JP6034588B2 - フォトリソグラフィのための組成物および方法 - Google Patents
フォトリソグラフィのための組成物および方法 Download PDFInfo
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- JP6034588B2 JP6034588B2 JP2012091469A JP2012091469A JP6034588B2 JP 6034588 B2 JP6034588 B2 JP 6034588B2 JP 2012091469 A JP2012091469 A JP 2012091469A JP 2012091469 A JP2012091469 A JP 2012091469A JP 6034588 B2 JP6034588 B2 JP 6034588B2
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- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 238000010511 deprotection reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 description 1
- JVSWJIKNEAIKJW-UHFFFAOYSA-N dimethyl-hexane Natural products CCCCCC(C)C JVSWJIKNEAIKJW-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- WEHWNAOGRSTTBQ-UHFFFAOYSA-N dipropylamine Chemical compound CCCNCCC WEHWNAOGRSTTBQ-UHFFFAOYSA-N 0.000 description 1
- ODQWQRRAPPTVAG-GZTJUZNOSA-N doxepin Chemical compound C1OC2=CC=CC=C2C(=C/CCN(C)C)/C2=CC=CC=C21 ODQWQRRAPPTVAG-GZTJUZNOSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 238000007720 emulsion polymerization reaction Methods 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- UHKJHMOIRYZSTH-UHFFFAOYSA-N ethyl 2-ethoxypropanoate Chemical compound CCOC(C)C(=O)OCC UHKJHMOIRYZSTH-UHFFFAOYSA-N 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 125000003784 fluoroethyl group Chemical group [H]C([H])(F)C([H])([H])* 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 239000003205 fragrance Substances 0.000 description 1
- 238000010528 free radical solution polymerization reaction Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012456 homogeneous solution Substances 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- ZHUXMBYIONRQQX-UHFFFAOYSA-N hydroxidodioxidocarbon(.) Chemical group [O]C(O)=O ZHUXMBYIONRQQX-UHFFFAOYSA-N 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- AQYSYJUIMQTRMV-UHFFFAOYSA-N hypofluorous acid Chemical group FO AQYSYJUIMQTRMV-UHFFFAOYSA-N 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- PHTQWCKDNZKARW-UHFFFAOYSA-N isoamylol Chemical compound CC(C)CCO PHTQWCKDNZKARW-UHFFFAOYSA-N 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 125000001972 isopentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 229940057867 methyl lactate Drugs 0.000 description 1
- 229940017219 methyl propionate Drugs 0.000 description 1
- 125000000325 methylidene group Chemical group [H]C([H])=* 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- SYSQUGFVNFXIIT-UHFFFAOYSA-N n-[4-(1,3-benzoxazol-2-yl)phenyl]-4-nitrobenzenesulfonamide Chemical class C1=CC([N+](=O)[O-])=CC=C1S(=O)(=O)NC1=CC=C(C=2OC3=CC=CC=C3N=2)C=C1 SYSQUGFVNFXIIT-UHFFFAOYSA-N 0.000 description 1
- GNVRJGIVDSQCOP-UHFFFAOYSA-N n-ethyl-n-methylethanamine Chemical compound CCN(C)CC GNVRJGIVDSQCOP-UHFFFAOYSA-N 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 239000002101 nanobubble Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 125000006502 nitrobenzyl group Chemical group 0.000 description 1
- 125000003518 norbornenyl group Chemical class C12(C=CC(CC1)C2)* 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 229920000233 poly(alkylene oxides) Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920002959 polymer blend Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000007761 roller coating Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 229940124530 sulfonamide Drugs 0.000 description 1
- 150000003456 sulfonamides Chemical class 0.000 description 1
- 150000003871 sulfonates Chemical class 0.000 description 1
- 150000003459 sulfonic acid esters Chemical class 0.000 description 1
- 125000000542 sulfonic acid group Chemical group 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229920006029 tetra-polymer Polymers 0.000 description 1
- 150000005622 tetraalkylammonium hydroxides Chemical class 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 150000003918 triazines Chemical class 0.000 description 1
- WLOQLWBIJZDHET-UHFFFAOYSA-N triphenylsulfonium Chemical class C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 WLOQLWBIJZDHET-UHFFFAOYSA-N 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Materials For Photolithography (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
のモノマーの重合単位を含む第1の追加の(additive)ポリマーを含み;前記第1の追加のポリマーはマトリックスポリマーよりも少ない量で組成物中に存在し、前記第1の追加のポリマーはマトリックスポリマーの表面エネルギーよりも低い表面エネルギーを有し、乾燥状態での当該トップコート組成物の層は、75〜85°の水後退接触角を有する。
本発明のトップコート組成物は有利な静的および動的水接触角を示しうる。本発明のトップコート組成物は2種以上の、好ましくは3種以上の異なるポリマーを含む。本発明において有用なポリマーはホモポリマーであってよいが、より典型的には、複数種の異なる繰り返し単位を含み、2種もしくは3種の異なる単位、すなわち、コポリマーもしくはターポリマーが典型的である。このポリマーは、この組成物から形成されるトップコート層が、水性アルカリ現像剤、例えば、第四級アンモニウムヒドロキシド溶液、例えば、テトラメチルアンモニウムヒドロキシド(TMAH)を使用するレジスト現像工程において除去されうるように水性アルカリ可溶性である。
後述の実施例は、本発明のトップコート組成物の典型的な製造を提供する。
様々なフォトレジスト組成物が、本発明のトップコート層組成物および方法と組み合わせて使用されうる。
上述のように、本発明に従って使用するのに典型的なフォトレジストには、ポジ型またはネガ型化学増幅型フォトレジスト、すなわち、1以上の組成物成分の酸不安定基の光酸促進脱保護反応を受け、このレジストの塗膜層の露光領域を、未露光領域よりも水性現像剤中でより可溶性にするポジ型レジスト組成物、並びに、光酸促進架橋反応を受けて、このレジストの塗膜層の露光領域を、未露光領域よりも低い現像剤可溶性にするネガ型レジスト組成物が挙げられる。これらのなかで、ポジ型材料が典型的である。エステルのカルボキシル酸素に共有結合しているターシャリー非環式アルキル炭素(例えば、t−ブチル)またはターシャリー脂環式炭素(例えば、メチルアダマンチル)を含むエステル基は、多くの場合、本発明のリソグラフィーシステムのフォトレジストに使用されるポリマーの好ましい光酸不安定基である。アセタール光酸不安定基も好ましいであろう。
液体フォトレジスト組成物は、例えば、スピンコーティング、ディッピング、ローラーコーティングまたは他の従来のコーティング技術により基体に適用されることができ、スピンコーティングが典型的である。スピンコーティングの場合、コーティング溶液の固形分含有量は、使用される具体的なスピニング装置、溶液の粘度、スピナーの速度およびスピニングされる時間量に基づいて、所望の膜厚を提供するように調節されうる。
次の非限定的な実施例は本発明の例示である。
モノマーA=4,4,4−トリフルオロ−3−ヒドロキシ−1−メチル−3−(トリフルオロメチル)ブチル2−メタクリラート
モノマーB=2{[(トリフルオロメチル)スルホニル]アミノ}エチル2−メタクリラート
9.0gのモノマーA、1.0gのモノマーBおよび17.0gの4−メチル−2−ペンタノール(MIBC)が容器に入れられた。この容器が振とうされて、これら2種類のモノマーを溶解した。次いで、この容器は氷浴中に配置され、温度をこの浴と同じにした。0.3gのVazo(商標)(バゾ)52開始剤(デュポン)がこの容器に添加され、この容器が振とうされて開始剤を溶解し、そしてこの容器が氷浴に戻された。30gの4−メチル−2−ペンタノールが、磁気攪拌棒および加熱制御熱電対を備えた100mlの3ッ口丸底フラスコに入れられ、攪拌しつつ85℃に加熱された。モノマー/開始剤溶液が反応器に4.17μl/秒の供給速度で供給された(〜90分の供給時間)。供給後、反応器温度はさらに2時間の間85℃に維持され、次いで反応器は室温まで自然に冷却された。ポリマー溶液は10.9重量%の濃度および約10gの生成マトリックスポリマーを有していたことが認められた。
モノマーC=1,1,1−トリフルオロ−2−ヒドロキシ−6−メチル−2−(トリフルオロメチル)ヘプタン−4−イルメタクリラート
モノマーD=2−トリフルオロメチルスルホニルアミノ−2−メチルプロピルメタクリラート
モノマーE=2,3,3−トリメチルブチルアクリラート
33.0gのモノマーC、15.0gのモノマーD、12.0gのモノマーEおよび30.0gのプロピレングリコールメチルエーテルアセタート(PGMEA)が容器に入れられた。この容器が振とうされてモノマーを溶解した。次いで、この容器は氷浴中に配置され、温度をこの浴と同じにした。1.80gのVazo(商標)(バゾ)67開始剤(デュポン)がこの容器に添加され、この容器が振とうされて開始剤を溶解し、そしてこの容器が氷浴に戻された。30gのPGMEAが、磁気攪拌棒および加熱制御熱電対を備えた250mlの3ッ口丸底フラスコに入れられ、攪拌しつつ97℃に加熱された。モノマー/開始剤溶液が反応器に19.2μl/秒の供給速度で供給された(〜70分の供給時間)。供給後、反応器温度はさらに2時間の間97℃に維持され、次いで反応器は室温まで自然に冷却された。ポリマー溶液は50.3重量%の濃度および約60gの生成した第1の追加のポリマーを有していたことが認められた。
モノマーB=2{[(トリフルオロメチル)スルホニル]アミノ}エチル2−メタクリラート
モノマーF=2−アクリルアミド−2−メチル−1−プロパンスルホン酸
9.5gのモノマーBおよび10.0gのPGMEAが容器に入れられた。この容器が振とうされてモノマーを溶解した。モノマーFの25重量%水溶液の2.0gがこの容器に添加された。この容器が振とうされて、均質な溶液を得て、次いで、この容器は氷浴中に配置され、温度をこの浴と同じにした。0.15gのVazo(商標)(バゾ)67開始剤(デュポン)がこの容器に添加され、この容器が振とうされて開始剤を溶解し、そしてこの容器が氷浴に戻された。20gのPGMEAが、磁気攪拌棒および加熱制御熱電対を備えた100mlの3ッ口丸底フラスコに入れられ、攪拌しつつ97℃に加熱された。モノマー/開始剤溶液が反応器に4.17μl/秒の供給速度で供給された(〜90分の供給時間)。供給後、反応器温度はさらに1.5時間の間85℃に維持され、次いで反応器は攪拌しつつ室温まで自然に冷却された。次いで、ポリマー溶液はローター蒸発によって濃縮され、DI水中で沈殿させられた。沈殿したポリマーが集められ、45℃で真空乾燥された。この乾燥したポリマーは、次いで、MIBCに溶かされた。約10gの第2の追加のポリマーが得られた。
実施例4
本発明のトップコート組成物が以下の成分を以下の量で混合することにより製造された:
実施例4の組成物が、シリコンウェハ基体上に配置された乾燥フォトレジスト層(Epic(商標)(エピック)2096フォトレジスト、ロームアンドハースエレクトロニックマテリアルズ)上にスピンコートされた。静的(θ静的)、後退(θ後退)、前進(θ前進)および滑落(θ滑落)接触角が測定された。後退接触角および前進接触角は、液滴が滑り落ちる最初のフレームにおける液滴の、それぞれ、後退(すなわち、引きずり)側および前進側でのウェハ表面と、タンジェントラインとの間の角度として測定される。この測定は、KRUSS DSA100Goniomer(ゴニオマー)で、50μlの水滴および1単位/秒のテーブル傾き速度を用いて行われた。50μlのDI水が試験ウェハ表面上に分配された後で、ウェハステージが1単位/秒の速度で傾けられた。この傾けの際に、傾き軸に沿って、少なくとも5フレーム/秒の割合でビデオ映像が撮影された。液滴の最初の動きに対応するテーブルを傾けた角度が「滑落(sliding)角」として定義された。これら結果は以下の表1に示される。
実施例5のコーティング組成物が、Epic(商標)2096フォトレジスト(ロームアンドハースエレクトロニックマテリアルズ)の塗膜層を有するそれぞれのシリコンウェハ上にスピンコートされた。トップコートコーティングされたフォトレジスト層は、193nmの波長を有するパターン化された放射線を用いた液浸リソグラフィーシステムで像形成された。
Claims (10)
- フォトレジストの層上のトップコート層の形成に使用するのに適した組成物であって、
前記組成物が、
水性アルカリ可溶性であるマトリックスポリマーと、
水性アルカリ可溶性であって、かつ下記一般式(I):
のモノマーの重合単位を含む第1の追加のポリマーとを含み、
前記第1の追加のポリマーがマトリックスポリマーよりも少ない量で組成物中に存在し、
前記第1の追加のポリマーがマトリックスポリマーの表面エネルギーよりも低い表面エネルギーを有し、
乾燥状態でのトップコート組成物の層が75〜85°の水後退接触角を有する、
組成物。 - 前記第1の追加のポリマーが前記一般式(II)および(III)のモノマーの重合単位を含む請求項2に記載の組成物。
- 前記マトリックスポリマーが1種以上のフッ素化基を含む請求項1〜3のいずれか1項に記載の組成物。
- 1種以上の強酸基を含む第2の追加のポリマーをさらに含む、請求項1〜4のいずれか1項に記載の組成物。
- アルコール;アルキルエーテルおよび/またはアルカン;並びにジアルキレングリコールモノアルキルエーテル;の混合物を含む溶媒系をさらに含む、請求項1〜5のいずれか1項に記載の組成物。
- 基体上のフォトレジスト層、および
前記フォトレジスト層上の、請求項1〜6のいずれか1項に記載の組成物を含むトップコート層、
を含むコーティングされた基体。 - (a)フォトレジスト組成物を基体上に適用してフォトレジスト層を形成し、
(b)請求項1〜6のいずれか1項に記載の組成物を前記フォトレジスト層上に適用してトップコート層を形成し、並びに
(c)前記トップコート層および前記フォトレジスト層を化学線に露光する
ことを含む、フォトレジスト組成物を処理する方法。 - 露光が液浸露光であり、かつ基体が半導体ウェハである請求項8に記載の方法。
- トップコート層が自己分離される、請求項8または9に記載の方法。
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