JP6128758B2 - 発光素子の製造方法 - Google Patents

発光素子の製造方法 Download PDF

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Publication number
JP6128758B2
JP6128758B2 JP2012129457A JP2012129457A JP6128758B2 JP 6128758 B2 JP6128758 B2 JP 6128758B2 JP 2012129457 A JP2012129457 A JP 2012129457A JP 2012129457 A JP2012129457 A JP 2012129457A JP 6128758 B2 JP6128758 B2 JP 6128758B2
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substrate
light emitting
layer
altered
light
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JP2013254841A (ja
JP2013254841A5 (cg-RX-API-DMAC7.html
Inventor
▲呈▼祥 何
▲呈▼祥 何
標▲達▼ 陳
標▲達▼ 陳
喨▲勝▼ 紀
喨▲勝▼ 紀
俊昌 陳
俊昌 陳
▲ぺい▼珊 ▲房▼
▲ぺい▼珊 ▲房▼
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Epistar Corp
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Epistar Corp
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JP2012129457A 2012-06-07 2012-06-07 発光素子の製造方法 Active JP6128758B2 (ja)

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JP2012129457A JP6128758B2 (ja) 2012-06-07 2012-06-07 発光素子の製造方法

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JP2012129457A JP6128758B2 (ja) 2012-06-07 2012-06-07 発光素子の製造方法

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JP2013254841A JP2013254841A (ja) 2013-12-19
JP2013254841A5 JP2013254841A5 (cg-RX-API-DMAC7.html) 2015-07-02
JP6128758B2 true JP6128758B2 (ja) 2017-05-17

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Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003338468A (ja) * 2002-03-12 2003-11-28 Hamamatsu Photonics Kk 発光素子の製造方法、発光ダイオード、及び半導体レーザ素子
JP5232375B2 (ja) * 2006-10-13 2013-07-10 アイシン精機株式会社 半導体発光素子の分離方法
US8728916B2 (en) * 2009-02-25 2014-05-20 Nichia Corporation Method for manufacturing semiconductor element
JP5528904B2 (ja) * 2010-05-20 2014-06-25 株式会社ディスコ サファイアウェーハの分割方法
JP2011243875A (ja) * 2010-05-20 2011-12-01 Disco Abrasive Syst Ltd サファイアウェーハの分割方法

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