JP6144236B2 - Substrate processing method, storage medium, and substrate processing apparatus - Google Patents

Description

  The present invention relates to a technique for drying a substrate by supplying a drying accelerating gas to a plurality of substrates such as a plurality of semiconductor wafers arranged in a horizontal direction at intervals in a standing posture.

  In a semiconductor device manufacturing process, a semiconductor wafer (wafer) is processed with a processing solution such as a predetermined chemical solution or pure water, and a cleaning process is performed to remove contamination such as particles, organic contaminants, and metal impurities from the wafer. .

  In such a cleaning process, when it is particularly important to increase the throughput, a batch type processing apparatus that processes a plurality of wafers at once is used. The plurality of wafers are processed in one or a plurality of processing tanks and then loaded into a final rinsing processing tank where final rinsing processing is performed. Thereafter, the plurality of wafers are carried into a drying chamber directly above the final rinsing processing tank, where drying processing is performed (see, for example, Patent Document 1). In the processing in the plurality of processing tanks, the final rinsing processing tank and the drying chamber described above, the plurality of wafers are subjected to processing in a standing posture and arranged in a row at intervals in the horizontal direction, and the first The wafer array state is maintained from the process to the last process.

  A FOUP (Front Opening Unified Pot) which is a transfer container for wafers W generally used in recent years accommodates 25 wafers at a pitch of 10 mm (in the case of a 12-inch wafer). In the batch cleaning process, in order to further increase the throughput, 50 wafers accommodated in two hoops are collectively processed as one processing lot. In this case, 25 wafers taken out from the other hoop are inserted between 25 wafers taken out from one hoop, whereby 50 wafers have a 5 mm pitch (half-half of the hoop accommodation pitch). Pitch). The above-described processing is performed in a state where the wafer arranged in a half pitch is held by the wafer guide (see, for example, Patent Document 2).

  When batch-type liquid processing as described above is performed, the purpose is to prevent contaminants peeled off from the wafer back surface (surface where devices are not formed) from adhering to the wafer surface (surface where devices are formed). Therefore, the wafers are arranged with the front surfaces and the back surfaces facing each other (see, for example, Patent Document 3). When the wafers are arranged according to such a rule, the first arrangement pattern in which the outward surfaces of the wafers at both ends are the wafer back surface, and the second arrangement pattern in which the outward surfaces of the wafers at both ends are the wafer surface There is a demand to use these two arrangement patterns properly.

  When performing the drying process, a drying acceleration gas such as IPA (isopropyl alcohol) vapor is supplied toward the wafer. At this time, if the IPA vapor strikes the wafer surface, which is the device formation surface, vigorously, the particle level on the wafer surface deteriorates. Therefore, the IPA nozzle is provided with a plurality of ejection openings arranged in the wafer arrangement direction at an arrangement pitch that is twice the wafer arrangement pitch, and each ejection opening is arranged at a position corresponding to the back surface of the wafer.

  If the positional relationship between the discharge port of the IPA nozzle and the wafer W held on the wafer guide is the same when the first array pattern is employed and when the second array pattern is employed, Some of the IPA vapor sprayed from the outlet may directly collide with the wafer surface.

Japanese Patent Laid-Open No. 10-284459 JP 2012-015490 A JP-A-6-163500

  An object of the present invention is to provide a technique capable of positioning the discharge port of the drying accelerating gas at a position corresponding to the gap between the back surfaces of the substrates regardless of the change in the arrangement pattern of the substrates.

According to a preferred embodiment of the present invention, in the substrate processing method for performing a drying process on a plurality of substrates, the selection for selecting one of the first array pattern and the second array pattern as the array pattern of the substrates is performed. In accordance with the step and the arrangement pattern selected in the selection step, the plurality of substrates are arranged in a horizontal direction with a gap between adjacent substrates in a standing posture at a predetermined arrangement pitch. An array process for forming either the first substrate array in which the substrates are arrayed in the array pattern or the second substrate array in which the substrates are arrayed in the second array pattern, and maintaining the substrate array formed in the array process The holding step of holding the plurality of substrates together by the substrate holder, and the arrangement pitch that is twice the arrangement pitch of the substrates in a state where the substrate is held by the substrate holder. A drying accelerating gas supply step of discharging a drying accelerating gas from at least one nozzle having a plurality of discharge ports arranged in a horizontal direction and bringing the substrate into contact with the discharged drying accelerating gas, In the substrate arrangement, the surface of the odd-numbered substrate from one end of the first substrate arrangement faces the first direction and the back surface faces the second direction opposite to the first direction, and is even-numbered from the one end. The front surface of the substrate faces the second direction and the back surface faces the first direction, and the surface of the substrate at the other end of the first substrate array faces the second direction and the back surface faces the first direction. In the second substrate arrangement, the surface of the odd-numbered substrate from one end of the second substrate arrangement faces the second direction and the back surface faces the first direction, and the even number from the one end. The surface of the second board is the front The substrate is directed to the first direction and the back surface is directed to the second direction, and the surface of the substrate at the other end of the second substrate array is directed to the first direction and the back surface is directed to the second direction. In the processing method, the drying accelerating gas is supplied when the drying accelerating gas supply step is executed by adjusting according to the first arrangement pattern or the second arrangement pattern selected in the selection step. There is provided a substrate processing method, further comprising an adjusting step in which the discharge port of the nozzle that is discharging is positioned at a position corresponding to a gap between the back surfaces of the substrate.
According to another preferred embodiment of the present invention, there is provided a storage medium for storing a program that can be executed by a control device comprising a computer that controls the operation of the substrate processing apparatus, wherein the program is executed by the computer. Then, a storage medium is provided in which the control device causes the substrate processing apparatus to execute the substrate processing method.

According to still another preferred embodiment of the present invention, there is provided a batch type substrate processing apparatus, wherein a plurality of substrates are formed in a standing posture at a predetermined arrangement pitch, and a gap is formed between adjacent substrates. A substrate arranging device arranged in a horizontal direction in a state in which the substrate is arranged, a drying processing unit that performs a predetermined drying process collectively on the plurality of substrates while maintaining the arrangement state of the substrates arranged by the substrate arranging unit, A substrate holding member capable of holding a substrate while maintaining the substrate arrangement state arranged by the substrate arrangement unit, and the plurality of substrates between the substrate arrangement apparatus and the drying processing unit A substrate transport apparatus that collectively transports the substrate processing apparatus, and a control unit that controls the operation of the substrate processing apparatus, wherein the substrate array apparatus includes at least a first substrate array in which substrates are arrayed in a first array pattern; Second distribution A second substrate arrangement in which substrates are arranged in a pattern, wherein the surface of the odd-numbered substrate from the one end of the first substrate arrangement faces the first direction and the back surface. Facing the second direction opposite to the first direction, the surface of the even-numbered substrate from the one end facing the second direction and the back surface facing the first direction, and the first substrate array The surface of the substrate at the other end faces the second direction and the back surface faces the first direction. In the second substrate arrangement, the surface of the odd-numbered substrate from one end of the second substrate arrangement is The second substrate array is directed to the second direction and the back surface is directed to the first direction, the surface of the even-numbered substrate from the one end is directed to the first direction and the back surface is directed to the second direction. The surface of the substrate at the other end of the first side is the first side And the back surface faces the second direction, and the drying processing unit maintains the arrangement state of the drying chamber and the substrates arranged by the substrate arranging device in the drying chamber. A substrate holder for collectively holding substrates, wherein the plurality of substrates can be transferred together with the substrate transfer device while maintaining the arrangement state of the substrates arranged by the substrate arrangement unit. A plurality of discharge ports arranged in a horizontal direction at an arrangement pitch that is twice the arrangement pitch of the substrates by the substrate arrangement device, and discharges a drying accelerating gas into the drying chamber from each discharge port At least one nozzle, and the substrate processing apparatus further includes a substrate held by the substrate holder and a discharge port of the nozzle that discharges the drying accelerating gas. And adjusting means for adjusting a relative positional relationship with respect to the arrangement direction of the substrates, wherein the control unit determines whether the substrates held by the substrate holder are arranged in the first arrangement pattern. The adjustment means is controlled in accordance with whether the drying promoting gas is discharged from the nozzle, and the discharge port that discharges the drying promoting gas is a gap between the back surfaces of the substrate. The substrate processing apparatus is provided so as to be located at a position corresponding to.

  According to the above-described embodiment of the present invention, the nozzles are disposed at positions corresponding to the gaps between the back surfaces of the substrates regardless of whether the substrates are arranged in the first arrangement pattern or the second arrangement pattern. Since the outlet can be positioned, in any case, the first arrangement pattern and the dry processing fluid discharged from the discharge port without causing a drop in particle level caused by directly colliding with the surface of the substrate. Any of the second array patterns can be used.

It is a perspective view which shows the batch-type washing | cleaning processing apparatus which concerns on one Embodiment of the substrate processing apparatus of this invention. It is a top view of the washing | cleaning processing apparatus shown in FIG. It is the schematic explaining the structure and effect | action of a wafer arrangement | sequence mechanism. It is the schematic explaining the structure and effect | action of a wafer arrangement | sequence mechanism. It is a perspective view which shows the washing | cleaning drying unit contained in the said washing | cleaning processing apparatus. It is a longitudinal cross-sectional view which shows the structure of the washing | cleaning drying unit shown in FIG. It is a schematic sectional drawing which shows a mode that a wafer is carried in to the washing-drying unit. It is a perspective view of a wafer guide. It is a schematic front view which shows the positional relationship of a dry gas nozzle, the holding rod of a wafer guide, and a wafer. It is a schematic side view for demonstrating the positional relationship of the discharge port of a dry gas nozzle, the holding rod of a wafer guide, and a wafer. It is a schematic side view for demonstrating the positional relationship of the discharge port of a dry gas nozzle, the holding rod of a wafer guide, and a wafer. It is a schematic side view for demonstrating the positional relationship of the discharge port of a dry gas nozzle, the holding rod of a wafer guide, and a wafer. It is a schematic side view which shows embodiment provided with two types of dry gas nozzles.

  Embodiments of the present invention will be described below with reference to the accompanying drawings.

  As shown in FIGS. 1 and 2, the batch-type cleaning processing apparatus 1 according to an embodiment of the substrate processing apparatus of the present invention mainly carries in / out and temporarily stores a FOUP F that is a wafer container. A hoop loading / unloading section 2 provided for the purpose, a cleaning processing section 4 for performing a cleaning process using a predetermined chemical solution on the wafer W and a drying process after the cleaning process, and the loading / unloading section 2 and the cleaning processing section 4 And an interface unit 3 for transporting the wafer W. In the FOUP F, a plurality of (for example, 25) wafers W are stored in a horizontal posture at a predetermined interval in the vertical direction. In the following description, the description will be made on the assumption that 25 wafers W are stored in one FOUP F. That is, the total number of wafers accommodated in the two hoops F is 50, and 50 wafers W constitute one processing lot.

  The FOUP loading / unloading unit 2 includes a FOUP loading / unloading stage 5 for placing the FOUP F, a FOUP stock unit 6 for storing the FOUP F, and a FOUP conveying device 12 for conveying the FOUP. One side surface of the FOUP F is a loading / unloading port for the wafer W, and a lid can be attached to and detached from the loading / unloading port.

  The hoop stock unit 6 includes a plurality of (for example, four) hoop holding members 13 that can hold the hoop F and are arranged in multiple stages in the vertical direction. The FOUP stock unit 6 temporarily stores the FOUP F in which the wafer W before the cleaning process is stored, and temporarily stores the FOUP F in which the inside from which the wafer W is taken out becomes empty.

  The hoop stock part 6 and the interface part 3 are partitioned by a partition wall 16. Two windows 16a are formed on the partition wall 16 in two upper and lower stages (only one is visible in FIG. 2). Two wafer loading / unloading stages 15 are provided adjacent to these windows 16a on the side of the hoop stock 6 (only one is visible in FIG. 2). The FOUP F can be placed on the wafer loading / unloading stage 15 so that the lid of the FOUP F faces the corresponding window 16a. The upper wafer loading / unloading stage 15 is for wafer loading, and the lower wafer loading / unloading stage 15 is for wafer loading.

  Each wafer loading / unloading stage 15 is provided with a lid opening / closing mechanism 17 for opening / closing the lid of the FOUP F mounted thereon.

  The hoop conveyance device 12 is composed of an articulated conveyance robot, and supports the hoop F by the support arm 12a at the tip thereof to convey the hoop F. The hoop conveyance device 12 is also movable in the A direction (horizontal direction) and the height direction in FIG. 2, and can convey the hoop F between the hoop carry-in / out stage 5, the holding member 13 and the wafer take-in / out stage 15. it can.

  In the interface unit 3, a wafer inspection device 18 for inspecting the storage state (the number of sheets, the presence / absence of jump slots, etc.) of the wafer W in the FOUP F is disposed in the vicinity of each window 16a.

  The interface unit 3 is provided with a wafer transfer device 19 for transferring a wafer and a wafer carry-in / out unit 20.

  The wafer transfer device 19 transfers the wafer W between the FOUP F on the wafer loading / unloading stage 15 and the arrangement unit 21. The wafer transfer device 19 is composed of a multi-axis arm robot, and has a wafer holding arm 19a at its tip. The wafer holding arm 19a has a plurality of holding claws (not shown) that can hold 25 wafers W. In a state where the wafer W is held by the holding claws, the wafer holding arm 19a can take an arbitrary position and posture in the three-dimensional space.

  The wafer carry-in / out unit 20 is provided to carry out the wafer W from the interface unit 3 to the cleaning processing unit 4 and to carry in the wafer W from the cleaning processing unit 4 to the interface unit 3. The wafer carry-in / out unit 20 includes a load position 20a and an unload position 20b, and an arrangement unit 21.

  The array unit 21 includes a first array mechanism 21a provided at the load position 20a and a second array mechanism 21b provided at the unload position 20b. The first arrangement mechanism 21a applies 50 wafers W before the cleaning process supplied from the wafer transfer device 19 to a half pitch (half pitch) of the arrangement pitch (normal pitch, for example, 10 mm) of the wafers W in the FOUP F. For example, 5 mm). The second arrangement mechanism 21b returns the wafer W after the cleaning process arranged at the half pitch to the normal pitch.

  Both the first arrangement mechanism 21a and the second arrangement mechanism 21b have the same structure. As shown in FIG. 3, each arrangement mechanism 21a, 21b has a guide 210 extending in the vertical direction, a wafer hand 211 that can be moved up and down along the guide 210, and a wafer holder 212 fixed to the guide. The wafer hand 211 is configured to hold 50 wafers at a half pitch. The wafer holder 212 can hold 25 wafers W at a normal pitch, and is configured so that the wafer hand 211 can pass in the vertical direction.

  The cleaning processing apparatus 1 further includes a wafer transfer device 22 that transfers the wafer W between the interface unit 3 and the cleaning processing unit 4. The wafer transfer device 22 has three chuck rods 22a, and 50 wafer holding grooves are formed in each chuck rod 22a at a half pitch. Therefore, the wafer transfer device 22 can hold the 50 wafers W in a standing posture (a posture where the surface of the wafer is along the vertical direction) arranged in a horizontal direction at a half pitch. The wafer transfer device 22 is movable in a direction indicated by an arrow B in FIG. 2 along a guide rail 23 extending horizontally from the interface unit 3 to the cleaning processing unit 4.

  The cleaning processing unit 4 includes a cleaning processing unit 7 and a drying unit 8 arranged in order from the side close to the interface unit 3. The wafer transfer device 22 moves along a guide rail 23 extending in the direction of arrow B (horizontal direction), and transfers the wafer W between the cleaning processing unit 7 and the drying unit 8.

  As shown in FIG. 2, the cleaning unit 7 includes a first chemical tank 31, a first water tank 32, a second chemical tank 33, and a second water tank 34 in order from the side far from the interface unit 3. The 3rd chemical | medical solution tank 35 and the 3rd washing tank 36 are arrange | positioned. The cleaning unit 7 further includes a first transfer device 37 for transferring the wafer W between the first chemical bath 31 and the first water washing bath 32, a second chemical bath 33, and a second chemical bath 33. A second transfer device 38 for transferring the wafer W between the water washing tanks 34 and a third transfer device 39 for transferring the wafers W between the third chemical solution tank 35 and the third water washing tank 36. And are provided.

  The first to third transfer devices 37, 38, and 39 (having wafer guides) have the same configuration, and each of them has 50 wafers W in a standing posture at a half pitch in the horizontal direction. Substrate holders 37a, 38a, 39a (also called wafer guides, wafer boats, etc.) (shown schematically in FIG. 2) and substrate holders 37a, 38a, 39a that can be held in an array It has a drive part (37b, 38b, 39b) that can be moved in the horizontal and vertical directions.

Different kinds of chemical solutions are stored in the first chemical solution tank 31, the second chemical solution tank 33, and the third chemical solution tank 35. Chemical solutions include SPM liquid heated to around 130 ° C. for removing organic dirt and surface metal impurities, and SC-1 liquid for removing deposits such as particles (ammonia, hydrogen peroxide and water). Etching of a mixed solution), an etching solution for etching an oxide film formed on the surface of the wafer W, for example, dilute hydrofluoric acid or a mixture of hydrofluoric acid and ammonium fluoride (buffered hydrofluoric acid (BHF)), silicon nitride film phosphoric acid aqueous solution heated to about 160 to 180 ° C. for performing _(H 3 PO ₄ aq) and the like, are conceivable variety.

  The first, second, and third water rinsing tanks 32, 34, and 36 are for removing the chemical solution adhering to the wafer W by the liquid processing by the first, second, and third chemical liquid tanks 31, 33, and 35, respectively. For example, various water washing techniques such as overflow rinse and quick dump rinse are used.

  The drying unit 8 is provided with a washing tank 24 and a chuck cleaning mechanism 26 for cleaning the chuck rod 22a of the wafer transfer device 22. A drying chamber (not shown in FIG. 2) for drying the wafer W using a drying acceleration gas such as isopropyl alcohol (IPA) vapor is provided at the upper portion of the water washing tank 24. The drying unit 8 is further provided with a transfer device 25 for transferring the wafer W between the washing tank 24 and the drying chamber. The transfer device 25 has the same configuration as the first transfer device 37 described above except that it does not have a mechanism for movement in the direction of arrow B in FIG. Thus, the wafer W can be delivered.

  As schematically shown in FIG. 1, a control unit 40 is provided in the housing of the hoop carry-in / out unit 2. The control unit 40 stores a controller 41 having a microprocessor (MPU) that controls various mechanisms, units, devices, and the like constituting the cleaning processing apparatus 1, a user interface 42, and information necessary for processing. And a storage unit 43.

  The user interface 42 and the storage unit 43 are connected to the controller 41. The user interface 42 includes a keyboard on which an operator inputs commands to manage each component of the cleaning processing apparatus 1, and a display that visualizes and displays the operating status of each component of the cleaning processing apparatus 1. Yes. The storage unit 43 executes a predetermined process on each component of the cleaning processing apparatus 1 in accordance with a control program for realizing various processes executed by the cleaning processing apparatus 2 under the control of the controller 41 and processing conditions. A control program, i.e., a recipe is stored. Control programs such as recipes are stored in a storage medium in the storage unit 43. The storage medium may be a fixed medium such as a hard disk or a portable medium such as a CDROM, DVD, or flash memory.

  Next, the operation of the cleaning processing apparatus 1 will be described. Two FOUPs F (first and second FOUPs) each storing 25 wafers W in a horizontal posture at a normal pitch are placed on the FOUP loading / unloading stage 5 by an external transfer machine. The first FOUP F on the FOUP loading / unloading stage 5 is transferred to the loading / unloading stage 15 by the FOUP transfer device 12. The hoop F storing the wafer W stored in the hoop storage unit 13 may be transferred to the wafer loading / unloading stage 15. The lid body is removed from the hoop F on the wafer loading / unloading stage 15 by the lid opening / closing mechanism 17 and the wafer inspection apparatus 18 inspects the wafer W storage state (number of sheets, jump slot, etc.).

  Thereafter, the wafer holding arm 19a of the wafer transfer device 19 is inserted into the FOUP F placed on the wafer loading / unloading stage 15, and 25 horizontal wafers W are taken out from the FOUP F. Next, the taken-out wafer W is converted into a standing posture and transferred to the wafer hand 211 of the first arrangement mechanism 21a. At this time, the wafer hand 211 is positioned below the wafer holder 212.

  Similarly, from the next FOUP F, the wafer transfer device 19 takes out 25 wafers W and delivers the wafers to the wafer holder 212. Next, the wafer hand 211 is raised and passed through the wafer holder 212. During this passage, the wafer W on the wafer holder 212 is inserted between the wafers W on the wafer hand 211 and transferred to the wafer hand 211. As a result, the wafer hand 211 holds 50 wafers W at a half pitch. Next, the wafer W is lowered by lowering the wafer hand 211 in a state where the wafer transfer device 22 is positioned at the load position 20a directly below the wafer hand 211 holding 50 wafers W at a half pitch, so that the wafer W is moved to the wafer hand 211. To the wafer transfer device 22.

  The lid opening / closing mechanism 17 attaches the lid to the FOUP F from which the wafer W has been taken out. The empty hoop F is transported to the hoop storage unit 13 by the hoop transport device 12 and stored there.

  The wafer transfer device 22 transfers 50 wafers W at a time to the cleaning processing unit 4. The wafer transfer device 22 first transfers the wafer W to the first transfer device 37 located on the first chemical tank 31 of the liquid processing unit 7. The first transfer device 37 is lowered, and after the wafer W is immersed in the first chemical bath 31 for a predetermined time, it is raised to pull the wafer W from the first chemical bath 31 and above the first washing bath 32. The wafer W is moved horizontally, descends, and the wafer W is immersed in the first washing tank 32 for a predetermined time, then rises and is lifted from the first washing tank 32, and then the wafer W is transferred to the wafer transfer device 22. Next, the wafer transfer device 22 transfers the wafer W to the second transfer device 38. The second transfer device 38 immerses the wafer W in the second chemical solution tank 33, then immerses it in the second water washing tank 34, and then returns it to the wafer transfer device 22. Next, the wafer transfer device 22 transfers the wafer W to the third transfer device 39. The third transfer device 39 immerses the wafer W in the third chemical solution tank 35, then immerses it in the third water rinsing tank 36, and then returns it to the wafer transfer device 22.

  For the wafer W, a set of a first chemical bath 31 and a first water washing bath 32, a set of a second chemical bath 33 and a second water washing bath 34, a third chemical bath 35 and a third water washing bath It is not necessary to perform liquid treatment in all of the 36 groups, and liquid treatment can be performed in any one or more selected groups. In addition, the number of sets of a chemical | medical solution tank and a washing tank is not limited to 3 sets, 4 sets or more may be sufficient and 2 sets or less may be sufficient.

  The wafer transfer device 22 passes the wafer W that has been subjected to the liquid processing in the liquid processing unit 7 to the transfer device 25 of the drying unit 8. The transfer device 25 immerses the wafer W in the water rinsing tank 24, rinses it with water, then pulls it up from the water rinsing tank 24 and carries it into a drying chamber (not shown) located directly above the water rinsing tank 24. A drying process using IPA vapor is performed in the drying chamber.

  Thereafter, the wafer transfer device 22 receives the wafer W from the transfer device 25 and transfers it to the unload position 20 b of the interface unit 3. The wafer hand 211 of the second arrangement mechanism 21 b receives the wafer from the wafer transfer device 22. In the process of lowering the wafer hand 211, half (25) of the wafers W held by the wafer hand 211 are transferred to the wafer holder 212. As a result, the wafer hand 211 and the wafer holder 212 each hold 25 wafers at a normal pitch.

  An empty FOUP F is placed on the wafer loading / unloading stage 15 for unloading by the FOUP transfer device 12, and the lid opening / closing mechanism 17 opens the lid of the FOUP F. Next, the wafer transfer device 19 takes out the wafer W from the wafer hand 211 and stores the wafer W in a horizontal posture in the FOUP F on the wafer loading / unloading stage 15 for unloading. Thereafter, the wafer inspection apparatus 18 inspects the storage state of the wafer W in the FOUP F. After the inspection is completed, the lid body opening / closing mechanism 17 closes the lid body of the FOUP F. The FOUP F containing the cleaned wafer W is transferred to the FOUP holding member 13 by the FOUP transfer device 12 and held there.

  The same operation as described above is performed on the wafer W on the wafer holder 212. That is, the wafer transfer device 19 stores the wafer W on the wafer holder 212 in an empty FOUP F, and the FOUP F is transported to the FOUP holding member 13 by the FOUP transport device 12. Thus, a series of procedures for the wafer W of one processing lot is completed.

  Next, the washing / drying unit 100 including the above-described washing tank 24 and a drying chamber (not shown in FIG. 2) located immediately above the washing tank 24 will be described.

  As shown in FIGS. 5 and 6, the cleaning / drying unit 100 is located above the cleaning tank 122 and a cleaning tank 122 (corresponding to the water cleaning tank 24 in FIG. 2) that stores a rinse liquid such as pure water (DIW). And a wafer guide 124 as a substrate holder for holding a plurality of wafers W to be processed.

  The cleaning tank 122 includes an inner tank 122a and an outer tank 122b that surrounds the upper end of the inner tank 122a and receives the cleaning liquid overflowed from the inner tank 122a.

  Rinse nozzles 125 for injecting a rinsing liquid such as pure water toward the wafer W located in the cleaning tank 122 are disposed on both sides of the lower part of the inner tank 122a. A rinse liquid is supplied to the rinse nozzle 125 from a rinse liquid supply source (not shown) via a rinse liquid supply mechanism (not shown).

  A drain pipe 126 provided with a discharge valve 126a is connected to a discharge port provided at the bottom of the inner tank 122a. A drain pipe 127 provided with a discharge valve 127a is also connected to a discharge port provided at the bottom of the outer tub 122b. An exhaust box 128 is provided outside the outer tub 122b, and an exhaust pipe 129 having a valve 129a interposed therein is connected to an exhaust port provided in the exhaust box 128.

  The drying chamber (drying chamber) 123 includes an immovable base portion (base body) 137 provided above the opening 122c at the upper end of the cleaning tank 122, and a hood portion (cover portion) having an inverted U-shaped cross section movable in the vertical direction. 139. The opening 122 c is provided with a shutter 136 for blocking communication between the cleaning tank 122 and the drying chamber 123. Between the base part 137 and the hood part 139, a seal member 138 such as an O-ring for sealing a gap between them is provided.

  The hood portion 139 can be moved up and down by a first lifting mechanism 144 having a linear actuator (not shown) such as a ball screw, and can be brought into and out of contact with the base portion 137. The wafer guide 124 can be moved up and down by a second lifting mechanism 145 having a linear actuator (not shown) such as a ball screw, and moved up and down in the cleaning tank 122 and the drying chamber 123.

A through hole 139 a is provided at the top of the hood portion 139, and a rod 124 a that connects the wafer guide 124 to the second lifting mechanism 145 passes through the through hole 139 a. The through hole 139a is provided with an inflation seal 152 that expands by supplying a pressurized gas and seals a gap between the inner peripheral surface of the through hole 139a and the outer peripheral surface of the rod 124a.

  The wafer guide 124 serving as a substrate holder is configured to hold 50 wafers W (wafers for two hoops) in an upright position and arranged in the horizontal direction at the half pitch described above.

  As shown in FIG. 8, the wafer guide 124 includes a plurality of (four in this example) holding rods 1241 that hold the peripheral edge of the wafer W, and a vertically extending back plate that supports one end of each holding rod 1241. 1242. The back plate 1242 is connected to the second lifting mechanism 145 via the rod 124a described above. The ends of the holding rods 1241 opposite to the back plates 1242 of the two adjacent holding rods 1241 are connected by a connecting plate 1243 in order to reduce the bending of the holding rod 1241.

  6 shows only the connecting plate 1243 of the wafer guide 124, and FIG. 7 shows the wafer guide 124 in a simplified manner.

  Each holding rod 1241 of the wafer guide 124 has a number of holding grooves 1244 which is at least one more than the batch size (in this case, 50 pieces for two hoops), for example, about 51 to 53 holding grooves 1244. In the following description, it is assumed that the number of holding grooves 1244 is 51. The 51 holding grooves 1244 are arranged in the longitudinal direction of the holding rod 1241 at the half pitch described above. The distance from the back plate 1242 of the Nth (N = 1 to 51) holding groove 1244 in each holding bar 1241 (that is, the position in the direction of arrow A in FIG. 2 (hereinafter referred to as “A direction position”)) is all equal. Each wafer W is held by the wafer guide 124 by fitting the peripheral edge thereof into the corresponding holding groove 1244 of the four holding rods 1241. For simplification of the drawings, the description of the holding grooves 1244 is omitted in each drawing, or the number of holding grooves smaller than the actual number is displayed.

  A plurality of discharge ports 1401 (see FIGS. 9 to 12) for discharging a drying accelerating gas containing IPA (isopropyl alcohol) vapor upward at both sides of the drying chamber 123 and at substantially the center in the height direction. A dry gas nozzle 140 is provided. The dry gas nozzle 140 is formed of a hollow rod-like body extending in the arrangement direction of the wafers W. The configuration of the dry gas nozzle 140 will be described in detail later.

An IPA steam generator 160 is connected to the dry gas nozzle 140. A hot N ₂ gas (heated nitrogen gas) supply source 161 and an IPA liquid supply source 162 are connected to the IPA steam generator 160. The IPA liquid supplied into the IPA vapor generator 160 is vaporized by the heat of the hot N ₂ gas, whereby a drying promoting gas composed of a mixed gas of IPA vapor and N ₂ gas is supplied to the drying gas nozzle 140. In the case of supplying only hot _{N 2} gas without supplying the IPA to IPA vapor generator 160, only the hot _{N 2} gas is supplied to the drying gas nozzle 140.

  On the side wall of the base portion 137 of the drying chamber 123, a discharge port 141 for discharging the drying gas from the drying chamber 123 is provided. The exhaust port 141 is connected to an exhaust device (not shown).

  Next, a series of processes performed in the cleaning / drying unit 100 will be described. The operations described below are also performed under the control of the control unit 40 in FIG.

  First, as schematically shown in FIG. 7, the wafer guide 124 is positioned in the drying chamber 123 by the second lifting mechanism 145, and the hood portion 139 is positioned by the first lifting mechanism 144. Next, the chuck rod 22 a of the wafer transfer device 22 holding 50 wafers is positioned above the wafer guide 124. Next, the wafer guide 124 rises and receives the wafer W from the chuck rod 22a. When the wafer is transferred, one of the three chuck rods 22a passes between the two holding rods 1241 at the center (see FIG. 8), and the two chuck rods 22a at both ends. However, the outer two holding rods 1241 pass further outside (see FIG. 8).

Then, the chuck rod 22a has exited from the drying chamber 1 23, through the opening 122c of the cleaning tank 122 in which the shutter 136 is in the open state, the wafer guide 124 which holds the wafer W is lowered, the rinse liquid As a result, the wafer W is loaded into the cleaning tank 122 in which pure water is already stored. Thereafter, the hood part 139 of the drying chamber 123 descends and comes into close contact with the base part 137. Thereafter, the final rinse process of the wafer W is performed while discharging pure water from the rinse nozzle 125.

Thereafter, the wafer guide 124 is raised and the wafer W is loaded into the drying chamber 123. Thereafter, the shutter 136 is closed, and the drying chamber 123 is shut off from the cleaning tank 122 and the outside air. Next, a drying accelerating gas, here, a mixed gas of IPA vapor and N ₂ gas, is jetted upward from each discharge port 1401 of the drying gas nozzle 140 as shown in FIGS. In order to avoid the mixed gas from directly colliding with the wafer W (at a high speed), the discharge port 1401 does not face the wafer W. The main stream of the drying promoting gas sprayed from the drying gas nozzles 140 on both sides is guided by the inner surface of the curved hood portion 139 and flows toward the upper central portion of the drying chamber 123 as indicated by a dotted line in FIG. Since the discharge port 141 is sucked, the drying accelerating gas that has joined at the upper central portion of the drying chamber 123 flows downward at a low flow rate, passes through a gap between adjacent wafers W, and moves toward the discharge port 141. By forming such a flow, the inside of the drying chamber 123 is made an IPA atmosphere. The IPA vapor contacts the front and back surfaces of each wafer W, condenses on the front and back surfaces of each wafer W, and pure water on the front and back surfaces of the wafer W is replaced by the condensed IPA.

Thereafter, the discharge of the IPA vapor from the dry gas nozzle 140 is stopped, and only the heated N ₂ gas is discharged from the dry gas nozzle 140. Thereby, drying of the wafer W is promoted.

After the drying of the wafer W is completed and the IPA is sufficiently exhausted from the drying chamber 123, the hood portion 139 of the drying chamber 123 is raised. Then, the wafer guide 124 is raised, the chuck rod 22a of the feeder 22 is positioned below the wafer guide 124, then, the wafer guide 124 is lowered to pass the wafer W on the chuck rod 22a. Thereafter, the chuck rod 22a is retracted from above the cleaning tank 1 22, and passes the wafer W held by the second array mechanism 21b.

  Next, members involved in the drying process of the wafer W in the drying chamber 123 will be described in detail.

  FIG. 10 is a diagram schematically illustrating a state where the drying process is performed on the wafer W in the drying chamber 123. Wafers W are held by holding rods 1241 in the state of being arranged in the horizontal direction at the half pitch described above. FIG. 10 shows only one of the four holding rods 1241 in a simplified manner. As described above, the holding rod 1241 has at least one holding groove 1244 larger than the batch size (the number of wafers W processed at one time, which is 50 in this embodiment). In FIG. 10 (same in FIGS. 11 and 12), there are cases where the batch size is set to 10 and 11 holding grooves 1244 are formed on the holding rod 1241 in order to simplify the drawing and simplify the description. It is shown. In FIG. 10 (the same applies to FIGS. 11 and 12), the dry gas nozzle 140 is displayed at a position lower than the actual position in order to facilitate understanding of the positional relationship between the gas discharge port 1401 of the dry gas nozzle 140 and the wafer W.

  As described above, the dry gas nozzle 140 has a hollow rod-like shape extending in parallel with the arrangement direction of the wafers W, and has a plurality of gas discharge ports 1401. The gas discharge ports 1401 are arranged in parallel with the arrangement direction of the wafers W at the above-described normal pitch (the arrangement pitch in the hoop F, which is twice the half pitch).

  Reference is now made again to FIG. Although not described in the above description, the wafers were taken out from the second FOUP F between the 25 wafers W taken out from the first FOUP F using the wafer transfer device 19, the wafer hand 211 and the wafer holder 212. When inserting between the 25 wafers W, the direction of the wafer W taken out from the second hoop F is opposite to the direction of the wafer W taken out from the first hoop F. The reversal of the orientation of the wafer W can be performed when the wafer transfer device 19 transfers the wafer W to the wafer hand 211 or the wafer holder 212. Thereby, the surface (first surface) which is the device forming surface of the first wafer W from the end faces the surface of the second wafer W, and the device non-forming surface of the second wafer W from the end. The back surface (second surface) and the back surface of the third wafer W face each other, and the front surface of the third wafer W from the end faces the front surface of the fourth wafer W (hereinafter referred to as this rule). (Surface-to-face arrangement). On the contrary, the back surface of the first wafer W from the end faces the back surface of the second wafer W, and the surface of the second wafer W from the end and the surface of the third wafer W are The arrangement may be such that the back surface of the third wafer W from the end faces the back surface of the fourth wafer W from the end (hereinafter, repeating the arrangement based on this rule) (back surface facing arrangement).

  In the front-to-face arrangement, the surface of the odd-numbered substrate from one end of the substrate arrangement faces the first direction and the back surface faces the second direction opposite to the first direction, and the even number from one end of the substrate arrangement The front surface of the second substrate faces the second direction, the back surface faces the first direction, the surface of the substrate at the other end of the substrate array faces the second direction, and the back surface faces the first direction. In the back-to-back arrangement, the surface of the odd-numbered substrate from one end of the substrate arrangement faces the second direction and the back surface faces the first direction, and the surface of the even-numbered substrate from the one end of the substrate arrangement Is directed to the first direction, the back surface is directed to the second direction, the front surface of the substrate at the other end of the substrate array is directed to the first direction, and the back surface is directed to the second direction. There is a need to select and use front-to-face and back-to-back arrangements according to the situation.

  In FIG. 10 (the same applies to FIGS. 11 and 12), a triangle mark is attached to the surface (device formation surface) of the wafer W. That is, the wafers W shown in FIG. 10 are arranged according to the surface-to-face arrangement described above.

  The gas discharge port 1401 of the dry gas nozzle 140 is disposed at a position corresponding to the gap between the back surfaces of the wafer W. More specifically, when the arrangement direction of the wafers W (that is, the arrangement direction of the gas discharge ports 1401) is the X direction, the X direction position of the gap between two adjacent wafer back surfaces (more specifically, the center of the gap) The gas discharge port 1401 is located at the same X-direction position as the X-direction position). The gas discharge port 1401 is not located at the same X-direction position as the X-direction position of the gap between two adjacent wafer surfaces.

  As described above, the gas discharge port 1401 is not directed toward the wafer W, but is directed upward (directly above). Therefore, the main flow of the drying promoting gas injected from the gas discharge port 1401 flows upward (directly above) (see the solid line arrow in FIG. 9) and does not go to the wafer W. However, the drying accelerating gas is jetted from the gas discharge port 1401 with a certain extent. For this reason, as indicated by a chain line arrow in FIG. 9, a part of the drying accelerating gas injected from the gas discharge port 1401 directly collides with the wafer. At this time, if the gas discharge port 1401 is located at a position corresponding to the gap between the surfaces of two adjacent wafers, the drying promoting gas sprayed from the gas discharge port 1401 directly collides with the surface of the wafer W. become. This causes the deterioration of the particle level as described above. In order to avoid this, the gas discharge port 1401 is positioned at a position corresponding to the gap between the back surfaces of two adjacent wafers.

  When the wafers W are arranged in a back-to-back arrangement without changing the position of the wafer W on the wafer guide 124, the result is as shown in FIG. That is, each gas discharge port 1401 of the dry gas nozzle 140 is located at a position corresponding to between the wafer surfaces. This can cause a problem of particle level deterioration on the wafer surface.

  Therefore, even when the back-to-back arrangement is adopted, for example, as shown in FIG. 12, the dry gas nozzle 140 and the wafer W are arranged such that each gas discharge port 1401 of the dry gas nozzle 140 is located between the back surfaces of the wafer. It is desirable that the positional relationship is established. However, the conventional cleaning processing apparatus does not have a configuration that realizes the above-described positional relationship in both the front-to-face arrangement and the back-to-back arrangement, or does not have a control function that realizes the above-described positional relation. .

On the other hand, the cleaning processing apparatus according to the present embodiment has the following configuration in order to realize the above positional relationship.
(1) The cleaning processing apparatus has adjusting means for adjusting the relative position between the dry gas nozzle 140 and the arranged wafers W in the wafer arrangement direction.
Any one of the following can be adopted as the adjusting means.
(1-1) When the wafer is transferred between the chuck rod 22a of the wafer transfer device 22 and the wafer guide 124 (the situation shown in FIG. 7), the position of the chuck rod 22a is at least in the arrangement direction of the wafer W. Chuck rod horizontal movement mechanism that can be moved by half pitch. Such a chuck rod horizontal movement mechanism is schematically shown in FIG. 7 by reference numeral 22b.
(1-2) When the wafer is transferred between the chuck rod 22a of the wafer transfer device 22 and the wafer guide 124 (the situation shown in FIG. 7), the position of the wafer guide 124 is at least in the arrangement direction of the wafer W. Wafer guide horizontal movement mechanism that can be moved by half pitch. Such a wafer guide horizontal movement mechanism is schematically shown in FIG. 7 by reference numeral 124b.
(1-3) A nozzle horizontal movement mechanism capable of moving the dry gas nozzle 140 by at least a half pitch in the arrangement direction of the wafers W. Such a nozzle horizontal movement mechanism is schematically indicated by reference numeral 1402 in FIG.
In the case of (1-1) and (1-2) above, (2) each holding rod 1241 has at least one more holding groove 1244 than the batch size.

In the case of (1-2) above, the inflation seal 152 can be configured to allow horizontal movement of the wafer guide 124 by about a half pitch.
When a wafer guide horizontal movement mechanism or a nozzle horizontal movement mechanism is adopted (in the case of (1-2) and (1-3) above), such a horizontal movement mechanism is used as an atmosphere in the cleaning tank 122 or the drying chamber 123. Although it is possible to provide it at a position where it is exposed to water, it is preferable to provide it at a position where it is not exposed to such an atmosphere as shown in FIGS. Each horizontal movement mechanism can be realized by using a linear actuator that can perform positioning with a desired accuracy, for example, a ball screw.

  Regardless of which of the chuck rod horizontal movement mechanism, the wafer guide horizontal movement mechanism, and the nozzle horizontal movement mechanism, these horizontal movement mechanisms are controlled by the control unit 40. That is, the control unit 40 is based on a command received from a host computer (not shown) that controls various manufacturing apparatuses provided in the semiconductor device manufacturing factory, or based on a command input by an operator via the user interface 42. Alternatively, based on the process recipe stored in the storage unit 43, the selected wafer arrangement (front-to-face arrangement or back-to-face arrangement) is grasped. Then, the control unit 40 uses the wafer transfer device 19, the wafer hand 211, and the wafer holder 212 to arrange the wafers W in the selected wafer arrangement. Further, the control unit 40 controls the horizontal movement mechanism so that each gas discharge port 1401 of the dry gas nozzle 140 is positioned at a position corresponding to the gap between the adjacent wafer back surfaces according to the designated wafer arrangement. .

  Of the three types of horizontal movement mechanisms described above, it is most preferable to employ a chuck rod horizontal movement mechanism. In many cases, the wafer transfer mechanism 22 is originally provided with such a chuck rod horizontal movement mechanism, and the above functions can be realized by using the configuration of the wafer transfer mechanism 22 as it is or by making a slight modification. Because.

  In both the front-to-face arrangement and the back-to-face arrangement, the following configuration can be adopted so that each gas discharge port of the dry gas nozzle is located at a position corresponding to the gap between the wafer back faces. That is, as schematically shown in FIG. 13, two first drying gas nozzles 140 </ b> A and two second drying gas nozzles 140 </ b> B are provided on both sides of the bottom of the drying chamber 123. The position of the discharge port 1401 of the first dry gas nozzle 140A is shifted by the distance corresponding to the above-described half pitch with respect to the position of the discharge port of the second dry gas nozzle 140B. The switching valve 163 can supply the drying accelerating gas sent out from the IPA steam generator 160 to either the first drying gas nozzle 140A or the second drying gas nozzle 140B.

  According to each embodiment described above, each discharge port 1401 of the dry gas nozzle 140 is positioned at a position corresponding to the gap between the back surfaces of the wafers W regardless of whether the wafers W are arranged face-to-face or face-to-face. it can. For this reason, it is possible to prevent the deterioration of the particle level on the wafer surface regardless of whether the front-to-back arrangement or the back-to-back arrangement is used.

  In the above embodiment, the substrate to be processed is a semiconductor wafer, but is not limited to this, and may be another type of substrate such as a glass substrate or a ceramic substrate.

W substrate (wafer)
19, 211, 212 Substrate array device 122 Liquid processing section (cleaning tank)
123 Drying section (drying room)
137, 139 Drying chamber 22 Substrate transfer device (wafer transfer device)
22b Movement mechanism of substrate transfer device 124 Substrate holder (wafer guide)
124b Substrate holder moving mechanism 1244 Substrate holding groove of substrate holder 140 Nozzle (drying gas nozzle)
140A First nozzle 140B Second nozzle 1401 Nozzle outlet 1402 Nozzle moving mechanism 163 Switching device (switching valve)
40 Control unit

Claims (11)

In a substrate processing method for performing a drying process collectively on a plurality of substrates,
A selection step of selecting one of the first array pattern and the second array pattern as the array pattern of the substrate;
According to the arrangement pattern selected in the selection step, a plurality of substrates are arranged in a horizontal direction with a predetermined arrangement pitch in a standing posture, with a gap formed between adjacent substrates. An alignment step of forming either a first substrate arrangement in which the substrates are arranged or a second substrate arrangement in which the substrates are arranged in a second arrangement pattern;
A holding step of holding the plurality of substrates together by a substrate holder while maintaining the substrate arrangement formed in the arrangement step;
In a state where the substrate is held by the substrate holder, the drying promoting gas is discharged from at least one nozzle having a plurality of discharge ports arranged in the horizontal direction at an arrangement pitch twice the arrangement pitch of the substrates. A drying promoting gas supply step of bringing the substrate into contact with the dried drying promoting gas;
With
In the first substrate arrangement, the front surface of the odd-numbered substrate from one end of the first substrate arrangement faces the first direction and the back surface faces the second direction opposite to the first direction, and the one end The surface of the even-numbered substrate faces the second direction and the back surface faces the first direction, and the surface of the substrate at the other end of the first substrate array faces the second direction and the back surface is the first direction. Facing one direction,
In the second substrate arrangement, the surface of the odd-numbered substrates from one end of the second substrate arrangement faces the second direction and the back surface faces the first direction, and the even-numbered substrates from the one end The front surface faces the first direction, the back surface faces the second direction, and the surface of the substrate at the other end of the second substrate array faces the first direction, and the back surface faces the second direction. the substrate processing method, by performing the adjustment in response to said first sequence pattern or the second array pattern selected by the selecting step, the drying when the drying accelerating gas supply step is performed A substrate processing method, further comprising an adjustment step in which the discharge port of the nozzle discharging the promotion gas is positioned at a position corresponding to a gap between the back surfaces of the substrate. The arranging step is performed by a substrate arranging device, and the holding step includes a substrate carrying device that has received a substrate from the substrate arranging device passing the substrate to the substrate holder, and the substrate carrying device includes the substrate A substrate holding member capable of holding the substrate while maintaining the substrate arrangement state arranged by the arrangement unit;
The substrate holder has a number of substrate holding grooves that is one or more more than the number of substrates constituting the first substrate arrangement and the second substrate arrangement, and the substrate holding grooves include the first substrate arrangement and the first substrate arrangement. Arranged at the same arrangement pitch as the arrangement pitch of the substrates constituting the second substrate arrangement,
In the adjusting step, when the substrate is transferred from the substrate holding member of the substrate transfer device to the substrate holder, the substrate is arranged in the second arrangement pattern when the substrate is arranged in the first arrangement pattern. The position of the substrate holding member when the substrate is transferred from the substrate holding member to the substrate holder is shifted by a distance corresponding to the arrangement pitch in the arrangement direction of the substrate on the substrate holder. The substrate processing method of Claim 1 including this. The arranging step is performed by a substrate arranging device, and the holding step includes a substrate carrying device that has received a substrate from the substrate arranging device passing the substrate to the substrate holder, and the substrate carrying device includes the substrate A substrate holding member capable of holding the substrate while maintaining the substrate arrangement state arranged by the arrangement device ;
The substrate holder has a number of substrate holding grooves that is one or more more than the number of substrates constituting the first substrate arrangement and the second substrate arrangement, and the substrate holding grooves include the first substrate arrangement and the first substrate arrangement. Arranged at the same arrangement pitch as the arrangement pitch of the substrates constituting the second substrate arrangement,
In the adjusting step, when the substrate is transferred from the substrate holding member of the substrate transfer device to the substrate holder, the substrate is arranged in the second arrangement pattern when the substrate is arranged in the first arrangement pattern. The position of the substrate holder when the substrate is transferred from the substrate holding member to the substrate holder is shifted by a distance corresponding to the arrangement pitch in the arrangement direction of the substrate on the substrate holder. The substrate processing method of Claim 1 including this.   In the adjusting step, the position of the nozzle on the substrate holder is determined depending on whether the substrate is arranged in the first arrangement pattern or the substrate is arranged in the second arrangement pattern. The substrate processing method according to claim 1, further comprising shifting the distance in the arrangement direction by a distance corresponding to the arrangement pitch. Two of the nozzles are provided, and the position of the discharge port of the first nozzle of these two nozzles corresponds to the arrangement pitch along the discharge port arrangement direction with respect to the position of the discharge port of the second nozzle. Is shifted by the distance
The adjustment step, the drying accelerating gas selects the first Roh nozzle as a nozzle for supplying the substrate, and the substrate are arranged in the second arrangement pattern when that substrate is arranged in the first arrangement pattern the drying accelerating gas as a nozzle for supplying a substrate comprising selecting a second Roh nozzle, a substrate processing method according to claim 1, wherein when there. A storage medium for storing a program that can be executed by a control device including a computer that controls the operation of the substrate processing apparatus, and when the program is executed by the computer, the control device claims to the substrate processing apparatus. A storage medium for executing the substrate processing method according to any one of 1 to 5 . A batch type substrate processing apparatus,
A substrate arranging device that arranges a plurality of substrates in a horizontal direction in a standing posture at a predetermined arrangement pitch with a gap formed between adjacent substrates;
While maintaining the arrangement state of the substrates arranged by the substrate arrangement apparatus, a drying processing unit that performs a predetermined drying process collectively on the plurality of substrates,
A substrate holding member capable of holding a substrate while maintaining the substrate arrangement state arranged by the substrate arrangement unit, and the plurality of substrates between the substrate arrangement apparatus and the drying processing unit A substrate transfer device for transferring
A control unit for controlling the operation of the substrate processing apparatus;
With
The substrate array device can form at least a first substrate array in which substrates are arrayed in a first array pattern and a second substrate array in which substrates are arrayed in a second array pattern,
In the first substrate arrangement, the front surface of the odd-numbered substrate from one end of the first substrate arrangement faces the first direction and the back surface faces the second direction opposite to the first direction, and the one end The surface of the even-numbered substrate faces the second direction and the back surface faces the first direction, and the surface of the substrate at the other end of the first substrate array faces the second direction and the back surface is the first direction. Facing one direction,
In the second substrate arrangement, the surface of the odd-numbered substrates from one end of the second substrate arrangement faces the second direction and the back surface faces the first direction, and the even-numbered substrates from the one end The front surface faces the first direction, the back surface faces the second direction, and the surface of the substrate at the other end of the second substrate array faces the first direction, and the back surface faces the second direction. The drying processing unit
A drying chamber;
In the drying chamber, a substrate holder that holds the plurality of substrates together while maintaining the arrangement state of the substrates arranged by the substrate arrangement device, the substrate holding device between the substrate transfer device A substrate holder capable of collectively delivering the plurality of substrates while maintaining the arrangement state of the substrates arranged by the arrangement unit;
At least one nozzle that has a plurality of discharge ports arranged in a horizontal direction at an arrangement pitch that is twice the arrangement pitch of the substrates by the substrate arrangement device, and that discharges the drying promoting gas from each discharge port into the drying chamber;
Have
The substrate processing apparatus further includes an adjusting unit that adjusts a relative positional relationship in the arrangement direction of the substrates between the substrate held by the substrate holder and the discharge port of the nozzle that discharges the drying accelerating gas. ,
The control unit controls the adjustment unit according to whether the substrates held by the substrate holder are arranged in the first arrangement pattern or the second arrangement pattern, thereby A substrate processing apparatus, wherein when the drying accelerating gas is discharged from a nozzle, the discharge port from which the drying accelerating gas is discharged is positioned at a position corresponding to a gap between the back surfaces of the substrate. The substrate holder has a number of substrate holding grooves that is one or more more than the number of substrates constituting the first substrate arrangement and the second substrate arrangement, and the substrate holding grooves include the first substrate arrangement and the first substrate arrangement. Arranged at the same arrangement pitch as the arrangement pitch of the substrates constituting the second substrate arrangement,
The substrate transport device has a moving mechanism for moving the substrate holding member forward and backward with respect to the substrate holder along the arrangement direction of the substrates,
The control unit uses the moving mechanism of the substrate transfer device as the adjustment unit, and when the substrate is arranged in the first arrangement pattern and when the substrate is arranged in the second arrangement pattern, The substrate processing apparatus according to claim 7, wherein a position where the substrate is transferred from the substrate holding member to the substrate holder is shifted by a distance corresponding to the arrangement pitch of the substrates in the arrangement direction of the substrates on the substrate holder. A moving mechanism for moving the substrate holder forward and backward along the arrangement direction of the substrates is provided;
The control unit uses the moving mechanism of the substrate holder as the adjustment unit, and when the substrate is arranged in the first arrangement pattern and when the substrate is arranged in the second arrangement pattern, The substrate processing apparatus according to claim 7, wherein a position where the substrate is transferred from the substrate holding member to the substrate holder is shifted by a distance corresponding to the arrangement pitch of the substrates in the arrangement direction of the substrates on the substrate holder. A moving mechanism for moving the nozzle back and forth along the arrangement direction of the substrates is provided;
The control unit uses the moving mechanism of the nozzle as the adjusting unit, and the nozzle is arranged when the substrate is arranged in the first arrangement pattern and when the substrate is arranged in the second arrangement pattern. The substrate processing apparatus according to claim 7, wherein the position is shifted by a distance corresponding to the arrangement pitch of the substrates in the arrangement direction of the substrates on the substrate holder. At least two nozzles are provided, and the position of the discharge port of the first nozzle of these two nozzles is in the arrangement direction of the substrate on the substrate holder with respect to the position of the discharge port of the second nozzle. It is shifted by a distance corresponding to the arrangement pitch of the substrates,
Switching device is provided for switching the discharge from the discharge and the previous SL second nozzle from the first nozzle,
Wherein the control unit uses the switching device as said adjusting means, when using the first nozzle, the substrate in the second arrangement pattern is arranged when the substrate is arranged in the first arrangement pattern The substrate processing apparatus according to claim 7, wherein the second nozzle is used.

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