JP6091531B2 - 多波長レーザー装置のシステムおよび方法 - Google Patents
多波長レーザー装置のシステムおよび方法 Download PDFInfo
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- JP6091531B2 JP6091531B2 JP2015000195A JP2015000195A JP6091531B2 JP 6091531 B2 JP6091531 B2 JP 6091531B2 JP 2015000195 A JP2015000195 A JP 2015000195A JP 2015000195 A JP2015000195 A JP 2015000195A JP 6091531 B2 JP6091531 B2 JP 6091531B2
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Classifications
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- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34326—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on InGa(Al)P, e.g. red laser
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Description
本出願は、2010年5月24日出願の米国特許仮出願第61/347,800号の優先権を主張し、当該出願は、あらゆる目的で参照により本明細書に組み込まれる。
5E17〜3E18cm−3のSiドーピングレベルを有する、100nm〜3000nmの厚さのn−GaNクラッド層、
3%〜10%のインジウムのモル分率、および20〜100nmの厚さを有するInGaNから成るnサイドSCH層、
薄い2.5nmを超える、および任意に最大約8nmのGaN障壁によって分離される、少なくとも2つの2.0〜5.5nmのInGaN量子井戸から成る多量子井戸活性領域層、
1%〜10%のインジウムのモル分率、および15〜100nmの厚さを有するInGaNから成る、pサイドSCH層、
12%〜22%のアルミニウムのモル分率、および5〜20nmの厚さを有するAlGaNから成り、Mgでドープされた、電子ブロッキング層、
2E17cm−3〜2E19cm−3のMgドーピングレベルを有する、400nm〜1000nmの厚さを有する、p−GaNクラッディング層、
1E19cm−3〜1E21cm−3のMgドーピングレベルを有する、20nm〜40nmの厚さを有する、p++−GaN接触層。
1.第1の結晶表面領域配向を含む、ガリウムおよび窒素含有基板を提供すること、
2.活性領域を画定すること、
3.活性領域に障壁層を形成すること、
4.選択面積エピタキシャル工程を使用して、活性領域内で複数の光放出層を成長させること(複数の光放出層が、第1の放出層と、第2の放出層とを含み、第1の放出層が、第1の利得ピーク波長を特徴とし、第2の放出層が、第2の利得ピーク波長を特徴とし、第1の利得ピーク波長と、第2の利得ピーク波長との間の差異が、少なくとも10nmである)、
5.第1の放出層を覆う第1のキャビティ部材を形成すること(第1のキャビティ部材が、少なくとも100μmの長さ、および少なくとも0.5μmの幅を特徴とし、かつ第1の波長で第1のレーザー光線を放出するように適合される)、
6.第2の放出層を覆う第2のキャビティ部材を形成すること(第2のキャビティ部材が、少なくとも100μmの長さ、および少なくとも0.5μmの幅を特徴とし、かつ第2の波長で第2のレーザー光線を放出するように適合される)、
7.出力領域を提供すること(第1のレーザー光線および第2のレーザー光線が組み合わされる)。
1.第1の結晶表面領域配向を含む、ガリウムおよび窒素含有基板を提供すること、
2.選択的エッチング工程を実施することによって、第1の活性領域を画定すること、
3.第1の活性領域内に障壁層を形成すること、
4.第1の活性領域内で第1の放出層を成長させること(第1の放出層が、第1の波長を特徴とする)、
5.選択的エッチング工程を実施することによって、第2の活性領域を画定すること、
6.第2の活性面積内で第2の放出層を成長させること(第2の放出層が、第2の波長を特徴とし、第1の利得ピーク波長と、第2の利得ピーク波長との間の差異が、少なくとも10nmである)、
7.第1の放出層を覆う、第1のキャビティ部材を形成すること(第1のキャビティ部材は、少なくとも100μmの長さ、および少なくとも0.5μmの幅を特徴とし、かつ第1の波長で第1のレーザー光線を放出するように適合される)、
8.第2の放出層を覆う、第2のキャビティ部材を形成すること(第2のキャビティ部材が、少なくとも100μmの長さ、および少なくとも0.5μmの幅を特徴とし、かつ第2の波長で第2のレーザー光線を放出するように適合される)、
9.規定領域において第1および第2のレーザー光線を組み合わせるために、第1および第2のキャビティ部材を整合すること。
-青色極性+緑色非極性+赤色*AlInGaP
-青色極性+緑色半極性+赤色*AlInGaP
-青色極性+緑色極性+赤色*AlInGaP
-青色半極性+緑色非極性+赤色*AlInGaP
-青色半極性+緑色半極性+赤色*AlInGaP
-青色半極性+緑色極性+赤色*AlInGaP
-青色非極性+緑色非極性+赤色*AlInGaP
-青色非極性+緑色半極性+赤色*AlInGaP
-青色非極性+緑色極性+赤色*AlInGaP
1.第1の結晶表面領域配向は、半極性であり、第2の結晶表面領域配向は、非極性である;
2.第1の結晶表面領域配向は、半極性であり、第2の結晶表面領域配向は、極性である。
3.第1の結晶表面領域配向は、極性であり、第2の結晶表面領域配向は、非極性である。
4.第1の光放出層は、AlInGaP材料を備え、第1の波長は、赤色を特徴とする。
5.第1の光放出層は、AlInGaP材料を備え、第1の波長は、赤色を特徴とし、第2の結晶表面領域配向は、非極性であり、第2の波長は、緑色を特徴とする。
6.第1の光放出層は、AlInGaP材料を備え、第1の波長は、赤色を特徴とし、第2の結晶表面領域配向は、非極性であり、第2の波長は、青色を特徴とする。
7.第1の光放出層は、AlInGaP材料を備え、第1の波長は、赤色を特徴とし、第2の結晶表面領域配向は、半極性であり、第2の波長は、青色を特徴とする。
8.第1の光放出層 は、AlInGaP材料を備え、第1の波長は、赤色を特徴とし、第2の結晶表面領域配向は、半極性であり、第2の波長は、緑色を特徴とする。
Claims (10)
- {20−21}平面配向を有する、ガリウムおよび窒素含有結晶表面領域と、 前記ガリウムおよび窒素含有結晶表面領域上に形成された活性領域であって、前記活性領域が、少なくとも2つの量子井戸領域を備え、かつ障壁層と、単一の光放出層とを含み、前記光放出層が、発光波長勾配を特徴とし、前記発光波長勾配が、少なくとも5nmの偏差を有する、活性領域と、 前記単一の光放出層の第1の部分に設けられ、かつ{20−21}平面配向に対して実質的にc方向に向く、第1のストライプ部材であって、前記単一の光放出層の前記第1の部分が、第1の波長に関連し、かつ前記第1の波長で青色に関連する第1のレーザー光線を放出するように適合される、第1のストライプ部材と、 前記単一の光放出層の第2の部分に設けられ、かつ{20−21}平面配向に対して実質的にc方向に向く、第2のストライプ部材であって、前記単一の光放出層の前記第2の部分が、第2の波長に関連し、前記第1の波長と前記第2の波長との間の差異が、少なくとも5nmであり、かつ前記第2の波長で緑色に関連する第2のレーザー光線を放出するように適合される、第2のストライプ部材と、 出力領域とを備え、 前記第1のストライプ部材が、第1の端と第2の端を備え、 前記第2のストライプ部材が、第1の端と第2の端を備え、 前記第1のストライプ部材の前記第1の端と前記第2のストライプ部材の前記第1の端が、鏡面を有し、かつ第1の共通の面を共有し、 前記第1のストライプ部材の前記第2の端と前記第2のストライプ部材の前記第2の端が、第2の共通の面を共有する、 光学デバイス。
- 前記光学デバイスはn型クラッディング領域をさらに備え、前記n型クラッディング領域は前記ガリウムおよび窒素含有結晶表面領域上に形成され、前記活性領域は前記n型クラッディング領域上に形成される、請求項1に記載のデバイス。
- 前記第1の共通の面が、第1の劈開面を備え、 前記第2の共通の面が、第2の劈開面を備える、 請求項1に記載のデバイス。
- 第1の表面を有する第1の部材であって、非導電性である、第1の部材と、 前記第1の部材の前記第1の表面上に実装された第1のサブマウントと、 前記第1のサブマウント上に実装された第1の基板であって、前記第1の基板がガリウム及び窒素含有材料を備え、前記第1のガリウム及び窒素含有材料が第1の結晶表面領域と、下部に金属裏面接触領域とを有し、前記第1の結晶表面領域が、{20−21}平面、{20−2−1}平面、{30−31}平面、{30−3−1}平面、またはこれらの平面のうちの一つのオフカットから選択される平面配向を有し、前記金属裏面接触領域が、前記第1のサブマウントに連結される、第1の基板と、 前記第1の結晶表面領域上に形成された第1の活性領域であって、前記ガリウム及び窒素含有材料が、前記第1の活性領域と前記金属裏面接触領域との間に位置し、前記第1の活性領域が、少なくとも2つの量子井戸領域を備え、かつ障壁層と、単一の光放出層とを含み、前記単一の光放出層が、発光波長勾配によって特徴付けられる、第1の活性領域と、 前記単一の光放出層の第1の部分上に設けられ、かつ前記平面配向に対して実質的にc方向に向く、第1のストライプ部材であって、前記単一の光放出層の前記第1の部分が、青色を特徴とする前記第1の波長で第1のレーザー光線を放出するように適合される、第1のストライプ部材と、 前記単一の光放出層の第2の部分上に設けられ、かつ前記平面配向に対して実質的にc方向に向く、第2のストライプ部材であって、前記単一の光放出層の前記第2の部分が、緑色を特徴とする前記第2の波長で第2のレーザー光線を放出するように適合される、第2のストライプ部材と、 前記第1および第2のレーザー光線を組み合わせて、単一レーザー光線にするための光学部材を備える出力領域と、を備える、光学デバイス。
- 前記第1の波長が、約420nm〜490nmであり、
前記第2の波長が、約490nm〜560nmである、
請求項4に記載のデバイス。 - 前記第1の部材の前記第1の表面上に実装された第2の基板であって、第2の結晶表面領域を有する、第2の基板と、
障壁層と光放出層とを備え、前記第2の結晶表面領域上に形成された第2の活性領域であって、前記光放出層が、AlInGaP含有材料を備え、かつ赤色を特徴とする第3の波長に関連する、第3の活性領域と、
前記光放出層上に設けられた第3のストライプ部材であって、前記光放出層が、前記第3の波長で第3のレーザー光線を放出するように適合される、第3のストライプ部材と、
をさらに備える、請求項4に記載のデバイス。 - 前記光学部材が、前記第1および前記第2のレーザー光線を組み合わせるための二色性コーティングを有する光学素子を複数備える、請求項4に記載のデバイス。
- 前記第1の部材の前記第1の表面に連結される、第2のサブマウントと、
前記第2のサブマウント上に実装された第2の基板であって、前記第2の基板は、障壁層と光放出層とを備える第2の活性領域を備え、前記光放出層は第3の波長に関連する、第2の基板と、
前記光放出層上に設けられた第3のストライプ部材であって、前記光放出層が、前記第3の波長で第3のレーザー光線を放出するように適合される、第3のストライプ部材と、
をさらに備える、請求項4に記載のデバイス。 - 前記第1の金属裏面接触領域が、n型金属裏面接触領域を備える、請求項4に記載のデバイス。
- 前記平面配向が、{20−21}平面の+/−8°以内である、請求項4に記載のデバイス。
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