JP6175294B2 - 機能性基板の作製方法および半導体装置の作製方法 - Google Patents

機能性基板の作製方法および半導体装置の作製方法 Download PDF

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JP6175294B2
JP6175294B2 JP2013131582A JP2013131582A JP6175294B2 JP 6175294 B2 JP6175294 B2 JP 6175294B2 JP 2013131582 A JP2013131582 A JP 2013131582A JP 2013131582 A JP2013131582 A JP 2013131582A JP 6175294 B2 JP6175294 B2 JP 6175294B2
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substrate
film
semiconductor
insulating film
heat treatment
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JP2014029992A (ja
JP2014029992A5 (enExample
Inventor
陽一 飯窪
陽一 飯窪
一哉 花岡
一哉 花岡
翔 永松
翔 永松
照幸 藤井
照幸 藤井
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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JP2013131582A 2012-06-25 2013-06-24 機能性基板の作製方法および半導体装置の作製方法 Expired - Fee Related JP6175294B2 (ja)

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JP2013131582A JP6175294B2 (ja) 2012-06-25 2013-06-24 機能性基板の作製方法および半導体装置の作製方法

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JP2012141666 2012-06-25
JP2012141666 2012-06-25
JP2013131582A JP6175294B2 (ja) 2012-06-25 2013-06-24 機能性基板の作製方法および半導体装置の作製方法

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JP2014029992A5 JP2014029992A5 (enExample) 2016-08-04
JP6175294B2 true JP6175294B2 (ja) 2017-08-02

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6981812B2 (ja) * 2016-08-31 2021-12-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN111681951B (zh) * 2020-07-31 2023-01-24 广东省大湾区集成电路与系统应用研究院 一种半导体结构及其制造方法
CN112687799B (zh) * 2020-12-19 2022-10-11 复旦大学 一种高结晶度半导体膜转移制造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
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JP4478268B2 (ja) * 1999-12-28 2010-06-09 セイコーエプソン株式会社 薄膜デバイスの製造方法
JP4267394B2 (ja) * 2002-07-16 2009-05-27 株式会社半導体エネルギー研究所 剥離方法、及び半導体装置の作製方法
KR101447048B1 (ko) * 2007-04-20 2014-10-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Ｓｏｉ 기판 및 반도체장치의 제조방법
US7781306B2 (en) * 2007-06-20 2010-08-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor substrate and method for manufacturing the same
JP2009135453A (ja) * 2007-10-30 2009-06-18 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法、半導体装置及び電子機器
JP5643488B2 (ja) * 2009-04-28 2014-12-17 信越化学工業株式会社 低応力膜を備えたｓｏｉウェーハの製造方法

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