JP6058895B2 - ガリウムインク、並びにその製造方法および使用方法 - Google Patents

ガリウムインク、並びにその製造方法および使用方法 Download PDF

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Publication number
JP6058895B2
JP6058895B2 JP2012029614A JP2012029614A JP6058895B2 JP 6058895 B2 JP6058895 B2 JP 6058895B2 JP 2012029614 A JP2012029614 A JP 2012029614A JP 2012029614 A JP2012029614 A JP 2012029614A JP 6058895 B2 JP6058895 B2 JP 6058895B2
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JP
Japan
Prior art keywords
gallium
substituted
ink
alkyl group
pyrazine
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2012029614A
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English (en)
Japanese (ja)
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JP2012178560A (ja
JP2012178560A5 (https=
Inventor
デービッド・モズレー
デービッド・トーセン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials International LLC
Original Assignee
Rohm and Haas Electronic Materials LLC
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Application filed by Rohm and Haas Electronic Materials LLC filed Critical Rohm and Haas Electronic Materials LLC
Publication of JP2012178560A publication Critical patent/JP2012178560A/ja
Publication of JP2012178560A5 publication Critical patent/JP2012178560A5/ja
Application granted granted Critical
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Expired - Fee Related legal-status Critical Current
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00—Inks
    • C09D11/52—Electrically conductive inks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/02—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by baking
    • B05D3/0254—After-treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/02—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by baking
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3241—Materials thereof being conductive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3436—Deposited materials, e.g. layers characterised by the chemical composition being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Inks, Pencil-Leads, Or Crayons (AREA)
  • Photovoltaic Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Recrystallisation Techniques (AREA)
  • Chemically Coating (AREA)
JP2012029614A 2011-02-18 2012-02-14 ガリウムインク、並びにその製造方法および使用方法 Expired - Fee Related JP6058895B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/030,171 2011-02-18
US13/030,171 US8372485B2 (en) 2011-02-18 2011-02-18 Gallium ink and methods of making and using same

Publications (3)

Publication Number Publication Date
JP2012178560A JP2012178560A (ja) 2012-09-13
JP2012178560A5 JP2012178560A5 (https=) 2015-03-19
JP6058895B2 true JP6058895B2 (ja) 2017-01-11

Family

ID=46605119

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012029614A Expired - Fee Related JP6058895B2 (ja) 2011-02-18 2012-02-14 ガリウムインク、並びにその製造方法および使用方法

Country Status (7)

Country Link
US (2) US8372485B2 (https=)
JP (1) JP6058895B2 (https=)
KR (1) KR101889762B1 (https=)
CN (1) CN102643570B (https=)
DE (1) DE102012003205A1 (https=)
FR (1) FR2971786B1 (https=)
TW (1) TWI490281B (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8343267B2 (en) * 2011-02-18 2013-01-01 Rohm And Haas Electronic Materials Llc Gallium formulated ink and methods of making and using same
US8372485B2 (en) * 2011-02-18 2013-02-12 Rohm And Haas Electronic Materials Llc Gallium ink and methods of making and using same
TWI496735B (zh) * 2011-03-23 2015-08-21 Nat Univ Tsing Hua 氮化物奈米材料之製備方法
JP6099472B2 (ja) * 2013-04-26 2017-03-22 Ｄｏｗａエレクトロニクス株式会社 金属ナノ粒子分散体、金属ナノ粒子分散体の製造方法および接合方法
CN103819963B (zh) * 2014-02-28 2016-02-10 惠州市立美特环保油墨有限公司 一种uv无苯光油及其制备方法
US11706874B2 (en) 2019-08-06 2023-07-18 Microsoft Technology Licensing, Llc Electronic-circuit printing using low-cost ink

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3101892A1 (de) * 1981-01-22 1982-08-26 Röhm GmbH, 6100 Darmstadt Verfahren zur herstellung von waessrigen kunststoffdispersionen mit hohem pigmentbindevermoegen
WO1993004212A1 (en) 1991-08-26 1993-03-04 Eastman Kodak Company Preparation of group iii element-group vi element compound films
GB9315771D0 (en) 1993-07-30 1993-09-15 Epichem Ltd Method of depositing thin metal films
US5539038A (en) * 1994-10-03 1996-07-23 Rexham Graphics, Inc. Ink jet ink and process for making same
US6126740A (en) 1995-09-29 2000-10-03 Midwest Research Institute Solution synthesis of mixed-metal chalcogenide nanoparticles and spray deposition of precursor films
GB9711799D0 (en) 1997-06-07 1997-08-06 Vecht Aron Preparation of sulphides and selenides
JP2000026775A (ja) * 1998-07-10 2000-01-25 Kao Corp 水系インク
US7524528B2 (en) 2001-10-05 2009-04-28 Cabot Corporation Precursor compositions and methods for the deposition of passive electrical components on a substrate
JP2003173826A (ja) * 2001-12-05 2003-06-20 Mitsubishi Paper Mills Ltd 半導体電極の作製方法、並びにそれを用いた光電変換素子
US6875661B2 (en) 2003-07-10 2005-04-05 International Business Machines Corporation Solution deposition of chalcogenide films
US7663057B2 (en) 2004-02-19 2010-02-16 Nanosolar, Inc. Solution-based fabrication of photovoltaic cell
US7494841B2 (en) 2006-05-12 2009-02-24 International Business Machines Corporation Solution-based deposition process for metal chalcogenides
US8617640B2 (en) 2006-06-12 2013-12-31 Nanosolar, Inc. Thin-film devices formed from solid group IIIA alloy particles
WO2008057119A1 (en) 2006-11-09 2008-05-15 Midwest Research Institue Formation of copper-indium-selenide and/or copper-indium-gallium-selenide films from indium selenide and copper selenide precursors
EP2944383A3 (en) 2006-11-09 2016-02-10 Alliance for Sustainable Energy, LLC Precursors for formation of copper selenide, indium selenide, copper indium diselenide, and/or copper indium gallium diselenide films
US20080280030A1 (en) 2007-01-31 2008-11-13 Van Duren Jeoren K J Solar cell absorber layer formed from metal ion precursors
WO2008129250A2 (en) * 2007-04-18 2008-10-30 Nanoco Technologies Limited Fabrication of electrically active films based on multiple layers
KR101144807B1 (ko) * 2007-09-18 2012-05-11 엘지전자 주식회사 태양전지 박막조성용 잉크와 그 제조방법, 이를 이용한ｃｉｇｓ 박막형 태양전지, 및 그 제조 방법
CN101870458B (zh) * 2009-04-22 2012-05-09 钟润文 多元金属硫族元素化合物和靶材及涂层材料的制备方法
US8277894B2 (en) * 2009-07-16 2012-10-02 Rohm And Haas Electronic Materials Llc Selenium ink and methods of making and using same
US8071875B2 (en) * 2009-09-15 2011-12-06 Xiao-Chang Charles Li Manufacture of thin solar cells based on ink printing technology
JP2011129564A (ja) * 2009-12-15 2011-06-30 Fujifilm Corp 光電変換半導体膜を形成する塗布膜及びその製造方法、光電変換半導体膜、光電変換素子、及び太陽電池
US8282995B2 (en) * 2010-09-30 2012-10-09 Rohm And Haas Electronic Materials Llc Selenium/group 1b/group 3a ink and methods of making and using same
WO2012075267A1 (en) * 2010-12-03 2012-06-07 E. I. Du Pont De Nemours And Company Inks and processes for preparing copper indium gallium sulfide/selenide coatings and films
US8343267B2 (en) * 2011-02-18 2013-01-01 Rohm And Haas Electronic Materials Llc Gallium formulated ink and methods of making and using same
US8372485B2 (en) * 2011-02-18 2013-02-12 Rohm And Haas Electronic Materials Llc Gallium ink and methods of making and using same

Also Published As

Publication number Publication date
DE102012003205A1 (de) 2012-08-23
CN102643570B (zh) 2014-10-29
JP2012178560A (ja) 2012-09-13
KR20120095319A (ko) 2012-08-28
TWI490281B (zh) 2015-07-01
FR2971786A1 (fr) 2012-08-24
US20130122205A1 (en) 2013-05-16
US8673401B2 (en) 2014-03-18
CN102643570A (zh) 2012-08-22
US8372485B2 (en) 2013-02-12
US20120214292A1 (en) 2012-08-23
TW201241111A (en) 2012-10-16
KR101889762B1 (ko) 2018-08-20
FR2971786B1 (fr) 2013-05-10

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