JP6107731B2 - Deposition equipment - Google Patents

Description

  The present invention relates to a film forming apparatus for forming a film on the surface of a work material having conductivity, such as steel, using plasma.

2. Description of the Related Art Conventionally, various film forming apparatuses for forming a film on the surface of a work material having conductivity such as steel using plasma have been proposed.
For example, a technique for forming a diamond-like carbon (hereinafter referred to as “DLC”) film on the surface of the above-described material to be processed is known from Japanese Patent Application Laid-Open No. 2004-47207.

In the technique disclosed in Patent Document 1, a plasma generator supplies a microwave toward a material to be processed in a processing container through a quartz window that is a microwave supply port. Is generated. The material to be processed is, for example, a rod, and is disposed so as to protrude from the inner surface of the quartz window into the processing container, and a sheath layer is generated in the peripheral portion of the inner surface of the quartz window of the processed material covered with the generated plasma. . Subsequently, during the supply of the microwave, the plasma generation device applies a negative bias voltage to the workpiece material.
As a result, the sheath layer generated on the surface of the work material expands along the surface of the work material. At the same time, the supplied microwave propagates as a surface wave of high energy density along the expanded sheath layer. At this time, plasma is also generated on the surface of the material to be processed away from the periphery of the inner surface of the quartz window by the surface wave of high energy density, and a sheath layer is also generated. The newly generated sheath layer is also enlarged by the negative bias voltage, and the microwave further propagates along the enlarged sheath layer as a high energy density surface wave. As a result, the plasma extends to a portion of the workpiece material away from the periphery of the quartz window, that is, from one end of the workpiece material on the quartz window side to the other end protruding into the processing container. As a result, the source gas is plasma-excited by surface waves to become high-density plasma, and a DLC film formation process is performed on the entire surface of the material to be processed.

JP 2004-47207 A

  However, in the film forming apparatus described in Patent Document 1, a negative voltage application terminal member that applies a negative voltage to the work material from a bias power source is connected to the upper end of the work material. In such a configuration, film formation is not performed on the upper end of the work material to which the negative voltage application terminal member is connected.

  Here, for example, a work material that needs to form a region including the upper end, such as various tools, can be considered. In the film forming apparatus described in Patent Document 1, since the negative voltage application terminal member for applying a negative voltage to the material to be processed is connected to the end of the material to be processed, it is impossible to form a region including the upper end. There is.

  The present invention has been made to solve the above-described problems in the prior art, and includes a region including an end portion that is not supported by a support portion of a work material to which a negative bias voltage is applied by a negative voltage application terminal member. An object of the present invention is to provide a film forming apparatus capable of forming a film.

In order to achieve the above object, a film forming apparatus according to claim 1 generates a plasma along a processing surface of a material to be processed having a gas supply unit that supplies a raw material gas and an inert gas to a processing container, and a conductive material. Supplied from the microwave supply unit, a microwave supply unit for supplying a microwave for applying, a negative voltage application unit for applying a negative bias voltage for enlarging the sheath layer along the processing surface of the material to be processed, and the microwave supply unit A microwave supply port for propagating microwaves to the expanded sheath layer; a support portion for supporting the work material with respect to the microwave supply port; and It comprises a negative voltage application terminal member for applying a negative bias voltage from the voltage applying unit, wherein the microwave supply port has a recess wall surface of the concave, wherein the material to be processed is inserted, the supporting part By the side surface of the concave wall surface, said supporting the end of the processed material, the negative voltage application terminal member is disposed at a bottom of the concave wall surface of the supporting portion, characterized in Rukoto.

A film forming apparatus according to a second aspect is the film forming apparatus according to the first aspect, further comprising a bias applying line that connects the negative voltage applying unit and the negative voltage applying terminal member, and the bias applying line includes the negative applying line. wherein the voltage applying terminal members surface wave control unit which reflects or absorbs the microwaves propagating along the sheath layer when connected are found provided on the supporting part.

According to a third aspect of the present invention, there is provided a film forming apparatus including: a gas supply unit that supplies a raw material gas and an inert gas to a processing container; and a microwave for generating plasma along a processing surface of a conductive material to be processed. A microwave supply unit for supplying, a negative voltage application unit for applying a negative bias voltage for expanding a sheath layer along the processing surface of the workpiece material, and a microwave supplied from the microwave supply unit were expanded A microwave supply port that propagates to the sheath layer; a support portion that supports the workpiece material with respect to the microwave supply port; and the support portion, wherein the workpiece material is negatively fed from the negative voltage application portion. A negative voltage application terminal member for applying the bias voltage, and a bias application line for connecting the negative voltage application unit and the negative voltage application terminal member, the bias application line including the negative voltage Pressurizing pin member and said surface wave control unit which reflects or absorbs the microwaves propagating along said sheath layer is provided, et al are that when connected to the support portion.

In the film forming apparatus according to claim 1, a support portion that supports the workpiece material is provided in the microwave supply port, and is connected to the support portion to apply a negative bias voltage from the negative voltage application portion to the workpiece material. Since the negative voltage application terminal member is provided, the negative bias voltage is applied to the material to be processed through a support portion that supports the material to be processed. That is, the negative voltage application terminal member does not have a contact in the film forming region other than the region supported by the support part with respect to the work material. Therefore, it is possible to form a region including an end other than the region supported by the support portion of the work material. Further, the work material is supported in contact with the side surface of the concave wall surface. Therefore, the material to be processed on the bottom side from the contact position is not formed. That is, since the negative voltage application terminal member is arranged on the bottom surface from the contact position where the material to be processed is not formed, the area where the material is not formed can be reduced.

In the film forming apparatus according to the second aspect, the negative voltage application unit and the negative voltage application terminal member are connected, and the surface wave control unit is provided on the bias application line. During the supply of the microwave by the microwave supply unit, the microwave propagating in the sheath layer along the surface of the bias application line is reflected by the surface wave control member, and the microwave propagates along the bias application line. This can be suppressed. Further, since the reflected microwave is returned to the workpiece material side, the workpiece material can be processed efficiently.

In the film forming apparatus according to claim 3, a support portion that supports the workpiece material is provided in the microwave supply port, and is connected to the support portion to apply a negative bias voltage from the negative voltage application portion to the workpiece material. Since the negative voltage application terminal member is provided, the negative bias voltage is applied to the material to be processed through a support portion that supports the material to be processed. That is, the negative voltage application terminal member does not have a contact in the film forming region other than the region supported by the support part with respect to the work material. Therefore, it is possible to form a region including an end other than the region supported by the support portion of the work material. Further, the negative voltage application unit and the negative voltage application terminal member are connected, and a surface wave control unit is provided on the bias application line. During the supply of the microwave by the microwave supply unit, the microwave propagating in the sheath layer along the surface of the bias application line is reflected by the surface wave control member, and the microwave propagates along the bias application line. This can be suppressed. Further, since the reflected microwave is returned to the workpiece material side, the workpiece material can be processed efficiently.

It is explanatory drawing which shows schematic structure of the film-forming apparatus which concerns on 1st Embodiment. It is explanatory drawing which expands and shows the connection structure of the negative voltage application terminal member in the film-forming apparatus which concerns on 1st Embodiment. It is explanatory drawing which expands and shows the connection structure of the negative voltage application terminal member in the film-forming apparatus which concerns on 2nd Embodiment. It is explanatory drawing which expands and shows the connection structure of the negative voltage application terminal member in the film-forming apparatus which concerns on 3rd Embodiment. It is explanatory drawing which expands and shows the connection structure of the negative voltage application terminal member in the film-forming apparatus which concerns on 4th Embodiment. It is a graph which shows the relationship between the variation width of the film thickness of the film | membrane formed in the film-forming apparatus which concerns on 1st Embodiment, and the pulse width of a microwave. It is explanatory drawing which expands and shows the connection structure of the negative voltage application terminal member in the film-forming apparatus which concerns on 5th Embodiment. It is explanatory drawing which expands and shows the connection structure of the negative voltage application terminal member in the film-forming apparatus which concerns on 6th Embodiment. It is explanatory drawing which expands and shows the connection structure of the negative voltage application terminal member in the film-forming apparatus which concerns on 7th Embodiment. It is explanatory drawing which expands and shows the connection structure of the negative voltage application terminal member in the film-forming apparatus which concerns on 8th Embodiment. It is explanatory drawing which expands and shows the connection structure of the negative voltage application terminal member in the film-forming apparatus which concerns on 9th Embodiment. It is a principal part notch perspective view which expands and shows the connection structure of the negative voltage application terminal member in the film-forming apparatus which concerns on 10th Embodiment. It is a schematic cross section of the connection structure of the negative voltage application terminal member shown in FIG. In the film-forming apparatus which concerns on 11th Embodiment, it is a principal part notch perspective view which shows the example which utilizes the member for fixing and supporting the holding member of a workpiece material as a negative voltage application terminal member. It is explanatory drawing which shows the operation | movement which fixes and supports a holding member using the member for fixing and supporting the holding member of a workpiece material as a negative voltage application terminal member.

  Hereinafter, a film forming apparatus according to the present invention will be described in detail with reference to the drawings based on the first to twelfth embodiments embodying the present invention. First, a schematic configuration of the film forming apparatus 1 according to the first embodiment will be described with reference to FIGS. 1 and 2.

  As shown in FIG. 1, the film forming apparatus 1 according to the present embodiment includes a processing vessel 2, a vacuum pump 3, a gas supply unit 5, a control unit 6, and the like. The processing container 2 is made of metal such as stainless steel and has a hermetic structure. The vacuum pump 3 is a pump capable of evacuating the inside of the processing container 2 via the pressure adjustment valve 7. Inside the processing container 2, a conductive material 8 to be deposited is held by a conductive holder 9 made of stainless steel or the like.

  The material of the work material 8 is not particularly limited as long as the surface has conductivity, but in the present embodiment, it is a low-temperature tempered steel. Here, the low temperature tempered steel is a material such as JIS G4051 (carbon steel material for machine structure), G4401 (carbon tool steel material), G44-4 (steel material for alloy tool), or maraging steel material. In addition to the low-temperature tempered steel, the work material 8 may be ceramic or resin in which a conductive material is coated.

  The gas supply unit 5 supplies a film forming source gas and an inert gas into the processing container 2. Specifically, an inert gas such as He, Ne, Ar, Kr, or Xe and a source gas such as CH4, C2H2, or TMS (tetramethylsilane) are supplied. In the present embodiment, the DLC film forming process is performed on the workpiece 8 using CH4 and TMS source gases.

  The flow rate and pressure of the raw material gas and the inert gas supplied from the gas supply unit 5 may be controlled by the control unit 6 or may be controlled by an operator. The source gas may be a gas containing a compound having a CH bond such as alkyne, alkene, alkane, aromatic compound, or a compound containing carbon. H2 may be included in the source gas.

  Plasma for performing the DLC film forming process on the material 8 to be processed held inside the processing container 2 is generated. This plasma is generated by the microwave pulse controller 11, the microwave oscillator 12, the microwave power source 13, the negative voltage power source 15, and the negative voltage pulse generator 16. In the present embodiment, surface wave excitation plasma is generated by a method disclosed in JP 2004-47207 A (hereinafter referred to as “MVP method (Microwave shear-Voltage combination Plasma method)”). In the following description, the MVP method will be described.

  The microwave pulse control unit 11 oscillates a pulse signal in accordance with an instruction from the control unit 6 and supplies the oscillated pulse signal to the microwave oscillator 12. The microwave oscillator 12 generates a microwave pulse according to the pulse signal from the microwave pulse controller 11. The microwave power source 13 supplies power to the microwave oscillator 12 that oscillates a microwave of 2.45 GHz with the instructed output in accordance with an instruction of the control unit 6. That is, the microwave oscillator 12 supplies a 2.45 GHz microwave to the isolator 17 described later as a pulsed microwave pulse according to the pulse signal from the microwave pulse control unit 11.

  The microwave pulse is transmitted from the microwave oscillator 12 to an isolator 17, a tuner 18, a waveguide 19, a coaxial waveguide 21 protruding from the waveguide 19 via a coaxial waveguide converter (not shown), and It is supplied to the processing surface of the holder 9 and the work material 8 through a microwave supply port 22 made of a dielectric material or the like that transmits microwaves such as quartz. The isolator 17 prevents the reflected wave of the microwave from returning to the microwave oscillator 12. The tuner 18 matches the impedances before and after the tuner 18 so that the reflected wave of the microwave is minimized.

  As shown in FIG. 2, a projecting portion 22 </ b> A that projects toward the holder 9 is provided in the central region in the left-right direction of the microwave supply port 22 formed in a multistage shape. A support recess 22B that supports the lower end of the holder 9 is formed at the center of the protrusion 22A. The lower end of the holder 9 is fitted into the support recess 22B. As a result, the inner side of the support recess 22 </ b> B and the upper end surface 22 </ b> C of the protrusion 22 </ b> A is covered with the conductive holder 9. In addition, the outer side of the upper end surface 22C of the protruding portion 22A and the side surface of the protruding portion 22A are open, and the open portion of the side surface becomes the first microwave transmitting portion 22D.

  Further, a portion extending in the left-right direction from the lower end of the first microwave transmitting portion 22D is also opened, and this portion becomes the second microwave transmitting portion 22E. The second microwave transmitting portion 22E is not covered with any of the conductive holder 9 and the side conductor 23 (described later).

  Therefore, the microwave supplied from the microwave supply port 22 is between the outer portion of the upper end surface 22C, the first microwave transmitting portion 22D and the second microwave transmitting portion 22E and the surrounding wall portion 23C (described later). It is supplied along the processing surface of the work material 8 and the holder 9 through the surrounding space 20. A negative bias voltage is applied to the work material 8 and the holder 9. Thereby, the microwave propagates as a surface wave along the interface between the sheath layer and the plasma, and high-density excitation plasma based on the surface wave is generated along the surfaces of the workpiece 8 and the holder 9.

  The upper end surface 22C of the microwave supply port 22 is an introduction surface for the supplied microwave. Since the microwave is transmitted through the outer portion of the upper end surface 22C of the microwave supply port 22, the first microwave transmission unit 22D, and the second microwave transmission unit 22E, the microwave is transmitted through the microwave supply port 22. The area can be enlarged.

  Here, since the microwave supply port 22 is formed in a multi-stage shape, it is possible to easily adopt a structure that cancels the reflection of the microwave from the tip portion of the protruding portion 22A covered with the holder 9.

Further, as shown in FIG. 2, a conductive flange member 23A is disposed in contact with the outer periphery of the microwave supply port 22 below, and a conductive surrounding wall member 23B is disposed above the flange member 23A. Arranged in contact. The flange member 23A and the surrounding wall member 23B serve as side conductors 23 that cover the outer peripheral surface excluding the upper end surface 22C of the microwave supply port 22, the first microwave transmission portion 22D, and the second microwave transmission portion 22E. Function. Therefore, the microwave is not supplied from a portion other than the outer side of the upper end surface 22C of the microwave supply port 22, the first microwave transmission unit 22D, and the second microwave transmission unit 22E, and the microwave supply port 22 is not supplied. Is transmitted from the outer side of the upper end face 22C, the first microwave transmitting part 22D and the second microwave transmitting part 22E to the sheath layer.
Here, both the flange member 23A and the surrounding wall member 23B are formed of a metal such as stainless steel.
The flange member 23A constituting the side conductor 23 is fixed to the inner surface of the processing container 2 by screws or the like and is electrically connected to the processing container 2. The surrounding wall member 23B is flanged by an appropriate method. Fixed to the member 23A. A central conductor of the coaxial waveguide 21 is extended at the center of the microwave supply port 22.

  As shown in FIG. 2, a cylindrical surrounding wall portion 23C formed so as to surround the first microwave transmitting portion 22D is formed at the center portion of the surrounding wall member 23B fixedly disposed on the flange member 23A. Yes. The surrounding wall portion 23 </ b> C surrounds the first microwave transmitting portion 22 </ b> D and a part of the holder 9 while maintaining a predetermined interval with the first microwave transmitting portion 22 </ b> D. The surrounding wall portion 23C is formed of a metal such as stainless steel. Thereby, between the inner peripheral surface of the surrounding wall portion 23C and the outer peripheral surface of the holder 9 and the first microwave transmitting portion 22D, as shown in FIG. Is formed.

  As described above, in the microwave supply port 22, the outer portion of the upper end surface 22 </ b> C and the remaining outer peripheral surface excluding the first microwave transmitting portion 22 </ b> D and the second microwave transmitting portion 22 </ b> E are made of the conductive holder 9 and the flange. It is covered with a side conductor 23 composed of a member 23A and a surrounding wall member 23B. For this reason, the pulsed microwave supplied from the microwave supply port 22 is radiated to the outside of the upper end surface 22C, the vicinity of the first microwave transmitting portion 22D, and the second microwave transmitting portion 22E. As a result, plasma is generated along the enclosed space 20 and the processing surface of the workpiece 8.

  As shown in FIG. 2, an electrode connection recess 9 </ b> A is formed on the upper peripheral surface of the holder 9 for the workpiece 8, and the electrode connection recess 9 </ b> A is connected to the negative voltage pulse generator 16. In addition, a negative voltage application terminal member 25 provided at an end of the bias application line 30 extended into the processing container 2 is electrically connected. A negative bias voltage pulse is applied to the holder 9 via a bias application line 30.

  In order to maintain a vacuum between the central conductor 21A of the microwave supply port 22 and the holder 9, a dielectric such as quartz is disposed therebetween. The workpiece material 8 has, for example, a rod shape, and is held on an extension line of the central conductor of the microwave supply port 22.

  The negative voltage power supply 15 supplies a negative bias voltage to the negative voltage pulse generator 16 in accordance with an instruction from the controller 6. The negative voltage pulse generator 16 pulses the negative bias voltage supplied from the negative voltage power supply 15. This pulsing process is a process in which the negative voltage pulse generator 16 controls the magnitude, cycle, and duty ratio of the negative bias voltage pulse in accordance with an instruction from the controller 6. The pulsed negative bias voltage is applied via the holder 9 to the workpiece 8 held in the holder 9 in the processing container 2 via the bias application line 30 and the negative voltage application terminal member 25. Is done.

  Here, the length (height) of the first microwave transmission part 22D is set to 2 mm or more, and the distance between the first microwave transmission part 22D and the inner peripheral surface of the surrounding wall part 23C is 2 mm or less. The height of the surrounding wall portion 23C is set to 20 mm or more. Moreover, the height of the surrounding wall part 23C is formed higher than the height of the protruding part 22A, as shown in FIGS.

  That is, even when the workpiece 8 is a metal substrate, or when a ceramic or resin is coated with a conductive material, a negative bias voltage pulse is applied to at least the entire processing surface of the workpiece 8. Applied.

The negative voltage power supply 15 and the negative voltage pulse generator 16 are examples of the negative voltage application unit of the present invention. Moreover, the microwave pulse control part 11, the microwave oscillator 12, the microwave power supply 13, the isolator 17, the tuner 18, the waveguide 19, and the coaxial waveguide 21 are examples of the microwave supply part of this invention.
The film forming apparatus 1 includes the negative voltage power supply 15 and the negative voltage pulse generation unit 16, but may further include a positive voltage power supply and a positive voltage pulse generation unit, or instead of the negative voltage pulse generation unit 16. A negative voltage generator that applies a continuous negative bias voltage instead of the pulsed negative bias voltage may be provided.

  The control unit 6 includes a pressure adjustment valve 7, an air release valve 10, a vacuum gauge 26, a negative voltage power supply 15, a negative voltage pulse generation unit 16, a microwave pulse control unit 11, a gas supply unit 5, and a microwave power supply 13. Electrically connected.

  The control unit 6 outputs control signals to the negative voltage power supply 15 and the microwave power supply 13 to control the applied power of the microwave pulse and the applied voltage of the negative voltage pulse. The control unit 6 outputs a control signal to the negative voltage pulse generation unit 16 and the microwave pulse control unit 11 to thereby apply a pulsed negative bias voltage pulse application timing, supply voltage, duty ratio, and microwave oscillator 12. The supply timing, the duty ratio, and the supply power of the microwave pulse generated from the above are controlled.

  The control unit 6 outputs a flow rate control signal to the gas supply unit 5 to control the supply of the source gas and the inert gas. The control unit 6 outputs a control signal to the pressure adjustment valve 7 based on a pressure signal representing a pressure in the processing container 2 input from a vacuum gauge 26 attached to the processing container 2. The pressure adjusting valve 7 to which the control signal is input controls the pressure in the processing container 2 by adjusting the valve opening based on the pressure signal included in the control signal.

  The control unit 6 outputs fully open and fully closed control signals to the atmosphere release valve 10. The air release valve 10 to which the fully open control signal is input fully opens the valve opening. The atmospheric release valve 10 to which the fully closed control signal is input makes the valve opening fully closed. When the atmosphere release valve 10 is fully opened, the internal pressure of the processing container 2 becomes the same as the external pressure via the atmosphere release valve 10.

[Description of surface wave excitation plasma]
Usually, when generating surface wave excitation plasma, a microwave is supplied along the interface between a plasma having a certain level of electron (ion) density and a dielectric in contact with the plasma. The supplied microwave is propagated as a surface wave with the energy of electromagnetic waves concentrated on this interface. As a result, the plasma in contact with the interface is excited by a high energy density surface wave and further amplified. Thereby, a high density plasma is generated and maintained. However, when this dielectric is replaced with a conductive material, the conductive material does not function as a surface wave waveguide, and preferable surface wave propagation and plasma excitation cannot occur.

  On the other hand, an essentially unipolar charged particle layer, a so-called sheath layer, is formed near the surface of an object in contact with plasma. In the case where the object is a work material 8 having conductivity to which a negative bias voltage is applied, the sheath layer is a layer having a low electron density, that is, positive polarity, and substantially has a relative dielectric constant in the microwave frequency band. It is a layer of ε≈1. For this reason, the sheath thickness of the sheath layer can be increased by making the absolute value of the negative bias voltage to be applied larger than the absolute value of, for example, −100V. That is, the sheath layer expands. This sheath layer acts as a dielectric that propagates surface waves to the interface between the plasma and the object in contact with the plasma.

  Accordingly, the microwave is supplied from the microwave supply port 22 disposed in the vicinity of one end of the holder 9 that holds the workpiece 8, and a negative bias voltage is applied to the workpiece 8 and the holder 9. Then, the microwave propagates as a surface wave along the interface between the sheath layer and the plasma. As a result, high-density excitation plasma based on surface waves is generated along the surfaces of the workpiece 8 and the holder 9. This high-density excitation plasma is a surface wave excitation plasma.

  The electron density of the high-density plasma due to surface wave excitation in the vicinity of the surface of the workpiece 8 reaches 1011 to 1012 cm-3. When the DLC film formation process is performed by plasma CVD using the MVP method, the film formation speed is 3 to 30 (nanometers / second), which is one to two orders of magnitude higher than the case where the DLC film formation process is performed by normal plasma CVD. Therefore, high-speed film formation is possible.

  As described above, the film forming apparatus 1 according to the first embodiment includes the holding tool 9 that holds the workpiece 8 and has conductivity, and holds the holding tool at the support recess 22 </ b> B of the microwave supply port 22. Since the workpiece 8 is supported by holding 9 and the negative voltage application terminal member 25 is connected to the holder 9, a region including the end of the workpiece 8 that does not contact the holder 9 is formed. can do.

Next, the connection structure of the negative voltage application terminal member 25 in the film forming apparatus 1 according to the second embodiment will be described with reference to FIG.
Here, the film forming apparatus according to the second embodiment basically has the same configuration as the film forming apparatus 1 according to the first embodiment described above, and therefore the film forming apparatus according to the second embodiment. Therefore, the description of the same configuration as the film forming apparatus of the first embodiment is omitted. In the following description, the same components as those in the film forming apparatus 1 of the first embodiment will be described with the same reference numerals, and the description will be made with a focus on the configuration unique to the film forming apparatus of the second embodiment. I decided to.

  In FIG. 3, an insertion gap 37 is formed between the conductive flange member 23 </ b> A and the surrounding wall member 23 </ b> B constituting the side conductor 23, and the microwave supply port 22 has a support recess from its outer peripheral surface. A first insertion hole 31 penetrating up to 22B is formed. The bias application line 30 is inserted into the insertion gap 37 and the first insertion hole 31 together with the negative voltage application terminal member 25 and is electrically connected to the lower end portion of the holder 9.

  In the connection structure of the negative voltage application terminal member 25 in the second embodiment, the bias application line 30 is not exposed to the outside inside the insertion gap 37 and the first insertion hole 31. It can protect and suppress deterioration. At this time, the bias application line 30 is insulated from the insertion gap 37.

Next, the connection structure of the negative voltage application terminal member 25 in the film forming apparatus 1 according to the third embodiment will be described with reference to FIG.
Here, the film forming apparatus according to the third embodiment basically has the same configuration as the film forming apparatus 1 according to the first embodiment described above, and therefore the film forming apparatus according to the third embodiment. Therefore, the description of the same configuration as the film forming apparatus of the first embodiment is omitted. In the following description, the same components as those in the film forming apparatus 1 of the first embodiment will be described with the same reference numerals, and the description will be made with a focus on the configuration unique to the film forming apparatus of the third embodiment. I decided to.

  In FIG. 4, the connection structure of the negative voltage application terminal member 25 in the film forming apparatus 1 of the third embodiment surrounds the conductive flange member 23 </ b> A constituting the side conductor 23 in the same manner as in the second embodiment. An insertion gap 37 is formed between the wall member 23B and a first insertion hole 31 penetrating from the outer peripheral surface to the support recess 22B is formed in the microwave supply port 22. The bias application wire 30 and the negative voltage application terminal member 25 are inserted into the insertion gap 37 and the first insertion hole 31 and are electrically connected to the lower end portion of the holder 9.

  The negative voltage application terminal member 25 provided at the tip of the bias application line 30 is arranged to extend to the bottom of the support recess 22 </ b> B of the microwave supply port 22.

  In the connection structure of the negative voltage application terminal member 25 in the third embodiment, since the negative voltage application terminal member 25 is arranged to extend to the bottom of the support recess 22B, the holder 9 is supported by the microwave supply port 22. By simply inserting and supporting the recess 22B, the negative voltage application terminal member 25, the holder 9, and the workpiece 8 can be reliably brought into contact and connected.

Next, the connection structure of the negative voltage application terminal member 25 in the film forming apparatus 1 according to the fourth embodiment will be described with reference to FIG.
Here, the film forming apparatus according to the fourth embodiment basically has the same configuration as the film forming apparatus 1 according to the first embodiment described above, and therefore the film forming apparatus according to the fourth embodiment. Therefore, the description of the same configuration as the film forming apparatus of the first embodiment is omitted. In the following description, the same components as those in the film forming apparatus 1 according to the first embodiment will be described with the same reference numerals, and the description will be made with a focus on the structure unique to the film forming apparatus according to the fourth embodiment. I decided to.

  In FIG. 5, a second insertion hole 33 is formed in the surrounding wall portion 23 </ b> C of the surrounding wall member 23 </ b> B constituting a part of the side conductor 23. The negative voltage application terminal member 25 is inserted into the second insertion hole 33 together with the bias application line 30, and the negative voltage application terminal member 25 is electrically connected to the lower end portion of the holder 9.

  In the connection structure of the negative voltage application terminal member 25 in the fourth embodiment, the negative voltage application terminal member 25 is inserted into the second insertion hole 33 formed in the enclosure wall portion 23C of the enclosure wall member 23B together with the bias application line 30. And is connected to the lower end of the holder 9, and the plasma density is low inside the surrounding wall portion 23C. Therefore, the bias applying line 30 is prevented from being deteriorated by plasma inside the surrounding wall portion 23C. can do. At this time, the bias application line 30 is insulated from the surrounding wall portion 23C. In other words, the bias application line 30 in the region in contact with the second insertion hole 33 may be covered with insulation.

  In the first to fourth embodiments, as described above, the negative voltage application terminal member 25 is connected to the holder 9, but the negative voltage application terminal member 25 in the first embodiment is used. As an example, an experiment was conducted in which the pulse width (supply time) of the microwave was changed in various ways to examine the degree of variation in the film thickness of the film formed on the surface of the workpiece 8.

The experimental results are shown in the graph of FIG. In this experiment, first, the pulse width of the microwave was sequentially selected from 80 μsec, 120 μsec, 160 μsec, and 240 μsec, and the film thickness distribution (%) in the microwave propagation direction of the film obtained at each pulse width was calculated. . This film thickness distribution in the microwave propagation direction is calculated by the following formula.
Microwave propagation direction film thickness distribution (%) = (film thickness at each position / average film thickness−1) × 100
In the group of microwave propagation direction film thickness distribution (%) values of each microwave pulse width calculated by the above formula, the value obtained by subtracting the minimum value (MIN) from the maximum value (MAX) is the microwave propagation direction. The film thickness variation width (%) was used.

  FIG. 6 is a graph illustrating the relationship between the microwave propagation direction film thickness variation width (%) obtained for each microwave pulse width and the microwave pulse width.

  In the graph of FIG. 6, the data of the thickness variation width in the microwave propagation direction obtained with the microwave pulse width of 1000 μs (1 ms) is the negative voltage application terminal member as in the conventional film forming apparatus. This is data obtained by forming a film by connecting 25 to the tip of the material 8 (the upper end of FIG. 1).

  The film thickness variation width of the coating film obtained by the conventional film forming apparatus is 10% or less in FIG. According to this, the film obtained by the connection structure of the negative voltage application terminal member in the first embodiment is approximately the same as the film obtained by the conventional film forming method having a good thickness variation width. If it is a variation width, it can be said that it is favorable as a film.

  In the graph of FIG. 6, it can be seen that the film thickness variation width of the film formed with the microwave pulse width of 80 μs is 5%, which is a very good film. The film thickness variation width of the film formed with a microwave pulse width of 120 μs is 14%, which exceeds 10%. Therefore, the film has a slightly large film thickness variation width. The variation width of the film formed with a microwave pulse width of 160 μs is 20%, which is twice as large as 10%. Therefore, the variation width of the film thickness exceeds the allowable range. The film thickness variation width of the film formed with a microwave pulse width of 240 μs is 28%, which is more than twice 10%, so the film thickness variation width is further beyond the allowable range.

  In addition, in the graph of FIG. 6, considering that the film thickness variation width of the film obtained by the conventional film formation method is 10%, the microwave pulse width at which the film thickness variation width is about 10% is It is about 100 microseconds. Therefore, when the connection structure for connecting the negative voltage application terminal member 25 to the holder 9 is employed as in the first embodiment, if the microwave pulse width is 100 μsec or less, the film thickness variation width is reduced. A good film can be formed on the work material 8 by controlling it to 10% or less.

Next, a connection structure of the negative voltage application terminal member 25 in the film forming apparatus 1 according to the fifth embodiment will be described with reference to FIG.
Here, the film forming apparatus according to the fifth embodiment basically has the same configuration as the film forming apparatus 1 according to the first embodiment described above, and therefore the film forming apparatus according to the fifth embodiment. Therefore, the description of the same configuration as the film forming apparatus of the first embodiment is omitted. In the following description, the same components as those in the film forming apparatus 1 of the first embodiment will be described with the same reference numerals, and the description will be made with a focus on the configuration unique to the film forming apparatus of the fifth embodiment. I decided to.

  In FIG. 7, an electrode connection recess 9A is formed on the upper peripheral surface of the holder 9 for the work material 8, and the electrode connection recess 9A is connected to the negative voltage pulse generator 16 and a processing container. The negative voltage application terminal member 25 provided at the end of the bias application line 30 extended to 2 is electrically connected.

  In addition, a reflector 34 is attached to the bias application line 30 in the vicinity of the electrode connection recess 9 </ b> A of the holder 9. The reflection plate 34 is attached to the bias application line 30 at a position that is further away than the distance from the axial center of the holder 9 to the inner peripheral surface of the surrounding wall portion 23C. For example, the reflecting plate 34 is made of a floating potential metal insulated from the bias application line by a dielectric.

  In the connection structure of the negative voltage application terminal member 25 in the fifth embodiment, since the reflection plate 34 is attached to the bias application line 30, it propagates as a surface wave along the bias application line 30 via the reflection plate 34. By reflecting the microwave, it is possible to suppress the propagation of the microwave along the bias application line 30.

Next, the connection structure of the negative voltage application terminal member 25 in the film forming apparatus 1 according to the sixth embodiment will be described with reference to FIG.
Here, the film forming apparatus according to the sixth embodiment basically has the same configuration as the film forming apparatus 1 according to the first embodiment described above, and therefore the film forming apparatus according to the sixth embodiment. Therefore, the description of the same configuration as the film forming apparatus of the first embodiment is omitted. In the following description, the same components as those in the film forming apparatus 1 of the first embodiment will be described with the same reference numerals, and the description will focus on the configuration unique to the film forming apparatus of the sixth embodiment. I decided to.

  In FIG. 8, a second insertion hole 33 is formed in the surrounding wall portion 23 </ b> C of the surrounding wall member 23 </ b> B constituting a part of the side conductor 23. The negative voltage application terminal member 25 is inserted into the second insertion hole 33 together with the bias application line 30, and the negative voltage application terminal member 25 is electrically connected to the lower end portion of the holder 9. In addition, a reflector 34 is attached to the bias applying line 30 at a position adjacent to the surrounding wall portion 23C outside the surrounding wall portion 23C.

  In the connection structure of the negative voltage application terminal member 25 in the sixth embodiment, the negative voltage application terminal member 25 is inserted into the second insertion hole 33 formed in the enclosure wall portion 23C of the enclosure wall member 23B together with the bias application line 30. And is connected to the lower end of the holder 9, and the plasma density is low inside the surrounding wall portion 23 </ b> C. Therefore, the bias application line 30 is plasma in the region between the surrounding wall portion 23 </ b> C and the holder 9. It can suppress that it degrades by.

Further, in the connection structure of the negative voltage application terminal member 25 in the sixth embodiment, since the reflection plate 34 is attached to the bias application line 30, as a surface wave along the bias application line 30 via the reflection plate 34. It is possible to reflect the propagating microwave and thereby suppress the propagation of the microwave along the bias application line 30.
Further, the reflecting plate 34 is attached to the bias applying line 30 at a position outside the surrounding wall portion 23 that is further away from the distance from the axial center of the holder 9 to the inner peripheral surface of the surrounding wall portion 23C. Suppressing the propagation of the microwave along the bias application line 30 by further reflecting the microwave through the reflector without inhibiting the propagation of the microwave propagating between the wall portion 23 </ b> C and the holder 9. can do.

Next, a connection structure of the negative voltage application terminal member 25 in the film forming apparatus 1 according to the seventh embodiment will be described with reference to FIG.
Here, the film forming apparatus according to the seventh embodiment has basically the same configuration as the film forming apparatus 1 according to the first embodiment described above, and therefore the film forming apparatus according to the seventh embodiment. Therefore, the description of the same configuration as the film forming apparatus of the first embodiment is omitted. In the following description, the same components as those in the film forming apparatus 1 of the first embodiment will be described with the same reference numerals, and the description will focus on the configuration unique to the film forming apparatus of the seventh embodiment. I decided to.

  In FIG. 9, the reflecting plate 34 is incorporated in a part of the surrounding wall portion 23 </ b> C corresponding to the insertion direction of the bias applying line 30. The negative voltage application terminal member 25 together with the bias application line 30 is inserted into the reflection plate 34 and is electrically connected to the lower end of the holder 9. For example, the reflector is made of a metal that is insulated from the bias application line and the surrounding wall by a dielectric.

  In the connection structure of the negative voltage application terminal member 25 in the seventh embodiment, the negative voltage application terminal member 25 is inserted together with the bias application line 30 into the reflecting plate 34 incorporated in the surrounding wall portion 23C of the surrounding wall member 23B. At the same time, it is connected to the lower end portion of the holder 9, and the plasma density is low inside the surrounding wall portion 23C. Therefore, it is possible to suppress the bias application line 30 from being deteriorated by plasma inside the surrounding wall portion 23C. Can do.

Further, in the connection structure of the negative voltage application terminal member 25 in the seventh embodiment, since the reflection plate 34 is attached to the surrounding wall portion 23C, the micro wave propagating along the bias application line 30 via the reflection plate 34. By reflecting the wave, it is possible to suppress the propagation of the microwave along the bias application line 30.
Furthermore, since the reflecting plate 34 is incorporated at a position equivalent to the distance from the axial center of the holder 9 to the inner peripheral surface of the surrounding wall portion 23C, the reflecting plate 34 reflects microwaves in a partial region of the surrounding wall portion 23C. In addition, the microwave can be further reflected through the reflecting plate, and the microwave can be prevented from propagating along the bias application line 30 as a surface wave.

Next, the connection structure of the negative voltage application terminal member 25 in the film forming apparatus 1 according to the eighth embodiment will be described with reference to FIG.
Here, the film forming apparatus according to the eighth embodiment has basically the same configuration as the film forming apparatus 1 according to the first embodiment described above, and therefore the film forming apparatus according to the eighth embodiment. Therefore, the description of the same configuration as the film forming apparatus of the first embodiment is omitted. In the following description, the same components as those in the film forming apparatus 1 of the first embodiment will be described with the same reference numerals, and the description will be made with a focus on the configuration unique to the film forming apparatus of the eighth embodiment. I decided to.

  In FIG. 10, an electrode connection recess 9A is formed on the upper peripheral surface of the holder 9 for the work material 8, and the electrode connection recess 9A is connected to the negative voltage pulse generator 16 and a processing container. The negative voltage application terminal member 25 provided at the end of the bias application line 30 extended to 2 is electrically connected. Further, in the vicinity of the electrode connection recess 9 </ b> A of the holder 9, the bias application line 30 is formed with a coil portion 35 in which the bias application line 30 is formed in a coil shape.

  In the connection structure of the negative voltage application terminal member 25 in the eighth embodiment, since the coil application coil 35 is formed in the bias application wire 30 in the vicinity of the electrode connection recess 9A of the holder 9, the high frequency It is possible to suppress the propagation of the microwave along the bias application line 30 by using the inductance of the coil portion 35 with respect to the above.

Next, a connection structure of the negative voltage application terminal member 25 in the film forming apparatus 1 according to the ninth embodiment will be described with reference to FIG.
Here, the film forming apparatus according to the ninth embodiment basically has the same configuration as the film forming apparatus 1 according to the first embodiment described above, and therefore, the film forming apparatus according to the ninth embodiment. Therefore, the description of the same configuration as the film forming apparatus of the first embodiment is omitted. In the following, the same components as those in the film forming apparatus 1 of the first embodiment will be described with the same reference numerals, and the description will be made with a focus on the structure unique to the film forming apparatus of the ninth embodiment. I decided to.

  In FIG. 11, an electrode connection recess 9A is formed on the upper peripheral surface of the holder 9 for the work material 8, and the electrode connection recess 9A is connected to the negative voltage pulse generator 16 and a processing container. The negative voltage application terminal member 25 provided at the end of the bias application line 30 extended to 2 is electrically connected. Further, in the vicinity of the electrode connection recess 9 </ b> A of the holder 9, the wide portion 36 is discontinuously provided in the bias application line 30.

  In the connection structure of the negative voltage application terminal member 25 in the ninth embodiment, the wide portion 36 is formed discontinuously on the bias application line 30, and accordingly, the bias application line 30 includes a wide portion 36 and a wide portion. The thin portion is formed discontinuously, and a part of the surface wave is reflected at each discontinuous portion of the wide portion 36 and the narrower portion. Therefore, since the reflection with respect to the microwave propagating as the surface wave in the direction along the bias application line 30 increases, the progression of the microwave along the bias application line 30 can be suppressed.

Subsequently, a connection structure of the negative voltage application terminal member 25 in the film forming apparatus 1 according to the tenth embodiment will be described with reference to FIGS. 12 and 13.
Here, the film forming apparatus according to the tenth embodiment basically has the same configuration as the film forming apparatus 1 according to the first embodiment described above, and therefore the film forming apparatus according to the tenth embodiment. Therefore, the description of the same configuration as the film forming apparatus of the first embodiment is omitted. In the following description, the same components as those in the film forming apparatus 1 of the first embodiment will be described with the same reference numerals, and the description will focus on the configuration unique to the film forming apparatus of the tenth embodiment. I decided to.

  12 and 13, an insertion gap 37 is formed between the conductive flange member 23 </ b> A and the surrounding wall member 23 </ b> B constituting the side conductor 23, and the insertion gap 37 is formed in the microwave supply port 22. The first insertion hole 31 is continuous. A rod-shaped conductive member 38 is inserted through the insertion gap 37 and the first insertion hole 31. A disc-shaped negative voltage application terminal member 25 is provided at one end of the conductive member 38 (the right end of FIGS. 12 and 13), and the other end of the conductive member (the left end of FIGS. 12 and 13). Part) is electrically connected to a bias applying line 30.

  Further, as shown in FIG. 13, the workpiece material 8 is directly fixed to the support recess 22 </ b> B of the microwave supply port 22. As a result, the work material 8 is in direct contact with and electrically connected to the negative voltage application terminal member 25.

In the connection structure of the negative voltage application terminal member 25 in the tenth embodiment, since the negative voltage application terminal member 25 is provided at the end of the rod-shaped conductive member 38, the negative voltage application terminal member 25 is easy to handle. It can be easily arranged on the bottom of the support recess 22B via a bar-shaped conductive member 38.
Further, the work material 8 and the negative voltage application terminal member 25 can be easily brought into direct contact with each other and electrically connected simply by fixing the work material 8 to the support recess 22 </ b> B of the microwave supply port 22. . Furthermore, the work material 8 can be supported by the support recess 22B of the microwave supply port 22 without requiring any other holder, and the negative voltage application terminal member disposed at the bottom of the support recess 22B. 25 can be brought into direct contact with each other and electrically connected.

Subsequently, a connection structure of the negative voltage application terminal member 25 in the film forming apparatus 1 according to the eleventh embodiment will be described with reference to FIGS. 14 and 15.
Here, the film forming apparatus according to the eleventh embodiment basically has the same configuration as the film forming apparatus 1 according to the first embodiment described above, and therefore the film forming apparatus according to the eleventh embodiment. Therefore, the description of the same configuration as the film forming apparatus of the first embodiment is omitted. In the following description, the same components as those in the film forming apparatus 1 of the first embodiment will be described with the same reference numerals, and the description will be made with a focus on the structure unique to the film forming apparatus of the eleventh embodiment. I decided to.

  In FIG. 14, in the connection structure of the negative voltage application terminal member 25 in the film forming apparatus 1 according to the eleventh embodiment, the holder 9 for holding the work material 8 is fixedly supported. The fork type fixing tool 39 shown in FIG. 14 and the hand chuck type fixing tool 40 shown in FIG. 14B are used.

  The fixing tool 39 shown in FIG. 14A is provided with a conductive operation stick 41, and the operation stick 41 includes an operation portion 41A and one end portion of the operation portion 41A (the right end portion in FIG. 14A). And an arcuate fitting portion 41B that is elastically fitted and fixed on the outer periphery of the holder 9. The other end (left end in FIG. 14A) of the operation unit 41A is connected to the bias application line 30.

  By using the fixture 39 as a negative voltage application terminal member, the negative voltage pulse generator 16 and the fitting portion 41B of the operation stick 41 are simply fitted and fixed on the outer periphery of the holder 9. The holder 9 can be easily electrically connected.

  In addition, the fixture 40 shown in FIG. 14B includes two conductive hand members 42B and 42B that are supported in a crossing manner at the rotation fulcrum 42A. One end portion of each hand member 42B is provided with a fitting end portion 42C to be fitted into the electrode connection recess 9A of the holder 9. The operation unit 42D of each hand member 42B is connected to the bias applying line 30.

  By using the above-described fixture 40 as a negative voltage application terminal member, the negative voltage pulse generator 16 can be connected to the electrode connection concave portion 9A of the holding tool 9 only by fitting the fitting end portion 42C of each hand member 42B. The holder 9 can be easily electrically connected, and the holder 9 can be stably supported.

  In order to electrically connect the negative voltage pulse generator 16 and the holder 9 via the fixture 39 shown in FIG. 14A, the fixture 39 is held by the holder 9 as shown in FIG. Then, the holder 9 is moved toward the support recess 22B of the microwave supply port 22, and the fitting portion 41B of the operation stick 41 in the rear fixture 39 after the lower end portion of the holder 9 is fixedly supported by the support recess 22B. The electrode connection recess 9A is fitted and fixed. As a result, the fitting portion 41B applies a downward force to the holder 9, and the negative voltage pulse generator 16 and the holder 9 are electrically connected, and the holder 9 can be stably supported. .

  The present invention is not limited to the above-described embodiments, and various improvements and modifications can be made without departing from the scope of the present invention.

DESCRIPTION OF SYMBOLS 1 Film-forming apparatus 2 Processing container 5 Gas supply part 6 Control part 8 Work material 9 Holder 9A Electrode connection recessed part 11 Microwave pulse control part 12 Microwave oscillator 15 Negative voltage power supply 16 Negative voltage pulse generation part 17 Isolator 18 Tuner 19 Waveguide 21 Coaxial waveguide 22 Microwave supply port 22A Protruding portion 22B Support recess 22C Upper end surface 22D First microwave transmitting portion 22E Second microwave transmitting portion 23 Side conductor 23A Flange member 23B Enclosing wall member 23C Enclosing wall portion 25 Negative voltage application terminal member 30 Bias application line 31 First insertion hole 32 Inclined surface 33 Second insertion hole 34 Reflector 35 Coil part 36 Wide part

Claims (3)

A gas supply unit for supplying a raw material gas and an inert gas to the processing container;
A microwave supply section for supplying microwaves for generating plasma along the processing surface of the conductive material to be processed;
A negative voltage application unit for applying a negative bias voltage for enlarging a sheath layer along the processing surface of the work material;
A microwave supply port for propagating the microwave supplied from the microwave supply unit to the expanded sheath layer;
A support portion for supporting the workpiece material with respect to the microwave supply port;
In the support portion, a negative voltage application terminal member that applies a negative bias voltage from the negative voltage application portion to the work material;
Equipped with a,
The microwave supply port has a concave concave wall surface into which the work material is inserted,
The support portion supports an end portion of the workpiece material by a side surface of the concave wall surface,
The negative voltage application terminal member film forming apparatus according to claim Rukoto located at the bottom of the concave wall surface of the support portion. A bias application line for connecting the negative voltage application unit and the negative voltage application terminal member;
The bias application line is provided with a surface wave control unit that reflects or absorbs a microwave propagating along the sheath layer when the negative voltage application terminal member is connected to the support unit. Item 2. The film forming apparatus according to Item 1 . A gas supply unit for supplying a raw material gas and an inert gas to the processing container;
A microwave supply section for supplying microwaves for generating plasma along the processing surface of the conductive material to be processed;
A negative voltage application unit for applying a negative bias voltage for enlarging a sheath layer along the processing surface of the work material;
A microwave supply port for propagating the microwave supplied from the microwave supply unit to the expanded sheath layer;
A support portion for supporting the workpiece material with respect to the microwave supply port;
In the support portion, a negative voltage application terminal member that applies a negative bias voltage from the negative voltage application portion to the work material;
A bias application line connecting the negative voltage application unit and the negative voltage application terminal member;
With
The bias application line is provided with a surface wave control unit that reflects or absorbs the microwave propagating along the sheath layer when the negative voltage application terminal member is connected to the support unit. Membrane device.

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