 8 is a semiconductor chip, reference numeral 12 is a heat transfer member, and reference numeral 16 is an upper radiator plate. Reference numeral 6 is a fixing layer for fixing the lower heat radiation plate 4 and the semiconductor chip 8, reference numeral 10 is a fixing layer for fixing the semiconductor chip 6 and the heat transfer member 12, and reference numeral 14 is the heat transfer member 12 and the upper part. It is a fixed layer for fixing the heat sink 16. Reference numeral 18 is a resin obtained by curing a molten resin, and fills a space in contact with the side surface of the semiconductor chip 8, the side surface of the heat transfer member 12, the inner surface of the lower radiator plate 4, and the inner surface of the upper radiator plate 16. The resin extends beyond the side surface of the upper radiator plate 16 to a space in contact with the outer surface. However, it is blocked by the bank 16a and does not reach the heat radiation surface 16h. In the case of the present embodiment, the outer surface of the lower radiator plate 4 is flat, and the entire outer surface is exposed from the resin 18.

図１の（Ｂ）は、下部放熱板４と半導体チップ８と伝熱部材１２と上部放熱板１６が積層され、固定層６，１０，１４で固定された状態のもの（以下ではモールド前モジュールという）を、溶融樹脂の充填型内にセットする様子を示している。充填型は、固定型２０と可動型２２を備えており、可動型２２を上方に持ち上げて型を開くことができる。
図１の（Ｄ）は、可動型２２を下降させて型を閉じ、半導体チップ８の側面と伝熱部材１２の側面と下部放熱板４の内面と上部放熱板１６の内面に接する空間に溶融樹脂を充填した様子を示している。上部放熱板１６の外面に形成されている堤１６ａ（放熱面１６ｈを一巡している）の頂面が可動型２２の内面に密着し、溶融樹脂が放熱面１６ｈの上方空間に侵入しない様子を示している。堤１６ａは放熱面１６ｈを一巡している。放熱面１６ｈは、半導体チップ８と伝熱部材１２を上部放熱板１６の内面に固定している固定層１４の形成範囲を含み、その外側に広がる範囲に確保されている。 1B shows a state in which the lower radiator plate 4, the semiconductor chip 8, the heat transfer member 12, and the upper radiator plate 16 are stacked and fixed by the fixing layers 6, 10, and 14 (hereinafter referred to as a pre-mold module). ) Is set in a molten resin filling mold. The filling mold includes a fixed mold 20 and a movable mold 22, and the mold can be opened by lifting the movable mold 22 upward.
In FIG. 1D, the movable die 22 is lowered to close the die and melted in a space in contact with the side surface of the semiconductor chip 8, the side surface of the heat transfer member 12, the inner surface of the lower radiator plate 4, and the inner surface of the upper radiator plate 16. A state in which the resin is filled is shown. The top surface of the bank 16a (circulating around the heat radiation surface 16h) formed on the outer surface of the upper heat radiation plate 16 is in close contact with the inner surface of the movable die 22, and the molten resin does not enter the space above the heat radiation surface 16h. Show. The bank 16a goes around the heat radiation surface 16h. The heat radiating surface 16h includes a formation range of the fixed layer 14 that fixes the semiconductor chip 8 and the heat transfer member 12 to the inner surface of the upper heat radiating plate 16, and is secured in a range that spreads outward.

図１の（Ａ）は、型締め前の堤１６ａの拡大断面図を示している。堤１６ａの側面（上部放熱板１６の外周側の側面）に、窪み１６ｃが形成されている。窪み１６ｃは、上部放熱板１６の外周側に開口している。また、堤１６ａの頂面１６ｂは、上部放熱板１６の外周に近づくに従って半導体チップ８から遠ざかる向きに傾斜している。   FIG. 1A shows an enlarged cross-sectional view of the bank 16a before clamping. A depression 16c is formed on a side surface of the bank 16a (a side surface on the outer peripheral side of the upper heat radiating plate 16). The recess 16 c is open to the outer peripheral side of the upper heat radiating plate 16. Further, the top surface 16 b of the bank 16 a is inclined in a direction away from the semiconductor chip 8 as it approaches the outer periphery of the upper radiator plate 16.

図１の（Ｃ）は、可動型２２を下降させて型を閉じた状態を示す。外周側に開口している窪み１６ｃがつぶされ、堤１６ａが外周側に倒れ、可動側２２の内面に対して傾斜していた堤１６ａの頂面１６ｂが可動側２２の内面に密着する角度に変形し、堤１６ａの頂面１６ｂが可動型２２の内面２２ａに密着する。製造公差によって、頂面１６ｂの高さに上下方向のばらつきがあっても、小さな型締め力で、図１（Ｃ）に示す位置関係を得ることができる。窪み１６ｃの存在によって、堤１６ａが小さな型締め力で変形する可撓堤となることがわかる。   FIG. 1C shows a state in which the movable mold 22 is lowered and the mold is closed. The recess 16c opened to the outer peripheral side is crushed, the bank 16a falls to the outer peripheral side, and the top surface 16b of the bank 16a that is inclined with respect to the inner surface of the movable side 22 is in contact with the inner surface of the movable side 22 The top surface 16b of the bank 16a is brought into close contact with the inner surface 22a of the movable die 22. Even if there is vertical variation in the height of the top surface 16b due to manufacturing tolerances, the positional relationship shown in FIG. 1C can be obtained with a small clamping force. It can be seen that due to the presence of the recess 16c, the bank 16a becomes a flexible bank that deforms with a small clamping force.

可撓堤１６ａと型２２が図１（Ｃ）の位置関係にある状態で、可撓堤１６ａの外周側に溶融樹脂が充填される。溶融樹脂の注入圧は可撓堤１６ａを放熱面１６ｈ側に押し戻す力を加えるが、その力は可撓堤１６ａの頂面１６ｂを型２２の内面２２ａに密着させる力となる。窪み１６ｃに入り込んだ溶融樹脂の注入圧もまた可撓堤１６ａを放熱面１６ｈ側に押し戻す力を加えるが、その力もまた可撓堤１６ａの頂面１６ｂを型２２の内面２２ａに密着させる力となる。可撓堤１６ａの半導体チップ８側に放熱板１６の外周に向けて開口する窪み１６ｃを設けると、溶融樹脂の注入圧によって可撓堤１６ａの頂面１６ｂを型２２の内面２２ａに密着させる力が得られる。小さな型締め力で溶融樹脂が放熱面１６ｈに侵入することを防止できる。図２（Ａ）に示すように、完成した半導体モジュールでは、窪み１６ｃ内で樹脂が硬化している。   In a state where the flexible bank 16a and the mold 22 are in the positional relationship of FIG. 1C, the outer peripheral side of the flexible bank 16a is filled with molten resin. The injection pressure of the molten resin applies a force to push the flexible bank 16a back to the heat radiation surface 16h side, and the force is a force to bring the top surface 16b of the flexible bank 16a into close contact with the inner surface 22a of the mold 22. The injection pressure of the molten resin that has entered the recess 16c also applies a force that pushes the flexible bank 16a back toward the heat radiating surface 16h, and the force also causes the top surface 16b of the flexible bank 16a to be in close contact with the inner surface 22a of the mold 22. Become. When the recess 16c that opens toward the outer periphery of the heat sink 16 is provided on the semiconductor chip 8 side of the flexible bank 16a, the force that causes the top surface 16b of the flexible bank 16a to be in close contact with the inner surface 22a of the mold 22 by the injection pressure of the molten resin Is obtained. It is possible to prevent the molten resin from entering the heat radiation surface 16h with a small clamping force. As shown in FIG. 2A, in the completed semiconductor module, the resin is cured in the recess 16c.

（第２実施例）
第１実施例では、下部放熱板４の外面が平坦であり、型２０に密着させることによって下部放熱板４の外面に溶融樹脂が到達することを防止している。第２実施例では、図３に示すように、下部放熱板４の放熱面に放熱フィン４ｆを設ける。この場合には、放熱フィン４ｆを一巡する範囲に可撓堤４ａを設ける。この可撓堤４ａも、第１実施例で説明したのと同様の特徴を備えている。小さな型締め力で、溶融樹脂が放熱フィン４ｆの形成部位に侵入することを防止できる。
図３に示すように、上部放熱板１６の放熱面１６ｈに放熱フィン１６ｆを形成してもよい。 (Second embodiment)
In the first embodiment, the outer surface of the lower radiator plate 4 is flat, and the molten resin is prevented from reaching the outer surface of the lower radiator plate 4 by being in close contact with the mold 20. In the second embodiment, as shown in FIG. 3, the heat radiation fins 4 f are provided on the heat radiation surface of the lower heat radiation plate 4. In this case, the flexible bank 4a is provided in a range that goes around the radiation fin 4f. This flexible bank 4a also has the same features as described in the first embodiment. With a small clamping force, it is possible to prevent the molten resin from entering the formation site of the radiation fins 4f.
As shown in FIG. 3, heat radiation fins 16 f may be formed on the heat radiation surface 16 h of the upper heat radiation plate 16.

（第３実施例）
放熱面を一巡する可撓堤の形状は様々であり得る。型の内面形状を調整することで、小さな型締め力で可撓堤の頂面を型の内面に密着させ、可撓堤に作用する溶融樹脂の充填圧が可撓堤の頂面を型の内面に密着させる力を得るのに必要な可撓堤の形状をさまざまに変形させることができる。図４はその一例を示し、外周側に開口している窪み１６ｅに対応して外周側に近づくほど上昇している部分を可撓堤１６ｄに利用することができる。第３実施例では、板バネ状の堤１６ｄを利用する。
図４の（Ｂ）は型締めした状態を示し、型を閉じると可撓堤１６ｄの頂面が型の内面に密着する関係を得ることができ、可撓堤１６ｄに溶融樹脂の充填圧が作用すると可撓堤１６ｄの頂面を型の内面に密着させる力が得られることが確認できる。 (Third embodiment)
The shape of the flexible bank that goes around the heat radiating surface can vary. By adjusting the shape of the inner surface of the mold, the top surface of the flexible bank is brought into close contact with the inner surface of the mold with a small clamping force, and the filling pressure of the molten resin acting on the flexible bank is The shape of the flexible dyke necessary for obtaining the force to adhere to the inner surface can be variously deformed. FIG. 4 shows an example thereof, and a portion that rises toward the outer peripheral side corresponding to the recess 16e opened on the outer peripheral side can be used for the flexible bank 16d. In the third embodiment, a leaf spring-shaped bank 16d is used.
FIG. 4B shows a state in which the mold is clamped. When the mold is closed, a relationship can be obtained in which the top surface of the flexible bank 16d is in close contact with the inner surface of the mold, and the filling pressure of the molten resin is applied to the flexible bank 16d. When it acts, it can be confirmed that a force to bring the top surface of the flexible bank 16d into close contact with the inner surface of the mold is obtained.

（第４実施例）
この実施例は、第３実施例の可撓堤を下部放熱板にも適用したものである。この実施例では、上部放熱板１６の放熱面に放熱フィン１６ｆを設けている。 (Fourth embodiment)
In this embodiment, the flexible bank of the third embodiment is also applied to the lower radiator plate. In this embodiment, heat radiation fins 16 f are provided on the heat radiation surface of the upper heat radiation plate 16.

以上、本明細書が開示する技術の実施例について詳細に説明したが、これらは例示にすぎず、特許請求の範囲を限定するものではない。特許請求の範囲に記載の技術には、以上に例示した具体例を様々に変形、変更したものが含まれる。
例えば、上記の実施例では、下部放熱板と上部放熱板の間に半導体チップを積層しているが、半導体チップのいずれか一方の面にだけ放熱板が配置されている実施例にも適用することができる。また、伝熱部材１２を利用しないモジュールに本明細書に記載の技術を適用することもできる。
また、本明細書または図面に説明した技術要素は、単独であるいは各種の組合せによって技術的有用性を発揮するものであり、出願時請求項記載の組合せに限定されるものではない。また、本明細書または図面に例示した技術は複数目的を同時に達成するものであり、そのうちの一つの目的を達成すること自体で技術的有用性を持つものである。 As mentioned above, although the Example of the technique which this specification discloses was described in detail, these are only illustrations and do not limit a claim. The technology described in the claims includes various modifications and changes of the specific examples illustrated above.
For example, in the above embodiment, the semiconductor chip is stacked between the lower heat sink and the upper heat sink. However, the present invention can also be applied to the embodiment in which the heat sink is disposed only on one surface of the semiconductor chip. it can. Further, the technique described in this specification can be applied to a module that does not use the heat transfer member 12.
The technical elements described in this specification or the drawings exhibit technical usefulness alone or in various combinations, and are not limited to the combinations described in the claims at the time of filing. In addition, the technology illustrated in the present specification or the drawings achieves a plurality of objects at the same time, and has technical utility by achieving one of the objects.

２：半導体モジュール
４：下部放熱板（放熱フィンが形成されていることがある）
４ａ：堤（可撓堤）
４ｄ：堤
４ｅ：窪み
４ｆ：放熱フィン
６：固定層
８：半導体チップ
１０：固定層
１２：伝熱部材
１４：固定層
１６：上部放熱板（放熱フィンが形成されていることがある）
１６ａ：堤
１６ｂ：頂面
１６ｃ：窪み
１６ｄ：堤
１６ｅ：窪み
１６ｆ：放熱フィン
１６ｈ：放熱面
１８：モールド樹脂（硬化した樹脂）
２０：下型
２２：上型
２２ａ：密着面 2: Semiconductor module 4: Lower radiator plate (radiation fins may be formed)
4a: dike (flexible dike)
4d: bank 4e: dent 4f: radiating fin 6: fixed layer 8: semiconductor chip 10: fixed layer 12: heat transfer member 14: fixed layer 16: upper heat radiating plate (heat radiating fins may be formed)
16a: bank 16b: top surface 16c: recess 16d: bank 16e: recess 16f: heat radiation fin 16h: heat radiation surface 18: mold resin (cured resin)
20: Lower mold 22: Upper mold 22a: Contact surface

Claims (1)

半導体チップが放熱板の内面に固定されており、
前記半導体チップの固定範囲を含む範囲の前記放熱板の外面が放熱面であり、
前記放熱面を一巡する範囲に堤が形成されており、
前記堤の前記放熱板の外周側の側面の一部に、前記側面から内周側に侵入するとともに前記側面において開口する窪みが形成されており、
硬化した樹脂が、前記放熱板の内面と前記堤より外周側の前記放熱板の外面に密着しており、前記窪み内に侵入しており、前記放熱面を覆っていないことを特徴とする半導体モジュール。 The semiconductor chip is fixed to the inner surface of the heat sink,
The outer surface of the heat radiating plate in a range including the fixing range of the semiconductor chip is a heat radiating surface,
A bank is formed in a range that makes a round of the heat dissipation surface,
A recess is formed in a part of the outer peripheral side of the heat sink of the bank and enters the inner peripheral side from the side and opens in the side .
The cured resin is in close contact with the inner surface of the heat radiating plate and the outer surface of the heat radiating plate on the outer peripheral side of the bank, penetrates into the recess, and does not cover the heat radiating surface. module.
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