JP6068213B2 - Plating material - Google Patents
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- JP6068213B2 JP6068213B2 JP2013054805A JP2013054805A JP6068213B2 JP 6068213 B2 JP6068213 B2 JP 6068213B2 JP 2013054805 A JP2013054805 A JP 2013054805A JP 2013054805 A JP2013054805 A JP 2013054805A JP 6068213 B2 JP6068213 B2 JP 6068213B2
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- 238000007747 plating Methods 0.000 title claims description 114
- 239000000463 material Substances 0.000 title claims description 68
- 239000000758 substrate Substances 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 4
- 238000005452 bending Methods 0.000 description 27
- NNFCIKHAZHQZJG-UHFFFAOYSA-N potassium cyanide Chemical compound [K+].N#[C-] NNFCIKHAZHQZJG-UHFFFAOYSA-N 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 238000009713 electroplating Methods 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000005096 rolling process Methods 0.000 description 4
- VDMJCVUEUHKGOY-JXMROGBWSA-N (1e)-4-fluoro-n-hydroxybenzenecarboximidoyl chloride Chemical compound O\N=C(\Cl)C1=CC=C(F)C=C1 VDMJCVUEUHKGOY-JXMROGBWSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000011669 selenium Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 241000156302 Porcine hemagglutinating encephalomyelitis virus Species 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- ISDDBQLTUUCGCZ-UHFFFAOYSA-N dipotassium dicyanide Chemical compound [K+].[K+].N#[C-].N#[C-] ISDDBQLTUUCGCZ-UHFFFAOYSA-N 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- HKSGQTYSSZOJOA-UHFFFAOYSA-N potassium argentocyanide Chemical compound [K+].[Ag+].N#[C-].N#[C-] HKSGQTYSSZOJOA-UHFFFAOYSA-N 0.000 description 2
- KYEKHFSRAXRJBR-UHFFFAOYSA-M potassium;selenocyanate Chemical compound [K+].[Se-]C#N KYEKHFSRAXRJBR-UHFFFAOYSA-M 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 229910017392 Au—Co Inorganic materials 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 238000001887 electron backscatter diffraction Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- Electroplating Methods And Accessories (AREA)
Description
本発明は、めっき材に関し、特に、導電性基材からなる一対の端子の一方の端子が他方の端子に当接して接続される端子構造に使用されるめっき材に関する。 The present invention relates to a plating material, and more particularly to a plating material used for a terminal structure in which one terminal of a pair of terminals made of a conductive base material is in contact with and connected to the other terminal.
従来、導電性基材からなる一対の端子の一方の端子が他方の端子に当接して接続される端子構造では、銅や銅合金などの導電性基材の表面にＡｇめっきを施したＡｇめっき材からなる端子が使用されている（例えば、特許文献１参照）。特に、Ａｇめっき材は、表面接触抵抗が低く、耐熱性と耐摩耗性に優れていることから、自動車、情報通信機器、産業機器などに使用する様々な接続端子の材料として使用されている。 Conventionally, in a terminal structure in which one terminal of a pair of terminals made of a conductive base material is in contact with and connected to the other terminal, Ag plating is performed by applying Ag plating to the surface of the conductive base material such as copper or copper alloy. The terminal which consists of material is used (for example, refer patent document 1). In particular, an Ag plating material has low surface contact resistance and is excellent in heat resistance and wear resistance, and is therefore used as a material for various connection terminals used in automobiles, information communication equipment, industrial equipment, and the like.
このようなＡｇめっき材を、電気自動車（ＥＶ）やプラグインハイブリッド車（ＰＨＥＶ）と外部供給電源とを電気的に接続する充電システム用接続端子などの材料として使用する場合、グリスレスで使用しても、高い耐摩耗性を維持する必要がある。そのため、接続端子を使用する際に一方の端子が他方の端子上を摺動する時にかかる荷重で要求される摺動耐久回数（耐久可能な繰り返し摺動回数）に応じて、導電性基材上に形成するＡｇめっき皮膜を厚くする必要がある。 When such an Ag plating material is used as a material for a connection terminal for a charging system that electrically connects an electric vehicle (EV) or plug-in hybrid vehicle (PHEV) to an external power supply, it is used in a greaseless manner. However, it is necessary to maintain high wear resistance. For this reason, when using a connection terminal, depending on the number of sliding durability required for the load applied when one terminal slides on the other terminal It is necessary to thicken the Ag plating film to be formed.
例えば、Ａｇめっき材を接続端子の材料として使用する場合、Ａｇめっき皮膜の厚さを５．０μｍ程度にすると、荷重０．５Ｎ程度では摺動耐久回数が１０００回程度であるが、荷重２．０Ｎ程度の高い荷重では摺動耐久回数が１００回程度に低下する。そのため、Ａｇめっき材を、電気自動車（ＥＶ）やプラグインハイブリッド車（ＰＨＥＶ）の充電システム用接続端子などの材料として使用する場合には、導電性基材上に形成するＡｇめっき皮膜をさらに厚くする必要がある。 For example, when an Ag plating material is used as the connection terminal material, if the thickness of the Ag plating film is about 5.0 μm, the sliding durability is about 1000 times at a load of about 0.5 N. With a high load of about 0N, the number of sliding durability decreases to about 100 times. Therefore, when the Ag plating material is used as a material for a connection terminal for a charging system of an electric vehicle (EV) or a plug-in hybrid vehicle (PHEV), the Ag plating film formed on the conductive base material is further thickened. There is a need to.
しかし、Ａｇめっき皮膜を厚くすると、めっきに要する時間が長くなって生産性が低下するという問題がある。また、Ａｇめっき皮膜を厚くすると、Ａｇめっき材の曲げ加工性が悪化するため、フープめっきを行うのが困難になり、Ａｇめっき材を端子の形状に曲げ加工した後に個々にめっきを施すことが必要になるので、生産性が低下し、めっき面積が増加してコストが増加するという問題がある。一方、Ａｇめっき皮膜が薄過ぎると、耐摩耗性が低下するという問題がある。 However, when the Ag plating film is thickened, there is a problem that the time required for plating becomes longer and the productivity is lowered. Further, if the Ag plating film is thickened, the bending workability of the Ag plating material deteriorates, so that it becomes difficult to perform the hoop plating, and the Ag plating material can be individually plated after being bent into the shape of the terminal. Since this is necessary, there is a problem that productivity is reduced, plating area is increased, and cost is increased. On the other hand, if the Ag plating film is too thin, there is a problem that the wear resistance is lowered.
このような問題を解決するため、本出願人は、導電性基材からなる一対の端子の一方の端子の突起部が他方の端子の略平坦部に当接して接続される端子構造において、一方の端子の突起部の表面に下地Ａｇめっき皮膜を介して厚さ０．０１〜０．３μｍのＡｕめっき皮膜を形成し、他方の端子の略平坦部の表面の一方の端子の突起部に当接する部分に下地Ａｇめっき皮膜を介して厚さ１．０〜５．０μｍのＡｕめっき皮膜を形成することにより、導電性基材上に形成するめっき皮膜を薄くしても、低い表面接触抵抗と良好な耐熱性を維持しながら、耐摩耗性を向上させることができる端子構造を提案している（特願２０１２−００８２８６）。 In order to solve such a problem, the applicant of the present invention, in the terminal structure in which the protruding portion of one terminal of the pair of terminals made of a conductive base material is connected in contact with the substantially flat portion of the other terminal, An Au plating film having a thickness of 0.01 to 0.3 μm is formed on the surface of the protruding part of the terminal of the other terminal via a base Ag plating film, and this is applied to the protruding part of one terminal on the surface of the substantially flat part of the other terminal. By forming an Au plating film having a thickness of 1.0 to 5.0 μm on the contact portion with a base Ag plating film, even if the plating film formed on the conductive substrate is thin, low surface contact resistance A terminal structure that can improve wear resistance while maintaining good heat resistance has been proposed (Japanese Patent Application No. 2012-008286).
しかし、この端子構造のめっき材では、導電性基材上に形成するめっき皮膜を薄くしても、低い表面接触抵抗と良好な耐熱性を維持しながら、耐摩耗性を向上させることができるものの、曲げ加工性が著しく低下する場合があり、端子の形状に加工する際にめっき皮膜の表面に割れが生じて、素材が露出してしまうという問題がある。 However, with this terminal structure plating material, although the plating film formed on the conductive substrate can be made thin, it can improve wear resistance while maintaining low surface contact resistance and good heat resistance. In some cases, the bending workability may be remarkably deteriorated, and when processing into the shape of the terminal, the surface of the plating film is cracked and the material is exposed.
したがって、本発明は、このような従来の問題点に鑑み、導電性基材上にＡｇめっき皮膜を介してＡｕめっき皮膜が形成されためっき材において、曲げ加工性が良好なめっき材を提供することを目的とする。 Therefore, in view of such a conventional problem, the present invention provides a plating material having a good bending workability in a plating material in which an Au plating film is formed on a conductive substrate via an Ag plating film. For the purpose.
本発明者らは、上記課題を解決するために鋭意研究した結果、導電性基材上に下地層としてＡｇめっき皮膜が形成され、この下地層の表面にＡｕめっき皮膜が形成されためっき材において、Ａｇめっき皮膜の｛２００｝方位の面積分率を１５％以上にすることにより、曲げ加工性が良好なめっき材を製造することができることを見出し、本発明を完成するに至った。 As a result of diligent research to solve the above problems, the present inventors have found that a plating material in which an Ag plating film is formed as a base layer on a conductive substrate and an Au plating film is formed on the surface of the base layer. The inventors have found that a plating material with good bending workability can be produced by setting the area fraction of the {200} orientation of the Ag plating film to 15% or more, and the present invention has been completed.
すなわち、本発明によるめっき材は、導電性基材上に下地層としてＡｇめっき皮膜が形成され、この下地層の表面にＡｕめっき皮膜が形成されためっき材において、Ａｇめっき皮膜の｛２００｝方位の面積分率が１５％以上であることを特徴とする。このめっき材において、Ａｕめっき皮膜の厚さが０．０１〜５μｍであるのが好ましく、Ａｇめっき皮膜の厚さが１〜２０μｍであるのが好ましい。また、導電性基材が銅または銅合金からなるのが好ましい。 That is, the plating material according to the present invention has a {200} orientation of the Ag plating film in a plating material in which an Ag plating film is formed as a base layer on a conductive substrate and an Au plating film is formed on the surface of the base layer. The area fraction is 15% or more. In this plated material, the thickness of the Au plating film is preferably 0.01 to 5 μm, and the thickness of the Ag plating film is preferably 1 to 20 μm. Moreover, it is preferable that an electroconductive base material consists of copper or a copper alloy.
また、本発明による接点または端子部品は、上記のめっき材を材料として用いたことを特徴とする。 The contact or terminal component according to the present invention is characterized by using the above-described plating material as a material.
なお、本明細書中において、「｛２００｝方位の面積分率」とは、銀めっき材の表面の面積に対して、銀めっき材の表面に垂直な方向（ＮＤ）に｛２００｝方位を（角度許容差１０°まで）向けている結晶が占める面積の割合（％）をいう。また、「Ａｕめっき皮膜」には、純Ａｕからなるめっき皮膜の他、Ａｕ−Ｃｏ合金などの硬質のＡｕ合金からなるめっき皮膜も含まれる。 In this specification, “area fraction of {200} orientation” refers to the {200} orientation in the direction (ND) perpendicular to the surface of the silver plating material with respect to the surface area of the silver plating material. It refers to the ratio (%) of the area occupied by the oriented crystal (up to an angle tolerance of 10 °). The “Au plating film” includes a plating film made of a hard Au alloy such as an Au—Co alloy in addition to a plating film made of pure Au.
本発明によれば、導電性基材上にＡｇめっき皮膜を介してＡｕめっき皮膜が形成されためっき材において、曲げ加工性が良好なめっき材を提供することができる。 ADVANTAGE OF THE INVENTION According to this invention, the plating material with favorable bending workability can be provided in the plating material in which Au plating film was formed through the Ag plating film on the electroconductive base material.
本発明によるめっき材の実施の形態は、導電性基材上に下地層としてＡｇめっき皮膜が形成され、この下地層の表面にＡｕめっき皮膜が形成されためっき材において、Ａｇめっき皮膜の｛２００｝方位の面積分率が１５％以上、好ましくは２５％以上である。 The embodiment of the plating material according to the present invention is a plating material in which an Ag plating film is formed as a base layer on a conductive substrate, and an Au plating film is formed on the surface of the base layer. } The area fraction of the orientation is 15% or more, preferably 25% or more.
このようにＡｇめっき皮膜の｛２００｝方位の面積分率を１５％以上にすることにより、Ａｇめっき皮膜中の転位密度を減少させて、めっき材の曲げ加工の際の剪断帯の発生を低減し、このような曲げ加工性が良好なＡｇめっき皮膜の表面にＡｕめっき皮膜を形成することにより、曲げ加工性に加えて、低い表面接触抵抗と良好な耐熱性を維持しながら、耐摩耗性を向上させることができる。 In this way, by making the area fraction of the {200} orientation of the Ag plating film 15% or more, the dislocation density in the Ag plating film is reduced, and the generation of shear bands during bending of the plating material is reduced. By forming an Au plating film on the surface of such an Ag plating film with good bending workability, in addition to bending workability, it maintains wear resistance while maintaining low surface contact resistance and good heat resistance. Can be improved.
このめっき材において、Ａｕめっき皮膜の厚さが０．０１〜５μｍであるのが好ましく、０．０３〜２．５μｍであるのがさらに好ましい。また、Ａｇめっき皮膜の厚さが１〜２０μｍであるのが好ましく、３〜１０μｍであるのがさらに好ましい。また、導電性基材が銅または銅合金からなるのが好ましい。 In this plating material, the thickness of the Au plating film is preferably 0.01 to 5 μm, and more preferably 0.03 to 2.5 μm. Moreover, it is preferable that the thickness of Ag plating film is 1-20 micrometers, and it is more preferable that it is 3-10 micrometers. Moreover, it is preferable that an electroconductive base material consists of copper or a copper alloy.
このめっき材の下地層としてのＡｇめっき皮膜は、シアン化銀カリウム（ＫＡｇ（ＣＮ）２）と、シアン化カリウム（ＫＣＮ）と、３〜３０ｍｇ／Ｌのセレノシアン酸カリウム（ＫＳｅＣＮ）とからなり、セレン濃度が５〜１５ｍｇ／Ｌであり且つフリーシアンに対するＡｇの質量比が０．９〜１．８であるＡｇめっき浴中において電気めっきを行うことによって形成することができる。この電気めっきの際の液温は、好ましくは１０〜４０℃、さらに好ましくは１５〜３０℃であり、電流密度は、好ましくは１〜１５Ａ／ｄｍ２、さらに好ましくは３〜１０Ａ／ｄｍ２である。 The Ag plating film as an underlayer of the plating material is composed of silver potassium cyanide (KAg (CN) 2 ), potassium cyanide (KCN), and 3 to 30 mg / L potassium selenocyanate (KSeCN), and has a selenium concentration. Can be formed by performing electroplating in an Ag plating bath in which the mass ratio of Ag to free cyan is 0.9 to 1.8. The liquid temperature during this electroplating is preferably 10 to 40 ° C., more preferably 15 to 30 ° C., and the current density is preferably 1 to 15 A / dm 2 , more preferably 3 to 10 A / dm 2 . is there.
以下、本発明によるめっき材の実施例について詳細に説明する。 Hereinafter, the example of the plating material by the present invention is described in detail.
［実施例１］
まず、被めっき材として６７ｍｍ×５０ｍｍ×０．３ｍｍの純銅板を用意し、この被めっき材とＳＵＳ板をアルカリ脱脂液に入れ、被めっき材を陽極とし、ＳＵＳ板を陰極として、電圧５Ｖで３０秒間電解脱脂し、水洗した後、３％硫酸中で１５秒間酸洗することによって前処理を行った。
[Example 1]
First, a 67 mm × 50 mm × 0.3 mm pure copper plate is prepared as a material to be plated, and the material to be plated and the SUS plate are put in an alkaline degreasing solution, the material to be plated is used as an anode, and the SUS plate is used as a cathode at a voltage of 5 V It was electrolytically degreased for 30 seconds, washed with water, and then pretreated by pickling in 3% sulfuric acid for 15 seconds.
次に、３ｇ／Ｌのシアン化銀カリウムと９０ｇ／Ｌのシアン化カリウムとからなるＡｇストライクめっき液中において、前処理済の被めっき材を陰極とし、白金で被覆したチタン電極板を陽極として、スターラにより４００ｒｐｍで撹拌しながら、電流密度２．５Ａ／ｄｍ２で１０秒間電気めっき（Ａｇストライクめっき）を行った。 Next, in an Ag strike plating solution composed of 3 g / L of potassium potassium cyanide and 90 g / L of potassium cyanide, the pretreated material to be plated is used as a cathode, and a titanium electrode plate coated with platinum is used as an anode. Then, electroplating (Ag strike plating) was performed at a current density of 2.5 A / dm 2 for 10 seconds while stirring at 400 rpm.
次に、１４８ｇ／Ｌのシアン化銀カリウム（Ｋ［Ａｇ（ＣＮ）２］）と１４０ｇ／Ｌのシアン化カリウム（ＫＣＮ）と１８ｍｇ／Ｌのセレノシアン酸カリウム（ＫＳｅＣＮ）からなるＡｇめっき浴中において、Ａｇストライクめっき済の被めっき材を陰極とし、銀電極板を陽極として、スターラにより４００ｒｐｍで撹拌しながら、電流密度５Ａ／ｄｍ２、液温１８℃でＡｇ膜厚が５μｍになるまで電気めっき（Ａｇめっき）を行うことにより、Ａｇめっき皮膜を形成した。なお、使用したＡｇめっき浴中のＳｅ濃度は１０ｍｇ／Ｌ、Ａｇ濃度は８０ｇ／Ｌ、フリーＣＮ濃度は５６ｇ／Ｌ、Ａｇ／フリーＣＮ質量比は１．４４である。 Next, in an Ag plating bath composed of 148 g / L silver potassium cyanide (K [Ag (CN) 2 ]), 140 g / L potassium cyanide (KCN), and 18 mg / L potassium selenocyanate (KSeCN), Ag Electroplating until the Ag film thickness reaches 5 μm at a current density of 5 A / dm 2 and a liquid temperature of 18 ° C. while stirring at 400 rpm with a stirrer using a strike plated material as a cathode and a silver electrode plate as an anode (Ag By performing (plating), an Ag plating film was formed. The Se concentration in the used Ag plating bath is 10 mg / L, the Ag concentration is 80 g / L, the free CN concentration is 56 g / L, and the Ag / free CN mass ratio is 1.44.
次に、１０ｇ／ＬのＡｕと０．２ｇ／ＬのＣｏを含むシアンＡｕめっき浴中において、Ａｇめっき済の被めっき材を陰極とし、白金で被覆したチタン電極板を陽極として、スターラにより４００ｒｐｍで攪拌しながら、電流密度５Ａ／ｄｍ２、液温５０℃でＡｕ膜厚が０．２μｍになるまで電気めっき（Ａｕめっき）を行うことにより、Ａｕめっき皮膜を形成した。 Next, in a cyan Au plating bath containing 10 g / L of Au and 0.2 g / L of Co, an Ag-plated material to be plated is used as a cathode, a titanium electrode plate coated with platinum is used as an anode, and a stirrer is used for 400 rpm. An Au plating film was formed by performing electroplating (Au plating) at a current density of 5 A / dm 2 and a liquid temperature of 50 ° C. until the Au film thickness reached 0.2 μm while stirring.
このようにして作製しためっき材について、Ａｇめっき皮膜の｛２００｝方位の面積分率を算出するとともに、めっき材を素材のＬＤ（圧延方向）を曲げ軸とする曲げ加工性（ＢａｄＷａｙ（ＢＷ）曲げ加工性）と、ＴＤ（圧延方向および板厚方向に垂直な方向）を曲げ軸とする曲げ加工性（ＧｏｏdＷａｙ（ＧＷ）曲げ加工性）を評価した。 About the plating material produced in this way, while calculating the area fraction of the {200} direction of the Ag plating film, bending workability (BadWay (BW)) where the plating material is the LD (rolling direction) of the material is the bending axis. Bending workability) and bending workability (Good Way (GW) bending workability) with TD (direction perpendicular to the rolling direction and the plate thickness direction) as the bending axis were evaluated.
Ａｇめっき皮膜の｛２００｝方位の面積分率は、サーマル電界放出形走査電子顕微鏡（日本電子株式会社製のＪＳＭ−７８００Ｆ）により、０．４μｍステップでＡｇめっき皮膜の表面の１００μｍ四方を測定し、走査電子顕微鏡用結晶解析ツール（株式会社ＴＳＬソリューションズ製のＯＩＭ）を用いて、電子線後方散乱回折法（ＥＢＳＤ法）により、Ａｇめっき皮膜の表面に垂直な方向（ＮＤ）に｛２００｝方位を（角度許容差１０°まで）向けている結晶が占める割合を算出することによって求めた。その結果、Ａｇめっき皮膜の｛２００｝方位の面積分率は５５．０％であった。無配向のＡｇめっき皮膜（Ａｇめっき皮膜を構成する結晶がランダムに配向している仮想のＡｇめっき皮膜）の｛２００｝方位の面積分率の理論値は４．４％程度であり、この無配向のＡｇめっき皮膜と比較すると、本実施例のめっき材では、Ａｇめっき皮膜中の結晶の多くが、｛２００｝面をＡｇめっき皮膜の表面の方向に向ける（Ａｇめっき皮膜の表面に垂直な方向（ＮＤ）に｛２００｝方位を向ける）ように強く配向している。 The area fraction of the {200} orientation of the Ag plating film was measured with a thermal field emission scanning electron microscope (JSM-7800F manufactured by JEOL Ltd.) in 100 μm squares on the surface of the Ag plating film in 0.4 μm steps. , {200} orientation in the direction perpendicular to the surface of the Ag plating film (ND) by electron beam backscatter diffraction (EBSD method) using a crystal analysis tool for scanning electron microscope (OIM manufactured by TSL Solutions Inc.) Was calculated by calculating the ratio of the crystal to which the angle was directed (to an angle tolerance of 10 °). As a result, the area fraction of {200} orientation of the Ag plating film was 55.0%. The theoretical value of the area fraction of the {200} orientation of the non-oriented Ag plating film (virtual Ag plating film in which the crystals constituting the Ag plating film are randomly oriented) is about 4.4%. Compared with the oriented Ag plating film, in the plating material of this example, many of the crystals in the Ag plating film have the {200} plane oriented in the direction of the surface of the Ag plating film (perpendicular to the surface of the Ag plating film). The orientation is so strong that the {200} direction is directed in the direction (ND).
めっき材の曲げ加工性は、ＪＩＳ Ｚ２２４８のＶブロック法に準じて、ＢＷ曲げ加工性については、めっき材を素材のＬＤ（圧延方向）を曲げ軸として、ＧＷ曲げ加工性については、めっき材を素材のＴＤ（圧延方向および板厚方向に垂直な方向）を曲げ軸として、それぞれＲ＝０．３およびＲ＝０．５で９０度に折り曲げた後、その折り曲げた箇所を顕微鏡（キーエンス社製のデジタルマイクロスコープＶＨＸ−１０００）により１０００倍に拡大して観察し、素材の露出の有無によって評価した。その結果、いずれの場合も、素材の露出は観察されず、曲げ加工性が良好であった。 The bending workability of the plating material conforms to the V block method of JIS Z2248. Regarding the BW bending workability, the plating material is the LD (rolling direction) as the bending axis, and the GW bending workability is the plating material. Bending the material TD (direction perpendicular to the rolling direction and the plate thickness direction) as the bending axis at 90 degrees with R = 0.3 and R = 0.5, respectively, and then bending the bent portion with a microscope (manufactured by Keyence Corporation) The digital microscope VHX-1000) was observed at a magnification of 1000 times, and was evaluated based on whether or not the material was exposed. As a result, in any case, the exposure of the material was not observed, and the bending workability was good.
［比較例１］
Ａｇめっきにおいて、１４８ｇ／Ｌのシアン化銀カリウムと１４０ｇ／Ｌのシアン化カリウムと７３ｍｇ／Ｌのセレノシアン酸カリウムとからなるＡｇめっき浴を使用した以外は、実施例１と同様の方法によりめっき材を作製した。なお、使用したＡｇめっき浴中のＳｅ濃度４０ｍｇ／Ｌ、Ａｇ濃度は８０ｇ／Ｌ、フリーＣＮ濃度は５６ｇ／Ｌ、Ａｇ／フリーＣＮ質量比は１．４４である。
[Comparative Example 1]
In Ag plating, a plating material was prepared in the same manner as in Example 1 except that an Ag plating bath composed of 148 g / L potassium potassium cyanide, 140 g / L potassium cyanide and 73 mg / L potassium selenocyanate was used. did. In the Ag plating bath used, the Se concentration is 40 mg / L, the Ag concentration is 80 g / L, the free CN concentration is 56 g / L, and the Ag / free CN mass ratio is 1.44.
このようにして作製しためっき材について、実施例１と同様の方法により、Ａｇめっき皮膜の｛２００｝方位の面積分率を算出し、ＢＷ曲げ加工性とＧＷ曲げ加工性を評価した。その結果、Ａｇめっき皮膜の｛２００｝方位の面積分率は４．８％であり、ＢＷ曲げ加工性とＧＷ曲げ加工性の評価のいずれの場合でも、素材の露出が観察され、曲げ加工性が良好でなかった。 About the plating material produced in this way, the area fraction of {200} orientation of the Ag plating film was calculated by the same method as in Example 1, and BW bending workability and GW bending workability were evaluated. As a result, the area fraction of the {200} orientation of the Ag plating film is 4.8%, and in both cases of evaluation of BW bending workability and GW bending workability, exposure of the material is observed and bending workability is observed. Was not good.
Claims (4)
Characterized by using a plating material according to any of claims 1 to 3 as a material, contact or terminal parts.
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