JP6029385B2 - Probe unit and inspection device - Google Patents

Description

  The present invention relates to a probe unit and an inspection apparatus, and more particularly to a probe unit having a plurality of contact pins and an inspection apparatus.

  Probes are used for inspection of semiconductor devices and the like. Further, a probe for a power semiconductor element such as an IGBT needs to supply a large current. For example, Patent Document 1 discloses a probe unit for supplying a large current. In the probe unit of Patent Document 1, a probe holder and a plunger holder are used. The probe holder holds a plurality of probes, and the plunger holder holds a plurality of plungers.

JP 2012-68076 A

  In the probe unit of Patent Document 1, when one plunger fails, it is necessary to remove the plunger holder and the probe holder. Then, it is necessary to remove the failed plunger from the plunger holder and newly attach the plunger to which the electric wire is connected. Therefore, there is a problem that the plunger replacement operation becomes complicated and the maintainability deteriorates.

  The present invention has been made in view of the above-described problems, and an object thereof is to provide a probe unit and an inspection apparatus with high maintainability.

  A probe unit according to an aspect of the present invention includes a main body, a plurality of bases detachably provided on the main body, the plurality of bases arranged so that side surfaces face each other, and the base A plurality of plungers that are integrally formed and extend downward, a plurality of contact pins that are provided corresponding to the plurality of plungers, and that are electrically connected to the plungers, and bias the contact pins that are in contact with the test object And an urging member. By doing in this way, since exchange for every base is attained, maintainability can be improved.

  In the probe unit described above, the side surfaces of the adjacent bases may be in contact with each other so that the adjacent bases are electrically connected. In this way, a plurality of probes can be easily conducted.

  In the above probe unit, through holes may be provided in the plurality of bases, and the plurality of bases may be fixed to the main body portion by inserting a fixing member into the through holes of the plurality of bases. Thereby, since a plurality of bases can be simply fixed, they can be easily detached. Therefore, maintainability can be improved.

  In the probe unit, the urging member may be a spring, and the contact pin and the plunger may be inserted into the spring. Thereby, the probe can be configured with a simple configuration.

  In the above probe unit, the adjacent bases may be insulated by interposing an insulator between the plurality of adjacent bases. Thereby, different electrical signals and power supply voltages can be supplied to the inspection object.

  An inspection apparatus according to the present invention includes the above-described probe unit. Thereby, maintainability can be improved.

  As described above, according to the present invention, it is possible to provide a probe unit and an inspection apparatus with high maintainability.

It is a front fragmentary sectional view which shows the structure of the inspection apparatus which concerns on this Embodiment. It is a top view which shows the structure of the inspection apparatus which concerns on this Embodiment. It is an enlarged front view which shows a chuck | zipper stage and its peripheral part. FIG. 4 is a plan view of FIG. 3. It is a front view which shows the relationship between the probe for surface electrodes, the probe for back surface electrodes, and a chuck | zipper stage. FIG. 6 is a plan view of FIG. 5. It is a perspective view which shows the structure of the probe unit concerning this Embodiment. It is a disassembled perspective view which shows the structure of the probe unit concerning this Embodiment. It is a disassembled perspective view which shows the structure of a probe. It is a front view which shows the structure of a probe. It is a plane sectional view showing the composition of a probe. It is a front view for demonstrating the contact point of the probe unit concerning this Embodiment. It is a front view for demonstrating the contact point of the probe unit concerning a comparative example. It is a top view which shows typically the structure of the modification 1 which insulated the base 41. FIG. It is a top view which shows typically the probe arrangement | positioning of the modification 2. FIG. It is a top view which shows typically the probe arrangement | positioning of the modification 3. FIG.

(Inspection equipment)
Embodiments of the present invention will be described below with reference to the drawings. An overall configuration of an inspection apparatus using a probe unit in this embodiment will be described. In the following description, an IGBT (Integrated Gate Bipolar Transistor), which is one of power semiconductor devices, will be described as an example of an inspection target of the inspection apparatus according to the present embodiment. It is not particularly limited. For example, a semiconductor device other than an IGBT can be an inspection target. Further, the inspection apparatus according to the present embodiment is not limited to the illustrated configuration.

  FIG. 1 is a front partial sectional view showing an example of an inspection apparatus, and FIG. 2 is a plan view thereof. The inspection apparatus 1 includes a chuck stage 2, an insulating plate 3, a heat insulating plate 4, an xyz-θ stage 5, a manipulator 6, a manipulator 7, a tester 8, a wafer cassette 9, a wafer transfer device 10, an upper base plate 11, and a force conductive member. 13 and conductive cables 14A and 14B.

  The insulating plate 3 is placed and held on the heat insulating plate 4. The chuck stage 2 is placed and held on the insulating plate 3. A heater described later is interposed between the insulating plate 3 and the heat insulating plate 4. The xyz-θ stage 5 moves the chuck stage 2 in the XYZ direction and the θ direction together with the insulating plate 3 and the heat insulating plate 4. The manipulator 6 holds the surface electrode probe and moves it in a small range in the XYZ directions. The manipulator 7 holds the back electrode probe and moves it in the XYZ direction within a minute range.

  In the present embodiment, the inspection target is the wafer W before the semiconductor chip is diced. Accordingly, a plurality of semiconductor chips before dicing are formed on the wafer W to be inspected. The inspection apparatus 1 sequentially inspects a plurality of semiconductor chips provided on the wafer W. The wafer W is stored in the wafer cassette 9. The wafer transfer device 10 takes out the wafer W from the wafer cassette 9 and places it on the wafer holder on the chuck stage 2. Further, the wafer conveyance device 10 carries out the wafer W, which has been inspected, from the wafer holding unit to the outside. The mechanism by which the wafer transfer apparatus 10 transfers the wafer W is not particularly limited. For example, a Bernoulli-type wafer transfer device can be used as the wafer transfer device 10.

  The upper base plate 11 is disposed above the chuck stage 2. The upper base plate 11 is provided with an oval hole 12. The manipulator 6 and the manipulator 7 are attached in the vicinity of the edge of the hole 12. Each of the manipulator 6 and the manipulator 7 has a cantilever-type arm and a holding portion protruding downward from the tip of the arm through the hole 12. The manipulator 6 and the manipulator 7 hold the front surface electrode probe and the back surface electrode probe at a position below the upper base plate 11. The front electrode probe and the back electrode probe can be moved in the XYZ directions by a manipulator 6 and a manipulator 7, respectively.

  The surface electrode probe is connected to the tester 8 via the force conductive member 13 and the conductive cable 14A. The back electrode probe is connected to the tester 8 via the conductive cable 14B. The inspection apparatus 1 includes a microscope and an imaging device (not shown) for alignment in addition to the above members.

  FIG. 3 is an enlarged front view showing only the peripheral portion outside the chuck stage. As shown in FIG. 3, a heater 15 is disposed between the insulating plate 3 and the heat insulating plate 4. Electric power is supplied to the heater 15 from an electric power source (not shown). As a result, the heater 15 heats the chuck stage 2 and the wafer W placed on the wafer holding portion of the chuck stage 2. A temperature sensor (not shown) is attached to the wafer holder. And the electric power supplied to the heater 15 is adjusted based on the signal from a temperature sensor. By doing so, the chuck stage 2 and the wafer W placed on the wafer holder can be heated to a predetermined temperature.

  FIG. 4 is a plan view of FIG. As shown in FIG. 4, a wafer holding part α and a probe contact region β are provided on the upper surface of the chuck stage 2. The wafer holding portion α and the probe contact region β are arranged adjacent to each other so as not to overlap each other. The wafer holding part α is provided with a suction mechanism (not shown) such as a suction groove connected to a negative pressure source. Thus, the wafer holding unit α sucks and holds the wafer W in a state where the upper surface thereof is in contact with the back surface of the wafer W.

  There is no particular limitation on the size of the wafer holding portion α, and any size that can hold the largest wafer W scheduled to be inspected by the inspection apparatus 1 may be used. Further, since the wafer W to be inspected is usually circular, the shape of the wafer holding portion α is circular according to the shape of the wafer W. However, as long as the wafer W can be held, the shape is not limited to circular. , Oval, oval, polygonal shape.

  The chuck stage 2 is made of a conductive material such as copper subjected to rust prevention plating. Since a part of the upper surface of the chuck stage 2 constitutes the wafer holding part α, the upper surface of the wafer holding part α is also conductive. Therefore, when the wafer W is placed on the wafer holding portion α, the conductive upper surface of the wafer holding portion α comes into contact with the back surface of the wafer W, and the portion of the wafer holding portion α that comes into contact with the back surface of the wafer W It becomes a conductive contact portion.

  On the other hand, the probe contact region β is a region where a back electrode probe to be described later contacts. The probe contact region β is provided on the upper surface of the chuck stage 2 adjacent to the wafer holding portion α, and a part of the upper surface of the chuck stage 2 constitutes the probe contact region β. Since the chuck stage 2 is made of a conductive material such as copper subjected to rust-proof plating, the probe contact region β is conductive. Accordingly, the probe contact region β is electrically connected to the contact portion in the wafer holding portion α through the portion other than the wafer holding portion α and the probe contact region β in the chuck stage 2.

  The size of the probe contact region β is selected so as to include a region having the same shape and the same size as the largest wafer W held by the wafer holding portion α. In this example, it is assumed that the wafer W held by the wafer holding part α is circular and the diameter does not exceed the diameter of the wafer holding part α even at the maximum. Therefore, the probe contact region β is set as a circular region having the same radius as the wafer holding portion α. However, the shape of the probe contact region β is not limited to a circle, and may be any shape such as an ellipse, an oval, or a polygon as long as it includes a region that is the same shape and the same size as the largest possible wafer W. . In addition, the size of the probe contact region β only needs to include a region having the same shape and the same size as the largest wafer W held by the wafer holding portion α. In an extreme case, the area may be the same shape and the same size as the largest wafer W held by the wafer holder α, but the area has a larger area than the largest wafer W held by the wafer holder α. Is preferably set as aβ.

  In this example, the conductive upper surface of the chuck stage 2 constitutes both the wafer holding part α and the probe contact region β, but is held by the wafer holding part α on the upper surface of the chuck stage 2. A conductive sheet having the same size and the same shape as the largest wafer W may be placed, and the upper surface of the conductive sheet may be used as the probe contact region β. As described above, when the conductive sheet is used as the probe contact region β, when the probe contact region is damaged due to the back surface electrode probe being contacted many times, it is only necessary to replace the conductive sheet. , Maintenance effort and cost can be reduced.

  Further, as shown in the figure, the chuck stage 2 is on the xyz-θ stage 5. Since the wafer holding portion α and the probe contact region β on the upper surface of the chuck stage 2 are formed, when the xyz-θ stage 5 is operated to move the chuck stage 2, the wafer holding portion α and the probe contact region β are moved. Move together in the same direction.

FIG. 5 is a front view showing the relationship between the front surface electrode probe and the back surface electrode probe and the chuck stage 2, and FIG. 6 is a plan view thereof. For convenience, only members necessary for explanation are extracted and illustrated. Surface electrode probe P _A and probe P _B for the back electrode has a plurality of probes for force, not shown, respectively, a sense probe a plurality of, a. Although the number of force probes may be one, it is preferable to have a plurality of force probes because it is necessary to pass a large current when inspecting a power semiconductor device. Similarly, the number of sensing probes may be one, but a plurality of sensing probes is preferable because a continuity check can be performed. Incidentally, the probe P _A for surface electrodes, depending on the type of semiconductor device to be tested, usually, in addition to probe and sense probe for the force, a gate probe and the base probe (not shown) Yes.

The surface electrode probe P _A and probe P _B for the back electrode are arranged at a distance D from each other in the horizontal direction. When chuck stage 2 is raised by xyz-theta stage 5, the probe P _A is for surface electrodes, in contact with the wafer W held by the wafer holding unit alpha, probe P _B for the back electrode is in contact with the probe contact region β Placed in position. Further, the force for the conductive member 13 is arranged parallel to the upper surface of the chuck stage 2 along the line connecting the probe P _B probe P _A and the back electrode for surface electrodes. In this example, the force for the conductive member 13 is a plate-shaped conductive member having rigidity, one end of the surface electrode probe P _A side plural force probes and electricity having a surface electrode for probe P _A The other end is connected to the tester 8 via the conductive cable 14A. Incidentally, the probe P _B for the back electrode is connected to the tester 8 via a conductive cable 14B.

L shown in FIG. 6 is a distance between the centers of the wafer holding portion α and the probe contact region β. In this example, the distance D is set to be substantially the same as the distance L. Thus, the distance D is set to be substantially the same as the distance L. In addition, the probe contact region β has a size including the same shape and the same size as the largest wafer W held by the wafer holding portion α. Thus, the chuck stage 2 is moved by the xyz-theta stage 5, the surface electrode probe P _A is relatively moved within the wafer W held on the wafer holding unit alpha, probe P _B for the back electrode probe contact Move relatively in the region β. Then, the inspection in a state in which the probe for surface electrodes P _A and the probes P _B for the back electrode is separated by a predetermined distance D is performed.

Even when moving the chuck stage 2 by xyz-theta stage 5 to sequentially be tested a number of semiconductor devices formed on the wafer W, the surface electrode probe P _A is in contact with the surface electrode of a semiconductor device sometimes, in contact with the probe contact region β which the probe P _B is for the back electrode to the back electrode and the electrically conducting semiconductor devices. It is possible to supply a necessary electrical signal to the semiconductor device and inspect its electrical characteristics in a wafer state. The surface electrode probe P _A and probe P _B for the back electrode, so no need to move the position relationship between the tester 8 and the surface electrode probe P _A and probe P _B for the back electrode is unchanged. Even when the examination of this for semiconductor devices performed while the wafer state, the tester 8 and the surface electrode for probe P _A, and always constant and the length of the electrical connection path between the probe P _B tester 8 and the back electrode The shortest length can be maintained. Therefore, it is possible to minimize the parasitic inductance generated in the measurement path, and to obtain an advantage that a transient characteristic necessary for a large current measurement or a dynamic characteristic test close to the actual value of the semiconductor device can be obtained. Further, the current flowing through the force conductive member 13 and the current flowing through the chuck stage 2 are parallel in opposite directions. Therefore, the magnetic field generated is canceled, it is possible to reduce the effective inductance in the current path between the surface electrode probe P _A and the back electrode probe P _B, more good transient characteristics, allowing accurate measurement .

(Probe unit)
Next, the configuration of the probe unit, which is one of the characteristic parts of the present embodiment, will be described with reference to FIGS. FIG. 7 is a perspective view showing the overall configuration of the probe unit. FIG. 8 is an exploded perspective view showing the configuration of the probe unit. In the following description, the probe unit 30 is, for example, be described as a probe unit for use in force for the probe of the surface electrode probe P _A. Of course, the electrical signal and power supply voltage supplied by the probe unit 30 are not particularly limited.

  The probe unit 30 includes a main body 31, a base 41, a probe 33, and a bolt 32. A base 41 is fixed to the main body 31 with bolts 32. The main body 31 is attached to the manipulator 6. Further, a probe 33 is provided below the base 41.

  As shown in FIG. 8, the base 41 is detachably provided on the main body 31. The base 41 is a plate-like member, and here is a conductive metal plate. For example, a Ni alloy or a pure Ni metal plate can be used as the base 41, but the material is not particularly limited. When flowing a large current of several tens of A or more, it is preferable to use a low-resistance material. One base 41 is provided with a plurality of probes 33. A plurality of bases 41 are attached to the main body 31. In addition, although illustration is abbreviate | omitted, the hole for flowing the gas for cooling is provided in the main-body part 31, for example, and the base 41 is cooled from upper direction.

  The plurality of bases 41 are metal plates having substantially the same size and shape, and have holes 42 for inserting the bolts 32 at substantially the same position. The hole 42 provided on the side surface of the base 41 is a through hole that penetrates the base 41. Therefore, in a state where the side surfaces of the plurality of bases 41 are arranged so as to face each other, the holes 42 of the plurality of bases 41 overlap. Bolts 32 are inserted into the holes 42 of the plurality of bases 41. Then, when the bolt 32 is screwed into a screw hole (not shown) of the main body 31, the plurality of bases 41 are fixed to the main body 31. The base 41 is stored in the main body 31. A plurality of bases 41 are overlaid. Since the side surfaces of the plurality of bases 41 are in contact with each other, the plurality of bases 41 are conducted.

  In this manner, the bolts 32 are inserted into the holes 42 of the plurality of bases 41 in a state where the side surfaces of the plurality of bases 41 are arranged side by side so as to face each other. By doing so, the plurality of bases 41 can be easily fixed. When removing the base 41, the bolt 32 is removed from the main body 31. By doing so, the plurality of bases 41 can be easily detached from the main body 31. In this configuration, each base 41 can be exchanged individually. 7 and 8, the base 41 is fixed with two bolts 32, but the number and arrangement of the bolts 32 are not particularly limited. Further, the plurality of bases 41 may be fixed by fixing means other than the bolts 32.

  A plurality of probes 33 are arranged in a row below each base 41. In FIG. 8, five bases 41 are shown, and five probes 33 are provided on each base 41. Of course, the number of bases 41 and probes 33 is not limited to the illustrated configuration. A plurality of probes 33 are arranged at equal intervals. The entire probe unit 30 has a configuration in which a plurality of probes 33 are arranged in an array. Moreover, since each of the plurality of bases 41 is provided with a conductive material, the plurality of bases 41 are electrically connected. Therefore, the same electrical signal and power supply voltage can be supplied to the plurality of probes 33 provided on the plurality of bases 41. Therefore, the probe unit 30 is suitable for an inspection in which a large current is passed through the inspection target device.

(Probe configuration)
Hereinafter, the configuration of the probe 33 provided below the base 41 will be described with reference to FIGS. FIG. 9 is an exploded perspective view showing the configuration of the probe 33 provided below the base 41. FIG. 10 is a front view showing the configuration of the probe 33, and FIG. 11 is a horizontal sectional view showing the configuration of the probe 33. In FIGS. 9 to 11, a part of the configuration is simplified for the sake of simplicity. For example, FIG. 9 differs from FIG. 8 in the number of probes 33 provided for one base 41 from the configuration shown in FIG. 10 and 11, the configuration of the base 41 is omitted.

  As shown in FIG. 9, the probe 33 includes a plunger 40, a spring 50, and a contact pin 60. The plunger 40 extends downward from the lower surface of the base 41. An attachment portion 46 for attaching the cable 34 is provided on the upper surface of the base 41. A cable 34 for supplying an electrical signal and a power supply voltage to the mounting portion 46 is connected. A test electrical signal and a power supply voltage from the tester 8 are supplied to the base 41 via the cable 34.

  The plunger 40 has a receiving seat 44 and a tip portion 45. The receiving seat 44 is formed wider than the distal end portion 45. The receiving seat 44 is disposed above the tip portion 45. The contact pin 60 has a contact portion 61, a holding portion 62, and a receiving seat 63. The receiving seat 63 is formed wider than the holding portion 62. The contact portion 61 is a portion that contacts the electrode pad 71 of the semiconductor device. A receiving seat 63 is provided on the contact portion 61, and a holding portion 62 is provided on the receiving seat 63. A spring 50 is provided between the plunger 40 and the contact pin 60. The spring 50 is a compression coil spring.

  The outer diameters of the distal end portion 45 and the holding portion 62 are less than or equal to the inner diameter of the spring 50. Accordingly, the distal end portion 45 and the holding portion 62 are inserted into the spring 50. The outer diameters of the receiving seat 44 and the receiving seat 63 are larger than the inner diameter of the spring 50. Therefore, the upper end of the spring 50 is in contact with the receiving seat 44 and the lower end is in contact with the receiving seat 63. That is, the spring 50 is held between the receiving seat 44 and the receiving seat 63. When the tip of the contact portion 61 comes into contact with the electrode pad 71, the contact pin 60 is pushed upward. As a result, the spring 50 contracts and biases the contact pin 60 downward. Thereby, the contact part 61 can be made to contact the electrode pad 71 reliably. Since the tip of the contact portion 61 is sharp, the contact portion 61 penetrates the surface oxide film formed on the surface of the electrode pad 71 and contacts the electrode pad 71. Thereby, the contact part 61 can be reliably conducted to the electrode pad 71.

  The holding portion 62 is formed to be branched into two from the receiving seat 63 so as to sandwich the tip portion 45. As shown in FIGS. 10 and 11, the plunger 40 holds the contact pin 60 by the two holding portions 62 sandwiching the tip portion 45. Further, a spring 50 is disposed on the outer periphery of the holding portion 62 with the tip 45 sandwiched therebetween, and the spring 50 presses the holding portion 62 from the outer periphery. Thereby, since the front-end | tip part 45 is hold | maintained between the two holding | maintenance parts 62, it can prevent that the contact pin 60 falls off from the plunger 40. FIG.

  The plunger 40 is formed integrally with the base 41. Therefore, the plunger 40 is formed of a metal material. The spring 50 and the contact pin 60 are also formed of a metal material. The plunger 40, the contact pin 60, and the spring 50 are in contact with each other. Thereby, the plunger 40 is electrically connected to the contact pin 60. A plurality of plungers 40 extend downward from one base 41. Further, since the spring 50 presses the holding portion 62 against the tip portion 45, the plunger 40 and the contact pin 60 can be reliably conducted.

  As described above, the side surfaces of adjacent bases 41 are in contact with each other and are conductive. Therefore, all of the probes 33 provided on the plurality of bases 41 are conducted. For example, in the configuration shown in FIG. 8, 5 × 5 probes 33 are conducted through the base 41. Therefore, the same electrical signal and power supply voltage can be supplied to the plurality of probes 33. Furthermore, if the attachment portion 46 is provided in at least one of the plurality of bases 41 and the cable 34 is connected, the same electrical signal and power supply voltage can be supplied to all the probes 33. Therefore, the plurality of bases 41 can be easily attached to the main body 31. Of course, it is also possible to connect the cable 34 by providing the mounting portions 46 on the two or more bases 41.

  According to the probe unit 30 according to the present embodiment, only a part of the bases 41 can be exchanged, so that maintainability can be improved. For example, the base 41 having the failed probe 33 may be replaced individually. Furthermore, since the adjacent bases 41 are in contact with each other and connected, even when a part of the bases 41 is replaced, the attachment of the cable 34 and the like can be omitted. As a result, the failed probe 33 can be easily replaced, and maintainability can be improved.

  Further, in the present embodiment, the plunger 40 is configured to extend downward from the base 41. The base 41 and the plunger 40 are integrally formed. For example, the plunger 40 and the base 41 are integrally formed by processing one metal plate. Thus, by forming the base 41 and the plunger 40 integrally, it is possible to prevent the resistance from being deteriorated. Thereby, favorable electrical characteristics can be obtained. Furthermore, since the number of contact points can be reduced, the member is not easily damaged by the contact load. Thereby, the lifetime of the probe unit 30 can be extended.

  As shown in FIG. 12, when the probe 33 is in contact with the electrode pad 71, a contact point is between the contact portion 61 and the electrode pad 71. A contact point is also formed between the plunger 40 and the contact pin 60. Moreover, since the adjacent base 41 can be contacted in the whole side surface, a favorable electrical characteristic can be acquired.

  On the other hand, as shown in the comparative example of FIG. 13, when the base 41 and the probe 33 are formed separately without extending the plunger 40 from the base 41, the base 41 and the probe 33 are also contact points. (Location A in FIG. 13). Therefore, there is a risk that the resistance will deteriorate as the number of contact points increases. Further, the member may be damaged by the contact load. On the other hand, since the probe according to the present embodiment has fewer contact points than the comparative example of FIG. 13, good electrical characteristics can be obtained. Furthermore, since the damage at the contact point can be prevented, the life of the probe unit 30 can be extended. In FIGS. 12 and 13, a configuration in which one probe 33 is provided on one base 41 is illustrated for the sake of simplification of description.

(Modification 1)
In the above description, all of the plurality of bases 41 are made conductive, but some of the bases 41 can be insulated from the other bases 41. In this way, different electrical signals and power supply voltages can be supplied to the plurality of probes 33. Therefore, it is possible to supply different electric signals and power supply voltages to the plurality of electrode pads 71. For example, as shown in FIG. 14, by disposing an insulator 47 between the bases 41, the adjacent bases 41 can be insulated. The insulator 47 is an insulating sheet or an insulating plate.

  FIG. 14 is a plan view schematically showing a configuration when the base 41 is insulated. In FIG. 14, two conductive paths are formed by interposing an insulator 47 between the base 41a and the base 41b. That is, the insulator 47 is disposed between the base 41a and the base 41b, and the base 41 and the insulator 47 are arranged side by side. In this configuration, a through hole similar to the hole 42 is provided in the insulator 47 and the bolt 32 is inserted. In this way, the bolt 32 fixes the plurality of bases 41 together with the insulator 47 to the main body 31. By attaching the cables 34 to the base 41a and the base 41b separated by the insulator 47, it becomes possible to supply different electric signals and power supply voltages.

  In the above description, the insulator 47 is disposed between the two bases 41a and 41b. However, the insulator 47 may be provided by insulatingly covering the side surface of the base 41. It is also possible to provide a plurality of insulators 47 and provide three or more conductive paths. The position and number of the insulators 47 may be determined according to the size, shape, number, and arrangement of the electrode pads 71 of the device to be inspected.

(Modification 2)
Further, the arrangement and number of the probes 33 can be appropriately changed according to the shape and arrangement of the electrode pads 71. For example, when the shape of the electrode pad 71 is not rectangular, the probes 33 are irregularly arranged according to the shape of the electrode pad 71. This configuration example will be described with reference to FIG. FIG. 15 is a plan view schematically showing the arrangement of the electrode pads 71 and the probes 33.

  In FIG. 15, the outer shape of the electrode pad 71 is not rectangular but has a concave shape. Therefore, the probe 33 is thinned out at a place where the electrode pad 71 does not exist. That is, the base 41c is provided with two probes 33, and the other base 41 is provided with three probes 33. By doing so, the probe 33 can be prevented from coming into contact with the outside of the electrode pad 71.

  Thus, the number of probes 33 in the base 41c is different from the number of probes 33 in the other base 41. Further, in the base 41c, the pitch of the probes 33 is different from the pitch of the probes 33 in the other base 41. Yes. Thus, the arrangement and number of probes 33 in the plurality of bases 41 can be changed as appropriate. By doing so, it is possible to deal with electrode pads 71 having various shapes. Of course, it is possible to deal with electrode pads 71 other than a concave shape or a rectangular shape. That is, by preparing various bases 41 according to the shape of the electrode pad 71, it becomes possible to deal with electrode pads 71 having different shapes.

(Modification 3)
A structural example for supplying an electric signal and a power supply voltage to the source and gate of a transistor will be described with reference to FIGS. FIG. 16 is a plan view schematically showing the arrangement of the electrode pads 71 and the base 41. In FIG. 16, the electrode pad 71 for gate is shown as an electrode pad 71g, and the electrode pad 71 for source is shown as an electrode pad 71s. The external shape of the source electrode pad 71s is concave as in FIG. 15, and the gate electrode pad 71g is arranged in the concave portion.

  A probe 33g that comes into contact with the electrode pad 71g is provided on the base 41g. The probe 33s that comes into contact with the electrode pad 71s is provided on the base 41s. In FIG. 16, four bases 41s and one base 41g are provided. An insulator 47 is interposed between the base 41s and the base 41g. By doing so, the probe 33g of the base 41g and the probe 33s of the base 41s are insulated. Then, the cables 34 are attached to the base 41s and the base 41g, respectively. By doing so, different electrical signals and power supply voltages can be supplied to the electrode pad 71s and the electrode pad 71g for inspection.

  Furthermore, one probe 33g is provided on the base 41g. Each of the bases 41s is provided with three probes 33s. A large number of probes 33 s can be provided on the electrode pad 71 s for a source electrode that supplies a large current.

  Thus, the arrangement and number of probes 33 can be adjusted according to the number, shape, size, and arrangement of the electrode pads 71. Further, the position and number of the insulators 47 can be changed. Of course, it is also possible to supply electric signals and power supply voltages to the electrode pads 71 other than the source and gate. Thus, the arrangement of the probes 33 can be changed as appropriate according to the electrode pads 71 of the device to be inspected.

  The number of probes 33 provided on each base 41 is not particularly limited. Further, in one base 41, the probes 33 may be arranged in two or more rows. Furthermore, you may use the base 41 of different thickness. Further, it is preferable to prepare various bases 41 according to the shape and size of the electrode pad 71. In this way, even when the specification of the device to be inspected is changed, it is possible to easily cope with the change. For example, the pitch and number of the probes 33 can be changed, and the thickness of the base 41 can be changed. Of course, the arrangement and number of the illustrated base 41 and the probe 33 are merely examples, and are not limited to the illustrated configuration. When supplying a large current to the electrode pad 71 via the probe 33, the main body 31 may be provided with cooling fins, or the main body 31 may be cooled with cooling gas or cooling water.

DESCRIPTION OF SYMBOLS 1 Inspection apparatus 2 Chuck stage 3 Insulating board 4 Insulating board 5 xyz-theta stage 6 Manipulator 7 Manipulator 8 Tester 9 Wafer cassette 10 Wafer transfer apparatus 11 Upper base plate 12 Hole 13 Conductive member 14A Conductive cable 14B Conductive cable 15 Heater 30 Probe unit 31 Body portion 32 Bolt 33 Probe 40 Plunger 41 Base 42 Bolt hole 43 Plunger 44 Receiving seat 45 Tip portion 46 Mounting portion 47 Insulator 50 Spring 60 Contact pin 61 Contact portion 62 Holding portion 63 Receiving seat 71 Electrode pad α Wafer holder β Probe contact area W Wafer P _A Front electrode probe P _B Back electrode probe

Claims (5)

The main body,
A plurality of bases that are formed of a metal plate and are detachably provided on the main body part, and a plurality of bases that are arranged so that side surfaces thereof face each other;
A plurality of plungers integrally formed with the base, extending downward and supplied with the same electrical signal or the same voltage ;
A plurality of contact pins provided corresponding to the plurality of plungers and electrically connected to the plungers;
A biasing member that biases the contact pin in contact with the test object ,
The biasing member is a spring;
A probe unit in which the contact pin and the plunger are inserted into the spring .   The probe unit according to claim 1, wherein the adjacent bases are electrically connected to each other by contacting the side surfaces of the adjacent bases.   The probe according to claim 1, wherein the plurality of bases are provided with through holes, and the plurality of bases are fixed to the main body portion by inserting a fixing member into the through holes of the plurality of bases. unit. Has three or more of said base, at least one in that the insulator is interposed claim wherein the base adjacent to each other across the insulator is insulated between neighboring previous Kibe over scan 1 The probe unit according to any one of to 3 . Inspection apparatus including a probe unit according to any one of claims 1-4.

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