JP6133212B2 - アパーチャアレイ冷却部を備えた荷電粒子リソグラフィシステム - Google Patents

アパーチャアレイ冷却部を備えた荷電粒子リソグラフィシステム Download PDF

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JP6133212B2
JP6133212B2 JP2013538224A JP2013538224A JP6133212B2 JP 6133212 B2 JP6133212 B2 JP 6133212B2 JP 2013538224 A JP2013538224 A JP 2013538224A JP 2013538224 A JP2013538224 A JP 2013538224A JP 6133212 B2 JP6133212 B2 JP 6133212B2
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aperture array
aperture
array element
regions
charged particle
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Japanese (ja)
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JP2013544030A5 (https=
JP2013544030A (ja
Inventor
ビエランド、マルコ・ヤン−ヤコ
ファン・ビーン、アレクサンダー・ヘンドリク・ビンセント
デ・ヨン、ヘンドリク・ヤン
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マッパー・リソグラフィー・アイピー・ビー．ブイ．
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/002—Cooling arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H01J2237/0435—Multi-aperture
    • H01J2237/0437—Semiconductor substrate

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)
JP2013538224A 2010-11-13 2011-11-14 アパーチャアレイ冷却部を備えた荷電粒子リソグラフィシステム Active JP6133212B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US41339610P 2010-11-13 2010-11-13
US61/413,396 2010-11-13
US41520010P 2010-11-18 2010-11-18
US61/415,200 2010-11-18
US42171710P 2010-12-10 2010-12-10
US61/421,717 2010-12-10
PCT/EP2011/070030 WO2012065941A1 (en) 2010-11-13 2011-11-14 Charged particle lithography system with aperture array cooling

Publications (3)

Publication Number Publication Date
JP2013544030A JP2013544030A (ja) 2013-12-09
JP2013544030A5 JP2013544030A5 (https=) 2015-01-15
JP6133212B2 true JP6133212B2 (ja) 2017-05-24

Family

ID=45065871

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013538224A Active JP6133212B2 (ja) 2010-11-13 2011-11-14 アパーチャアレイ冷却部を備えた荷電粒子リソグラフィシステム

Country Status (6)

Country Link
US (1) US8558196B2 (https=)
EP (1) EP2638560B1 (https=)
JP (1) JP6133212B2 (https=)
KR (1) KR101755577B1 (https=)
TW (1) TWI562183B (https=)
WO (1) WO2012065941A1 (https=)

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WO2012062932A1 (en) 2010-11-13 2012-05-18 Mapper Lithography Ip B.V. Charged particle lithography system with intermediate chamber
NL2007604C2 (en) * 2011-10-14 2013-05-01 Mapper Lithography Ip Bv Charged particle system comprising a manipulator device for manipulation of one or more charged particle beams.
US10586625B2 (en) 2012-05-14 2020-03-10 Asml Netherlands B.V. Vacuum chamber arrangement for charged particle beam generator
EP2850635B1 (en) * 2012-05-14 2016-04-27 Mapper Lithography IP B.V. Charged particle multi-beamlet lithography system and cooling arrangement manufacturing method
US9724553B2 (en) * 2013-03-15 2017-08-08 Arqex Outdoor Fitness Systems, Llc Resistance band assembly and a method of varying a resistive force applied thereby
KR102377771B1 (ko) 2014-06-13 2022-03-23 인텔 코포레이션 Ｅ 빔 스태거형 빔 애퍼처 어레이
US10486232B2 (en) * 2015-04-21 2019-11-26 Varian Semiconductor Equipment Associates, Inc. Semiconductor manufacturing device with embedded fluid conduits
JP2017199610A (ja) * 2016-04-28 2017-11-02 株式会社ニューフレアテクノロジー ステージ機構
KR20190032592A (ko) 2016-08-08 2019-03-27 에이에스엠엘 네델란즈 비.브이. 전자 이미터 및 이의 제작 방법
US10663746B2 (en) * 2016-11-09 2020-05-26 Advanced Semiconductor Engineering, Inc. Collimator, optical device and method of manufacturing the same
KR102876293B1 (ko) * 2017-08-08 2025-10-27 에이에스엠엘 네델란즈 비.브이. 하전 입자 차단 요소, 이러한 요소를 포함하는 노광 장치, 및 이러한 노광 장치를 사용하는 방법
EP3703100A1 (en) * 2019-02-27 2020-09-02 FEI Company Charged particle beam device for inspection of a specimen with a plurality of charged particle beamlets
EP3716313A1 (en) * 2019-03-28 2020-09-30 ASML Netherlands B.V. Aperture array with integrated current measurement
EP4086933A1 (en) 2021-05-03 2022-11-09 ASML Netherlands B.V. Charged particle system, method of processing a sample using a multi-beam of charged particles
IL303577A (en) 2020-12-14 2023-08-01 Asml Netherlands Bv Charged particle system, a sample processing method using multiple beams of charged particles
WO2022135926A1 (en) 2020-12-23 2022-06-30 Asml Netherlands B.V. Electron lens
EP4020517A1 (en) 2020-12-23 2022-06-29 ASML Netherlands B.V. Electron-optical device
US11615939B2 (en) * 2021-03-24 2023-03-28 Kla Corporation Shaped aperture set for multi-beam array configurations
JPWO2024180616A1 (https=) * 2023-02-27 2024-09-06

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JPH11224846A (ja) * 1998-02-04 1999-08-17 Nikon Corp レチクル照明光学系
JPH11354063A (ja) * 1998-06-05 1999-12-24 Nikon Corp 電子線転写装置
JP2000030647A (ja) * 1998-07-10 2000-01-28 Advantest Corp 荷電粒子ビーム露光装置
GB2351567A (en) 1999-04-19 2001-01-03 Ims Ionen Mikrofab Syst Transmission mask and mask-exposure arrangement for projection lithography
JP2001237161A (ja) * 2000-02-23 2001-08-31 Nikon Corp 荷電粒子線光学系及び電子光学系
JP4355446B2 (ja) * 2000-12-28 2009-11-04 株式会社アドバンテスト 電子ビーム露光装置及び電子ビーム成形部材
JP4156809B2 (ja) * 2001-01-31 2008-09-24 株式会社アドバンテスト 電子ビーム露光装置及び電子レンズ
EP2302457B1 (en) 2002-10-25 2016-03-30 Mapper Lithography Ip B.V. Lithography system
CN101414534B (zh) 2002-10-30 2012-10-03 迈普尔平版印刷Ip有限公司 电子束曝光系统
KR101068607B1 (ko) 2003-03-10 2011-09-30 마퍼 리쏘그라피 아이피 비.브이. 복수 개의 빔렛 발생 장치
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JP5438670B2 (ja) * 2009-03-27 2014-03-12 株式会社アドバンテスト マルチコラム電子線描画用マスク保持装置及びマルチコラム電子線描画装置
US8604411B2 (en) * 2010-11-13 2013-12-10 Mapper Lithography Ip B.V. Charged particle beam modulator
WO2012062932A1 (en) * 2010-11-13 2012-05-18 Mapper Lithography Ip B.V. Charged particle lithography system with intermediate chamber
WO2012062854A1 (en) * 2010-11-13 2012-05-18 Mapper Lithography Ip B.V. Lithography system and method of refracting

Also Published As

Publication number Publication date
TWI562183B (en) 2016-12-11
US8558196B2 (en) 2013-10-15
EP2638560B1 (en) 2017-02-22
JP2013544030A (ja) 2013-12-09
KR20130126936A (ko) 2013-11-21
US20120292524A1 (en) 2012-11-22
EP2638560A1 (en) 2013-09-18
TW201236045A (en) 2012-09-01
WO2012065941A1 (en) 2012-05-24
KR101755577B1 (ko) 2017-07-07

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