JP6173889B2 - シミュレーション方法、シミュレーションプログラム、加工制御システム、シミュレータ、プロセス設計方法およびマスク設計方法 - Google Patents

シミュレーション方法、シミュレーションプログラム、加工制御システム、シミュレータ、プロセス設計方法およびマスク設計方法 Download PDF

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Publication number
JP6173889B2
JP6173889B2 JP2013245647A JP2013245647A JP6173889B2 JP 6173889 B2 JP6173889 B2 JP 6173889B2 JP 2013245647 A JP2013245647 A JP 2013245647A JP 2013245647 A JP2013245647 A JP 2013245647A JP 6173889 B2 JP6173889 B2 JP 6173889B2
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Japan
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wafer
mask
aperture ratio
calculated
etch rate
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JP2013245647A
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Japanese (ja)
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JP2015103769A (ja
JP2015103769A5 (https=
Inventor
信行 久保井
信行 久保井
木下　隆
隆 木下
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Sony Semiconductor Solutions Corp
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Sony Semiconductor Solutions Corp
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Priority to JP2013245647A priority Critical patent/JP6173889B2/ja
Priority to TW103136187A priority patent/TWI661323B/zh
Priority to US14/522,065 priority patent/US9431310B2/en
Publication of JP2015103769A publication Critical patent/JP2015103769A/ja
Publication of JP2015103769A5 publication Critical patent/JP2015103769A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32926—Software, data control or modelling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
JP2013245647A 2013-11-28 2013-11-28 シミュレーション方法、シミュレーションプログラム、加工制御システム、シミュレータ、プロセス設計方法およびマスク設計方法 Expired - Fee Related JP6173889B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2013245647A JP6173889B2 (ja) 2013-11-28 2013-11-28 シミュレーション方法、シミュレーションプログラム、加工制御システム、シミュレータ、プロセス設計方法およびマスク設計方法
TW103136187A TWI661323B (zh) 2013-11-28 2014-10-20 模擬方法，模擬程式，製程控制系統，模擬器，製程設計方法及光罩設計方法
US14/522,065 US9431310B2 (en) 2013-11-28 2014-10-23 Simulation method, simulation program, process control system, simulator, process design method, and mask design method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013245647A JP6173889B2 (ja) 2013-11-28 2013-11-28 シミュレーション方法、シミュレーションプログラム、加工制御システム、シミュレータ、プロセス設計方法およびマスク設計方法

Publications (3)

Publication Number Publication Date
JP2015103769A JP2015103769A (ja) 2015-06-04
JP2015103769A5 JP2015103769A5 (https=) 2016-04-14
JP6173889B2 true JP6173889B2 (ja) 2017-08-02

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JP2013245647A Expired - Fee Related JP6173889B2 (ja) 2013-11-28 2013-11-28 シミュレーション方法、シミュレーションプログラム、加工制御システム、シミュレータ、プロセス設計方法およびマスク設計方法

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US (1) US9431310B2 (https=)
JP (1) JP6173889B2 (https=)
TW (1) TWI661323B (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7802917B2 (en) * 2005-08-05 2010-09-28 Lam Research Corporation Method and apparatus for chuck thermal calibration
JP6516603B2 (ja) * 2015-04-30 2019-05-22 東京エレクトロン株式会社 エッチング方法及びエッチング装置
US9865471B2 (en) * 2015-04-30 2018-01-09 Tokyo Electron Limited Etching method and etching apparatus
US10534257B2 (en) * 2017-05-01 2020-01-14 Lam Research Corporation Layout pattern proximity correction through edge placement error prediction
WO2019162346A1 (en) * 2018-02-23 2019-08-29 Asml Netherlands B.V. Methods for training machine learning model for computation lithography
US10572697B2 (en) 2018-04-06 2020-02-25 Lam Research Corporation Method of etch model calibration using optical scatterometry
US11921433B2 (en) 2018-04-10 2024-03-05 Lam Research Corporation Optical metrology in machine learning to characterize features
WO2019199697A1 (en) 2018-04-10 2019-10-17 Lam Research Corporation Resist and etch modeling
WO2020049974A1 (ja) 2018-09-03 2020-03-12 株式会社Ｐｒｅｆｅｒｒｅｄ Ｎｅｔｗｏｒｋｓ 学習装置、推論装置、学習モデルの生成方法及び推論方法
KR102541743B1 (ko) 2018-09-03 2023-06-13 가부시키가이샤 프리퍼드 네트웍스 학습 장치, 추론 장치 및 학습 완료 모델
JP7345382B2 (ja) * 2018-12-28 2023-09-15 東京エレクトロン株式会社 プラズマ処理装置及び制御方法
KR102565831B1 (ko) * 2019-01-28 2023-08-09 양쯔 메모리 테크놀로지스 씨오., 엘티디. 더미 패턴을 설계하는 시스템 및 방법

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6909930B2 (en) * 2001-07-19 2005-06-21 Hitachi, Ltd. Method and system for monitoring a semiconductor device manufacturing process
US7363099B2 (en) * 2002-06-07 2008-04-22 Cadence Design Systems, Inc. Integrated circuit metrology
JP3639268B2 (ja) * 2002-06-14 2005-04-20 株式会社日立製作所 エッチング処理方法
JP5050830B2 (ja) * 2007-12-19 2012-10-17 ソニー株式会社 ドライエッチング装置および半導体装置の製造方法
JP5440021B2 (ja) * 2009-08-24 2014-03-12 ソニー株式会社 形状シミュレーション装置、形状シミュレーションプログラム、半導体製造装置及び半導体装置の製造方法
JP5732843B2 (ja) * 2010-12-21 2015-06-10 ソニー株式会社 シミュレータ、加工装置、ダメージ評価方法、及び、ダメージ評価プログラム

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US9431310B2 (en) 2016-08-30
JP2015103769A (ja) 2015-06-04
US20150149970A1 (en) 2015-05-28
TWI661323B (zh) 2019-06-01
TW201520803A (zh) 2015-06-01

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