JP6172706B2 - BaO−MgO−Ta2O5系酸化物を基盤とする誘電性磁器組成物、および、当該組成物から製造された高いQ値を有するマイクロ波誘電共振器 - Google Patents
BaO−MgO−Ta2O5系酸化物を基盤とする誘電性磁器組成物、および、当該組成物から製造された高いQ値を有するマイクロ波誘電共振器 Download PDFInfo
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- 239000000203 mixture Substances 0.000 title claims description 43
- 239000000919 ceramic Substances 0.000 title claims description 32
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 title 1
- 239000000126 substance Substances 0.000 claims description 25
- 229910010293 ceramic material Inorganic materials 0.000 claims description 9
- 239000011777 magnesium Substances 0.000 claims description 6
- 229910052788 barium Inorganic materials 0.000 claims description 4
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- 239000006227 byproduct Substances 0.000 description 15
- 239000000395 magnesium oxide Substances 0.000 description 13
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 13
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 12
- 239000003989 dielectric material Substances 0.000 description 10
- 238000010587 phase diagram Methods 0.000 description 8
- 238000005245 sintering Methods 0.000 description 8
- 239000000843 powder Substances 0.000 description 7
- 238000004891 communication Methods 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 241001175904 Labeo bata Species 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000012552 review Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229940099596 manganese sulfate Drugs 0.000 description 2
- 235000007079 manganese sulphate Nutrition 0.000 description 2
- 239000011702 manganese sulphate Substances 0.000 description 2
- SQQMAOCOWKFBNP-UHFFFAOYSA-L manganese(II) sulfate Chemical compound [Mn+2].[O-]S([O-])(=O)=O SQQMAOCOWKFBNP-UHFFFAOYSA-L 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 description 1
- 150000001553 barium compounds Chemical class 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000010954 commercial manufacturing process Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 150000002681 magnesium compounds Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- -1 polyethylene Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 238000000634 powder X-ray diffraction Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910002076 stabilized zirconia Inorganic materials 0.000 description 1
- 150000003482 tantalum compounds Chemical class 0.000 description 1
Description
誘電体共振器と低損失誘電体材料のレビューは、非特許文献2の"無線通信用誘電体材料"、Mailadil T. Sebastian著、エルゼビア2008にある。また、非特許文献3の"誘電体材料、デバイス、回路のレビュー" がS. J. Fiedziuszkoら著、IEEEトランザクション、マイクロ波理論と技術、50、706-720(2002)にもある。
K:X=0.6016モルのBaO、Y =0.1985モルのMgO、Z =0.2モルのTa2O5;
L:X=0.6137モルのBaO、Y =0.1863モルのMgO、Z =0.2モルのTa2O5;
M:X=0.6093モルのBaO、Y =0.1827モルのMgO、Z =0.2079モルのTa2O5;
N:X =0.6007モルのBaO、Y =0.1980モルのMgO、Z =0.2009モルのTa2O5。
A: BaMg1/3Ta2/3O3-Ba6Ta2O11-Ba4Ta2O9
B: BaMg1/3Ta2/3O3- Ba4Ta2O9-Ba3Ta2O8
C: BaMg1/3Ta2/3O3- Ba3Ta2O8-Ba5Ta4O15
D: BaMg1/3Ta2/3O3- Ba5Ta4O15-Ba9MgTa14O45
E: BaMg1/3Ta2/3O3- Ba9MgTa14O45-Mg4Ta2O9
F: BaMg1/3Ta2/3O3- Mg4Ta2O9-MgO
G: BaMg1/3Ta2/3O3-MgO-BaO
H: BaMg1/3Ta2/3O3-BaO-Ba6Ta2O11
K: x= 0.6016 mol BaO, y=0.1985 mol MgO, z=0.2 mol Ta2O5;
L: x= 0.6137 mol BaO, y=0.1863 mol MgO, z=0.2 mol Ta2O5;
M: x= 0.6093 mol BaO, y=0.1827 mol MgO, z=0.2079 mol Ta2O5;
N: x= 0.6007 mol BaO, y=0.1980 mol MgO, z=0.2009 mol Ta2O5;
一方、図2の文字"D"、"E"及び"F"によって指定された共存性三角形の範囲内に収まるxBaO、yMgO、zTa2O5化学組成のセラミクスは、高密度且つ高い誘電率係数e>23.5を有するものの、そのQ値は10 GHzで20,000未満であり、殆どの場合、そのQ値は10 GHzで未満10,000であることが判明した。したがって、文字"A"、"G"、"H"、"D"、"E"と"F"によって指定された共存性三角形の範囲内に収まるxBaO、yMgO、zTa2O5化学組成のセラミクスの誘電特性は、高Q値誘電体共振器用には不適当である。
Claims (4)
- バリウム、マグネシウム、タンタル及び酸素の元素から構成され、xBaO−yMgO−zTa2O5の金属酸化物の混合物によって表され、当該濃度が図3の“KLMN”として指定された多角形の範囲内に収まるもので、それらの化学組成は次のように表される誘電体セラミック材料:
K:x=0.6016モルのBaO、y=0.1985モルのMgO、z=0.2モルのTa2O5;
L:x=0.6137モルのBaO、y=0.1863モルのMgO、z=0.2モルのTa2O5;
M:x=0.6093モルのBaO、y=0.1827モルのMgO、z=0.2079モルのTa2O5;
N:x=0.6007モルのBaO、y=0.1980モルのMgO、z=0.2009モルのTa2O5。 - 請求項1に記載の誘電体セラミックスにおいて、前記誘電体セラミックスは23.5<ε<25.5の範囲の誘電率を有し、無負荷時の品質係数と共振周波数との積が、Q*f>200テラヘルツであることを特徴とする誘電体セラミックス。
- 請求項2に記載の誘電体セラミックスにおいて、前記誘電体セラミックスは+1ppm/℃<τf<+8ppm/℃の範囲内の共振周波数の温度係数τfを有することを特徴とする誘電体セラミックス。
- 請求項1乃至3の何れか1項に記載の誘電体セラミック組成物から形成される共振器本体から構成される誘電体共振器。
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CN114213124B (zh) * | 2021-12-14 | 2022-12-20 | 北京科技大学 | 一种中介电常数微波介质陶瓷材料及其制备方法 |
CN116715519A (zh) * | 2023-04-28 | 2023-09-08 | 电子科技大学 | ZnZrTa2O8基微波介质陶瓷材料及其制备方法 |
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