JP6140181B2 - イオン注入法によって作られた結晶センサ - Google Patents
イオン注入法によって作られた結晶センサ Download PDFInfo
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- JP6140181B2 JP6140181B2 JP2014544755A JP2014544755A JP6140181B2 JP 6140181 B2 JP6140181 B2 JP 6140181B2 JP 2014544755 A JP2014544755 A JP 2014544755A JP 2014544755 A JP2014544755 A JP 2014544755A JP 6140181 B2 JP6140181 B2 JP 6140181B2
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- 235000016693 dipotassium tartrate Nutrition 0.000 claims description 2
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- AVTYONGGKAJVTE-OLXYHTOASA-L potassium L-tartrate Chemical compound [K+].[K+].[O-]C(=O)[C@H](O)[C@@H](O)C([O-])=O AVTYONGGKAJVTE-OLXYHTOASA-L 0.000 claims description 2
- 239000001472 potassium tartrate Substances 0.000 claims description 2
- RIUWBIIVUYSTCN-UHFFFAOYSA-N trilithium borate Chemical compound [Li+].[Li+].[Li+].[O-]B([O-])[O-] RIUWBIIVUYSTCN-UHFFFAOYSA-N 0.000 claims description 2
- AKVPCIASSWRYTN-UHFFFAOYSA-N zinc oxygen(2-) silicon(4+) Chemical compound [Si+4].[O-2].[Zn+2].[O-2].[O-2] AKVPCIASSWRYTN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
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- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005280 amorphization Methods 0.000 description 1
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- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
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- OKZIUSOJQLYFSE-UHFFFAOYSA-N difluoroboron Chemical compound F[B]F OKZIUSOJQLYFSE-UHFFFAOYSA-N 0.000 description 1
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- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
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Images
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/02—Analysing fluids
- G01N29/022—Fluid sensors based on microsensors, e.g. quartz crystal-microbalance [QCM], surface acoustic wave [SAW] devices, tuning forks, cantilevers, flexural plate wave [FPW] devices
-
- E—FIXED CONSTRUCTIONS
- E21—EARTH OR ROCK DRILLING; MINING
- E21B—EARTH OR ROCK DRILLING; OBTAINING OIL, GAS, WATER, SOLUBLE OR MELTABLE MATERIALS OR A SLURRY OF MINERALS FROM WELLS
- E21B47/00—Survey of boreholes or wells
- E21B47/10—Locating fluid leaks, intrusions or movements
- E21B47/107—Locating fluid leaks, intrusions or movements using acoustic means
-
- E—FIXED CONSTRUCTIONS
- E21—EARTH OR ROCK DRILLING; MINING
- E21B—EARTH OR ROCK DRILLING; OBTAINING OIL, GAS, WATER, SOLUBLE OR MELTABLE MATERIALS OR A SLURRY OF MINERALS FROM WELLS
- E21B49/00—Testing the nature of borehole walls; Formation testing; Methods or apparatus for obtaining samples of soil or well fluids, specially adapted to earth drilling or wells
- E21B49/08—Obtaining fluid samples or testing fluids, in boreholes or wells
- E21B49/10—Obtaining fluid samples or testing fluids, in boreholes or wells using side-wall fluid samplers or testers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/22—Details, e.g. general constructional or apparatus details
- G01N29/24—Probes
- G01N29/2437—Piezoelectric probes
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- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Geology (AREA)
- Mining & Mineral Resources (AREA)
- Geochemistry & Mineralogy (AREA)
- Pathology (AREA)
- Environmental & Geological Engineering (AREA)
- Fluid Mechanics (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Immunology (AREA)
- Health & Medical Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Geophysics (AREA)
- Geophysics And Detection Of Objects (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Remote Sensing (AREA)
Description
Claims (19)
- ダウンホールの流体における対象となる性質を感知し、該ダウンホールの流体を測定可能に配置された圧電性結晶を含む、曲げ振動を用いた圧電共振器を選択し、
イオン注入法を用いて該圧電性結晶にイオンを注入し、該圧電性結晶の内部に電極を作り、
前記曲げ振動を用いた圧電共振器を、地中を貫く掘削孔を通して搬送されるキャリアに連結し、
前記電極がダウンホールの流体における前記対象となる性質を感知する信号を与えることを含み、
前記圧電共振器は、前記電極に与えられた電気的刺激に応答して機械的に屈曲するように構成し、
前記電極は、前記信号を与えるために、前記機械的な屈曲に基づいて、前記対象となる性質に関連する電気インピーダンスを示すように構成した、ダウンホールの流体における対象となる性質を感知するセンサの製造方法。 - 前記圧電性結晶が、水晶、PZT、ニオブ酸リチウム、タンタル酸リチウム、ホウ酸リチウム、ベルリナイト、ヒ化ガリウム、四ホウ酸リチウム、リン酸アルミニウム、酸化ビスマスゲルマニウム、多結晶性チタン酸ジルコニウムセラミックス、高アルミナ質セラミックス、シリコン−酸化亜鉛複合体、又は酒石酸ジカリウムを含むことを特徴とする、請求項1に記載の製造方法。
- 前記電極が少なくとも1つの電極を有することを特徴とする、請求項1に記載の製造方法。
- 前記少なくとも1つの電極が相互に電気的に絶縁された2つ以上の電極を含むことを特徴とする、請求項3に記載の製造方法。
- 1以上の周波数の交流電圧を前記2つ以上の電極に印加すると、前記圧電性結晶が、流体内で共振するように設計された形状を有することを特徴とする、請求項4に記載の製造方法。
- 前記形状が音叉の形状であることを特徴とする、請求項5に記載の製造方法。
- 前記電極の一部にアクセスするために結晶材料を除去することをさらに含むことを特徴とする、請求項1に記載の製造方法。
- 前記電極の前記一部に金属層を蒸着して接触パッドを形成することをさらに含むことを特徴とする、請求項7に記載の製造方法。
- イオンビーム混合を用いて前記電極の前記一部に前記金属層を密着させることをさらに含むことを特徴とする、請求項8に記載の製造方法。
- イオンを注入することが結晶を焼き鈍すことを含むことを特徴とする、請求項1に記載の製造方法。
- イオンを注入することが、リソグラフィーを用いてマスクを作ることと、該マスクに従ってイオン注入を行うこととを含むことを特徴とする、請求項1に記載の製造方法。
- イオン注入を行った前記結晶の表面に、該結晶と同じ材料の1以上の格子層を形成することをさらに含むことを特徴とする、請求項1に記載の製造方法。
- 圧電性結晶を含む、曲げ振動を用いた圧電共振器を配置したキャリアを、地中を貫く掘削孔を通して搬送し、
注入されたイオンを含み、ダウンホールの流体における対象の性質に関する信号を与える電極を結晶の内部に有する圧電性結晶を前記対象の性質を測定可能に配設し、
該信号を用いて前記対象の性質の評価を行うことを含み、
前記圧電共振器は、前記電極に与えられた電気的刺激に応答して機械的に屈曲するように構成し、
前記電極は、前記信号を与えるように、前記機械的な屈曲に基づいて、前記対象となる性質に関連する電気インピーダンスを示すように構成した、ダウンホールの流体における対象の性質を評価する方法。 - 前記電極に電圧を印加することをさらに含むことを特徴とする、請求項13に記載の方法。
- 地層を貫く掘削孔を通して搬送されるように設計されているキャリアと、
ダウンホールの流体を測定可能であるように配置され、注入されたイオンを含むと共に該ダウンホールの流体における対象の性質に関する信号を与える電極を結晶の内部に有する圧電性結晶を含む、前記キャリアに配置された、曲げ振動を用いた圧電共振器と、
該信号を受けてダウンホールの流体における前記対象の性質を評価する処理装置と、
を含み、
前記圧電共振器は、前記電極に与えられた電気的刺激に応答して機械的に屈曲するように構成し、
前記電極は、前記信号を与えるように、前記機械的な屈曲に基づいて、前記対象となる性質に関連する電気インピーダンスを示すように構成した、ダウンホールの流体における対象の性質を評価する装置。 - 前記電極が接触パッドに連結されていることを特徴とする、請求項15に記載の装置。
- 交流電圧を前記接触パッドに印加すると、前記圧電性結晶が流体内で共振するように設計されていることを特徴とする、請求項16に記載の装置。
- 前記電極が対象の性質を感知することに係る信号を受け取ると、該電極が電荷を伝導するように設計され、前記対象の性質を評価することを特徴とする、請求項15に記載の装置。
- 前記キャリアが、ワイヤライン、スリックライン(slickline)、ドリルストリング、又はコイル管であることを特徴とする、請求項15に記載の装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/307,801 | 2011-11-30 | ||
US13/307,801 US9151153B2 (en) | 2011-11-30 | 2011-11-30 | Crystal sensor made by ion implantation for sensing a property of interest within a borehole in the earth |
PCT/US2012/064623 WO2013081806A1 (en) | 2011-11-30 | 2012-11-12 | Crystal sensor made by ion implantation |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2015505958A JP2015505958A (ja) | 2015-02-26 |
JP2015505958A5 JP2015505958A5 (ja) | 2016-01-07 |
JP6140181B2 true JP6140181B2 (ja) | 2017-05-31 |
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Application Number | Title | Priority Date | Filing Date |
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JP2014544755A Active JP6140181B2 (ja) | 2011-11-30 | 2012-11-12 | イオン注入法によって作られた結晶センサ |
Country Status (5)
Country | Link |
---|---|
US (1) | US9151153B2 (ja) |
EP (1) | EP2786178B1 (ja) |
JP (1) | JP6140181B2 (ja) |
CN (1) | CN104011565B (ja) |
WO (1) | WO2013081806A1 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9677394B2 (en) * | 2013-06-28 | 2017-06-13 | Schlumberger Technology Corporation | Downhole fluid sensor with conductive shield and method of using same |
EP3052968A1 (en) * | 2013-12-09 | 2016-08-10 | Halliburton Energy Services, Inc. | Polycrystalline transparent ceramics for use with a logging sensor or tool |
WO2016108914A1 (en) | 2014-12-31 | 2016-07-07 | Halliburton Energy Services Inc. | Integrated multiple parameter sensing system and method for leak detection |
WO2017027307A2 (en) * | 2015-08-07 | 2017-02-16 | Saudi Arabian Oil Company | Method and device for measuring fluid properties using an electromechanical resonator |
US9562430B1 (en) * | 2015-10-05 | 2017-02-07 | Baker Hughes Incorporated | Chemiresistive sensors for downhole tools |
EP3440459B1 (en) * | 2016-06-02 | 2021-09-29 | Halliburton Energy Services, Inc. | Acoustic receiver with cylindrical crystal |
US11333015B2 (en) | 2016-08-04 | 2022-05-17 | Saudi Arabian Oil Company | Method for capacitive cancellation of tuning fork for fluid property measurements |
US10958358B2 (en) | 2018-05-22 | 2021-03-23 | Baker Hughes, A Ge Company, Llc | Signal transmission system and method |
US11066930B2 (en) | 2018-12-31 | 2021-07-20 | Baker Hughes Oilfield Operations Llc | Systems and method for analyzing downhole fluid properties using co-located multi-modal sensors |
US20200208514A1 (en) | 2018-12-31 | 2020-07-02 | Baker Hughes Oilfield Operations Llc | Systems and methods for obtaining downhole fluid properties |
GB2610149B (en) * | 2018-12-31 | 2023-07-26 | Baker Hughes Oilfield Operations Llc | Systems and methods for obtaining downhole fluid properties |
EP4067893A1 (en) * | 2021-03-31 | 2022-10-05 | MEAS France | A fluid sensor for sensing properties of a fluid comprising a tuning fork mechanical resonator |
Family Cites Families (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4471255A (en) * | 1978-10-05 | 1984-09-11 | Clarion Co., Ltd. | Surface acoustic wave parametric device |
CA1180914A (en) | 1981-08-17 | 1985-01-15 | James M. O'connor | Micromechanical chemical sensor |
US4510671A (en) | 1981-08-31 | 1985-04-16 | Kulite Semiconductor Products, Inc. | Dielectrically isolated transducer employing single crystal strain gages |
US5734105A (en) * | 1992-10-13 | 1998-03-31 | Nippondenso Co., Ltd. | Dynamic quantity sensor |
JP2536379B2 (ja) * | 1992-12-31 | 1996-09-18 | 日本電気株式会社 | 圧電トランス |
US5633616A (en) * | 1994-10-07 | 1997-05-27 | Mitsubishi Denki Kabushiki Kaisha | Thin film saw filter including doped electrodes |
JPH0983029A (ja) * | 1995-09-11 | 1997-03-28 | Mitsubishi Electric Corp | 薄膜圧電素子の製造方法 |
JP3039364B2 (ja) * | 1996-03-11 | 2000-05-08 | 株式会社村田製作所 | 角速度センサ |
DE19636461C2 (de) * | 1996-09-07 | 1998-07-09 | Forschungszentrum Juelich Gmbh | Sensoranordnung und Verfahren zu deren Herstellung |
US6429784B1 (en) * | 1999-02-19 | 2002-08-06 | Dresser Industries, Inc. | Casing mounted sensors, actuators and generators |
US6489616B2 (en) | 2001-03-19 | 2002-12-03 | The Board Of Governors Of Southwest Missouri State University | Doped, organic carbon-containing sensor for infrared detection and a process for the preparation thereof |
GB2392980B (en) * | 2001-05-15 | 2005-06-15 | Baker Hughes Inc | Method and apparatus for downhole fluid characterization using flxural mechanical resonators |
US6710680B2 (en) * | 2001-12-20 | 2004-03-23 | Motorola, Inc. | Reduced size, low loss MEMS torsional hinges and MEMS resonators employing such hinges |
JP4657660B2 (ja) * | 2003-09-12 | 2011-03-23 | パナソニック株式会社 | 薄膜バルク音響共振器、その製造方法、フィルタ、複合電子部品および通信機器 |
US20050182566A1 (en) * | 2004-01-14 | 2005-08-18 | Baker Hughes Incorporated | Method and apparatus for determining filtrate contamination from density measurements |
US7000298B2 (en) * | 2004-04-20 | 2006-02-21 | Honeywell International Inc. | Method a quartz sensor |
JP2006228866A (ja) * | 2005-02-16 | 2006-08-31 | Seiko Epson Corp | 圧電アクチュエータの製造方法、圧電アクチュエータ、液体噴射ヘッド及び液体噴射装置 |
US7406761B2 (en) * | 2005-03-21 | 2008-08-05 | Honeywell International Inc. | Method of manufacturing vibrating micromechanical structures |
US7401525B2 (en) | 2005-03-23 | 2008-07-22 | Honeywell International Inc. | Micro-machined pressure sensor with polymer diaphragm |
JP4514639B2 (ja) * | 2005-03-31 | 2010-07-28 | 国立大学法人群馬大学 | カンチレバー型センサ |
US7401522B2 (en) * | 2005-05-26 | 2008-07-22 | Rosemount Inc. | Pressure sensor using compressible sensor body |
GB0612754D0 (en) * | 2006-06-27 | 2006-08-09 | Univ Cambridge Tech | Semiconductor device transducer and method |
US20090100925A1 (en) * | 2006-10-27 | 2009-04-23 | Baker Hughes Incorporated | System and method for coating flexural mechanical resonators |
JP2009100464A (ja) * | 2007-09-25 | 2009-05-07 | Panasonic Electric Works Co Ltd | 共振装置およびその製造方法 |
JP4636292B2 (ja) * | 2008-08-27 | 2011-02-23 | 株式会社村田製作所 | 電子部品及び電子部品の製造方法 |
WO2010067794A1 (ja) * | 2008-12-10 | 2010-06-17 | 株式会社村田製作所 | 圧電性複合基板の製造方法、および圧電素子の製造方法 |
DE112010000861B4 (de) * | 2009-01-15 | 2016-12-15 | Murata Manufacturing Co., Ltd. | Piezoelektrisches Bauelement und Verfahren zur Herstellung eines piezoelektrischenBauelements |
US10488286B2 (en) | 2009-11-30 | 2019-11-26 | Chevron U.S.A. Inc. | System and method for measurement incorporating a crystal oscillator |
FR2953647B1 (fr) * | 2009-12-04 | 2011-11-25 | Commissariat Energie Atomique | Procede de realisation d'un resonateur acoustique a ondes de volumes de type fbar |
US8631702B2 (en) * | 2010-05-30 | 2014-01-21 | Honeywell International Inc. | Hemitoroidal resonator gyroscope |
US8878548B2 (en) * | 2010-06-11 | 2014-11-04 | Baker Hughes Incorporated | Method for treating and sealing piezoelectric tuning forks |
JP5637068B2 (ja) * | 2010-08-27 | 2014-12-10 | 株式会社村田製作所 | 弾性境界波装置の製造方法および弾性境界波装置 |
US20130063149A1 (en) * | 2011-07-14 | 2013-03-14 | Baker Hughes Incorporated | Reducing fluid capacitance and conductance effects on piezoelectric resonator measurements |
WO2013031724A1 (ja) * | 2011-09-01 | 2013-03-07 | 株式会社村田製作所 | 圧電バルク波装置及びその製造方法 |
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CN104011565B (zh) | 2017-11-28 |
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US20130134981A1 (en) | 2013-05-30 |
WO2013081806A1 (en) | 2013-06-06 |
JP2015505958A (ja) | 2015-02-26 |
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US9151153B2 (en) | 2015-10-06 |
EP2786178B1 (en) | 2019-11-06 |
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