JP6114270B2 - 電界によりパターン及び構造形成を制御する方法及びデバイス - Google Patents
電界によりパターン及び構造形成を制御する方法及びデバイス Download PDFInfo
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Description
電圧ジェネレータ38、バイアス接続36、EFA34、内部EFA42、及び/又は放射源40のうち1つ又は複数を、それらの動作を制御するように構成されたコンピュータ48に動作可能に結合してよい。図2は、1つのコンピュータ48を示す。コンピュータ48は、本発明に係る実施形態に従った使用に適したマルチユーザコンピュータ、シングルユーザコンピュータ、ハンドヘルドデバイス、ネットワーク接続されたデバイス、又は組み込み型デバイスなどのコンピュータ、コンピュータシステム、コンピューティングシステム、サーバ、ディスクアレイ、又はプログラマブルデバイスのいかなる種類も表すと考えてよい。コンピュータ48を、例えばネットワークインタフェース(「ネットワークI/F」54として図示)を通じたクラスタコンピューティングシステム又は他の分散型のコンピューティングシステムにおいて、1つ又は複数のネットワーク52を用いて1つ又は複数のネットワーク接続されたコンピュータ50とともに実施してよい。コンピュータ48を、簡潔さのため、「コンピュータ」と呼ぶこととする。とは言え、用語「コンピューティングシステム」が本発明に係る実施形態と調和する他の適切なプログラマブル電子デバイスをさらに含みうることが、十分理解されるべきである。
Vi=V0sin(ωit+iΔφ) (1)
に従って、進行波を同相及び異相の干渉によって生成してよい。上記の進行波は、ナノオブジェクト28の運動(回転及び/又は並進)を誘導する効果がある。
Vj=V0sin(ωjt+jΔφ) (2)
に従ってシフトしてよい。
本出願は、先行して2011年8月2日に申請された同時継続の仮出願番号第61/514,461号及び2012年6月26日に申請された同時継続の仮出願番号第61/664,690号による利益と優先権とを主張し、それぞれの開示を本明細書全体において明確に参照により援用する。本出願は、さらに、本出願の発明者により同日付けで申請され、“SYSTEM AND METHOD FOR TISSUE CONSTRUCTION USING AN ELECTRIC FIELD APPLICATOR”と題された、共通して割り当てられている国際出願番号第xx/xxx,xxx号(代理人整理番号第TDCT−034WO号)に関連し、本明細書において明確に参照により援用する。
Claims (18)
- 基板の処理中に電界による影響を受ける処理媒体を受容するように構成された処理チャンバと、
前記のチャンバ内で処理すべき基板を保持する基板保持部と、
処理中に、前記基板を、非一様な、時間空間的な電界にさらすように動作可能な少なくとも1つの電界アプリケータであって、前記電界アプリケータが電気的バイアスによって電気的に活性化されて、前記処理媒体が前記電界の存在下において双極性になるときに前記電界が前記処理媒体に影響を与える能力がある、電界アプリケータと、
前記少なくとも1つの電界アプリケータに時間変化する電気的バイアスを結合して、それにより前記電界アプリケータを活性化して、前記処理媒体又はその中の粒子が前記電界による影響を受けるように前記処理媒体又はその中の粒子の双極性特性と相互作用するように動作可能な分布結合ユニットと、
時間及び前記基板に対する位置の関数として変化する電界である時間空間的な電界であって、前記関数は、前記基板の処理における、又は前記基板の上の前記処理媒体又は粒子に対して、移動又は整合の影響を与えることに有効である、時間空間的な電界と、
を含む、処理装置。 - 前記少なくとも1つの電界アプリケータは前記処理チャンバの内部に位置付けられ、前記基板に隣接する、請求項1に記載の処理装置。
- 当該処理装置は、
少なくとも1つの電界アプリケータが前記処理チャンバの外部に位置付けられ、前記のチャンバは前記少なくとも1つの電界アプリケータから前記基板に前記電界を送るように構成される、
ことを含む、請求項1又は請求項2に記載の処理装置。 - 前記少なくとも1つの電界アプリケータは交換可能である、請求項1又は請求項2に記載の処理装置。
- 前記少なくとも1つの電界アプリケータは、前記基板のサイズと等しいサイズであるか、あるいは前記基板のサイズより小さいサイズであり、前記基板にわたってスキャンされるように構成されるかのいずれかである、請求項1に記載の処理装置。
- 前記基板を照射するように構成された、マイクロ波放射源、赤外線放射源、又は紫外線放射源をさらに含む、請求項1に記載の処理装置。
- 前記電気的バイアスは、DC電位、AC電位又はRF電位のうちいずれかを含み、前記分布結合ユニットによって前記少なくとも1つの電界アプリケータに直接の電気的接触により、誘導結合により、静電結合により、又はそれらの組み合わせにより印加される、請求項1に記載の処理装置。
- 前記処理媒体及び前記電気的バイアスは、前記基板の上のレイヤの選択的な局所的な堆積のために構成される、請求項1に記載の処理装置。
- 前記処理媒体及び前記電気的バイアスは、制御された方向付けを有するカーボン・ナノチューブ(CNT)の堆積のために構成される、請求項1又は請求項8に記載の処理装置。
- 電界処理の方法であって、
電界処理装置を提供するステップであり、前記電界処理装置は、基板と電界による影響を受ける誘電特性を有する処理媒体とを受容するように構成された処理チャンバ、少なくとも1つの電界アプリケータ、及び前記少なくとも1つの電界アプリケータに電気的バイアスを結合する分布結合ユニットを含む、提供するステップと、
処理すべき基板を前記処理チャンバ内で支持するステップと、
前記処理チャンバの中に処理媒体を導入するステップと、
前記少なくとも1つの電界アプリケータに非一様の時間変化する電気的バイアスを印加して電界を生成して、基板の付近において、若しくは基板の表面において、又は双方において前記処理媒体への双極性効果を与える、印加するステップと、
前記双極性効果を与えられた処理媒体を用いて前記基板を処理するステップと、
を含む、方法。 - 前記基板を処理するステップは、前記基板の上に1つ又は複数のレイヤを構築するステップを含む、請求項10に記載の方法。
- フィラメント支援化学気相堆積(FACVD)、開始化学気相堆積(iCVD)、又は双方を用いて前記基板の上にレイヤを堆積させ、又はレイヤを改質させるステップ
をさらに含む、請求項10に記載の方法。 - 前記処理媒体及び前記電気的バイアスは、前記基板を第2の基板へ接着するために前記基板の上に少なくとも1つのレイヤを整えるように選択されるか、前記基板の上に、制御された方向付けを有するカーボン・ナノチューブ(CNT)を堆積させるように選択されるか、あるいは前記基板の上の堆積レイヤの構造若しくは方向付け又は双方に影響を与えるように選択されるかのいずれかである、請求項10又は請求項11に記載の方法。
- 前記処理媒体は浮遊する粒子を含むように選択され、前記時間変化する電気的バイアスは前記処理媒体の中の浮遊する粒子の運動に影響を与える電界を生成するように選択される、請求項10に記載の方法。
- 浮遊する粒子の前記運動は、前記処理媒体のバルク運動を誘導するか、種々の特性の浮遊する粒子を前記処理媒体の中の種々の経路を進ませ、それにより前記浮遊する粒子を分類することになるか、あるいは双方かである、請求項14に記載の方法。
- 前記浮遊する粒子は、生物由来物質であり、浮遊する粒子の前記運動は、前記基板の上の所定位置において浮遊する粒子を堆積させるように、静的な、又は時間変化する電気的バイアスを適用することによって制御される、請求項14又は請求項15に記載の方法。
- 前記基板は半導体ウェハーであり、前記処理するステップは、前記半導体ウェハーの上の材料をエッチングするステップ、若しくは前記半導体ウェハーの上に膜を堆積させるステップ、又は双方を含む、請求項10に記載の方法。
- 前記処理媒体は、気体、液体、荷電粒子、又は中性の誘電性の粒子のうち1つ又は複数から作成される、請求項10又は請求項14に記載の方法。
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