JP6165241B2 - ガリウムイオンを有するイオンビームを発生する方法及び装置 - Google Patents
ガリウムイオンを有するイオンビームを発生する方法及び装置 Download PDFInfo
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- JP6165241B2 JP6165241B2 JP2015514039A JP2015514039A JP6165241B2 JP 6165241 B2 JP6165241 B2 JP 6165241B2 JP 2015514039 A JP2015514039 A JP 2015514039A JP 2015514039 A JP2015514039 A JP 2015514039A JP 6165241 B2 JP6165241 B2 JP 6165241B2
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- 229910052733 gallium Inorganic materials 0.000 title claims description 90
- -1 gallium ions Chemical class 0.000 title claims description 30
- 238000010884 ion-beam technique Methods 0.000 title claims description 21
- 238000000034 method Methods 0.000 title claims description 19
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 70
- 150000002259 gallium compounds Chemical class 0.000 claims description 37
- CKHJYUSOUQDYEN-UHFFFAOYSA-N gallium(3+) Chemical compound [Ga+3] CKHJYUSOUQDYEN-UHFFFAOYSA-N 0.000 claims description 20
- 239000007787 solid Substances 0.000 claims description 20
- 229910001195 gallium oxide Inorganic materials 0.000 claims description 19
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 16
- 239000002243 precursor Substances 0.000 claims description 8
- 239000006227 byproduct Substances 0.000 claims description 3
- 230000000977 initiatory effect Effects 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 description 86
- 241000894007 species Species 0.000 description 72
- 239000007789 gas Substances 0.000 description 49
- 238000004544 sputter deposition Methods 0.000 description 28
- 229910052731 fluorine Inorganic materials 0.000 description 16
- 239000011737 fluorine Substances 0.000 description 14
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 12
- 238000000605 extraction Methods 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- 230000008018 melting Effects 0.000 description 9
- 238000002844 melting Methods 0.000 description 9
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 229910005269 GaF 3 Inorganic materials 0.000 description 8
- 229910005540 GaP Inorganic materials 0.000 description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 8
- 238000005468 ion implantation Methods 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 239000011261 inert gas Substances 0.000 description 6
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 5
- 229910002601 GaN Inorganic materials 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 230000007935 neutral effect Effects 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 238000010494 dissociation reaction Methods 0.000 description 4
- 230000005593 dissociations Effects 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 125000001153 fluoro group Chemical group F* 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000001819 mass spectrum Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 239000013077 target material Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 101000912874 Schizosaccharomyces pombe (strain 972 / ATCC 24843) Iron-sensing transcriptional repressor Proteins 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000005513 bias potential Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 150000002221 fluorine Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 239000006200 vaporizer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/20—Ion sources; Ion guns using particle beam bombardment, e.g. ionisers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J7/00—Details not provided for in the preceding groups and common to two or more basic types of discharge tubes or lamps
- H01J7/24—Cooling arrangements; Heating arrangements; Means for circulating gas or vapour within the discharge space
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/919—Compensation doping
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Combustion & Propulsion (AREA)
- Drying Of Semiconductors (AREA)
- Electron Sources, Ion Sources (AREA)
Description
Ga(s)+2F(g)>GaF2(g) (1)
GaF2(g)+e>GaF(g)+F(g)+e (2)
GaF(g)+e>Ga(g)+F(g)+e (3)
Ga(g)+e>Ga++e+e (4)
Claims (8)
- ガリウムイオンを有するイオンビームを発生する方法であって、
ガリウム化合物ターゲットの少なくとも一部分をプラズマチャンバ内に用意するステップであって、前記ガリウム化合物ターゲットは、ガリウム及び少なくとも1つの追加的元素を含むステップと;
少なくとも1つのガス種を用いて、前記プラズマチャンバ内でプラズマの発生を開始するステップと;
ガスエッチャント種の供給源を用意して、このガスエッチャント種を前記ガリウム化合物ターゲットと反応させて、揮発性のガリウム種を形成するステップと
を含み、
前記ガスエッチャント種の供給源を用意するステップが、エッチャントガスを前記プラズマチャンバ内に送達することを含み、
NF 3 を、前記エッチャントガスとして供給し、酸化ガリウムを、前記ガリウム化合物ターゲットとして用意することを特徴とする方法。 - 前記ガスエッチャント種の供給源を用意するステップが、前記ガスエッチャント種の前駆体物質を、前記ガリウム化合物ターゲット中に設けることを含むことを特徴とする請求項1に記載の方法。
- 前記エッチャントガスを、前記ガリウム化合物ターゲットと反応して、ガリウム含有ガス種を生成すべく機能するガスとして供給することを、さらに含むことを特徴とする請求項1に記載の方法。
- 前記ガスエッチャント種の供給源が、8eVより大きいイオン化エネルギーを有する気相種を発生すべく機能することを特徴とする請求項1に記載の方法。
- 前記ガリウム化合物ターゲットが、プラズマに晒されると、固体として凝結する副産物を生成することなしに、揮発性のガリウム種を産出するように構成されていることを特徴とする請求項1に記載の方法。
- 前記揮発性のガリウム種は、GaF 2 を含むことを特徴とする請求項1に記載の方法。
- ガリウムイオンビームを発生する装置であって、
少なくとも1つのガス種を有するプラズマを、プラズマチャンバ内に発生するプラズマ源と;
少なくとも部分的に前記プラズマチャンバ内に配置されたガリウム化合物ターゲットとを具え、前記ガリウム化合物ターゲットが、ガリウム及び少なくとも1つの追加的元素を有し、前記少なくとも1つのガス種のうち1つ以上と、前記ガリウム化合物ターゲットとが相互作用して、ガスエッチャント種を発生し、このガスエッチャント種が、前記ガリウム化合物ターゲットと反応して、揮発性のガリウム含有種を形成すべく機能し、
前記プラズマがNF 3 を含み、前記ガリウム化合物ターゲットが酸化ガリウムを含むことを特徴とするガリウムイオンビーム発生装置。 - 前記プラズマチャンバが、前記ガリウム化合物ターゲットと反応してガリウム含有ガス種を生成すべく機能するエッチャントガスを受け入れるように構成されていることを特徴とする請求項7に記載の装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/477,253 | 2012-05-22 | ||
US13/477,253 US9396902B2 (en) | 2012-05-22 | 2012-05-22 | Gallium ION source and materials therefore |
PCT/US2013/039437 WO2013176867A1 (en) | 2012-05-22 | 2013-05-03 | Gallium ion source and materials therefore |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2015525438A JP2015525438A (ja) | 2015-09-03 |
JP2015525438A5 JP2015525438A5 (ja) | 2016-05-19 |
JP6165241B2 true JP6165241B2 (ja) | 2017-07-19 |
Family
ID=48430963
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015514039A Active JP6165241B2 (ja) | 2012-05-22 | 2013-05-03 | ガリウムイオンを有するイオンビームを発生する方法及び装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9396902B2 (ja) |
JP (1) | JP6165241B2 (ja) |
KR (1) | KR102044913B1 (ja) |
CN (1) | CN104603908B (ja) |
TW (1) | TWI602239B (ja) |
WO (1) | WO2013176867A1 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105655217B (zh) * | 2015-12-14 | 2017-12-15 | 中国电子科技集团公司第四十八研究所 | 一种射频偏压供电的磁控溅射金属铝离子源 |
WO2019118120A1 (en) * | 2017-12-12 | 2019-06-20 | Applied Materials, Inc. | Ion source crucible for solid feed materials |
US10832913B2 (en) * | 2018-02-14 | 2020-11-10 | Taiwan Semiconductor Manufacturing Company Ltd. | Method and apparatus for forming semiconductor structure |
US10892137B2 (en) * | 2018-09-12 | 2021-01-12 | Entegris, Inc. | Ion implantation processes and apparatus using gallium |
US11404254B2 (en) * | 2018-09-19 | 2022-08-02 | Varian Semiconductor Equipment Associates, Inc. | Insertable target holder for solid dopant materials |
WO2020197938A1 (en) * | 2019-03-22 | 2020-10-01 | Axcelis Technologies, Inc. | Liquid metal ion source |
JP7256711B2 (ja) * | 2019-07-16 | 2023-04-12 | 住友重機械イオンテクノロジー株式会社 | イオン生成装置およびイオン注入装置 |
US11170973B2 (en) * | 2019-10-09 | 2021-11-09 | Applied Materials, Inc. | Temperature control for insertable target holder for solid dopant materials |
US10957509B1 (en) | 2019-11-07 | 2021-03-23 | Applied Materials, Inc. | Insertable target holder for improved stability and performance for solid dopant materials |
US11854760B2 (en) | 2021-06-21 | 2023-12-26 | Applied Materials, Inc. | Crucible design for liquid metal in an ion source |
US11887806B2 (en) | 2022-04-07 | 2024-01-30 | Applied Materials, Inc. | Composite ion source based upon heterogeneous metal-metal fluoride system |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5730250A (en) * | 1980-07-30 | 1982-02-18 | Oki Electric Ind Co Ltd | Ion generator |
JPS57201527A (en) | 1981-06-01 | 1982-12-10 | Toshiba Corp | Ion implantation method |
JPS63211542A (ja) * | 1987-02-25 | 1988-09-02 | Nissin Electric Co Ltd | イオン源装置 |
JP4363694B2 (ja) * | 1998-04-17 | 2009-11-11 | 株式会社東芝 | イオン注入装置および半導体装置の製造方法 |
KR20010039728A (ko) * | 1999-07-22 | 2001-05-15 | 가와하라 하지메 | 이온 소스 |
US6452338B1 (en) * | 1999-12-13 | 2002-09-17 | Semequip, Inc. | Electron beam ion source with integral low-temperature vaporizer |
US6583544B1 (en) * | 2000-08-07 | 2003-06-24 | Axcelis Technologies, Inc. | Ion source having replaceable and sputterable solid source material |
US6461972B1 (en) * | 2000-12-22 | 2002-10-08 | Lsi Logic Corporation | Integrated circuit fabrication dual plasma process with separate introduction of different gases into gas flow |
WO2002073652A2 (en) | 2001-03-13 | 2002-09-19 | Varian Semiconductor Equipment Associates, Inc. | Methods and apparatus for oxygen implantation |
US20020179247A1 (en) * | 2001-06-04 | 2002-12-05 | Davis Matthew F. | Nozzle for introduction of reactive species in remote plasma cleaning applications |
US20030000921A1 (en) * | 2001-06-29 | 2003-01-02 | Ted Liang | Mask repair with electron beam-induced chemical etching |
TW589672B (en) * | 2002-12-31 | 2004-06-01 | Ind Tech Res Inst | Method of manufacturing p-type transparent conductive film and its system |
US7102139B2 (en) * | 2005-01-27 | 2006-09-05 | Varian Semiconductor Equipment Associates, Inc. | Source arc chamber for ion implanter having repeller electrode mounted to external insulator |
SG188150A1 (en) | 2008-02-11 | 2013-03-28 | Advanced Tech Materials | Ion source cleaning in semiconductor processing systems |
TW200940729A (en) * | 2008-03-18 | 2009-10-01 | Univ Nat Taiwan Science Tech | Capillaritron ion beam sputtering system and thin films producing method |
US7812321B2 (en) * | 2008-06-11 | 2010-10-12 | Varian Semiconductor Equipment Associates, Inc. | Techniques for providing a multimode ion source |
US7968441B2 (en) * | 2008-10-08 | 2011-06-28 | Applied Materials, Inc. | Dopant activation anneal to achieve less dopant diffusion (better USJ profile) and higher activation percentage |
US8501624B2 (en) * | 2008-12-04 | 2013-08-06 | Varian Semiconductor Equipment Associates, Inc. | Excited gas injection for ion implant control |
CN104217981B (zh) * | 2009-02-11 | 2018-01-09 | 恩特格里斯公司 | 半导体制造系统中的离子源清洁方法 |
JP5343835B2 (ja) * | 2009-12-10 | 2013-11-13 | 日新イオン機器株式会社 | 反射電極構造体及びイオン源 |
US8368039B2 (en) * | 2010-04-05 | 2013-02-05 | Cymer, Inc. | EUV light source glint reduction system |
TW201213599A (en) * | 2010-07-02 | 2012-04-01 | Matheson Tri Gas Inc | Thin films and methods of making them using cyclohexasilane |
JP5317038B2 (ja) * | 2011-04-05 | 2013-10-16 | 日新イオン機器株式会社 | イオン源及び反射電極構造体 |
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2012
- 2012-05-22 US US13/477,253 patent/US9396902B2/en active Active
-
2013
- 2013-05-03 WO PCT/US2013/039437 patent/WO2013176867A1/en active Application Filing
- 2013-05-03 KR KR1020147035751A patent/KR102044913B1/ko active IP Right Grant
- 2013-05-03 CN CN201380033131.3A patent/CN104603908B/zh active Active
- 2013-05-03 JP JP2015514039A patent/JP6165241B2/ja active Active
- 2013-05-14 TW TW102116948A patent/TWI602239B/zh active
Also Published As
Publication number | Publication date |
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CN104603908B (zh) | 2017-03-08 |
KR20150016580A (ko) | 2015-02-12 |
WO2013176867A1 (en) | 2013-11-28 |
JP2015525438A (ja) | 2015-09-03 |
CN104603908A (zh) | 2015-05-06 |
US9396902B2 (en) | 2016-07-19 |
KR102044913B1 (ko) | 2019-11-14 |
TW201349342A (zh) | 2013-12-01 |
TWI602239B (zh) | 2017-10-11 |
US20130313971A1 (en) | 2013-11-28 |
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