JP4781711B2 - Plasma processing apparatus and plasma processing method - Google Patents

Description

  The present invention relates to a plasma processing apparatus and a plasma processing method for supplying a processing gas into a processing container using two systems of gas supply means.

  Conventionally, there has been proposed a plasma processing apparatus that supplies two different types of gas from two gas supply mechanisms (for example, gas showerheads) provided above and below a processing vessel (for example, Patent Document 1). See).

JP 7-31348 A

  On the other hand, in recent years, in order to cope with an increase in the area of a substrate, a plasma processing apparatus for plasma processing the substrate has been increased in size. Along with this, in order to generate uniform plasma in the processing vessel, the gas shower head also needs to be enlarged. However, according to the above prior art, since the gas shower head is integrally formed, there is a limit in increasing the size of the gas shower head in consideration of the rigidity of the gas shower head.

  The present invention has been made in view of such problems, and an object thereof is to provide a plasma processing apparatus and a plasma processing method for supplying a processing gas into a processing container using a plurality of gas supply pipe parts. It is to provide.

  In order to solve the above-described problems, according to one aspect of the present invention, a plasma processing apparatus that plasma-processes a substrate by plasma-processing a processing gas supplied into a processing vessel and introducing the processing gas. A plurality of gas introduction parts, a plurality of gas supply pipe parts, a first gas supply means for releasing a first processing gas introduced into at least one of the gas introduction parts into the processing container, and at least And a second gas supply means for discharging the second processing gas introduced into any of the gas introduction portions into the processing container using the plurality of gas supply pipe parts. A processing device is provided.

  As described above, a conventional gas supply mechanism (for example, a gas shower head) is integrally formed. In contrast, the gas supply mechanism of the present invention is formed of a plurality of gas supply pipe parts. As a result, the gas shower head can be easily increased in area simply by increasing the number of gas supply pipe parts.

  Further, according to the present invention, the two processing gases are separately supplied into the processing container by the first gas supply means and the second gas supply means. Thereby, two or more kinds of processing gases can be separately converted into plasma in one processing process. As a result, each gas can be appropriately dissociated or ionized in accordance with the properties of the processing gas, and a desired plasma processing can be performed on the substrate by the plasma generated thereby.

  In addition, when a gas supply pipe part fails, such as when the gas supply pipe part deteriorates due to ion collisions occurring during the treatment process, only the defective part needs to be replaced. There is no need to replace the entire showerhead. As a result, maintenance and management of the plasma processing apparatus can be facilitated and costs required for maintenance of the plasma processing apparatus can be reduced.

  Here, the plurality of gas supply pipe parts may be installed below a supply port to which the first processing gas is supplied.

  According to this, the first processing gas is turned into plasma, and the second processing gas is turned into plasma by the plasma. As a result, dissociation of the second processing gas is not promoted, and a desired plasma process can be performed on the substrate.

  The plurality of gas supply pipe parts may be formed of a non-metal, but is preferably formed of a dielectric. In particular, when the gas supply pipe part is made of a dielectric, the gas supply pipe part is less affected by the sheath, as in the case where the gas supply pipe part is made of metal. The electromagnetic field near the surface of the tube parts is not disturbed, and the distribution of plasma generation is not distorted. For this reason, more uniform plasma can be generated. Further, according to this, the problem that occurred when the gas shower head was made of metal, that is, the gas supply pipe was thermally deformed (for example, the gas supply pipe was broken or melted by the heat of the plasma). The problem that the gas supply pipe corrodes during plasma processing can be solved.

  The plurality of gas supply pipe parts are provided with a plurality of pores, respectively, and the second gas supply means supplies the second processing gas to the plurality of gas supply pipe parts. You may make it discharge | emit into the said processing container in the shape of a shower from the pore.

  According to this, the second processing gas is discharged in a shower shape into the processing container from the plurality of pores provided in the plurality of gas supply pipe parts. Thereby, the second processing gas can be uniformly discharged into the processing container. As a result, plasma can be generated more uniformly from the second processing gas.

  Note that the predetermined position in the processing vessel where the plurality of gas supply pipe parts are provided is, for example, between a dielectric provided in the processing vessel and a mounting table provided opposite to the dielectric. And a position farther from the dielectric than the position where the first processing gas is supplied.

  The plasma processing apparatus may further include a support that supports the plurality of gas supply pipe parts. According to this, the support body can maintain the rigidity of the entire gas shower head by supporting a plurality of gas supply pipe parts, and the area of the gas shower head can be increased by increasing the number of gas supply pipe parts. can do.

  Specifically, conventionally, the entire shower head is integrally formed of a dielectric, and the shower head itself is provided to be supported by the wall of the processing vessel. However, in the present invention, as described above, the shower head is formed by a plurality of gas supply pipe parts supported by the support. And this support body may be formed from the metal. According to this, heat can be efficiently released from the gas supply pipe parts to the metal support as compared with the conventional case where the entire shower head is integrally formed of a dielectric. As a result, it is possible to prevent the gas supply pipe part from being damaged due to the high temperature of the gas supply pipe part due to plasma heat or the like during the process.

  Moreover, the said support body may be fixed with respect to the said processing container so that expansion-contraction is possible. According to this, a plurality of gas supply pipe parts can be moved to a desired position in the processing container by expansion and contraction of the support. This takes into account that the second process gas is turned into plasma due to the electromagnetic field weakened when the first process gas is turned into plasma or the collision with the plasma generated from the first process gas. The gas supply pipe parts can be moved to a position where the best plasma is generated based on the properties of various processing gases supplied according to the processing process. As a result, the positions of a plurality of gas supply pipe parts can be set in accordance with the degree of gas dissociation by plasma that is more uniform, has a low electron temperature (Te), and a high electron density (Ne).

  A plurality of the support bodies and the gas introduction sections are provided, and at least one of the first path and the second path respectively connected to the plurality of gas introduction sections is provided inside the plurality of support bodies. May be provided. At this time, the first gas supply means may supply the first processing gas from the first path via at least one of the gas introduction portions. Further, the second gas supply means may supply the second processing gas from the plurality of gas supply pipe parts via at least one of the gas introduction portions and the second path.

  According to this, the first processing gas is supplied from the first path, and the second processing gas is supplied from a plurality of gas supply pipe parts via the second path. Thereby, the second processing gas is supplied to different positions in the processing container through a path different from the path through which the first processing gas passes. Thereby, two or more kinds of processing gases can be separately converted into plasma in a desired state in one processing process. As a result, plasma with higher uniformity, lower electron temperature (Te), and higher electron density (Ne) can be generated from the processing gas, and the substrate can be subjected to plasma processing with high accuracy.

  As a kind of gas supplied, for example, the first processing gas may be a gas having a higher molecular bond energy than the second processing gas. According to this, when the first processing gas is turned into plasma, energy is consumed, and the second processing gas is turned into plasma by the microwave whose energy is slightly weakened. As a result, strong plasma can be generated from the first processing gas, which is an inert gas having a large molecular bonding energy, and the second processing gas, which is a reactive gas having a low molecular bonding energy, can be dissociated. Plasma can be generated to such an extent that it does not promote much. As a result, the substrate can be processed with high accuracy by plasma that is more uniform and has a high electron density (Ne) and a low electron temperature (Te).

For example, when the first processing gas is argon gas (Ar) having a large molecular bond energy and the second processing gas is silane gas (SiH ₄ ) or hydrogen gas (H ₂ ) having a low molecular bond energy, Argon gas is sufficiently dissociated or ionized by microwaves with strong energy. On the other hand, silane gas and hydrogen gas are dissociated or ionized moderately by microwaves that are separated from the slot antenna made of a dielectric and have a weak electric field. For example, SiH ₄ dissociates to SiH ₃ radicals, but the dissociation does not progress so much as it dissociates to SiH ₂ radicals. As a result, a highly accurate amorphous silicon film can be generated on the substrate using the generated plasma without deteriorating the film by SiH ₂ radicals.

  According to another aspect of the present invention, there is provided a plasma processing method for plasma-processing a substrate by converting a processing gas supplied into a processing vessel into a plasma by using a microwave, and a plurality of gas introducing portions for introducing the gas Of these, a gas different from the step of supplying the first processing gas into the processing container from the first path via at least one of the gas introducing portions and the gas introducing portion for supplying the first processing gas. And a step of supplying a second processing gas into the processing container from a plurality of gas supply pipe parts via an introduction part and a second path.

  According to this, the first processing gas is supplied into the processing container from the first path, and the second processing gas is supplied from the plurality of gas supply pipe parts via the second path. Accordingly, the area of the gas shower head can be easily increased by increasing the number of gas supply pipe parts. Further, since two or more kinds of processing gases can be separately supplied in one processing process, plasma can be generated in accordance with the properties of each gas, and as a result, a desired plasma processing is performed on the substrate. be able to.

  As described above, according to the present invention, it is possible to provide a plasma processing apparatus and a plasma processing method for supplying a processing gas into a processing container using a plurality of gas supply pipe parts.

  Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the present specification and drawings, components having substantially the same functional configuration are denoted by the same reference numerals, and redundant description is omitted.

(Configuration of microwave plasma processing equipment)
First, the configuration of a microwave plasma processing apparatus according to an embodiment of the present invention will be described with reference to FIG. FIG. 1 is a cross-sectional view of the microwave plasma processing apparatus 100 cut along a plane parallel to the x-axis direction and the z-axis direction. The microwave plasma processing apparatus 100 is an example of a plasma processing apparatus. In the present embodiment, an example in which an amorphous silicon film (a-Si) is generated by the microwave plasma processing apparatus 100 will be described.

  The microwave plasma processing apparatus 100 has a casing composed of a processing container 10 and a lid 20. The processing container 10 has a bottomed rectangular parallelepiped shape with an open top and is grounded. The processing container 10 is made of a metal such as aluminum (Al). A susceptor 11, which is a mounting table on which, for example, a glass substrate W (hereinafter referred to as “substrate W”) is mounted, is provided at approximately the center in the processing container 10. The susceptor 11 is made of aluminum nitride, for example.

  Inside the susceptor 11, a power feeding unit 11a and a heater 11b are provided. A high frequency power supply 12b is connected to the power supply unit 11a via a matching unit 12a (for example, a capacitor). In addition, a high-voltage DC power supply 13b is connected to the power supply unit 11a via a coil 13a. The matching unit 12a, the high-frequency power source 12b, the coil 13a, and the high-voltage DC power source 13b are provided outside the processing vessel 10, and the high-frequency power source 12b and the high-voltage DC power source 13b are grounded.

  The power feeding unit 11a applies a predetermined bias voltage to the inside of the processing container 10 by the high frequency power output from the high frequency power source 12b. Further, the power feeding unit 11a electrostatically attracts the substrate W by a DC current output from the high-voltage DC power supply 13b.

  An AC power supply 14 provided outside the processing container 10 is connected to the heater 11b, and the substrate W is held at a predetermined temperature by an AC current output from the AC power supply 14.

  The bottom surface of the processing container 10 is opened in a cylindrical shape, and one end of the bellows 15 is mounted toward the outside of the processing container 10 in the vicinity of the opened outer periphery. A lifting plate 16 is fixed to the other end of the bellows 15. In this way, the opening at the bottom of the processing vessel 10 is sealed by the bellows 15 and the lifting plate 16.

  The susceptor 11 is supported by a cylindrical body 17 fixed on the lifting plate 16 and moves up and down integrally with the lifting plate 16 and the cylindrical body 17. Thereby, the susceptor 11 is adjusted to a height corresponding to the processing process.

  A rectifying plate 18 is provided around the susceptor 11 to control the gas flow in the processing container to a preferable state. A gas discharge pipe 19 connected to a vacuum pump (not shown) is provided on the bottom surface of the processing container 10. The vacuum pump is configured to exhaust the inside of the treatment container to a desired degree of vacuum by discharging the gas in the processing container from the gas discharge pipe 19.

  The lid 20 is disposed so as to seal the processing container 10 above the processing container 10. The lid 20 is formed of a metal such as aluminum (Al), for example, in the same manner as the processing container 10. The lid 20 is grounded in the same manner as the processing container 10. The lid 20 is provided with a lid body 21, waveguides 22a to 22f, slot antennas 23a to 23f, and dielectrics 24a to 24f.

  The processing container 10 and the lid body 20 are fixed so as to maintain airtightness by an O-ring 25 disposed between the lower surface outer peripheral portion of the lid main body 21 and the upper surface outer peripheral portion of the processing container 10. The waveguide 22a to the waveguide 22f described above are formed in the lower part of the lid body 21.

  The waveguides 22a to 22f are formed by rectangular waveguides having a rectangular cross-sectional shape perpendicular to the axial direction. As shown in FIG. It is connected to the generator 29f. For example, in the TE10 mode (TE wave: transverse electric wave), the wide tube wall of the waveguide 22 is an H plane parallel to the magnetic field, and the narrow tube wall is an electric field. Parallel E plane. How to arrange the long side direction (width of the waveguide) and the short side direction of the surface cut in the direction perpendicular to the axial direction (longitudinal direction) of the waveguide 22 depends on the mode (inside the waveguide). Depending on the electromagnetic field distribution).

  The slot antenna 23a to the slot antenna 23f in FIG. 1 are provided below the waveguides 22a to 22f, respectively. Slot antenna 23a to slot antenna 23f are made of a metal such as aluminum (Al), for example. The slot antenna 23a to the slot antenna 23f are each provided with a plurality of slots (openings).

Dielectrics 24a to 24f are provided below the slot antennas 23a to 23f, respectively. Each dielectric 24 is made of, for example, quartz, alumina (aluminum oxide: Al ₂ O ₃ ) or the like so as to transmit microwaves.

  The dielectrics 24a to 24f are respectively supported at both ends by beams 26a to 26g made of metal such as aluminum. Further, support members 27a to 27g made of metal are respectively fixed to the lower portions of the beams 26a to 26g, and constitute gas supply pipe parts (gas supply mechanism (for example, gas shower head)). The gas pipes 28 are supported at both ends of the gas pipes 28a to 28f, which are parts as one unit. The distance between the dielectric 24 and the gas pipe 28 is about 25 mm. Further, the distance between the dielectric 24 and the susceptor 11 is about 70 mm to 210 mm.

The gas pipe 28 is made of a dielectric such as alumina (aluminum oxide: Al ₂ O ₃ ). For this reason, compared with the conventional case where the gas pipe 28 is made of metal, the influence of the sheath on the surface of the gas pipe 28 is less, so that the electromagnetic field near the surface of the gas pipe 28 is not disturbed and the distribution of plasma generation is distorted. There is no. As a result, more uniform plasma can be generated. Further, the problem that occurred when the gas shower head was made of metal, that is, the gas pipe 28 was thermally deformed (for example, the gas supply pipe parts were broken or melted by the heat of the plasma), or the gas pipe 28 was plasma-treated. The problem of corrosion inside can be solved.

  The gas pipe 28 is tubular and has a diameter of about 8 mm. Further, as shown in FIG. 2, which is a view of the gas pipe 28 side from the susceptor 11 side, each gas pipe 28 is provided with pores (pores) for supplying gas into the processing container. The diameter of the pore is about 0.5 mm.

  In this way, the dielectric gas pipe 28 is supported by the support 27, whereby the rigidity of the entire gas shower head can be maintained, and the area of the gas shower head can be increased by increasing the number of gas pipes 28. be able to. In addition, when the gas pipe 28 is defective, such as when the gas pipe 28 is deteriorated due to ion collision during the processing process, only the defective part needs to be replaced, and the entire gas shower head is replaced. do not have to. As a result, maintenance management of the microwave plasma processing apparatus 100 can be facilitated and costs required for maintenance of the microwave plasma processing apparatus 100 can be reduced.

  Further, since the support 27 is made of metal, heat can be released from the dielectric gas pipe 28 having low thermal conductivity to the metal support 27 and metal beam 26 having high thermal conductivity. As a result, it is possible to prevent the gas pipe 28 from becoming high temperature due to plasma heat or the like during the process.

  With the configuration described above, for example, a 2.45 GHz microwave output from the microwave generator 29a to the microwave generator 29f propagates through the waveguide 22a to the waveguide 22f, and is slotted. It passes through the slots provided in the antenna 23a to the slot antenna 23, passes through the dielectrics 24a to 24f, enters the processing container, and propagates to the plurality of gas pipes 28.

(First gas supply means and second gas supply means)
Next, after describing the gas supply mechanism according to the microwave plasma processing apparatus 100 of the present embodiment, the operation of the first gas supply means and the second gas supply means will be described.

  The gas introduction pipe 30a to the gas introduction pipe 30g penetrate the insides of the beams 26a to 26g. As shown in FIG. 1, among the gas introduction pipes 30, one end of the gas introduction pipe 30a, the gas introduction pipe 30c, the gas introduction pipe 30e, and the gas introduction pipe 30g is processed through the first flow path 31a. An argon gas supply source 32a4 in the gas supply source 32 is connected. In addition, a silane gas supply source 32b4 and a hydrogen supply source 32b8 in the processing gas supply source 32 are connected to the gas introduction pipe 30b, the gas introduction pipe 30d, and the gas introduction pipe 30f through the second flow path 31b.

  The processing gas supply source 32 includes a valve 32a1, a mass flow controller 32a2, a valve 32a3, an argon gas supply source 32a4, a valve 32b1, a mass flow controller 32b2, a valve 32b3, a silane gas supply source 32b4, a valve 32b5, a mass flow controller 32b6, and a valve 32b7. And a hydrogen gas supply source 32b8.

The processing gas supply source 32 controls the opening and closing of the valve 32a1, valve 32a3, valve 32b1, valve 32b3, valve 32b5 and valve 32b7, so that argon (Ar) gas (corresponding to the first processing gas), silane (SiH ₄ ) Gas and hydrogen (H ₂ ) gas (corresponding to the second processing gas) are supplied into the processing container. In addition, the mass flow controller 32a2, the mass flow controller 32b2, and the mass flow controller 32b6 are configured to supply a gas having a desired concentration into the processing container by controlling the flow rate of the processing gas supplied by each.

  Also, as shown in part in FIG. 3, the other end of the gas introduction pipe 30a, the gas introduction pipe 30c, the gas introduction pipe 30e, and the gas introduction pipe 30g to which argon gas is supplied, One end of the path A (corresponding to the first path) inside the support body 27a, the support body 27c, the support body 27e, and the support body 27g extending from the front is connected. The other end of the path A opens at the upper part of the gas pipe 28.

  In addition, the other ends of the gas introduction pipe 30b, the gas introduction pipe 30d, and the gas introduction pipe 30f to which silane gas and hydrogen gas are supplied are provided inside the support 27b, the support 27d, and the support 27f extending from each beam 26. One end of the path B (corresponding to the second path) is connected. Further, the other end of the path B is connected to one end of the gas pipe 28 supported by the support body 27.

  Using such a gas supply mechanism, the first gas supply means includes a gas introduction pipe 30a, a gas introduction pipe 30c, a gas introduction pipe 30e, a gas introduction pipe 30g, and each of the gas introduction pipes 30 connected thereto. Argon gas is discharged from the path A into the space between each dielectric 24 and each gas pipe 28.

  The microwave plasma processing apparatus 100 generates plasma P <b> 1 from the argon gas released into the space between each dielectric 24 and each gas pipe 28 by the microwave that has passed through each dielectric 24 and entered the processing container. generate.

  On the other hand, the second gas supply means includes a gas introduction pipe 30b, a gas introduction pipe 30d, a gas introduction pipe 30f, and a fine pipe provided in the gas pipe 28 via each path B connected to the gas introduction pipe 30. Silane gas and hydrogen gas are discharged from the hole to the lower part of the gas pipe 28.

  The microwave plasma processing apparatus 100 consumes energy when generating the plasma P1, and generates plasma P2 from silane gas and hydrogen gas discharged in a shower-like manner at the lower part of the gas pipe 28 by the weakened microwave.

As a result, plasma can be generated strongly against inert argon gas, and active silane gas and hydrogen gas can be converted into plasma moderately. Here, “moderately into plasma” means dissociation to the extent that, for example, the silane gas is dissociated to SiH ₃ radicals and not excessively dissociated to SiH ₂ radicals by a slightly weakened microwave.

  As described above, the two systems of processing gas are separately supplied into the processing container by the first gas supply means and the second gas supply means. Thereby, two or more kinds of processing gases can be separately converted into plasma. A plurality of gas pipes 28 are installed below the supply port for supplying the first processing gas. Thereby, in one processing process, among the processing gases separately converted into plasma, first, the first processing gas is converted into plasma, and the second processing gas is converted into plasma by the plasma. As a result, dissociation of the second processing gas is not promoted, and a desired plasma process can be performed on the substrate.

  On the other hand, for example, when the gas is considered to be dissociated moderately by suppressing the microwave power at the time of incidence, the generated plasma becomes unstable and the dissociation of the gas is not constant. A high-quality amorphous silicon film cannot be produced. However, according to the microwave plasma processing apparatus 100 of the present embodiment, a very good quality amorphous silicon film is generated on the substrate W by the generated plasma P1 and plasma P2 without suppressing the power of the microwave at the time of incidence. be able to.

  As described above, according to the microwave plasma processing apparatus 100 of the present embodiment, the first processing gas (argon gas) is supplied from the first path (path A), and the second processing gas ( Silane gas and hydrogen gas) are supplied from a plurality of gas supply pipe parts (gas pipes 28) via the second path (path B). Thus, a desired plasma treatment can be performed on the substrate by separately generated plasma. Further, since the gas shower head is formed of a plurality of gas supply pipe parts, the area of the gas shower head can be easily increased while maintaining the rigidity of the entire gas shower head.

  The first processing gas described above is preferably an inert gas having a large molecular bond energy. The second processing gas is preferably a reactive gas having a small molecular bond energy. Incidentally, the ionization energy of argon is 15.759 (eV). The molecular bond energy between H and H is 4.48 (eV), and the molecular bond energy between Si and H is 3.2 (eV). Therefore, in the amorphous silicon CVD process, argon having a molecular bond energy larger than that of silane or hydrogen is supplied from the upper part of the processing vessel as the first processing gas, and silane or hydrogen is supplied as the second processing gas from the processing vessel. Supplied from the bottom.

  In each of the above embodiments, the operations of the respective units are related to each other, and can be replaced as a series of operations in consideration of the mutual relationship. Therefore, by replacing in this way, the invention of the plasma processing apparatus described above can be an embodiment of the invention of the plasma processing method.

  As mentioned above, although preferred embodiment of this invention was described referring an accompanying drawing, it cannot be overemphasized that this invention is not limited to the example which concerns. It will be apparent to those skilled in the art that various changes and modifications can be made within the scope of the claims, and these are naturally within the technical scope of the present invention. Understood.

  For example, the plasma processing apparatus is not limited to a microwave plasma processing apparatus, but may be any plasma processing apparatus that diffuses plasma, such as an inductively coupled plasma processing apparatus or an ECR (electron-cyclotron-resonance) plasma processing apparatus.

Further, as the processing gas to be supplied, for example, the first processing gas may be a gas having a large molecular bond energy (for example, an inert gas (argon gas, xenon gas (Xe), etc.) that is easily ionized). The second processing gas may be a gas having a small molecular bond energy (for example, a reactive gas such as silane gas (SiH ₄ ) or hydrogen gas (H ₂ )).

  Further, the first processing gas and the second processing gas are not limited to the film forming gas, and may be an etching gas, a sputtering gas, or the like.

  Moreover, the gas introduction part in this invention may be comprised only from the gas introduction pipe | tube 30a-the gas introduction pipe | tube 30g, and may be comprised only from the 1st flow path 31a and the 2nd flow path 31b, Or you may be comprised from the gas inlet tube 30a-the gas inlet tube 30g, the 1st flow path 31a, and the 2nd flow path 31b.

  In addition, the support body 27 in the present invention may be fixed so as to be movable up and down (expandable) with respect to the processing container 10. According to this, the position of the plurality of gas pipes 28 can be moved up and down by the expansion and contraction of the support 27, and the position where the second processing gas is released can be changed as appropriate. As a result, the second process gas is supplied into the plasma in consideration of the electromagnetic field weakened when the first process gas is turned into plasma and the collision with the plasma generated from the first process gas. Based on the nature of the processing gas to be produced, the gas supply pipe part can be moved to a position where the best plasma is generated. As a result, a more uniform plasma having a low electron temperature (Te) and a high electron density (Ne) can be generated from the second processing gas.

  In addition, either the first path or the second path is provided inside the support body 27a to the support body 27g. However, the present invention is not limited to this, and the support body 27a to the support body 27g are provided with both the first path and the second path therein, and either the first path or the second path. It is also possible to provide a mechanism that can select gas and supply gas to the selected path.

  The plurality of gas supply pipe parts are preferably formed of a dielectric material such as ceramics, quartz (quartz), or glass tube, but may be formed of non-metal such as resin.

  The present invention can be applied to a plasma processing apparatus that supplies a processing gas into a processing container using a plurality of gas supply pipe parts.

It is sectional drawing which showed the plasma processing apparatus concerning one Embodiment of this invention. It is a figure explaining the gas pipe looked up from the lower part of a processing container. It is sectional drawing which showed a part of microwave plasma processing apparatus of FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Processing container 11 Susceptor 20 Lid 22a-22f Waveguide 23a-23f Slot antenna 24a-24f Dielectric 26a-26g Beam 27 Support 28 Gas pipe 29 Microwave generator 30a-30g Gas introduction pipe 31a 1st flow path 31b Second channel 32 Gas supply source 32a4 Argon gas supply source 32b4 Silane gas supply source 32b8 Hydrogen gas supply source 100 Microwave plasma processing apparatus

Claims (7)

A plasma processing apparatus that plasma-processes a substrate by converting a processing gas supplied into a processing container into plasma by a microwave that passes through a dielectric and enters the processing container:
A beam formed from a metal supporting the dielectric;
First and second gas introduction pipes penetrating the beam;
A plurality of gas supply pipe parts made of non-metal;
A plurality of supports formed of metal that respectively support the gas supply pipe parts;
First gas supply means for supplying a first processing gas to the first gas introduction pipe;
A second gas supply means for supplying a second process gas to the second gas introduction pipe,
The plurality of supports are fixed to the beam;
A plasma processing apparatus, wherein a second path connecting the second gas introduction pipe and the gas supply pipe part is provided inside any of the plurality of supports. The plurality of gas supply pipe parts are:
The plasma processing apparatus according to claim 1, wherein the plasma processing apparatus is installed below a supply port to which the first processing gas is supplied.   2. The first path connected to the first gas introduction pipe is provided in a support body in which the second path is not provided among the plurality of support bodies. Or the plasma processing apparatus described in 2. It said plurality of non-metallic forming the gas supply pipe parts, plasma processing apparatus according to claim 1, characterized in that a dielectric. The plurality of gas supply pipe parts are provided with a plurality of pores,
The second gas supply means includes
To any one of claims 1 to 4, characterized in that to release the second process gas in a shower shape into the processing chamber from a plurality of pores provided respectively on the gas supply pipe parts of said plurality of The plasma processing apparatus described. The support is
The plasma processing apparatus according to any one of claims 1 to 5, wherein the plasma processing apparatus is fixed to the processing container so as to be extendable and contractible. A beam formed of a metal supporting a dielectric; first and second gas introduction pipes penetrating the beam; a plurality of gas supply pipe parts formed of a non-metal; fixed to the beam; A plurality of supports made of metal that respectively support the gas supply pipe parts; and a processing gas supplied into the processing container through the dielectric and using the plasma processing apparatus. A plasma processing method in which a substrate is plasmatized by a microwave incident on the substrate and plasma-processed the substrate:
Supplying a first processing gas into the processing container from a first path formed inside any of the plurality of supports and connected to the first gas introduction pipe;
Among the plurality of supports, the second path is formed inside a support that is not provided with the first path, and connects the second gas introduction pipe and the gas supply pipe part. Supplying a second processing gas into the processing vessel from the plurality of gas supply pipe parts;
A plasma processing method comprising:

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