JP6086681B2 - 撮像素子、及び撮像装置 - Google Patents
撮像素子、及び撮像装置 Download PDFInfo
- Publication number
- JP6086681B2 JP6086681B2 JP2012206662A JP2012206662A JP6086681B2 JP 6086681 B2 JP6086681 B2 JP 6086681B2 JP 2012206662 A JP2012206662 A JP 2012206662A JP 2012206662 A JP2012206662 A JP 2012206662A JP 6086681 B2 JP6086681 B2 JP 6086681B2
- Authority
- JP
- Japan
- Prior art keywords
- light receiving
- light
- receiving element
- image
- microlens
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000003384 imaging method Methods 0.000 title claims description 44
- 230000000694 effects Effects 0.000 description 10
- 230000003287 optical effect Effects 0.000 description 7
- 230000004907 flux Effects 0.000 description 6
- 210000001747 pupil Anatomy 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 238000012937 correction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000001131 transforming effect Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N13/00—Stereoscopic video systems; Multi-view video systems; Details thereof
- H04N13/10—Processing, recording or transmission of stereoscopic or multi-view image signals
- H04N13/106—Processing image signals
- H04N13/111—Transformation of image signals corresponding to virtual viewpoints, e.g. spatial image interpolation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B13/00—Optical objectives specially designed for the purposes specified below
- G02B13/001—Miniaturised objectives for electronic devices, e.g. portable telephones, webcams, PDAs, small digital cameras
- G02B13/0015—Miniaturised objectives for electronic devices, e.g. portable telephones, webcams, PDAs, small digital cameras characterised by the lens design
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N13/00—Stereoscopic video systems; Multi-view video systems; Details thereof
- H04N13/20—Image signal generators
- H04N13/204—Image signal generators using stereoscopic image cameras
- H04N13/207—Image signal generators using stereoscopic image cameras using a single 2D image sensor
- H04N13/232—Image signal generators using stereoscopic image cameras using a single 2D image sensor using fly-eye lenses, e.g. arrangements of circular lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14607—Geometry of the photosensitive area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N13/00—Stereoscopic video systems; Multi-view video systems; Details thereof
- H04N13/20—Image signal generators
- H04N13/204—Image signal generators using stereoscopic image cameras
- H04N13/207—Image signal generators using stereoscopic image cameras using a single 2D image sensor
- H04N13/218—Image signal generators using stereoscopic image cameras using a single 2D image sensor using spatial multiplexing
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Testing, Inspecting, Measuring Of Stereoscopic Televisions And Televisions (AREA)
Description
1.4 ≦ (1/p)・[r/(nav2-1)-hb] ≦ 3
であることを特徴とする。
なお、ここでは、
撮像レンズ11のFナンバー:Fn
マイクロレンズ20の曲率半径:r
マイクロレンズ29から受光素子22L、22Rの受光面200までの媒質の平均屈折率:nav
マイクロレンズ20のピッチ:p
である。
式(9): Fn = (1/p)・[r/(nav2-1)-hb]
第1実施例では、
・マイクロレンズ20の曲率半径:r = 0.01mm(球面)
・マイクロレンズ29のピッチ:p = 0.01mm
・マイクロレンズ20から配線層38上面高さまでの媒質の平均屈折率:nav2 = 1.5
・マイクロレンズから受光素子22L、22Rの受光面200までの媒質の平均屈折率:nav = 1.5
・配線層38の高さ:hb = 0.006mm
とする。ここで、配線層38はアルミなどの金属製であり、光に対して実質的に不透明である。第1実施例では、式(9)から、F1.4までの明るさの撮像レンズ11を使用しても、隣の絵素の受光素子に光束が到達しない。よって、F1.4という比較的明るい撮像レンズ11を使用しても、立体撮像画像の解像度の低下や、色ずれなどの不具合発生を回避できる。
第2実施例では、
・マイクロレンズ20の曲率半径:r = 0.015mm(球面)
・マイクロレンズ20のピッチ:p = 0.01mm
・マイクロレンズ20から配線層38上面高さまでの媒質の平均屈折率:nav2 = 1.5
・マイクロレンズ20から受光素子22L、22Rの受光面200までの媒質の平均屈折率:nav = 1.5
・配線層38の高さ:hb = 0.015mm
とする。ここで、配線層38はアルミなどの金属製であり、光に対して実質的に不透明である。第2実施例では、式(9)から、F1.5までの明るさの撮像レンズ11を使用しても、隣の絵素の受光素子に光束が到達しない。よって、F1.5という比較的明るい撮像レンズ11を使用しても、立体撮像画像の解像度の低下や、色ずれなどの不具合発生を回避できる。
第3実施例では、
・マイクロレンズ20の曲率半径:r = 0.02mm(球面)
・マイクロレンズ20のピッチ:p = 0.01mm
・マイクロレンズ20から配線層38上面高さまでの媒質の平均屈折率:nav2 = 1.6
・マイクロレンズ20から受光素子22L、22Rの受光面200までの媒質の平均屈折率:nav = 1.6
・配線層38の高さ:hb = 0.0033mm
とする。ここで、配線層38はアルミなどの金属製であり、光に対して不透明である。第3実施例では、式(9)からF3までの明るさの撮像レンズ11を使用しても、隣接する他の絵素の受光素子に当該絵素のマイクロレンズ20を通過した光束が到達しない。よって、F3という比較的明るい撮像レンズ11を使用しても、立体撮像画像の解像度の低下や、色ずれなどの不具合発生を回避できる。
11 撮像レンズ
20 マイクロレンズ
22 受光素子対
38 配線層
Claims (3)
- 二次元状に配列されたレンズごとに配置され被写体からの光を受光する受光素子対であって、一方の受光素子が、前記被写体の立体撮像画像を表示するための視差を有する撮像画像対のうちの一方を構成する画素信号を出力し、他方の側の受光素子が、前記撮像画像対のうちの他方を構成する画素信号を出力する、受光素子対と、
前記受光素子の入力信号または出力信号を伝送する、前記受光素子間に配設された配線とを有し、
前記レンズのそれぞれの曲率半径をr、
前記レンズの間隔をp、
前記レンズと前記配線の間の媒質の平均屈折率をnav2、
前記配線の、前記受光素子の受光面からの距離をhbとしたとき、
1.4 ≦ (1/p)・[r/(nav2-1)-hb] ≦ 3
であることを特徴とする撮像素子。 - 請求項1において、
前記配線は、前記受光素子対同士の間に配設される、
撮像素子。 - 請求項1または2に記載の撮像素子と、
請求項1または2に記載の前記撮像画像対に基づく立体撮像画像を表示する表示部とを有する撮像装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012206662A JP6086681B2 (ja) | 2012-09-20 | 2012-09-20 | 撮像素子、及び撮像装置 |
PCT/JP2013/005566 WO2014045592A1 (ja) | 2012-09-20 | 2013-09-20 | 撮像素子、及び撮像装置 |
US14/663,096 US9819924B2 (en) | 2012-09-20 | 2015-03-19 | Image pickup element and image pickup apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012206662A JP6086681B2 (ja) | 2012-09-20 | 2012-09-20 | 撮像素子、及び撮像装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014064080A JP2014064080A (ja) | 2014-04-10 |
JP6086681B2 true JP6086681B2 (ja) | 2017-03-01 |
Family
ID=50340928
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012206662A Expired - Fee Related JP6086681B2 (ja) | 2012-09-20 | 2012-09-20 | 撮像素子、及び撮像装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9819924B2 (ja) |
JP (1) | JP6086681B2 (ja) |
WO (1) | WO2014045592A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10469730B2 (en) * | 2016-05-18 | 2019-11-05 | Canon Kabushiki Kaisha | Imaging device and control method for simultaneously outputting an image pickup signal and a parallax image signal |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6396873B1 (en) | 1999-02-25 | 2002-05-28 | Envision Advanced Medical Systems | Optical device |
JP5066851B2 (ja) * | 2006-07-05 | 2012-11-07 | 株式会社ニコン | 撮像装置 |
JP4505488B2 (ja) * | 2007-09-05 | 2010-07-21 | シャープ株式会社 | 固体撮像素子および電子情報機器 |
JP2009065095A (ja) * | 2007-09-10 | 2009-03-26 | Nikon Corp | 固体撮像素子 |
US20090219432A1 (en) | 2008-02-29 | 2009-09-03 | Palum Russell J | Sensor with multi-perspective image capture |
JP5025746B2 (ja) * | 2010-03-19 | 2012-09-12 | 株式会社東芝 | 固体撮像装置 |
WO2012042963A1 (ja) * | 2010-09-29 | 2012-04-05 | 富士フイルム株式会社 | 固体撮像素子及び撮像装置 |
-
2012
- 2012-09-20 JP JP2012206662A patent/JP6086681B2/ja not_active Expired - Fee Related
-
2013
- 2013-09-20 WO PCT/JP2013/005566 patent/WO2014045592A1/ja active Application Filing
-
2015
- 2015-03-19 US US14/663,096 patent/US9819924B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20150195503A1 (en) | 2015-07-09 |
WO2014045592A1 (ja) | 2014-03-27 |
US9819924B2 (en) | 2017-11-14 |
JP2014064080A (ja) | 2014-04-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5879549B2 (ja) | ライトフィールド撮像装置、および画像処理装置 | |
JP5538553B2 (ja) | 固体撮像素子及び撮像装置 | |
US8325241B2 (en) | Image pickup apparatus that stores adjacent and contiguous pixel data before integration of same | |
CN102917235B (zh) | 图像处理装置和图像处理方法 | |
JP5227368B2 (ja) | 3次元撮像装置 | |
JP2011176715A (ja) | 裏面照射型撮像素子および撮像装置 | |
JP2015230355A (ja) | 撮像装置および撮像素子 | |
JP2010154493A (ja) | 撮像装置 | |
US9190436B2 (en) | Imaging apparatus | |
CN104025584A (zh) | 彩色摄像元件及摄像装置 | |
JP5507362B2 (ja) | 3次元撮像装置および光透過板 | |
US9554116B2 (en) | Image pickup element and image pickup apparatus | |
JP5634614B2 (ja) | 撮像素子及び撮像装置 | |
JP6234024B2 (ja) | 撮像素子、及び撮像装置 | |
JP6086681B2 (ja) | 撮像素子、及び撮像装置 | |
JP6929511B2 (ja) | 撮像素子、及び、撮像装置 | |
JP5810196B2 (ja) | 撮像装置 | |
US20150319413A1 (en) | Image pickup element and image pickup apparatus | |
JP2017005509A (ja) | 固体撮像素子、撮像装置、および測距装置 | |
JP5853510B2 (ja) | 撮像装置 | |
JP2014215405A (ja) | 撮像素子及び顕微鏡装置 | |
JP2015161727A (ja) | 撮像素子および撮像装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20150827 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20161018 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20161125 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20170110 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20170131 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 6086681 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |