JP6107849B2 - 光電変換素子評価装置 - Google Patents
光電変換素子評価装置 Download PDFInfo
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- JP6107849B2 JP6107849B2 JP2015033956A JP2015033956A JP6107849B2 JP 6107849 B2 JP6107849 B2 JP 6107849B2 JP 2015033956 A JP2015033956 A JP 2015033956A JP 2015033956 A JP2015033956 A JP 2015033956A JP 6107849 B2 JP6107849 B2 JP 6107849B2
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- 238000006243 chemical reaction Methods 0.000 title claims description 54
- 238000011156 evaluation Methods 0.000 title claims description 29
- 239000000523 sample Substances 0.000 claims description 40
- 230000001678 irradiating effect Effects 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 238000012545 processing Methods 0.000 claims description 10
- 230000007704 transition Effects 0.000 claims description 7
- 238000005259 measurement Methods 0.000 description 23
- 238000000034 method Methods 0.000 description 14
- 238000004364 calculation method Methods 0.000 description 13
- 239000000969 carrier Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 12
- 238000013075 data extraction Methods 0.000 description 8
- 238000013500 data storage Methods 0.000 description 7
- 238000000137 annealing Methods 0.000 description 6
- 230000002950 deficient Effects 0.000 description 6
- 238000010606 normalization Methods 0.000 description 6
- 238000010924 continuous production Methods 0.000 description 5
- 230000008034 disappearance Effects 0.000 description 5
- 230000000875 corresponding effect Effects 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 239000000284 extract Substances 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S50/00—Monitoring or testing of PV systems, e.g. load balancing or fault identification
- H02S50/10—Testing of PV devices, e.g. of PV modules or single PV cells
- H02S50/15—Testing of PV devices, e.g. of PV modules or single PV cells using optical means, e.g. using electroluminescence
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/1717—Systems in which incident light is modified in accordance with the properties of the material investigated with a modulation of one or more physical properties of the sample during the optical investigation, e.g. electro-reflectance
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S50/00—Monitoring or testing of PV systems, e.g. load balancing or fault identification
- H02S50/10—Testing of PV devices, e.g. of PV modules or single PV cells
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/1717—Systems in which incident light is modified in accordance with the properties of the material investigated with a modulation of one or more physical properties of the sample during the optical investigation, e.g. electro-reflectance
- G01N2021/1719—Carrier modulation in semiconductors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/1717—Systems in which incident light is modified in accordance with the properties of the material investigated with a modulation of one or more physical properties of the sample during the optical investigation, e.g. electro-reflectance
- G01N2021/1725—Modulation of properties by light, e.g. photoreflectance
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- General Health & Medical Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Photovoltaic Devices (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- General Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Power Engineering (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Description
Rsh=−ΔVoc/ΔIoc
Rs=−ΔVsc/ΔIsc
PCE=Pmax/(E・A)
非接触により光電変換素子の評価を行う光電変換素子評価装置であって、
測定対象である光電変換素子にプローブ光を照射するプローブ光源と、
プローブ光が照射されている前記光電変換素子にパルス状のポンプ光を照射するポンプ光源と、
前記光電変換素子に照射される前記プローブ光の前記光電変換素子の照射面上における光量変化をリアルタイムで検出して前記プローブ光の光量変化の時間依存性を求める受光素子と、
前記光電変換素子の膜厚の値をパラメータとして前記ポンプ光の照射に伴うキャリア量の時間推移に基づき前記光電変換素子の特性評価判断を行うデータ処理部、
とで構成されていることを特徴とする。
前記光電変換素子は、ロール・ツー・ロールにより連続生産される生産ライン段階の光電変換素子であることを特徴とする。
前記プローブ光は、前記ポンプ光の照射期間およびその前後を含むパルス幅を有することを特徴とする。
前記光電変換素子にプローブ光を連続照射しながらパルス状のポンプ光を照射することにより検出されるある時点における変化量と、一定時間経過後に検出される変化量の比と差のいずれかを判定基準として、光電変換効率最大値と素子内電流リークの状況判断の少なくともいずれかを推定することを特徴とする。
6 ポンプ光源
7 プローブ光源
8 光検出器
9 信号処理部
9a 波形取得部
9b データ抽出部
9c 膜厚データ記憶部
9d 規格化演算部
9e 基準設定部
9f データ判定部
9g 判定出力部
Claims (4)
- 非接触により光電変換素子の評価を行う光電変換素子評価装置であって、
測定対象である光電変換素子にプローブ光を照射するプローブ光源と、
プローブ光が照射されている前記光電変換素子にパルス状のポンプ光を照射するポンプ光源と、
前記光電変換素子に照射される前記プローブ光の前記光電変換素子の照射面上における光量変化をリアルタイムで検出して前記プローブ光の光量変化の時間依存性を求める受光素子と、
前記光電変換素子の膜厚の値をパラメータとして前記ポンプ光の照射に伴うキャリア量の時間推移に基づき前記光電変換素子の特性評価判断を行うデータ処理部、
とで構成されていることを特徴とする光電変換素子評価装置。 - 前記光電変換素子は、ロール・ツー・ロールにより連続生産される生産ライン段階のものであることを特徴とする請求項1記載の光電変換素子評価装置。
- 前記プローブ光は、前記ポンプ光の照射期間およびその前後を含むパルス幅を有することを特徴とする請求項1または請求項2記載の光電変換素子評価装置。
- 前記光電変換素子にプローブ光を連続照射しながらパルス状のポンプ光を照射することにより検出されるある時点における変化量と、一定時間経過後に検出される変化量の比と差のいずれかを判定基準として、光電変換効率最大値と素子内電流リークの状況判断の少なくともいずれかを推定することを特徴とする請求項1から請求項3のいずれかに記載の光電変換素子評価装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015033956A JP6107849B2 (ja) | 2015-02-24 | 2015-02-24 | 光電変換素子評価装置 |
EP15203096.1A EP3062083A1 (en) | 2015-02-24 | 2015-12-30 | Photoelectric conversion element evaluation apparatus |
KR1020160001022A KR101757104B1 (ko) | 2015-02-24 | 2016-01-05 | 광전 변환 소자 평가 장치 |
US14/992,492 US10298174B2 (en) | 2015-02-24 | 2016-01-11 | Photoelectric conversion element evaluation apparatus |
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JP2015033956A JP6107849B2 (ja) | 2015-02-24 | 2015-02-24 | 光電変換素子評価装置 |
Publications (2)
Publication Number | Publication Date |
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JP2016157780A JP2016157780A (ja) | 2016-09-01 |
JP6107849B2 true JP6107849B2 (ja) | 2017-04-05 |
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JP2015033956A Active JP6107849B2 (ja) | 2015-02-24 | 2015-02-24 | 光電変換素子評価装置 |
Country Status (4)
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US (1) | US10298174B2 (ja) |
EP (1) | EP3062083A1 (ja) |
JP (1) | JP6107849B2 (ja) |
KR (1) | KR101757104B1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7000197B2 (ja) | 2018-02-16 | 2022-01-19 | 浜松ホトニクス株式会社 | 濃度測定方法及び濃度測定装置 |
JP7000198B2 (ja) | 2018-02-16 | 2022-01-19 | 浜松ホトニクス株式会社 | キャリア寿命測定方法及びキャリア寿命測定装置 |
WO2019213182A1 (en) * | 2018-04-30 | 2019-11-07 | Alliance For Sustainable Energy, Llc | Microwave photoconductance spectrometer and methods of using the same |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
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US4211488A (en) * | 1978-10-03 | 1980-07-08 | Rca Corporation | Optical testing of a semiconductor |
JPH0864652A (ja) | 1994-08-26 | 1996-03-08 | Hitachi Cable Ltd | エピタキシャルウェハの検査方法 |
JP2004311580A (ja) * | 2003-04-03 | 2004-11-04 | Toshiba Corp | 半導体評価装置及び半導体評価方法 |
JP5086520B2 (ja) * | 2004-07-15 | 2012-11-28 | パナソニック株式会社 | 光電変換素子モジュール |
JP5743644B2 (ja) * | 2011-03-30 | 2015-07-01 | 株式会社Screenホールディングス | 基板検査装置および基板検査方法 |
JP5892597B2 (ja) * | 2012-02-24 | 2016-03-23 | 株式会社Screenホールディングス | 検査装置および検査方法 |
US8896338B2 (en) * | 2012-03-29 | 2014-11-25 | Emil Kamieniecki | Electrical characterization of semiconductor materials |
JP6044893B2 (ja) * | 2013-03-08 | 2016-12-14 | 株式会社Screenホールディングス | 検査装置および検査方法 |
JP5871141B2 (ja) * | 2013-10-11 | 2016-03-01 | 横河電機株式会社 | 光電変換素子評価装置 |
-
2015
- 2015-02-24 JP JP2015033956A patent/JP6107849B2/ja active Active
- 2015-12-30 EP EP15203096.1A patent/EP3062083A1/en not_active Withdrawn
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2016
- 2016-01-05 KR KR1020160001022A patent/KR101757104B1/ko active IP Right Grant
- 2016-01-11 US US14/992,492 patent/US10298174B2/en active Active
Also Published As
Publication number | Publication date |
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EP3062083A1 (en) | 2016-08-31 |
JP2016157780A (ja) | 2016-09-01 |
US10298174B2 (en) | 2019-05-21 |
KR101757104B1 (ko) | 2017-07-11 |
KR20160103503A (ko) | 2016-09-01 |
US20160248375A1 (en) | 2016-08-25 |
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