JP2005076095A - Thin film deposition system and thin film deposition method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a thin film deposition system capable of depositing a high density thin film with high reproducibility and at a high film deposition rate by realizing a stable film deposition process. <P>SOLUTION: A thin film deposition system 1 where raw materials Sa and Sb are heated in a vacuum tank 11 and the resultant evaporated raw materials are stuck to a substrate to deposit a thin film is provided with: a substrate holding means 13; vapor deposition sources 30a and 30b for evaporating raw materials to form evaporated raw materials; and an ion radiation means 60 for radiating ions toward a substrate. Further, for exciting the raw materials evaporated from the vapor deposition sources 30a and 30b by generating plasma at the upper positions Pa and Pb of the vapor deposition sources 30a and 30b, plasma electrodes 17a and 17b, exciting power sources 26a and 26b, and sticking suppression parts 18a and 18b for suppressing the sticking of the raw materials evaporated from the vapor deposition sources 30a and 30b are provided. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a thin film manufacturing method and a vapor deposition apparatus, and more particularly to a thin film forming apparatus and a thin film forming method for forming a thin film by attaching a raw material vapor generated by heating a raw material in a vacuum chamber to a substrate.

  As a technique for forming a thin film, for example, an optical thin film, an ion beam assisted deposition method (hereinafter referred to as “IAD”) is known. In IAD, for example, an ion gun is used to perform deposition while irradiating an ion beam toward a substrate. In film formation by IAD, the focus is on creating a high-density thin film using the kinetic energy of ions, and the reactivity of the vapor deposition material is controlled dependently from the relationship between the film formation rate and ion current density. A film was formed.

In this IAD, the following features were observed.
(1) By simultaneously irradiating ions during film formation, the kinetic energy helps to form a vapor deposition material, and a high-density thin film can be formed.
(2) Since the plasma generation process and the film formation process in the ion gun are spatially separated, it is possible to reduce contamination by different materials. In addition, changes in the process environment during the film formation process can be reduced, and the reproducibility of the film formation process is high.
(3) The ion energy and ion current density of ions irradiated by the ion gun can be controlled independently.
(4) Abnormal discharge can be reduced by using a Neutizer together.
(5) The film formation rate can be increased by increasing the ion current density.
(6) Film formation can be performed at a relatively low pressure, and the pressure control range is wide.

On the other hand, in IAD, it is necessary to increase the ion current density in order to increase the film formation rate. Therefore, in general, TiO ₂ , ZrO ₂ , Al ₂ O ₃ , Ta ₂ O ₅ , Nb ₂ O _{5 are used.} There is also a drawback that it is difficult to increase the film formation speed of a high refractive index (High Index) material such as HfO ₂ .

  As a technique for forming a thin film, in addition to the above IAD, an ion plating method (hereinafter referred to as “IP”) is also known. In the IP, for example, an excitation unit that generates plasma is provided between a deposition source and a substrate, and deposition is performed while plasma is generated by the excitation unit. In the film formation by IP, the reaction of the vapor deposition material is directly controlled by the chemical reaction of electrons and radicals in the plasma, that is, by controlling the plasma density, and has high reactivity.

This IP has the following characteristics.
(1) By controlling the active species (radicals) in the plasma with the plasma intensity, it is possible to form an optical thin film with little optical absorption.
(2) There are few parameters for plasma control.
(3) The film formation cost is low.
(4) It is possible to form a high-quality (for example, low optical absorption) thin film at high speed.

  On the other hand, in IP such as RF ion plating, a thin film with little optical absorption is generated by generating plasma at an approximately intermediate position between the deposition source and the substrate or near the substrate by using excitation means using high frequency. Formation has been attempted, but it has been difficult to form high-density plasma. In addition, it is difficult to suppress abnormal discharge on the electrodes of the excitation means and the substrate.

  In order to make use of the features of IAD and IP as described above and to complement each drawback, a technology for performing a high-density optical thin film at a high film formation speed by using IAD and IP simultaneously is known. (Patent Document 1, Patent Document 2).

JP-A-60-251269 (page 2-3, FIG. 1) Japanese Patent Laid-Open No. 7-37666 (page 4, FIG. 1)

However, when RF ion plating is performed, for example, a raw material evaporation generated by evaporation of the raw material may adhere to the RF electrode that performs high-frequency discharge. When raw material evaporates adhere to the electrode that generates plasma, abnormal discharge occurs due to this. This phenomenon is remarkable in the case of depositing SiO ₂ or the like, which is a typical low refractive index (Low Index) material. That is, when the raw material evaporate adheres to the electrode for generating plasma, ions stay in the adhering raw material evaporate and abnormal discharge is likely to occur. The occurrence of abnormal discharge hinders the generation of stable plasma and has a problem of destabilizing the film forming process.

  Furthermore, when a plurality of excitation means are provided corresponding to a plurality of vapor deposition sources, and film formation using each vapor deposition source and excitation means is performed alternately, the generation / disappearance of plasma in each excitation means May negatively affect process stability. That is, while performing vapor deposition using one vapor deposition source and excitation means, the plasma at the excitation means corresponding to the other vapor deposition source is extinguished, and vapor deposition is started with this other vapor deposition source and excitation means. If the generation of plasma by the excitation means is repeated at the time, the generation / disappearance of the plasma occurs during the film forming process. The generation / disappearance of plasma during the film forming process has caused the film forming process to become unstable and the reproducibility of the film formation to deteriorate. One of the causes of the destabilization of the curtain process due to the generation / disappearance of the plasma is considered to be an interaction between the plasma and the vacuum chamber in which impurities are generated from the wall surface of the vacuum chamber when the plasma is generated.

  The present invention has been made in view of the above problems, and by realizing a stable film formation process, a high-density thin film can be formed with high reproducibility and a high film formation speed, and optical absorption, An object of the present invention is to provide a thin film forming apparatus and a thin film forming method capable of controlling film quality such as stress and scattering with high accuracy.

  In order to solve the above problems, the thin film forming apparatus according to claim 1 is a thin film forming apparatus in which a raw material evaporated by heating a raw material in a vacuum chamber is attached to a substrate to form a thin film. A substrate holding means for holding the substrate disposed in the tank; a vapor deposition source for evaporating the raw material to generate a raw material vapor; and forming a plasma above the vapor deposition source to form a plasma from the vapor deposition source. An excitation means for exciting the evaporated material evaporate and an ion irradiation means for irradiating ions toward the substrate, the excitation means being a plasma electrode disposed in the vacuum chamber; An excitation power source for applying electric power to the plasma electrode, and an adhesion suppression unit for suppressing the evaporation of the raw material generated from the vapor deposition source from adhering to the plasma electrode. Features .

  As described above, since the excitation unit and the ion irradiation unit are provided, a high-density and good thin film can be formed at high speed. Moreover, since the adhesion suppression unit is provided, it is possible to suppress the occurrence of abnormal discharge caused by the adhesion of the raw material evaporate to the plasma electrode. By suppressing the occurrence of abnormal discharge, a stable film formation process can be realized.

  The thin film forming apparatus according to claim 2 is the thin film forming apparatus according to claim 1, wherein the plasma electrode is configured by a high frequency coil that receives high frequency power from the excitation power source and forms plasma by high frequency discharge. And arranged so as to surround a space immediately above the vapor deposition source.

  Thus, by comprising, electric power can be efficiently supplied to a plasma electrode. In addition, since plasma can be generated in a necessary space immediately above the vapor deposition source, the plasma process can be stabilized by reducing the interaction between the plasma and the vacuum chamber.

  In order to solve the above-described problem, the thin film forming apparatus according to claim 3 is a thin film forming apparatus in which a raw material evaporated by heating a raw material in a vacuum chamber is attached to a substrate to form a thin film. A substrate holding means for holding the substrate disposed in the tank; at least two vapor deposition sources for evaporating the raw material to generate a raw material vapor; and an upper position of at least one of the vapor deposition sources Excitation means for exciting the raw material evaporated from the vapor deposition source by generating plasma and ion irradiation means for irradiating ions toward the substrate, the excitation means comprising the A plasma electrode disposed in the vacuum chamber, an excitation power source for applying electric power to the plasma electrode, and a raw material vapor generated from at least one of the deposition sources are attached to the plasma electrode. And adhesion inhibiting portion for inhibiting to, characterized in that it is configured with.

  As described above, since the excitation unit and the ion irradiation unit are provided, a high-density and good thin film can be formed at high speed. Moreover, since the adhesion suppressing part is provided, the adhesion of the raw material evaporate to the plasma electrode is suppressed by suppressing the adhesion of the raw material evaporate generated from one of at least two deposition sources to the plasma electrode. It is possible to suppress the occurrence of abnormal discharge due to the above. By suppressing the occurrence of abnormal discharge, a stable film formation process can be realized.

  The thin film forming apparatus according to claim 4 is the thin film forming apparatus according to claim 3, wherein the plasma electrode is formed of a high frequency coil that receives high frequency power from the excitation power source to form plasma by high frequency discharge. And is disposed so as to surround a space immediately above the vapor deposition source corresponding to at least one vapor deposition source of the vapor deposition source, and the adhesion suppressing unit is formed from at least one of the vapor deposition sources. The generated raw material evaporant is configured to suppress adhering to the high-frequency coil arranged corresponding to another evaporation source.

  By comprising in this way, electric power can be efficiently supplied to a plasma electrode. In addition, since plasma can be generated in a necessary space immediately above the vapor deposition source, the plasma process can be stabilized by reducing the interaction between the plasma and the vacuum chamber. Furthermore, it is possible to suppress the evaporation of the raw material generated from one of the at least two deposition sources from adhering to the high-frequency coil disposed so as to surround the space immediately above the other deposition sources. It becomes possible.

  In order to solve the above-mentioned problem, the thin film forming apparatus according to claim 5 is a thin film forming apparatus in which a raw material evaporated by heating a raw material in a vacuum chamber is attached to a substrate to form a thin film. A substrate holding means for holding the substrate disposed in the bath, at least two vapor deposition sources for evaporating the raw material to generate a raw material evaporate, and generating plasma at a position above each of the at least two vapor deposition sources An excitation means for exciting the raw material evaporated from the vapor deposition source, and an ion irradiation means for irradiating ions toward the substrate, the excitation means being in the vacuum chamber A plasma electrode disposed, an excitation power source for applying power to the plasma electrode, and a raw material vapor generated from at least one of the deposition sources adhere to the plasma electrode. A first plasma electrode in which the plasma electrode is arranged corresponding to any one of the at least two vapor deposition sources, and another vapor deposition source. A second plasma electrode disposed corresponding to one of the first and second electrodes, wherein the adhesion suppression unit is configured to generate a raw material vapor generated from at least one of the vapor deposition sources. It is configured to suppress adhesion to at least one of the second plasma electrodes.

  As described above, since the excitation means for generating plasma and the ion irradiation means are provided above each of the at least two vapor deposition sources, the raw material evaporates generated at the respective vapor deposition sources are excited, and the density is good. It becomes possible to form a thin film at high speed. In particular, in an optical multilayer thin film, for example, a multilayer thin film may be formed by exciting raw material evaporates of two or more kinds of raw materials. In such a case, a high density and good thin film can be formed at high speed. It becomes possible. In addition, since the adhesion suppressing unit is provided, the raw material vapor generated from one of the at least two deposition sources is adhered to at least one of the first plasma electrode and the second plasma electrode. Therefore, it is possible to suppress the occurrence of abnormal discharge caused by the attachment of the raw material evaporate to the first plasma electrode or the second plasma electrode. By suppressing the occurrence of abnormal discharge, a stable film formation process can be realized.

  The thin film forming apparatus according to claim 6 is the thin film forming apparatus according to claim 5, wherein the excitation power source includes a first excitation power source for applying power to the first plasma electrode, and the first power source. A second excitation power source for applying power to the two plasma electrodes, and independently controlling the power supplied from the excitation power source to the first plasma electrode and the second plasma electrode. Power control means is provided.

  By providing the power control means in this way, the plasma generated by the first plasma electrode and the second plasma electrode is independently controlled, and the plasma suitable for the raw material evaporant generated at each evaporation source is controlled. It becomes possible to form stably in the upper position of a vapor deposition source. As a result, film formation using the first plasma electrode and the second plasma electrode can be realized by a stable film formation process.

  A thin film forming apparatus according to a seventh aspect is the thin film forming apparatus according to the sixth aspect, wherein a phase of power having a predetermined frequency applied to the first plasma electrode from the first excitation power source and the second And a phase control means for controlling the phase of power having a predetermined frequency applied to the plasma electrode from the second excitation power source.

  In this way, by providing the phase control means, it is possible to suppress beats generated by buffering the frequency of the power applied by the first excitation power supply and the frequency of the power applied by the second excitation power supply. It becomes. Thereby, a stable film forming process can be realized.

  The thin film forming apparatus according to claim 8 is the thin film forming apparatus according to any one of claims 1, 3, and 5 to 7, wherein the adhesion suppressing unit includes the plasma electrode. It is the covering member provided so that it might surround.

  By comprising in this way, it becomes possible to suppress adhesion of the raw material evaporate to a plasma electrode with a simple structure.

  The thin film forming apparatus according to claim 9 is the thin film forming apparatus according to claim 2 or 4, wherein the adhesion suppressing portion is provided so as to surround an inner peripheral side and an outer peripheral side of the high-frequency coil. It is characterized by comprising a member.

  By comprising in this way, it becomes possible to suppress adhesion of the raw material evaporate to the inner periphery and outer periphery of a high frequency coil by simple structure. In addition, the plasma generated by the high frequency coil can be generated in a relatively closed space inside the high frequency coil. Thereby, it becomes possible to excite raw material evaporates efficiently.

  The thin film forming apparatus according to claim 10 is the thin film forming apparatus according to claim 2 or 4, wherein the covering member includes an inner covering member provided on an inner peripheral side of the high frequency coil, and the plasma electrode. An outer covering member provided on an outer peripheral side of the inner covering member, wherein the inner covering member is formed of an insulator, the outer covering member is formed of a conductor, and the outer covering member is grounded. To do.

  By comprising in this way, it becomes possible to suppress adhesion of the raw material evaporate to the inner periphery of a high frequency coil, without disturbing generation | occurrence | production of the plasma by a high frequency coil by an inner side coating member. In addition, the plasma generated by the high frequency coil can be generated in a relatively closed space inside the high frequency coil. Thereby, it becomes possible to excite raw material evaporates efficiently. Moreover, it becomes possible to suppress adhesion of the raw material evaporate to the outer periphery of the high frequency coil by the outer covering member. Furthermore, the outer covering member prevents plasma from being generated outside the high-frequency coil, making it possible to generate the plasma in a limited space inside the high-frequency coil, and the interaction between the plasma and the vacuum chamber. It becomes possible to make it less.

  The thin film forming apparatus according to an eleventh aspect is the thin film forming apparatus according to the second or fourth aspect, wherein the adhesion suppressing portion is a covering member provided so as to surround at least the inner peripheral side of the high frequency coil. A first inner covering member provided on the inner peripheral side of the high-frequency coil; and a second inner covering member disposed at a predetermined interval from the first inner covering member. It is characterized by having.

  By the inner covering member, it is possible to suppress adhesion of the raw material evaporate to the inner periphery of the high frequency coil without hindering the generation of plasma by the high frequency coil. In addition, the plasma generated by the high frequency coil can be generated in a relatively closed space inside the high frequency coil. Thereby, it becomes possible to excite raw material evaporates efficiently. Further, since the first inner covering member and the second inner covering member are arranged at a predetermined interval, the influence of the raw material evaporate and ions attached to the inner covering member is minimized by using the interval. The plasma generated by the high frequency discharge can be stably maintained while suppressing to a low level.

  In order to solve the above problem, the thin film forming apparatus according to claim 12 is a thin film forming apparatus in which a raw material evaporated by heating a raw material in a vacuum chamber is attached to a substrate to form a thin film. A substrate holding means for holding the substrate disposed in the tank; a vapor deposition source for evaporating the raw material to generate a raw material vapor; and forming a plasma above the vapor deposition source to form a plasma from the vapor deposition source. An excitation means for exciting the evaporated material evaporate and an ion irradiation means for irradiating ions toward the substrate, the excitation means being a plasma electrode disposed in the vacuum chamber; An excitation power source for applying electric power to the plasma electrode at a predetermined frequency, and the electric power of the predetermined frequency from the excitation power source is applied to the plasma electrode from the cycle of the predetermined frequency. Long Characterized by comprising an abnormal discharge preventing means for intermittently applied in period.

  Thus, since the excitation means and the ion irradiation means are provided, a high-density and good thin film can be formed at high speed. Moreover, since the abnormal discharge prevention means is provided, even if the raw material evaporate adheres to the plasma electrode, the occurrence of abnormal discharge can be suppressed by suppressing the retention of ions in the adhering raw material evaporate. It becomes possible. By suppressing the occurrence of abnormal discharge, a stable film formation process can be realized.

  In order to solve the above-mentioned problem, a thin film forming apparatus according to claim 13 is the raw material evaporant generated in the vapor deposition source in the thin film forming apparatus according to any one of claims 1 to 12. A vapor deposition stop means for temporarily preventing the vapor from reaching the substrate, the vapor deposition stop means being positioned between the plasma electrode and the substrate holding means. And a possible shutter member driving section.

  By configuring in this way, it becomes possible to form plasma at a position above the vapor deposition source by the excitation means while temporarily preventing the raw material evaporant generated in the vapor deposition source from reaching the substrate. .

  In order to solve the above-mentioned problem, the thin film forming method according to claim 14 is a method of generating a raw material evaporate by heating a raw material filled in a vapor deposition source in a vacuum chamber, and an excitation means for generating plasma. A thin film that generates plasma in a space above the vapor deposition source and forms a thin film by performing vapor deposition on the substrate while irradiating the substrate with ions by ion irradiation means for irradiating ions. In the forming method, vapor deposition is performed on the substrate while suppressing the evaporation of the raw material from adhering to the excitation means.

  Thus, since vapor deposition is performed while suppressing the evaporation of the raw material from adhering to the excitation means, it is possible to suppress the occurrence of abnormal discharge caused by the adhesion of the raw material evaporation to the excitation means. By suppressing the occurrence of abnormal discharge, a stable film formation process can be realized.

  In order to solve the above-mentioned problem, the thin film forming method according to claim 15 is a method for generating a raw material evaporate by heating a raw material filled in a vapor deposition source in a vacuum chamber, and an excitation means for generating plasma. A thin film that generates plasma in a space above the vapor deposition source and forms a thin film by performing vapor deposition on the substrate while irradiating the substrate with ions by ion irradiation means for irradiating ions. In the forming method, the substrate is deposited while generating plasma in a limited space immediately above the deposition source by the excitation means.

  In this way, it is possible to generate plasma in the necessary space directly above the deposition source by performing deposition, so that the interaction between the plasma and the vacuum chamber is reduced and the plasma process can be stabilized. It becomes. Moreover, it becomes possible to excite raw material evaporates efficiently.

  In order to solve the above-described problem, the thin film forming method according to claim 16 is an excitation means for generating a raw material evaporate by heating a raw material filled in a vapor deposition source in a vacuum chamber and generating plasma. A thin film that generates plasma in a space above the vapor deposition source and forms a thin film by performing vapor deposition on the substrate while irradiating the substrate with ions by ion irradiation means for irradiating ions. In the forming method, the generation of the plasma by the excitation unit is performed by discharging by applying electric power of a predetermined frequency to the plasma electrode installed in the vacuum chamber, and the plasma is generated by the excitation unit. In addition, the power of the predetermined frequency is intermittently applied to the plasma electrode at a cycle longer than the cycle of the predetermined frequency. That.

  In this way, by forming a thin film, even if the raw material evaporates adhere to the excitation means, it is possible to suppress the occurrence of abnormal discharge by suppressing the retention of ions in the attached raw material evaporates. It becomes. By suppressing the occurrence of abnormal discharge, a stable film formation process can be realized.

  In order to solve the above problem, the thin film forming method according to claim 17 is a thin film forming a thin film on a substrate using a thin film forming apparatus having a first vapor deposition source and a second vapor deposition source in a vacuum chamber. In the forming method, the first raw material filled in the first vapor deposition source is heated, and the substrate is generated while generating plasma in a space immediately above the first vapor deposition source by an excitation unit for generating plasma. A first vapor deposition step of performing vapor deposition on the substrate, and a second vapor deposition step of performing vapor deposition on the substrate by heating the second raw material filled in the second vapor deposition source. During the process, plasma is maintained in a space immediately above the first vapor deposition source, and at least one of the first vapor deposition process and the second vapor deposition process is irradiated with ions in the vacuum chamber. Depending on the ion irradiation means Toward the substrate and then irradiating the ions.

  In this way, in order to maintain the plasma in the space immediately above the first vapor deposition source during the second vapor deposition step, the atmosphere in the vacuum chamber, etc. due to the generation / disappearance of plasma during the film formation process. Can be prevented, and the film forming process can be stabilized. In addition, the process time required for film formation can be shortened.

  The thin film forming method according to claim 18 is the thin film forming method according to claim 17, wherein the second vapor deposition step is performed while suppressing the evaporation of the raw material of the second raw material from adhering to the excitation means. It is characterized by that.

  As described above, since the second vapor deposition step is performed while suppressing the raw material evaporant of the second raw material from adhering to the excitation means, the adhesion of the raw material evaporate to the excitation means is suppressed in the second vapor deposition step. Thus, it is possible to suppress the occurrence of abnormal discharge due to the adhesion of the raw material evaporate to the excitation means. By suppressing the occurrence of abnormal discharge, a stable film formation process can be realized.

  The thin film forming method according to claim 19 is the thin film forming method according to claim 17, wherein the first vapor deposition step is performed while suppressing the evaporation of the raw material of the first raw material from adhering to the excitation means. The plasma is generated in the space immediately above the second vapor deposition source by the excitation means for generating the plasma, and the second raw material evaporant is suppressed from adhering to the excitation means while the plasma is generated. Two vapor deposition steps are performed.

  Thus, in order to perform the 1st vapor deposition process and the 2nd vapor deposition process, suppressing that a raw material evaporate adheres to an excitation means, in the 1st vapor deposition process and the 2nd vapor deposition process, it is to an excitation means. It is possible to suppress the attachment of the raw material evaporate and to suppress the occurrence of abnormal discharge caused by the attachment of the raw material evaporate to the excitation means. By suppressing the occurrence of abnormal discharge, a stable film formation process can be realized.

  The thin film forming method according to claim 20 is the thin film forming method according to claim 19, wherein, in the first vapor deposition step, the first excitation means provided corresponding to the first vapor deposition source is used. Plasma is generated in a space immediately above the first vapor deposition source, and in the second vapor deposition step, the second exciter provided corresponding to the second vapor deposition source is directly above the second vapor deposition source. Plasma is generated in the space, and the first vapor deposition step is performed while suppressing the evaporation of the raw material of the first raw material from adhering to the second excitation means, and the raw material evaporation of the second raw material is The second vapor deposition step is performed while suppressing adhesion to the first excitation means.

  In this way, the first vapor deposition step is performed while suppressing the first raw material evaporant from adhering to the second excitation means, and the second raw material evaporate adheres to the first excitation means. In order to perform the second vapor deposition step while suppressing this, the raw material evaporates adhere to the second excitation means in the first vapor deposition step, and the raw material evaporates adhere to the first excitation means in the second vapor deposition step It is possible to suppress this.

  The thin film forming method according to claim 21 is the thin film forming method according to any one of claims 17 to 20, wherein at least one of the first vapor deposition step and the second vapor deposition step. In the step, the reactive gas ions are irradiated by the ion irradiation means.

  In this way, by irradiating the reactive gas ions, the raw material evaporate that reaches the substrate is hit by the reactive gas ion beam, so that a dense thin film can be formed.

  The thin film forming method according to claim 22 is the thin film forming method according to any one of claims 17 to 21, wherein the first vapor deposition step and the second vapor deposition step are performed simultaneously. It is characterized by.

  As described above, according to the thin film forming apparatus and the thin film forming method of the present invention, it is possible to form a high density and good thin film at high speed. Moreover, it is possible to suppress the occurrence of abnormal discharge and realize a stable film forming process. In addition, the plasma process can be stabilized by reducing the interaction between the plasma and the vacuum chamber.

  In addition, according to the thin film forming apparatus of the present invention, it is possible to realize film formation using the first plasma electrode and the second plasma electrode by a stable film formation process. In addition, according to the thin film forming apparatus of the present invention, it is possible to realize a stable film forming process by suppressing the occurrence of beat.

  Further, according to the thin film forming method of the present invention, the plasma is maintained in the space immediately above the first vapor deposition source during the second vapor deposition step, which causes generation / disappearance of plasma during the film formation process. As a result, it is possible to avoid a sudden change in the atmosphere in the vacuum chamber, and to stabilize the film forming process.

  Embodiments of the present invention will be described below with reference to the drawings. The members described below, the arrangement of members, and the like do not limit the present invention and can be variously modified within the scope of the gist of the present invention.

  FIG. 1 is an explanatory diagram showing a schematic configuration of the thin film forming apparatus of the present embodiment. 2 and 3 are diagrams illustrating the adhesion suppressing unit of the present embodiment. FIG. 4 is a block diagram for explaining the function of the control means in the thin film forming apparatus of this embodiment.

  The vapor deposition apparatus 1 of this embodiment shown in FIG. 1 is an example of the thin film formation apparatus of this invention. The vapor deposition apparatus 1 includes a vacuum chamber 11, a substrate holder 13 for holding a substrate (not shown), vapor deposition sources 30a and 30b, excitation means (high-frequency coils 17a and 17b, etc.), an ion gun 60, and vapor deposition. Stop means (shutters 51a, 51b, etc.). The substrate corresponds to the substrate of the present invention. What corresponds to the substrate of the present invention is not limited to a plate-like substrate as in the present embodiment, but may be a columnar member, a circular tube member, or the like. The substrate holder 13 corresponds to the substrate holding means of the present invention. The vapor deposition source 30a corresponds to the first vapor deposition source of the present invention. The vapor deposition source 30b corresponds to the second vapor deposition source of the present invention. The ion gun 60 corresponds to the ion irradiation means of the present invention.

  The vacuum chamber 11 is a stainless steel container that is usually used in a known vapor deposition apparatus, and has a substantially rectangular parallelepiped shape. An exhaust pipe 11a is connected to the vacuum chamber 11, and the inside of the vacuum chamber 11 is depressurized by a vacuum pump 12 connected via the pipe 11a. Further, the vacuum chamber 11 is provided with a gas introduction tube 11b for introducing gas into the chamber. A gas cylinder 41 is connected to the gas introduction pipe 11b, and oxygen gas, nitrogen gas, fluorine gas, ozone gas, or the like can be supplied from the gas cylinder 41 into the vacuum chamber 11. The gas flow rate from the gas cylinder 41 is adjusted by the mass flow controller 42. In the present embodiment, the gas introduction pipe 11b is arranged so that the gas discharge port of the gas introduction pipe 11b faces plasma generation spaces Pa and Pb described later.

  Further, a correction plate 15 is erected on the inner wall of the vacuum chamber 11. The correction plate 15 is a plate-like member. The correction plate 15 allows the raw material vapor generated from the vapor deposition sources 30a and 30b and the ion beam irradiated from the ion gun 60 to reach the substrate disposed in the substrate holder 13 uniformly or in a desired distribution. It is for making. As the shape of the correction plate 15, various shapes are adopted depending on the arrangement of the substrate, the relative positions of the vapor deposition sources 30 a and 30 b and the substrate holder 13, the film thickness distribution of the thin film to be formed, and the like. .

  The substrate holder 13 is for holding a substrate on which a thin film is to be formed, and the substrate holder 13 of this embodiment has a dome shape. A plurality of substrates are arranged on the inner surface of the dome-shaped substrate holder 13, and the deposition sources 30 a and 30 b arranged on the bottom surface of the vacuum chamber 11 are opposed to the substrate. That is, the substrate holder 13 is provided above the vacuum chamber 11 so as to face the vapor deposition sources 30a and 30b. The substrate holder 13 is rotated by a motor (not shown) so that the substrate revolves in a state where the substrate faces the vapor deposition sources 30a and 30b. A heater 14 is disposed above the substrate holder 13 so that the substrate can be heated by a heater power supply 24 connected to the heater 14. The substrate holder 13 is provided with a thermocouple 13a (see FIG. 4) for measuring the temperature.

  The vapor deposition sources 30 a and 30 b are provided on the bottom surface of the vacuum chamber 11. The vapor deposition sources 30a and 30b of this embodiment are electron beam vapor deposition sources, and are configured to evaporate the vapor deposition material by irradiating the vapor deposition material filled in the water-cooled crucible with an electron beam. In this embodiment, the vapor deposition source 30a and the vapor deposition source 30b are provided in the vacuum chamber 11, and it is possible to form a film using a plurality of vapor deposition sources. The vapor deposition source 30a includes a crucible 31a for holding a thin film raw material and an electron gun 32a for generating an electron beam for irradiating the raw material filled in the crucible 31a. Similarly to the vapor deposition source 30a, the vapor deposition source 30b also includes a crucible 31b and an electron gun 32b. Note that the crucibles 31a and 31b of the present embodiment have a generally cubic or rectangular parallelepiped shape and are provided with a recess on the upper surface.

  An electron gun power source 25a is connected to the electron gun 32a, and an electron gun power source 25b is connected to the electron gun 32b. By supplying electric power to the electron guns 32a and 32b by the electron gun power supplies 25a and 25b, an electron beam is generated from the electron guns 32a and 32b, and the evaporation material in the crucibles 31a and 31b is heated by the electron beam. . The evaporated material, which is a heated evaporated material, diffuses into the vacuum chamber 11 and a part of the evaporated material adheres to the substrate held by the substrate holder 13 to form a thin film.

  Note that a resistance overheating evaporation source, a high-frequency heating evaporation source, or an evaporation source using a laser beam can be used as the evaporation source. The resistance overheating evaporation source is an evaporation source that evaporates the evaporation material using electric heat generated by energizing a heater or a board filled with the evaporation material. The high-frequency heating evaporation source is an evaporation source that evaporates the evaporation material by heating the evaporation material filled in a crucible such as alumina by high-frequency induction using a high-frequency coil.

Next, the excitation means of the present invention will be described. In this embodiment, the excitation means includes high frequency coils 17a and 17b, high frequency power sources 26a and 26b, matching circuits 29a and 29b, and cover members 18a and 18b.
The high frequency coils 17a and 17b correspond to the plasma electrodes of the present invention, the high frequency coil 17a corresponds to the first plasma electrode, and the high frequency coil 17b corresponds to the second plasma electrode. The high frequency coils 17a and 17b are members in which a pipe material such as copper is formed in a spiral shape. The high frequency coils 17a and 17b are provided in the vicinity of the vapor deposition sources 30a and 30b, and surround a space immediately above the vapor deposition sources 30a and 30b. At this time, the high-frequency coils 17a and 17b face the substrate holder 13 from the vapor deposition sources 30a and 30b with the central axis of the spiral portions of the high-frequency coils 17a and 17b facing the direction connecting the vapor deposition sources 30a and 30b and the substrate holder 13. It is arranged so that

  A high frequency power supply 26a is connected to the high frequency coil 17a through a matching circuit 29a, and a high frequency power supply 26b is connected to the high frequency coil 17b through a matching circuit 29b so that high frequency power is applied to the high frequency coils 17a and 17b. It has become. The high frequency power supplies 26a and 26b output a high frequency voltage of 13.56 MHz. The high frequency power supplies 26a and 26b correspond to the excitation power supply of the present invention. The high frequency power supply 26a corresponds to the first excitation power supply of the present invention, and the high frequency power supply 26b corresponds to the second excitation power supply of the present invention.

  The high frequency power supplies 26a and 26b can apply high frequency power to the high frequency coils 17a and 17b to generate plasma by high frequency discharge from the high frequency coils 17a and 17b. When plasma is generated, first, the inside of the vacuum chamber 11 is decompressed by the vacuum pump 12, and gas is introduced into the vacuum chamber 11 from the gas cylinder 41 as necessary. Thereafter, high frequency power is applied to the high frequency coils 17a and 17b by the high frequency power sources 26a and 26b, so that the plasma generation space Pa, which is a space surrounded by the high frequency coil 17a immediately above the vapor deposition source 30a, and the vapor source 30b is directly above. Plasma can be generated in each of the plasma generation spaces Pb that are spaces surrounded by the high-frequency coil 17b.

  In the vapor deposition apparatus 1 of this embodiment, the high frequency power supply 26a is provided corresponding to the high frequency coil 17a, and the high frequency power supply 26b is provided corresponding to the high frequency coil 17b, so that power supply to the high frequency coil 17a and high frequency coil 17b are provided. The power supply can be controlled independently. As a result, the plasma in the plasma generation space Pa and the plasma generation space Pb is independently controlled, and stable plasma can be generated in the plasma generation spaces Pa and Pb.

  In the present embodiment, the high frequency coils 17a and 17b are provided in the vicinity of the vapor deposition sources 30a and 30b, and plasma is generated in the relatively closed plasma generation spaces Pa and Pb surrounded by the high frequency coils 17a and 17b. Therefore, it has the following effects. That is, a high-frequency voltage is applied to the high-frequency coils 17a and 17b by the high-frequency power sources 26a and 26b while the raw materials in the crucibles 31a and 31b are heated and evaporated by the high-frequency power sources 26a and 26b by the electron guns 32a and 32b. The raw material evaporates (deposition clouds) in the vicinity of 30a and 30b can be turned into plasma.

  The plasma generation spaces Pa and Pb in the vicinity of and directly above the vapor deposition sources 30a and 30b are places where the density of the raw material evaporates is high. By generating plasma in these places, the raw material evaporates are efficiently excited, The energy ranking can be increased. It has been conventionally known that the raw material evaporate is slightly excited by the effect of the electron beam generated by the electron guns 32a and 32b. In the present embodiment, in addition to this, the high-frequency coils 17a and 17b are provided. By arranging the plasma in the plasma generation spaces Pa and Pb in the vicinity of the vapor deposition sources 30a and 30b and immediately above the vapor deposition sources 30a and 30b, it is possible to positively convert the raw material vapor into plasma. ing.

  In the present embodiment, the high-frequency coils 17a and 17b are separated from the substrate (substrate holder 13) and provided in the vicinity of the vapor deposition sources 30a and 30b, so that the charged particles of plasma generated by the high-frequency coils 17a and 17b are generated. The substrate and the thin film formed on the substrate are not adversely affected, and abnormal discharge is prevented from occurring in the vicinity of the substrate. Furthermore, the high frequency coils 17a and 17b are provided in the vicinity of the vapor deposition sources 30a and 30b to generate plasma in the plasma generation spaces Pa and Pb, thereby reducing the influence of plasma on the side wall surface of the vacuum chamber 11. Thus, the interaction between the plasma and the vacuum chamber in which impurities are generated from the wall of the vacuum chamber is reduced.

  Further, a phase shifter 27 is connected to the high frequency power supplies 26a and 26b. The phase shifter is provided so as to prevent beats (beats). There may be a slight difference between the frequency of the high frequency power applied by the high frequency power supply 26a and the frequency of the high frequency power applied by the high frequency power supply 26b. In this way, when there is a slight difference in frequency, when power is supplied from the high-frequency power sources 26a and 26b at the same time and high-frequency discharge is performed by the high-frequency coils 17a and 17b, a beat may occur. The phase shifter 27 adjusts the phase of the high frequency power of the high frequency power source 26a and the high frequency power of the high frequency power source 26b. In the present embodiment, the phase is adjusted by a phase shifter so that the occurrence of beat can be prevented. By preventing the occurrence of beat, stable high frequency discharge is enabled by the high frequency coils 17a and 17b, and stable plasma can be generated in the plasma generation spaces Pa and Pb.

  The cover members 18a and 18b are members provided so as to cover the high-frequency coils 17a and 17b. The cover members 18a and 18b correspond to the adhesion suppressing portion and the covering member of the present invention. The cover members 18a and 18b are provided so as to surround the inner peripheral side and the outer peripheral side of the high-frequency coils 17a and 17b. By covering the high-frequency coils 17a and 17 with the cover members 18a and 18b, it is possible to suppress adhesion of the raw material evaporate to the high-frequency coils 17a and 17b with a simple configuration that only covers the high-frequency coils 17a and 17. It becomes possible.

FIG. 2 shows an example of the cover member 18a. FIG. 2A is a plan view of the cover member 18a. 2B is a cross-sectional view taken along the line XX in FIG. 2 also shows a high-frequency coil 17a and a gas introduction pipe 11b for supplying gas from the gas cylinder 41 into the vacuum chamber 11. Cover member 18a of this embodiment, the inner cover members 18a ₁ from the inner circumferential side of the high-frequency coil 17a covering the high-frequency coil 17a, the outer peripheral side and lower side of the high-frequency coil 17a, the outer peripheral cover member from the upper side to cover the high-frequency coil 17a 18a ₂ and covers the inner peripheral side and the outer peripheral side of the high frequency coil 17a.

As shown in FIG. 2, the inner circumferential cover members 18a ₁ of the present embodiment, in order to place inside of the high-frequency coil 17a, a cylindrical member having a diameter smaller than the inner diameter of the high-frequency coil 17a. The outer peripheral covering member 18a ₂ of the present embodiment has a cylindrical side wall surface W1 positioned on the outer peripheral side of the high frequency coil 17a, an annular upper wall surface W2 positioned on the upper side of the high frequency coil 17a, and a lower side of the high frequency coil 17a. It is comprised by the cyclic | annular lower wall surface W3 located, and the side wall surface W1 and the upper wall surface W2, and the side wall surface W1 and the lower wall surface W3 are integrally formed, respectively. On the outer covering member 18a ₂ of the lower wall surface W3, insertion hole ho for passing a high-frequency coil 17a. The insertion hole ho may be provided on the side wall surface W1. Incidentally, and between the inner circumferential cover members 18a ₁ and the outer cover member 18a _2, may be provided a slight clearance between the outer periphery covering member 18a ₂ and the high frequency coil 17a in the insertion hole ho, the inner circumferential cover members 18a ₁ and the outer periphery and it may be provided with small vent holes in the cover member 18a _2, preferably keep a space surrounded by the inner periphery covering member 18a ₁ and the outer cover member 18a ₂ to be exhausted, and the like.

In this embodiment, the outer peripheral cover member 18a ₂ is fixed to the vacuum layer 11 via the support column (not shown). Inner circumferential covering member 18a ₁ is being fitted to the support groove m that is formed on the lower wall surface W3 of the outer peripheral cover member 18a _2, it is supported. The method of supporting the inner periphery covering member 18a ₁ and the outer periphery covering member 18a ₂ is not limited to this, and the inner periphery covering member 18a ₁ is also fixed to the vacuum chamber 11 via a support, or the inner periphery covering member 18a ₂ the covering member 18a ₁ or screwed, etc. to such or engaged. The inner peripheral covering member 18a ₁ may be fixed to the vacuum chamber 11 with a support, and the outer peripheral covering member 18a ₂ may be supported by the inner peripheral covering member 18a ₁ .

In the present embodiment, the inner periphery covering member 18a ₁ is formed of an insulator. As the insulating body forming the inner peripheral covering member 18a _1, for example _{SiO 2, Al 2 O 3,} MgO, BeO, BN, what a MgO · SiO ₂ or the like, or the main component of these conceivable. By forming the inner periphery covering member 18a ₁ with an insulator, the generation of plasma inside the high frequency coils 17a, 17b is preferable without being hindered by the inner periphery covering member 18a ₁ .

The outer periphery covering member 18a ₂ is formed of a conductor and is grounded. The conductor that forms the outer periphery covering member 18a _1, for example, stainless steel, nickel, copper, molybdenum or the like. In the present embodiment, the outer peripheral covering member 18a ₂ made of a conductor is grounded. By grounding the outer periphery covering member 18a _2, it is possible to prevent the plasma to the outside of the high-frequency coil 17a is generated, it becomes possible to generate plasma inside the limited space of the radio frequency coil 17a. In other words, plasma can be generated in a limited manner inside the high-frequency coil 17a. As a result, the interaction between the plasma and the vacuum chamber 11 can be reduced and stable film formation can be realized.

Similarly to the cover member 18a, the cover member 18b includes an inner periphery covering member 18b ₁ formed of an insulator and an outer periphery covering member 18b ₂ formed of a conductor, and the outer periphery covering member 18b ₂ is grounded. . The shapes of the inner peripheral covering member 18b ₁ and the outer peripheral covering member 18b ₂ are the same as the shapes of the inner peripheral covering member 18a ₁ and the outer peripheral covering member 18a _{2 shown} in FIG. The inner periphery covering members 18a ₁ and 18b ₁ correspond to the inner covering member of the present invention, and the outer periphery covering members 18a ₂ and 18b ₂ correspond to the outer covering member of the present invention.

In addition to the above-described examples of the cover members 18a and 18b, configurations corresponding to cover members 118a and 118b to be described below may be used as the adhesion suppressing portion and the covering member of the present invention.
FIG. 3 shows the cover member 118a. Although illustration is omitted, the cover member 118b can also have the same configuration as the cover member 118a. FIG. 3A is a plan view of the cover member 118a. FIG. 3B is a YY cross-sectional view in FIG. FIG. 3 also shows the high-frequency coil 17a and the gas introduction pipe 11b. The cover member 118a of this embodiment, the inner cover member 118a ₁ from the inner circumferential side of the high-frequency coil 17a covering the high-frequency coil 17a, the outer peripheral side and lower side of the high-frequency coil 17a, the outer peripheral cover member from the upper side to cover the high-frequency coil 17a 118a ₂ and covers the inner peripheral side and the outer peripheral side of the high frequency coil 17a. The inner peripheral covering member 118a ₁ corresponds to the inner covering member of the present invention, and the outer peripheral covering member 118a ₂ corresponds to the outer covering member of the present invention.

As shown in FIG. 3, the inner periphery covering member 118a ₁ of the present embodiment includes an inner periphery lower covering member 118a ₁ _d corresponding to the second inner covering member of the present invention, and the first inner covering of the present invention. consisting of an inner peripheral upper cover member 118a ₁ _u corresponding to member. The inner peripheral lower covering member 118a ₁ —d and the inner peripheral upper covering member 118a ₁ —u are both cylindrical members having a diameter smaller than the inner diameter of the high frequency coil 17a in order to be disposed inside the high frequency coil 17a. . In the present embodiment, the inner peripheral lower covering member 118a _{1 —} d has a smaller diameter than the inner peripheral upper covering member 118a _{1 —} u. The outer periphery covering member 118a ₂ of the present embodiment has the same shape as the outer periphery covering member 18a ₂ shown in FIG. However, the upper wall surface of the outer cover member 118a ₂ comprises an engagement portion ha _2. In the present embodiment, the engaging portion ha ₂ is a step provided at the upper wall surface end of the outer periphery covering member 118a ₂ .

In this embodiment, the outer periphery covering member 118a ₂ is fixed to the vacuum layer 11 via a support (not shown). The inner peripheral lower covering member 118a _{1 —} d is supported by being fitted into a support groove m formed in the lower wall surface W3 of the outer peripheral covering member 118a ₂ . The inner peripheral upper covering member 118a _{1 —} u is engaged with the engaging piece ha ₁ formed on the upper end of the inner peripheral upper covering member 118a _{1 —} u with the engaging portion ha ₂ formed on the upper wall surface of the outer peripheral covering member 118a _2. It is supported by combining. Further, at least a part of the inner peripheral lower covering member 118a _{1 —} d is inserted inside the inner peripheral upper covering member 118a _{1 —} u, and the inner peripheral lower covering member 118a _{1 —} d and the inner peripheral upper covering member 118a _1. _U is arranged so as to overlap at least partly. At this time, to allow a predetermined interval (several millimeters) between the inner circumferential lower cover member 118a ₁ _d and the inner upper cover member 118a ₁ _u, the inner peripheral lower cover member 118a ₁ _d, the inner peripheral The diameter of the upper covering member 118a _{1 —} u is determined. The method of supporting the inner peripheral lower covering member 118a ₁ _d, the inner peripheral upper covering member 118a ₁ _u and the outer peripheral covering member 18a ₂ is not limited to the above, and the inner peripheral lower covering member 118a ₁ _d, the inner peripheral upper cover The covering member 118a _{1 —} u may be attached with a screw or the like.

In the example of FIG. 3, as described above, the inner peripheral lower covering member 118 a _{1 —} d so that a predetermined interval is formed between the inner peripheral lower covering member 118 a _{1 —} d and the inner peripheral upper covering member 118 a _{1 —} u. , the inner peripheral upper cover member 118a ₁ _u are arranged. By providing the gap between the inner peripheral lower cover member 118a 1 _{_d} and the inner upper cover member 118a 1 _{_u,} material vapors which by utilizing the intervals, adhering to the inner peripheral cover member 118a ₁ The plasma generated by the high frequency discharge can be stably maintained in the plasma generation space Pa while minimizing the influence of ions and ions.

The inner circumference covering member 118a ₁ is preferably formed of an insulator as in the case of the inner circumference covering member 18a ₁ described above. However, the inner circumferential cover members 118a _1, the distance between the inner peripheral lower cover member 118a ₁ _d and the inner upper cover member 118a ₁ _u provided, which can perform high-frequency discharge by utilizing the interval Therefore, it is also possible to form stainless steel, nickel, copper, an inner circumferential covering member 118a ₁ with a conductor such as molybdenum. The outer periphery covering member 118a ₂ is formed of a conductor and grounded in the same manner as the outer periphery covering member 118a ₂ described above.

Next, the vapor deposition stop means of the present invention will be described. In the present embodiment, the vapor deposition stopping means of the present invention includes shutters 51a and 51b, rotating rods 52a and 52b, and shutter drive motors 53a and 53b. The shutters 51a and 51b correspond to the shutter member of the present invention, and the rotary rods 52a and 52b and the shutter drive motors 53a and 53b correspond to the shutter member drive unit of the present invention.
The shutter 51a is a plate-shaped member that covers the upper part of the plasma generation space Pa. The shutter 51b is a plate-shaped member that covers the upper part of the plasma generation space Pb. The shutter 51a of this embodiment is connected to a shutter drive motor 53a (see FIG. 4) via a rotating rod 52a, and the shutter drive motor 53b (see FIG. 4) is connected to the shutter 51b via a rotating rod 52b. Yes. By driving the shutter drive motor 53a, the rotating rod 52a rotates. The shutter 51a moves between a position that covers the upper part of the plasma generation space Pa and a position that does not cover as the rotating rod 52a rotates. Similarly to the shutter 51a, the shutter 51b also moves between a position covering the upper part of the plasma generation space Pb and a position not covering it.

  When the shutters 51a and 51b are in positions that do not cover the upper portions of the plasma generation spaces Pa and Pb, the raw material evaporates can move from the plasma generation spaces Pa and Pb toward the substrate holder 13 and reach the substrate. . When the shutters 51a and 51b are positioned so as to cover the upper portions of the plasma generation spaces Pa and Pb, the raw material evaporation temporarily moves from the plasma generation spaces Pa and Pb toward the substrate holder 13 and reaches the substrate. It is done. In the present embodiment, even when the shutters 51a and 51 are positioned so as to cover the upper portions of the plasma generation spaces Pa and Pb, the gas from the gas introduction pipe 11b and the raw material evaporates from the vapor deposition sources 30a and 30b are generated by the plasma. Since the supply to the spaces Pa and Pb is not hindered, it is relatively easy to sustain the plasma in the plasma generation spaces Pa and Pb.

  Next, an ion gun 60 corresponding to the ion irradiation means of the present invention will be described. The ion gun 60 is for irradiating an ion beam toward the substrate in the vacuum chamber 11. In addition, by generating plasma with the above-described excitation means (high-frequency coils 17a and 17b, high-frequency power supplies 26a and 26b, etc.), ions are generated in the vacuum chamber 11, and these ions may reach the substrate. However, the excitation means described above is for actively exciting the evaporating cloud. In contrast to this, the ion irradiation means of the present invention is provided separately from the above-described excitation means in order to irradiate the substrate with high-energy ions.

  A gas cylinder 61 is connected to the ion gun 60 via a pipe, and gas such as oxygen gas, nitrogen gas, fluorine gas, and ozone gas can be introduced into the ion gun 60 from the gas cylinder 61. The flow rate of gas from the gas cylinder 61 is adjusted by the mass flow controller 63. The gas introduced into the ion gun 60 is ionized and excited by the ion gun 60, and the ionized and excited gas is irradiated into the vacuum chamber 11 as an ion beam. Therefore, an ion gun power source 62 that supplies power for gas ionization / excitation, ion acceleration, and the like is connected to the ion gun 60. Further, the ion gun 60 has a neutralizer function to neutralize space charge. As the ion gun 60, for example, a high frequency discharge type (Freeman) type, a thermal electron impact (Kaufman) type, a microwave type, a cold cathode type, or the like can be used.

  A shutter 64 is provided at a portion of the ion gun 60 where the ion beam is irradiated. A shutter drive motor 66 (see FIG. 4) is connected to the shutter 64 of this embodiment via a rotating rod 65. By driving the shutter drive motor 66, the rotating rod 65 rotates. The shutter 64 moves between a position where the upper part of the ion gun 60 is covered and a position where it is not covered as the rotating rod 65 rotates. When the shutter 64 is in a position that does not cover the upper portion of the ion gun 60, the ion beam can move toward the substrate holder 13 and reach the substrate. When the shutter 64 is in a position covering the upper portion of the ion gun 60, the ion beam is temporarily prevented from moving toward the substrate holder 13 and reaching the substrate.

  The vapor deposition apparatus 1 is further provided with a projector 71, a light receiver 72, a monitor 73, a monitor mask 74, a light projection side mirror 75, and a light reception side mirror 76 in order to monitor the film thickness of the formed thin film. . The light emitted from the projector 71 is reflected by the projector-side mirror 75 and reaches the monitor 73. The light reflected by the monitor 73 reaches the light receiver 72 via the light receiving side mirror 76. The film pressure of the thin film formed on the monitor 73 is monitored from the amount of change in light received by the light receiver 72.

  In the present embodiment, a plate-like monitor mask 74 is provided on the monitor 73 on the vapor deposition sources 30a, 30b side. A hole is provided in the monitor mask 74, and a thin film is formed on the monitor 73 only at a position corresponding to the hole of the monitor mask 74. Accordingly, if the position of the hole is moved by rotating the monitor mask 74 or the like, a thin film can be formed at a different position on the same monitor 73. Therefore, for example, when a thin film is laminated, when the formation of each layer of the thin film is started, the position of the hole in the monitor mask 74 is moved to form the thin film at a new location. The film thickness can be accurately monitored.

  FIG. 4 is a block diagram for explaining the function of the control means of the vapor deposition apparatus 1. The control device 80 includes a CPU that performs various controls, a ROM that stores an operation program for the CPU, a RAM that stores information as needed by the operation of the CPU, and the like. The control device 80 receives input of detection signals and the like from the light receiver 72, the thermocouple 13a, and the like. The control device 80 controls the heater power supply 24, the electron gun power supplies 25a and 25b, the high frequency power supplies 26a and 26b, the phase shifter 27, the ion gun power supply 62, the shutter drive motors 53a and 53b, the mass flow controllers 42 and 63, and the like. Is what you do. The control device 80 that controls the electron gun power supplies 25a and 25b corresponds to the power control means of the present invention. The phase shifter 27 and the control device 80 that controls the phase shifter 27 correspond to the phase control means of the present invention.

  The control device 80 performs various controls according to the operation of an external switch or the like or according to a predetermined control program. For example, in response to a signal from the thermocouple 13a during film formation, the output of the heater power supply 24 is adjusted so that the substrate (substrate holder 13) is maintained at a desired temperature. When the control device 80 receives a signal from the light receiver 72 and detects that a thin film having a predetermined film thickness has been deposited on the substrate, the control device 80 controls the shutter drive motors 53a, 53b and the like to interrupt the deposition. I do. Further, according to the film formation situation, the control device 80 is configured to give control signals to the high frequency power supplies 26a and 26b, the phase shifter 27, the mass flow controllers 42 and 63, etc., and the plasma state is adjusted via the control device 80. Do.

  Below, the method to form the thin film which laminated | stacked two types of thin films (for example, two types of thin films from which refractive index differs) using the vapor deposition apparatus 1 of this embodiment mentioned above is demonstrated.

First, the raw material Sa is filled in the crucible 31a, and the raw material Sb is filled in the crucible 31b. The raw material Sa corresponds to the first raw material of the present invention. The raw material Sb corresponds to the second raw material of the present invention. In this embodiment, the crucible 31a and the crucible 31b are filled with different raw materials, and a thin film in which two types of thin films are alternately stacked is formed. For example, silicon oxide (SiO ₂ ) is used as the raw material Sa, and tantalum oxide (Ta ₂ O ₅ ) is used as the raw material Sb. Next, the substrate is held by the substrate holder 13 and placed in the vacuum chamber 11. In this state, the inside of the vacuum chamber 11 is depressurized to a predetermined pressure. For example, it is adjusted to about 1 × 10 ⁻³ Pa or less. At this stage, the shutters 51a and 51b are in positions that cover the upper portions of the plasma generation spaces Pa and Pb, and the shutter 64 is in a position that covers the upper portions of the ion gun 60.

When the inside of the vacuum chamber 11 is stabilized at a predetermined pressure, the mass flow controller 42 is controlled to introduce a necessary gas from the gas cylinder 41 into the vacuum chamber 11 at a predetermined flow rate. For example, oxygen gas is introduced into the vacuum chamber 11 at about 50 ccm (sccm represents a flow rate per minute at 0 ° C. and 1 atm and is equal to cm ³ / min). Of course, if it is not necessary, the gas introduction from the gas cylinder 41 may not be performed.

  Further, the mass flow controller 63 is controlled to introduce gas into the ion gun 60, and power is supplied from the ion gun power source 62 to the ion gun, and ions of the gas introduced into the ion gun 60 are entered into the vacuum chamber 11 as an ion beam. Irradiate. At this time, the shutter 64 is disposed at a position covering the upper portion of the ion gun 60. Irradiation of the ion beam into the vacuum chamber 11 by the ion gun 60 is performed during deposition of the raw material Sa, which will be described later, and during deposition of the raw material Sb. The gas introduced into the ion gun 60 is appropriately selected according to the constituent elements of the thin film to be formed. For example, a reactive gas such as oxygen gas or nitrogen gas is introduced. By irradiating the thin film formed on the substrate with ions of the reactive gas, the kinetic energy of the reactive gas ion beam can be applied to the thin film, thereby forming a dense thin film.

  Subsequently, power supply to the electron guns 32a and 32b is started by the electron gun power supplies 25a and 25b. At this time, since the vapor deposition has not started yet, the power supply to the electron guns 32a and 32b is maintained to the minimum necessary. Next, the shutter drive motor 66 is driven to move the shutter 64 to a position that does not cover the upper portion of the ion gun 60, thereby irradiating the ion beam toward the substrate in the vacuum chamber 11. In addition, the shutter 64 is moved in this way, and power is supplied to the high-frequency coils 17a and 17b by the high-frequency power sources 26a and 26b to generate plasma in the plasma generation spaces Pa and Pb.

  By adjusting the gas flow rate, the power supplied to the high-frequency coils 17a and 17b, and the like by the control device 80, plasma in the standby state is generated in each of the plasma generation space Pa and the plasma generation space Pb, and this state is maintained. To do. In the present embodiment, the plasma in the standby state is maintained by adjusting the high-frequency coils 17a and 17b so that power is supplied so that the plasma does not disappear. The phase of the power supplied to the high frequency coils 17a and 17b is adjusted by the phase shifter 27. When the plasma in the standby state is stabilized, the deposition of the raw material Sa is started as a process corresponding to the first deposition process of the present invention.

  In vapor deposition of the raw material Sa, first, the power supplied to the electron gun 32a is raised to a predetermined value, and the raw material Sa is irradiated with an electron beam to generate a raw material vapor Sa 'that is an evaporated material of the raw material Sa. At the same time, the power supplied to the high-frequency coil 17a is increased to generate plasma during the deposition of the raw material Sa in the plasma generation space Pa. The plasma at the time of deposition of the raw material Sa is plasma in a state where the plasma density is higher than that in the standby state plasma. When the plasma during the material Sa vapor deposition is stabilized in the plasma generation space Pa, the shutter drive motor 53a is controlled to move the shutter 51a to a position that does not cover the upper part of the plasma generation space Pa. As a result, the material evaporant Sa ′ that has passed through the plasma generation space Pa moves in the direction of the substrate holder 13, and a part thereof adheres to the substrate, whereby the material Sa is deposited. In the present embodiment, the raw material Sa is vapor-deposited using the vapor deposition apparatus 1 including the high-frequency coils 17a and 17b covered with the cover members 18a and 18b, so that the raw material evaporated Sa ′ on the high-frequency coils 17a and 17b The material Sa is deposited while suppressing the adhesion.

  While the deposition of the raw material Sa is being performed, the control device 80 monitors a signal from the light receiver 72. When the controller 80 confirms that a thin film having a desired film thickness has been formed on the substrate by a signal from the light receiver 72, the controller 80 controls the shutter drive motor 53a to cover the shutter 51a with the upper part of the plasma generation space Pa. Move to. By moving the shutter 51a in this way, the evaporation of the material Sa is prevented by preventing the material evaporant Sa 'from moving in the direction of the substrate holder 13. Next, the power supplied to the electron gun 32a is lowered, and the power supplied to the high-frequency coil 17a is lowered to maintain the plasma in the standby state in the plasma generation space Pa.

  Next, vapor deposition of the raw material Sb is started as a process corresponding to the second vapor deposition process of the present invention. In vapor deposition of the raw material Sb, first, the power supplied to the electron gun 32b is raised to a predetermined value, and the raw material Sb is irradiated with an electron beam to generate a raw material evaporant Sb 'that is an evaporant of the raw material Sb. At the same time, the power supplied to the high-frequency coil 17b is increased to generate plasma during the deposition of the raw material Sb in the plasma generation space Pb. The plasma at the time of depositing the raw material Sb is a plasma having a higher plasma density than the plasma in the standby state. When the plasma during the raw material Sb deposition is stabilized in the plasma generation space Pb, the shutter drive motor 53b is controlled to move the shutter 51b to a position that does not cover the upper part of the plasma generation space Pb. Thereby, the raw material evaporant Sb 'that has passed through the plasma generation space Pb moves in the direction of the substrate holder 13 and a part thereof adheres to the substrate, whereby the raw material Sb is deposited. In the present embodiment, the raw material Sb is deposited on the high-frequency coils 17a and 17b by using the vapor deposition apparatus 1 including the high-frequency coils 17a and 17b covered with the cover members 18a and 18b. The raw material Sb is deposited while suppressing adhesion.

  The control device 80 monitors the signal from the light receiver 72 while the raw material Sb is being deposited. When the controller 80 confirms that a thin film having a desired film thickness has been formed on the substrate based on a signal from the light receiver 72, the controller 80 controls the shutter drive motor 53b to cover the shutter 51b over the plasma generation space Pb. Move to. By moving the shutter 51b in this way, the raw material evaporant Sb 'is prevented from moving in the direction of the substrate holder 13, and the deposition of the raw material Sb is completed. Next, the power supplied to the electron gun 32b is lowered, and the power supplied to the high-frequency coil 17b is lowered to maintain the plasma in the standby state in the plasma generation space Pb.

  By repeating the deposition of the raw material Sa and the deposition of the raw material Sb, a thin film with an increased number of layers can be formed.

  By forming the thin film as described above by using the vapor deposition apparatus 1 of the present embodiment, the following effects can be obtained.

In this embodiment, before the high frequency power supply 26 supplies power to the high frequency coils 17a and 17b to generate plasma in the plasma generation spaces Pa and Pb, an ion beam is irradiated from the ion gun 60 into the vacuum chamber 11 in advance. doing. By previously irradiating the inside of the vacuum chamber 11 with an ion beam, a large amount of ions and electrons that cause plasma to be generated can exist in the plasma generation spaces Pa and Pb. Conventionally, a pressure of about 3 × 10 ⁻² Pa has been required in order to generate plasma using a high frequency coil (in an RF inductive coupling type). However, as in the present embodiment, a large amount of ions and electrons that cause plasma to be generated exist, and plasma is generated in the plasma generation spaces Pa and Pb that are relatively closed spaces. Plasma can be generated in the plasma generation spaces Pa and Pb by pressure. Conventionally, in order to maintain the plasma, a pressure of 3.0 × 10 ⁻² Pa or more has been required. However, in this embodiment, since ions or the like are supplied from the ion gun 60, the pressure is 2.0. The plasma can be maintained at a low pressure of about × 10 ⁻² Pa. This makes it possible to form a thin film in a wider pressure range than in the past.

  In the present embodiment, vapor deposition is performed while generating plasma in the plasma generation spaces Pa and Pb by the high frequency coils 17a and 17b, whereby the raw material vapors Sa 'and Sb' are excited in the plasma generation spaces Pa and Pb. Therefore, compared with the case where the high frequency coils 17a and 17b are not provided, the reactive gas supplied from the gas cylinder 41 and the raw material vapors Sa 'and Sb' can be easily reacted. If the raw material evaporates Sa ′ and Sb ′ easily react with the reactive gas in this way, the thin film formation rate (deposition rate) while sufficiently reacting the raw material evaporates Sa ′ and Sb ′ with the reactive gas. Can be raised. In particular, in the present embodiment, since the gas introduction pipe 11b is disposed so that the gas discharge port of the gas introduction pipe 11b faces the plasma generation spaces Pa and Pb, the raw material vapors Sa ′ and Sb ′ and the reactive gas are sufficiently provided. It is easy to react to.

  For example, in the case where the thin film to be formed is an oxide, if oxygen gas is supplied as a reactive gas from the gas cylinder 41 to the plasma generation spaces Pa and Pb, the raw material vapor Sa ′, which has passed through the plasma generation spaces Pa and Pb, It becomes easy to react Sb ′ with oxygen gas. If the raw material evaporants Sa ′ and Sb ′ easily react with the oxygen gas in this way, the raw material evaporates Sa ′ and Sb ′ and the reactive gas are sufficiently reacted, and the formation rate of the thin film is increased. A thin film with few defects can be formed.

  On the other hand, the density of the excited species in the plasma in the plasma generation spaces Pa and Pb can be adjusted by adjusting the power supplied from the high frequency power supply 26 or adjusting the gas flow rate supplied from the gas cylinder 41. The quality of the film formed on the substrate can be controlled with high accuracy by changing the degree of easiness of reaction between the evaporated materials Sa ′ and Sb ′ and the reactive gas.

  Further, since the material evaporates Sa ′ and Sb ′ reaching the substrate are hit by the ion beam irradiated from the ion gun 60 on the substrate surface, a dense thin film can be formed. Furthermore, according to the vapor deposition apparatus 1, since the control of the high frequency power sources 26a and 26b and the control of the ion gun power source 62 can be performed independently, the film forming process conditions can be finely adjusted, and the thin film to be formed can be controlled. The performance can be precisely controlled.

  Further, in the present embodiment, since the cover members 18a and 18b are provided, it is possible to prevent the raw material vapors Sa 'and Sb' from adhering to the high-frequency coils 17a and 17b. In particular, in this embodiment, since the cover members 18a and 18b are provided so as to surround the inner peripheral side and the outer peripheral side of the high frequency coils 17a and 17b, the raw material evaporant Sa ′ generated from the crucible 31a is generated by the high frequency coil. It can suppress adhering to the outer peripheral side of 17b, or adhering raw material evaporant Sb 'generated in the crucible 31b to the outer peripheral side of the high frequency coil 17a. The plasma in the plasma generation spaces Pa and Pb can be stabilized by suppressing the attachment of the raw material evaporates Sa 'and Sb' to the high-frequency coils 17a and 17b.

  In the present embodiment, the plasma is not extinguished in the plasma generation space Pa while the source Sb is being deposited, that is, when the plasma during the source Sb deposition is generated in the plasma generation space Pb. , Maintain the plasma in standby state. Further, during the deposition of the source material Sa, that is, when the plasma at the time of deposition of the source material Sa is generated in the plasma generation space Pa, the plasma in the standby state is set so that the plasma does not disappear in the plasma generation space Pb. To maintain. That is, the power supply to the high frequency coil 17a and the power supply to the high frequency coil 17b are controlled independently so that the plasma is always maintained during the film formation in the plasma generation spaces Pa and Pb. By avoiding sudden changes in the atmosphere or the like in the vacuum chamber 11 caused by disappearance, it is possible to stabilize the film formation process and form a thin film of the same quality with good reproducibility.

  As described above, by forming a thin film using the vapor deposition apparatus 1 of the present embodiment, the film formation process can be stabilized by realizing a stable plasma state, and a uniform and high-quality thin film can be formed with good reproducibility. be able to.

Next, an experimental example is shown in which a thin film in which thin films of silicon oxide (SiO ₂ ) and tantalum oxide (Ta ₂ O ₅ ) are stacked is formed using the vapor deposition apparatus 1 of the present embodiment.

  In this experiment, an experiment for forming a thin film using the vapor deposition apparatus (1), the vapor deposition apparatus (2), and the vapor deposition apparatus (3) is performed. Although the vapor deposition apparatus (1) and the vapor deposition apparatus (2) include the ion gun 60, the vapor deposition apparatus does not include the high frequency coils 17a and 17b and the high frequency power supplies 26a and 26b as compared with the vapor deposition apparatus 1 of the present embodiment. It is. In addition, the vapor deposition apparatus (1) uses the model SID-1100D made from Shincron Co., Ltd. The vapor deposition apparatus (2) uses a model SID-1350D manufactured by Shincron Co., Ltd. The vapor deposition apparatus (3) is a vapor deposition apparatus having the same configuration as the vapor deposition apparatus 1 of the present embodiment, and includes high frequency coils 17a and 17b, cover members 18a and 18b, a high frequency power supply 26, a phase shifter 27, and matching circuits 29a and 29b. Except for the point etc. which are equipped with, it is the same as that of a vapor deposition apparatus (2).

  In the present experimental example, as the high-frequency coils 17a and 17b, copper pipes (tube diameter 6.35φ) wound in a spiral manner were used. The outer diameter of the high frequency coils 17a, 17b is 230φ. The high frequency coils 17a and 17b were provided at a position of about 150 mm from the raw material filled in the vapor deposition sources 30a and 30b. Incidentally, the high frequency coils 17a and 17b and the substrate holder 13 are separated from each other by about 900 mm. Thus, by arranging the high frequency coils 17a and 17b, the high frequency coils 17a and 17b are provided in the vicinity of the vapor deposition sources 30a and 30b. Note that the positions near the vapor deposition sources 30a and 30b in which the high-frequency coils 17a and 17b are arranged are not limited to the above values in the present experimental example, and if the high-frequency coils 17a and 17b of the present experimental example are used, the vapor deposition source 30a. 30b to a distance of about 100 mm to 300 mm.

Each of the vapor deposition apparatuses (1), (2), (3) includes two vapor deposition sources. In this experiment, one vapor deposition source is filled with silicon oxide (SiO ₂ ), and the other vapor deposition source is used as the vapor deposition source. filled with tantalum oxide _(Ta 2 _{O 5),} alternating silicon oxide (SiO ₂₎ and tantalum oxide _(Ta 2 _{O 5),} a thin film was formed as a laminate of the 50 layers or so. In the experiment using the vapor deposition apparatus (3), a thin film was formed by the thin film forming method of the above embodiment.

Table 1 shows the results of this experimental example.

“Substrate dome diameter” in Table 1 indicates the dome diameter of the substrate holder corresponding to the substrate holder 13. The “evacuation time” in Table 1 indicates the time required to depressurize the inside of the vacuum chamber to 6.0 × 10 ⁻⁴ Pa before the start of vapor deposition. “Standby time after film formation” in Table 1 indicates the time required for the vapor deposition apparatus to stand by after the film formation of all the layers has been completed in order to protect the ion gun 60. . The “film formation time” in Table 1 indicates the time required from the start of vapor deposition of the first layer to the end of vapor deposition of the last layer. The “film formation rate” in Table 1 is the rate at which a thin film is formed, and indicates the film formation rate for each of silicon oxide (SiO ₂ ) and tantalum oxide (Ta ₂ O ₅ ). “Cycle time” in Table 1 is the total time required for film formation, and indicates the time obtained by adding the above “evacuation time”, “waiting time after film formation”, and “film formation time”. ing. “Productivity” in Table 1 indicates the production amount of the thin film in each vapor deposition device on the basis of the production amount when the thin film is formed by using the vapor deposition device (1). Note that, in any case, a waiting time of about 2 minutes is required after one layer of silicon oxide (SiO ₂ ) is deposited and before the deposition of tantalum oxide (Ta ₂ O ₅ ) is started. After a single layer of tantalum oxide (Ta ₂ O ₅ ) deposition was completed, a waiting time of about 1 minute was provided before starting the deposition of silicon oxide (SiO ₂ ).

  Whichever apparatus is used, the substrate temperature is kept at about 250 ° C. during film formation, oxygen gas is introduced into the ion gun 60 at about 50 sccm, the acceleration voltage of the ion gun 60 is about 1000 V, and the acceleration current is about 1200 mA. It is.

In film formation using the vapor deposition apparatus (3), about 1 kW of electric power is supplied to the high-frequency coil 17a in order to generate plasma at the time of vapor deposition of silicon oxide (SiO ₂ ), and at the time of vapor deposition of tantalum oxide (Ta ₂ O ₅ ). In order to generate plasma, about 1 kW of electric power was supplied to the high frequency coil 17b. The plasma in the standby state was maintained by supplying power of about 200 W to the high frequency coils 17a and 17b. The inner peripheral covering members 18a ₁ and 18b ₁ of the cover members 18a and 18b in the vapor deposition apparatus (3) are made of fused quartz.

  As can be seen from the results in Table 1, when the thin film is formed by the thin film forming method of the present embodiment using the same vapor deposition apparatus (3) as the vapor deposition apparatus 1 of the present embodiment described above, the film formation rate is It turns out to be fast and excellent in productivity.

  Note that the productivity value when the vapor deposition apparatus (2) is used is larger than the productivity value when the vapor deposition apparatus (1) is used because the substrate dome diameter is large. At the same time, the large area of the thin film that can be formed at a time by arranging many substrates on the substrate dome is large.

5 and 6 show experimental results in which a tantalum oxide (Ta ₂ O ₅ ) thin film was formed. The experimental results shown in FIG. 5 and FIG. 6 show the experimental results when a thin film composed only of a tantalum oxide (Ta ₂ O ₅ ) layer is formed using the above-described vapor deposition apparatus (3). . That is, a thin film was formed by filling a vapor deposition source with tantalum oxide (Ta ₂ O ₅ ).

FIG. 5 is a table showing the refractive index of a tantalum oxide (Ta ₂ O ₅ ) thin film formed by using the vapor deposition apparatus (3). The table shown in FIG. 5 shows the refractive index with respect to wavelengths of 400, 450, 500, 550, 600, 650, and 700 nm for the tantalum oxide (Ta ₂ O ₅ ) thin film formed on each substrate. Each of the substrates “1” to “9” has a distance of 125, 182.5, 240, 297.5, 355, 412.5, 470, 521.5, and 585 mm in order from the rotation center of the substrate holder 13. Is arranged. FIG. 5 shows the standard deviation σ of the refractive index, the average value Av, and the variation coefficient CV for each wavelength.

FIG. 6 shows the spectral characteristics of a tantalum oxide (Ta ₂ O ₅ ) thin film formed using the vapor deposition apparatus (3).
From the experimental results shown in Table 1, FIG. 5 and FIG. 6, by forming a thin film using the vapor deposition apparatus (3), a good thin film with little variation in refractive index depending on the position of the substrate relative to the substrate holder 13 is obtained. It can be seen that the film can be formed at high speed.

  The embodiment described above can be modified, for example, as in the following (a) to (k). In the following description, the same members as those in the above embodiment are indicated by the same reference numerals, and the description thereof is omitted because it is the same as described above.

(A) In the above embodiment, the cover members 18a and 18b corresponding to the adhesion suppressing portion and the covering member of the present invention are the inner peripheral covering members 18a ₁ and 18b ₁ for covering the high frequency coils 17a and 17b from the inner peripheral side. The high frequency coil 17a is composed of outer peripheral covering members 18a ₂ and 18b ₂ for covering the outer peripheral side, the lower side, and the upper side. However, the configuration of the cover members 18a and 18b is not limited to this. For example, the inner peripheral covering members 18a ₁ and 18b ₁ are configured to cover the high frequency coils 17a and 17b from the inner peripheral side and the upper side, and the outer peripheral covering members 18a ₂ and 18b ₂ cover the high frequency coils 17a and 17b on the outer peripheral side and the lower side. You may comprise so that it may cover. Further, in the above embodiment has formed the outer periphery covering member 18b _2, 18a ₂ with a conductive material, be configured to form an insulator, the high-frequency coil 17a of the raw material evaporant, inhibits adhesion to 17b It is possible.

  (B) In the above-described embodiment, the case where a thin film in which two types of thin films are alternately stacked is formed by vapor deposition of the raw material Sb after vapor deposition of the raw material Sa has been described. However, it is also possible to form a thin film in which the raw material Sa and the raw material Sb are mixed by performing the vapor deposition of the raw material Sa and the vapor deposition of the raw material Sb at the same time. That is, the generation of the plasma during the deposition of the source material Sa in the plasma generation space Pa and the generation of the plasma during the deposition of the source material Sb in the plasma generation space Pa are performed simultaneously, and the deposition of the source material Sa and the deposition of the source material Sb are performed simultaneously. Can also be done.

  (C) In the above embodiment, when the source material Sa is deposited or the source material Sb is deposited, the shutter 64 is in a position not covering the upper portion of the ion gun 60 and the ion beam is irradiated toward the substrate. It was. However, it is also possible to move the shutter 64 to a position that covers the upper portion of the ion gun 60 when either vapor deposition of the raw material Sa or vapor deposition of the raw material Sb is performed. That is, it is possible to prevent the ion beam from being irradiated toward the substrate either when the raw material Sa is vapor-deposited or when the raw material Sb is vapor-deposited.

(D) In the above embodiment, the high frequency coils 17a and 17b and the vapor deposition sources 30a and 30b are provided. However, the high frequency coil 17b and the vapor deposition source 30b may be omitted.
In this case, the structure of the crucible 31a in the vapor deposition source 30a can be modified as shown in FIGS. 7 and 8, and the vapor deposition source 130 can be used instead of the vapor deposition source 30a. FIG. 7 is an explanatory diagram showing a schematic configuration of a vapor deposition apparatus 101 corresponding to the thin film forming apparatus of the present invention in which the vapor deposition apparatus 1 is modified. FIG. 8 is an explanatory view for explaining the structure of the crucible 31 a, as seen from the substrate holder 13.

  A vapor deposition apparatus 101 illustrated in FIG. 7 includes a crucible 131 on the bottom surface of the vacuum chamber 11. The crucible 131 has a generally donut shape as a whole, and is provided with a recess 131a formed in an annular shape for holding the raw material on the upper surface (see FIG. 8). In the example shown in FIG. 8, the recess 131a is formed in a continuous annular shape, but the recess 131a may be intermittently formed in an annular shape. The vapor deposition apparatus 101 is provided with a mechanism for rotating the crucible 131. In the example shown in FIG. 7, a rotating shaft 131 b that supports and rotates the crucible 131 is provided as a mechanism for rotating the crucible 131. The rotary shaft 131b is rotationally driven by a crucible drive motor (not shown) in the direction indicated by the arrow R in FIG.

  The high frequency coil 17a of the vapor deposition apparatus 101 is provided in the vicinity of the vapor deposition source 130, and is disposed so as to surround a part of the space near the electron gun 32a directly above the doughnut-shaped crucible 131. By supplying power to the high-frequency coil 17a, plasma can be generated in a plasma generation space that is a space surrounded by the high-frequency coil 17a immediately above the vapor deposition source 130. The electron beam from the electron gun 32a is irradiated to the raw material located directly under the high frequency coil 17a among the raw materials filled in the recess 131a of the crucible 131.

  A case will be described in which a thin film in which two types of thin films are alternately stacked is formed by performing vapor deposition of the raw material Sb after vapor deposition of the raw material Sa using the vapor deposition apparatus 101. First, the crucible 131 is filled with the raw material Sa and the raw material Sb. At this time, for example, as shown in FIG. 8, the raw material Sa and the raw material Sb are filled so as to be alternately arranged in a ring shape. In this state, the inside of the vacuum chamber 11 is depressurized to a predetermined pressure. At this stage, the raw material Sa is located immediately below the high frequency coil 17a, the shutter 51a is in a position covering the upper part of the plasma generation space, and the shutter 64 is in a position covering the upper part of the ion gun 60.

  When the inside of the vacuum chamber 11 is stabilized at a predetermined pressure, the mass flow controller 42 is controlled to introduce necessary gas into the vacuum chamber 11. Then, power is supplied from the ion gun power source 62 to the ion gun, and ions of the gas introduced into the ion gun 60 are irradiated into the vacuum chamber 11 as an ion beam. At this time, the shutter 64 is disposed at a position covering the upper portion of the ion gun 60. Irradiation of the ion beam into the vacuum chamber 11 is performed during the deposition of the raw material Sa, which will be described later, and during the deposition of the raw material Sb. Subsequently, power supply to the electron gun 32a is started. At this time, since the vapor deposition has not started yet, the power supply to the electron gun 32a is maintained to the minimum necessary.

  Next, the shutter 64 is moved to a position where the upper part of the ion gun 60 is not covered, and the ion beam is irradiated toward the substrate in the vacuum chamber 11. In addition, the shutter 64 is moved in this way, and power is supplied to the high frequency coil 17a to generate plasma in the plasma generation space.

  By adjusting the gas flow rate, the power supplied to the high frequency coil 17a, and the like by the control device 80, the plasma in the standby state is generated in the plasma generation space, and this state is maintained. When the plasma in the standby state is stabilized, vapor deposition of the raw material Sa is started thereafter. Thereafter, the material Sa is deposited in the same manner as in the above embodiment. When the deposition of the raw material Sa is finished, the power supplied to the electron gun 32a is lowered and the power supplied to the high-frequency coil 17a is lowered to maintain the plasma in the standby state in the plasma generation space.

  Next, in order to start the deposition of the raw material Sb, a crucible drive motor (not shown) is driven to rotate the crucible 131 so that the raw material Sb is positioned directly below the high-frequency coil 17a. Subsequently, when the plasma is stabilized in the plasma generation space, the deposition of the raw material Sb is performed in the same manner as the deposition of the raw material Sa. When the deposition of the raw material Sb is completed, the power supplied to the electron gun 32a is lowered, and the power supplied to the high-frequency coil 17a is lowered to maintain the standby plasma in the plasma generation space.

  Further, when the above-described deposition of the raw material Sa and the deposition of the raw material Sb are repeated, a crucible drive motor (not shown) is driven to rotate the crucible 131 so that the raw material Sa is positioned directly below the high-frequency coil 17a. . And the vapor deposition of the above-mentioned raw material Sa and the vapor deposition of the raw material Sb are repeated.

  When forming a thin film using the vapor deposition apparatus 101 like this embodiment, the kind of raw material can be increased / decreased easily compared with the case where the vapor deposition apparatus 1 of the said embodiment is used. That is, when the vapor deposition apparatus 1 is used, it is necessary to increase the number of vapor deposition sources, high frequency coils and the like according to the increase in the types of raw materials. If the raw materials are arranged, it is not necessary to increase the number of crucibles 131 and high-frequency coils.

  (E) As indicated by a broken line in FIG. 4, a plasma monitor 90 for monitoring the plasma state may be provided, and the control device 80 may be configured to receive a signal from the plasma monitor 90. Thus, film formation can be performed while determining the plasma state based on the signal from the plasma monitor 90. For example, the state of the plasma is determined based on a signal during film formation from the plasma monitor 90, and the high-frequency power sources 26a and 26b, the mass flow controllers 42 and 63, etc. are controlled so that a desired plasma state is obtained as necessary. I do.

  (F) FIG. 9 is an explanatory view showing a schematic configuration of a vapor deposition apparatus 201 corresponding to the thin film forming apparatus of the present invention in which the vapor deposition apparatus 1 is modified. In the vapor deposition apparatus 1, the high frequency coil 17a is provided so as to surround only the space immediately above the vapor deposition source 30a, and the high frequency coil 17b is provided so as to surround only the space immediately above the vapor deposition source 30b. However, it can be modified as shown in FIG. That is, in the vapor deposition apparatus 201 of FIG. 9, a high frequency coil 217 corresponding to the plasma electrode of the present invention is provided in the vacuum chamber 11 in place of the high frequency coil 17a and the high frequency coil 17b, and the high frequency coil 217 includes the vapor deposition source 30a and The space directly above the vapor deposition source 30b is enclosed. Also with this configuration, the raw material vapors Sa ′ and Sb ′ are easily reacted with oxygen gas or the like by being excited in the space surrounded by the high frequency coil 217. The vapor deposition apparatus 201 also includes a cover member 218 corresponding to the cover member 18a or the cover member 118a of the above embodiment, and the cover member 218 covers the high-frequency coil 217.

  (G) In the vapor deposition apparatus 1 described above, the high frequency coils 17a and 17b are provided so as to surround the space immediately above the vapor deposition sources 30a and 30b, and the cover members 18a and 18b cover the high frequency coils 17a and 17b. The raw material evaporant Sb ′ from the vapor deposition source 30b needs to be excited, but when the raw material evaporant Sa ′ from the vapor deposition source 30a does not need to be excited, the high frequency coil 17a and the cover member 18a are not provided. Alternatively, only the high frequency coil 17b and the cover member 18b may be provided.

  (H) FIG. 10 is an explanatory diagram showing a schematic configuration of a vapor deposition apparatus 301 corresponding to the thin film forming apparatus of the present invention in which the vapor deposition apparatus 1 is modified. In the vapor deposition apparatus 1, the high frequency coils 17a and 17b are provided so as to surround the space immediately above the vapor deposition sources 30a and 30b, and the cover members 18a and 18b cover the high frequency coils 17a and 17b. However, it can be modified as shown in FIG. That is, in the vapor deposition apparatus 301 of FIG. 10, only the high frequency coil 17b is provided without providing the high frequency coil 17a and the cover members 18a and 18b. And the partition wall 318 which divides between the vapor deposition source 30a and the high frequency coil 17b is set as the structure standingly arranged in the bottom face in the vacuum chamber 11. FIG. In this case, the partition wall 318 corresponds to the adhesion suppressing portion of the present invention.

  Since the vapor deposition apparatus 301 is used when it is not necessary to excite the raw material evaporation Sa ′ from the vapor deposition source 30a, the high frequency coil is not provided with 17a, but only the high frequency coil is provided with 17b. The vapor deposition apparatus 301 is not provided with the cover member 18b because it is used when the raw material evaporant Sb 'from the vapor deposition source 30b is a substance that hardly adheres to the high frequency coil 17b. Further, in the vapor deposition apparatus 301, a partition wall 318 is provided in order to prevent the raw material evaporant Sa 'from the vapor deposition source 30a from adhering to the high frequency coil 17b. Here, the partition wall 318 is a plate-like member, and is preferably formed of a conductor such as stainless steel, and the partition wall 318 is grounded.

  (I) In the above embodiment, the high frequency coils 17a, 17b, and 217 are used as the configuration corresponding to the excitation means of the present invention, and the so-called RF inductively coupled plasma is generated. In addition to the RF inductive coupling type, the plasma generation method includes an RF capacitive coupling type, a thermal electron impact type, a method using a microwave, and the like. The excitation means of the present invention can be configured differently from the above embodiment according to the method of generating these plasmas.

  FIG. 11 is an explanatory diagram showing a schematic configuration of a vapor deposition apparatus 401 provided with excitation means for generating plasma in an RF capacitive coupling type. As shown in FIG. 11, in the case of generating RF capacitively coupled plasma, plasma generating electrodes 417a and 417b corresponding to the plasma electrodes of the present invention are provided in the vicinity of the vapor deposition sources 30a and 30b. High-frequency power sources 426a and 426b corresponding to the excitation power source of the present invention are connected to the electrodes 417a and 417b. The plasma generating electrode 417a is composed of a pair of opposed flat electrodes, and the pair of flat electrodes are provided facing each other so as to surround a space immediately above the vapor deposition source 30a. Similarly to the plasma generation electrode 417a, the plasma generation electrode 417b is also provided so that a pair of flat electrodes face each other and surround a space immediately above the vapor deposition source 30b. The high-frequency power sources 426a and 426b apply high-frequency power of 100 KHz to 50 MHz to the plasma generation electrodes 417a and 417b, and supply power to the plasma generation electrodes 417a and 417b by the high-frequency power sources 426a and 426b. , 30b, plasma is generated in the space immediately above. Also in the vapor deposition apparatus 401, an equivalent to the partition wall 318 is provided to suppress the raw material evaporant from the vapor deposition source 30a from adhering to the plasma generating electrode 417b, or the raw material evaporant from the vapor deposition source 30b is plasma. It is possible to suppress adhesion to the generation electrode 417a. Note that only one of the plasma generation electrode 417a and the plasma generation electrode 417b may be provided.

  FIG. 12 is an explanatory diagram showing a schematic configuration of a vapor deposition apparatus 501 provided with excitation means when generating plasma in a thermoelectron impact type. As shown in FIG. 12, when the plasma is generated by the thermoelectron impact type, the hot cathodes 517a and 517b are provided in the vicinity of the vapor deposition sources 30a and 30b, and the hot cathodes 517a and 517b are provided with the excitation power source of the present invention. Are connected to the hot cathode power supplies 526a and 526b. The hot cathodes 517a and 517b are filaments formed of tungsten or thorium-tungsten. The hot cathodes 517a and 517b are provided in the vicinity of the vapor deposition sources 30a and 30b. By supplying electric power to the hot cathodes 517a and 517b by the hot cathode power sources 526a and 526b, the hot cathodes 517a and 517b emit thermal electrons, and plasma is generated in a space immediately above the vapor deposition sources 30a and 30b. The vapor deposition apparatus 501 is also provided with an equivalent to the partition wall 318 to suppress the evaporation of the raw material from the vapor deposition source 30a to the hot cathode 517b, or the raw material vapor from the vapor deposition source 30b is the hot cathode. It can suppress adhering to 517a. Note that only one of the hot cathode 517a and the hot cathode 517b may be provided.

  When a plasma generator using microwaves is used, the configuration is almost the same as that of the vapor deposition apparatus 1, but a microwave power source is used instead of the high-frequency power sources 26a and 26b. In the microwave power source, a 2.45 GHz macro wave is applied to generate plasma in a space immediately above the vapor deposition sources 30a and 30b. Note that the shape and the like of the high-frequency coils 17a and 17b are changed as appropriate for microwave discharge.

  (J) Cover members 18a, 18b, and 218 are provided in the above-described vapor deposition apparatuses 1, 101, and 201, and a partition wall 318 is provided in the vapor deposition apparatuses 301, 401, and 501. With this configuration, raw material evaporates and the like Adhering to the coils 17a, 17b, 217, plasma generating electrodes 417a, 417b, and hot cathodes 517a, 517b was suppressed. If the cover members 18a, 18b, 218 and the partition wall 318 are not provided, or if the deposition material slightly adheres to the high-frequency coil or the like even if the cover members 18a, 18b, 218 or the partition wall 318 are provided, abnormal discharge occurs. Therefore, the high frequency power supplies 26a, 26b, 426a, 426b, the hot cathode power supplies 526a, 526b, or the control device 80 can be configured to include abnormal discharge prevention means.

  The abnormal discharge prevention means includes high frequency power supplies 26a, 26b, 426a, 426b, high frequency coils 17a, 17b, 217, plasma generating electrodes 417a, 417b, hot cathodes 517a, 517b (hereinafter referred to as “high frequency coil 17a”), Means for applying power of frequency F from high frequency power supply 26a, etc. at a period 1 / f longer than frequency 1 / F of power applied by hot cathode power supplies 526a, 526b (hereinafter referred to as "high frequency power supply 26a, etc.") It is. For example, a frequency f lower than the frequency F of the power applied by the high frequency power supply 26a or the like is generated using a vibrator, and the power of the frequency F from the high frequency power supply 26a or the like is supplied to the high frequency coil 17a or the like with a period of 1 Apply intermittently with a period 1 / f longer than / F. For example, for the frequency F (= 13.56 MHz) of the high-frequency power sources 26a and 26b, the power from the high-frequency power sources 26a and 26b is generated at a lower frequency of 1 kHz to 400 kHz, preferably 10 to 100 kHz. Be supplied intermittently. Specifically, power as shown in FIG. 13 is applied.

  FIG. 13 shows the voltage applied to the plasma electrode. The vertical axis is voltage and the horizontal axis is time. FIG. 13A shows a case where the abnormal discharge preventing means of this embodiment is not provided, and FIG. 13B shows a case where the abnormal discharge preventing means of this embodiment is provided. In the present embodiment, as shown in FIG. 3B, the power of the frequency F for generating plasma is applied to the plasma electrode such as the high-frequency coil 17a using the abnormal discharge prevention means. An open time T is provided at a period of 1 / f so that the supply of power to the plasma electrode is stopped intermittently by applying f. Even if the raw material evaporate adheres to the plasma electrode and ions are likely to stay in the adhering raw material evaporate, the frequency F for generating plasma by applying electric power to the plasma electrode in this way The ions are released at the opening time T when the power of the current is interrupted. If ions are released, ions will not stay in the raw material evaporate attached to the plasma electrode, and the stable deposition process that suppresses the occurrence of abnormal discharge caused by the ions remaining in the raw material evaporate. Can be realized.

(K) In the above embodiment, silicon oxide (SiO ₂ ) and tantalum oxide (Ta ₂ O ₅ ) are used as raw materials to be filled in the crucibles 31a and 31b. However, the present invention is not limited to this. As raw materials to be filled in the crucibles 31a and 31b, aluminum (Al), titanium (Ti), zirconium (Zr), tin (Sn), chromium (Cr), tantalum (Ta), tellurium (Te), iron (Fe), Metals such as magnesium (Mg), hafnium (Hf), nickel-chromium (Ni—Cr), and indium-tin (In—Sn) can also be used. Moreover, compounds of these metals, for example, Al ₂ O ₃ , TiO ₂ , ZrO ₂ , Ta ₂ O ₅ , HfO _2, etc. can also be used. Of course, the raw materials held in the crucibles 31a and 31b may be the same.

When these raw materials are used, the gas supplied from the gas cylinders 41 and 61 is appropriately replaced with oxygen gas, nitrogen gas, fluorine gas, ozone gas, etc., so that Al ₂ O ₃ , TiO ₂ , ZrO ₂ , Ta ₂ O ₅ , SiO ₂ , Nb ₂ O ₅ , HfO ₂ , MgF ₂ or other optical film or insulating film, ITO conductive film, Fe ₂ O ₃ magnetic film, TiN, CrN, TiC or other super hard film be able to.

It is explanatory drawing which shows schematic structure of the thin film forming apparatus which concerns on this invention. FIG. 2 is a diagram illustrating an adhesion suppression unit. FIG. 3 is a diagram illustrating an adhesion suppression unit. It is a block diagram explaining the function of the control means of the thin film forming apparatus which concerns on this invention. FIG. 5 shows experimental results when a thin film is formed using the thin film forming apparatus according to the present invention. FIG. 6 shows experimental results when a thin film is formed using the thin film forming apparatus according to the present invention. It is explanatory drawing which shows schematic structure of the thin film forming apparatus which concerns on another embodiment. It is explanatory drawing explaining the structure of a crucible. It is explanatory drawing which shows schematic structure of the thin film forming apparatus which concerns on another embodiment. It is explanatory drawing which shows schematic structure of the thin film forming apparatus which concerns on another embodiment. It is explanatory drawing which shows schematic structure of the thin film forming apparatus which concerns on another embodiment. It is explanatory drawing which shows schematic structure of the thin film forming apparatus which concerns on another embodiment. The voltage applied to the plasma electrode is shown.

Explanation of symbols

1, 101, 201, 301, 401, 501 Deposition apparatus 11 Vacuum tank 11a Pipe 11b Gas introduction pipe 12 Vacuum pump 13 Substrate holder 13a Thermocouple 14 Heater 15 Correction plates 17a, 17b, 217 High-frequency coils 18a, 18b, 118a, 118b, 218 Cover members 18a1, 18b1, 118a1 Inner periphery covering members 18a2, 18b2, 118a2 Outer periphery covering members 24 Heater power supplies 25a, 25b Electron gun power supplies 26a, 26b, 426a, 426b High frequency power supplies 27 Phase shifters 29a, 29b Matching circuit 30a, 30b, 130 Deposition source 31a, 31b, 131 Crucible 32a, 32b Electron gun 41, 61 Gas cylinder 42, 63 Mass flow controller 51a, 51b, 64 Shutter 52a, 52b, 65 Rotating rod 53a, 53b, 66 Sha Ion motor 62 ion gun 62 ion gun power supply 71 projector 72 light receiver 73 monitor 74 monitor mask 75 light projection side mirror 76 light reception side mirror 80 control device 90 plasma monitor 118a1_d inner circumference lower side covering member 118a1_u inner circumference upper side covering member 131a recess 131b Rotating shaft 318 Partition walls 417a, 417b Plasma generating electrodes 517a, 517b Hot cathode 526a, 526b Hot cathode power source ha1, engaging piece ha2, engaging portion ho insertion hole m, support groove Pa, Pb plasma generating space Sa, Sb raw material Sa ′, Sb 'Raw material evaporate W1 Side wall surface W2 Upper wall surface W3 Lower wall surface

Claims (22)

In a thin film forming apparatus for forming a thin film by adhering a raw material vapor generated by heating a raw material in a vacuum chamber to a substrate,
A substrate holding means disposed in the vacuum chamber for holding the substrate;
A deposition source for evaporating the raw material to generate a raw material evaporant;
Excitation means for exciting the raw material evaporate evaporated from the deposition source by forming a plasma above the deposition source;
An ion irradiation means for irradiating ions toward the substrate,
The excitation means suppresses adhesion of a plasma electrode disposed in the vacuum chamber, an excitation power source for applying power to the plasma electrode, and a raw material vapor generated from the vapor deposition source to the plasma electrode. A thin film forming apparatus comprising: an adhesion suppressing portion for performing the operation.   The plasma electrode is composed of a high-frequency coil that receives high-frequency power from the excitation power source to form plasma by high-frequency discharge, and is disposed so as to surround a space immediately above the vapor deposition source. The thin film forming apparatus according to claim 1. In a thin film forming apparatus for forming a thin film by adhering a raw material vapor generated by heating a raw material in a vacuum chamber to a substrate,
A substrate holding means disposed in the vacuum chamber for holding the substrate;
At least two deposition sources for evaporating the raw material to generate a raw material evaporant;
Excitation means for exciting the raw material evaporate evaporated from the vapor deposition source by generating plasma at a position above the vapor deposition source of at least one of the vapor deposition sources;
An ion irradiation means for irradiating ions toward the substrate,
The excitation means includes a plasma electrode disposed in the vacuum chamber, an excitation power source for applying electric power to the plasma electrode, and a raw material vapor generated from at least one of the vapor deposition sources. A thin film forming apparatus comprising: an adhesion suppressing portion for suppressing adhesion to the substrate. The plasma electrode is composed of a high-frequency coil that receives high-frequency power from the excitation power source to form plasma by high-frequency discharge, and corresponds to at least one of the deposition sources. Placed so as to surround the space directly above
The adhesion suppression unit is configured to suppress the raw material vapor generated from at least one of the vapor deposition sources from adhering to the high-frequency coil disposed corresponding to another evaporation source. The thin film forming apparatus according to claim 3. In a thin film forming apparatus for forming a thin film by adhering a raw material vapor generated by heating a raw material in a vacuum chamber to a substrate,
A substrate holding means disposed in the vacuum chamber for holding the substrate;
At least two deposition sources for evaporating the raw material to generate a raw material evaporant;
Excitation means for exciting raw material evaporates evaporated from the vapor deposition source by generating a plasma above each of the at least two vapor deposition sources;
An ion irradiation means for irradiating ions toward the substrate,
The excitation means includes a plasma electrode disposed in the vacuum chamber, an excitation power source for applying electric power to the plasma electrode, and a raw material vapor generated from at least one of the vapor deposition sources. A first plasma electrode arranged to correspond to any one of the at least two vapor deposition sources, and an adhesion suppression portion for suppressing adhesion to the plasma. A second plasma electrode arranged corresponding to one of the other vapor deposition sources,
The adhesion suppression unit suppresses the raw material vapor generated from at least one of the vapor deposition sources from adhering to at least one of the first plasma electrode and the second plasma electrode. A thin film forming apparatus characterized by being configured. The excitation power source includes a first excitation power source for applying power to the first plasma electrode and a second excitation power source for applying power to the second plasma electrode,
6. The thin film forming apparatus according to claim 5, further comprising power control means for independently controlling power supplied from the excitation power source to the first plasma electrode and the second plasma electrode.   A phase of power having a predetermined frequency applied from the first excitation power source to the first plasma electrode and a phase of power having a predetermined frequency applied from the second excitation power source to the second plasma electrode. The thin film forming apparatus according to claim 6, further comprising phase control means for controlling.   The thin film according to claim 1, wherein the adhesion suppressing portion is a covering member provided so as to surround the plasma electrode. Forming equipment.   5. The thin film forming apparatus according to claim 2, wherein the adhesion suppressing unit is configured by a covering member provided so as to surround an inner peripheral side and an outer peripheral side of the high-frequency coil. The covering member is composed of an inner covering member provided on the inner peripheral side of the high-frequency coil and an outer covering member provided on the outer peripheral side of the plasma electrode,
The inner covering member is formed of an insulator, and the outer covering member is formed of a conductor;
The thin film forming apparatus according to claim 2, wherein the outer covering member is grounded. The adhesion suppressing portion is constituted by a covering member provided so as to surround at least the inner peripheral side of the high-frequency coil,
The covering member has a first inner covering member provided on the inner peripheral side of the high-frequency coil, and a second inner covering member disposed at a predetermined interval from the first inner covering member. The thin film forming apparatus according to claim 2, wherein the thin film forming apparatus is configured. In a thin film forming apparatus for forming a thin film by adhering a raw material vapor generated by heating a raw material in a vacuum chamber to a substrate,
A substrate holding means disposed in the vacuum chamber for holding the substrate;
A deposition source for evaporating the raw material to generate a raw material evaporant;
Excitation means for exciting the raw material evaporate evaporated from the deposition source by forming a plasma above the deposition source;
An ion irradiation means for irradiating ions toward the substrate,
The excitation means includes a plasma electrode disposed in the vacuum chamber, and an excitation power source for applying electric power to the plasma electrode at a predetermined frequency.
An apparatus for forming a thin film, comprising: an abnormal discharge preventing unit that intermittently applies electric power of a predetermined frequency from the excitation power source to the plasma electrode at a cycle longer than the cycle of the predetermined frequency. Evaporation stop means for temporarily preventing the raw material evaporant generated in the vapor deposition source from reaching the substrate;
The vapor deposition stopping means includes a shutter member, and a shutter member driving unit capable of positioning the shutter member between the plasma electrode and the substrate holding means. The thin film forming apparatus according to claim 12. In order to irradiate ions while generating a raw material evaporate by heating the raw material filled in the vapor deposition source in the vacuum chamber, generating plasma in the space above the vapor deposition source by the excitation means for generating plasma In the thin film formation method of forming a thin film by performing vapor deposition on the substrate while irradiating the substrate with ions by the ion irradiation means of
A method of forming a thin film, characterized in that vapor deposition is performed on the substrate while suppressing the evaporation of the raw material from adhering to the excitation means. In order to irradiate ions while generating a raw material evaporate by heating the raw material filled in the vapor deposition source in the vacuum chamber, generating plasma in the space above the vapor deposition source by the excitation means for generating plasma In the thin film formation method of forming a thin film by performing vapor deposition on the substrate while irradiating the substrate with ions by the ion irradiation means of
A method of forming a thin film, characterized in that vapor deposition is performed on the substrate while generating plasma in a limited space immediately above the vapor deposition source by the excitation means. In order to irradiate ions while generating a raw material evaporate by heating the raw material filled in the vapor deposition source in the vacuum chamber, generating plasma in the space above the vapor deposition source by the excitation means for generating plasma In the thin film formation method of forming a thin film by performing vapor deposition on the substrate while irradiating the substrate with ions by the ion irradiation means of
The generation of plasma by the excitation means is performed by discharging by applying power of a predetermined frequency to the plasma electrode installed in the vacuum chamber,
A method for forming a thin film, comprising: intermittently applying power of the predetermined frequency to the plasma electrode at a period longer than the period of the predetermined frequency when plasma is generated by the excitation means. In a thin film forming method of forming a thin film on a substrate using a thin film forming apparatus including a first vapor deposition source and a second vapor deposition source in a vacuum chamber,
The first raw material filled in the first vapor deposition source is heated and vapor deposition is performed on the substrate while generating plasma in a space immediately above the first vapor deposition source by excitation means for generating plasma. A first vapor deposition step to be performed;
Performing a second vapor deposition step in which the second raw material charged in the second vapor deposition source is heated and vapor deposited on the substrate;
Maintaining the plasma in a space directly above the first deposition source during the second deposition step;
A method of forming a thin film, characterized in that, in at least one of the first vapor deposition step and the second vapor deposition step, ions are irradiated toward the substrate by an ion irradiation means for irradiating ions into the vacuum chamber. .   18. The thin film forming method according to claim 17, wherein the second vapor deposition step is performed while suppressing the evaporation of the raw material of the second raw material from adhering to the excitation unit. Performing the first vapor deposition step while suppressing the evaporation of the raw material of the first raw material from adhering to the excitation means;
Plasma is generated in a space immediately above the second vapor deposition source by the excitation means for generating plasma, and the second evaporation source material is suppressed from adhering to the excitation means. The thin film forming method according to claim 17, wherein a vapor deposition step is performed. In the first vapor deposition step, plasma is generated in a space immediately above the first vapor deposition source by a first excitation unit provided corresponding to the first vapor deposition source,
In the second vapor deposition step, plasma is generated in a space immediately above the second vapor deposition source by a second excitation means provided corresponding to the second vapor deposition source,
Performing the first vapor deposition step while suppressing the evaporation of the raw material of the first raw material from adhering to the second excitation means;
20. The thin film forming method according to claim 19, wherein the second vapor deposition step is performed while suppressing the evaporation of the raw material of the second raw material from adhering to the first excitation unit.   21. The reactive gas ions are irradiated by the ion irradiation means in at least one of the first vapor deposition step and the second vapor deposition step. The thin film formation method as described in one.   The thin film forming method according to any one of claims 17 to 21, wherein the first vapor deposition step and the second vapor deposition step are performed simultaneously.

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