JP6165166B2 - スポット走査システムのための改善された高速対数光検出器 - Google Patents

スポット走査システムのための改善された高速対数光検出器 Download PDF

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JP6165166B2
JP6165166B2 JP2014547519A JP2014547519A JP6165166B2 JP 6165166 B2 JP6165166 B2 JP 6165166B2 JP 2014547519 A JP2014547519 A JP 2014547519A JP 2014547519 A JP2014547519 A JP 2014547519A JP 6165166 B2 JP6165166 B2 JP 6165166B2
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gain
pmt
scan line
scan
line
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Japanese (ja)
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JP2015507180A5 (enExample
JP2015507180A (ja
Inventor
ラルフ ウルフ
ラルフ ウルフ
グレイス チェン
グレイス チェン
カイ ツァオ
カイ ツァオ
ジェイミー サリバン
ジェイミー サリバン
ポール ドンデルス
ポール ドンデルス
デレク マッケイ
デレク マッケイ
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KLA Corp
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KLA Corp
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Signal Processing (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2014547519A 2011-12-16 2012-12-14 スポット走査システムのための改善された高速対数光検出器 Active JP6165166B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US201161576702P 2011-12-16 2011-12-16
US61/576,702 2011-12-16
US201261700527P 2012-09-13 2012-09-13
US61/700,527 2012-09-13
US13/675,687 2012-11-13
US13/675,687 US9389166B2 (en) 2011-12-16 2012-11-13 Enhanced high-speed logarithmic photo-detector for spot scanning system
PCT/US2012/069906 WO2013090815A1 (en) 2011-12-16 2012-12-14 Enhanced high-speed logarithmic photo-detector for spot scanning system

Publications (3)

Publication Number Publication Date
JP2015507180A JP2015507180A (ja) 2015-03-05
JP2015507180A5 JP2015507180A5 (enExample) 2016-02-12
JP6165166B2 true JP6165166B2 (ja) 2017-07-19

Family

ID=48613240

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014547519A Active JP6165166B2 (ja) 2011-12-16 2012-12-14 スポット走査システムのための改善された高速対数光検出器

Country Status (5)

Country Link
US (1) US9389166B2 (enExample)
JP (1) JP6165166B2 (enExample)
KR (1) KR102125586B1 (enExample)
IL (1) IL233063B (enExample)
WO (1) WO2013090815A1 (enExample)

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US9793673B2 (en) 2011-06-13 2017-10-17 Kla-Tencor Corporation Semiconductor inspection and metrology system using laser pulse multiplier
US10197501B2 (en) 2011-12-12 2019-02-05 Kla-Tencor Corporation Electron-bombarded charge-coupled device and inspection systems using EBCCD detectors
US9496425B2 (en) 2012-04-10 2016-11-15 Kla-Tencor Corporation Back-illuminated sensor with boron layer
US9601299B2 (en) 2012-08-03 2017-03-21 Kla-Tencor Corporation Photocathode including silicon substrate with boron layer
US9151940B2 (en) 2012-12-05 2015-10-06 Kla-Tencor Corporation Semiconductor inspection and metrology system using laser pulse multiplier
US9529182B2 (en) 2013-02-13 2016-12-27 KLA—Tencor Corporation 193nm laser and inspection system
US8995746B2 (en) * 2013-03-15 2015-03-31 KLA—Tencor Corporation Image synchronization of scanning wafer inspection system
US9608399B2 (en) 2013-03-18 2017-03-28 Kla-Tencor Corporation 193 nm laser and an inspection system using a 193 nm laser
US9478402B2 (en) * 2013-04-01 2016-10-25 Kla-Tencor Corporation Photomultiplier tube, image sensor, and an inspection system using a PMT or image sensor
US9748294B2 (en) 2014-01-10 2017-08-29 Hamamatsu Photonics K.K. Anti-reflection layer for back-illuminated sensor
US9410901B2 (en) 2014-03-17 2016-08-09 Kla-Tencor Corporation Image sensor, an inspection system and a method of inspecting an article
US9804101B2 (en) 2014-03-20 2017-10-31 Kla-Tencor Corporation System and method for reducing the bandwidth of a laser and an inspection system and method using a laser
US9767986B2 (en) 2014-08-29 2017-09-19 Kla-Tencor Corporation Scanning electron microscope and methods of inspecting and reviewing samples
US9748729B2 (en) 2014-10-03 2017-08-29 Kla-Tencor Corporation 183NM laser and inspection system
US9860466B2 (en) 2015-05-14 2018-01-02 Kla-Tencor Corporation Sensor with electrically controllable aperture for inspection and metrology systems
US10186406B2 (en) 2016-03-29 2019-01-22 KLA—Tencor Corporation Multi-channel photomultiplier tube assembly
US10778925B2 (en) 2016-04-06 2020-09-15 Kla-Tencor Corporation Multiple column per channel CCD sensor architecture for inspection and metrology
US10313622B2 (en) 2016-04-06 2019-06-04 Kla-Tencor Corporation Dual-column-parallel CCD sensor and inspection systems using a sensor
US10175555B2 (en) 2017-01-03 2019-01-08 KLA—Tencor Corporation 183 nm CW laser and inspection system
US11287375B2 (en) * 2018-04-12 2022-03-29 Hitachi High-Tech Corporation Inspection device
US11114489B2 (en) 2018-06-18 2021-09-07 Kla-Tencor Corporation Back-illuminated sensor and a method of manufacturing a sensor
US11114491B2 (en) 2018-12-12 2021-09-07 Kla Corporation Back-illuminated sensor and a method of manufacturing a sensor
US11848350B2 (en) 2020-04-08 2023-12-19 Kla Corporation Back-illuminated sensor and a method of manufacturing a sensor using a silicon on insulator wafer

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Publication number Priority date Publication date Assignee Title
JPS63247602A (ja) * 1987-04-02 1988-10-14 Nikon Corp 位置検出装置
US6002122A (en) 1998-01-23 1999-12-14 Transient Dynamics High-speed logarithmic photo-detector
US6252412B1 (en) 1999-01-08 2001-06-26 Schlumberger Technologies, Inc. Method of detecting defects in patterned substrates
ATE502295T1 (de) 2000-12-15 2011-04-15 Kla Tencor Corp Verfahren und vorrichtung zum untersuchen eines substrats
JP2002244275A (ja) * 2001-02-15 2002-08-30 Toshiba Corp フォトマスクの欠陥検査方法、フォトマスクの欠陥検査装置及び記録媒体
US6538730B2 (en) 2001-04-06 2003-03-25 Kla-Tencor Technologies Corporation Defect detection system
AU2002357812A1 (en) * 2001-12-10 2003-06-23 Genomic Solutions, Inc. Adjustable gain detectors in optical scanner devices
US6833913B1 (en) * 2002-02-26 2004-12-21 Kla-Tencor Technologies Corporation Apparatus and methods for optically inspecting a sample for anomalies
JP4751617B2 (ja) * 2005-01-21 2011-08-17 株式会社日立ハイテクノロジーズ 欠陥検査方法及びその装置
KR100758460B1 (ko) 2006-10-25 2007-09-14 주식회사 포스코 스테인레스 강판의 표면결함 검출방법
JP5309057B2 (ja) 2010-03-01 2013-10-09 株式会社日立ハイテクノロジーズ 表面検査装置及び表面検査方法

Also Published As

Publication number Publication date
US20130169957A1 (en) 2013-07-04
IL233063A0 (en) 2014-07-31
JP2015507180A (ja) 2015-03-05
WO2013090815A1 (en) 2013-06-20
KR102125586B1 (ko) 2020-06-22
US9389166B2 (en) 2016-07-12
IL233063B (en) 2018-04-30
KR20140093295A (ko) 2014-07-25

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