JP6078171B2 - Plasma assisted physical vapor deposition source - Google Patents
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- JP6078171B2 JP6078171B2 JP2015555090A JP2015555090A JP6078171B2 JP 6078171 B2 JP6078171 B2 JP 6078171B2 JP 2015555090 A JP2015555090 A JP 2015555090A JP 2015555090 A JP2015555090 A JP 2015555090A JP 6078171 B2 JP6078171 B2 JP 6078171B2
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- 238000005240 physical vapour deposition Methods 0.000 title claims description 34
- 239000012212 insulator Substances 0.000 claims description 7
- 230000000903 blocking effect Effects 0.000 claims description 6
- 238000001704 evaporation Methods 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 description 12
- 238000007740 vapor deposition Methods 0.000 description 11
- 239000000758 substrate Substances 0.000 description 9
- 239000002245 particle Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- 229910004261 CaF 2 Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 230000009191 jumping Effects 0.000 description 1
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Inorganic materials [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 150000003346 selenoethers Chemical class 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Description
本発明は、プラズマを用いた物理気相蒸着源に関し、高真空で薄膜を形成する熱的物理気相蒸着源(Thermal Physical Vapor Deposition)にプラズマを結合する技術に関する。 The present invention relates to a physical vapor deposition source using plasma, and relates to a technique for coupling plasma to a thermal physical vapor deposition source (Thermal Physical Vapor Deposition) that forms a thin film in a high vacuum.
一般に、乾式メッキ法の一種であるPVD(Physical Vapor Deposition)法はその原理によって蒸発(Evaporation）とスパッタリング(Sputtering)、イオンプレーティング(Ion plating)などに大別されるが、装飾用から超硬のような工業用、そして電子分野に至るまで幅広く用いられる蒸着法である。 Generally, the PVD (Physical Vapor Deposition) method, which is a kind of dry plating method, is roughly divided into evaporation, sputtering, ion plating, etc. according to its principle. It is a vapor deposition method that is widely used in industrial and electronic fields.
熱を利用した物理的気相蒸着(Thermal Vapor Deposition)技術は、一般に高真空下にて進行され、このため、プラズマを同時に利用することは不可能であった。その理由は次の通りである。 The thermal vapor deposition technique using heat generally proceeds under a high vacuum, and thus it is impossible to use plasma simultaneously. The reason is as follows.
一般的な熱的物理気相蒸着源は、高真空で使われるため、チャンバー内の粒子がプラズマを発生させるには充分でない環境で使われる。プラズマを発生させるためにチャンバーの真空度を低くする場合には、雰囲気圧力と材料の蒸気圧との差が小さくなり、蒸発率が下がるようになる。蒸発率の低下を防止するために蒸着源の温度を上げる場合には、蒸着源の輻射熱により基板の温度が上がってしまい、低温工程を必要とする製品には使用するのが難しい。 Common thermal physical vapor deposition sources are used in high vacuums, so they are used in environments where the particles in the chamber are not sufficient to generate a plasma. When the degree of vacuum in the chamber is lowered in order to generate plasma, the difference between the atmospheric pressure and the vapor pressure of the material is reduced, and the evaporation rate is reduced. When raising the temperature of a vapor deposition source in order to prevent the evaporation rate from decreasing, the temperature of the substrate rises due to the radiant heat of the vapor deposition source, making it difficult to use for products that require a low temperature process.
また、基板に別途の加熱装置を設置しない限り、蒸着される粒子は蒸着源の温度に該当するエネルギーのみを有するようになり、この場合、蒸着される粒子は十分なエネルギーを有することができず、良質の薄膜を形成し難いという問題点がある。 Further, unless a separate heating device is installed on the substrate, the deposited particles have only energy corresponding to the temperature of the deposition source, and in this case, the deposited particles cannot have sufficient energy. There is a problem that it is difficult to form a high-quality thin film.
本発明は、このような問題点を解決するために、物理気相蒸着源をプラズマ補助物理気相蒸着源で構成し、このために、蒸着源のノズルの形状を特別にし、これにより内部圧力を調節した。これに対しては、以下にて詳細に説明する。 In order to solve such problems, the present invention is configured such that the physical vapor deposition source is a plasma-assisted physical vapor deposition source, and for this purpose, the shape of the nozzle of the vapor deposition source is made special, thereby reducing the internal pressure. Adjusted. This will be described in detail below.
本発明は、このような従来技術の問題点を次のように解決した。その方法は、チャンバーの圧力はプラズマを生成するための条件を満たすのが難しいが、蒸発する材料の場合、蒸着源のノズルの形状により内部圧力を調節できるので、これを利用して蒸着源の内部をプラズマの発生に適合した圧力に維持してプラズマを発生させることである。 The present invention has solved such problems of the prior art as follows. In this method, it is difficult for the chamber pressure to satisfy the conditions for generating plasma, but in the case of a material that evaporates, the internal pressure can be adjusted depending on the shape of the nozzle of the deposition source. The inside is maintained at a pressure suitable for plasma generation to generate plasma.
蒸着源の内部にプラズマが発生する場合、蒸発する粒子がプラズマと反応して蒸着源の熱エネルギーに加えてプラズマによるエネルギーを有するようになる。そうすると、基板に追加の加熱なしに、良質の薄膜を得ることができる。 When plasma is generated inside the deposition source, the evaporated particles react with the plasma and have energy from the plasma in addition to the thermal energy of the deposition source. Then, a good quality thin film can be obtained without additional heating of the substrate.
本発明の一実施例に係るプラズマ補助物理気相蒸着源は、内部にプラズマの発生空間を有する坩堝、前記坩堝の上面に形成されているノズル、前記坩堝の長さ方向に沿って坩堝の内部に一定の長さだけ挿入されているプラズマ発生用の電極、前記プラズマ発生用の電極に連結されたプラズマ発生用電源装置、前記プラズマ発生用の電極の下部の一部分を取り囲んで坩堝内部の一部分を満たす絶縁体、及び前記絶縁体上に積まれてある蒸発物質を含み、前記ノズルはノズルの大きさを変更でき、これにより前記坩堝内部のプラズマの発生空間でプラズマの発生可能圧力が維持されることを特徴とする。 A plasma-assisted physical vapor deposition source according to an embodiment of the present invention includes a crucible having a plasma generation space therein, a nozzle formed on an upper surface of the crucible, and the inside of the crucible along the length direction of the crucible. A plasma generating electrode inserted into the plasma generating electrode by a certain length, a plasma generating power source connected to the plasma generating electrode, and a portion inside the crucible surrounding a part of the lower portion of the plasma generating electrode. A filling insulator and an evaporating material stacked on the insulation, the nozzle being able to change the size of the nozzle, thereby maintaining a plasma generating pressure in the plasma generation space inside the crucible; It is characterized by that.
この場合、前記坩堝の外周に配置されたヒーターをさらに含むことができ、また、ヒーターの外周に配置された遮断構造物をさらに含むことができる。このような前記坩堝、前記ヒーター及び前記遮断構造物を全て内部に収納している本体をさらに含むことができる。 In this case, a heater disposed on the outer periphery of the crucible can be further included, and a blocking structure disposed on the outer periphery of the heater can be further included. The crucible, the heater, and the shut-off structure may be further included in the main body.
プラズマ発生用の電極は、その一部分を前記坩堝内のプラズマの発生空間にまで挿入することができる。 A part of the electrode for generating plasma can be inserted into the plasma generation space in the crucible.
プラズマの発生可能圧力の範囲は、10-3mTorr以上であることが好ましい。 The range of the pressure at which plasma can be generated is preferably 10 −3 mTorr or more.
ノズルの大きさは、ノズルの孔の大きさを調節するノズル孔調節部により調節することができる。 The size of the nozzle can be adjusted by a nozzle hole adjusting unit that adjusts the size of the nozzle hole.
本発明によれば、高真空下で蒸着する場合にも蒸着源の内部の圧力はプラズマの発生が可能な圧力であり、ノズルの形状を調節することによって蒸着源の内部の圧力を調整することができる。プラズマの発生はRF、マイクロ波、DCパルスなどの多様な方法により実現される。 According to the present invention, even when vapor deposition is performed under high vacuum, the pressure inside the vapor deposition source is a pressure capable of generating plasma, and the pressure inside the vapor deposition source is adjusted by adjusting the shape of the nozzle. Can do. Plasma generation is realized by various methods such as RF, microwave, and DC pulse.
蒸着源の内部でのみプラズマを発生させることによって、プラズマによる基板の温度上昇や、プラズマの荷電粒子による基板の損傷などの問題も発生しない。 By generating plasma only inside the vapor deposition source, problems such as temperature rise of the substrate due to plasma and damage to the substrate due to charged particles of the plasma do not occur.
以下、添付した図面を参照して各実施例を説明する。図において、類似の符号は類似の要素を示すために用いられる。説明のため、本明細書において、多様な説明が本発明の理解を助けるために提示される。しかし、このような各実施例はこのような特定の説明がなくても実行できることは明白である。他の例において、公知となった構造及び装置は実施例の説明を容易にするために、ブロックダイアグラムの形態で提示される。 Embodiments will be described below with reference to the accompanying drawings. In the figures, similar symbols are used to indicate similar elements. For purposes of explanation, various descriptions are provided herein to assist in understanding the present invention. However, it is clear that each such embodiment can be practiced without such specific explanation. In other instances, well-known structures and devices are presented in block diagram form in order to facilitate describing the embodiments.
以下の説明は、本発明の実施例に対する基本的な理解を提供するために、一つ以上の実施例の簡略化された説明を提供する。本セクションは実施できるあらゆる実施例に対する包括的な概要ではなく、全ての要素中の核心要素を識別したり、あらゆる実施例の範囲をカバーしようとする意図もない。その唯一の目的は、後述する詳細な説明に対する導入部として、簡略化された形態で、一つ以上の実施例の概念を提供することである。 The following description provides a simplified description of one or more embodiments in order to provide a basic understanding of the embodiments of the invention. This section is not an exhaustive overview of all possible implementations, nor is it intended to identify key elements in all elements or cover the scope of any implementation. Its sole purpose is to provide one or more concepts in a simplified form as a prelude to the more detailed description that is presented later.
図１は、従来のPVDチャンバーを概略的に示す構成図である。ターゲット１０は、ディスク(Disk)またはプレート(Plate)タイプになっており、プロセス気体の供給部４０から供給されるプロセス気体(アルゴン(Ar)ガス)と衝突によって表面の原子が飛び出るようになっている。 FIG. 1 is a block diagram schematically showing a conventional PVD chamber. The target 10 is of a disk type or a plate type, and atoms on the surface come out by collision with the process gas (argon (Ar) gas) supplied from the process gas supply unit 40. Yes.
金属ターゲット１０の下部には、ヒーター３０の上部にウエハーWが設置されていて、金属ターゲット１０から飛び出てきた原子がウエハーWに蒸着されるようになっている。前記金属ターゲット１０の上部には、マグネット２０が設置されており、図示していない回転手段により前記マグネット２０が回転しながら磁場を発生させ、その磁場によりプロセス気体が金属ターゲット１０の表面に衝突するようになる。 Below the metal target 10, a wafer W is installed above the heater 30, and atoms jumping out from the metal target 10 are deposited on the wafer W. A magnet 20 is installed on the metal target 10. A magnetic field is generated while the magnet 20 is rotated by a rotating means (not shown), and the process gas collides with the surface of the metal target 10 by the magnetic field. It becomes like this.
本発明の目的は、既存の熱を利用した物理的蒸着源にプラズマの発生源を結合して、蒸着粒子に蒸着源の熱エネルギーに加えてプラズマによるエネルギーを持たせて蒸着膜の品質を向上させるプラズマ補助物理気相蒸着源(Plasma Aided physical Vapor Deposition Source）を提供することである。 The purpose of the present invention is to improve the quality of the deposited film by combining the plasma generation source with the existing physical vapor deposition source using heat and giving the deposited particles energy by plasma in addition to the thermal energy of the vapor deposition source. It is to provide a plasma assisted physical vapor deposition source.
このような目的を達成するために、通常のPVDチャンバーとは異なり、本発明に係るプラズマ補助物理気相蒸着源１は、内部にプラズマの発生空間２００を有する坩堝１００、坩堝の上面に形成されているノズル３００、坩堝の長さ方向に沿って坩堝の内部に一定の長さだけ挿入されているプラズマ発生用の電極４００、プラズマ発生用の電極４００に連結されたプラズマ発生用電源装置５００、プラズマ発生用の電極４００の下部の一部分を取り囲んで坩堝内部の一部分を満たす絶縁体６００、及び絶縁体上に積まれてある蒸発物質を含む。 In order to achieve such an object, unlike a normal PVD chamber, a plasma-assisted physical vapor deposition source 1 according to the present invention is formed on a crucible 100 having a plasma generation space 200 therein and on the upper surface of the crucible. A nozzle 300, a plasma generating electrode 400 inserted into the crucible by a certain length along the length of the crucible, a plasma generating power supply device 500 connected to the plasma generating electrode 400, The insulator 600 surrounds a part of the lower part of the electrode 400 for plasma generation and fills a part of the inside of the crucible, and an evaporated material stacked on the insulator.
このような構成は、本発明の一実施例に係るプラズマ補助物理気相蒸着源の断面図を示している図２によく示されている。 Such a configuration is well illustrated in FIG. 2, which shows a cross-sectional view of a plasma assisted physical vapor deposition source according to one embodiment of the present invention.
坩堝１００は、その内部にプラズマの発生空間２００を含んでおり、このプラズマの発生空間でプラズマが発生するようになる。プラズマの発生は、既存の熱的物理蒸着源(Thermal Physical vapor deposition source)にプラズマ発生用の電極４００を挿入可能な構造に形成して(図２参照)、坩堝内部のプラズマの発生空間でプラズマの発生がなされる。 The crucible 100 includes a plasma generation space 200 therein, and plasma is generated in the plasma generation space. The plasma is generated in such a structure that an electrode 400 for plasma generation can be inserted into an existing thermal physical vapor deposition source (see FIG. 2), and the plasma is generated in the plasma generation space inside the crucible. Is generated.
坩堝の上面に形成されているノズル３００は、プラズマの発生空間で発生されたプラズマが坩堝の外部に排出される通路の役割をする。この場合、ノズルの大きさを調整すればプラズマ補助物理気相蒸着源の内部の圧力を変化させることができる。ノズルの大きさの変更により、坩堝内部のプラズマの発生空間でプラズマの発生可能圧力が維持できる。プラズマの発生可能圧力の範囲は10-3mTorr以上であることが好ましい。したがって、所望の工程に応じて、所望のノズルの大きさを適切に選択して使用することができる。このようなノズルの大きさを選択するために、後述するように、図４ではノズルの大きさを調節する構成を開示している。 The nozzle 300 formed on the upper surface of the crucible serves as a passage through which the plasma generated in the plasma generation space is discharged to the outside of the crucible. In this case, the pressure inside the plasma-assisted physical vapor deposition source can be changed by adjusting the size of the nozzle. By changing the size of the nozzle, the plasma generation pressure can be maintained in the plasma generation space inside the crucible. The range of the pressure at which plasma can be generated is preferably 10 −3 mTorr or more. Therefore, a desired nozzle size can be appropriately selected and used according to a desired process. In order to select such a nozzle size, FIG. 4 discloses a configuration for adjusting the nozzle size, as will be described later.
プラズマ発生用の電極４００は、図２に示すように、坩堝内部に坩堝の長さ方向に沿って一定の長さだけ挿入されている。この場合、プラズマ発生用の電極はその一部分が前記坩堝内のプラズマの発生空間にまで挿入されていてもよい。 As shown in FIG. 2, the plasma generating electrode 400 is inserted into the crucible by a certain length along the length direction of the crucible. In this case, a part of the electrode for plasma generation may be inserted into the plasma generation space in the crucible.
プラズマ発生用の電極４００は、プラズマ発生用電源装置５００と連結されている。プラズマ発生用電源はDC、RF、MWなどが可能であり、図２ではMW(micro wave)を利用して発生させる例として同軸構造の電極を坩堝内部に挿入できるように配置した形状を図示している。 The plasma generating electrode 400 is connected to the plasma generating power supply device 500. The power source for plasma generation can be DC, RF, MW, etc. Fig. 2 shows a configuration in which coaxial electrodes are placed inside the crucible as an example of generation using MW (micro wave). ing.
また、電極の形状も同軸構造の形状を図示しているが、その他に多様な形状の電極が利用可能である。 Moreover, although the shape of the electrode also illustrates the shape of the coaxial structure, various other shapes of electrodes can be used.
絶縁体６００は、プラズマ発生用の電極４００の下部の一部分を取り囲んで坩堝内部の一部分を満たしている。絶縁体は２０００未満の誘電定数を有する絶縁性の物質が好ましいが、その例としては、MgO、MgF2、LiF、CaF2、アルミナ、ガラス、セラミック、酸化マグネシウムなどがある。 The insulator 600 surrounds a part of the lower part of the plasma generating electrode 400 and fills a part of the crucible. The insulator is preferably an insulating material having a dielectric constant of less than 2000. Examples thereof include MgO, MgF 2 , LiF, CaF 2 , alumina, glass, ceramic, and magnesium oxide.
蒸発物質は、アルミニウム、マグネシウム、銀、ガリウム、銅、インジウム、セレナイドなどが可能であり、特に制限されるものではない。 The evaporating material can be aluminum, magnesium, silver, gallium, copper, indium, selenide, etc., and is not particularly limited.
図２に示すように、蒸発物質を坩堝の中に入れた後、プラズマ発生用電源により電圧が印加されるとプラズマの発生空間でプラズマが発生され、発生されたプラズマはノズルを通して排出される。このように物理蒸着源の内部でプラズマの発生ができる構造を形成することによって、プラズマ補助物理気相蒸着がなされることを可能にし、これにより基板に追加の加熱なしに、良質の薄膜を得ることができる。 As shown in FIG. 2, after putting the evaporated substance into the crucible, when a voltage is applied by the plasma generation power source, plasma is generated in the plasma generation space, and the generated plasma is discharged through the nozzle. Thus, by forming a structure capable of generating plasma inside the physical vapor deposition source, it is possible to perform plasma assisted physical vapor deposition, thereby obtaining a good quality thin film without additional heating to the substrate. be able to.
また、蒸着源の内部でのみプラズマを発生させることによって、プラズマによる基板の温度上昇や、プラズマの荷電粒子による基板の損傷などの問題も発生しない。 Further, by generating plasma only inside the vapor deposition source, problems such as temperature rise of the substrate due to plasma and damage to the substrate due to charged particles of plasma do not occur.
一方、坩堝の外周に配置されたヒーター７００をさらに含むことができ、ヒーターの外周に配置された遮断構造物８００をさらに含むことができる。また、本体は、坩堝１００、ヒーター７００及び遮断構造物８００を全て内部に収納することができる。 Meanwhile, a heater 700 disposed on the outer periphery of the crucible may be further included, and a blocking structure 800 disposed on the outer periphery of the heater may be further included. Moreover, the main body can accommodate the crucible 100, the heater 700, and the interruption | blocking structure 800 in all.
ヒーター７００は坩堝を加熱して温度を上げる役割をする部分であり、遮断構造物８００は坩堝を加熱し、不要な部分は加熱しないように輻射熱を遮断する構造物である。 The heater 700 is a part that heats the crucible and raises the temperature, and the blocking structure 800 is a structure that blocks the radiant heat so that the crucible is heated and unnecessary portions are not heated.
図３は、本発明の一実施例に係るプラズマ補助物理気相蒸着源の使用斜視図である。 FIG. 3 is a perspective view of the use of a plasma-assisted physical vapor deposition source according to an embodiment of the present invention.
図２によるプラズマ補助物理気相蒸着源１は、プラズマ発生用電源装置５００に連結されたままチャンバーの内部に挿入されており、チャンバーの内部にはノズルに対向した位置に処理対象の基板が存在する。ノズル３００はその大きさを調節できる構成を有することによって、プラズマ物理気相蒸着源の内部圧力をプラズマの発生が可能な圧力(10−3mTorr以上)に調節可能にする。 The plasma-assisted physical vapor deposition source 1 according to FIG. 2 is inserted into the chamber while being connected to the plasma generating power supply device 500, and the substrate to be processed exists at a position facing the nozzle in the chamber. To do. The nozzle 300 has a configuration capable of adjusting the size thereof, thereby making it possible to adjust the internal pressure of the plasma physical vapor deposition source to a pressure (10 −3 mTorr or more) at which plasma can be generated.
図４は、本発明の一実施例に係るプラズマ補助物理気相蒸着源のノズル孔の大きさを調節するためのノズル孔調節部の一実施例の様子を図示する。図４を参照すると、ノズルの終端にノズル孔調節部を結合することができ、このようなノズル孔調節部の孔の大きさは多様に製作することができ、必要に応じて適切な孔の大きさを有するノズル孔調節部をノズルの終端に装着すればよい。この場合、ノズル孔調節部の外部の円周上に螺子山が形成されており、ノズルの内部に形成された螺子山と噛み合って結合することによって密閉式に堅く結合できる。 FIG. 4 illustrates a state of an embodiment of a nozzle hole adjusting unit for adjusting the size of a nozzle hole of a plasma-assisted physical vapor deposition source according to an embodiment of the present invention. Referring to FIG. 4, the nozzle hole adjusting unit can be coupled to the end of the nozzle, and the size of the nozzle hole adjusting unit can be variously manufactured. A nozzle hole adjusting portion having a size may be attached to the end of the nozzle. In this case, a screw thread is formed on the outer circumference of the nozzle hole adjusting portion, and can be tightly coupled tightly by meshing with and coupled with the screw thread formed inside the nozzle.
提示された各実施例に対する説明は、任意の本発明の技術分野において、通常の知識を有する者が本発明を利用したりまたは実施できるように提供される。このような各実施例に対する多様な変形は、本発明の技術分野において通常の知識を有した者に明白であり、ここに定義された一般的な原理は本発明の範囲を逸脱することなく他の実施例に適用できる。本発明はここに提示された各実施例に限定されるものではなく、ここに提示された原理及び新規の特徴と一貫する最広義の範囲で解析されるべきである。 The description for each example presented is provided to enable any person skilled in the art to use or practice the invention in any technical field of the invention. Various modifications to these embodiments will be apparent to those skilled in the art of the present invention, and the general principles defined herein may be used without departing from the scope of the present invention. This embodiment can be applied. The present invention is not limited to the embodiments presented herein, but should be analyzed in the broadest sense consistent with the principles and novel features presented herein.
Claims (6)
前記坩堝の上面に形成されているノズル、
前記坩堝の長さ方向に沿って坩堝の内部に一定の長さだけ挿入されているプラズマ発生用の電極、
前記プラズマ発生用の電極に連結されたプラズマ発生用電源装置、
前記プラズマ発生用の電極の下部の一部分を取り囲んで前記坩堝内部の一部分を満たす絶縁体、及び
前記絶縁体上に積まれてある蒸発物質を含み、
前記ノズルは、孔を有するノズル孔調整部を、前記ノズルの終端に装着することで、前記ノズルの大きさを変更することができ、これにより前記坩堝内部のプラズマの発生空間でプラズマの発生可能圧力が維持されることを特徴とする、プラズマ補助物理気相蒸着源。 A crucible having a plasma generation space inside,
A nozzle formed on the upper surface of the crucible,
An electrode for plasma generation inserted into the crucible by a certain length along the length direction of the crucible,
A plasma generating power source connected to the plasma generating electrode;
An insulator that surrounds a portion of the lower part of the electrode for generating plasma and fills a portion of the inside of the crucible; and an evaporating substance stacked on the insulator;
The nozzle can change the size of the nozzle by mounting a nozzle hole adjusting portion having a hole at the end of the nozzle, thereby generating plasma in the plasma generation space inside the crucible. A plasma assisted physical vapor deposition source characterized in that the pressure is maintained.
The plasma-assisted physical vapor deposition source according to claim 1, wherein the size of the nozzle can be adjusted by a nozzle hole adjusting unit.
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