JP6132688B2 - プラズマ処理装置及びプラズマ処理方法 - Google Patents
プラズマ処理装置及びプラズマ処理方法 Download PDFInfo
- Publication number
- JP6132688B2 JP6132688B2 JP2013149021A JP2013149021A JP6132688B2 JP 6132688 B2 JP6132688 B2 JP 6132688B2 JP 2013149021 A JP2013149021 A JP 2013149021A JP 2013149021 A JP2013149021 A JP 2013149021A JP 6132688 B2 JP6132688 B2 JP 6132688B2
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- JP
- Japan
- Prior art keywords
- film
- processing
- mask
- wavelength
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
- H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
- H01J37/32972—Spectral analysis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/3299—Feedback systems
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
- H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/071—Manufacture or treatment of dielectric parts thereof
- H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
- H10W20/095—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by irradiating with electromagnetic or particle radiation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Drying Of Semiconductors (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013149021A JP6132688B2 (ja) | 2013-07-18 | 2013-07-18 | プラズマ処理装置及びプラズマ処理方法 |
| TW103101818A TWI549185B (zh) | 2013-07-18 | 2014-01-17 | Plasma processing device and plasma processing method |
| KR1020140013273A KR101582208B1 (ko) | 2013-07-18 | 2014-02-05 | 플라즈마 처리 장치 및 플라즈마 처리 방법 |
| US14/183,562 US9190336B2 (en) | 2013-07-18 | 2014-02-19 | Plasma processing apparatus and plasma processing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013149021A JP6132688B2 (ja) | 2013-07-18 | 2013-07-18 | プラズマ処理装置及びプラズマ処理方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015023105A JP2015023105A (ja) | 2015-02-02 |
| JP2015023105A5 JP2015023105A5 (https=) | 2016-09-23 |
| JP6132688B2 true JP6132688B2 (ja) | 2017-05-24 |
Family
ID=52343896
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013149021A Active JP6132688B2 (ja) | 2013-07-18 | 2013-07-18 | プラズマ処理装置及びプラズマ処理方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9190336B2 (https=) |
| JP (1) | JP6132688B2 (https=) |
| KR (1) | KR101582208B1 (https=) |
| TW (1) | TWI549185B (https=) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6523732B2 (ja) * | 2015-03-26 | 2019-06-05 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
| JP6553398B2 (ja) | 2015-05-12 | 2019-07-31 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置、データ処理装置およびデータ処理方法 |
| JP6504915B2 (ja) * | 2015-05-25 | 2019-04-24 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
| JP6673173B2 (ja) * | 2016-12-12 | 2020-03-25 | 三菱電機株式会社 | 半導体装置の製造方法 |
| JP7451540B2 (ja) * | 2019-01-22 | 2024-03-18 | アプライド マテリアルズ インコーポレイテッド | パルス状電圧波形を制御するためのフィードバックループ |
| JP6762401B2 (ja) * | 2019-04-25 | 2020-09-30 | 株式会社日立ハイテク | プラズマ処理装置およびプラズマ処理方法 |
| KR102510305B1 (ko) * | 2020-03-11 | 2023-03-17 | 주식회사 히타치하이테크 | 플라스마 처리 장치 및 플라스마 처리 방법 |
| US12062530B2 (en) * | 2020-06-25 | 2024-08-13 | Hitachi High-Tech Corporation | Vacuum processing apparatus and vacuum processing method |
| KR102515864B1 (ko) * | 2020-09-17 | 2023-03-31 | 주식회사 히타치하이테크 | 플라스마 처리 장치 및 플라스마 처리 방법 |
| CN114765112B (zh) * | 2021-01-11 | 2025-05-27 | 华邦电子股份有限公司 | 蚀刻系统及其蚀刻方法 |
| US11443928B2 (en) * | 2021-01-31 | 2022-09-13 | Winbond Electronics Corp. | Etching apparatus and etching method thereof |
| JP7696258B2 (ja) * | 2021-09-03 | 2025-06-20 | 東京エレクトロン株式会社 | 成膜システムおよび成膜方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6413867B1 (en) * | 1999-12-23 | 2002-07-02 | Applied Materials, Inc. | Film thickness control using spectral interferometry |
| US6903826B2 (en) * | 2001-09-06 | 2005-06-07 | Hitachi, Ltd. | Method and apparatus for determining endpoint of semiconductor element fabricating process |
| JP3694662B2 (ja) | 2001-09-17 | 2005-09-14 | 株式会社日立製作所 | 半導体素子製造プロセスにおける膜の処理量測定方法と装置、及びそれを用いた被処理材の処理方法と装置、及びそれを用いたプロセスの終点判定方法と装置 |
| KR100426988B1 (ko) * | 2001-11-08 | 2004-04-14 | 삼성전자주식회사 | 반도체 제조장비의 식각 종말점 검출장치 및 그에 따른검출방법 |
| JP4349848B2 (ja) * | 2003-06-12 | 2009-10-21 | パナソニック株式会社 | 終点検出方法および終点検出装置 |
| JP2008218898A (ja) * | 2007-03-07 | 2008-09-18 | Hitachi High-Technologies Corp | プラズマ処理装置 |
| KR100945889B1 (ko) * | 2009-05-08 | 2010-03-05 | 가부시키가이샤 히다치 하이테크놀로지즈 | 플라즈마 처리의 판정방법 |
| JP5199981B2 (ja) | 2009-11-04 | 2013-05-15 | 東京エレクトロン株式会社 | エッチング深さの検出方法並びにエッチングモニター装置及びエッチング装置 |
-
2013
- 2013-07-18 JP JP2013149021A patent/JP6132688B2/ja active Active
-
2014
- 2014-01-17 TW TW103101818A patent/TWI549185B/zh active
- 2014-02-05 KR KR1020140013273A patent/KR101582208B1/ko active Active
- 2014-02-19 US US14/183,562 patent/US9190336B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2015023105A (ja) | 2015-02-02 |
| US20150024521A1 (en) | 2015-01-22 |
| TWI549185B (zh) | 2016-09-11 |
| KR101582208B1 (ko) | 2016-01-04 |
| KR20150010559A (ko) | 2015-01-28 |
| TW201505094A (zh) | 2015-02-01 |
| US9190336B2 (en) | 2015-11-17 |
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