JP6045000B2 - 六方晶ダイヤモンド単相バルク焼結体およびその製造方法 - Google Patents
六方晶ダイヤモンド単相バルク焼結体およびその製造方法 Download PDFInfo
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- JP6045000B2 JP6045000B2 JP2014530476A JP2014530476A JP6045000B2 JP 6045000 B2 JP6045000 B2 JP 6045000B2 JP 2014530476 A JP2014530476 A JP 2014530476A JP 2014530476 A JP2014530476 A JP 2014530476A JP 6045000 B2 JP6045000 B2 JP 6045000B2
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B1/00—Single-crystal growth directly from the solid state
- C30B1/12—Single-crystal growth directly from the solid state by pressure treatment during the growth
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/52—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbon, e.g. graphite
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
- B01J3/065—Presses for the formation of diamonds or boronitrides
- B01J3/067—Presses using a plurality of pressing members working in different directions
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
- C04B35/645—Pressure sintering
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/0605—Composition of the material to be processed
- B01J2203/061—Graphite
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- C—CHEMISTRY; METALLURGY
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/42—Non metallic elements added as constituents or additives, e.g. sulfur, phosphor, selenium or tellurium
- C04B2235/422—Carbon
- C04B2235/425—Graphite
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
- C04B2235/52—Constituents or additives characterised by their shapes
- C04B2235/5292—Flakes, platelets or plates
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/80—Phases present in the sintered or melt-cast ceramic products other than the main phase
- C04B2235/81—Materials characterised by the absence of phases other than the main phase, i.e. single phase materials
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/95—Products characterised by their size, e.g. microceramics
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Structural Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Carbon And Carbon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
図1および図2を用いて、本実施例の六方晶ダイヤモンド単相バルク焼結体の製造方法を説明する。まず、厚さ1.5mmの高配向・高結晶性グラファイトのシートを近赤外レーザービームにより、直径2mmの円盤状に切り出す(図1(a))。本実施例では高配向・高結晶性グラファイト原料としてNT-MDT社(ロシア)製の高配向熱分解グラファイト(HOPG)シート(グレードGRAS(ZYA)のもの)を用いた。この高配向熱分解グラファイト(HOPG)シートのモザイクスプレッドは0.4±0.1゜、密度は2.255〜2.265g/cm3である。この高配向熱分解グラファイト(HOPG)シートの切断面のTEM写真および電子線回折像を図1(b)に示す。
上記製造方法により作製された六方晶ダイヤモンド単相バルク焼結体の写真を図6(a)および(b)に示す。図6(a)は光源を斜めから照射して撮影した外観写真であり、(b)は正反射光の方向で撮影した外観の写真である。ダイヤモンド粉末を用いて予備的に機械研磨を行った後の写真であるが、鏡面研磨が可能なほど強固に焼結したバルク焼結体が得られている。
12…カプセル
13…スリーブ
14…断熱材
15…ヒーター
16…断熱材
17a〜17c…圧力媒体
18a、18b…電極
Claims (5)
- モザイクスプレッドが5゜以下の高配向・高結晶性グラファイトに、21GPa以上の圧力下において、1000〜1500℃の範囲内の温度を1〜60minの範囲内の時間付与することを特徴とする六方晶ダイヤモンド単相バルク焼結体の製造方法。
- 前記高配向・高結晶性グラファイトのモザイクスプレッドが1゜以下であることを特徴とする請求項1に記載の六方晶ダイヤモンド単相バルク焼結体の製造方法。
- 前記圧力が22GPa以上であり、加熱温度範囲が1200〜1400℃であることを特徴とする請求項1又は2に記載の六方晶ダイヤモンド単相バルク焼結体の製造方法。
- 前記試料加熱時間範囲が1〜20minであることを特徴とする請求項1〜3のいずれかに記載の六方晶ダイヤモンド単相バルク焼結体の製造方法。
- モザイクスプレッドが5゜以下の高配向・高結晶性グラファイトに、21GPa以上の圧力下において、1000〜1500℃の範囲内の温度を1〜60minの範囲内の時間付与することにより製造されることを特徴とする六方晶ダイヤモンド単相バルク焼結体。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012180427 | 2012-08-16 | ||
JP2012180427 | 2012-08-16 | ||
PCT/JP2013/052768 WO2014027470A1 (ja) | 2012-08-16 | 2013-02-06 | 六方晶ダイヤモンド単相バルク焼結体およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2014027470A1 JPWO2014027470A1 (ja) | 2016-07-25 |
JP6045000B2 true JP6045000B2 (ja) | 2016-12-14 |
Family
ID=50685512
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2014530476A Expired - Fee Related JP6045000B2 (ja) | 2012-08-16 | 2013-02-06 | 六方晶ダイヤモンド単相バルク焼結体およびその製造方法 |
Country Status (3)
Country | Link |
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US (1) | US10167569B2 (ja) |
JP (1) | JP6045000B2 (ja) |
WO (1) | WO2014027470A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102599911B1 (ko) | 2018-10-01 | 2023-11-13 | 스미토모덴키고교가부시키가이샤 | 다이아몬드 다결정체, 다이아몬드 다결정체를 갖춘 공구 및 다이아몬드 다결정체의 제조 방법 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6015325B2 (ja) * | 2012-10-09 | 2016-10-26 | 住友電気工業株式会社 | ダイヤモンド多結晶体およびその製造方法、ならびに工具 |
JP6007732B2 (ja) * | 2012-11-06 | 2016-10-12 | 住友電気工業株式会社 | ダイヤモンド多結晶体およびその製造方法 |
US9945185B2 (en) * | 2014-05-30 | 2018-04-17 | Baker Hughes Incorporated | Methods of forming polycrystalline diamond |
JP7033542B2 (ja) * | 2016-11-11 | 2022-03-10 | 株式会社日進製作所 | 立方晶窒化硼素多結晶体及びその製造方法、並びに切削工具及び研削工具 |
ES2724214B2 (es) * | 2018-03-01 | 2020-01-15 | Business Res And Diamonds S L | Procedimiento para la obtencion de diamantes sinteticos a partir de la sacarosa y equipo para llevar a cabo dicho procedimiento |
GB201809206D0 (en) | 2018-06-05 | 2018-07-25 | Pontificia Univ Catolica Madre Y Maestra Autopista Duarte Km 1 1/2 | Sp3-bonded carbon materials, methods of manufacturing and uses thereof |
CN112892411B (zh) * | 2021-01-25 | 2022-05-31 | 四川大学 | 一种高温高压下生长大颗粒金刚石的方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS63104641A (ja) | 1986-10-23 | 1988-05-10 | Natl Inst For Res In Inorg Mater | 衝撃波加圧法による六方晶ダイヤモンド粉末の合成法 |
JPH0693995B2 (ja) | 1990-07-24 | 1994-11-24 | 住友石炭鉱業株式会社 | ダイヤモンド砥粒の製造方法 |
RU2083272C1 (ru) * | 1995-06-07 | 1997-07-10 | Физический институт им.П.Н.Лебедева РАН | Способ выращивания алмаза из графита |
JP3837486B2 (ja) | 2001-10-11 | 2006-10-25 | 独立行政法人物質・材料研究機構 | 六方晶ダイヤモンド粉末の合成法。 |
JP4275896B2 (ja) | 2002-04-01 | 2009-06-10 | 株式会社テクノネットワーク四国 | ダイヤモンド多結晶体およびその製造方法 |
JP4075771B2 (ja) | 2003-11-04 | 2008-04-16 | ヤマハ株式会社 | 推定装置、自動楽器およびプログラム |
US7687146B1 (en) * | 2004-02-11 | 2010-03-30 | Zyvex Labs, Llc | Simple tool for positional diamond mechanosynthesis, and its method of manufacture |
US8784767B2 (en) | 2010-08-19 | 2014-07-22 | Sumitomo Electric Industries, Ltd. | Polycrystalline diamond and method of manufacturing the same |
GB201204533D0 (en) * | 2012-03-15 | 2012-04-25 | Element Six Ltd | Process for manufacturing synthetic single crystal diamond material |
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2013
- 2013-02-06 JP JP2014530476A patent/JP6045000B2/ja not_active Expired - Fee Related
- 2013-02-06 US US14/421,690 patent/US10167569B2/en not_active Expired - Fee Related
- 2013-02-06 WO PCT/JP2013/052768 patent/WO2014027470A1/ja active Application Filing
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102599911B1 (ko) | 2018-10-01 | 2023-11-13 | 스미토모덴키고교가부시키가이샤 | 다이아몬드 다결정체, 다이아몬드 다결정체를 갖춘 공구 및 다이아몬드 다결정체의 제조 방법 |
Also Published As
Publication number | Publication date |
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US10167569B2 (en) | 2019-01-01 |
US20150292107A1 (en) | 2015-10-15 |
WO2014027470A1 (ja) | 2014-02-20 |
JPWO2014027470A1 (ja) | 2016-07-25 |
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