CN104955979A - Plasma-assisted physical vapour deposition source - Google Patents

Plasma-assisted physical vapour deposition source Download PDF

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Publication number
CN104955979A
CN104955979A CN201380071622.7A CN201380071622A CN104955979A CN 104955979 A CN104955979 A CN 104955979A CN 201380071622 A CN201380071622 A CN 201380071622A CN 104955979 A CN104955979 A CN 104955979A
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CN
China
Prior art keywords
deposition source
plasma
crucible
vapor deposition
physical vapor
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Granted
Application number
CN201380071622.7A
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Chinese (zh)
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CN104955979B (en
Inventor
崔镕燮
郑熔镐
卢泰协
石东簒
朴贤宰
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Korea nuclear integration Energy Research Institute
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SEM Technology Co Ltd
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating

Abstract

The present invention relates to a physical vapour deposition source using plasma, and relates to a technique whereby plasma is combined with a thermal physical vapour deposition source for forming a thin film under high vacuum.

Description

Plasmaassisted physical vapor deposition source
Technical field
The present invention relates to the physical vapor deposition source utilizing plasma body, particularly relate to a kind of to the technology at the film forming thermal physical vapor deposition source of high vacuum (Thermal Physical Vapor Deposition) binding plasma.
Background technology
Physical vapor deposition (Physical Vapor Deposition; PVD) method is as the one in vapour deposition process, usually can be categorized as evaporation (Evaporation), sputter (Sputtering), ion plating (Ion plating) etc. according to principle of work, be a kind of sedimentation being widely used in decoration, the industry such as ultralight and even electronic applications.
Utilize physical vapor deposition (the Thermal Vapor Deposition) technology of heat generally to carry out under a high vacuum, owing to carrying out at high vacuum state, therefore cannot use plasma body, its reason is as follows simultaneously.
General thermal physical vapor deposition source uses under a high vacuum, and therefore in cavity, the environment for use of particle is not enough to plasma body occurs.For occur plasma body and reduce chamber vacuum degree when, because the difference between atmosphere pressures and the vapour pressure of material is little, therefore rate of evaporation decline.For avoid evaporating rate decline and improve deposition source temperature when, the radiant heat of deposition source can cause substrate temperature to rise, and is therefore difficult to the product being applicable to need low temperature process.
Further, when separately not establishing heating unit on substrate, institute's deposited particles is only equivalent to the energy of deposition source temperature, because the particle in this case deposited does not have enough energy, therefore cannot form the film of high-quality.
For solving the problem, plasmaassisted physical vapor deposition source as physical vapor deposition source, makes the nozzle of deposition source have specified shape and regulate internal pressure with this by the present invention for this reason.Below this is described in further detail.
Summary of the invention
The present invention solves problems of the prior art as follows.According to the method, the pressure of cavity cannot meet plasma generation condition, but due to internal pressure can be regulated by the nozzle form of deposition source, deposition source inside therefore can be made whereby to keep the pressure being applicable to plasma body occurs, utilize evaporating materials generation plasma body.
When plasma body occurs in deposition source inside, particle and the plasma body of evaporation react, on the basis of the heat energy of deposition source, therefore also have the energy of plasma body.In this case, the film of high-quality can be obtained without the need to other heated substrates.
Plasmaassisted physical vapor deposition source, is characterized in that according to an embodiment of the invention, comprising: crucible, and its inside has plasma generation space; Nozzle, it is formed at the upper surface of described crucible; Plasma body generation electrode, its length direction along described crucible inserts predetermined length to crucible inside; Plasma generation power supply apparatus, it is connected to described plasma body generation electrode; Isolator, it surrounds the local of the bottom of described plasma body generation electrode, fills the local of crucible inside; And evaporated material, it is piled up on described isolator, and wherein said nozzle can change jet size and make the plasma generation space of described crucible inside keep occurring the pressure of plasma body.
In this case, the well heater of the external margin being configured at described crucible can also be comprised, and the heating panel of the external margin being configured at well heater can be comprised.The body that inside comprises described crucible, described well heater and described heating panel can also be comprised.
The local of plasma body generation electrode can be inserted into the plasma generation space in described crucible.
Preferably, the pressure range that plasma body can occur is 10 -3more than mTorr.
Can by the size for regulating the nozzle bore adjusting portion of nozzle orifice size to regulate nozzle.
According to the present invention, even if when carrying out under a high vacuum depositing, the pressure of deposition source inside is still the pressure that plasma body can occur, can by regulating the pressure of the shape adjustments deposition source inside of nozzle.By multiple method generation plasma bodys such as radio frequency, microwave, DC pulse.
Because only there is plasma body in deposition source inside, problem that plasma body causes substrate temperature to rise therefore can not be there is or plasma body charged particle causes the problems such as substrate damage.
Accompanying drawing explanation
Fig. 1 is the synoptic diagram of existing physical vapor deposition cavity;
Fig. 2 is the sectional view showing plasmaassisted physical vapor deposition source according to an embodiment of the invention;
Fig. 3 is the use stereographic map showing plasmaassisted physical vapor deposition source according to an embodiment of the invention;
Fig. 4 is that display is according to an embodiment of the invention for regulating the schematic diagram of the shape of the nozzle bore adjusting portion of the nozzle orifice size in plasmaassisted physical vapor deposition source.
Referring to accompanying drawing, various embodiments is described, integrant like Reference numeral representation class similar in institute's drawings attached.Multiple declaration in this specification sheets understands the present invention for helping, but should know these embodiments when also can implementing without when certain illustrated.For ease of embodiment is described, other examples show known features and device in form of a block diagram.
Embodiment
For ease of understanding the embodiment of the present invention, the more than one embodiment of following brief description.This part not to the summing-up summary of likely embodiment, also not for identifying core component in all components or covering the scope of all embodiments.Its sole purpose illustrates by following discloses more than one embodiment providing a concise and to the point form.
Fig. 1 is the pie graph of summarizing the existing physical vapor deposition cavity of display.Target 10 has dish (Disk) or plate (Plate) shape, the collision injection between the process gas (argon gas) that the atom on its surface is supplied by process gas supply department 40.
The bottom of metallic target 10 has silicon chip (wafer) W being arranged at well heater 30 top, from metallic target 10 penetrate atomic deposition to silicon chip W.The top of described metallic target 10 is provided with magnet 20, and described magnet 20 is rotated by unshowned rotating member and magnetic field occurs, and process gas is collided by the surface of this magnetic field and metallic target 10.
The object of the present invention is to provide a kind of to utilizing the physical deposition source binding plasma occurring source of heat to make deposited particles also have the energy of plasma body while having the heat energy of deposition source at present, thus the plasmaassisted physical vapor deposition source (Plasma Aided physical Vapor Deposition Source) of deposited film quality can be improved.
Be different from general physical vapor deposition cavity, comprise for the plasmaassisted physical vapor deposition source 1 of the present invention of reaching above-mentioned purpose: inside has the crucible 100 of plasma generation space 200; Be formed at the nozzle 300 of the upper surface of crucible; The inner plasma body generation electrode 400 inserting predetermined length along the length direction of described crucible to crucible; Be connected to the plasma generation power supply apparatus 500 of plasma body generation electrode 400; Surround plasma body and the local with electrode 400 bottom occurs and the isolator 600 of filling the local of crucible inside; And the evaporated material be piled up on isolator.
The Fig. 2 showing the sectional view in plasmaassisted physical vapor deposition source according to an embodiment of the invention shows these integrants.
The inside of crucible 100 comprises plasma generation space 200, at this plasma generation space generation plasma body.There is plasma body, specifically at the plasma generation space generation plasma body of crucible inside in the structure (with reference to Fig. 2) that employing can insert plasma body generation electrode 400 to existing ermal physics deposition source (Thermal Physical vapor deposition source).
The nozzle 300 being formed at crucible upper surface is the paths of discharging the plasma body occurred at plasma generation space to crucible outside.In this case, by regulating the pressure of the inside, dimension modifying plasmaassisted physical vapor deposition source of nozzle.Size by changing nozzle makes the plasma generation space of crucible inside keep occurring the pressure of plasma body.The preferred pressure range that plasma body can occur is 10 -3more than mTorr.Therefore, required jet size can suitably be selected according to required technique.For selecting the size of this nozzle, the following discloses component for regulating jet size as shown in Figure 4.
As shown in Figure 2, plasma body generation electrode 400 inserts predetermined length along the length direction of described crucible to crucible inside.In this case, the local of plasma body generation electrode can be inserted into the plasma generation space in described crucible.
Plasma body generation electrode 400 is connected to plasma generation power supply apparatus 500.Plasma body generation power supply can be direct current, radio frequency, microwave etc., and Fig. 2 utilizes microwave (micro wave; MW) example of plasma body occurs, and the electrode particularly illustrating coaxial configuration is configured to the shape that can be inserted into crucible inside.
Further, the shape showing electrode is also the shape of coaxial configuration, but in addition can also utilize the electrode of other various shape.
Isolator 600 surrounds the local of the bottom of plasma body generation gas 400 and the local of filling crucible inside.Preferably, isolator is the megohmite that specific inductivity is less than 2000, such as MgO (magnesium oxide), MgF 2(magnesium fluoride), LiF (lithium fluoride), CaF 2(Calcium Fluoride (Fluorspan)), aluminum oxide, glass, pottery, magnesium oxide etc.
Evaporated material can be aluminium, magnesium, silver, gallium, copper, indium, selenide etc., but not by specific restriction.
As shown in Figure 2, by plasma generation space during plasma generation power supply apparatus access voltage, plasma body occurs put into evaporated material in crucible after, the plasma body of generation is discharged by nozzle.By the above-mentioned structure that plasma body can occur in inside, physical deposition source, plasmaassisted physical vapor deposition can be realized, thus without the need to can high-quality thin-film be obtained to base plate heating in addition.
Further, only there is plasma body in deposition source inside, therefore problem that plasma body causes substrate temperature to rise can not occur or plasma body charged particle causes the problems such as substrate damage.
In addition, the well heater 700 of the external margin being configured at crucible can also be comprised, the heating panel 800 being configured at well heater external margin can also be comprised.Further, the inside of body can comprise crucible 100, well heater 700 and heating panel 800.
Well heater 700 is the parts being improved temperature by heating crucible, and heating panel 800 crucible is heated and cuts off radiant heat to make unnecessary part not by the works heated.
Fig. 3 is the use stereographic map showing plasmaassisted physical vapor deposition source according to an embodiment of the invention.
The plasmaassisted physical vapor deposition source 1 of Fig. 2 is inserted into the inside of cavity with the state being connected to plasma generation power supply apparatus 500, position relative with nozzle in inside cavity has the substrate as handling object.Nozzle 300 has dimension adjustable structure, therefore, it is possible to the internal pressure in plasma physical vapor deposition source to be adjusted to the pressure (10 that plasma body can occur -3more than mTorr).
Fig. 4 is that display is according to an embodiment of the invention for regulating the schematic diagram of the shape of an embodiment of the nozzle bore adjusting portion of the nozzle orifice size in plasmaassisted physical vapor deposition source.As shown in Figure 4, at the end of nozzle in conjunction with nozzle bore adjusting portion, the hole of this nozzle bore adjusting portion can be made into sizes, therefore only need to arrange the nozzle bore adjusting portion with suitable hole dimension to nozzle end as required.In this case, the exterior periphery due to nozzle bore adjusting portion is formed with screw thread, therefore with the threaded engagement of nozzle interior, therefore, it is possible to firmly combine hermetically.
The object of open above-described embodiment is that those of ordinary skill in the art can utilize or implement the present invention.Those of ordinary skill in the art can carry out distortion to embodiment and implement, and without departing from the scope of the invention, the General Principle defined in this specification sheets goes for other embodiments.Therefore should explain the present invention from principle disclosed in this specification sheets and the consistent maximum range of new feature, and should not be construed as the present invention and be limited to these embodiments.

Claims (6)

1. a plasmaassisted physical vapor deposition source, is characterized in that, comprising:
Crucible, its inside has plasma generation space;
Nozzle, it is formed at the upper surface of described crucible;
Plasma body generation electrode, its length direction along described crucible inserts predetermined length to crucible inside;
Plasma generation power supply apparatus, it is connected to described plasma body generation electrode;
Isolator, it surrounds the local of the bottom of described plasma body generation electrode, fills the local of crucible inside; And
Evaporated material, it is piled up on described isolator,
Wherein, described nozzle can change jet size and makes the plasma generation space of described crucible inside keep occurring the pressure of plasma body.
2. plasmaassisted physical vapor deposition source according to claim 1, is characterized in that, also comprise:
Well heater, it is configured at the external margin of described crucible.
3. plasmaassisted physical vapor deposition source according to claim 1 and 2, is characterized in that, also comprise:
Heating panel, it is configured at the external margin of described well heater.
4. plasmaassisted physical vapor deposition source according to claim 1, is characterized in that:
The local of described plasma body generation electrode is inserted into the plasma generation space in described crucible.
5. plasmaassisted physical vapor deposition source according to claim 3, is characterized in that, also comprise:
Body, its inside comprises described crucible, described well heater and described heating panel.
6. plasmaassisted physical vapor deposition source according to claim 1, is characterized in that:
The size of described nozzle can be regulated by nozzle bore adjusting portion.
CN201380071622.7A 2013-01-29 2013-12-04 Plasmaassisted physical vapour deposition (PVD) source Active CN104955979B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1020130009719A KR101432514B1 (en) 2013-01-29 2013-01-29 Plasma Aided physical Vapor Deposition Source
KR10-2013-0009719 2013-01-29
PCT/KR2013/011144 WO2014119840A1 (en) 2013-01-29 2013-12-04 Plasma-assisted physical vapour deposition source

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CN104955979A true CN104955979A (en) 2015-09-30
CN104955979B CN104955979B (en) 2017-07-07

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KR (1) KR101432514B1 (en)
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WO (1) WO2014119840A1 (en)

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JPH03247756A (en) * 1990-02-26 1991-11-05 Matsushita Electric Ind Co Ltd Method and device for generating ionized cluster beam
JPH06192824A (en) * 1992-10-26 1994-07-12 Mitsubishi Electric Corp Thin film forming device
JPH11256313A (en) * 1998-03-12 1999-09-21 Ulvac Corp Plasma source for compound thin film forming apparatus
CN1348509A (en) * 1998-08-03 2002-05-08 可口可乐公司 Vacuum vapor desposition system wih plasma reinforcement including evaporating a solid material, generating electric arc discharge
CN1440222A (en) * 2002-02-05 2003-09-03 株式会社半导体能源研究所 Manufacturing system and method, operational method therefor and luminating device
JP2005076095A (en) * 2003-09-02 2005-03-24 Shincron:Kk Thin film deposition system and thin film deposition method
JP2006328490A (en) * 2005-05-27 2006-12-07 Utsunomiya Univ Plasma vapor-deposition apparatus
CN101198715A (en) * 2005-04-21 2008-06-11 双叶电子工业株式会社 Vapor deposition

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JPH089774B2 (en) * 1990-06-25 1996-01-31 三菱電機株式会社 Thin film forming equipment
JPH08287459A (en) * 1995-04-20 1996-11-01 Matsushita Electric Ind Co Ltd Production of magnetic recording medium and device for producing thin film
JP2000038656A (en) 1998-07-17 2000-02-08 Toray Ind Inc Vapor deposition device, production of thin film using same and thin film
AU2003210049A1 (en) * 2002-03-19 2003-09-29 Innovex. Inc. Evaporation source for deposition process and insulation fixing plate, and heating wire winding plate and method for fixing heating wire
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Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03247756A (en) * 1990-02-26 1991-11-05 Matsushita Electric Ind Co Ltd Method and device for generating ionized cluster beam
JPH06192824A (en) * 1992-10-26 1994-07-12 Mitsubishi Electric Corp Thin film forming device
JPH11256313A (en) * 1998-03-12 1999-09-21 Ulvac Corp Plasma source for compound thin film forming apparatus
CN1348509A (en) * 1998-08-03 2002-05-08 可口可乐公司 Vacuum vapor desposition system wih plasma reinforcement including evaporating a solid material, generating electric arc discharge
CN1440222A (en) * 2002-02-05 2003-09-03 株式会社半导体能源研究所 Manufacturing system and method, operational method therefor and luminating device
JP2005076095A (en) * 2003-09-02 2005-03-24 Shincron:Kk Thin film deposition system and thin film deposition method
CN101198715A (en) * 2005-04-21 2008-06-11 双叶电子工业株式会社 Vapor deposition
JP2006328490A (en) * 2005-05-27 2006-12-07 Utsunomiya Univ Plasma vapor-deposition apparatus

Also Published As

Publication number Publication date
KR101432514B1 (en) 2014-08-21
KR20140096743A (en) 2014-08-06
WO2014119840A1 (en) 2014-08-07
JP2016511791A (en) 2016-04-21
JP6078171B2 (en) 2017-02-08
CN104955979B (en) 2017-07-07

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Effective date of registration: 20210318

Address after: South Korea field wide area

Patentee after: Korea nuclear integration Energy Research Institute

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Patentee before: KOREA BASIC SCIENCE INSTITUTE