JP6665387B2 - Silver plated member and method of manufacturing the same - Google Patents
Silver plated member and method of manufacturing the same Download PDFInfo
- Publication number
- JP6665387B2 JP6665387B2 JP2015553351A JP2015553351A JP6665387B2 JP 6665387 B2 JP6665387 B2 JP 6665387B2 JP 2015553351 A JP2015553351 A JP 2015553351A JP 2015553351 A JP2015553351 A JP 2015553351A JP 6665387 B2 JP6665387 B2 JP 6665387B2
- Authority
- JP
- Japan
- Prior art keywords
- silver
- plating
- plating layer
- layer
- strike
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910052709 silver Inorganic materials 0.000 title claims description 130
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims description 129
- 239000004332 silver Substances 0.000 title claims description 129
- 238000004519 manufacturing process Methods 0.000 title claims description 26
- 238000007747 plating Methods 0.000 claims description 331
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 98
- 229910052718 tin Inorganic materials 0.000 claims description 98
- 229910052751 metal Inorganic materials 0.000 claims description 65
- 239000002184 metal Substances 0.000 claims description 65
- 238000011282 treatment Methods 0.000 claims description 64
- 238000006243 chemical reaction Methods 0.000 claims description 40
- 239000000758 substrate Substances 0.000 claims description 39
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 38
- 239000010949 copper Substances 0.000 claims description 29
- 229910052802 copper Inorganic materials 0.000 claims description 25
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 23
- 229910052759 nickel Inorganic materials 0.000 claims description 19
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 14
- 229910052737 gold Inorganic materials 0.000 claims description 14
- 239000010931 gold Substances 0.000 claims description 14
- 239000011135 tin Substances 0.000 description 109
- 239000000463 material Substances 0.000 description 52
- 238000000034 method Methods 0.000 description 52
- 206010040844 Skin exfoliation Diseases 0.000 description 28
- 239000002585 base Substances 0.000 description 20
- 150000003839 salts Chemical class 0.000 description 17
- 239000010405 anode material Substances 0.000 description 15
- 239000000654 additive Substances 0.000 description 13
- 238000004140 cleaning Methods 0.000 description 13
- 239000000243 solution Substances 0.000 description 13
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 12
- 230000000694 effects Effects 0.000 description 12
- 238000011156 evaluation Methods 0.000 description 12
- -1 ferrous metals Chemical class 0.000 description 11
- 230000001771 impaired effect Effects 0.000 description 10
- 239000002253 acid Substances 0.000 description 9
- 229910000765 intermetallic Inorganic materials 0.000 description 9
- UUWCBFKLGFQDME-UHFFFAOYSA-N platinum titanium Chemical compound [Ti].[Pt] UUWCBFKLGFQDME-UHFFFAOYSA-N 0.000 description 9
- GGCZERPQGJTIQP-UHFFFAOYSA-N sodium;9,10-dioxoanthracene-2-sulfonic acid Chemical compound [Na+].C1=CC=C2C(=O)C3=CC(S(=O)(=O)O)=CC=C3C(=O)C2=C1 GGCZERPQGJTIQP-UHFFFAOYSA-N 0.000 description 9
- 230000000996 additive effect Effects 0.000 description 8
- 239000003513 alkali Substances 0.000 description 8
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 8
- NNFCIKHAZHQZJG-UHFFFAOYSA-N potassium cyanide Chemical compound [K+].N#[C-] NNFCIKHAZHQZJG-UHFFFAOYSA-N 0.000 description 8
- 229910000881 Cu alloy Inorganic materials 0.000 description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 6
- 150000001879 copper Chemical class 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- NLKNQRATVPKPDG-UHFFFAOYSA-M potassium iodide Chemical compound [K+].[I-] NLKNQRATVPKPDG-UHFFFAOYSA-M 0.000 description 6
- 239000010935 stainless steel Substances 0.000 description 6
- 229910001220 stainless steel Inorganic materials 0.000 description 6
- 230000002378 acidificating effect Effects 0.000 description 5
- 239000012298 atmosphere Substances 0.000 description 5
- 239000010406 cathode material Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 5
- 229910000457 iridium oxide Inorganic materials 0.000 description 5
- 150000002825 nitriles Chemical class 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- LFAGQMCIGQNPJG-UHFFFAOYSA-N silver cyanide Chemical compound [Ag+].N#[C-] LFAGQMCIGQNPJG-UHFFFAOYSA-N 0.000 description 5
- 229940098221 silver cyanide Drugs 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 4
- 229910052787 antimony Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- KXZJHVJKXJLBKO-UHFFFAOYSA-N chembl1408157 Chemical compound N=1C2=CC=CC=C2C(C(=O)O)=CC=1C1=CC=C(O)C=C1 KXZJHVJKXJLBKO-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000007654 immersion Methods 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 229910000027 potassium carbonate Inorganic materials 0.000 description 4
- NDVLTYZPCACLMA-UHFFFAOYSA-N silver oxide Chemical compound [O-2].[Ag+].[Ag+] NDVLTYZPCACLMA-UHFFFAOYSA-N 0.000 description 4
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- JAJIPIAHCFBEPI-UHFFFAOYSA-N 9,10-dioxoanthracene-1-sulfonic acid Chemical compound O=C1C2=CC=CC=C2C(=O)C2=C1C=CC=C2S(=O)(=O)O JAJIPIAHCFBEPI-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000002738 chelating agent Substances 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 238000005238 degreasing Methods 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- 150000002815 nickel Chemical class 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 239000006174 pH buffer Substances 0.000 description 3
- 239000011669 selenium Substances 0.000 description 3
- RYCLIXPGLDDLTM-UHFFFAOYSA-J tetrapotassium;phosphonato phosphate Chemical compound [K+].[K+].[K+].[K+].[O-]P([O-])(=O)OP([O-])([O-])=O RYCLIXPGLDDLTM-UHFFFAOYSA-J 0.000 description 3
- YXIWHUQXZSMYRE-UHFFFAOYSA-N 1,3-benzothiazole-2-thiol Chemical compound C1=CC=C2SC(S)=NC2=C1 YXIWHUQXZSMYRE-UHFFFAOYSA-N 0.000 description 2
- JKFYKCYQEWQPTM-UHFFFAOYSA-N 2-azaniumyl-2-(4-fluorophenyl)acetate Chemical compound OC(=O)C(N)C1=CC=C(F)C=C1 JKFYKCYQEWQPTM-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 2
- 229920000298 Cellophane Polymers 0.000 description 2
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical class S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 2
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 2
- 229910000640 Fe alloy Inorganic materials 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- 229910021607 Silver chloride Inorganic materials 0.000 description 2
- 229910021612 Silver iodide Inorganic materials 0.000 description 2
- 229910001128 Sn alloy Inorganic materials 0.000 description 2
- 229910001069 Ti alloy Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- SRSXLGNVWSONIS-UHFFFAOYSA-N benzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1 SRSXLGNVWSONIS-UHFFFAOYSA-N 0.000 description 2
- 229940092714 benzenesulfonic acid Drugs 0.000 description 2
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 2
- 239000004327 boric acid Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- DOBRDRYODQBAMW-UHFFFAOYSA-N copper(i) cyanide Chemical compound [Cu+].N#[C-] DOBRDRYODQBAMW-UHFFFAOYSA-N 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- HKSGQTYSSZOJOA-UHFFFAOYSA-N potassium argentocyanide Chemical compound [K+].[Ag+].N#[C-].N#[C-] HKSGQTYSSZOJOA-UHFFFAOYSA-N 0.000 description 2
- 239000001508 potassium citrate Substances 0.000 description 2
- 229960002635 potassium citrate Drugs 0.000 description 2
- QEEAPRPFLLJWCF-UHFFFAOYSA-K potassium citrate (anhydrous) Chemical compound [K+].[K+].[K+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O QEEAPRPFLLJWCF-UHFFFAOYSA-K 0.000 description 2
- 235000011082 potassium citrates Nutrition 0.000 description 2
- XTFKWYDMKGAZKK-UHFFFAOYSA-N potassium;gold(1+);dicyanide Chemical compound [K+].[Au+].N#[C-].N#[C-] XTFKWYDMKGAZKK-UHFFFAOYSA-N 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 229940091258 selenium supplement Drugs 0.000 description 2
- 229940045105 silver iodide Drugs 0.000 description 2
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 description 2
- 229910001961 silver nitrate Inorganic materials 0.000 description 2
- 229910001923 silver oxide Inorganic materials 0.000 description 2
- YPNVIBVEFVRZPJ-UHFFFAOYSA-L silver sulfate Chemical compound [Ag+].[Ag+].[O-]S([O-])(=O)=O YPNVIBVEFVRZPJ-UHFFFAOYSA-L 0.000 description 2
- 229910000367 silver sulfate Inorganic materials 0.000 description 2
- 229910000029 sodium carbonate Inorganic materials 0.000 description 2
- AKHNMLFCWUSKQB-UHFFFAOYSA-L sodium thiosulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=S AKHNMLFCWUSKQB-UHFFFAOYSA-L 0.000 description 2
- 235000019345 sodium thiosulphate Nutrition 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 2
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- LWIHDJKSTIGBAC-UHFFFAOYSA-K tripotassium phosphate Chemical compound [K+].[K+].[K+].[O-]P([O-])([O-])=O LWIHDJKSTIGBAC-UHFFFAOYSA-K 0.000 description 2
- GOLORTLGFDVFDW-UHFFFAOYSA-N 3-(1h-benzimidazol-2-yl)-7-(diethylamino)chromen-2-one Chemical compound C1=CC=C2NC(C3=CC4=CC=C(C=C4OC3=O)N(CC)CC)=NC2=C1 GOLORTLGFDVFDW-UHFFFAOYSA-N 0.000 description 1
- HGINCPLSRVDWNT-UHFFFAOYSA-N Acrolein Chemical compound C=CC=O HGINCPLSRVDWNT-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910017482 Cu 6 Sn 5 Inorganic materials 0.000 description 1
- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- RGHNJXZEOKUKBD-SQOUGZDYSA-N Gluconic acid Natural products OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 239000004115 Sodium Silicate Substances 0.000 description 1
- DBMJMQXJHONAFJ-UHFFFAOYSA-M Sodium laurylsulphate Chemical compound [Na+].CCCCCCCCCCCCOS([O-])(=O)=O DBMJMQXJHONAFJ-UHFFFAOYSA-M 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- OBITVHZFHDIQGH-UHFFFAOYSA-N [Au].[K]C#N Chemical compound [Au].[K]C#N OBITVHZFHDIQGH-UHFFFAOYSA-N 0.000 description 1
- AYPZCTCULRIASE-ZVGUSBNCSA-L [Pb+2].C([C@H](O)[C@@H](O)C(=O)[O-])(=O)[O-] Chemical compound [Pb+2].C([C@H](O)[C@@H](O)C(=O)[O-])(=O)[O-] AYPZCTCULRIASE-ZVGUSBNCSA-L 0.000 description 1
- MQRWBMAEBQOWAF-UHFFFAOYSA-N acetic acid;nickel Chemical compound [Ni].CC(O)=O.CC(O)=O MQRWBMAEBQOWAF-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910000361 cobalt sulfate Inorganic materials 0.000 description 1
- 229940044175 cobalt sulfate Drugs 0.000 description 1
- KTVIXTQDYHMGHF-UHFFFAOYSA-L cobalt(2+) sulfate Chemical compound [Co+2].[O-]S([O-])(=O)=O KTVIXTQDYHMGHF-UHFFFAOYSA-L 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- ZQLBQWDYEGOYSW-UHFFFAOYSA-L copper;disulfamate Chemical compound [Cu+2].NS([O-])(=O)=O.NS([O-])(=O)=O ZQLBQWDYEGOYSW-UHFFFAOYSA-L 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 1
- XPPKVPWEQAFLFU-UHFFFAOYSA-N diphosphoric acid Chemical compound OP(O)(=O)OP(O)(O)=O XPPKVPWEQAFLFU-UHFFFAOYSA-N 0.000 description 1
- QLBHNVFOQLIYTH-UHFFFAOYSA-L dipotassium;2-[2-[bis(carboxymethyl)amino]ethyl-(carboxylatomethyl)amino]acetate Chemical compound [K+].[K+].OC(=O)CN(CC([O-])=O)CCN(CC(O)=O)CC([O-])=O QLBHNVFOQLIYTH-UHFFFAOYSA-L 0.000 description 1
- IOUCSUBTZWXKTA-UHFFFAOYSA-N dipotassium;dioxido(oxo)tin Chemical compound [K+].[K+].[O-][Sn]([O-])=O IOUCSUBTZWXKTA-UHFFFAOYSA-N 0.000 description 1
- FGRVOLIFQGXPCT-UHFFFAOYSA-L dipotassium;dioxido-oxo-sulfanylidene-$l^{6}-sulfane Chemical compound [K+].[K+].[O-]S([O-])(=O)=S FGRVOLIFQGXPCT-UHFFFAOYSA-L 0.000 description 1
- RNGFNLJMTFPHBS-UHFFFAOYSA-L dipotassium;selenite Chemical compound [K+].[K+].[O-][Se]([O-])=O RNGFNLJMTFPHBS-UHFFFAOYSA-L 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- BVTBRVFYZUCAKH-UHFFFAOYSA-L disodium selenite Chemical compound [Na+].[Na+].[O-][Se]([O-])=O BVTBRVFYZUCAKH-UHFFFAOYSA-L 0.000 description 1
- TVQLLNFANZSCGY-UHFFFAOYSA-N disodium;dioxido(oxo)tin Chemical compound [Na+].[Na+].[O-][Sn]([O-])=O TVQLLNFANZSCGY-UHFFFAOYSA-N 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 239000000174 gluconic acid Substances 0.000 description 1
- 235000012208 gluconic acid Nutrition 0.000 description 1
- IZLAVFWQHMDDGK-UHFFFAOYSA-N gold(1+);cyanide Chemical compound [Au+].N#[C-] IZLAVFWQHMDDGK-UHFFFAOYSA-N 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 229940046892 lead acetate Drugs 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- LNOPIUAQISRISI-UHFFFAOYSA-N n'-hydroxy-2-propan-2-ylsulfonylethanimidamide Chemical compound CC(C)S(=O)(=O)CC(N)=NO LNOPIUAQISRISI-UHFFFAOYSA-N 0.000 description 1
- 229940078494 nickel acetate Drugs 0.000 description 1
- LAIZPRYFQUWUBN-UHFFFAOYSA-L nickel chloride hexahydrate Chemical compound O.O.O.O.O.O.[Cl-].[Cl-].[Ni+2] LAIZPRYFQUWUBN-UHFFFAOYSA-L 0.000 description 1
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 1
- 229940053662 nickel sulfate Drugs 0.000 description 1
- RRIWRJBSCGCBID-UHFFFAOYSA-L nickel sulfate hexahydrate Chemical compound O.O.O.O.O.O.[Ni+2].[O-]S([O-])(=O)=O RRIWRJBSCGCBID-UHFFFAOYSA-L 0.000 description 1
- 229940116202 nickel sulfate hexahydrate Drugs 0.000 description 1
- KERTUBUCQCSNJU-UHFFFAOYSA-L nickel(2+);disulfamate Chemical compound [Ni+2].NS([O-])(=O)=O.NS([O-])(=O)=O KERTUBUCQCSNJU-UHFFFAOYSA-L 0.000 description 1
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 239000006259 organic additive Substances 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000003002 pH adjusting agent Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920000137 polyphosphoric acid Polymers 0.000 description 1
- 239000001103 potassium chloride Substances 0.000 description 1
- 235000011164 potassium chloride Nutrition 0.000 description 1
- 235000007715 potassium iodide Nutrition 0.000 description 1
- 229910000160 potassium phosphate Inorganic materials 0.000 description 1
- 229940093916 potassium phosphate Drugs 0.000 description 1
- 235000011009 potassium phosphates Nutrition 0.000 description 1
- 229940098424 potassium pyrophosphate Drugs 0.000 description 1
- LJCNRYVRMXRIQR-OLXYHTOASA-L potassium sodium L-tartrate Chemical compound [Na+].[K+].[O-]C(=O)[C@H](O)[C@@H](O)C([O-])=O LJCNRYVRMXRIQR-OLXYHTOASA-L 0.000 description 1
- ZNNZYHKDIALBAK-UHFFFAOYSA-M potassium thiocyanate Chemical compound [K+].[S-]C#N ZNNZYHKDIALBAK-UHFFFAOYSA-M 0.000 description 1
- 229940116357 potassium thiocyanate Drugs 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 229940005657 pyrophosphoric acid Drugs 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- CVHZOJJKTDOEJC-UHFFFAOYSA-N saccharin Chemical compound C1=CC=C2C(=O)NS(=O)(=O)C2=C1 CVHZOJJKTDOEJC-UHFFFAOYSA-N 0.000 description 1
- 229940081974 saccharin Drugs 0.000 description 1
- 235000019204 saccharin Nutrition 0.000 description 1
- 239000000901 saccharin and its Na,K and Ca salt Substances 0.000 description 1
- 229940065287 selenium compound Drugs 0.000 description 1
- 150000003343 selenium compounds Chemical class 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 235000019333 sodium laurylsulphate Nutrition 0.000 description 1
- 235000019795 sodium metasilicate Nutrition 0.000 description 1
- 235000011006 sodium potassium tartrate Nutrition 0.000 description 1
- 239000011781 sodium selenite Substances 0.000 description 1
- 229960001471 sodium selenite Drugs 0.000 description 1
- 235000015921 sodium selenite Nutrition 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 229910052911 sodium silicate Inorganic materials 0.000 description 1
- 229940079864 sodium stannate Drugs 0.000 description 1
- ZWZLRIBPAZENFK-UHFFFAOYSA-J sodium;gold(3+);disulfite Chemical compound [Na+].[Au+3].[O-]S([O-])=O.[O-]S([O-])=O ZWZLRIBPAZENFK-UHFFFAOYSA-J 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- WWNBZGLDODTKEM-UHFFFAOYSA-N sulfanylidenenickel Chemical compound [Ni]=S WWNBZGLDODTKEM-UHFFFAOYSA-N 0.000 description 1
- BUUPQKDIAURBJP-UHFFFAOYSA-N sulfinic acid Chemical compound OS=O BUUPQKDIAURBJP-UHFFFAOYSA-N 0.000 description 1
- 229940124530 sulfonamide Drugs 0.000 description 1
- 150000003456 sulfonamides Chemical class 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 150000003464 sulfur compounds Chemical class 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- POWFTOSLLWLEBN-UHFFFAOYSA-N tetrasodium;silicate Chemical compound [Na+].[Na+].[Na+].[Na+].[O-][Si]([O-])([O-])[O-] POWFTOSLLWLEBN-UHFFFAOYSA-N 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 229940001496 tribasic sodium phosphate Drugs 0.000 description 1
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 description 1
- UCGZDNYYMDPSRK-UHFFFAOYSA-L trisodium;gold;hydroxy-oxido-oxo-sulfanylidene-$l^{6}-sulfane Chemical compound [Na+].[Na+].[Na+].[Au].OS([S-])(=O)=O.OS([S-])(=O)=O UCGZDNYYMDPSRK-UHFFFAOYSA-L 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/10—Electroplating with more than one layer of the same or of different metals
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/10—Electroplating with more than one layer of the same or of different metals
- C25D5/12—Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/48—After-treatment of electroplated surfaces
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/48—After-treatment of electroplated surfaces
- C25D5/50—After-treatment of electroplated surfaces by heat-treatment
- C25D5/505—After-treatment of electroplated surfaces by heat-treatment of electroplated tin coatings, e.g. by melting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
- H01R13/02—Contact members
- H01R13/03—Contact members characterised by the material, e.g. plating, or coating materials
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/12—Electroplating: Baths therefor from solutions of nickel or cobalt
- C25D3/14—Electroplating: Baths therefor from solutions of nickel or cobalt from baths containing acetylenic or heterocyclic compounds
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
- C25D3/40—Electroplating: Baths therefor from solutions of copper from cyanide baths, e.g. with Cu+
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/46—Electroplating: Baths therefor from solutions of silver
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/48—Electroplating: Baths therefor from solutions of gold
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electroplating Methods And Accessories (AREA)
- Manufacturing Of Electrical Connectors (AREA)
Description
本発明は銀めっき部材の製造方法及びその製造方法により得られる銀めっき部材に関し、より具体的には、優れた耐摩耗性、電導性、摺動性及び低摩擦性を有し、かつ、銀めっき層の脆化を抑制するのに好適な銀めっき部材及びその製造方法に関する。 The present invention relates to a method for producing a silver-plated member and a silver-plated member obtained by the method, and more specifically, has excellent wear resistance, electrical conductivity, slidability and low friction, and The present invention relates to a silver-plated member suitable for suppressing embrittlement of a plating layer and a method for manufacturing the same.
銀めっきは電導性、低接触抵抗性及び耐熱性等に優れた特性を有し、各種接点、端子、コネクタ、スイッチ等の電気・電子部品に広く利用されている(例えば、特許文献1(特開2001−3194号公報)参照)。
Silver plating has excellent properties such as electrical conductivity, low contact resistance, and heat resistance, and is widely used for electric and electronic components such as various contacts, terminals, connectors, and switches (for example, see
近年、電気自動車やプラグインハイブリッド車等の普及が進んでおり、それに伴って家庭用充電装置及び急速充電装置等の充電装置の普及も進んでいる。自動車と充電装置とを連結する充電コネクタの端子は、高電圧及び高電流下での使用に加え、数万回にも及ぶ抜き差し動作に耐えなければならない。 In recent years, electric vehicles, plug-in hybrid vehicles, and the like have been widely used, and accordingly, charging devices such as home charging devices and quick charging devices have also been widely used. The terminals of the charging connector that connects the vehicle and the charging device must withstand tens of thousands of insertion / removal operations in addition to use under high voltage and high current.
ここで、上述の電気・電子部品の端子には、銅基板の上に錫めっきやリフロー錫めっきを施した材料が用いられることが多く、当該材料の表面に良好な銀めっきを施すことができれば、端子に優れた耐摩耗性と電導性を付与することができると思われる。 Here, for the terminals of the above-mentioned electric / electronic parts, a material obtained by applying tin plating or reflow tin plating on a copper substrate is often used, and if a good silver plating can be applied to the surface of the material. It seems that the terminal can be provided with excellent wear resistance and electrical conductivity.
しかしながら、卑な金属である錫の上に貴な金属である銀をめっきすることは極めて困難であり、錫と銀との電位差により錫と銀との置換が発生し(互いに拡散し合い)、銀めっきの剥離等が生じてしまう。このような理由から、錫めっきの上に良好な銀めっきを積層させる技術は存在しないのが現状である。 However, it is extremely difficult to plate silver, which is a noble metal, on tin, which is a base metal, and substitution of tin and silver occurs due to the potential difference between tin and silver (diffusing with each other). Peeling of silver plating or the like occurs. For these reasons, at present, there is no technique for laminating good silver plating on tin plating.
この点、例えば特許文献2(特開平8−176883号公報)においては、銅または銅合金からなる母材表面の少なくとも一部にSnめっき層を設け、当該Snめっき層の上に、Cu、In、Ag、Zn、Sbのうち、1種または2種以上を多層めっきする工程を含むめっき材の製造方法が開示されている。 In this regard, for example, in Patent Document 2 (Japanese Patent Application Laid-Open No. 8-176883), an Sn plating layer is provided on at least a part of the surface of a base material made of copper or a copper alloy, and Cu, In is provided on the Sn plating layer. , Ag, Zn, and Sb are disclosed.
しかしながら、上記特許文献2に記載の製造方法はSn合金めっき材を製造することが目的であり、上述の工程で得られる多層めっきを非酸化性雰囲気中で加熱することにより、母材表面の少なくとも一部に、Sn80〜99%を含むSn合金めっき層(但し、めっき層中のCu、Zn、Sbの合計量は10%以下とする)を形成することを特徴とするものである。当該手法は加熱によって錫と銀とを合金化させるものであり、錫めっきと銀めっきとの乏しい密着性は深刻な問題とはならないが、部材の最表面に銀めっき層を形成させる技術ではない。
However, the production method described in
以上のような従来技術における問題点に鑑み、本発明の目的は、優れた耐摩耗性、電導性、摺動性及び低摩擦性を有し、かつ、銀めっき層の脆化を抑制するのに好適な銀めっき部材及びその製造方法を提供することにある。 In view of the above problems in the prior art, an object of the present invention is to have excellent wear resistance, electrical conductivity, slidability and low friction, and to suppress embrittlement of a silver plating layer. It is an object of the present invention to provide a silver-plated member and a method for manufacturing the same, which are suitable for the present invention.
本発明者は上記目的を達成すべく、銀めっき部材の製造方法について鋭意研究を重ねた結果、優れた耐摩耗性、電導性、摺動性及び低摩擦性を有し、かつ、銀めっき層の脆化を抑制するのに好適な銀めっき部材を得るためには、リフロー錫めっき層を有する金属基材において、リフロー錫めっき層及びリフロー錫めっき層と金属基材の界面に形成される反応層を完全に剥離した領域に銀めっき処理を施すことが極めて有効であることを見出し、本発明に到達した。 The present inventor has conducted intensive studies on a method of manufacturing a silver-plated member in order to achieve the above object, and as a result, has excellent wear resistance, electrical conductivity, slidability and low friction, and a silver-plated layer. In order to obtain a silver-plated member suitable for suppressing embrittlement of a metal substrate having a reflow tin plating layer, a reaction formed at the interface between the reflow tin plating layer and the reflow tin plating layer and the metal substrate. The present inventors have found that it is extremely effective to apply a silver plating treatment to a region where the layer has been completely peeled off, and have reached the present invention.
即ち、本発明は、
少なくとも一部にリフロー錫めっき層を有する金属基材であって、前記リフロー錫めっき層と前記金属基材との界面に反応層を有する金属基材から、前記リフロー錫めっき層及び前記反応層の少なくとも一部を完全に剥離させる第一工程と、
前記リフロー錫めっき層及び前記反応層を完全に剥離した領域の少なくとも一部に銀めっき処理を施す第二工程と、を含むこと、
を特徴とする銀めっき部材の製造方法を提供する。That is, the present invention
A metal substrate having a reflow tin plating layer at least in part, from a metal substrate having a reaction layer at an interface between the reflow tin plating layer and the metal substrate, the reflow tin plating layer and the reaction layer A first step of completely peeling off at least a part,
A second step of performing a silver plating process on at least a part of the region from which the reflow tin plating layer and the reaction layer have been completely peeled off,
And a method for producing a silver-plated member.
本発明の銀めっき部材の製造方法においては、前記第二工程の予備処理として、前記リフロー錫めっき層及び前記反応層を完全に剥離させた領域の少なくとも一部に、銀ストライクめっき、銅ストライクめっき、金ストライクめっき、ニッケルストライクめっきの群から選ばれる1または2以上のストライクめっきを施すこと、が好ましい。また、銀めっきとの反応により生成する金属間化合物の予期せぬ悪影響を避けるために、ストライクめっきは銀ストライクめっきであることがより好ましい。 In the method for manufacturing a silver-plated member of the present invention, at least a part of the region where the reflow tin plating layer and the reaction layer are completely peeled off is subjected to silver strike plating and copper strike plating as a preliminary treatment of the second step. , One or more strike plating selected from the group consisting of gold strike plating and nickel strike plating. The strike plating is more preferably silver strike plating in order to avoid unexpected adverse effects of intermetallic compounds generated by the reaction with silver plating.
本発明の銀めっき部材の製造方法においては、前記第一工程の前に、少なくとも一部に錫めっき層を含む金属基材のうちの前記錫めっき層にリフロー処理を施し、前記錫めっき層をリフロー錫めっき層に変換させるとともに前記リフロー錫めっき層と前記金属基材との界面に反応層を形成する前工程を含んでいてもよい。 In the method for manufacturing a silver-plated member of the present invention, before the first step, a reflow treatment is performed on the tin-plated layer of the metal base material including at least a part thereof, and the tin-plated layer is formed. The method may include a pre-process of forming a reaction layer at an interface between the reflow tin plating layer and the metal base material while converting the reflow tin plating layer into a reflow tin plating layer.
ここで、リフロー処理とは、電着した錫めっき層を加熱して一旦溶融し、急冷する処理である。錫めっき層を溶融することによって、めっき時の応力(歪み)を除去し、金属基材と錫めっき層との界面に反応層を形成させることで、錫めっき層の経時的な変化を低減することができる。 Here, the reflow treatment is a treatment in which the electrodeposited tin plating layer is heated, temporarily melted, and rapidly cooled. By melting the tin plating layer, stress (strain) during plating is removed, and a reaction layer is formed at the interface between the metal substrate and the tin plating layer, thereby reducing the change over time of the tin plating layer. be able to.
また、リフロー処理によって、錫めっき層と金属基材との界面に反応層が形成される。金属基材と各めっき層との間における原子拡散及び/又は反応の抑制に効果がある限りにおいて反応層の組成及び形状は特に限定されないが、反応層がCu3Snを含むことが好ましい。In addition, a reaction layer is formed at the interface between the tin plating layer and the metal substrate by the reflow treatment. The composition and shape of the reaction layer are not particularly limited as long as they are effective in suppressing atomic diffusion and / or reaction between the metal base material and each plating layer, but it is preferable that the reaction layer contains Cu 3 Sn.
上記リフロー処理の条件は、本発明の効果を損なわない範囲で従来公知の種々のリフロー処理を用いることができる。リフロー処理においては、金属基材表面の一部又は全体に施された錫めっき層を錫の融点以上に加熱して溶融させればよい。錫めっき層の内部応力を緩和するために、好ましい処理温度は250〜600℃であり、より好ましくは300〜500℃、更に好ましくは350〜450℃である。また、めっき外観をよくするために、好ましい処理時間は3〜40秒間であり、より好ましくは5〜30秒間、更に好ましくは5〜20秒間である。その他、加熱処理は還元雰囲気または不活性雰囲気下で行うことが好ましい。 As the conditions for the reflow treatment, various conventionally known reflow treatments can be used as long as the effects of the present invention are not impaired. In the reflow treatment, the tin plating layer applied to a part or the whole of the surface of the metal substrate may be melted by heating to a temperature equal to or higher than the melting point of tin. In order to alleviate the internal stress of the tin plating layer, a preferable treatment temperature is 250 to 600 ° C, more preferably 300 to 500 ° C, and further preferably 350 to 450 ° C. In order to improve the plating appearance, a preferable treatment time is 3 to 40 seconds, more preferably 5 to 30 seconds, and further preferably 5 to 20 seconds. In addition, the heat treatment is preferably performed in a reducing atmosphere or an inert atmosphere.
また、本発明の銀めっき部材の製造方法においては、上記第一工程において金属基材からリフロー錫めっき層及びリフロー錫めっき層と金属基材との界面に形成される反応層の少なくとも一部を完全に剥離させる。リフロー錫めっき層及び反応層を完全に剥離させる方法は、本発明の効果を損なわない範囲で従来公知の種々の剥離方法を用いることができるが、例えば、リフロー錫めっき層の剥離したい箇所を適当な剥離液によって浸漬剥離又は電解剥離等する方法を用いることができる。 In the method for producing a silver-plated member of the present invention, in the first step, at least a part of the reflow tin plating layer from the metal substrate and the reaction layer formed at the interface between the reflow tin plating layer and the metal substrate. Peel completely. As a method of completely peeling off the reflow tin plating layer and the reaction layer, various conventionally known peeling methods can be used as long as the effects of the present invention are not impaired. A method of immersion peeling or electrolytic peeling with a suitable peeling liquid can be used.
第一工程で用いる剥離液には、一般的な非鉄金属用の浸漬剥離液または電解剥離液を使用することができ、例えば、硫酸又は硝酸、若しくは水酸化ナトリウム等を水溶させたものに酸化剤を添加したものを用いて浸漬剥離や電解剥離等を行うことができる。なお、リフロー錫めっき層及び反応層を完全に剥離した領域の金属基材最表面は、金属基材そのものとなっている。 As the stripping solution used in the first step, a general immersion stripping solution or non-electrolytic stripping solution for non-ferrous metals can be used. Immersion peeling, electrolytic peeling, or the like can be performed by using a material to which chromium is added. Note that the outermost surface of the metal substrate in the region where the reflow tin plating layer and the reaction layer are completely peeled off is the metal substrate itself.
本発明の銀めっき部材の製造方法においては、上記第一工程で得られた剥離部の少なくとも一部に対してストライクめっき処理を施すことが好ましい。ここで、ストライクめっき処理によって形成されるストライクめっき層は、連続する膜形状であっても、本発明の効果を損なわない範囲で、粒状や島状の不連続な膜形状であってもよい。後者の場合、粒状及び島状部分が部分的に連続していてもよい。ストライクめっき層の厚さは0.01〜0.5μmであることが好ましい。なお、第二工程の銀めっき処理によって、極めて薄いストライクめっき層の上に銀めっき層が形成され、概略的には単一の銀めっき層が得られる。 In the method for manufacturing a silver-plated member according to the present invention, it is preferable to perform a strike plating process on at least a part of the peeled portion obtained in the first step. Here, the strike plating layer formed by the strike plating process may have a continuous film shape or a granular or island-like discontinuous film shape as long as the effects of the present invention are not impaired. In the latter case, the granular and island-shaped portions may be partially continuous. The strike plating layer preferably has a thickness of 0.01 to 0.5 μm. The silver plating process in the second step forms a silver plating layer on an extremely thin strike plating layer, and a single silver plating layer is obtained roughly.
また、本発明の銀めっき部材の製造方法においては、上記第二工程の銀めっき処理を経て得られる上記単一の銀めっき層の厚さが0.1μm〜50μmであること、が好ましい。なお、当該厚さはストライクめっき層と銀めっき層とを合わせた値である。 In the method for producing a silver-plated member of the present invention, it is preferable that the thickness of the single silver plating layer obtained through the silver plating in the second step is 0.1 μm to 50 μm. The thickness is a value obtained by combining the strike plating layer and the silver plating layer.
第二工程の銀めっき処理を経て得られる上記単一の銀めっき層は基本的に一定の厚さを有するが、本発明の効果を損なわない範囲で、部分的に薄くなっていたり厚くなっていたりしてもよい。また、上記銀めっき層のビッカース硬度が10HV〜250HVであることが好ましい。 The single silver plating layer obtained through the silver plating process in the second step basically has a constant thickness, but is partially thinned or thickened as long as the effect of the present invention is not impaired. Or you may. The silver plating layer preferably has a Vickers hardness of 10 HV to 250 HV.
また、本発明は、上記の銀めっき部材の製造方法により得られる銀めっき部材も提供するものであり、当該銀めっき部材は、
金属基材の表面に、リフロー錫めっき層が形成された領域と、銀めっき層が形成された領域と、をそれぞれ有するめっき材であって、
前記リフロー錫めっき層と前記金属基材の界面にはCu3Snを含む反応層が存在し、
前記銀めっき層と前記金属基材の界面にはCu3Snを含む反応層が存在しないこと、
を特徴とする。Further, the present invention also provides a silver-plated member obtained by the method for producing a silver-plated member, and the silver-plated member is
On the surface of the metal substrate, a region in which the reflow tin plating layer is formed, and a region in which the silver plating layer is formed, each having a plating material,
There is a reaction layer containing Cu 3 Sn at the interface between the reflow tin plating layer and the metal base,
No reaction layer containing Cu 3 Sn is present at the interface between the silver plating layer and the metal base,
It is characterized by.
本発明の銀めっき部材においては、銀めっき層は金属基材に対して冶金的に接合されている。 冶金的な接合とは、銀めっき層と金属基材とがアンカー効果等の機械的接合や接着剤等の異種接合層を介して接合されているのではなく、お互いの金属同士が直接接合されていることを意味する。冶金的な接合とは結晶学的整合(エピタキシー)による接合を当然に含む概念であり、本発明において、銀めっき層と金属基材とは、互いに結晶学的整合(エピタキシー)による接合が達成されていることが好ましい。 In the silver-plated member of the present invention, the silver-plated layer is metallurgically bonded to the metal substrate. Metallurgical bonding does not mean that the silver plating layer and the metal substrate are bonded together through mechanical bonding such as an anchor effect or a heterogeneous bonding layer such as an adhesive, but rather that the metals are directly bonded to each other. Means that. Metallurgical bonding is a concept that naturally includes bonding by crystallographic matching (epitaxy). In the present invention, the silver plating layer and the metal base material achieve bonding by crystallographic matching (epitaxy) to each other. Is preferred.
錫めっき層と銀めっき層とが接している場合、錫と銀との拡散及び反応に伴う金属間化合物(例えば、Ag3Sn)の形成により、錫めっき層及び/又は銀めっき層が脆化してしまう。これに対し、本発明の上記めっき材においては、銀めっき層は金属基材に直接形成されているため、錫めっき層及び/又は銀めっき層の脆化を極めて効果的に抑制することができる。When the tin plating layer and the silver plating layer are in contact with each other, the tin plating layer and / or the silver plating layer are embrittled by the formation of an intermetallic compound (eg, Ag 3 Sn) accompanying the diffusion and reaction of tin and silver. Would. On the other hand, in the plating material of the present invention, since the silver plating layer is formed directly on the metal base material, embrittlement of the tin plating layer and / or the silver plating layer can be extremely effectively suppressed. .
また、本発明は上記本発明の銀めっき部材を含む接続端子にも関し、当該接続端子は、雄端子及び/又は雌端子が上記の本発明の銀めっき部材で構成されている。 The present invention also relates to a connection terminal including the silver-plated member of the present invention, wherein the male and / or female terminals of the connection terminal are formed of the silver-plated member of the present invention.
上記の本発明の接続端子においては、耐摩耗性が要求される嵌合部の最表面を錫めっき層とし、電導性が要求される接点部の最表面を銀めっき層とすること、が好ましい。 In the connection terminal of the present invention described above, it is preferable that the outermost surface of the fitting portion requiring abrasion resistance be a tin plating layer, and the outermost surface of the contact portion requiring electrical conductivity be a silver plating layer. .
本発明の銀めっき部材の製造方法によれば、優れた耐摩耗性、電導性、摺動性及び低摩擦性を有し、かつ、銀めっき層の脆化を抑制するのに好適な銀めっき部材及びその製造方法を提供することができる。また、本発明の銀めっき部材は、優れた耐摩耗特性と電導性とを必要とする接続端子用の材料として好適に用いることができ、優れた耐摩耗性と電導性、及び嵌合性を兼ね備えた接続端子を提供することができる。 According to the method for producing a silver-plated member of the present invention, silver plating having excellent wear resistance, electrical conductivity, slidability and low friction, and suitable for suppressing embrittlement of a silver-plated layer is provided. A member and a method for manufacturing the member can be provided. Further, the silver-plated member of the present invention can be suitably used as a material for a connection terminal requiring excellent wear resistance and electrical conductivity, and has excellent wear resistance, electrical conductivity, and fitting property. A combined connection terminal can be provided.
以下、図面を参照しながら本発明の銀めっき部材の製造方法、銀めっき部材、及び接続端子の代表的な実施形態について詳細に説明するが、本発明はこれらのみに限定されるものではない。なお、以下の説明では、同一または相当部分には同一符号を付し、重複する説明は省略する場合がある。また、図面は、本発明を概念的に説明するためのものであるから、表された各構成要素の寸法やそれらの比は実際のものとは異なる場合もある。 Hereinafter, typical embodiments of the method for manufacturing a silver-plated member, silver-plated members, and connection terminals of the present invention will be described in detail with reference to the drawings, but the present invention is not limited thereto. In the following description, the same or corresponding parts are denoted by the same reference characters, and redundant description may be omitted. Further, since the drawings are for conceptually explaining the present invention, the dimensions of the components and their ratios may be different from the actual ones.
≪めっき材の製造方法≫
図1は、本発明の銀めっき部材の製造方法の工程図である。本発明の銀めっき部材の製造方法は、金属基材と、リフロー錫めっき層と、銀めっき層と、を有するめっき材の製造方法であって、金属基材からリフロー錫めっき層及び反応層の少なくとも一部を完全に剥離させる第一工程(S01)と、リフロー錫めっき層及び反応層を完全に剥離させた領域の少なくとも一部に銀ストライクめっき、銅ストライクめっき、金ストライクめっき、ニッケルストライクめっきの群から選ばれる1または2以上のストライクめっき処理を施すストライクめっき処理工程(S02’)と、ストライクめっき処理を施した領域の少なくとも一部に銀めっき処理を施す第二工程(S02)と、を含んでいる。なお、ストライクめっき処理工程(S02’)は任意の工程であり、第二工程(S02)によって形成させる銀めっき層と金属基材との密着性が良好な場合には省略することができる。また、錫めっき層にリフロー処理を施して、金属基材と錫めっき層との界面に反応層を形成させる前工程(S00)を含んでいてもよい。製造 Production method of plating material≪
FIG. 1 is a process chart of the method for producing a silver-plated member of the present invention. The method for producing a silver-plated member of the present invention is a method for producing a plating material having a metal substrate, a reflow tin plating layer, and a silver plating layer, wherein the reflow tin plating layer and the reaction layer are formed from the metal substrate. A first step (S01) of completely peeling off at least a part, and silver strike plating, copper strike plating, gold strike plating, and nickel strike plating on at least a part of a region where the reflow tin plating layer and the reaction layer are completely peeled. A strike plating step (S02 ') of performing one or more strike plating treatments selected from the group consisting of: a second step (S02) of subjecting at least a part of the region subjected to the strike plating treatment to a silver plating treatment; Contains. The strike plating step (S02 ') is an optional step, and can be omitted when the adhesion between the silver plating layer formed in the second step (S02) and the metal base material is good. Further, a pre-process (S00) of performing a reflow treatment on the tin plating layer to form a reaction layer at an interface between the metal base material and the tin plating layer may be included.
金属基材に用いる金属は、電導性を有している限り特に限定されず、例えば、アルミニウム及びアルミニウム合金、鉄及び鉄合金、チタン及びチタン合金、ステンレス、銅及び銅合金等を挙げることができるが、なかでも、電導性・熱伝導性・展延性に優れているという理由から、銅及び銅合金を用いることが好ましい。 The metal used for the metal substrate is not particularly limited as long as it has conductivity, and examples thereof include aluminum and aluminum alloys, iron and iron alloys, titanium and titanium alloys, stainless steel, copper and copper alloys, and the like. However, among them, it is preferable to use copper and a copper alloy because they are excellent in electrical conductivity, thermal conductivity, and spreadability.
金属基材の表面に錫めっき層を有するめっき材に対して前工程(S00)でリフロー処理を施し、当該リフロー処理の後に洗浄処理を行い、第一工程(S01)、ストライクめっき処理工程(S02’)、及び第二工程(S02)を経て銀めっき部材を得ることができる。以下、各処理について詳細に説明する。 A reflow process is performed on the plating material having a tin plating layer on the surface of the metal base material in the previous step (S00), and a cleaning process is performed after the reflow process. The first step (S01) includes a strike plating process (S02). ') And the second step (S02), a silver-plated member can be obtained. Hereinafter, each process will be described in detail.
(1)錫めっき処理
金属基材に錫めっきを施した材料、及び錫めっき層を有する金属基材にリフロー処理を施した材料については、市販のものを使用することができる。また、錫めっきには、本発明の効果を損なわない範囲で従来公知の種々の錫めっき手法を用いることができる。(1) Tin plating treatment Commercially available materials can be used for a material obtained by subjecting a metal substrate to tin plating and a material obtained by subjecting a metal substrate having a tin plating layer to a reflow treatment. For the tin plating, various conventionally known tin plating methods can be used as long as the effects of the present invention are not impaired.
錫めっき浴としては、酸性浴、中性浴、アルカリ性浴があり、いずれの浴も使用出来る。酸性浴としては硫酸浴や有機スルホン酸浴、中性浴はピロリン酸浴やグルコン酸浴、アルカリ性浴としてはスズ酸カリウム浴やスズ酸ナトリウム浴が一般的である。 Examples of the tin plating bath include an acidic bath, a neutral bath, and an alkaline bath, and any bath can be used. Generally, a sulfuric acid bath or an organic sulfonic acid bath is used as an acidic bath, a pyrophosphoric acid bath or a gluconic acid bath is used as a neutral bath, and a potassium stannate bath or a sodium stannate bath is used as an alkaline bath.
(2)リフロー処理(前工程(S00))
一般的には、錫めっきへのリフローは時間の経過に伴うウィスカー(針状金属結晶)の成長を抑制するための処理であり、電着した錫めっき層を加熱して一旦溶融し、急冷する方法が用いられている。錫めっき層を溶融することによって、めっき時の応力(歪み)を除去し、金属基材との反応層を形成することで経時的な変化を低減することができる。なお、本発明のめっき材の製造方法においては、錫めっき層と金属基材との界面に反応層を形成させることがリフロー処理の主たる目的である。上記のウィスカーは、銅と錫めっきの拡散により、それらの界面に発生する結晶格子の大きいCu6Sn5の生成が原因と言われているところ、リフロー処理はこのウィスカー生成抑制のために行われるものであり、緻密なCu3Snを形成してバリア層とすることにより、銅の拡散を抑え、ウィスカー発生を抑制している。(2) Reflow treatment (pre-process (S00))
Generally, reflow to tin plating is a process for suppressing the growth of whiskers (needle-shaped metal crystals) with the passage of time. The electrodeposited tin plating layer is heated, melted once, and rapidly cooled. A method is used. By melting the tin plating layer, stress (strain) at the time of plating is removed, and a change with time can be reduced by forming a reaction layer with the metal base material. In the method for producing a plated material of the present invention, the main purpose of the reflow treatment is to form a reaction layer at the interface between the tin plating layer and the metal substrate. The whisker is said to be caused by the formation of Cu 6 Sn 5 having a large crystal lattice generated at the interface between the whiskers due to the diffusion of copper and tin plating. The reflow treatment is performed to suppress the whisker formation. By forming dense Cu 3 Sn as a barrier layer, diffusion of copper is suppressed, and whisker generation is suppressed.
リフロー処理は、金属基材表面の一部又は全体に施された錫めっき層を錫の融点以上に加熱して溶融させればよい。錫めっき層の内部応力を緩和するために、好ましい処理温度は250〜600℃であり、より好ましくは300〜500℃、更に好ましくは350〜450℃である。また、めっき外観をよくするために、好ましい処理時間は3〜40秒間であり、より好ましくは5〜30秒間、更に好ましくは5〜20秒間である。その他、加熱処理は還元雰囲気または不活性雰囲気下で行うことが好ましい。なお、錫めっき層を有する金属基材にリフロー処理を施しためっき材を購入し、前工程(S00)を省略してもよい。 In the reflow treatment, the tin plating layer applied to a part or the whole of the surface of the metal substrate may be melted by heating to a temperature equal to or higher than the melting point of tin. In order to alleviate the internal stress of the tin plating layer, a preferable treatment temperature is 250 to 600 ° C, more preferably 300 to 500 ° C, and further preferably 350 to 450 ° C. In order to improve the plating appearance, a preferable treatment time is 3 to 40 seconds, more preferably 5 to 30 seconds, and further preferably 5 to 20 seconds. In addition, the heat treatment is preferably performed in a reducing atmosphere or an inert atmosphere. In addition, you may purchase the plating material which performed the reflow process on the metal base material which has a tin plating layer, and may omit a front process (S00).
(3)洗浄処理
洗浄工程は、任意の工程であり、図1には示していないが、リフロー錫めっき層を有する金属基材のうちの少なくともリフロー錫めっき層の表面を洗浄する工程である。ここでは、本発明の効果を損なわない範囲で従来公知の種々の洗浄処理液及び処理条件を用いることができる。(3) Cleaning Treatment The cleaning step is an optional step, and although not shown in FIG. 1, is a step of cleaning at least the surface of the reflow tin plating layer of the metal base material having the reflow tin plating layer. Here, various conventionally known cleaning treatment liquids and treatment conditions can be used as long as the effects of the present invention are not impaired.
洗浄処理液には一般的な非鉄金属用の浸漬脱脂溶液や電解脱脂溶液を使用することができるが、両性金属である錫の腐食を防止するため、pHが2超11未満の洗浄処理溶液を使用することが好ましく、pHが2以下の強酸浴やpHが11以上の強アルカリ浴の使用は避けることが好ましい。 A general immersion degreasing solution for non-ferrous metals or an electrolytic degreasing solution can be used as the cleaning solution. However, in order to prevent corrosion of tin, which is an amphoteric metal, a cleaning solution having a pH of more than 2 and less than 11 is used. It is preferable to use a strong acid bath having a pH of 2 or less or a strong alkaline bath having a pH of 11 or more.
具体的には、第三リン酸ナトリウム、炭酸ナトリウム、メタケイ酸ナトリウムまたはオルトケイ酸ナトリウム等10〜50g/Lを水溶した弱アルカリ性の浴に界面活性剤0.1〜10g/Lを加えた浴で浴温20〜70℃、10〜60秒間浸漬する。または陽極にステンレス鋼、チタン白金板、及び酸化イリジウム等の不溶性陽極を用いて、陰極電流密度2〜5A/dm2で陰極電解脱脂を行ってもよい。Specifically, a bath in which 0.1 to 10 g / L of a surfactant is added to a weakly alkaline bath in which 10 to 50 g / L of tribasic sodium phosphate, sodium carbonate, sodium metasilicate or sodium orthosilicate is dissolved. Soak at a bath temperature of 20-70 ° C for 10-60 seconds. Alternatively, cathodic electrolytic degreasing may be performed at a cathode current density of 2 to 5 A / dm 2 using an insoluble anode such as stainless steel, a titanium platinum plate, and iridium oxide as the anode.
(4)剥離処理(第一工程(S01))
剥離処理はめっき材の任意の領域からリフロー錫めっき層及び反応層を完全に剥離させるための処理である。剥離処理が不要な領域については、テープ、スパージャーマスク、レジスト、及びインクジェット印刷方式等の従来公知の種々の方法でマスキングを施し、最終的に銀めっき層を形成させたい領域のみに剥離処理を施すことができる。(4) Peeling treatment (first step (S01))
The stripping process is a process for completely stripping the reflow tin plating layer and the reaction layer from an arbitrary region of the plating material. For areas where peeling is not required, tape, sparger mask, resist, and masking are performed by various conventionally known methods such as an ink jet printing method, and peeling is performed only on the area where the silver plating layer is to be finally formed. Can be applied.
リフロー錫めっき層を剥離させる方法は、本発明の効果を損なわない範囲で従来公知の種々の剥離方法を用いることができるが、例えば、剥離したい箇所を適当な剥離液によって浸漬剥離又は電解剥離等する方法を用いることができる。 As the method of peeling the reflow tin plating layer, various conventionally known peeling methods can be used as long as the effect of the present invention is not impaired. For example, a part to be peeled is immersed or electrolytically peeled with an appropriate peeling liquid. Can be used.
第一工程で用いる剥離液には硫酸、硝酸、及び水酸化ナトリウムを水溶させたものに酸化剤を添加したものを例示することができる。また、硫酸水溶液を用いた場合、剥離後に硫酸のS(硫黄)が残存し、銀めっきと反応することで変色や変質等を生じる可能性があることから、硝酸水溶液を用いることがより好ましい。本工程においてリフロー錫めっき層と反応層を完全に剥離するため、当該剥離領域の最表面は金属基材そのものとなっている。 Examples of the stripping solution used in the first step include a solution obtained by adding an oxidizing agent to a solution obtained by dissolving sulfuric acid, nitric acid, and sodium hydroxide. When an aqueous solution of sulfuric acid is used, it is more preferable to use an aqueous solution of nitric acid because S (sulfur) of sulfuric acid remains after peeling and may react with silver plating to cause discoloration or deterioration. In this step, since the reflow tin plating layer and the reaction layer are completely peeled off, the outermost surface of the peeled area is the metal substrate itself.
なお、剥離処理後は酸洗浄することが好ましい。酸洗浄には、硫酸又は硝酸等の酸を3〜50%に希釈した一般的な酸洗浄液を用いることができる。 Note that it is preferable to perform acid cleaning after the release treatment. For acid cleaning, a general acid cleaning solution in which an acid such as sulfuric acid or nitric acid is diluted to 3 to 50% can be used.
(5)ストライクめっき処理工程(S02’)
ストライクめっき処理は、金属基材と銀めっき層との密着性を改善するために施される処理であり、リフロー錫めっき層及び反応層を完全に剥離させた領域の少なくとも一部に、銀ストライクめっき、銅ストライクめっき、金ストライクめっき、ニッケルストライクめっきの群から選ばれる1または2以上のストライクめっき処理を施すものである。(5) Strike plating process (S02 ')
The strike plating process is a process performed to improve the adhesion between the metal base material and the silver plating layer. At least a part of the region where the reflow tin plating layer and the reaction layer are completely peeled off has a silver strike. One or more strike plating processes selected from the group of plating, copper strike plating, gold strike plating, and nickel strike plating are performed.
(A)銀ストライクめっき
銀ストライクめっき浴としては、例えば、シアン化銀及びシアン化銀カリウム等の銀塩と、シアン化カリウム及び塩化カリウム等の電導塩と、を含むものを用いることができる。(A) Silver strike plating As the silver strike plating bath, for example, a bath containing a silver salt such as silver cyanide and silver potassium cyanide and a conductive salt such as potassium cyanide and potassium chloride can be used.
銀ストライクめっき処理には、本発明の効果を損なわない範囲で従来公知の種々の銀めっき手法を用いることができるが、通常の銀めっきと比較して、めっき浴中の銀塩の濃度を低く、電導塩の濃度を高くすることが好ましい。 In the silver strike plating treatment, various conventionally known silver plating techniques can be used as long as the effects of the present invention are not impaired, but the silver salt concentration in the plating bath is reduced as compared with ordinary silver plating. It is preferable to increase the concentration of the conductive salt.
銀ストライクめっき処理に好適に用いることができる銀ストライクめっき浴は、銀塩と、シアン化アルカリ塩と、電導塩と、により構成され、必要に応じて光沢剤が添加されていてもよい。各構成要素の好適な使用量は、銀塩:1〜10g/L、シアン化アルカリ塩:80〜200g/L、電導塩:0〜100g/L、光沢剤:〜1000ppmである。 The silver strike plating bath that can be suitably used in the silver strike plating treatment is composed of a silver salt, an alkali cyanide salt, and a conductive salt, and may contain a brightener as needed. The preferred amounts of the respective components are: silver salt: 1 to 10 g / L, alkali cyanide: 80 to 200 g / L, conductive salt: 0 to 100 g / L, and brightener: to 1000 ppm.
銀塩としては、例えば、シアン化銀、ヨウ化銀、酸化銀、硫酸銀、硝酸銀、塩化銀等が挙げられ、電導塩としては、例えば、シアン化カリウム、シアン化ナトリウム、ピロリン酸カリウム、ヨウ化カリウム、チオ硫酸ナトリウム等が挙げられる。 Examples of the silver salt include silver cyanide, silver iodide, silver oxide, silver sulfate, silver nitrate, and silver chloride.Examples of the conductive salt include potassium cyanide, sodium cyanide, potassium pyrophosphate, and potassium iodide. And sodium thiosulfate.
光沢剤としては金属光沢剤及び/又は有機光沢剤を用いることができる。また、金属光沢剤としては、アンチモン(Sb)、セレン(Se)、テルル(Te)等を例示でき、有機光沢剤としては、ベンゼンスルホン酸等の芳香族スルホン酸系化合物、メルカプタン類等を例示することができる。 As the brightener, a metallic brightener and / or an organic brightener can be used. Examples of the metallic brightener include antimony (Sb), selenium (Se), tellurium (Te), and the like, and examples of the organic brightener include aromatic sulfonic acid compounds such as benzenesulfonic acid and mercaptans. can do.
銀ストライクめっき浴の浴温度、陽極材料、電流密度等の銀ストライクめっき条件は、用いるめっき浴及び必要とするめっき厚さ等に応じて適宜設定することができる。例えば、陽極材料には、可溶性陽極や、ステンレス鋼、チタン白金板、及び酸化イリジウム等の不溶性陽極を用いることが好ましい。また、好適なめっき条件としては、浴温:15〜50℃、電流密度:0.5〜5A/dm2、処理時間:5〜60秒を例示することができる。Silver strike plating conditions such as bath temperature, anode material, and current density of the silver strike plating bath can be appropriately set depending on the plating bath to be used, the required plating thickness, and the like. For example, as the anode material, it is preferable to use a soluble anode or an insoluble anode such as stainless steel, a titanium platinum plate, and iridium oxide. Suitable plating conditions include a bath temperature of 15 to 50 ° C., a current density of 0.5 to 5 A / dm 2 , and a processing time of 5 to 60 seconds.
なお、銀ストライクめっきは金属基材の全面に施してもよく、第二工程(S02)において銀めっきを形成させたい領域のみに施してもよい。 The silver strike plating may be applied to the entire surface of the metal substrate, or may be applied only to a region where silver plating is to be formed in the second step (S02).
(B)銅ストライクめっき
銅ストライクめっき浴には、酸性浴とアルカリ性浴のどちらを用いてもよい。(B) Copper strike plating As the copper strike plating bath, either an acidic bath or an alkaline bath may be used.
酸性浴は銅塩及び酸により構成され、添加剤が添加されてもよい。銅塩には、例えば、硫酸銅及びスルファミン酸銅等を用いることができる。酸には、例えば、硫酸及びスルファミン酸等を用いることができる。添加剤には、例えば、硫黄化合物(チオ尿素、ジスルホン塩、メルカプトベンゾチアゾール等)、有機化合物(ポリオキシエチレングリコールエーテル、ポリエチレングリコール等)、及びセレン化合物等を用いることができる。 The acidic bath is composed of a copper salt and an acid, and may contain additives. As the copper salt, for example, copper sulfate, copper sulfamate and the like can be used. As the acid, for example, sulfuric acid, sulfamic acid and the like can be used. As the additive, for example, a sulfur compound (thiourea, disulfone salt, mercaptobenzothiazole, or the like), an organic compound (polyoxyethylene glycol ether, polyethylene glycol, or the like), a selenium compound, or the like can be used.
銅ストライクめっき処理に好適に用いることができる酸性浴の各構成要素の好適な使用量は、銅塩:60〜200g/L、酸:30〜200g/L、添加剤:0〜100ppmである。 The preferred amounts of the respective components of the acidic bath that can be suitably used for the copper strike plating treatment are copper salt: 60 to 200 g / L, acid: 30 to 200 g / L, and additives: 0 to 100 ppm.
アルカリ性浴にはシアン系浴を用いることができ、シアン系浴は銅塩、シアン化アルカリ塩及び電導塩により構成され、添加剤が添加されてもよい。銅塩には、例えば、シアン化銅等を用いることができる。シアン化アルカリ塩には、例えば、シアン化カリウム及びシアン化ナトリウム等を用いることができる。 電導塩には、例えば、炭酸カリウム及び炭酸ナトリウム等を用いることができる。添加剤には、例えば、ロッシェル塩、亜セレン酸カリウム、亜セレン酸ナトリウム、チオシアン酸カリウム、酢酸鉛、酒石酸鉛等を用いることができる。 A cyanic bath can be used as the alkaline bath, and the cyanic bath is composed of a copper salt, an alkali cyanide salt, and a conductive salt, and an additive may be added. As the copper salt, for example, copper cyanide or the like can be used. As the alkali cyanide salt, for example, potassium cyanide, sodium cyanide and the like can be used. As the conductive salt, for example, potassium carbonate and sodium carbonate can be used. As the additive, for example, Rochelle salt, potassium selenite, sodium selenite, potassium thiocyanate, lead acetate, lead tartrate and the like can be used.
銅ストライクめっき処理に好適に用いることができるシアン系浴の各構成要素の好適な使用量は、銅塩:10〜80g/L、シアン化アルカリ酸:20〜50g/L、電導塩:10〜50g/L、添加剤:0〜60g/Lである。 Suitable amounts of each component of the cyanic bath that can be suitably used for the copper strike plating treatment are as follows: copper salt: 10 to 80 g / L, alkali cyanide: 20 to 50 g / L, and conductive salt: 10 to 10 g / L. 50 g / L, additive: 0 to 60 g / L.
銅ストライクめっき浴の浴温度、陽極材料、電流密度等の銅ストライクめっき条件は、用いるめっき浴及び必要とするめっき厚さ等に応じて適宜設定することができる。例えば、陽極材料には、電解銅等の可溶性陽極、及び/又は、ステンレス鋼、チタン白金板、酸化イリジウム等の不溶性陽極等を用いることが好ましい。また、好適なめっき条件としては、浴温:25〜70℃、電流密度:0.1〜6.0A/dm2、処理時間:5〜60秒を例示することができる。The copper strike plating conditions such as the bath temperature, anode material, and current density of the copper strike plating bath can be appropriately set according to the plating bath to be used, the required plating thickness, and the like. For example, as the anode material, it is preferable to use a soluble anode such as electrolytic copper and / or an insoluble anode such as stainless steel, a titanium platinum plate, and iridium oxide. Examples of suitable plating conditions include a bath temperature of 25 to 70 ° C., a current density of 0.1 to 6.0 A / dm 2 , and a processing time of 5 to 60 seconds.
なお、銅ストライクめっきは金属基材の全面に施してもよく、第二工程(S02)において銀めっきを形成させたい領域のみに施してもよい。 The copper strike plating may be applied to the entire surface of the metal substrate, or may be applied only to the region where silver plating is to be formed in the second step (S02).
(C)金ストライクめっき
金ストライクめっき浴としては、例えば、金塩、電導塩、キレート剤及び結晶成長剤を含むものを用いることができる。また、金ストライクめっき浴には光沢剤が添加されていてもよい。(C) Gold strike plating As the gold strike plating bath, for example, a bath containing a gold salt, a conductive salt, a chelating agent and a crystal growth agent can be used. In addition, a brightener may be added to the gold strike plating bath.
金塩には、例えば、シアン化金、シアン化第一金カリウム、シアン化第二金カリウム、亜硫酸金ナトリウム及びチオ硫酸金ナトリウム等を用いることができる。電導塩には、例えば、クエン酸カリウム、リン酸カリウム、ピロリン酸カリウム及びチオ硫酸カリウム等を用いることができる。キレート剤には、例えば、エチレンジアミン四酢酸及びメチレンホスホン酸等を用いることができる。結晶成長剤には、例えば、コバルト、ニッケル、タリウム、銀、パラジウム、錫、亜鉛、銅、ビスマス、インジウム、ヒ素及びカドミウム等を用いることができる。なお、pH調整剤として、例えば、ポリリン酸、クエン酸、酒石酸、水酸化カリウム及び塩酸等を添加してもよい。 As the gold salt, for example, gold cyanide, potassium gold cyanide, potassium gold cyanide, sodium gold sulfite, sodium gold thiosulfate and the like can be used. As the conductive salt, for example, potassium citrate, potassium phosphate, potassium pyrophosphate, potassium thiosulfate and the like can be used. As the chelating agent, for example, ethylenediaminetetraacetic acid, methylenephosphonic acid and the like can be used. As the crystal growth agent, for example, cobalt, nickel, thallium, silver, palladium, tin, zinc, copper, bismuth, indium, arsenic, cadmium and the like can be used. In addition, you may add polyphosphoric acid, citric acid, tartaric acid, potassium hydroxide, hydrochloric acid, etc. as a pH adjuster, for example.
金ストライクめっき処理に好適に用いることができる金ストライクめっき浴の各構成要素の好適な使用量は、金塩:1〜10g/L、電導塩:0〜200g/L、キレート剤:0〜30g/L、結晶成長剤:0〜30g/Lである。 Suitable amounts of each component of the gold strike plating bath that can be suitably used for the gold strike plating treatment are as follows: gold salt: 1 to 10 g / L, conductive salt: 0 to 200 g / L, chelating agent: 0 to 30 g. / L, crystal growth agent: 0 to 30 g / L.
金ストライクめっき浴の浴温度、陽極材料、電流密度等の金ストライクめっき条件は、用いるめっき浴及び必要とするめっき厚さ等に応じて適宜設定することができる。例えば、陽極材料には、チタン白金板及び酸化イリジウム等の不溶性陽極等を用いることが好ましい。また、好適なめっき条件としては、浴温:20〜40℃、電流密度:0.5〜5.0A/dm2、処理時間:5〜60秒、pH:0.5〜7.0を例示することができる。The gold strike plating conditions such as the bath temperature, anode material, and current density of the gold strike plating bath can be appropriately set according to the plating bath to be used, the required plating thickness, and the like. For example, it is preferable to use an insoluble anode such as a titanium platinum plate and iridium oxide as the anode material. Examples of suitable plating conditions include a bath temperature of 20 to 40 ° C., a current density of 0.5 to 5.0 A / dm 2 , a processing time of 5 to 60 seconds, and a pH of 0.5 to 7.0. can do.
なお、金ストライクめっきは金属基材の全面に施してもよく、第二工程(S02)において銀めっきを形成させたい領域のみに施してもよい。 The gold strike plating may be applied to the entire surface of the metal substrate, or may be applied only to the region where silver plating is to be formed in the second step (S02).
(D)ニッケルストライクめっき
ニッケルストライクめっき浴としては、例えば、ニッケル塩、陽極溶解促進剤及びpH緩衝剤を含むものを用いることができる。また、ニッケルストライクめっき浴には添加剤が添加されていてもよい。(D) Nickel strike plating As the nickel strike plating bath, for example, a bath containing a nickel salt, an anode dissolution promoter and a pH buffer can be used. Further, an additive may be added to the nickel strike plating bath.
ニッケル塩には、例えば、硫酸ニッケル、スルファミン酸ニッケル及び塩化ニッケル等を用いることができる。陽極溶解促進剤には、例えば、塩化ニッケル及び塩酸等を用いることができる。pH緩衝剤には、例えば、ホウ酸、酢酸ニッケル及びクエン酸等を用いることができる。添加剤には、例えば、1次光沢剤(サッカリン、ベンゼン、ナフタレン(ジ、トリ)、スルホン酸ナトリウム、スルホンアミド、スルフィン酸等)、2次光沢剤(有機化合物:ブチンジオール、クマリン、アリルアルデヒドスルホン酸等、金属塩:コバルト、鉛、亜鉛等)及びピット防止剤(ラウリル硫酸ナトリウム等)等を用いることができる。 As the nickel salt, for example, nickel sulfate, nickel sulfamate, nickel chloride and the like can be used. As the anode dissolution accelerator, for example, nickel chloride and hydrochloric acid can be used. As the pH buffer, for example, boric acid, nickel acetate, citric acid and the like can be used. Additives include, for example, primary brighteners (saccharin, benzene, naphthalene (di, tri), sodium sulfonate, sulfonamide, sulfinic acid, etc.), secondary brighteners (organic compounds: butynediol, coumarin, allylaldehyde) Sulfonic acid and the like, metal salts: cobalt, lead, zinc, etc.) and pit inhibitors (sodium lauryl sulfate, etc.) can be used.
ニッケルストライクめっき処理に好適に用いることができるニッケルストライクめっき浴の各構成要素の好適な使用量は、ニッケル塩:200〜600g/L、陽極溶解促進剤:0〜300g/L、pH緩衝剤:0〜50g/L、添加剤:0〜20g/Lである。 Suitable amounts of each component of the nickel strike plating bath that can be suitably used for the nickel strike plating treatment are: nickel salt: 200 to 600 g / L, anodic dissolution accelerator: 0 to 300 g / L, pH buffer: 0 to 50 g / L, additive: 0 to 20 g / L.
ニッケルストライクめっき浴の浴温度、陽極材料、電流密度等のニッケルストライクめっき条件は、用いるめっき浴及び必要とするめっき厚さ等に応じて適宜設定することができる。例えば、陽極材料には、電解ニッケル、カーボナイズドニッケル、デポライズドニッケル、サルファニッケル等の可溶性陽極等を用いることが好ましい。また、好適なめっき条件としては、浴温:20〜70℃、電流密度:0.1〜15.0A/dm2、処理時間:5〜60秒、pH:0.5〜4.5を例示することができる。Nickel strike plating conditions such as a bath temperature, an anode material, and a current density of the nickel strike plating bath can be appropriately set according to a plating bath to be used, a required plating thickness, and the like. For example, it is preferable to use a soluble anode such as electrolytic nickel, carbonized nickel, deposited nickel, and sulfur nickel as the anode material. Examples of suitable plating conditions include a bath temperature of 20 to 70 ° C., a current density of 0.1 to 15.0 A / dm 2 , a processing time of 5 to 60 seconds, and a pH of 0.5 to 4.5. can do.
なお、ニッケルストライクめっきは金属基材の全面に施してもよく、第二工程(S02)において銀めっきを形成させたい領域のみに施してもよい。 The nickel strike plating may be applied to the entire surface of the metal substrate, or may be applied only to the region where silver plating is to be formed in the second step (S02).
上記各種ストライクめっきは1種類のみを施しても、複数のストライクめっきを積層させてもよいが、銀ストライクめっきのみを施すことが好ましい。また、リフロー錫めっき層及び反応層を完全に剥離させた領域の表面状態により、ストライクめっき処理なしでも銀めっきの密着状況が良好となる場合は、当該ストライクめっき処理を省略することができる。 Although only one type of the above strike plating may be applied or a plurality of strike platings may be laminated, it is preferable to apply only the silver strike plating. In addition, when the adhesion state of silver plating becomes good without the strike plating treatment depending on the surface state of the region where the reflow tin plating layer and the reaction layer are completely peeled off, the strike plating treatment can be omitted.
(6)銀めっき処理(第二工程(S02))
銀めっき処理は第一工程(S01)においてリフロー錫めっき層及び反応層を完全に剥離させた領域の少なくとも一部、又は、ストライクめっき処理工程(S02’)においてストライクめっきされた領域のうちの少なくとも一部に、概略的には単一のより厚い銀めっき層を形成させるための処理である。(6) Silver plating treatment (second step (S02))
The silver plating treatment is at least a part of the region where the reflow tin plating layer and the reaction layer are completely peeled off in the first step (S01), or at least the strike plating region in the strike plating treatment step (S02 ′). In part, this is a process to form a single, thicker silver plating layer.
銀めっき処理には、本発明の効果を損なわない範囲で従来公知の種々の銀めっき手法を用いることができるが、銀ストライクめっきと比較して、めっき浴中の銀塩の濃度を高く、電導塩の濃度を低くすることが好ましい。 For the silver plating treatment, various conventionally known silver plating techniques can be used as long as the effects of the present invention are not impaired. However, compared to silver strike plating, the concentration of silver salt in the plating bath is increased, and the conductivity is increased. It is preferred to lower the salt concentration.
銀めっき処理に好適に用いることができる銀めっき浴は、銀塩と、シアン化アルカリ塩と、電導塩と、により構成され、必要に応じて添加剤が添加されていてもよい。各構成要素の好適な使用量は、銀塩:40〜150g/L、シアン化アルカリ塩:20〜200g/L、電導塩:10〜300g/L、添加剤:0〜10g/Lである。 The silver plating bath that can be suitably used for the silver plating treatment is composed of a silver salt, an alkali cyanide salt, and a conductive salt, and an additive may be added as necessary. Suitable amounts of the respective components are: silver salt: 40 to 150 g / L, alkali cyanide: 20 to 200 g / L, conductive salt: 10 to 300 g / L, and additive: 0 to 10 g / L.
銀塩としては、例えば、シアン化銀、シアン化銀カリウム、ヨウ化銀、酸化銀、硫酸銀、硝酸銀、塩化銀等を用いることができる。シアン化アルカリ塩としては、例えば、シアン化カリウム及びシアン化ナトリウム等を用いることができる。電導塩としては、例えば、シアン化カリウム、シアン化ナトリウム、ピロリン酸カリウム、ヨウ化カリウム、チオ硫酸ナトリウム等を用いることができる。 As the silver salt, for example, silver cyanide, potassium silver cyanide, silver iodide, silver oxide, silver sulfate, silver nitrate, silver chloride and the like can be used. As the alkali cyanide salt, for example, potassium cyanide, sodium cyanide and the like can be used. As the conductive salt, for example, potassium cyanide, sodium cyanide, potassium pyrophosphate, potassium iodide, sodium thiosulfate and the like can be used.
添加剤としては、例えば、金属添加剤(アンチモン、セレン、テルル等)及び有機添加剤(ベンゼンスルホン酸、メルカプタン類、エチレンジアミン四酢酸等)を用いることができる。 As the additives, for example, metal additives (antimony, selenium, tellurium, etc.) and organic additives (benzenesulfonic acid, mercaptans, ethylenediaminetetraacetic acid, etc.) can be used.
めっき浴の浴温度、陽極材料、電流密度等のめっき条件は、用いるめっき浴及び必要とするめっき厚さ等に応じて適宜設定することができる。例えば、陽極材料には、銀、ステンレス鋼、チタン白金板、酸化イリジウム等の不溶性陽極を用いることが好ましい。また、好適なめっき条件としては、浴温:15〜70℃、電流密度:0.5〜20.0A/dm2、処理時間:0.5〜10000秒、pH:7.0〜10.0を例示することができる。Plating conditions such as bath temperature, anode material, and current density of the plating bath can be appropriately set according to the plating bath to be used, the required plating thickness, and the like. For example, as the anode material, it is preferable to use an insoluble anode such as silver, stainless steel, a titanium platinum plate, and iridium oxide. Suitable plating conditions include a bath temperature of 15 to 70 ° C., a current density of 0.5 to 20.0 A / dm 2 , a processing time of 0.5 to 10000 seconds, and a pH of 7.0 to 10.0. Can be exemplified.
なお、銀めっきは金属基材及び錫めっき層の全面に施してもよく、第一工程(S01)においてリフロー錫めっき層及び反応層を完全に剥離させた領域、又は、ストライクめっき処理工程(S02’)においてストライクめっきを形成させた領域のみに施してもよい。 The silver plating may be applied to the entire surface of the metal substrate and the tin plating layer. The silver plating may be applied to the entire area of the reflow tin plating layer and the reaction layer in the first step (S01), or the strike plating step (S02). ') May be applied only to the region where the strike plating is formed.
≪めっき材≫
図2は、本発明の銀めっき部材の実施形態の一例における概略断面図である。めっき材1は、金属基材2の表面にリフロー錫めっき層4及び銀めっき層6が形成されている。また、リフロー錫めっき層4と金属基材2との界面には反応層8が形成されている。≪Plating material≫
FIG. 2 is a schematic sectional view of an example of the embodiment of the silver-plated member of the present invention. In the
反応層8は錫めっき層にリフロー処理を施してリフロー錫めっき層4を形成させる工程において、金属基材2と錫めっき層との原子拡散及び反応によって形成されるものである。銀めっき層6はリフロー錫めっき層4と反応層8を完全に剥離した領域に形成されているため、銀めっき層6と金属基材2との間には、リフロー錫めっき層4及び反応層8が存在しない。
The
金属基材2の金属は、電導性を有している限り特に限定されず、例えば、アルミニウム及びアルミニウム合金、鉄及び鉄合金、チタン及びチタン合金、ステンレス、銅及び銅合金等を挙げることができるが、なかでも、電導性・熱伝導性・展延性に優れているという理由から、銅及び銅合金を用いることが好ましい。
The metal of the
銀めっき層6と金属基材2との密着性が十分でない場合は、銀めっき層6と金属基材2との間にストライクめっき層10が形成されるが、ストライクめっき層10は連続する膜形状であっても、本発明の効果を損なわない範囲で、粒状や島状の不連続な膜形状であってもよい。後者の場合、粒状及び島状部分が部分的に連続していてもよい。なお、ストライクめっき条件によっては、ストライクめっき層10の識別が困難な場合も存在する。ストライクめっき層10の厚さは0.01〜0.5μmであることが好ましい。
When the adhesion between the
ストライクめっき層10の表面には、銀めっき層6が形成されている。銀めっき層6の厚さは0.1μm〜50μmであることが好ましく、ビッカース硬度は10HV〜250HVであることが好ましい。0.1μm未満では銀めっき層6の耐摩耗性を利用することができず、50μmより厚い場合は銀の使用量が増加するため経済的でない。
≪接続端子≫
本発明の銀めっき部材は、各種接続端子に好適に用いることができる。具体的には、耐摩耗性が要求される嵌合部の最表面をリフロー錫めっき層4とし、電導性が要求される接点部の最表面を銀めっき層6とすることで、安価で高性能な接続端子を製造することができる。ここでいう嵌合部とは、屈曲やカシメ等により他の部材を挟む等して、他の部材と接続される部分のことである。≪Connection terminal≫
The silver plated member of the present invention can be suitably used for various connection terminals. Specifically, the outermost surface of the fitting portion where abrasion resistance is required is the reflow
図3は、本発明の接続端子の一例を示す概略図である。図3に示されている接続端子20は高圧端子であるが、接続端子20において電導性が要求される接点部分22の最表面は銀めっき層6となっており、耐摩耗性を要求されるハーネスとの接続部分24は最表面がリフロー錫めっき層4となっている。
FIG. 3 is a schematic view showing an example of the connection terminal of the present invention. Although the
従来、接続端子には軸受性及び加工性に優れたリフロー錫めっきが多く用いられてきたが、耐摩耗性に乏しい、電気抵抗が高い、といった問題が存在した。これに対し、最表面を銀めっき層6とすることで、銀めっき層6が有する優れた耐摩耗性、低い電気抵抗、及び良好な耐熱性を利用することができる。
Conventionally, reflow tin plating excellent in bearing properties and workability has been often used for connection terminals, but has problems such as poor wear resistance and high electric resistance. On the other hand, when the outermost surface is the
めっき材1においては、銀めっき層6と金属基材2との間にリフロー錫めっき層4が存在しないため、錫と銀との拡散及び反応に伴う金属間化合物(例えば、Ag3Sn)の形成によるリフロー錫めっき層4及び/又は銀めっき層6の脆化を極めて効果的に抑制することができる。In the
更に、摺動摩耗が顕著な領域の最表面を銀めっき層6とすることで、摺動摩耗によって飛散したリフロー錫めっき層4の破片を原因とする、発火及び感電等の重大な事故を防止することができる。
Furthermore, by setting the outermost surface of the region where the sliding wear is remarkable to be the
以上、本発明の代表的な実施形態について説明したが、本発明はこれらのみに限定されるものではなく、種々の設計変更が可能であり、それら設計変更は全て本発明の技術的範囲に含まれる。 As described above, the representative embodiments of the present invention have been described, but the present invention is not limited thereto, and various design changes are possible, and all of these design changes are included in the technical scope of the present invention. It is.
≪実施例1≫
市販のリフロー錫めっき材(厚さ0.6mmの銅合金材へ錫めっきを施し、リフロー処理(前工程)を施したもの)に以下の工程で0.1μmの銀めっき層を形成させた。キザイ株式会社製のマックスクリーンNG−30を40g/L含有する50℃の洗浄処理液に、上記錫めっき材を60秒間浸漬させることで、錫めっき層の表面に洗浄処理を施した。<< Example 1 >>
A 0.1 μm silver plating layer was formed on a commercially available reflow tin-plated material (a copper alloy material having a thickness of 0.6 mm, which was subjected to tin plating and subjected to a reflow treatment (pre-process)) in the following steps. The surface of the tin plating layer was subjected to a cleaning treatment by immersing the tin plating material in a cleaning treatment solution at 50 ° C. containing 40 g / L of Mac Screen NG-30 manufactured by Kizai Co., Ltd. for 60 seconds.
次に、株式会社JCU社製のエバストリップST−40A及びST−401NCをそれぞれ450ml/L及び100ml/L含有する25℃の剥離液に、上記洗浄処理後の錫めっき材を360秒間浸漬させて剥離処理(第一工程)を施した。なお、剥離が不要な領域についてはマスキングテープ(絶縁テープ)を貼り付けることによってマスキングを施している。 Next, the tin-plated material after the above-mentioned cleaning treatment was immersed for 360 seconds in a stripping solution at 25 ° C containing 450 ml / L and 100 ml / L of Ebastrip ST-40A and ST-401NC manufactured by JCU Corporation, respectively. A peeling treatment (first step) was performed. Note that masking is performed by attaching a masking tape (insulating tape) to a region where peeling is not required.
次に、40g/Lのシアン化銀、30g/Lのシアン化カリウム、及び30g/Lの炭酸カリウムを含む銀めっき浴を用い、陽極材料をチタン白金板、陰極材料を剥離処理後の錫めっき材として、浴温:30℃、電流密度:4A/dm2の条件で3秒間の処理を施し、0.1μmの単一の銀めっき層を形成させた(第二工程)。Next, using a silver plating bath containing 40 g / L of silver cyanide, 30 g / L of potassium cyanide, and 30 g / L of potassium carbonate, the anode material was used as a titanium platinum plate, and the cathode material was used as a tin plating material after peeling treatment. A treatment was performed for 3 seconds under the conditions of a bath temperature of 30 ° C. and a current density of 4 A / dm 2 to form a single silver plating layer of 0.1 μm (second step).
[評価]
(1)密着性評価
上記のようにして作製しためっき材について密着性の評価を行った。セロハンテープ(ニチバン株式会社製の#405)を指圧にて銀めっき層に押し付け、当該セロハンテープを引き剥がした後に銀めっき層の剥がれや膨れが発生しなかった場合は○、発生した場合は×とし、得られた結果を表1に示した。[Evaluation]
(1) Evaluation of Adhesion Adhesion was evaluated for the plated material prepared as described above. A cellophane tape (# 405, made by Nichiban Co., Ltd.) is pressed against the silver plating layer by finger pressure, and when the silver plating layer does not peel or swell after peeling off the cellophane tape, x; Table 1 shows the obtained results.
(2)金属間化合物(Ag3Sn)相の確認
上記のようにして作製しためっき材について金属間化合物(Ag3Sn)相が形成しているか否かを確認した。具体的には、室温で50時間放置しためっき材に対するX線回折結果により、金属間化合物(Ag3Sn)相に由来する回折ピークの有無を確認した。用いた装置は株式会社リガク製のUltima IV(検出器D/teX Ultra、CuKα線使用)であり、40kV−40mA、ステップ角0.1°、スキャン角度範囲20°〜100°の条件で測定した。金属間化合物(Ag3Sn)相に由来する回折ピークが確認された場合は×、確認されなかった場合は○とし、得られた結果を表1に示した。(2) to confirm whether an intermetallic compound (Ag 3 Sn) phase confirmed the above manner intermetallic compounds for plating material produced by (Ag 3 Sn) phase is formed. Specifically, the presence or absence of a diffraction peak derived from the intermetallic compound (Ag 3 Sn) phase was confirmed by the X-ray diffraction result of the plated material left at room temperature for 50 hours. The device used was Rigaku's Ultima IV (detector D / teX Ultra, using CuKα radiation), which was measured under the conditions of 40 kV-40 mA, step angle 0.1 °, scan angle range 20 ° -100 °. . When a diffraction peak derived from the intermetallic compound (Ag 3 Sn) phase was confirmed, the result was ×, and when it was not confirmed, the result was ○. The obtained results are shown in Table 1.
≪実施例2≫
銀めっき処理の時間を26秒間とし、厚さ1μmの銀めっき層を形成させた以外は、実施例1と同様にしてめっき材を作製し、各種評価を行った。得られた結果を表1に示す。<< Example 2 >>
Except that the silver plating time was set to 26 seconds and a silver plating layer having a thickness of 1 μm was formed, plating materials were prepared in the same manner as in Example 1, and various evaluations were made. Table 1 shows the obtained results.
≪実施例3≫
銀めっき処理の時間を130秒間とし、厚さ5μmの銀めっき層を形成させた以外は、実施例1と同様にしてめっき材を作製し、各種評価を行った。得られた結果を表1に示す。Example 3
Except that the silver plating time was set to 130 seconds and a silver plating layer having a thickness of 5 μm was formed, plating materials were prepared in the same manner as in Example 1, and various evaluations were performed. Table 1 shows the obtained results.
≪実施例4≫
銀めっき処理の時間を260秒間とし、厚さ10μmの銀めっき層を形成させた以外は、実施例1と同様にしてめっき材を作製し、各種評価を行った。得られた結果を表1に示す。Example 4
Plating materials were prepared and various evaluations were performed in the same manner as in Example 1, except that the silver plating time was 260 seconds and a silver plating layer having a thickness of 10 μm was formed. Table 1 shows the obtained results.
≪実施例5≫
実施例1の剥離処理まで施した後、3g/Lのシアン化銀、150g/Lのシアン化カリウム、及び15g/Lの炭酸カリウムを含む銀ストライクめっき浴を用い、陽極材料をチタン白金板、陰極材料を剥離処理後の錫めっき材として、浴温:室温、電流密度:2A/dm2の条件で10秒間の銀ストライクめっき処理を施した(ストライクめっき処理工程)。その後、銀めっき処理の時間を130秒間とし、厚さ5μmの銀めっき層を形成させ、各種評価を行った。得られた結果を表1に示す。Example 5
After performing the peeling treatment of Example 1, using a silver strike plating bath containing 3 g / L of silver cyanide, 150 g / L of potassium cyanide, and 15 g / L of potassium carbonate, using a titanium platinum plate as an anode material and a cathode material Was subjected to silver strike plating for 10 seconds under conditions of bath temperature: room temperature and current density: 2 A / dm 2 (strike plating step). Thereafter, the silver plating process was performed for 130 seconds, a silver plating layer having a thickness of 5 μm was formed, and various evaluations were performed. Table 1 shows the obtained results.
≪実施例6≫
実施例1の剥離処理まで施した後、10g/Lのシアン化銅、30g/Lのシアン化カリウム、及び15g/Lの炭酸カリウムを含む銅ストライクめっき浴を用い、陽極材料をチタン白金板、陰極材料を剥離処理後の錫めっき材として、浴温:室温、電流密度:2A/dm2の条件で10秒間の銅ストライクめっき処理を施した(ストライクめっき処理工程)。その後、実施例1と同様の条件で、銀めっき処理の時間を130秒間とし、厚さ5μmの銀めっき層を形成させ、各種評価を行った。得られた結果を表1に示す。Example 6
After performing the peeling treatment of Example 1, using a copper strike plating bath containing 10 g / L of copper cyanide, 30 g / L of potassium cyanide, and 15 g / L of potassium carbonate, using a titanium platinum plate as an anode material and a cathode material Was subjected to a copper strike plating treatment for 10 seconds under the conditions of a bath temperature: room temperature and a current density: 2 A / dm 2 (strike plating treatment step). Thereafter, under the same conditions as in Example 1, the silver plating time was 130 seconds, a silver plating layer having a thickness of 5 μm was formed, and various evaluations were made. Table 1 shows the obtained results.
≪実施例7≫
実施例1の剥離処理まで施した後、5g/Lのシアン化第一金カリウム、150g/Lのクエン酸カリウム、2g/Lの硫酸コバルト、及び5g/LのEDTA−2Kを含む金ストライクめっき浴を用い、陽極材料をチタン白金板、陰極材料を剥離処理後の錫めっき材として、浴温:室温、電流密度:2A/dm2の条件で10秒間の金ストライクめっき処理を施した(ストライクめっき処理工程)。その後、実施例1と同様の条件で、銀めっき処理の時間を130秒間とし、厚さ5μmの銀めっき層を形成させ、各種評価を行った。得られた結果を表1に示す。Example 7
After being subjected to the release treatment of Example 1, gold strike plating containing 5 g / L potassium gold (I) cyanide, 150 g / L potassium citrate, 2 g / L cobalt sulfate, and 5 g / L EDTA-2K Using a bath, a gold strike plating treatment was performed for 10 seconds under the conditions of a bath temperature: room temperature and a current density: 2 A / dm 2 using a titanium platinum plate as an anode material and a tin-plated material after peeling treatment as a cathode material (strike). Plating process). Thereafter, under the same conditions as in Example 1, the silver plating time was 130 seconds, a silver plating layer having a thickness of 5 μm was formed, and various evaluations were made. Table 1 shows the obtained results.
≪実施例8≫
実施例1の剥離処理まで施した後、200g/Lの硫酸ニッケル・6水和物、50g/Lの塩化ニッケル・6水和物、及び30g/Lのホウ酸を含むニッケルストライクめっき浴を用い、陽極材料を電解ニッケル板、陰極材料を剥離処理後の錫めっき材として、浴温:室温、電流密度:2A/dm2の条件で10秒間のニッケルストライクめっき処理を施した(ストライクめっき処理工程)。その後、実施例1と同様の条件で、銀めっき処理の時間を130秒間とし、厚さ5μmの銀めっき層を形成させ、各種評価を行った。得られた結果を表1に示す。Example 8
After performing the peeling treatment of Example 1, a nickel strike plating bath containing 200 g / L nickel sulfate hexahydrate, 50 g / L nickel chloride hexahydrate, and 30 g / L boric acid was used. A nickel strike plating treatment was performed for 10 seconds at a bath temperature of room temperature and a current density of 2 A / dm 2 , using an anode material as an electrolytic nickel plate and a cathode material as a tin plating material after peeling treatment (strike plating treatment step). ). Thereafter, under the same conditions as in Example 1, the silver plating time was 130 seconds, a silver plating layer having a thickness of 5 μm was formed, and various evaluations were made. Table 1 shows the obtained results.
≪比較例1≫
剥離処理を施さず、リフロー錫めっき層に対して実施例1と同様にして厚さ0.1μmの銀めっき層を有するめっき材を作製し、各種評価を行った。得られた結果を表1に示す。<< Comparative Example 1 >>
A plating material having a silver plating layer having a thickness of 0.1 μm was prepared on the reflow tin plating layer in the same manner as in Example 1 without performing a peeling treatment, and various evaluations were made. Table 1 shows the obtained results.
≪比較例2≫
剥離処理を施さず、リフロー錫めっき層に対して実施例4と同様にして厚さ10μmの銀めっき層を有するめっき材を作製し、各種評価を行った。得られた結果を表1に示す。<< Comparative Example 2 >>
A plating material having a silver plating layer having a thickness of 10 μm was prepared on the reflow tin plating layer in the same manner as in Example 4 without performing the peeling treatment, and various evaluations were made. Table 1 shows the obtained results.
表1に示す結果から、本発明の実施例に関しては、銀めっき層の厚さに係らず、銀めっき層と金属基材とが良好に接合されていることが分かる。これに対し、剥離処理を施さない場合は銀めっき層の厚さに係らず、密着性評価によって銀めっき層が剥離しており、銀めっき層と金属基材とが良好に接合されていないことが確認される(比較例1及び2)。 From the results shown in Table 1, it can be seen that the silver plating layer and the metal base material were satisfactorily bonded to the examples of the present invention regardless of the thickness of the silver plating layer. On the other hand, when the release treatment is not performed, regardless of the thickness of the silver plating layer, the silver plating layer is peeled off by the adhesion evaluation, and the silver plating layer and the metal base material are not bonded well. Is confirmed (Comparative Examples 1 and 2).
また、本発明の実施例に関しては、金属間化合物(Ag3Sn)相が形成されていない。これに対し、リフロー錫めっき層を剥離させない場合(比較例1及び2)では、金属間化合物(Ag3Sn)相が形成されており、銀めっき層の脆化が進行している。In the examples of the present invention, no intermetallic compound (Ag 3 Sn) phase was formed. On the other hand, when the reflow tin plating layer was not peeled off (Comparative Examples 1 and 2), an intermetallic compound (Ag 3 Sn) phase was formed, and embrittlement of the silver plating layer was progressing.
1・・・めっき材、
2・・・金属基材、
4・・・リフロー錫めっき層、
6・・・銀めっき層、
8・・・反応層、
10・・・ストライクめっき層、
20・・・接続端子、
22・・・接点部分、
24・・・接続部分。1 ... plating material,
2 ... metal substrate,
4 ... reflow tin plating layer
6 ... Silver plating layer,
8 ... reaction layer,
10 ... strike plating layer,
20 connection terminal,
22 ... contact part,
24 connection part.
Claims (4)
前記リフロー錫めっき層及び前記反応層を完全に剥離した領域の少なくとも一部に銀めっき処理を施して銀めっき層を形成する第二工程と、を含むこと、
を特徴とする銀めっき部材の製造方法。 A metal substrate having a reflow tin plating layer at least in part, from a metal substrate having a reaction layer at an interface between the reflow tin plating layer and the metal substrate, the reflow tin plating layer and the reaction layer A first step of completely peeling off at least a part,
Include, a second step of forming a silver plating layer and facilities silver plating on at least a portion of the completely peeled reflow tin-plated layer and the reaction layer region,
A method for producing a silver-plated member.
を特徴とする請求項1に記載の銀めっき部材の製造方法。 As a preliminary treatment of the second step, at least a part of the region where the reflow tin plating layer and the reaction layer are completely peeled off, from a group of silver strike plating, copper strike plating, gold strike plating, and nickel strike plating. Applying one or more selected strike platings,
The method for producing a silver-plated member according to claim 1, wherein:
を特徴とする請求項2に記載の銀めっき部材の製造方法。 The strike plating is silver strike plating;
The method for producing a silver-plated member according to claim 2 , wherein:
前記銀めっき層のビッカース硬度が10HV〜250HVであること、
を特徴とする請求項1〜3のいずれかに記載の銀めっき部材の製造方法。
The thickness of the silver plating layer is 0.1 μm to 50 μm,
Vickers hardness of the silver plating layer is 10 HV to 250 HV,
The method for producing a silver-plated member according to claim 1, wherein:
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KR20230081905A (en) * | 2021-11-30 | 2023-06-08 | (주)엠케이켐앤텍 | Plating solution for conductive particles used in semiconductor test socket, plating method thereof, and conductive particles plated using the same |
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JP6665387B2 (en) * | 2013-12-20 | 2020-03-13 | オリエンタル鍍金株式会社 | Silver plated member and method of manufacturing the same |
CN108779567A (en) * | 2017-03-13 | 2018-11-09 | 华为技术有限公司 | The electro-plating method of terminal material belt |
JP7195201B2 (en) | 2019-03-29 | 2022-12-23 | Dowaメタルテック株式会社 | Plating material and its manufacturing method |
CN113913879B (en) * | 2021-09-30 | 2022-08-09 | 深圳市联合蓝海黄金材料科技股份有限公司 | Cyanide-free electrogilding solution, use thereof, method for producing gold bumps by electrogilding, gold bumps and electronic components |
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