JP6164770B2 - Substrate surface treatment method and apparatus - Google Patents

Description

  The present invention relates to a substrate surface processing method and apparatus using a particle beam source.

  A technique for irradiating a substrate surface with energetic particles using a particle beam source such as an ion beam source is widely used for various purposes such as sputter removal of a surface layer, modification, or surface activation. As an example, room temperature bonding by so-called surface activation is applied to solid phase bonding of a semiconductor or an insulating substrate, and it is possible to obtain high bonding strength by a process at normal temperature or low temperature.

  In addition to a particle bundle accelerated by a particle beam source (particle beam), a thin film is formed by depositing particles or clusters of a desired substance on the substrate surface simultaneously with or separately from the particle beam, or the surface Surface modification such as doping is performed. Thereby, at the time of room temperature bonding by the surface activation, for example, the silicon substrate surface is surface activated, or a silicon thin film is formed on the surface activated substrate surface, and a small amount of predetermined iron or the like is formed on these surfaces. By depositing the transition metal, a strong bonding strength can be obtained. (Patent Document 1)

  However, in a technique using a particle beam source, it is often difficult to perform irradiation of energetic particles (particle beam) uniformly over the substrate surface.

  For example, when the beam emission port is small with respect to the size of the substrate, the beam emitted from the beam emission port gradually spreads. In this case, irradiation conditions such as the incident angle of the colliding beam and the irradiation amount per time differ depending on the position on the substrate. Therefore, variations on the substrate, such as the sputter removal rate by beam irradiation and the activity obtained by irradiation, can occur.

  In order to perform more uniform particle beam irradiation, a line type particle beam source can be used. The line type particle beam source has a linear (linear) linear beam emission port, and extends in the line direction from the beam emission port or has a width in the line direction. Can be emitted. The line-type beam irradiation source can be configured such that the beam irradiation amount and energy are sufficiently uniform in the line direction. Therefore, by irradiating the line type particle beam source while moving the line type particle beam source relative to the substrate, it becomes possible to perform very uniform beam irradiation on the substrate.

JP 2003-152027 A

  However, there is a problem even if a line type particle beam source is used. When the substrate surface is irradiated with energetic particles using a line type or normal energetic particle source, the material on the substrate surface is sputtered away. The material (sputtered particles) sputtered and removed from the substrate surface is scattered in the process atmosphere in the form of atoms and clusters. For example, when a pair of substrates are arranged facing each other for substrate bonding, scattered sputtered particles adhere to the other substrate surface during particle beam irradiation on the surface of one substrate. As a result, impurities and unnecessary materials are deposited on the substrate surface, and when the energetic particle irradiation is performed on the other substrate surface, the amount of sputtering cannot be accurately controlled, or the substrate surface can be appropriately processed. It may not be possible.

  In order to avoid deposition of sputtered particles from one substrate on the other substrate, a configuration in which the two substrates are opposed to each other can be avoided, for example, a configuration in which the substrates are sufficiently separated from each other in the substrate surface direction can be employed. However, this configuration is not preferable because the volume of the chamber for performing particle beam irradiation is increased. Further, beam irradiation can be performed one by one without facing the substrate. However, if the process time is increased and the handling time is long, the characteristics of the substrate surface after beam irradiation are deteriorated by contact with the atmosphere, which is not preferable.

  In addition, by providing a cone-shaped metal body at the grid irradiation portion or radiation port at the beam irradiation source and configuring them with a dopant (additive) material such as a predetermined metal, the metal particles are irradiated while performing the beam irradiation. And radiate against the substrate. Thereby, it becomes possible to dope the substrate surface with the dopant material, or to distribute the dopant material on or near the surface of the substrate. The same phenomenon can be obtained even if the metal body is placed at a position where it is exposed to energetic particles between the particle source and the substrate to be irradiated.

  Usually, the amount of dopant added to the substrate needs to be accurately performed. However, when a metal body having the above dopant material is used, the amount of dopant added to the substrate depends on the shape of the dopant material such as the metal body, the position relative to the irradiation surface of the particle beam source (energy particle source) and the substrate. It is defined by the type of energy particles and kinetic energy. Therefore, with these configurations, it is difficult to accurately control the doping amount of the dopant material with respect to the substrate.

  Furthermore, while the dopant material adheres to the substrate surface, the material on the substrate surface is removed by sputtering due to the collision of particle beams (energy particles) emitted from the particle beam source at the same time. The removal amount of the dopant material adhering to the substrate surface by the collision of energetic particles is determined by the magnitude relationship between the adhering amount of the dopant material and the sputtering amount by the energetic particles. That is, if the amount of sputtering is greater than the amount of deposited dopant, all of the dopant is removed. If the amount of dopant attached is larger than the amount of sputtering, the substrate surface is sputtered away, but an amount of dopant corresponding to the difference remains attached to the substrate surface. However, for example, in substrate solid-phase bonding (normal temperature bonding), the relationship between the amount of sputtering for performing predetermined surface activation and the amount of added dopant (added amount) for increasing the bonding strength is delicate. A slight difference in conditions can shift the balance of this relationship from one to the other. Therefore, in the configuration in the above case, it is difficult to finely adjust the balance of this relationship.

  Therefore, in order to solve at least one or more of the problems described above, the present invention uses a line type particle beam source without causing sputtered particles scattered by surface treatment on one substrate to affect the other substrate. An object of the present invention is to provide a method and apparatus for treating a substrate surface.

  Still another object of the present invention is to provide a substrate surface processing method and processing apparatus that accurately and independently controls beam irradiation and sputter deposition on a substrate.

  In the present application, a wafer (hereinafter referred to as a substrate) includes a plate-shaped semiconductor, but is not limited thereto. In addition to the semiconductor, the wafer or substrate may be formed of a material such as glass, ceramics, metal, plastic, or a composite material thereof. The material includes a material having high rigidity and a material having low rigidity, and is formed into various shapes such as a circle and a rectangle.

  In the present application, the “chip” is given as a broad concept term indicating a molded semiconductor plate-like component including a semiconductor component, an electronic component such as a packaged semiconductor integrated circuit (IC), and the like. The “chip” includes a component generally called a “die”, a component having a size smaller than that of the substrate, and a size that allows a plurality of components to be bonded to the substrate, or a small substrate. In addition to electronic components, optical components, optoelectronic components, and mechanical components are also included.

  In order to solve the above technical problem, a substrate surface treatment method according to the present invention uses a line-type particle beam source disposed between two opposing substrates, and applies a beam to the surface of one substrate. Performing irradiation and preventing a substance released from one substrate from adhering to the other substrate using a shielding member disposed between the two substrates during beam irradiation. It is what I did. According to the present invention, at the same time as irradiation, the surface of one substrate is treated with a line type particle beam source, and adhesion or deposition of a substance sputtered from the substrate to the other substrate can be prevented. . Therefore, surface treatment characteristics such as sputter removal on the surface of the other substrate can be controlled more accurately, and contamination by undesirable substances such as deposition of impurities on the substrate surface can be prevented. Therefore, when performing substrate solid-phase bonding by surface activation treatment, there is an effect that a suitable interface activation treatment can be performed to form a bonding interface excellent in predetermined characteristics such as bonding strength.

  The substrate surface treatment method according to the present invention may further comprise depositing the sputtered material on the surface of the substrate irradiated with the beam by sputtering the sputtered material using a line type particle beam source. . Thereby, it is possible to perform sputter deposition on the surface of the substrate using one line type particle beam source immediately after or simultaneously with direct particle beam irradiation of the surface of the substrate. Therefore, the surface treatment apparatus including the line type particle beam source can be designed and made small, and the atmosphere around the substrate can be easily controlled by saving the space.

  In the substrate surface treatment method according to the present invention, the shielding member has a plurality of surfaces on which the sputtering material can be mounted, and the shielding member is rotated around an axis substantially parallel to the line direction of the line-type particle beam source. Sputtering material mounted on each surface may be sputtered. By mounting the sputtering material on the shielding member, the surface treatment apparatus including the line-type particle beam source can be designed and made smaller, and the shielding and the sputtering treatment can be efficiently exchanged. Moreover, the amount of sputtering can be appropriately controlled by separating from the activation step.

  In the substrate surface treatment method according to the present invention, the shielding member is plate-shaped, and one surface can be used as a shielding surface, and the other surface is loaded with a sputter material, the substrate to be treated, and the treatment You may make it further provide rotating a shielding member according to whether the surface treatment performed with respect to the object board | substrate is beam irradiation or sputter deposition. Thereby, the shielding member can be rotated to efficiently and selectively shield the sputtered particles and sputter deposition during the beam irradiation.

  In the substrate surface treatment method according to the present invention, beam irradiation is performed using a shielding member in which silicon (Si) is mounted on one surface as a sputtering material and a transition metal is mounted on the other surface. Silicon (Si) may be deposited on the substrate surface, and a predetermined amount of transition metal may be deposited on the deposited silicon (Si). As a result, a thin film of silicon (silicon, Si) doped with an appropriate amount of a transition metal such as iron is formed on the surface activated surface, thereby efficiently forming a bonding interface having extremely high bonding strength. be able to.

  In the substrate surface treatment method according to the present invention, the line type particle beam source may have a grid containing conductive carbon. This suppresses the release of metal such as iron from the line type particle beam source and suppresses the amount of metal deposited on the substrate surface, so that the sputter material can be accurately applied to the substrate surface using metal. The amount of deposition can be controlled to a desired value.

  In the substrate surface processing method according to the present invention, the line type particle beam source has a first line type particle beam source and a second line type particle beam source, and the first line type particle beam source is used to The second line particle beam source is used to perform beam irradiation, and the sputter material is sputtered to deposit the sputter material on the surface of the substrate irradiated with the first line particle beam source. It may be. Accordingly, the sputter material can be deposited on the surface activated substrate surface immediately after or simultaneously with the surface activation treatment, so that the content of impurities can be suppressed and a highly active surface can be formed. . Thereafter, by bringing these surfaces into contact with each other, a bonding interface having high bonding strength can be formed.

  In the substrate surface treatment method according to the present invention, a line type particle beam source that is rotatable about an axis substantially parallel to the line direction is moved between two substrates, while one beam is directed to the surface of both substrates. Irradiation may be performed. Thereby, it is not necessary to arrange a particle beam source for each substrate, and surface treatment can be performed on two substrates using one or a set of line type particle beam sources.

  According to the present invention, a substrate surface treatment method for irradiating a substrate surface with a line-type particle beam source has a plurality of particle beam sources in which the line-type particle beam sources are linearly arranged in the line direction. Then, a number of beam irradiation sources corresponding to the size of the substrate in the line direction are operated to perform beam irradiation on the substrate surface. According to the present invention, it is possible to emit a particle beam having a length corresponding to the size of a substrate to be processed. For example, a particle beam having a length corresponding to the size of the substrate in the longitudinal direction (line direction) of the line type particle beam source can be irradiated onto the substrate surface having a small size. As a result, it is possible to suppress the emission of unnecessary substances to the atmosphere due to the beam irradiation to portions other than the substrate surface area to be surface-treated, and to maintain a clean processing atmosphere, which is also high when bonding the bonding surfaces. A bonding interface having a bonding strength can be formed. Furthermore, the operation of the particle beam source can be saved.

  In the surface treatment method according to the present invention, the size of the emitted particle beam in the line direction is changed according to the size of the substrate to be processed through a command system connected in a line and connected to each of a plurality of particle beam sources. This is a further provision. According to the present invention, surface treatment can be performed on substrates of many sizes with one line type particle beam source. Therefore, a multi-product process can be performed efficiently.

  In order to solve the above technical problem, a substrate surface processing apparatus according to the present invention is a line type that is disposed between two opposing substrates and selectively irradiates the surface of one substrate with a beam. It is configured to include a particle beam source and a shielding member that is disposed between two substrates and shields a substance scattered from the substrate that receives the beam irradiation toward another substrate. According to the present invention, a uniform particle beam irradiation is performed on one substrate using a line type particle beam source, and at the same time, the surface of one substrate is processed with the line type particle beam source, and the substrate is sputtered. It is possible to prevent the material to be adhered or deposited on the other substrate. Therefore, surface treatment characteristics such as sputter removal on the surface of the other substrate can be controlled more accurately, and contamination by undesirable substances such as deposition of impurities on the substrate surface can be prevented. Therefore, when performing substrate solid-phase bonding by surface activation treatment, an appropriate surface activation treatment can be performed to form a bonding interface excellent in predetermined characteristics such as bonding strength.

  The substrate surface treatment apparatus according to the present invention may be configured such that the line-type particle beam source and the shielding member can translate between two substrates. Thereby, the particle beam irradiation can be performed uniformly on the substrate having a relatively large area by scanning the line type particle beam source.

  The substrate surface treatment apparatus according to the present invention further includes a sputtering member disposed between two opposing substrates, and the line particle beam source selectively irradiates the substrate and the sputtering member with beam irradiation. The sputter member may be configured to receive the beam irradiation from the line type particle beam source and to sputter the sputtered material toward the substrate surface. Thereby, using one line type particle beam source, irradiation of the particle beam on one substrate and deposition by sputtering are selectively or alternately performed, and at the same time, undesirable sputtered particles are prevented from adhering to the other substrate. be able to. Thus, for example, a substrate surface can be activated by particle beam irradiation on one substrate to form a thin film with high adhesion, and a high-quality thin film with high adhesion can be formed on the other substrate as well. it can.

  In the substrate surface processing apparatus according to the present invention, the shielding member has a rotation axis substantially parallel to the line direction of the line-type particle beam source, has a plurality of surfaces parallel to the rotation axis, and the plurality of surfaces are Further, it may be configured to have a shielding surface that shields a substance scattered from the substrate that receives the beam irradiation toward another substrate, and a sputtering surface on which a sputtering material can be mounted. Thus, the shielding member is rotated to selectively prevent the sputtered particles from scattering to the other substrate at the shielding surface when the particle beam is irradiated onto the substrate, and to the sputtering surface on which a predetermined sputtering material is mounted at the time of deposition by sputtering. On the other hand, sputtering can be performed by irradiating a particle beam from a line type particle beam source.

  The substrate surface treatment apparatus according to the present invention further includes a sputtering material disposed between two opposing substrates, and the line type particle beam source includes a first line type particle beam source and a second line type particle beam source. The first line type particle beam source irradiates the substrate surface with the beam, the second line type particle beam source irradiates the sputter material with the beam, and the sputter material becomes the second line type particle. The sputtering material may be sputtered toward the substrate surface by beam irradiation from a beam source. As a result, each of the two line type particle beam sources can perform beam irradiation and sputter deposition on the substrate surface in the same scan. Therefore, a high-quality thin film with extremely high adhesion can be formed immediately after the activation treatment of the substrate surface. Furthermore, the surface treatment process can be performed at high speed.

  The substrate surface treatment apparatus according to the present invention may be configured such that the line type particle beam source has a grid containing conductive carbon. Thus, by forming the grid portion where the collision of the particle beam occurs most frequently with carbon instead of metal, it is possible to avoid or suppress undesirable metal radiation from the line type particle beam source. For example, it is effective when silicon and iron are used as sputtering materials and a silicon thin film is formed and then the silicon thin film is doped with iron. Previously, it was difficult to control the amount of metal radiation from a line-type particle beam such as a grid. According to this aspect of the present invention, the metal doping amount or doping conditions on the surface of the substrate to be processed can be finely and accurately controlled by controlling the sputtering conditions from the sputtering member that can be finely adjusted.

  The substrate surface treatment apparatus according to the present invention may be a substrate bonding apparatus. As a result, it is possible to form a bonding interface with less impurities and desired characteristics.

  The line-type particle beam source according to the present invention is configured to have a plurality of beam irradiation sources that are linearly arranged in the line direction and can be individually operated. According to the present invention, even if the same line type particle beam source is used, only a predetermined particle beam source having an appropriate size in the line direction is operated, and the particle beam corresponding to the size of the target substrate to be irradiated with the particle beam Can be emitted. Accordingly, surface treatment can be performed on a wide variety of substrates.

  The line-type particle beam source according to the present invention further includes a command system which is arranged in a line and is connected to each of a plurality of particle beam sources to give an operation command, and through the command system, in the line direction of the emitted particle beam. You may be comprised so that a magnitude | size can be changed. Thereby, surface treatment can be performed on substrates of many sizes with one line type particle beam source. Therefore, a multi-product process can be performed efficiently.

  The particle beam source according to the present invention can fill the atmosphere around the substrate surface with which the accelerated particles are in contact and the inside of the housing with an inert gas during non-operation, and exhaust the filled inert gas. It is comprised as follows. When the accelerated particles collide with the grid and the inside of the housing, the substances on these surfaces are blown off or scraped, and impurity particles are generated in the atmosphere. The impurity particles stay as floating in the atmosphere inside the grid and the casing as contaminants. Accordingly, when the particle beam source is continuously operated in this state, the impurity particles are emitted from the particle beam source together with the radiation of the particle beam (energy particles), and adhere as particles (contaminant particles) to the substrate surface to be processed. The adhesion of impurities such as particles deteriorates the characteristics of the substrate surface in the substrate surface treatment process, or the substrate bonding process prevents the contact of the substrate surface in the vicinity of the particle adhesion site and causes voids at the bonding interface. May be caused. The particle beam source according to the present invention introduces a particle beam source grid inside the housing and the like and impurities floating inside the housing, and introduces an inert gas (purge gas) for each operation or a certain amount of operation. The impurity particles can be discharged to the outside together with the purge gas. Therefore, the inside of the particle beam source can be kept relatively clean, and generation of particles or the like as a cause of contamination can be suppressed. Therefore, according to the present invention, it is possible to perform clean substrate surface treatment or substrate bonding.

  According to the present invention, while the surface of one substrate is treated with a line type particle beam source, it is possible to prevent a substance sputtered and scattered from the substrate from adhering or depositing on the other substrate. Therefore, surface treatment characteristics such as sputter removal on the surface of the other substrate can be controlled more accurately, and contamination by undesirable substances such as impurity deposition on the substrate surface can be prevented. Therefore, when performing substrate solid-phase bonding by surface activation treatment, there is an effect that a suitable interface activation treatment can be performed to form a bonding interface excellent in predetermined characteristics such as bonding strength.

It is a schematic front view which shows the structure of the substrate surface processing apparatus which concerns on this invention. It is a schematic perspective view which shows the structure of the substrate surface processing means which has a line type particle beam source. It is a schematic front view which shows a substrate surface treatment process. It is a schematic front view which shows a board | substrate joining process. It is a schematic front view which shows the substrate surface treatment process which concerns on one modification. It is a schematic front view which shows the substrate surface treatment process which concerns on one modification. It is a schematic front view which shows the substrate surface treatment process which concerns on one modification. It is a schematic front view which shows the substrate surface treatment process which concerns on one modification. It is a front view of a line type particle beam source having a plurality of line type particle beam sources. It is a top view of a line type particle beam source constituted by having a plurality of line type particle beam sources. It is sectional drawing of a neutral fast atom beam source. It is sectional drawing of an ion beam source. It is a schematic front view which shows the substrate surface treatment process which concerns on one modification.

  Embodiments according to the present invention will be described below with reference to the accompanying drawings.

<1. Configuration of Substrate Surface Apparatus and Substrate Surface Treatment Method>
FIG. 1 is a front view showing a schematic structure inside a substrate surface treatment apparatus 100 according to an embodiment of the present invention. Before describing the configuration and operation of the line-type particle beam source, the overall apparatus configuration will be described first. In the following, in each figure, directions and the like are shown using an XYZ orthogonal coordinate system for convenience.

  The substrate surface treatment apparatus 100 supports the substrate 301 and 302, which are the objects to be bonded, in opposition to the vacuum chamber 200 and the substrate support means 400 for relative positioning of both substrates, and the relative positional relationship between the substrates. A position measuring unit 500 for measuring and a surface processing unit 600 for performing a surface treatment on the surfaces of the substrates 301 and 302 supported to face each other are provided.

<Vacuum chamber>
The vacuum chamber 200 accommodates stages 401 and 402 of the substrate support unit 400 and a surface treatment unit 600 described later. The vacuum chamber 200 includes a vacuum pump 201 as a vacuuming means for evacuating the inside. The vacuum pump 201 is configured to discharge the gas in the vacuum chamber 200 to the outside through the exhaust pipe 202 and the exhaust valve 203.

  As the pressure in the vacuum chamber 200 is reduced (reduced pressure) in accordance with the suction operation of the vacuum pump 201, the atmosphere in the vacuum chamber 200 is brought into a vacuum or a low pressure state. Further, the exhaust valve 203 can control and adjust the degree of vacuum in the vacuum chamber 200 by the opening / closing operation and the exhaust flow rate adjusting operation.

The vacuum pump 201 has a capability of reducing the atmospheric pressure in the vacuum chamber 200 to 1 Pa (Pascal) or less. It is preferable that the vacuum pump 201 has a capability of setting the background pressure before the surface treatment means (particle beam source) 600 described below is 1 × 10 ⁻² Pa (pascal) or less. The vacuum pump 201 has the ability to make the surface treatment means 600 below 1 × 10 ⁻⁵ Pa (pascal) when the particle beam source emits particles (energy particles) having a kinetic energy of 1 eV to 2 keV. Is preferred. Thereby, the amount of impurities present in the atmosphere during the surface treatment by the particle beam source 600 can be reduced, and after the surface treatment, unnecessary oxidation of the new surface and adhesion of impurities to the new surface can be prevented. Further, since the particle beam source 600 can apply a relatively high acceleration voltage, a high kinetic energy can be imparted to the particles at a relatively high degree of vacuum. Therefore, it is considered that the surface layer can be efficiently removed and the nascent surface can be made amorphous to activate the surface.

  By pulling a relatively high vacuum by the operation of the vacuum pump 201, the substance removed from the surface layer of the substrate surface by the irradiation of the particle beam is efficiently exhausted out of the atmosphere (vacuum chamber 200). That is, undesired substances that reattach and contaminate the exposed new surface are efficiently exhausted out of the atmosphere.

<Substrate support means>
A substrate support means 400 shown in FIG. 1 has stages 401 and 402 that support the substrates 301 and 302, stage moving mechanisms 403 and 404 that move the respective stages, and pressure when the substrates are pressed together in the Z-axis direction. It has pressure sensors 408 and 411 for measuring, and a substrate heating means 420 for heating the substrate.

  The substrates 301 and 302 are attached to the support surfaces of the stages 401 and 402. The stages 401 and 402 have a holding mechanism such as a mechanical chuck or an electrostatic chuck so that the substrate can be fixedly held on the support surface or can be removed by opening the holding mechanism. It is configured.

  In FIG. 1, the lower first stage 401 is configured to include a slide-type first stage moving mechanism 403, whereby the first stage 401 is configured with respect to the vacuum chamber 200 or the upper second stage 402. Can be translated in the X direction.

  In FIG. 1, the upper second stage 402 includes an XY direction translation mechanism 405, which is also referred to as an alignment table, whereby the second stage 402 is relative to the vacuum chamber 200 or the lower first stage 401. It can be translated in the XY directions.

  The second stage 402 has a Z-direction up-and-down moving mechanism 406 connected to the alignment table 405, whereby the second stage 402 moves in the up-down direction or the Z-direction, and the Z-direction between both stages 401 and 402 is The interval can be changed or adjusted. Moreover, both the stages 401 and 402 can make the pressurization after contacting the contact surfaces which the board | substrates 301 and 302 which hold | maintain face each other.

  Therefore, the substrate surface treatment apparatus 100 shown in FIG. 1 can also be used as a substrate bonding apparatus.

  A Z-axis pressure sensor 408 that measures the force related to the Z-axis is disposed in the Z-direction lifting and moving mechanism 406, thereby measuring the force related to the direction perpendicular to the joint surface that is in contact under pressure, and the joint surface Can be calculated. For the Z-axis pressure sensor 408, for example, a load cell may be used.

  Between the alignment table 405 and the second stage 402, three stage pressure sensors 411 and a piezo actuator 412 in the Z-axis direction in each stage pressure sensor 411 are provided. Each set of the stage pressure sensor 411 and the piezo actuator 412 is arranged at three different positions on the same line on the substrate support surface of the second stage 402. More specifically, each set including three stage pressure sensors 411 and three piezo actuators 412 is arranged at substantially equal intervals in the vicinity of the outer peripheral portion in the substantially circular upper surface of the substantially cylindrical second stage 402. Has been. The three pressure detection sensors 411 connect the upper end surfaces of the corresponding piezoelectric actuators 412 and the lower surface of the alignment table 405. As a result, the force or pressure distribution applied to the bonding surface of the substrates can be measured by the stage pressure sensor 411. The distribution of the force or pressure is finely or accurately adjusted by extending or contracting the piezoelectric actuator 412 in the Z direction independently of each other, or the force or pressure applied to the bonding surface of the substrate is uniform or predetermined over the bonding surface. It is possible to control so that the distribution is.

  The second stage 402 is provided with a rotation moving mechanism 407 around the Z axis, and can rotate the second stage 402 around the Z axis. The rotational movement mechanism 407 can control the rotational position θ around the Z-axis of the second stage 402 relative to the first stage 401 to control the relative position of both substrates in the rotational direction.

  In the embodiment shown in FIG. 1, the Z-direction lifting / lowering mechanism 406 is configured to be connected to the substrate support unit 400, but is not limited thereto. For example, instead of bringing the substrates into contact with each other in the vacuum chamber 200 and bonding them, a bonding mechanism (not shown) that moves to a chamber other than the vacuum chamber 200 after surface treatment and brings the substrates into contact with each other to bond them. May be arranged.

<Position measuring means>
A substrate surface processing apparatus 100 shown in FIG. 1 includes a window 503 provided in a vacuum chamber 200, a light source (not shown), and a position measuring unit 500 for measuring the relative positional relationship between the substrates 301 and 302. The light emitted from the light source, passes through the portion (not shown) provided with the marks on both the substrates 301 and 302, passes through the window 503, and propagates outside the vacuum chamber 200 and images the shadow of the mark. It has a plurality of cameras 501 and 502.

  The position measuring unit 500 shown in FIG. 1 includes mirrors 504 and 505 that refract light propagating in the Z direction in the XY plane direction, and the cameras 501 and 502 are arranged to image light refracted in the Y direction. ing. With this configuration, the size of the device in the Z-axis direction can be reduced.

  In FIG. 1, the cameras 501 and 502 each have a coaxial illumination system. The light source may be provided on the upper side of the first stage 401, or may be provided so as to emit light so as to travel along the optical axis from the camera 501 or 502 side. In addition, as the light of each coaxial illumination system of the cameras 501 and 502, a wavelength region (for example, the substrate can be made of silicon) that passes through portions where the marks are provided on the substrates 301 and 302 and portions where light should pass such as both stages. If it is, infrared light) is used.

<Board alignment method>
The substrate surface processing apparatus 100 uses the position measuring means 500, each moving mechanism for positioning the stage, and a computer 700 connected thereto, in the horizontal direction (X and Y directions) and around the Z axis. With respect to the rotation direction (θ direction), the position (absolute position) of each of the substrates 301 and 302 in the vacuum chamber 200 or the relative position between the substrates 301 and 302 can be measured and controlled. Yes.

  In the substrates 301 and 302, a portion through which measurement light passes is defined, and a mark is attached here to block or refract part of the passing light. When the cameras 501 and 502 receive the passing light, the mark appears dark in the captured image that is a bright field image. Preferably, a plurality of marks are provided on the substrate, for example, at two opposite corners of the substrate. Thereby, the absolute position of the substrate 301 or 302 can be specified from the positions of the plurality of marks.

  Preferably, corresponding marks are attached to corresponding portions of the substrates 301 and 302, for example, positions overlapping in the Z direction during bonding. Both marks on the substrates 301 and 302 are observed within the same field of view, and their relative deviations (Δx, Δy) are measured. By measuring the relative displacements (Δx, Δy) at a plurality of locations, the relative positions (ΔX, ΔY, Δθ) between the substrates 301 and 302 can be calculated.

  In response to the relative positions (ΔX, ΔY, Δθ) between the substrates 301, 302, an instruction is issued from the computer 700, and the substrates are moved to the moving mechanisms of the stages 401, 402 (−ΔX, −ΔY, −Δθ). Just move.

  In order to accurately measure the relative positions of the substrates 301 and 302, they may be approached or brought into contact with each other. In this case, when the stages 401 and 402 are moved, the substrates 301 and 302 may be separated from each other.

  The relative position measurement and positioning operation may be repeated a plurality of times.

<Substrate heating means>
Stages 401 and 402 in FIG. 1 incorporate heaters 421 and 422 as substrate heating means 420, respectively. The heaters 421 and 422 are configured to generate Joule heat with, for example, an electric heater. The heaters 421 and 422 conduct heat through the stages 401 and 402 to heat the substrates 301 and 302 supported by the stages 401 and 402. By controlling the amount of heat generated by the heaters 421 and 422, the temperature of the substrates 301 and 302 and the temperature of the bonding surface of each substrate can be adjusted and controlled.

<Surface treatment means>
As shown in FIGS. 1 and 2, the surface treatment means 600 includes a line type particle beam source 601 and a shielding member 602. 1 and 2, the surface treatment means 600 further moves the line-type particle beam source 601 and the shielding member 602 parallel to the substrates 301 and 302, or the line direction of the line-type particle beam source 601 or the like. And a beam source moving mechanism 603 that swings around (X direction).

  FIG. 2 is a bird's-eye schematic diagram for explaining the configuration of the surface activation means 600 having the line-type particle beam source 601 in an easy-to-understand manner.

  As shown in FIG. 2, the line type particle beam source 601 is arranged so that the line direction or the longitudinal direction is parallel to the X direction. The shielding member 602 is formed in a rectangular plate shape, and its length in the longitudinal direction is substantially the same as the length in the longitudinal direction of the line-type particle beam source 601, parallel to the line direction of the line-type particle beam source 601. They are arranged so as to be parallel to the X direction.

  The line-type particle beam source 601 and the shielding member 602 are configured to translate by a beam source moving mechanism 603 in the Y direction, which is substantially perpendicular to the longitudinal direction of the two, while maintaining a constant interval in the Y direction. Has been. In order to keep the interval in the Y direction constant, the line-type particle beam source 601 and the beam source moving mechanism 603 may be connected by a mechanical member. Further, the distance in the Y direction may be kept constant by moving the line type particle beam source 601 and the beam source moving mechanism 603 at the same speed.

  A plurality of linear guides 604, 605, 606 stretched in the Y direction translate or move a desired distance in the Y direction while supporting both ends of the line-type particle beam source 601 and the shielding member 602 in the longitudinal direction. It can be made to position to.

  In FIG. 2, the linear guide 604 supports one end of each of the line type particle beam source 601 and the shielding member 602 so as to be movable in the Y direction. The linear guide 604 includes a screw 604a extending in the Y direction, a nut 604b that moves by rotating the screw 604a in the longitudinal direction, and a servo motor 604c that rotates the screw 604a. The nut 604b supports the line-type particle beam source 601 and the shielding member 602 so as to be rotatable around respective rotation axes in the X direction and fixed in the XYZ directions. In FIG. 2, the nut 604b also has a function of keeping the distance or distance in the Y direction between the line-type particle beam source 601 and the shielding member 602 constant.

  The linear guides 605 and 606 are arranged parallel to each other in the Z direction, and respectively support the other ends of the line type particle beam source 601 and the shielding member 602 so as to be movable in the Y direction. Further, the linear guides 605 and 606 are rotary linear guides that can be rotated around the respective longitudinal axes, and the rotation is caused by the line direction (X of the line type particle beam source 601 and the shielding member 602). Direction) and a mechanism for transmitting the rotational motion around the rotational axes 609 and 610. Specifically, each of the rotary linear guides 605 and 606 includes rotary gears 607L and 608L that can move in parallel in the Y direction, and the rotary gear 607G and the shielding member 602 connected to the line type particle beam source 601 respectively. Are connected to a rotating gear 608S connected to each other by a gear. The rotation gears 607L, 608L, 607G, and 608G are bevel gears, and can convert rotational motion between the meshing rotational gears into rotational motion around the vertical rotational axis and transmit the rotational motion. These gears use bevel gears, but are not limited thereto. For example, a worm gear may be adopted.

  With the above configuration, the rotary linear guides 605 and 606 are rotated or swung about the X direction axis, and the swing of the line type particle beam source 601 and the shielding member 602 about the Y direction axis is controlled by the rotation angle. Or it can be set.

  In addition, the rotary linear guides 605 and 606 are individually connected to the line particle beam source 601 and the shielding member 602, and the rotation angles of the line particle beam source 601 and the shielding member 602 around the Y direction axis can be independently set. It can be controlled or set.

  The line type particle beam source 601 can translate in the Y direction on the substrate 301 while emitting the particle beam B while maintaining a predetermined angle around the rotation axis 609 with respect to the surface of the substrate 301. At a certain time, the line-type particle beam source 601 irradiates a band-shaped irradiation region R extending in the X direction on the substrate 301 with the particle beam B. As the translational movement in the Y direction occurs, the irradiation region B is applied to the substrate 310. Scan the surface.

  The shielding member 602 is disposed with the predetermined distance in the Y direction from the line type particle beam source 601, and shields sputtered particles scattered from the substrate 301 by the beam irradiation of the line type particle beam source 601. The linear particle beam source 602 translates in the Y direction while maintaining a predetermined angle around the rotation axis 610 with respect to the surface of the substrate 301.

  By scanning at a constant speed while keeping the radiation condition of the particle beam B constant, the particle beam can be irradiated on the entire surface of the substrate 301 under a very uniform condition. The irradiation amount per unit area of the particle beam B on the substrate can also be adjusted by the scanning speed of the particle beam source 601 with respect to the substrate 301.

  As shown in FIGS. 3A and 3B, the line-type particle beam source 601 and the shielding member 602 are configured to be rotatable around rotation axes 609 and 610, respectively. Therefore, after performing the particle beam irradiation scan on the substrate 301 (FIG. 3A), the same process as the substrate 301 can be performed on the substrate 302 (FIG. 3B).

The shielding member 602 and the line-type particle beam source are respectively used when the particle beam irradiation scan is performed on the substrate 301 (FIG. 3A) and when the particle beam irradiation scan is performed on the substrate 302 (FIG. 3B). 601 is configured so that the respective rotation angles α and β (reference arbitrary) can be set to predetermined rotation angles α _I1 and β _I1 (FIG. 3A) and α _I2 and β _I2 (FIG. 3B), respectively. .

That is, as shown in FIG. 3A, when performing a particle beam irradiation scan on the substrate 301, the line-type particle beam source 601 is set to a predetermined angle α _I1 and the shielding surface 611 of the shielding member 602 is set to a predetermined angle. The angle β _I1 is set to substantially face the substrate 301, and the sputtered particles P scattered from the substrate 301 by sputtering by particle beam irradiation are blocked by the shielding surface 611. Thereby, it is possible to prevent the sputtered particles from the substrate 301 from adhering to the other substrate 302 arranged opposite to the other substrate 302 or to suppress the adhering amount to the minimum.

The line-type particle beam source 601 and the shielding member 602 are scanned on the substrate 301 while being maintained at the rotation angles α _I1 and β _I1 . As a result, the beam irradiation region R _I1 scans the substrate 301, and the beam irradiation can be performed uniformly over the entire surface of the substrate 301.

  With such a configuration, as shown in FIG. 3A, particle beam irradiation onto the substrate 301 can be scanned while avoiding or minimizing the adhesion of sputtered particles P to the substrate 302. Accordingly, the particle beam irradiation to the substrate 302 can be performed almost ideally thereafter. That is, if the sputtered particles P adhere to the substrate 302 during the particle beam irradiation to the substrate 301, it is necessary to set the particle beam irradiation time longer than the processing of the original substrate 302 alone in order to remove it. Become. Alternatively, in the case where undesirable impurities are attached to the substrate 302, the impurities sneak into or mix with the base material of the substrate 302 due to the collision of atoms caused by particle beam irradiation. May be modified. According to the present invention, such a problem can be avoided or suppressed to a minimum.

In addition, as illustrated in FIG. 3B, when the particle beam irradiation is performed on the substrate 302, sputtered particles scattered from the substrate 302 are blocked by a shielding member 602. Therefore, it is possible to avoid or suppress the adhesion of the sputtered particles B to the region R _{I1 of the} substrate 301 that has completed the particle beam irradiation. Thereby, the predetermined property of the substrate 301 surface region R _I1 obtained by the particle beam irradiation can be maintained. For example, the present invention is effective for activating the surfaces of both substrates 301 and 302 for room temperature solid phase bonding. The surface of the substrate 301 once surface-activated by particle beam irradiation can maintain its activity during the surface activation process of the surface of the substrate 302. Therefore, even if the substrate surface is activated alternately, it is possible to form a solid-phase bonding interface with high bonding strength and less impurity contamination.

  As shown in FIGS. 3A and 3B, the line-type particle beam source 601 and the plate-shaped shielding member 602 can be rotated around a rotation axis parallel to the X direction, and may be disposed close to each other. For example, when only the line type particle beam source 601 is rotated toward the substrate 302 after the beam irradiation to the substrate 301 is finished in a state where the plate-like shielding member 602 is parallel to the substrate surface, the line type particle beam source 601 is rotated. May be arranged close enough to collide with or come into contact with the plate-shaped shielding member 602. In such a case, the plate-shaped shielding member 602 is rotated so that the side of the plate-shaped shielding member 602 on the line-type particle beam source 601 side approaches the substrate 301 side, and then the line-type particle beam source 601 is moved. By rotating toward the substrate 302, the posture can be changed so as to face the substrate 302 without contacting the plate-shaped shielding member 602. Thereafter, the plate-shaped shielding member 602 can be rotated and positioned at a position parallel to the substrate surface for beam irradiation of the substrate 302. The same applies to the following modified examples.

  In FIG. 3B, the line type particle beam source 601 moves from the left to the right (−Y direction) on the drawing with respect to the substrate 302, but the particle beam irradiation is performed while moving from the right to the left (+ Y direction). You may go. The particle beam irradiation may be performed by moving the line type particle beam source 601 and the shielding member 602 from the left to the right with respect to the substrate 301 and performing the particle beam irradiation with respect to the substrate 302 from the right to left. . As a result, the moving distance can be shortened compared to the case where the particle beam irradiation is performed by moving any of the substrates in the same direction (for example, from the left to the right in the drawing), thereby improving the process efficiency.

  That is, it is possible to prevent the sputtered particles scattered from the substrate 302 from being attached to the substrate 301 while scanning and executing the particle beam irradiation on the substrate 302 with respect to the substrate 302.

  The distance between the line type particle beam source 601 and the shielding member 602 need not always be the same. For example, when the scattering direction of the sputtered particles differs between the substrate 301 and the substrate 302 due to a difference in the scanning direction, the interval may be changed. In other words, the shielding member 602 has a size, shape, or posture that efficiently shields the sputtered particles that are scattered under each condition of particle beam irradiation, and prevents or minimizes reaching the other substrate. What is necessary is just to be comprised.

  For example, for each predetermined process or scan, the angle of the line-type particle beam source 601 formed on the substrate surface, the type and kinetic energy of the particle beam (energy particles), the material of the substrate surface, the surface shape, the crystal direction, etc. Depending on the conditions, the scattering direction and scattering angle of the sputtered particles change. Accordingly, the angle and size of the shielding member 602, the position or posture of the line type particle beam source 601 and the substrates 301 and 302, etc. are set so as to efficiently shield the scattered sputtered particles according to the predetermined beam irradiation conditions. The device may be configured so that it can be changed.

  For example, members positioned between the substrates during processing, such as the particle beam source 601 and the shielding member 602, can be brought into contact between the substrates so that the surfaces of both the substrates that have been surface-treated for the bonding process can be brought into contact with each other. It is preferably configured to be able to move outside the space (FIGS. 3C and 3D). For example, the particle beam source 601 and the shielding member 602 are preferably configured to be able to leave the space between the substrates in the Y direction that translates during surface treatment.

  As a result, as soon as the predetermined surface treatment is completed, the particle beam source 601 and the shielding member 602 and the like quickly leave the space between the substrates (FIG. 3C) and bring the substrate surfaces into contact with each other (FIG. 3D). it can. Therefore, it is possible to efficiently form a clean and high bonding strength interface while minimizing the adhesion of undesirable impurities from the residual atmosphere due to exposure of the substrate surface after processing to the residual atmosphere.

  Note that pressure may be applied when the substrate surfaces are brought into contact with each other.

  In the above embodiment, the line type particle beam source 601 and the blocking member 602 are configured to move between two substrates in a direction parallel to the substrate surface, but are not limited thereto. The apparatus may be configured so that the line-type particle beam source 601 and the like appropriately move between the substrates depending on various cases such as a case where the substrate is not two-dimensionally flat.

  In the above embodiment, the line-type particle beam source 601 and the shielding member 602 are arranged so that the longitudinal direction is substantially parallel to the line direction (X direction), and substantially perpendicular to the line direction (X direction) (Y direction). However, the present invention is not limited to this. The longitudinal direction of the line type particle beam source 601 or the like does not have to be perpendicular (90 degrees) to the translational movement direction. For example, the apparatus is configured to form a predetermined angle (60 degrees, 45 degrees). Also good. The apparatus may be configured such that the predetermined angle is variable for each scan.

  In the example shown in FIG. 3, the line-type particle beam source 601 is configured by a single line-type particle beam source 601 and configured to be able to perform beam irradiation on both the substrates 301 and 302. It is not limited to this. For example, the line type particle beam source 601 may be constituted by a plurality of line type particle beam sources 601.

  For example, a line type particle beam source 601 shown in FIGS. 11A and 11B includes a first line type particle beam source 6011 and a second line type particle beam reduction 6012 and is disposed between two opposing substrates. Yes. The first line type particle beam source 6011 can be configured to perform beam irradiation on the first substrate, and the second line type particle beam source 6012 can be configured to perform beam irradiation on the second substrate.

  In this case, the shielding member 602 is disposed between the substrates and shields sputtered particles scattered from both substrates. That is, the surface 6021 of the shielding member 602 facing the substrate 301 is sputtered particles scattered from the substrate 301 toward the substrate 302 by beam irradiation of the first substrate line particle beam source (first line particle beam source) 6011. , So that the sputtered particles are prevented from adhering to the substrate 302 or minimized. On the other hand, the surface 6022 of the shielding member 602 facing the substrate 302 is sputtered particles scattered from the substrate 302 toward the substrate 301 by beam irradiation of the second substrate line particle beam source (second line particle beam source) 6012. , So that the sputtered particles are prevented from adhering to the substrate 301 or minimized.

  The shielding member 602 is formed in a plate shape. When the opposing surfaces of both substrates are parallel, the plate-shaped shielding member 602 is disposed so that the surface direction of the plates is parallel to the surfaces of both substrates. With this configuration, an efficient substrate surface treatment can be performed, and a substrate surface treatment apparatus can be made smaller.

  Both line type particle beam sources 6011 and 6012 and the shielding member 602 are translated in the Y direction or parallel to the substrate surface while the line type particle beam sources 6011 and 6012 are operated to irradiate the substrate 301 and 302 with the particle beam. By moving it, the particle beam irradiation processing for both substrates can be performed in the same scan. Therefore, efficient and clean substrate surface treatment becomes possible.

  When two opposing substrates are arranged in parallel, as shown in FIGS. 11A and 11B, both line type particle beam sources 6011, 6012 and the shielding member 602 are preferably disposed. With this configuration, the two-line particle beam sources 6011 and 6012 and the shielding member 602 can be scanned with respect to the substrates 301 and 302 at the same speed or while maintaining the relative positional relationship between them. . Thereby, it is possible to simultaneously irradiate both the substrates 301 and 302 and simultaneously shield the sputtered particles scattered from the respective substrates 301 and 302 by the beam irradiation. Accordingly, it becomes possible to perform clean substrate surface treatment on both substrates simultaneously and extremely efficiently.

In the configuration shown in FIG. 11A, the first substrate line type particle beam source 6011 and the second substrate line type particle beam source 6012 are arranged on the traveling direction side with respect to the shielding member 602, and the directions are reversed from the Y direction. _Are set to rotation angles α1 _I1 and α2 _I1 , which are substantially the same angle. Both the substrate-type particle beam sources 6011 and 6012 can perform beam irradiation on the beam irradiation regions R _I1 and R _I2 at substantially the same Y-direction positions of the substrates 301 and 302, respectively. The plate-shaped shielding member 602 has an appropriate shape, and is disposed at an appropriate Y-direction position with respect to the line type particle beam sources 6011 and 6012 for both substrates, so that the spatter scattered from both the substrates 301 and 302 is obtained. Particles can be shielded.

  Although not shown, the first substrate line type particle beam source 6011 and the second substrate line type particle beam source 6012 are both arranged on the opposite side of the traveling direction with respect to the shielding member 602. Also good.

  In the configuration shown in FIG. 11B, the first substrate line type particle beam source 6011 and the second substrate line type particle beam source 6012 are disposed on the traveling direction side and the traveling direction opposite side with respect to the shielding member 602, respectively. Has been. In this case, the shielding member 602 is arranged substantially symmetrically about the longitudinal axis. The shielding member 602 is located substantially at the center of the line type particle beam sources 6011 and 6012 for both substrates, and can shield the sputtered particles scattered from both the substrates 301 and 302 by having an appropriate shape.

The configuration in which surface treatment is performed on each substrate using such two line type particle beam sources can also be applied to a configuration having a sputtering member described below.

<Line-type particle beam source>
The particle beam B emitted from the line type particle beam source 601 may contain ions, neutral atoms, radical species, or a mixture of these. That is, the particle beam source 601 may be an ion beam source or a neutral atom beam source. In order to emit neutral atoms, for example, a configuration in which ions are accelerated by applying a predetermined kinetic energy and then neutralized by passing an electron cloud or the like may be used. Such neutralization of accelerated ions can be performed with almost no loss of a given predetermined kinetic energy. Examples of the particle beam source 601 that emits particles having a predetermined kinetic energy include a cold cathode type, a hot cathode type, a PIG (Penning Ionization Gauge) type, an ECR (Electron Cyclotron Resonance) type particle beam source, or a cluster ion source. It can be adopted.

  Surface activation can be performed by irradiating the surface of the substrate with a particle beam. By the surface activation treatment, the substrate surfaces can be solid-phase bonded to each other at normal temperature or non-heating, or the thermal budget (heating temperature, heating time) of heating can be reduced to obtain a relatively strong bonding. .

  As the neutral atom beam source, a fast atom beam source (FAB, Fast Atom Beam) can be used. Fast atom beam sources (FABs) typically generate a plasma of gas, apply an electric field to the plasma, extract the cations of particles ionized from the plasma, and pass them through an electron cloud. It has the composition which becomes. In this case, for example, when argon (Ar) is used as the rare gas, the power supplied to the fast atom beam source (FAB) may be set to 1.5 kV (kilovolt), 15 mA (milliampere), or 0.1 To a value between 500 W (watts). For example, when a fast atom beam source (FAB) is operated at 100 W (watts) to 200 W (watts) and irradiated with a fast atom beam of argon (Ar) for about 2 minutes, the oxide, contaminants, etc. (surface) Layer) can be removed to expose the nascent surface.

  The ion beam source may be used, for example, operated at 110 V and 3 A to accelerate argon (Ar) and irradiate the bonding surface for about 600 seconds. As other conditions, an acceleration voltage of 1.5 to 2.5 kV and a current of 350 to 400 mA may be adopted, and as other conditions, an acceleration voltage of 1.0 to 2.0 kV and a current of 300 to 500 mA are adopted. May be.

As other beam irradiation conditions, the background pressure in the vacuum chamber 200 is set to 10 ⁻⁶ Pa, Ar is supplied as a gas at a flow rate of 100 sccm, the pressure in the vacuum chamber 200 is set to 10 ⁻³ Pa or less, and the particle beam source 600 may be operated at 2 kV and 20 mA, and the scanning speed of the particle beam source 600 with respect to the substrates 301 and 302 may be 10 mm / s.

  Each of the beam irradiation conditions described above is for illustrative purposes and is not limited thereto. It can be appropriately changed according to the configuration of each apparatus, beam irradiation conditions, physical properties of a processing target such as a substrate, and the like.

  For example, in the present invention, the particles emitted from the particle beam source may be neutral atoms or ions, may be radical species, or may be a particle group in which they are mixed.

  An inert gas other than argon (Ar) may be used for the particle beam. Alternatively, nitrogen may be used. Alternatively, oxygen or water may be used.

  In the line-type particle beam source, it is preferable that a portion in contact with the emitted particle beam (energy particles) at or near the emission port is made of conductive carbon. For example, a neutral atom beam source grid such as FAB, that is, a particle beam source grid, is a place where collision of emitted particle beams is intense.

  Since conventional grids were constructed of a metal such as stainless steel, the metal of the grid was released with the operation of the particle beam source, causing undesirable metal to adhere to the substrate being processed. Such undesirable adhesion of substances leads to deterioration of the properties of the bonding interface formed by the surface treatment and subsequent bonding, and is a cause of the surface treatment not being properly controlled.

  Therefore, by forming the grid of the particle beam source with carbon, metal emission from the particle beam source can be avoided or minimized. Furthermore, by using a metal as the sputter material and depositing the metal by sputter deposition, the metal is deposited on the substrate surface of the sputter material compared to the case where the metal is deposited uncontrolled or incompletely controlled from the particle beam source. It is possible to accurately control the amount of deposition.

  In the case of a fast atom beam source (FAB), the grid functions as an electrode (cathode) for emitting electrons. Thus, when a grid has an electrical function, it is preferable to be configured to have conductivity. That is, the particle beam source 601 is preferably composed of conductive carbon. The position of the grid can be understood with reference to FIG.

  Even in the case of an ion beam source (ion gun, IG), the grid is preferably formed of carbon. The position of the grid can be understood with reference to FIG.

  In addition, the particle beam source 601 can fill the atmosphere around the surface where accelerated particles contact and the inside of the housing with an inert gas during non-operation, and exhaust the filled inert gas. It may be configured.

  Impurity particles are generated in the atmosphere by blasting off or scraping off these surface materials by collision of the accelerated particles with the grid and the inside of the housing. Impurity particles (particles) remain in the atmosphere inside the grid and the case as contaminants and float. When the particle beam source is continuously operated in this state, particles are emitted together with the radiation of the particle beam (energy particles), and the particles adhere to the surface of the substrate to be processed. The adhesion of impurities such as particles deteriorates the characteristics of the substrate surface in the substrate surface treatment process, or the substrate bonding process prevents the contact of the substrate surface in the vicinity of the particle adhesion site and causes voids at the bonding interface. May be caused. Therefore, the particle beam source having the above configuration introduces an inert gas (purge gas) for each operation or a certain amount of operation, with the particle beam source grid and impurities floating inside the case inside the case. Thus, the impurity particles (particles) can be exhausted together with the purge gas. Thereby, the inside of the particle beam source can be kept relatively clean. Therefore, by using the particle beam source having the above configuration, it is possible to perform clean substrate surface treatment or substrate bonding.

  The grid formed of the conductive carbon is effective for both a line type particle beam source and a non-line type particle beam source.

  Depending on the operating conditions of each particle beam source or the kinetic energy of the emitted particles, the removal rate of the surface layer can vary. Therefore, it is necessary to adjust the necessary surface treatment time. For example, the presence of oxygen and carbon contained in the surface layer is confirmed using surface analysis methods such as Auger Electron Spectroscopy (AES, Auger Electron Spectroscopy) and X-ray Photoelectron Spectroscopy (XPS, X-ray Photo Electron Spectroscopy). You may employ | adopt as the processing time of surface treatment the time which becomes impossible or longer than that.

  In order to make the substrate surface amorphous in the surface treatment, the particle irradiation time may be set longer than the time necessary for removing the surface layer and exposing the new surface. The lengthening time may be set to 10 to 15 minutes, or 5% or more of the time required for removing the surface layer and exposing the new surface. The time for amorphizing the substrate surface in the surface treatment may be appropriately set depending on the type and nature of the material forming the substrate surface and the irradiation conditions of particles having a predetermined kinetic energy.

  In order to make the substrate surface amorphous in the surface treatment, the kinetic energy of the irradiated particles may be set 10% or more higher than the kinetic energy required to remove the surface layer and expose the new surface. The kinetic energy of the particles for amorphizing the substrate surface in the surface activation treatment may be appropriately set depending on the type and properties of the material forming the substrate surface and the irradiation conditions of the particles.

  Here, the “amorphized surface” or “surface with disordered crystal structure” specifically includes an amorphous layer whose presence has been confirmed by measurement using a surface analysis technique or a layer with a disordered crystal structure, This is a conceptual term that expresses the state of the crystal surface assumed when the particle irradiation time is set to be relatively long or the particle kinetic energy is set to be relatively high. It includes a surface in which the presence of an amorphous layer or a surface having a disordered crystal structure is not confirmed by the measurement used. Also, “amorphize” or “disturb the crystal structure” conceptually represents the operation for forming the amorphized surface or the surface in which the crystal structure is disturbed. These surfaces have a relatively high surface energy and are useful for solid phase bonding at room temperature or under unheated or low thermal budget.

  In order to maintain this high surface energy, it is necessary to prevent or minimize the adhesion of sputtered particles by the shielding member 602. In the absence of the shielding member 602, deposition of several nm to several tens of nm was confirmed on the substrate 302 after one scan of beam irradiation on the substrate 301. However, according to the configuration of the present invention having the shielding member 602, it is practically impossible to measure the deposition of particles scattered from one substrate 301 on the other substrate 302.

  By using the apparatus having the configuration described above or below, the line-type particle beam source is placed between two opposing substrates by the line-type particle beam source. A particle beam (energetic particles) can be emitted toward the opposite surface. At that time, the scattering member can be shielded or blocked from the surface of the substrate that is irradiated with the particle beam by the sputtering phenomenon or in connection with the sputtering phenomenon by the shielding member between the two opposing substrates. By such a substrate surface treatment method, a substance released from the one substrate by beam irradiation can be prevented from being attached to the other substrate, or avoided or minimized.

  On the surface of the substrate before the surface treatment, there are impurities such as oxides formed on the base material itself or attached organic substances. These oxides and the like sputtered and scattered by the beam irradiation can adhere to the surface of other substrates or the chamber and cause contamination. Further, when the base material of one substrate is sputtered and adhered or deposited on the surface of another substrate, the characteristics of the surface of the other substrate may be changed. In addition, the deposition on the other substrate may be performed in the surface treatment of the substrate, for example, by changing the surface removal time by the beam irradiation or the condition of the surface activation treatment. This may cause uneven surface treatment conditions. By performing the above-described substrate surface treatment method, the influence of substances scattered from the substrate to be treated on the surface of another substrate can be avoided or minimized. Therefore, when performing substrate solid-phase bonding by surface activation treatment, an appropriate surface activation treatment can be performed to form a bonding interface excellent in predetermined characteristics such as bonding strength.

  In FIGS. 3A and 3B, the shielding member has a function of shielding a substance scattered from one of the substrates. However, as shown in FIGS. 4A and 4B, the plate-like shielding member 602 includes: One surface may be a shielding surface (shielding surface 611), and the other surface may be configured with a sputtering member 612 made of a sputtering material.

The shielding member 602, the line type particle beam source 601 and the case of performing the particle beam irradiation scan on the substrate 301 (FIG. 4A) and the case of performing the sputter deposition on the substrate 301 (FIG. 4B), respectively. Is configured such that the respective rotation angles α and β (reference arbitrary) can be set to predetermined rotation angles α ′ _I1 and β ′ _I1 (FIG. 4A), α ′ _S1 and β ′ _S1 (FIG. 4B), respectively. ing.

That is, as shown in FIG. 4A, when performing a particle beam irradiation scan on the substrate 301, the line type particle beam source 601 is set to a predetermined angle α ′ _I1 and the shielding surface 611 of the shielding member 602 is set to a predetermined value. The angle β ′ _I1 is set substantially toward the substrate 301. Line-type particle beam source 601 Sputtered particles P scattered from the substrate 301 by sputtering by particle beam irradiation are blocked by the shielding surface 611. Thereby, it is possible to prevent the sputtered particles from the substrate 301 from adhering to the other substrate 302 arranged opposite to the other substrate 302 or to suppress the adhering amount to the minimum.

Then, the line-type particle beam source 601 and the shielding member 602, the above-described rotation angle [alpha] _'I1, remains kept at .beta.' _I1, is on the substrate 301 is scanned (scan). As a result, the beam irradiation region R _I1 scans the substrate 301, and the beam irradiation can be performed uniformly over the entire surface of the substrate 301.

Next, as shown in FIG. 4B, after the particle beam irradiation scan for the substrate 301, the shielding member 602 and the line type particle beam source 601 are rotated around the respective rotation axes. The shielding member 602 is positioned at an angle β ′ _{S1 at} which the sputtered material 612 on the sputter surface can be seen from both the line beam irradiation source 601 and the substrate 301. The line beam irradiation source 601 is positioned at an angle α ′ _S1 that emits the particle beam B toward the sputtered material 612. The angle β ′ _S1 of the shielding member 602 is preferably selected so that the sputtered material reaches or deposits on a desired substrate region efficiently by being sputtered by the particle beam B.

Then, the line-type particle beam source 601 and the shielding member 602, the above-described rotation angle [alpha] _'S1, remains kept at .beta.' _S1, is on the substrate 301 is scanned (scan). This allows the beam irradiation region R _s1 is scanned over the substrate 301, thereby uniformly sputter depositing F ₁ over the entire substrate 301 surface.

  After performing beam irradiation and sputter deposition on the substrate 301 (FIGS. 4A and 4B), beam irradiation and sputter deposition are performed on the substrate 302 in the same manner as the substrate 301 (FIGS. 4C and 4D). As described above, even if the line-type particle beam source 601 and the plate-shaped shielding member 602 are arranged close to each other, the direction of the line-type particle beam source 601 can be changed to face the substrate 302.

At the time of beam irradiation on the substrate 302 shown in FIG. 4C, the line type particle beam source 601 is positioned at a position opposite to that in FIG. 4A. The predetermined angle α ′ _I2 and the shielding surface 611 of the shielding member 602 are set to a predetermined angle β ′ _I2 . As a result, the beam irradiation region R _I2 scans the substrate 302, and the beam irradiation can be performed uniformly over the entire surface of the substrate 302.

4D, the line-type particle beam source 601 is set to a predetermined angle α ′ _S2 and the shielding surface 611 of the shielding member 602 is set to a predetermined angle β ′ _S2 . As a result, the beam irradiation region R _s2 scans the substrate 302, and the sputter deposition F ₂ can be uniformly performed over the entire surface of the substrate 302.

4C and 4D, the rotation angles α ′ _I2 and α ′ _{S2 of the} particle beam source 601 are the same, that is, the position of the line type particle beam source 601 is the same, but is not limited thereto. Depending on predetermined sputtering conditions, the rotation angles α ′ _I2 and α ′ _S2 may be different angles.

  For example, the rotation angle of the line type particle beam source 601 may be set so that the direction of the particle beam is in a range of 30 ° to 60 ° with respect to the substrate surface, or may be set to be 90 °. Good. Alternatively, other angles can be adopted depending on the beam irradiation conditions.

  As an example, a transition metal such as iron (Fe) may be employed as a sputter member for a silicon (silicon, Si) substrate.

  The transition metal is preferably deposited on the silicon thin film so as to contain 0.1 to 30 atomic% in the vicinity of the surface of the silicon substrate. Furthermore, the transition metal is preferably deposited on the silicon substrate so as to contain 3 to 10 atomic% in the vicinity of the surface of the silicon substrate.

  By bringing the substrate after the surface treatment into contact with appropriate transition metal doping, a strong bonding interface can be formed without heating or with a small thermal budget (heating temperature, heating time).

  If the content of the transition metal in the vicinity of the silicon substrate surface is smaller than a predetermined amount, the bonding strength at the bonding interface formed by subsequent bonding may not be sufficiently increased.

  Further, if the content of the transition metal in the vicinity of the silicon thin film surface is larger than a predetermined amount, it may not be preferable in the surface treatment.

  By using the apparatus having the configuration described above or below, a sputter material can be sputter deposited on the surface of the substrate on which the beam irradiation has been performed.

  In the configuration shown in FIG. 3, FIG. 4 or FIG. 5 described below, the line type particle beam source can rotate around an axis substantially parallel to the line direction, but is not limited thereto. Generally, the line type particle beam source only needs to be swingable. More generally, the line-type particle beam source may be configured to selectively perform beam irradiation on the substrate and beam irradiation on the sputtering material.

  Thereby, it is possible to perform both direct particle beam irradiation on the surface of the substrate and sputter deposition on the surface of the substrate by using a single line type particle beam source. In order to perform at least two surface treatments, a plurality of line-type particle beam sources are not required, and the apparatus can be configured with only a single line-type particle beam source. Therefore, the surface processing apparatus or the substrate bonding apparatus including the line type particle beam source can be designed and made small, and the atmosphere around the substrate can be easily controlled by saving space.

  After performing the surface treatment shown in FIGS. 4A to 4D, it is preferable to be configured to be able to leave the space between the substrates as in FIGS. 3C and 3D.

Thereby, for example, a desired sputtered film S _I1 is maintained on the substrate 301 surface R _I1 that has been surface-activated by the particle beam irradiation scan, with high uniformity over the entire surface of the substrate 301 and high adhesion. Can be formed.

  By using silicon (silicon, Si) as the material for the sputter member, a silicon thin film can be formed with high adhesion on the surface of the substrate 301 that has been subjected to surface activation treatment by particle beam irradiation.

  A silicon thin film with high adhesion is formed on the substrates 301 and 302 subjected to the surface activation treatment, and the surfaces of both substrates are brought into contact with each other via the silicon thin film so that a bonding interface having high adhesion can be formed on a wide substrate surface. It can form uniformly with respect to an area | region.

  In addition, in each figure of FIG.3 and FIG.4, although the shielding member was plate shape, it is not restricted to this. For example, as shown in FIGS. 5A to 5C, the shielding member 602 may be configured as a triangular prism, or may be configured so that the cross-sectional shape of the side surface thereof is a triangle (602A). The triangular prism-shaped shielding member 602A has a first side surface as a shielding surface 611, a second side surface with a first sputter member 612A, and a third side surface with a second sputter member 612B. Has been.

As shown in FIG. 5A, when the particle beam irradiation scan is performed on the substrate 301, the line-type particle beam source 601 is set to a predetermined angle α ″ _I1, and the shielding surface 611 of the shielding member 602A is set to a predetermined angle. β ″ _I1 is set substantially toward the substrate 301, and the sputtered particles P scattered from the substrate 301 by the sputtering by the particle beam irradiation are blocked by the shielding surface 611.

The line-type particle beam source 601 and the shielding member 602A are scanned on the substrate 301 while being maintained at the rotation angles α ″ _I1 and β ″ _I1 . As a result, the beam irradiation region R _I1 is scanned over the substrate 301, and the beam irradiation can be performed uniformly over the entire surface of the substrate 301.

Next, when the sputtering material 612A is deposited on the substrate 301 as shown in FIG. 5B, the surface of the first sputtering member 612A can be seen from both the line beam irradiation source 601 and the substrate 301. The angle β ″ _S1 is set, and the line type beam irradiation source 601 is set to an angle α ″ _S1 that emits the particle beam B toward the sputtered material 612.

Then, the line-type particle beam source 601 and the shielding member 602A are scanned on the substrate 301 while being maintained at the rotation angles α ″ _S1 and β ″ _S1 . As a result, the beam irradiation region R _sA1 scans the substrate 301, and the sputter deposition F _A1 can be uniformly performed over the entire surface of the substrate 301.

Next, as shown in FIG. 5C, when the second sputter member 612B is deposited on the substrate 301, the shielding member 602A has the sputter material 612B faced from both the line beam irradiation source 601 and the substrate 301. The visible angle β ″ _p1 is set, and the line type beam irradiation source 601 is set to an angle α ″ _p1 that emits the particle beam B toward the sputtered material 612.

Then, the line-type particle beam source 601 and the shielding member 602A are scanned on the substrate 301 while being maintained at the rotation angles α ″ _p1 and β ″ _p1 . As a result, the beam irradiation region R _sB1 scans the substrate 301, and the sputter deposition F _A2 can be uniformly performed over the entire surface of the substrate 301.

In this case, the rotation angles α ″ _p1 and β ″ _p1 in FIG. 5C are the same as the rotation angles α ″ _s1 and β ″ _{s1 in} FIG. 5B, but may be different depending on the sputtering conditions.

  The same process as FIG. 5A to FIG. 5C is also performed on the other substrate 302, and then the surfaces of both the substrates are brought into contact with each other to uniformly form a bonding interface having a high adhesive force over a wide substrate surface region. be able to.

  As an example, silicon (silicon, Si) may be employed for the first sputter member, and a transition metal such as iron (Fe) may be employed for the second sputter member. Then, by performing the processes shown in FIGS. 5A to 5C in that order, surface activation processing is performed on the substrate 301 while minimizing adverse effects such as adhesion of sputtered particles to the substrate 302 (FIG. 5). 5A), a silicon thin film having a high adhesion force is formed on the surface-activated substrate 301 (FIG. 5B), and an appropriate amount of iron is doped to the silicon thin film in order to improve the bonding strength ( FIG. 5V) becomes possible.

  The transition metal is preferably deposited on the silicon thin film so as to contain 0.1 to 30 atomic% in the vicinity of the surface of the sputter deposited silicon thin film. Further, the transition metal is preferably deposited on the silicon thin film so as to contain 3 to 10 atomic% in the vicinity of the surface of the sputter deposited silicon thin film.

  As described above, when the content of the transition metal in the vicinity of the silicon thin film surface is smaller than the predetermined amount, the bonding strength at the bonding interface formed by the subsequent bonding may not be sufficiently increased.

  Further, if the content of the transition metal in the vicinity of the silicon thin film surface is larger than a predetermined amount, it may not be preferable in the surface treatment.

  In FIG. 5, the shielding member 602A has a triangular prism shape, but is not limited thereto. The shielding member 602A may more generally have a polygonal column shape. Using a shielding member having a plurality of surfaces such as a polygonal column, a sputtering material mounted on each surface can be deposited on the substrate surface by sputtering.

  In the case of a polygonal column shielding member, selection of an appropriate sputtering material is performed by rotating the shielding member on which the sputtering material is mounted. The shielding member may be configured to be rotated around a rotation axis in the longitudinal direction of the polygonal column.

  In order to make the sputtering performance uniform in the line direction (X direction), it is preferable to arrange the line-type particle beam source and the shielding member so that their rotation axes are substantially parallel to each other.

  By mounting the sputtering material on the shielding member, the surface treatment apparatus including the line-type particle beam source can be designed and made smaller, and the shielding and the sputtering treatment can be efficiently exchanged.

  In the examples of FIGS. 4 to 6, a plurality of types of sputter materials are arranged on each surface of a plate shape, a triangular prism, or a polygonal column, but the present invention is not limited to this. Any configuration may be employed as long as the sputter material is appropriately sputtered by the line beam source in accordance with each sputter deposition.

  4 to 5, the sputter material is mounted on the shielding member, but the present invention is not limited to this. The sputter material may be disposed between a member different from the shielding member, for example, a substrate supported by the sputter member.

  More preferably, as shown in FIGS. 6A and 6B, the apparatus is configured so that both the particle beam irradiation and the sputter deposition on the same substrate 301 can be performed in a single scan.

  The first line type particle beam source 601A irradiates the surface of the substrate 301 with a particle beam. The shielding plate (shielding member) 602 is configured to have a size, a position, and an angle so as to shield the sputtered particles scattered from the surface of the substrate 301 by the particle beam irradiation by the first line type particle beam source 601A. . The second line type particle beam source 601B and the sputter member 612 are a desired position or region on the substrate 301 by causing the particle beam emitted from the second line type particle beam source 601B to collide with the sputter member 612 and causing the member to sputter. It is comprised so that it may deposit on.

  FIG. 6A shows a mode in which the second-line particle beam source 601B emits the particle beam B from the front of the sputtering member 612 in the scanning direction in the direction opposite to the traveling direction. On the other hand, FIG. 6B shows a mode in which the second line type particle beam source 601B emits the particle beam B in the same direction as the traveling direction from behind the scanning direction of the sputtering member 612.

With these configurations, the particle beam irradiation region _{R I} of the first line-type particle beam source 601A, and a sputter deposition region _{R S} by the second line-type particle beam source 601B and the sputtering member 612, at the same time the same on the substrate 301 It is possible to scan in the direction (Y direction).

Sputter deposition region R _S is preferably scanned to follow the scanning of the particle beam irradiation region R _I. As a result, a sputter material 612 can be deposited on the surface of the substrate 301 immediately after surface activation by particle beam irradiation to form a thin film, or a predetermined dopant material can be doped. That is, after surface activation by beam irradiation, oxidation and contamination due to contact with impurities in the atmosphere, oxygen, water, and the like proceed with time on the surface of the substrate 301. Since the atmosphere cannot be completely cleaned, the deterioration of the surface activated surface property due to contact with the atmosphere proceeds in proportion to time. On the other hand, by adopting this configuration, the time from the surface activation process to the sputter deposition can be minimized. Thereby, it is possible to form a thin film and an interface between the thin film substrate having extremely high adhesive force and good characteristics.

  For example, by using silicon (silicon, Si) as the sputter material of the sputter member 612, a silicon thin film having extremely high adhesion and good characteristics can be formed on the substrate 301.

When scanning the particle beam irradiation region _RI and the sputter deposition region _RS at the same speed, the particle beam characteristics of each line type particle beam source, for example, the radiation amount of the particle beam, the kinetic energy, the particle type, and the sputter member The desired beam irradiation (surface activation treatment) and sputter deposition or doping can be realized by adjusting the distance between the substrate and the substrate.

  The scanning speed is not necessarily the same and may be different. However, if the subsequent scan is faster than the previous scan, it is necessary to leave a sufficient interval between the scans.

  In this way, by using the configuration illustrated in FIG. 6A and FIG. 6B, one line type particle beam source (first line type particle beam source 601A) is used to irradiate the substrate surface with the beam, A sputter material is sputtered using a line type particle beam source (second line type particle beam source 602B), and the sputter material is deposited or doped on the substrate surface irradiated with the beam by the first line type particle beam source. Can be made.

  Although the sputter member shown in FIGS. 6A and 6B is formed in a plate shape and the sputter material 612A is disposed on one surface thereof, the present invention is not limited to this.

  For example, like the shielding member 602 shown in FIG. 4, another sputter material may be arranged on the back surface of the plate-like sputter member shown in FIGS. 6A and 6B. Thereby, after the first scan, the sputter member 612 can be rotated to deposit the second sputtered material on the back surface on the substrate (not shown).

  Moreover, like the shielding member 602 shown by FIG. 5, it may be comprised by a triangular prism (polygonal prism), or it may be comprised so that the cross-sectional shape of the side surface may become a triangle (polygonal prism).

  In this case, silicon (silicon, Si) may be employed for the first sputter member, and a transition metal such as iron (Fe) may be employed for the second sputter member. 6A and 6B, a scan for performing sputter deposition on the first sputter member (Si) is performed after the scan for performing the particle beam irradiation or the surface activation process on the substrate shown in FIGS. 6A and 6B. After forming the thin film (Si thin film), the sputter member 612 is rotated, and the second line particle beam source 601B is operated to dope a predetermined amount of the second sputter member (Fe) in the vicinity of the surface of the first thin film. May be.

  Even when the second sputter member is deposited on the substrate, the particle beam irradiation by the first line type particle beam source 601A may be scanned in advance. By irradiating the surface of the first thin film with a particle beam, the surface can be activated or the crystal structure can be disturbed. Thereby, it becomes easy to dope the second sputter member. Further, the energy of the surface of the first thin film is increased, and the first thin film surfaces of both substrates thereafter are brought into contact with each other, so that a bonding interface having high bonding strength can be formed.

  In the above example, the second sputter material is used as a dopant for the first thin film, but the second thin film may be formed on the first thin film by increasing the sputter deposition amount of the second sputter material.

  Further, as described above, the sputter member 612 may be configured such that the outer shape is a polygonal prism shape such as a triangular prism, and a predetermined sputtering material is disposed on each sputtering surface. In this case, the sputter member 612 can be rotated by a predetermined angle to deposit a predetermined sputter material.

Incidentally, by providing a plurality of line-type particle beam source and a plurality of sputtering members, the upper substrate, following the scanning of the particle beam irradiation region R _I, may be sequentially scan multiple sputter deposition region Rs. Thereby, a multilayer film structure composed of a plurality of layers, a thin film structure including a plurality of dopants, or a thin film structure of a mixed form thereof can be formed on the substrate.

  The first and second line type particle beam sources 601A and 601B, the shielding plate 602, and the sputter member 612 all extend in the same direction (X direction). These may be configured to be rotatable around an axis parallel to the X direction. Using this configuration, beam irradiation can be performed on the surfaces of both substrates one by one. Thereby, it is not necessary to arrange a particle beam source for each substrate, and surface treatment can be performed on two substrates using one or a set of line type particle beam sources.

  In FIG. 6, the shielding member 602 and the sputtering member 612 are configured as separate members, but are not limited thereto. There may be a case where a member called the shielding member 602 is not particularly provided. For example, any structure may be used as long as it has both the effects of particle beam irradiation on the substrate by particle beam irradiation and shielding of the scattering of sputtered particles to the other substrate 302.

  Conventionally, when sputter deposition is performed on the substrate surface, the particles scattered by the sputtering fly or float in the atmosphere in the chamber and adhere to other substrates, chamber wall surfaces, and the like, thereby causing contamination. In the configuration having the sputter material or sputter member 612 according to the present invention, the sputter member 612 and the line type particle beam source 601 may be configured to shield the spatter of sputtered particles of the sputter material. In this way, not only the shielding member 602 but also the line-type particle beam source 601 can be configured to shield the scattering of sputtered particles of the sputtered material by appropriately setting one or both of the dimensions, postures, and arrangement positions. May be configured. Since the shielding member 602 and the line type particle beam source 601 are arranged between the opposing substrates and have the same line shape as the cross-sectional shape of the particle beam and the beam irradiation region, the shielding member 602 and the line type particle beam source 601 are scattered from the substrate surface or the sputtering material. It can be configured to shield the sputtered particles efficiently. As described above, according to the present invention, it is possible to efficiently perform the surface treatment by blocking the scattering of impurities such as sputtered particles, and it is possible to configure the apparatus for that purpose with a reduction in size or space.

  Although FIGS. 3 to 5 show the case where the same kind of surface treatment is performed on the two substrates, the present invention is not limited to this. The surface treatment for the substrate 301 and the surface treatment for the substrate 302 may be different processes. Further, the substrate 302 may not be subjected to any surface treatment.

  In the configurations shown in FIGS. 2 to 6, no surface treatment is performed on the other substrate 302 while one substrate 301 is surface-treated. However, the same or other surface treatment may be performed on the other substrate 302 simultaneously or before and after.

  4 to 6, silicon is used as the sputtering material and iron is used as the dopant material (doping material). However, the present invention is not limited to this.

As the sputtering material, various materials such as a semiconductor, an insulator, and a metal can be used. For example, in addition to silicon (Si), group IV semiconductors such as germanium (Ge), silicon germanium (SiGe), silicon carbide (SiC), and silicon carbide germanium (SiGeC), and group III-V such as GaAs, InP, and InGaAs Semiconductors, diamond (C may be employed. Insulators such as silicon oxide (SiO ₂ ) and silicon nitride (Si ₃ N ₄ ) may be employed. Gold (Au), silver (Ag), copper ( A metal or alloy such as Cu) or aluminum (Al) may be employed.

  The dopant material for the semiconductor substrate or semiconductor thin film is preferably a transition metal. It is preferable that a predetermined amount of iron is doped as a transition metal with respect to the silicon surface.

  Further, a plurality of materials may be stacked to form a multilayer film, or a plurality of types of doping or a combination thereof may be executed.

  Note that a computer 700 is arranged or connected to the substrate surface treatment apparatus or the substrate bonding apparatus shown in FIG. The computer 700 is connected to a member such as a surface treatment means, a shielding member, a member that supports a sputter material, each moving mechanism, a sensor, and a camera, receives information from these, calculates, and issues a command to each member. And is equipped with a program.

<2. Line-type particle beam source>
The line type particle beam source may have a single particle beam radiation port or a plurality of radiation ports. Further, the plurality of radiation openings may be configured to be operated and controlled individually for each radiation opening. The line type particle beam source described below can be employed as the line type particle beam source of the above-described substrate surface processing apparatus or substrate bonding apparatus.

  Conventional line-type particle beam sources have been configured with a single particle beam radiation port. As described above, by using the line type particle beam source, it is possible to uniformly irradiate the particle surface with respect to the substrate surface having a relatively large size. However, the length of the line type particle beam source in the line direction (longitudinal direction) is defined with respect to the size of the substrate surface to be processed. Therefore, when a single-line particle beam source is used to irradiate a particle beam to substrates of different sizes, the length of the line particle beam source used in the line direction is the largest among the target substrates. Is set according to the substrate size. Therefore, when a particle beam is irradiated onto a relatively small substrate using this line type particle beam source, a particle beam portion that does not hit the substrate is generated. When the particle beam collides with a portion other than the substrate, sputtered particles are scattered from an undesired member and mixed in the processing atmosphere. This undesired sputtered particles can cause contamination of the substrate surface to be processed and reduce process quality. In addition, it is uneconomical to generate a particle beam other than the particle beam necessary for the intended processing.

  Another object of the present invention is to provide a line type particle beam source that solves these problems.

  In order to solve the above-mentioned problems, a line-type particle beam source according to the present invention is configured to have a plurality of line-type or non-line-type particle beam sources (sub-particle beam sources) arranged linearly in the line direction. It has been done.

  This sub-particle beam source has an input line on a surface opposite to the radiation port or a surface parallel to the line direction. In the particle beam source shown in FIGS. 7 to 9, as the input line, an electric wire connected to the power source and a gas introduction pipe connected to the gas source are provided on the side opposite to the radiation port.

  FIG. 7 is a front view of a line-type particle beam source having a plurality of sub-particle beam sources according to the present invention as viewed from the direction perpendicular to the emission port direction. FIG. 8 is a top view of the line-type particle beam source shown in FIG. 7 as viewed from the radiation port side.

  As shown in FIGS. 7 and 8, a plurality of particle beam sources 601N are linearly arranged in the line direction (longitudinal direction) to constitute one line type particle beam source 601C.

  With this configuration, by operating a predetermined line type particle beam source 601N and not operating other line type particle beam sources 601N so as to correspond to the length suitable for each substrate size, A beam can be generated and emitted.

  For example, using the configuration shown in FIGS. 7 and 8, a substrate having a diameter of 4 inches, 8 inches, and 12 inches, or a size perpendicular to the line direction of the line type particle beam source 601C is 4 inches, 8 inches, and 12 inches. Particle beams corresponding to each of the inch substrates (hereinafter referred to as 4 inch, 8 inch and 12 inch wafers) can be generated. The sub-line type particle beam source 601N3 disposed at the center of the line type particle beam source 601C has a capability of irradiating the particle beam to a region having a length of 4 inches (about 10 cm) in the line direction. . Line type particle beam sources 601N2 and 601N4 arranged at both ends in the line direction of the line type particle beam source 601N3, and line type particle beam sources 601N1 arranged outside and in contact with the line type particle beam sources 601N2 and 601N4 Each of the 601N5 has an ability to irradiate a particle beam to a region having a length of 1 inch (about 5 cm) in the line direction. Further, these line type particle beam sources 601N1 to 601N5 have the ability to irradiate the particle beam with substantially the same characteristics per unit length, and can be operated individually.

  An operating system for controlling on / off of operating power supply and operating conditions may be individually connected to each line-type particle beam source 601N.

  As an example of individually operating, in FIG. 7, an operation command system I is connected to the central line type particle beam source 601N3. The operation command system II is connected to the line type particle beam sources 601N2 and 601N4 arranged at both ends of the line type particle beam source 601N3 in the line direction. Further, an operation command system III is connected to the line type particle beam sources 601N1 and 601N5 arranged on the outside thereof. These actuation command systems are preferably connected to the computer 700.

  For a 4-inch wafer, an operation command is given through the operation command system I and only the line type particle beam source 601N3 is operated, and no operation command is given from the operation command systems II and III, or a non-operation command is given. Therefore, the other line type particle beam sources 601N1, 601N2, 601N4 and 601N5 are not operated. Then, while irradiating the wafer with the particle beam, the wafer is passed through the line type particle beam source 601C so that the wafer passes almost the center of the line type particle beam source 601C under the irradiation region of the line type particle beam source 601N3. Is translated relative to.

  For an 8-inch wafer, an operation command is given through the operation command systems I and II to operate the line type particle beam sources 601N2, 601N3 and 601N4, and no operation command is given from the operation command system III, or a non-operation command is given. , The other line type particle beam sources 601N1 and 601N5 are not operated and the particle beam irradiation is performed. Similarly, with respect to a 12-inch wafer, an operation command is given through the operation command systems I to III, and all of the line type particle beam sources 601N1 to 601N5 are operated to perform particle beam irradiation.

  That is, by arranging a plurality of particle beam sources linearly in the line direction, it becomes possible to perform particle beam irradiation flexibly corresponding to various substrate sizes.

  The configuration such as the size and number of the sub-particle beam particle sources shown in FIGS. 7 and 8 should be understood as an example. For example, the radiation port may be formed in a line shape or a non-line shape.

  According to the configuration illustrated in FIG. 7, substrate surface processing is performed using a line type particle beam source linearly arranged in the line direction and having a plurality of particle beam sources, so as to correspond to the size of the substrate in the line direction. Several beam irradiation sources can be operated to perform beam irradiation on the substrate surface.

  Thereby, a particle beam having a length corresponding to the dimension of the substrate to be processed can be emitted. For example, it is possible to irradiate a small particle surface with a good particle beam by using a line type particle beam source capable of accommodating a large substrate surface. Thereby, for example, when irradiation of a portion other than the substrate surface region to be surface-treated is prevented from irradiating unnecessary substances into the atmosphere, a clean treatment atmosphere can be maintained, and the joining surfaces are joined. In addition, a bonding interface having a high bonding strength can be formed. Furthermore, the operation of the particle beam source can be saved.

  In order to arrange a plurality of particle beam sources in a line so as to correspond to various substrate sizes, the size of each line type particle beam source, particularly the size or shape in the line direction, is an important factor.

  However, since the conventional line type particle beam source is configured by providing an electric wire, a gas take-out or a cooling water conduit on the end face in the line direction, it is physically difficult to arrange them in the line direction.

  Therefore, in the fast atom beam source, as shown in FIGS. 7 and 8, each particle beam source is configured such that the end surface in the line direction is terminated with a flat surface perpendicular to the line direction. (For example, see both end surfaces 621N2 and 622N2 of 601N2 shown in FIG. 7).

  For example, as shown in FIG. 9, the gas and electric wiring to the sub-particle beam source 601N can be provided so as not to protrude outward in the line direction from the end face in the line direction. In FIG. 9, the cooling plate 624 is attached in close contact with the surface on the opposite side of the radiation port 623 and has a cooling pipe 625 for circulating cooling water, and is emitted from each line type particle beam source 601N during operation. It is configured to absorb heat. Therefore, as shown in FIG. 9, in the case of FAB, the electric wire 628 for supplying power from the cathode power source 627 to the cathode 626 and the gas introduction pipe 629 for introducing gas into the line type particle beam source 601N are provided on this cooling plate. 624 is provided to pass through. The cooling pipe 625 to the cooling plate 624 is also arranged so as to extend in the direction of the surface on the opposite side of the radiation port 623 rather than being arranged extending in the line direction.

  The member constituting the radiation port 623 of the particle beam source 601N in FIG. 9 or a member in the vicinity thereof is preferably formed of conductive carbon. A member constituting the radiation port 623 of the particle beam source 601N in FIG. 9 or a member in the vicinity thereof may be formed as a grid.

  Further, the particle beam source 601 may have a configuration of an ion beam source 601D as shown in FIG. The particle beam source 601 </ b> D includes a magnet 651, and thereby forms a magnetic field at the particle beam radiation port 653 opened in the cone-shaped anode 652. The particle beam source 601D has a grid 654 as a cathode (neutrizer) having electrons.

  The grid 654 is preferably formed of conductive carbon.

  Some of the electrons emitted from the grid 654 are trapped in the magnetic field. Thereby, the gas (inert gas, for example, argon) introduced into the magnetic field from the gas introduction pipe 655 is turned into plasma. The gas cations are accelerated from the radiation port 653 to the outside of the particle beam source 601D in an electric field generated by a voltage applied to the anode 652. The electrons emitted from the grid 654 also fly in the same direction as the particle beam, thereby having the effect of neutralizing the charge on the particle beam or the bonding surface of the substrate on which the particle beam collides.

  The structure of the particle beam source shown in FIGS. 9 and 10 is merely an example, and can be used as each sub particle beam source used in the line-type particle beam source 601C including a plurality of sub particle beam sources. It is not limited to this. The particle beam source shown in FIGS. 9 and 10 can be used as a single line type particle beam source 601.

  As mentioned above, although several embodiment and the Example of this invention were described, these embodiment and an Example demonstrate this invention exemplarily. The scope of the claims encompasses many modifications to the embodiments without departing from the technical idea of the present invention. Accordingly, the embodiments and examples disclosed herein are presented for purposes of illustration and should not be considered as limiting the scope of the present invention. In addition, the aspects described in each embodiment can be applied to other embodiments as long as there is no contradiction between the embodiments.

DESCRIPTION OF SYMBOLS 100 Joining apparatus 200 Vacuum chamber 201 Vacuum pump 301, 302 Substrate 400 Substrate support means 401, 402 Stage 403 First stage moving mechanism 404 Second stage moving mechanism 405 XY direction translation moving mechanism 406 Z direction raising / lowering moving mechanism 407 Rotation around Z axis Moving mechanism 410 Bonding pressure adjusting mechanism 420 Substrate heating means 421, 422 Heater 500 Position measuring means 501, 502 Camera 503 Window 504, 505 Mirror 600 Surface treatment means 601 Line type particle beam source 602 Shielding member 603 Beam source moving mechanism 604 Linear guide 605, 606 Rotating linear guides 607, 608 Rotating gears 609, 610 Rotating shaft 612 Sputter member 602A Polygonal column type shielding member 700 Computer

Claims (22)

Irradiating the surface of one substrate with a line particle beam source disposed between two opposing substrates;
During the beam irradiation, a substance released from the one substrate adheres to the other substrate by using a shielding member that is arranged between the two opposing substrates and translates simultaneously with the line type particle beam source. To prevent and
A substrate surface treatment method comprising:   The substrate surface treatment method according to claim 1, further comprising depositing the sputtered material on the surface of the substrate on which the beam irradiation has been performed by sputtering the sputtered material using the line type particle beam source. The shielding member has at least one surface on which a sputter material can be mounted,
The substrate surface treatment method according to claim 2, wherein the shielding member is rotated about an axis substantially parallel to a line direction of the line-type particle beam source to sputter the sputtering material mounted on each surface. The shielding member is plate-shaped, and one surface can be used as a shielding surface, and the other surface is loaded with a sputter material,
The substrate according to claim 3, further comprising rotating the shielding member according to whether the substrate to be processed and the surface treatment performed on the substrate to be processed are beam irradiation or sputter deposition. Surface treatment method. Using a shielding member in which silicon (Si) is mounted on one surface of the at least one surface as a sputtering material and a transition metal is mounted on the other surface,
Depositing silicon (Si) on the surface of the substrate subjected to beam irradiation;
Depositing a predetermined amount of transition metal on the deposited silicon (Si);
The substrate surface treatment method according to claim 3 or 4.   The substrate surface treatment method according to claim 1, wherein the line-type particle beam source has a grid containing conductive carbon. The line type particle beam source has a first line type particle beam source and a second line type particle beam source,
Using the first line type particle beam source, beam irradiation is performed on the substrate surface,
Sputtering material is sputtered using a second line type particle beam source, and the sputtered material is deposited on the substrate surface irradiated with the beam by the first line type particle beam source.
The substrate surface treatment method according to any one of claims 2 to 6. The line-type particle beam source that is rotatable about an axis substantially parallel to the line direction is irradiated between the two opposing substrates while irradiating the surfaces of both substrates one by one. The substrate surface treatment method according to any one of 1 to 7. Irradiating the surface of one substrate with a line particle beam source disposed between two opposing substrates;
During the beam irradiation, a sputtered material which is disposed between the two opposing substrates and translates simultaneously with the line type particle beam source is sputtered, and the sputtered material is applied onto the surface of the substrate on which the beam irradiation has been performed. Depositing
A substrate surface treatment method comprising: The substrate surface processing method according to claim 9, wherein the line type particle beam source has a grid containing conductive carbon. The line type particle beam source has a first line type particle beam source and a second line type particle beam source,
Using the first line type particle beam source, beam irradiation is performed on the substrate surface,
Sputtering material is sputtered using a second line type particle beam source, and the sputtered material is deposited on the substrate surface irradiated with the beam by the first line type particle beam source.
The substrate surface treatment method according to claim 9 or 10. The line-type particle beam source that is rotatable about an axis substantially parallel to the line direction is irradiated between the two opposing substrates while irradiating the surfaces of both substrates one by one. The substrate surface treatment method according to any one of 9 to 11. A line-type particle beam source disposed between two opposing substrates and selectively irradiating the surface of one substrate;
A shielding member that is disposed between the two opposing substrates and shields a material scattered from the substrate receiving the beam irradiation toward another substrate;
With
The line type particle beam source and the shielding member can be simultaneously translated between the two opposing substrates . The substrate surface treatment apparatus further includes a sputtering member disposed between the two opposing substrates,
The line-type particle beam source is configured to selectively perform beam irradiation on the substrate and the sputter member,
The sputter member is configured to receive a beam irradiation from a line type particle beam source and to sputter the sputter material toward the substrate surface.
The substrate surface treatment apparatus according to claim 13 . The shielding member has a rotation axis substantially parallel to a line direction of the linear particle beam source, and has at least one surface parallel to the rotation axis, and the at least one surface is the beam irradiation The substrate surface processing apparatus according to claim 13 , further comprising: a shielding surface that shields a substance that scatters from a receiving substrate toward another substrate; and a sputtering surface on which a sputtering material can be mounted. The substrate surface treatment apparatus further includes a sputter material disposed between the two opposing substrates,
The line type particle beam source has a first line type particle beam source and a second line type particle beam source,
The first line particle beam source irradiates the substrate surface with a beam,
The second line type particle beam source irradiates the sputter material with a beam,
The sputter material is configured to sputter the sputter material toward the substrate surface by beam irradiation by a second line type particle beam source.
The substrate surface treatment apparatus according to claim 13 . It said line-type particle beam source has a grid including a conductive carbon, the substrate surface treating apparatus according to any one of claims 13 to 16. Substrate bonding device comprising a substrate surface treating apparatus according to any one of claims 13 17. A line-type particle beam source disposed between two opposing substrates and selectively irradiating the surface of one substrate;
A sputter member disposed between the two opposing substrates and configured to sputter a sputtered material toward the substrate surface;
With
The substrate surface processing apparatus, wherein the line type particle beam source and the sputtering member can be translated simultaneously between the two opposing substrates. The line type particle beam source has a first line type particle beam source and a second line type particle beam source,
The first line particle beam source irradiates the substrate surface with a beam,
The second line type particle beam source irradiates the sputter material with a beam,
The sputter material is configured to sputter the sputter material toward the substrate surface by beam irradiation by a second line type particle beam source.
The substrate surface treatment apparatus according to claim 19. 21. The substrate surface processing apparatus according to claim 19, wherein the line type particle beam source has a grid containing conductive carbon. A substrate bonding apparatus comprising the substrate surface treatment apparatus according to any one of claims 19 to 21.

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