JP6256056B2 - Deposition equipment - Google Patents

Description

  The present invention relates to a film forming apparatus for forming a film on the surface of a work material having conductivity such as steel using plasma.

  Conventionally, a technique for forming a film on the surface of a work material having conductivity, such as a steel material, is known from Patent Document 1 or the like. In the technique disclosed in this patent document, plasma is generated in the peripheral region of the inner surface of the quartz window by supplying a microwave toward the material to be processed in the processing container through the quartz window, and the sheath layer is plasma. And the material to be processed. During the supply of the microwave, the plasma generator applies a negative bias voltage to the workpiece material. As a result, a sheath layer is generated along the surface of the workpiece material, and the generated sheath layer is expanded. The supplied microwave propagates along the sheath layer, and the plasma expands. As a result, the source gas is decomposed by the plasma, and the surface of the material to be processed is subjected to film formation.

JP 2004-47207 A

  In the technique disclosed in Patent Literature 1, there is a possibility that the particles of the source gas or the metal particles of the metal material arranged in the region exposed to the plasma are deposited on the exposed surface of the quartz window. The amount of microwaves transmitted through the quartz window to which these particles are attached decreases. When the amount of microwave transmission decreases, the amount of microwave supply to the material to be processed decreases, which may adversely affect the film formation process, such as the film formation speed, film quality, or plasma state becoming unstable.

  In order to reduce this adverse effect, it is conceivable to clean the particles deposited on the quartz window. However, this cleaning process has a problem of lowering productivity.

  The present invention has been made to solve the above-described problems, and an object thereof is to provide a film forming apparatus capable of improving productivity.

In order to achieve the above object, a film forming apparatus according to claim 1, a processing container in which a conductive material to be processed can be disposed, a gas supply unit that supplies gas to the inside of the processing container, A microwave supply unit that supplies a microwave for generating plasma along the processing surface of the workpiece material via a waveguide, and a negative that expands a sheath layer along the processing surface of the workpiece material A negative voltage application unit for applying a bias voltage to the workpiece material, a microwave supply port for propagating microwaves supplied from the microwave supply unit to the expanded sheath layer, and the workpiece material were supported. And a jig provided with a region having conductivity in a direction perpendicular to the surface direction of the microwave supply port, disposed in opposition to the central conductor of the waveguide through the microwave supply port. Fixed to the tool A flange that extends in the surface direction and covers at least a portion of the microwave introduction surface of the microwave supply port exposed inside the processing container in a state where the jig is disposed as the central conductor, The collar is made of a dielectric material. The film forming apparatus according to claim 2, wherein a processing container capable of disposing a conductive material to be processed therein, a gas supply unit that supplies gas to the inside of the processing container, and a processing surface of the processing material A microwave supply unit that supplies a microwave for generating plasma along the negative electrode, and a negative voltage application unit that applies a negative bias voltage to the workpiece material to expand a sheath layer along the processing surface of the workpiece material; The microwave supplied from the microwave supply unit is propagated to the expanded sheath layer, and the microwave supply port provided with a recess opening inside the processing container and the work material in a supported state A jig that can be disposed in the concave portion of the microwave supply port and has a conductive region in a direction perpendicular to the surface direction of the microwave supply port; and a jig that is fixed to the jig and extends in the surface direction A flange covering at least a part of the microwave introduction surface of the microwave supply port exposed to the inside of the processing container in a state where the jig is disposed in the concave portion of the microwave supply port. It is characterized by comprising a dielectric.

According to the film forming apparatus of the first aspect, the microwave is supplied along the processing surface of the material to be processed. The microwave is propagated to the sheath layer expanded by the negative bias voltage. As a result, high-density plasma is generated on the processing surface of the workpiece material and the region on the workpiece material side of the collar. When metal is contained in the gas, or metal particles sputtered from a metal material disposed in a region exposed to high-density plasma are deposited on the microwave introduction surface of the microwave supply port that is at least partially covered by the collar. Without depositing on the collar on the workpiece side. Therefore, the amount of these metal particles deposited on the introduction surface of the microwave supply port is reduced. Since this collar is removed together with the workpiece material and the jig after the film formation on the workpiece material is completed, a reduction in productivity due to cleaning of the microwave supply port can be reduced. According to the film forming apparatus of the second aspect, the microwave is supplied along the processing surface of the material to be processed. The microwave is propagated to the sheath layer expanded by the negative bias voltage. As a result, high-density plasma is generated on the processing surface of the workpiece material and the region on the workpiece material side of the collar. When metal is contained in the gas or metal particles sputtered from a metal material disposed in a region exposed to high-density plasma, the particles are not deposited on the microwave introduction surface of the microwave supply port covered by the collar. Deposits on the collar on the workpiece side. Therefore, the amount of these metal particles deposited on the introduction surface of the microwave supply port is reduced. Since this collar is removed together with the workpiece material and the jig after the film formation on the workpiece material is completed, a reduction in productivity due to cleaning of the microwave supply port can be reduced.

According to the film-forming apparatus of Claim 1 and 2, when a collar consists of a dielectric material, a microwave permeate | transmits a collar and is supplied toward a to-be-processed material. As a result, the microwave is more easily supplied to the material to be processed than when the collar is formed of a metal material. Accordingly, it is possible to reduce the possibility of adversely affecting the film formation process, such as a decrease in film formation speed, a decrease in film quality, or an unstable plasma state, while reducing a decrease in productivity.

A third aspect of the present invention is the film forming apparatus according to the first or second aspect, wherein the collar covers the entire surface of the microwave introduction surface.

  According to the film forming apparatus of the third aspect, since the collar covers the entire surface of the microwave introduction surface, the metal particles are not deposited on the microwave introduction surface of the microwave supply port that is entirely covered by the collar. Deposits on the collar on the workpiece side. Therefore, the amount of these metal particles deposited on the introduction surface of the microwave supply port is reduced. Since this collar is removed together with the workpiece material and the jig after the film formation on the workpiece material is completed, it is possible to further reduce the decrease in productivity caused by cleaning the microwave supply port.

  A fourth aspect of the present invention is the film forming apparatus according to the second or third aspect, wherein the coefficient of thermal expansion of a material other than the conductive region of the jig is the material of the collar. It is characterized by being equivalent to the coefficient of thermal expansion.

  According to the film forming apparatus of claim 4, when heat is generated at the time of film formation, the difference between the coefficient of thermal expansion of the collar material and the coefficient of thermal expansion of the material other than the conductive region of the jig, The possibility that either the jig or the brim will break can be reduced.

The present invention of claim 5 and 6 described, prior Symbol collar, characterized in that it comprises a notch that is cut out into the hole extending along the vertical direction or the planar direction.

According to the film-forming apparatus of Claim 5 and 6 , a metal particle adheres to a collar and it is possible to supply a microwave to a to-be-processed material from a hole or a notch. Accordingly, it is possible to reduce the possibility of adversely affecting the film formation process, such as a decrease in film formation speed, a decrease in film quality, or an unstable plasma state, while reducing a decrease in productivity.

A seventh aspect of the present invention is the film forming apparatus according to the fifth or sixth aspect , wherein the collar includes the hole extending in an inclined manner with respect to the perpendicular direction.

According to the film forming apparatus of the seventh aspect , it is possible to further reduce the possibility that the metal particles are deposited on the microwave supply port through the holes extending in an inclined manner. Therefore, since the possibility that metal particles are deposited on the microwave supply port can be reduced, the microwave can be stably supplied from the hole to the material to be processed. Accordingly, it is possible to reduce the possibility of adversely affecting the film formation process, such as a decrease in film formation speed, a decrease in film quality, or an unstable plasma state, while reducing a decrease in productivity.

The present invention of claim 8 Symbol mounting, the table surface is formed of a metallic material, wherein the includes a projecting portion arranged to project than the microwave introducing surface of the microwave feed opening, the protruding portion, the jig It engages with the level | step difference of the said collar fixed to the one end side of this, and the said jig | tool, It is characterized by the above-mentioned.

According to the deposition apparatus of claim 8 Symbol mounting protrudes from a surface of the projecting portion is a microwave supply port, so engages a step between the collar and the jig, the jig, and collar microwave supply It is easy to be positioned with respect to the mouth. Therefore, it is possible to reduce the possibility that metal particles generated by the plasma are deposited on the microwave supply port due to the positional deviation between the collar and the microwave supply port.

It is explanatory drawing which shows schematic structure of the film-forming apparatus which concerns on this embodiment. It is a perspective view explaining the cross section of the microwave supply port of the Z direction in the state where the holding jig was inserted in the microwave supply port, a side conductor, and a holding jig. It is a perspective view explaining the cross section of the microwave supply port of Z direction before a holding jig is inserted in a microwave supply port, a side conductor, and a holding jig. It is sectional drawing of the microwave supply port of the Z direction of the state where the holding jig was inserted in the microwave supply port, a side conductor, and a holding jig. It is sectional drawing of the microwave supply port of a Z direction before a holding jig is inserted in the microwave supply port which concerns on a modification, a side conductor, and a holding jig. It is sectional drawing of the microwave supply port of a Z direction in the state by which the holding jig was inserted in the microwave supply port which concerns on a modification, a side conductor, and a holding jig. It is sectional drawing of the Z direction of the cylindrical member which concerns on a modification. It is a perspective view of the collar which concerns on a modification. It is a perspective view of the collar which concerns on a modification. It is a perspective view of the collar which concerns on a modification. It is a perspective view of the collar which concerns on a modification. It is sectional drawing of the microwave supply port of a Z direction, a side conductor, and a holding jig in the state by which the holding jig is arrange | positioned at the microwave supply port based on the modification.

  DESCRIPTION OF EMBODIMENTS Hereinafter, a film forming apparatus according to the present invention will be described in detail with reference to the drawings based on an embodiment that is embodied.

  As shown in FIG. 1, the film forming apparatus 1 includes a processing container 2, a vacuum pump 3, a gas supply unit 5, a control unit 6, and the like. The processing container 2 is made of metal such as stainless steel and has a hermetic structure. The vacuum pump 3 is a pump capable of evacuating the inside of the processing container 2 via the pressure adjustment valve 7. Inside the processing container 1, a conductive work material 8 that is a film formation target is held by a holding jig 9.

  The material of the work material 8 is not particularly limited as long as the treatment surface 10 has conductivity, but in this embodiment, it is low-temperature tempered steel. Here, the low temperature tempered steel is a material such as JIS G4051 (carbon steel material for mechanical structure), G4401 (carbon tool steel material), G44-4 (steel material for alloy tool), or maraging steel material. In addition to the low-temperature tempered steel, the workpiece material may be a ceramic or a resin coated with a conductive material.

  The gas supply unit 5 supplies a film forming source gas and an inert gas into the processing container 2. Specifically, an inert gas such as He, Ne, Ar, Kr, or Xe and a source gas such as CH4, CH2, C2H2, or TMS (tetramethylsilane) are supplied. In the present embodiment, description will be made assuming that the material to be processed 8 is subjected to a DLC film formation process using CH4, C2H2, and TMS source gases. Source gas and inert gas are examples of the gas of the present invention.

  The flow rate and pressure of the source gas and the inert gas supplied from the gas supply unit 5 may be controlled via the control unit 6 or may be controlled by an operator. The source gas may be a gas containing a compound having a CH bond such as alkyne, alkene, alkane, aromatic compound, or a compound containing carbon. H2 may be included in the source gas.

  Plasma for performing the DLC film forming process on the material 8 to be processed held inside the processing container 2 is generated. This plasma is generated by the microwave pulse controller 11, the microwave oscillator 12, the microwave power source 13, the negative voltage power source 15, and the negative voltage pulse generator 16. In the present embodiment, description will be made on the assumption that surface wave excitation plasma is generated by a method disclosed in Japanese Patent Application Laid-Open No. 2004-47207 (hereinafter referred to as “MVP method (Microwave shear-Voltage combination Plasma method)”). In the following description, the MVP method will be described.

  The microwave pulse control unit 11 oscillates a pulse signal in accordance with an instruction from the control unit 6 and supplies the oscillated pulse signal to the microwave oscillator 12. The microwave oscillator 12 generates a microwave pulse according to the pulse signal from the microwave pulse controller 11. The microwave power source 13 supplies power to the microwave oscillator 12 that oscillates a microwave of 2.45 GHz with the instructed output in accordance with an instruction of the control unit 6. That is, the microwave oscillator 12 supplies a 2.45 GHz microwave to the isolator 17 described later as a pulsed microwave pulse according to the pulse signal from the microwave pulse control unit 11.

  The microwave pulse is transmitted from the microwave oscillator 12 to the isolator 17, the tuner 18, the waveguide 19, the coaxial waveguide 21 protruding from the waveguide 19 through a coaxial waveguide converter (not shown), quartz, and the like. Is supplied to the holding jig 9 and the processing surface of the work material 8 through a microwave supply port 22 made of a dielectric material or the like that transmits the microwave. The isolator 17 prevents the reflected wave of the microwave from returning to the microwave oscillator 12. The tuner 18 matches the impedances before and after the tuner 18 so that the reflected wave of the microwave is minimized. The coaxial waveguide 21 is an example of the waveguide of the present invention.

  As shown in FIGS. 2 and 3, the outer peripheral surface of the microwave supply port 22 excluding the upper end surface 22 </ b> U is covered with a side conductor 23 formed of a metal such as stainless steel. In other words, the upper end surface 22U is exposed inside the processing container 2. The side conductor 23 is fixed to the inner side surface of the processing container 2 by screwing or the like, and is electrically connected to the processing container 2 shown in FIG. The upper end surface 22U is an example of the microwave introduction surface of the present invention.

  A central conductor 21 </ b> C of the coaxial waveguide 21 is extended at the center of the microwave supply port 22. In order to efficiently propagate the surface wave to the work material 8, it is necessary to dispose the work material 8 as an extension of the central conductor of the coaxial waveguide 21. For this reason, the holding jig 9 is also arranged on the extension of the central conductor of the coaxial waveguide 21, and the holding jig 9 becomes the central conductor in the microwave supply port 22. Therefore, the holding jig 9, the central conductor 21C of the coaxial waveguide, and the side conductor 23 function as a coaxial waveguide.

  By the microwave pulse supplied to the microwave supply port 22, the microwave propagates near the upper end surface 22U where the holding jig 9 is disposed, and plasma is generated. That is, the microwave is supplied in the Z-axis direction, which is the direction in which the central conductor extends. A dielectric such as quartz is disposed as the microwave supply port 22 between the central conductor 21C of the coaxial waveguide 21 and the holding jig 9 in order to maintain a vacuum. In the description after the upper end surface 22U orthogonal to the Z-axis direction, the Z-axis direction, which is the microwave supply direction, may be described as the upper side, and the direction opposite to the Z-axis direction may be described as the lower side. The Z-axis direction is an example of the vertical direction of the present invention. The R direction in which the upper end surface 22R extends is an example of the surface direction of the present invention.

  The configuration of the holding jig 9 will be described with reference to FIG. The holding jig 9 includes a cylindrical member 91 and a collar 92. The cylindrical member 91 has a cylindrical shape, and at least the surface thereof is made of a metal such as stainless steel. That is, the side surface 91C of the holding jig 9 has conductivity in the Z direction. The inner surface 91I of the surface may be formed of a metal such as stainless steel, but is preferably formed of a dielectric such as quartz. A recess 91 </ b> R is formed in the upper end 9 </ b> U of the cylindrical member 91. The workpiece 8 is fixed to the recess 91R. The collar 92 is fixed to the side surface 91 </ b> C of the cylindrical member 91. The collar 92 is fixed to the cylindrical member 91 by a known method such as threading or bonding. Further, the collar 92 and the columnar member 91 do not need to be completely fixed, and an inclined surface or a step is formed on the side surface of the columnar member 91, and the collar 92 may abut on the step.

The collar 92 is made of a dielectric such as quartz. It is desirable that the material of the collar 92 has a thermal expansion coefficient equivalent to the material of the inside 91 </ b> I of the cylindrical member 91. For example, the thermal expansion coefficient of quartz is 5.6 × 10 ⁻⁷ K ⁻¹ , and the thermal expansion coefficient of the material of the collar 92 is not completely the same as the thermal expansion coefficient of the material of the inside 91 I of the cylindrical member 91. If heat is generated during film formation, the difference between the coefficient of thermal expansion of the material of the collar 92 and the coefficient of thermal expansion of the material of the inner 91I may cause either the cylindrical member 91 or the collar 92 to break. It only needs to be reduced. The cylindrical member 91 is the jig of the present invention.

  A recess 22R is formed in the upper end surface 22U so that the holding jig 9 is stably disposed in the microwave supply port 22. The depth direction of the recess 22R is parallel to the Z axis. The center conductor 21 </ b> C is disposed at a position facing the bottom surface of the recess 22 formed in the microwave supply port 22.

  Before starting film formation, the workpiece 8 is inserted into the recess 91R. The holding jig 9 into which the work material 8 is inserted is disposed in the recess 22R by a transport mechanism (not shown). As shown in FIG. 2, in the arrangement state, the holding jig 9 comes into contact with the bottom surface of the recess 22 </ b> R, and the collar 92 covers the upper end surface 22 </ b> U of the microwave supply port 22. Since the side surface 9C of the cylindrical member 91 has conductivity in the Z direction and the collar 92 is formed of a dielectric, the microwave supplied from the microwave supply port 22 passes through the collar 92 and the surface is made of metal. It progresses along the side surface 9C of the cylindrical member 91.

  As shown in FIG. 4, the collar 92 covers the upper end surface 22 </ b> U of the microwave supply port 22 in the arrangement state. In the state where the collar 92 covers the upper end surface 22U of the microwave supply port 22, the distance L1 between the collar 92 and the upper end surface 22U is arranged in a region exposed to the raw material gas particles or plasma depending on the presence or absence of the collar 92. The distance is such that the amount of deposited metal particles of the metal material such as the side conductor 23 is deposited on the upper end surface 22U during film formation is changed. For example, the collar 92 and the upper end surface 22U may be in contact with each other, and the distance L1 between the collar 92 and the upper end surface 22U may be about 0.02 mm.

  In a state where the holding jig 9 is disposed in the recess 22 </ b> R, the collar 92 covers at least a part of the upper end surface 22 </ b> U of the microwave supply port 22. That is, the collar 92 may be separated from the side conductor 23 in the R direction perpendicular to the Z-axis direction. For example, in the R direction, the distance L2 between the collar 92 and the side conductor 23 may be 0.02 mm apart. Therefore, during the film forming process, the possibility that the plasma will expose the upper end surface 22U is reduced, and the possibility that metal particles generated from the cylindrical member 91, the side electrode 23, etc. are deposited on the upper end surface 22U can be reduced. More desirably, the collar 92 covers the entire upper end surface 22U of the microwave supply port 22. The collar 92 may also cover the side conductor 23.

  As shown in FIGS. 1 and 2, the work material 8 is disposed so as to protrude toward the inside of the processing container 2 from the holding jig 9 that holds the work material 8 with respect to the microwave supply port 22. Has been.

  A negative voltage electrode 25 for applying a negative bias voltage pulse is electrically connected to the upper end portion of the work material 8 at the upper end portion of the work material 8.

  The negative voltage power supply 15 supplies a negative bias voltage to the negative voltage pulse generator 16 in accordance with an instruction from the controller 6. The negative voltage pulse generator 16 pulses the negative bias voltage supplied from the negative voltage power supply 15. This pulsing process is a process in which the negative voltage pulse generator 16 controls the magnitude, cycle, and duty ratio of the negative bias voltage pulse in accordance with an instruction from the controller 6. A negative bias voltage pulse, which is a pulsed negative bias voltage, is applied to the workpiece 8 held inside the processing vessel 2 via the negative voltage electrode 25.

  Even when the work material 8 is a metal substrate, or when a conductive material is coated on ceramic or resin, a negative bias voltage pulse is applied to at least the entire processing surface of the work material 8. The A negative bias voltage pulse is also applied to the entire surface of the holding jig 9 via the workpiece 8.

  The surface wave excitation plasma 28 is generated by controlling the generated microwave pulse and the negative bias voltage pulse to be applied at the same time. The microwave is not limited to 2.45 GHz, but may have a frequency of 0.3 GHz to 50 GHz. Further, although a pulsed microwave pulse is supplied, a continuous microwave may be supplied. The negative voltage power supply 15, the negative voltage pulse generator 16, and the negative voltage electrode 25 are examples of the negative voltage application unit of the present invention.

  The microwave control unit 11, the microwave oscillator 12, the microwave power source 13, the isolator 17, the tuner 18, the waveguide 19, and the coaxial waveguide 21 are examples of the microwave supply unit of the present invention. The film forming apparatus 1 includes the negative voltage power supply 15 and the negative voltage pulse generator 16, but may further include a positive voltage power supply and a positive voltage pulse generator, or instead of the negative voltage pulse generator 16. In addition, a negative voltage generator for applying a continuous negative bias voltage instead of a pulsed negative bias voltage may be provided.

  A radiation thermometer 29 is arranged at a position near the outside of the quartz window 27 provided on the side wall of the processing container 2. The radiation thermometer 29 is electrically connected to the control unit 6. The radiation thermometer 29 receives infrared rays and calculates the intensity of the received infrared rays. The surface temperature of the workpiece 8 is calculated from the calculated infrared intensity. The radiation thermometer 29 outputs the calculated temperature information of the work material 8 to the control unit 6.

  The control unit 6 outputs control signals to the negative voltage power supply 15 and the microwave power supply 13 to control the applied power of the microwave pulse and the applied voltage of the negative voltage pulse. The control unit 6 outputs a control signal to the negative voltage pulse generation unit 16 and the microwave pulse control unit 11, thereby generating a pulsed negative bias voltage pulse application timing, a supply voltage, and a microwave oscillator 12. Control the supply timing and power supply of the microwave pulse.

  The control unit 6 outputs a flow rate control signal to the gas supply unit 5 to control the supply of the source gas and the inert gas. The control unit 6 outputs a control signal to the pressure adjustment valve 7 based on a pressure signal representing the pressure in the processing container 2 input from the vacuum gauge 26 attached to the processing container 2, and Control the pressure.

[Description of surface wave excitation plasma]
Usually, when generating surface wave excitation plasma, a microwave is supplied along the interface between a plasma having a certain level of electron (ion) density and a dielectric in contact with the plasma. The supplied microwave is propagated as a surface wave with the energy of electromagnetic waves concentrated on this interface. As a result, the plasma in contact with the interface is excited by a high energy density surface wave and further amplified. Thereby, a high density plasma is generated and maintained. However, when this dielectric is replaced with a conductive material, the conductive material does not function as a surface wave waveguide, and preferable surface wave propagation and plasma excitation cannot occur.

  On the other hand, an essentially unipolar charged particle layer, a so-called sheath layer, is formed near the surface of an object in contact with plasma. In the case where the object is a work material 8 having conductivity to which a negative bias voltage is applied, the sheath layer is a layer having a low electron density, that is, positive polarity, and substantially has a relative dielectric constant in the microwave frequency band. It is a layer of ε≈1. For this reason, the sheath thickness of the sheath layer can be increased by making the absolute value of the negative bias voltage to be applied larger than the absolute value of, for example, −100V. That is, the sheath layer expands. This sheath layer acts as a dielectric that propagates surface waves to the interface between the plasma and the object in contact with the plasma.

  Therefore, a microwave is supplied from the microwave supply port 22 disposed in the vicinity of one end of the holding jig 9 that holds the workpiece 8, and a negative bias voltage is applied to the workpiece 8 and the holding jig 9. When applied, the microwave propagates as a surface wave along the interface between the sheath layer and the plasma. As a result, high-density excitation plasma based on surface waves is generated along the processing surface 10 of the workpiece 8 and the holding jig 9. This high-density excitation plasma is the surface wave excitation plasma 28 described above.

The electron density of the high-density plasma due to surface wave excitation in the vicinity of the surface of the workpiece 8 reaches 10 ¹¹ to 10 ¹² cm ⁻³ . When the DLC film formation process is performed by plasma CVD using the MVP method, the film formation speed is 3 to 30 (nanometers / second), which is one to two orders of magnitude higher than the case where the DLC film formation process is performed by normal plasma CVD. Therefore, high-speed film formation is possible.

  In this MVP method, the holding jig 9 is disposed in close contact with the microwave supply port 22, and a sheath layer is formed along the processing surface 10 of the holding jig 9 and the work material 8. A high-density plasma is generated by the microwave propagating as a surface wave along the sheath layer expanded by the bias voltage. Since the plasma density is high, the material 8 to be processed is formed at high speed. Since high-speed film formation by high-density plasma is performed, metal particles are likely to be deposited on the upper end surface 22U of the microwave supply port 22, but in this embodiment, the collar 92 covers the upper end surface 22U. After the film formation on 8 is completed, the workpiece 8 and the holding jig 9 are removed together, so that a reduction in productivity due to cleaning of the microwave supply port 22 can be reduced. In addition, since the holding jig 9 whose side surface 91C has conductivity in the Z direction is disposed to face the central conductor 21C, the microwave propagates efficiently in the Z direction.

  Specific microwave pulse and negative bias voltage pulse application methods in the present embodiment are described in JP-A-2004-47207, JP-A-2013-155409, and the like, and will not be described.

<Film formation process>
The processing container 2 is connected to a first load lock chamber and a second load lock chamber (not shown). The first load lock chamber is a preparation chamber that is partitioned by the processing container 2 and the gate valve, and the work material 8 is fixed to the holding jig 9. The second load lock chamber is partitioned by the processing container 2 and the gate valve, and is a take-out chamber from which the processed material 8 subjected to film formation and the holding jig 9 are taken out. A transport mechanism that transports the holding jig 9 that holds the workpiece 8 between the processing container 2, the first load lock chamber, and the second load lock chamber is provided. In a state in which the processing container 2 and the second load lock chamber are evacuated and the gate valve between the processing container 2 and the first load lock chamber is closed, the workpiece 8 is held in the first load lock chamber. It is fixed to the tool 9. Then, the first load lock chamber is evacuated. When the pressure in the first load lock chamber reaches a predetermined degree of vacuum, the gate valve between the processing container 2 and the first load lock chamber is opened, and the holding jig 9 to which the work material 8 is fixed is not shown. It is conveyed to the processing container 2 by the conveyance mechanism. The conveyed work material 8 and the holding jig 9 are arranged in a recess 22R formed in the upper end surface 22U of the microwave supply port 22. Next, the gate valve between the processing container 2 and the first load lock chamber and the gate valve between the processing container 2 and the second load lock chamber are closed, and evacuation is started. When the pressure inside the processing container 2 reaches a predetermined value, a film forming process is performed. During the film formation, the next work material 8 is fixed to the holding jig 9 in the first load lock chamber, and the first load lock chamber is evacuated. When the film forming process is completed, the processing container 2 and the gate valve of the second load lock chamber are opened, and the workpiece 8 and the holding jig 9 are transferred to the second load lock chamber by the transfer mechanism. Then, the processing container 2 and the second load lock chamber are evacuated, and the holding jig 9 to which the work material 8 is fixed is transferred from the first load lock chamber to the processing container 2 and is similarly subjected to film formation. Is done.

  That is, the holding jig 9 is carried into the processing container 2 together with the material to be processed 8, and is unloaded from the processing container 2 together with the material to be processed 8 when the film forming process is completed. Therefore, even if metal particles are deposited on the upper surface of the collar 92 of the holding jig 9 during film formation, if the deposited metal particles are cleaned after being carried out, the microparticles in the process container 2 are formed inside the process container 2. It is not necessary to clean the upper end surface 22U of the wave supply port 22 or the upper surface of the collar 92. Therefore, a decrease in productivity due to the cleaning process inside the processing container 2 is suppressed. In addition, during the cleaning of the upper surface of the flange 92 of the holding jig 9 that holds the film-formed workpiece 8 conveyed to the second load lock chamber, the workpiece 9 held by another holding jig 9 is also retained. However, since it is possible to form a film in the processing container 2, it is possible to continuously form a film on a plurality of work materials 8 and improve productivity. In the present embodiment, since the side surface 91C of the holding jig 9 has conductivity in the Z direction, the side surface 91C and the side surface conductor 23 function as a coaxial waveguide, and microwaves can be efficiently applied to the workpiece 8. Supplied. Since the collar 92 made of a dielectric is fixed to the conductive side surface 91C, the microwave is efficiently reflected and supplied to the material 8 to be processed.

  In the above embodiment, the recess 22R is formed in the upper end surface 22U of the microwave supply port 22 and the columnar member 91 of the holding jig 9 is inserted into the recess 22R. However, the present invention is not limited to this. As shown in FIG. 5, the metal member 30 is disposed in the recess 22R. The metal member 30 includes a support member 31, a coil spring 32, and a positioning portion 33. The support member 31 has a conductive surface and directs the traveling direction of the microwave in the Z-axis direction. The inside of the support member 31 is formed of the same dielectric material such as quartz as the microwave supply port 22, and the possibility of damage due to thermal expansion is reduced. A concave portion whose upper side is opened is formed in the support member 31. One end of the coil spring 32 is fixed to the bottom surface of the recess formed in the support member 31, and the other end is fixed to the positioning portion 33. The positioning portion 33 is made of a metal such as stainless steel, and the upper surface is formed in a spherical shape.

  The positioning portion 33 protrudes above the upper end surface 22U of the microwave supply port 22. The bottom surface of the cylindrical member 91 shown in FIG. 2 is a flat surface. However, if the same spherical recess as the top surface of the positioning portion 33 is formed on the bottom surface of the cylindrical member 91, the holding jig 9 to which the work material 8 is fixed is fixed. Is easily positioned with respect to the microwave supply port 22.

  Moreover, in the said embodiment, although the collar 92 was fixed to the center of the Z-axis direction of the cylindrical member 91, it is not restricted to this. This will be described with reference to FIG. The holding jig 9 </ b> A includes a cylindrical member 93 and a collar 94. The cylindrical member 93 has a cylindrical shape and is made of a metal such as stainless steel. That is, the side surface of the holding jig 9 has conductivity in the Z direction. A concave portion 93 </ b> R is formed at the upper end 93 </ b> U of the cylindrical member 93. The work material 8 is fixed to the recess 93R. A collar 94 is fixed to the lower side surface of the cylindrical member 93. The collar 94 is fixed to the cylindrical member 93 by a known method such as threading or bonding. The collar 94 is made of a dielectric such as quartz. In a state where the cylindrical member 93 and the collar 94 are fixed, the cylindrical member 93 does not penetrate the collar 94. In other words, the lower end of the cylindrical member 93 is located inside the collar 94 formed in a ring shape. Therefore, in the state where the cylindrical member 93 and the collar 94 are fixed, the stepped portion 95 is formed by the cylindrical member 93 and the collar 94. As shown in FIG. 6, when the holding jig 9 to which the work material 8 is fixed is disposed with respect to the microwave supply port 22, the stepped portion 95 is in electrical contact with the positioning portion 33 and is engaged. As a result, positioning becomes easier. Therefore, it is possible to reduce the possibility that metal particles generated by the plasma are deposited on the upper end surface 22U of the microwave supply port 22 due to the positional deviation between the collar 94 and the microwave supply port 22. The positioning part 33 is an example of the protrusion part of this invention.

  In the above embodiment, the holding jigs 9 and 9A are carried into the processing container 2 together with the material 8 to be processed, and are carried out from the processing container 2 when the film formation is completed. However, the present invention is not limited to this. The holding jig 9B and the collars 97 and 97A to 97C will be described with reference to FIGS. The holding jig 9B includes a cylindrical member 96 shown in FIG. 7 and a collar 97 shown in FIG. The cylindrical member 96 has a cylindrical shape and is made of a metal such as stainless steel. That is, the side surface of the holding jig 9B has conductivity in the Z direction. A recess 96R is formed in the upper end 96U of the cylindrical member 96. The workpiece 8 or a support member that supports the workpiece 8 is fixed to the recess 96R. The lower part of the recess 96R is formed in a polygonal pyramid shape with the lowest end as the vertex.

  As shown in FIG. 8, the collar 97 is formed of a dielectric such as quartz, and includes a hole 97H1 and four holes 97H2. The cylindrical member 96 is inserted into the hole 97H1 and is fixed to the side surface of the cylindrical member 96 by a known method such as threading and bonding, as in the above-described embodiment. The hole 97H2 extends along the Z-axis direction. The hole 97H2 extends in a direction inclined with respect to the Z-axis direction, and the upper opening position and the lower opening position are different in the R direction orthogonal to the Z-axis. The collar 97 fixed to the cylindrical member 96 is disposed on the upper end surface 22U of the microwave supply port 22. The work material 8 is carried into the processing container 2 and inserted into the recess 96 </ b> R of the cylindrical member 96. When the film forming process is completed, the workpiece 8 is unloaded from the processing container 2. Next, a dummy rod having a lower portion formed in a polygonal pyramid shape is inserted into the recess 96 </ b> R of the cylindrical member 96. Unlike the material 8 to be processed, the dummy rod is a member for forming a hole 97H2 on the upper end surface 22U without being formed into a film. When the dummy rod is inserted by this transport mechanism, the force in the insertion direction is decomposed into a rotational force so that the polygonal pyramid surface of the recess 96R and the polygonal pyramid surface of the dummy rod face each other. The collar 97 is rotated so that the 96R polygonal pyramid surface and the polygonal pyramid surface of the dummy rod face each other. The dummy rod is inserted by the transport mechanism so that the position of the polygonal pyramid surface of the dummy rod is different every time. The position of the hole 97H2 on the upper end surface 22U may be changed by a dummy rod in which a screw hole or the like is formed in the concave portion 96R and formed in a drill shape. . Then, the dummy rod is removed from the holding jig 9B, the workpiece material 8 is carried into the processing container 2, inserted into the concave portion 96R of the cylindrical member 96, and a film forming process is performed. In this film forming process, the collar 97 is rotated by a predetermined angle, and the opening position below the hole 97H2 is different from the position with respect to the upper end surface 22U of the microwave supply port 22 at the time of the previous film formation of the workpiece 8. Therefore, even if metal particles are deposited on the upper surface 97U of the collar 97 and the upper end surface 22U of the opening position below the hole 97H2 at the time of the previous film formation, the lower side of the hole 97H2 is formed at the time of the current film formation. No metal particles are deposited on the upper end surface 22U of the opening position. Therefore, microwaves are supplied to the workpiece 8 from the opening position below the hole 97H2 through the hole 97H2. When the predetermined number of workpieces 8 have been formed, or when the film forming process has passed for a predetermined time, the brim 97 where the metal particles are deposited is replaced with the brim 97 where no metal particles are deposited. For example, it is possible to reduce a decrease in productivity due to cleaning the microwave supply port 22 every time film formation of the workpiece 8 is completed. The hole 97H2 is an example of the hole of the present invention.

  In the above, a dummy rod having a lower portion formed in a polygonal pyramid shape is inserted. A support member having a lower portion formed in a polygonal pyramid shape may be inserted into the recess 96R. For example, a support member that supports the workpiece 8 is carried into the processing container 2 and inserted into the recess 96 </ b> R of the cylindrical member 96. At the time of insertion, the collar 97 is rotated so that the polygonal pyramid surface of the recess 96R and the polygonal pyramid surface of the support member face each other in the same manner as described above. Therefore, the opening position on the lower side of the hole 97H2 is different from the position with respect to the upper end surface 22U of the microwave supply port 22 at the time of the previous film formation of the workpiece 8. Therefore, at the time of film formation this time, metal particles are not deposited on the upper end surface 22U at the lower opening position of the hole 97H2. A microwave is supplied to the work material 8 through the hole 97H2 rotated by a predetermined angle, and a film forming process is performed.

  The collar 97 includes the hole 97H1 and the four holes 97H2, but is not limited thereto. Hereinafter, the collars 97A to 97C will be described. As shown in FIG. 9, the collar 97A is formed of a dielectric such as quartz, and includes a hole 97AH1 and six notches 97AH2. The hole 97AH1 is formed at the center of the plate and extends in a direction intersecting the Z-axis direction. The notch 97AH2 is formed by cutting the plate material in the R direction. The notch 97AH2 is formed at an interval from the notch 97AH2 adjacent in the circumferential direction of the hole 97AH1.

  As shown in FIG. 10, the collar 97B is formed of a dielectric such as quartz and includes a hole 97BH1 and four long holes 97BH2. The hole 97BH1 is formed at the center of the plate and extends in a direction intersecting the Z-axis direction. The long hole 97BH2 is formed to extend in the R direction from the hole 97BH1 in the plate material in which the hole 97HA1 is formed. The hole 97BH1 and the long hole 97BH2 may or may not be connected. The long hole 97BH2 is formed at an interval from the long hole BH2 adjacent in the circumferential direction of the hole 97BH1.

  As shown in FIG. 11, the collar 97C is made of a dielectric material such as quartz and includes a hole 97CH1 and six holes 97CH2. The hole 97CH1 is formed at the center of the plate and extends in a direction intersecting the Z-axis direction. The hole 97CH2 is formed to extend in the R direction from the hole 97CH1 in the plate material in which the hole 97HC1 is formed. The hole 97CH2 is formed at an interval from the hole CH2 adjacent in the circumferential direction of the hole 97CH1.

  In the collars 97 and 97A to C shown in FIGS. 8 to 11, the holes 97H2, the long holes 97BH2, and the holes 97CH2 are provided, so that the metal particles are the collars 97, 97A to C, and the holes 97H2, the long holes 97BH2, and the holes 97CH2. Even if it is deposited on the upper end surface 22U corresponding to the position, the microwaves are supplied from the side surfaces of the hole 97H2, the long hole 97BH2, and the hole 97CH2, so that a reduction in productivity is reduced.

  In the above embodiment, the film formation is performed using the source gas and the inert gas, but an etching gas or an ashing gas may be used. Moreover, although the cylindrical columnar members 91, 93, and 96 are used as the jig of the present invention, a polygonal column such as a quadrangular column or a triangular column may be used. Further, as the collar of the present invention, the collars 92, 94, 97, 97A, 97B, and 97C formed from a dielectric are used, but a collar formed from a metal material may be used. When a collar formed of a metal material is used, a hole such as a hole 97H2 through which microwaves are transmitted must be formed, and the collar of the metal member is grounded because a negative voltage is applied. In order to prevent a short circuit with the side electrode 23, it is desirable not to cover the entire upper end surface 22U of the microwave supply port 22. In addition, the collars 92, 94, 97, 97A, 97B, and 97C may be made of alumina in order to improve etching resistance.

  In the above embodiment, it is desirable that a polishing portion such as a file is provided on the lower surface of the collar 92, 94, 97, 97A, 97B, 97C. When the collars 92, 94, 97, 97A, 97B, and 97C are positioned with respect to the microwave supply port 22, the upper end surface 22U and the polishing portion come into contact with each other to clean the metal member.

  According to this embodiment, the microwave is supplied along the processing surface 10 of the workpiece 8. The microwave is propagated to the sheath layer expanded by the negative bias voltage. As a result, high-density plasma is generated on the processing surface 10 of the workpiece 8 and the regions of the collars 92, 94, 97, 97A, 97B, and 97C on the workpiece 8 side. When the metal particles are included in the gas, or the metal particles of the metal material such as the work material 8, the holding jigs 9, 9 </ b> A, 9 </ b> B, and the side electrode 23 disposed in the region exposed to the high density plasma, the work material Deposit on the eight side collars 92, 94, 97, 97A, 97B, 97C. Since the collars 92, 94, 97, 97A, 97B, and 97C cover at least a part of the upper end surface 22U, the amount of these metal particles deposited on the upper end surface 22U of the microwave supply port 22 is reduced. Since this collar is removed together with the workpiece material 8 and the cylindrical members 91, 93, 96 after the film formation on the workpiece material 8 is completed, it is possible to reduce the decrease in productivity caused by cleaning the upper end surface 22U. .

  Further, since the collars 92, 94, 97, 97A, 97B, and 97C are made of a dielectric, the microwaves are transmitted to the workpiece 8 through the collars 92, 94, 97, 97A, 97B, and 97C. The As a result, it is easier to supply microwaves to the workpiece material 8 than when the collars 92, 94, 97, 97A, 97B, and 97C are formed of a metal material. Accordingly, it is possible to reduce the possibility of adversely affecting the film formation process, such as a decrease in film formation speed, a decrease in film quality, or an unstable plasma state, while reducing a decrease in productivity.

  Further, when the collar 97 is formed of a dielectric, it is possible to reduce the possibility that the metal particles adhere to the upper end surface 22U through the hole 97H2 extending in an inclined manner. When the collar 97 is formed of a metal material, the metal particles are attracted to the surface where the hole 97H2 is formed, so that the possibility that the metal particle is deposited on the upper end surface 22U through the hole 97H2 extending in an inclined manner is reduced. it can. Therefore, the possibility that the metal material is deposited on the upper end surface 22U can be reduced, and therefore the microwave can be stably supplied from the hole 97H2 to the workpiece material 8. Accordingly, it is possible to reduce the possibility of adversely affecting the film formation process, such as a decrease in film formation speed, a decrease in film quality, or an unstable plasma state, while reducing a decrease in productivity.

  Also, as shown in FIG. 12, the microwave supply port 122 may include the upper end surface 122U parallel to the R direction without including the recess 22R illustrated in FIG. The holding jig 190 includes a cylindrical member 191 and a collar 192. The cylindrical member 191 and the collar 192 are the same as the cylindrical member 91 and the collar 92 shown in FIG. 2, but the fixing position of the collar 192 with respect to the cylindrical member 191 is lower than the fixing position of the collar 92 with respect to the cylindrical member 191. It is desirable that As a result, when the film forming process is performed in a state where the holding jig 190 is disposed to face the central conductor 21 </ b> C via the microwave supply port 122, metal particles are formed on the upper end surface 122 </ b> U of the microwave supply port 122. The amount of deposition decreases.

DESCRIPTION OF SYMBOLS 1 Film-forming apparatus 2 Processing container 6 Control part 8 Work material 9 Holding jig 10 Processing surface 11 Microwave pulse control part 12 Microwave oscillator 13 Microwave power supply 15 Negative voltage power supply 16 Negative voltage pulse generation part 17 Isolator 18 Tuner 21 Coaxial waveguide 21C Central conductor 22 Microwave supply port 23 Side electrode 30 Metal member 31 Support member 33 Positioning portion 91 Column member 92 Brim 93 Column member 94 Brim 95 Step portion 96 Column member 97 Brim

Claims (8)

A processing container in which a work material having conductivity can be disposed; and
A gas supply unit for supplying gas into the processing container;
A microwave supply unit for supplying a microwave for generating plasma along the processing surface of the workpiece material via a waveguide;
A negative voltage application unit that applies a negative bias voltage to the workpiece material to expand a sheath layer along the processing surface of the workpiece material;
A microwave supply port for propagating microwaves supplied from the microwave supply unit to the expanded sheath layer; and a state in which the work material is supported while the waveguide material is supported via the microwave supply port. A jig that is disposed to face the center conductor and includes a region having conductivity in a direction perpendicular to the surface direction of the microwave supply port;
At least a microwave introduction surface of the microwave supply port that is fixed to the jig, extends in the surface direction, and is exposed to the inside of the processing container in a state where the jig is disposed to face the central conductor. A collar covering a part,
With
The film forming apparatus, wherein the collar is made of a dielectric. A processing container in which a work material having conductivity can be disposed; and
A gas supply unit for supplying gas into the processing container;
A microwave supply unit for supplying microwaves for generating plasma along the processing surface of the workpiece material;
A negative voltage application unit that applies a negative bias voltage to the workpiece material to expand a sheath layer along the processing surface of the workpiece material;
A microwave supply port having a recess that propagates microwaves supplied from the microwave supply unit to the expanded sheath layer and opens inside the processing container;
A jig that can be disposed in the concave portion of the microwave supply port in a state of supporting the material to be processed, and includes a region having conductivity in a direction perpendicular to a surface direction of the microwave supply port;
The microwave introduction surface of the microwave supply port exposed to the inside of the processing container in a state where the jig is disposed in the concave portion of the microwave supply port that is fixed to the jig and extends in the surface direction. A collar covering at least a portion,
The collar, film forming apparatus, characterized in that a dielectric. The film forming apparatus according to claim 1, wherein the collar covers the entire surface of the microwave introduction surface. 4. The film formation according to claim 1, wherein a thermal expansion coefficient of a material other than the conductive region of the jig is equal to a thermal expansion coefficient of the collar material. apparatus. A processing container in which a work material having conductivity can be disposed; and
A gas supply unit for supplying gas into the processing container;
A microwave supply unit for supplying a microwave for generating plasma along the processing surface of the workpiece material via a waveguide;
A negative voltage application unit that applies a negative bias voltage to the workpiece material to expand a sheath layer along the processing surface of the workpiece material;
A microwave supply port for propagating microwaves supplied from the microwave supply unit to the expanded sheath layer; and a state in which the work material is supported while the waveguide material is supported via the microwave supply port. A jig that is disposed to face the center conductor and includes a region having conductivity in a direction perpendicular to the surface direction of the microwave supply port;
At least a microwave introduction surface of the microwave supply port that is fixed to the jig, extends in the surface direction, and is exposed to the inside of the processing container in a state where the jig is disposed to face the central conductor. A collar covering a portion,
The film forming apparatus, wherein the collar includes a hole extending along the vertical direction or a notch cut in a surface direction. A processing container in which a work material having conductivity can be disposed; and
A gas supply unit for supplying gas into the processing container;
A microwave supply unit for supplying microwaves for generating plasma along the processing surface of the workpiece material;
A negative voltage application unit that applies a negative bias voltage to the workpiece material to expand a sheath layer along the processing surface of the workpiece material;
A microwave supply port having a recess that propagates microwaves supplied from the microwave supply unit to the expanded sheath layer and opens inside the processing container;
A jig that can be disposed in the concave portion of the microwave supply port in a state of supporting the material to be processed, and includes a region having conductivity in a direction perpendicular to a surface direction of the microwave supply port;
The microwave introduction surface of the microwave supply port exposed to the inside of the processing container in a state where the jig is disposed in the concave portion of the microwave supply port that is fixed to the jig and extends in the surface direction. A collar covering at least a portion,
The film forming apparatus, wherein the collar includes a hole extending along the vertical direction or a notch cut in a surface direction. The film forming apparatus according to claim 5, wherein the collar includes the hole extending in an inclined manner with respect to the perpendicular direction. A processing container in which a work material having conductivity can be disposed; and
A gas supply unit for supplying gas into the processing container;
A microwave supply unit for supplying a microwave for generating plasma along the processing surface of the workpiece material via a waveguide;
A negative voltage application unit that applies a negative bias voltage to the workpiece material to expand a sheath layer along the processing surface of the workpiece material;
A microwave supply port for propagating the microwave supplied from the microwave supply unit to the expanded sheath layer;
A region having conductivity in a direction perpendicular to the surface direction of the microwave supply port, which is disposed to face the central conductor of the waveguide through the microwave supply port while supporting the material to be processed. A jig comprising:
At least a microwave introduction surface of the microwave supply port that is fixed to the jig, extends in the surface direction, and is exposed to the inside of the processing container in a state where the jig is disposed to face the central conductor. A collar covering a part,
With
The surface is formed of a metal material, and includes a protruding portion arranged to protrude from the microwave introduction surface of the microwave supply port,
The protrusion is engaged with a step between the collar fixed to one end of the jig and the jig, and makes electrical contact with the jig.

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