JP6024766B2 - Semiconductor module - Google Patents

Semiconductor module Download PDF

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JP6024766B2
JP6024766B2 JP2014560668A JP2014560668A JP6024766B2 JP 6024766 B2 JP6024766 B2 JP 6024766B2 JP 2014560668 A JP2014560668 A JP 2014560668A JP 2014560668 A JP2014560668 A JP 2014560668A JP 6024766 B2 JP6024766 B2 JP 6024766B2
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adhesive layer
semiconductor element
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substrate
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JPWO2014122892A1 (en
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藤田　淳
藤田　　淳
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3178—Coating or filling in grooves made in the semiconductor body
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
    • H01L2224/26122—Auxiliary members for layer connectors, e.g. spacers being formed on the semiconductor or solid-state body to be connected
    • H01L2224/26145—Flow barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/27011—Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature
    • H01L2224/27013—Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature for holding or confining the layer connector, e.g. solder flow barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H01L2224/331—Disposition
    • H01L2224/3318—Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H01L2224/33181—On opposite sides of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3185—Partial encapsulation or coating the coating covering also the sidewalls of the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1027—IV
    • H01L2924/10272—Silicon Carbide [SiC]

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
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  • Power Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
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Description

この発明は、エポキシ樹脂等でトランスファーモールド成形する半導体モジュールにおける、素子と封止樹脂の接着力向上に関するものである。   The present invention relates to an improvement in the adhesion between an element and a sealing resin in a semiconductor module formed by transfer molding using an epoxy resin or the like.

従来の半導体モジュールにおいては、半導体材料の一つであるＳｉＣ（Ｓｉｌｉｃｏｎ Ｃａｒｂｉｄｅ）で半導体素子を形成した場合、トランスファーモールドで使用するエポキシ樹脂等の封止樹脂が直接半導体素子に接していた（例えば、特許文献１参照）。   In a conventional semiconductor module, when a semiconductor element is formed of SiC (Silicon Carbide) which is one of semiconductor materials, a sealing resin such as an epoxy resin used for transfer molding is in direct contact with the semiconductor element (for example, Patent Document 1).

一方、ＳｉＣ膜はダイヤモンドライクカーボン（ＤＬＣ）との接着性が優れるので、タングステンカーボン（ＷＣ）系基材を用いる場合、接着力改善のために、そのＷＣ基材上にＳｉＣ膜等の接着層を形成してから、ＤＬＣ膜を成膜する方法が広く採用されていた（例えば、特許文献２参照）。   On the other hand, since the SiC film has excellent adhesion to diamond-like carbon (DLC), when a tungsten carbon (WC) base material is used, an adhesive layer such as an SiC film is formed on the WC base material in order to improve the adhesive strength. After forming the film, a method of forming a DLC film has been widely adopted (see, for example, Patent Document 2).

特公平６−８０７４８号公報（第２頁、第１図）Japanese Patent Publication No. 6-80748 (2nd page, Fig. 1) 特開２００４−３５３５９号公報（第２頁）JP 2004-35359 A (second page)

従来の半導体モジュールでは、半導体素子を作り込む材料がＳｉＣやＧａＮ（Ｇａｌｌｉｕｍ ｎｉｔｒｉｄｅ）のようなワイドバンドギャップ半導体材料の場合、これらＳｉＣやＧａＮとエポキシ樹脂との接着力が、Ｓｉとエポキシ樹脂との接着力と比較して、相対的に弱いために、実使用時の温度履歴を模擬したヒートサイクル試験（−４０℃〜１５０℃、２６００サイクル）や、素子の高温動作状態を模擬したパワーサイクル試験（Ｔｊ＝８５〜１７５℃、２５０ｋサイクル）において、半導体素子と封止材料であるエポキシ樹脂とが素子端部から剥離するという問題点があった。   In the conventional semiconductor module, when the material for forming the semiconductor element is a wide band gap semiconductor material such as SiC or GaN (Gallium nitride), the adhesive force between the SiC or GaN and the epoxy resin is Since it is relatively weak compared to the adhesive strength, heat cycle test (-40 ° C to 150 ° C, 2600 cycles) that simulates the temperature history during actual use, and power cycle test that simulates the high-temperature operating state of the device (Tj = 85 to 175 ° C., 250 k cycle), there was a problem that the semiconductor element and the epoxy resin as the sealing material were peeled off from the end portion of the element.

この発明は、上述のような問題点を解決するためになされたもので、半導体モジュールの長期間の使用や、環境負荷により発生するエポキシ樹脂の剥離を抑制し、信頼性の高い半導体モジュールを得るものである。   The present invention has been made to solve the above-described problems, and it is possible to obtain a highly reliable semiconductor module by suppressing long-term use of the semiconductor module and exfoliation of epoxy resin caused by environmental load. Is.

この発明に係る半導体モジュールは、基板に搭載された半導体素子と、前記半導体素子の前記基板に対向する面の反対側の面の外周部、側面部、または外周角部に設けられた水素化アモルファスカーボンで形成された炭素系接着層と、前記炭素系接着層と接し、前記基板と前記半導体素子とを封止する封止樹脂とを備えたものである。
A semiconductor module according to the present invention includes a semiconductor element mounted on a substrate, and a hydrogenated amorphous material provided on an outer peripheral portion , a side surface portion, or an outer peripheral corner portion of a surface opposite to the surface of the semiconductor element facing the substrate. A carbon-based adhesive layer formed of carbon, and a sealing resin that contacts the carbon-based adhesive layer and seals the substrate and the semiconductor element are provided.

この発明は、半導体素子の外周部に炭素系接着層を設けたことで、半導体素子の外周部におけるエポキシ樹脂の剥離を抑制したので、半導体モジュールの長期間の使用や、環境負荷による劣化を抑制し、信頼性を向上することができる。   In this invention, the carbon-based adhesive layer is provided on the outer periphery of the semiconductor element, so that the epoxy resin is prevented from being peeled off at the outer periphery of the semiconductor element. In addition, reliability can be improved.

この発明の実施の形態１の半導体モジュールを示す断面構造模式図である。It is a cross-sectional structure schematic diagram which shows the semiconductor module of Embodiment 1 of this invention. この発明の実施の形態１の半導体モジュールの半導体素子と炭素系接着層の上面構造模式図と断面構造模式図である。It is the upper surface structure schematic diagram and sectional structure schematic diagram of the semiconductor element of the semiconductor module of Embodiment 1 of this invention, and a carbon-type contact bonding layer. この発明の実施の形態１の炭素系接着層表面処理のプロセスを示すフロー図である。It is a flowchart which shows the process of the carbon-type contact bonding layer surface treatment of Embodiment 1 of this invention. この発明の実施の形態１の炭素系接着層表裏面結合状態を示す断面構造模式図である。It is a cross-sectional structure schematic diagram which shows the carbon-type contact bonding layer front and back bonding state of Embodiment 1 of this invention. この発明の実施の形態３の半導体モジュールの半導体素子と炭素系接着層との上面構造模式図と断面構造模式図である。It is the upper surface structure schematic diagram and sectional structure schematic diagram of the semiconductor element of the semiconductor module of Embodiment 3 of this invention, and a carbon-type contact bonding layer. この発明の実施の形態３の半導体モジュールの別の半導体素子と炭素系接着層との上面構造模式図と断面構造模式図である。It is the upper surface structure schematic diagram and sectional structure schematic diagram of another semiconductor element and carbon-type contact bonding layer of the semiconductor module of Embodiment 3 of this invention. この発明の実施の形態４の炭素系接着層表面状態を示す断面構造模式図である。It is a cross-sectional structure schematic diagram which shows the carbon-type contact bonding layer surface state of Embodiment 4 of this invention. この発明の実施の形態４の他の炭素系接着層表面処理のプロセスを示すフロー図である。It is a flowchart which shows the process of the other carbon type adhesion layer surface treatment of Embodiment 4 of this invention. この発明の炭素系接着層とその他構成の接着強度の比較図である。It is a comparison figure of the adhesion strength of the carbon system adhesion layer of this invention, and other composition. この発明の実施の形態６のベルヌーイ式真空吸着治具を用いた場合の実装工程でのチップ搬送工程の概略図である。It is the schematic of the chip | tip conveyance process in the mounting process at the time of using the Bernoulli type vacuum suction jig of Embodiment 6 of this invention. この発明の実施の形態６の半導体モジュールの半導体素子と炭素系接着層の上面構造模式図と断面構造模式図である。It is the upper surface structure schematic diagram and sectional structure schematic diagram of the semiconductor element of the semiconductor module of Embodiment 6 of this invention, and a carbon-type contact bonding layer. この発明の実施の形態７の半導体モジュールの半導体素子と炭素系接着層との上面構造模式図と断面構造模式図である。It is the upper surface structure schematic diagram and cross-sectional structure schematic diagram of the semiconductor element and carbon-type contact bonding layer of the semiconductor module of Embodiment 7 of this invention. この発明の実施の形態７の別の半導体モジュールの半導体素子と炭素系接着層との上面構造模式図と断面構造模式図である。It is the upper surface structure schematic diagram and sectional structure schematic diagram of the semiconductor element of another semiconductor module of Embodiment 7 of this invention and a carbon-type contact bonding layer.

実施の形態１．
図１は、この発明の実施の形態１の半導体モジュールを示す断面構造模式図である。図２はこの発明の実施の形態１の半導体モジュールの半導体素子と炭素系接着層との上面構造模式図と断面構造模式図である。図１において、半導体モジュール１００は、半導体素子１、炭素系接着層２、封止樹脂であるモールド樹脂３、基板である冷却基板６を備えている。炭素系接着層２は、半導体素子１の表面側の外周部で半導体素子１とモールド樹脂３との接着力を強化するためのもので、水素化アモルファスカーボン（H:α-C）が考えられる。Embodiment 1 FIG.
1 is a schematic cross-sectional structure diagram showing a semiconductor module according to Embodiment 1 of the present invention. FIG. 2 is a schematic top view and a schematic cross-sectional view of the semiconductor element and the carbon-based adhesive layer of the semiconductor module according to Embodiment 1 of the present invention. In FIG. 1, a semiconductor module 100 includes a semiconductor element 1, a carbon-based adhesive layer 2, a mold resin 3 as a sealing resin, and a cooling substrate 6 as a substrate. The carbon-based adhesive layer 2 is for strengthening the adhesive force between the semiconductor element 1 and the mold resin 3 at the outer peripheral portion on the surface side of the semiconductor element 1, and hydrogenated amorphous carbon (H: α-C) is considered. .

図１に示すように、半導体素子１の裏面側は、はんだ４で冷却基板６と接合されている。また、半導体素子１の表面側の中央部は、はんだ４で端子板５と接合されている。そして、半導体素子１の表面側の外周部には、炭素系接着層２が形成されている。   As shown in FIG. 1, the back surface side of the semiconductor element 1 is joined to a cooling substrate 6 with solder 4. Further, the central portion on the front surface side of the semiconductor element 1 is joined to the terminal plate 5 with solder 4. A carbon-based adhesive layer 2 is formed on the outer peripheral portion on the surface side of the semiconductor element 1.

冷却基板６は、例えば、銅／窒化アルミ／銅の三層で構成されている。そして、冷却基板６の半導体素子１と接合されていない裏面側には、シリコン系絶縁シート７が接合されている。シリコン系絶縁シート７を介して半導体モジュール１００から外部へ排熱するための銅で形成された放熱板８が配置されている。このような形態の半導体モジュールを例えば、エポキシ樹脂のようなモールド樹脂３によりトランスファーモールドすることで半導体モジュール１００が構成されている。   The cooling substrate 6 is composed of, for example, three layers of copper / aluminum nitride / copper. A silicon-based insulating sheet 7 is bonded to the back side of the cooling substrate 6 that is not bonded to the semiconductor element 1. A heat radiating plate 8 made of copper for exhausting heat from the semiconductor module 100 to the outside through the silicon insulating sheet 7 is disposed. The semiconductor module 100 is configured by transfer molding the semiconductor module having such a configuration with a mold resin 3 such as an epoxy resin.

図２（ａ）には半導体素子の上面構造模式図を、図２（ｂ）には半導体素子の断面構造模式図を示す。図２（ａ）、図２（ｂ）に示すように、半導体素子１の表面側に形成されるモールド樹脂３が剥離しやすい半導体素子１の表面側の外周部を覆うように炭素系接着層２を形成している。炭素系接着層２の幅は、３００〜１０００μｍ程度あれば良い。炭素系接着層２の幅が３００μｍ以下では、炭素系接着層２が形成されても十分な接着力が得られず、モールド樹脂３の剥離が発生する。炭素系接着層２の幅が１０００μｍ以上では、モールド樹脂３との接着性は向上するが、半導体素子１の炭素系接着層２が形成されていない領域のチップ表面積が減少し端子板５との接続のための接続面積が減少して抵抗増化や接続不良の原因となる。   FIG. 2A shows a schematic top view of the semiconductor element, and FIG. 2B shows a schematic cross-sectional structure of the semiconductor element. As shown in FIGS. 2A and 2B, the carbon-based adhesive layer is formed so as to cover the outer peripheral portion on the surface side of the semiconductor element 1 where the mold resin 3 formed on the surface side of the semiconductor element 1 is easy to peel off. 2 is formed. The width | variety of the carbon-type contact bonding layer 2 should just be about 300-1000 micrometers. When the width of the carbon-based adhesive layer 2 is 300 μm or less, sufficient adhesive force cannot be obtained even when the carbon-based adhesive layer 2 is formed, and the mold resin 3 is peeled off. When the width of the carbon-based adhesive layer 2 is 1000 μm or more, the adhesion to the mold resin 3 is improved, but the chip surface area in the region where the carbon-based adhesive layer 2 of the semiconductor element 1 is not formed is reduced, and the terminal plate 5 The connection area for the connection is reduced, resulting in increased resistance and connection failure.

炭素系接着層２の膜厚は、１０〜２０ｎｍ程度あれば良い。炭素系接着層２の膜厚が１０ｎｍ以下では、膜厚ばらつきの影響により半導体素子１の表面側の外周部に炭素系接着層２が形成されない領域が発生する。そして、この部分では半導体素子１とモールド樹脂３とが直接接触するため、モールド樹脂３の剥離を抑制できない。   The film thickness of the carbon-based adhesive layer 2 may be about 10 to 20 nm. When the film thickness of the carbon-based adhesive layer 2 is 10 nm or less, a region where the carbon-based adhesive layer 2 is not formed occurs in the outer peripheral portion on the surface side of the semiconductor element 1 due to the influence of film thickness variation. And in this part, since the semiconductor element 1 and the mold resin 3 contact directly, peeling of the mold resin 3 cannot be suppressed.

また、炭素系接着層２の膜厚が２０ｎｍ以上では、炭素系接着層２の形成により半導体素子１の表面側の外周部からの剥離は抑制される。しかし、必要以上の膜厚の炭素系接着層２を形成することは、金属製のマスクを使用して選択的に作製する場合、炭素系接着層２のマスク下への回り込みが発生し、炭素系接着層２の幅にこの回り込み分が追加された形になるため、炭素系接着層２が形成されていない領域のチップ表面積を減少させる。そして、端子板５との接続のための接続面積が減少して抵抗増化や接続不良の原因となる。   Further, when the film thickness of the carbon-based adhesive layer 2 is 20 nm or more, peeling from the outer peripheral portion on the surface side of the semiconductor element 1 is suppressed by the formation of the carbon-based adhesive layer 2. However, the formation of the carbon-based adhesive layer 2 having a film thickness larger than necessary may cause the carbon-based adhesive layer 2 to wrap around under the mask when selectively produced using a metal mask, Since the wraparound portion is added to the width of the system adhesive layer 2, the chip surface area in the region where the carbon system adhesive layer 2 is not formed is reduced. And the connection area for the connection with the terminal board 5 decreases, resulting in increased resistance and connection failure.

このように、半導体素子１の表面側の外周部を炭素系接着層２で覆うことで、モールド樹脂３との接着性を向上することが可能となり、半導体素子１の表面側の外周部を基点としたモールド樹脂３の剥離が抑制できる。   Thus, by covering the outer peripheral portion on the surface side of the semiconductor element 1 with the carbon-based adhesive layer 2, it becomes possible to improve the adhesiveness with the mold resin 3, and the outer peripheral portion on the surface side of the semiconductor element 1 is the base point. The mold resin 3 can be prevented from peeling off.

図３は、この発明の実施の形態１の炭素系接着層表面処理のプロセスを示すフロー図である。図３に示すプロセスフローにおいて、ウエハプロセス工程終了後、基板の表面を洗浄する基板表面洗浄工程を行う。この処理により、ウエハプロセス工程による表面汚染、コンタミネーションを除去し、清浄な表面を露出形成する。次に、炭素系接着層２を選択的に作製するためのマスクをセットするマスクセット工程を行う。この処理により、炭素系接着層２を選択的に作製するための領域を確保する。次に、炭素系接着層２の成膜を行うための接着層成膜工程を行う。この処理により、マスクを用いて半導体素子１の表面に炭素系接着層２を選択的に形成する。このように、チップ表面にモールド樹脂３の接着性強化のための表面処理を施した後、モジュール実装工程が実施される。   FIG. 3 is a flowchart showing the carbon-based adhesive layer surface treatment process according to the first embodiment of the present invention. In the process flow shown in FIG. 3, a substrate surface cleaning step for cleaning the surface of the substrate is performed after the wafer process step is completed. By this process, surface contamination and contamination due to the wafer process are removed, and a clean surface is exposed and formed. Next, a mask setting step for setting a mask for selectively producing the carbon-based adhesive layer 2 is performed. By this treatment, a region for selectively producing the carbon-based adhesive layer 2 is secured. Next, an adhesive layer film forming step for forming the carbon-based adhesive layer 2 is performed. By this treatment, the carbon-based adhesive layer 2 is selectively formed on the surface of the semiconductor element 1 using a mask. As described above, the module mounting process is performed after the surface of the chip surface is subjected to the surface treatment for enhancing the adhesiveness of the mold resin 3.

マスクセット工程において、次工程の接着層成膜工程で炭素系接着層２を形成するときに、炭素系接着層２を形成したい部分を開口したステンレス製ステンシルマスクを用い、マスクの開口部を半導体素子１の表面側の外周部に位置合わせすることで、半導体素子１の表面側の外周部のみ選択的に炭素系接着層２を形成することができる。この炭素系接着層２は、例えば、イオンアシストする形式のスパッタ法や蒸着法、バイアス印加タイプのプラズマＣＶＤ等で形成することができる。また、炭素系接着層２の成膜する膜厚としては、１０〜２０ｎｍとする。また、このようにして作製した炭素系接着層２の構造としては、ＳＰ２構造とＳＰ３構造とで形成され、ＳＰ２の割合が５割程度である。   In the mask setting process, when the carbon-based adhesive layer 2 is formed in the adhesive layer film-forming process of the next process, a stainless stencil mask having an opening at a portion where the carbon-based adhesive layer 2 is to be formed is used, and the opening of the mask is a semiconductor. By aligning with the outer peripheral portion on the surface side of the element 1, the carbon-based adhesive layer 2 can be selectively formed only on the outer peripheral portion on the surface side of the semiconductor element 1. The carbon-based adhesive layer 2 can be formed by, for example, ion-assisted sputtering or vapor deposition, bias application type plasma CVD, or the like. The film thickness of the carbon-based adhesive layer 2 is 10 to 20 nm. Moreover, as a structure of the carbon-type adhesive layer 2 produced in this way, it is formed of an SP2 structure and an SP3 structure, and the ratio of SP2 is about 50%.

図４は、この発明の実施の形態１の炭素系接着層表裏面結合状態を示す断面構造模式図である。図４に示すように、炭素系接着層２の表面は、大気中放置により炭素系接着層２表面と結合した自然に水酸基が形成される。そして、この水酸基により炭素系接着層２とモールド樹脂３とは水素結合により接着する。また、炭素系接着層２の裏面は、半導体素子１と炭素系接着層２との格子間隔の差が小さいので接着性良く堆積させることができる。   FIG. 4 is a schematic cross-sectional structure diagram showing a carbon-based adhesive layer front / back surface bonding state according to Embodiment 1 of the present invention. As shown in FIG. 4, a hydroxyl group is naturally formed on the surface of the carbon-based adhesive layer 2 bonded to the surface of the carbon-based adhesive layer 2 by being left in the atmosphere. The carbon-based adhesive layer 2 and the mold resin 3 are bonded to each other by hydrogen bonding by the hydroxyl group. Further, since the difference in lattice spacing between the semiconductor element 1 and the carbon-based adhesive layer 2 is small, the back surface of the carbon-based adhesive layer 2 can be deposited with good adhesion.

以上のように構成された半導体モジュールにおいては、半導体素子１の表面側の外周部に炭素系接着層２を設けることにより、モールド樹脂３との接着性が向上する。これにより、半導体素子１上に形成したモールド樹脂３の半導体素子１の表面側の外周部を基点とした剥離が抑制され、ヒートサイクル、パワーサイクル試験での劣化が無く信頼性が向上する。   In the semiconductor module configured as described above, the adhesion with the mold resin 3 is improved by providing the carbon-based adhesive layer 2 on the outer peripheral portion on the surface side of the semiconductor element 1. As a result, peeling of the mold resin 3 formed on the semiconductor element 1 from the outer peripheral portion on the surface side of the semiconductor element 1 as a base point is suppressed, and there is no deterioration in the heat cycle and power cycle tests, and the reliability is improved.

実施の形態２．
本実施の形態２においては、実施の形態１で用いた炭素系接着層２をＳＰ２構造のグラファイト構造よりもＳＰ３構造の割合が多くなるような水素化アモルファスカーボン（H:α-C）とした点が異なる。このように、ＳＰ２構造のグラファイト構造よりもＳＰ３構造の割合が多くなるような水素化アモルファスカーボン（H:α-C）としたことで、同じＳＰ３構造を持つＳｉＣ基板を用いた半導体素子１に、より強固に炭素系接着層２を形成することができ、モールド樹脂３の剥離を抑制できる。Embodiment 2. FIG.
In the second embodiment, the carbon-based adhesive layer 2 used in the first embodiment is made of hydrogenated amorphous carbon (H: α-C) in which the proportion of the SP3 structure is larger than the graphite structure of the SP2 structure. The point is different. Thus, by using hydrogenated amorphous carbon (H: α-C) in which the proportion of the SP3 structure is larger than the graphite structure of the SP2 structure, the semiconductor element 1 using the SiC substrate having the same SP3 structure is used. Thus, the carbon-based adhesive layer 2 can be formed more firmly, and peeling of the mold resin 3 can be suppressed.

この炭素系接着層２は、例えば、イオンアシストする形式のスパッタ法や蒸着法、バイアス印加タイプのプラズマＣＶＤ等で形成することができる。また、バイアス印加タイプのプラズマＣＶＤを用いた形成では、成膜中の水素ガスの割合を増やすことで、ＳＰ３構造の割合の多い炭素系接着層２を形成することができる。   The carbon-based adhesive layer 2 can be formed by, for example, ion-assisted sputtering or vapor deposition, bias application type plasma CVD, or the like. Further, in the formation using the bias applied type plasma CVD, the carbon-based adhesive layer 2 having a high SP3 structure ratio can be formed by increasing the ratio of the hydrogen gas during the film formation.

一方、炭素系接着層２の８割以上をＳＰ３構造としてしまうと、形成する炭素系接着層２自体が強固になってしまい、半導体素子作製時の残渣や、凹凸のある半導体素子表面に形成した膜が接着しなくなるので良くない。   On the other hand, if 80% or more of the carbon-based adhesive layer 2 has an SP3 structure, the carbon-based adhesive layer 2 to be formed itself becomes strong and formed on the surface of a semiconductor element with a residue or unevenness when a semiconductor element is manufactured. It is not good because the film will not adhere.

以上のように構成された半導体モジュールにおいては、半導体素子１の表面側の外周部にＳＰ３構造を多く含む炭素系接着層２を設けることにより、モールド樹脂３との接着性を保持したまま、ＳｉＣで構成される半導体素子１とも接着性がさらに向上する。これにより、半導体素子１上に形成したモールド樹脂３の半導体素子１の表面側の外周部を基点とした剥離が抑制され、ヒートサイクル、パワーサイクル試験での劣化が無く信頼性が向上する。   In the semiconductor module configured as described above, by providing the carbon-based adhesive layer 2 containing a large amount of SP3 structure on the outer peripheral portion on the surface side of the semiconductor element 1, while maintaining the adhesion to the mold resin 3, the SiC Adhesiveness is further improved with the semiconductor element 1 configured as follows. As a result, peeling of the mold resin 3 formed on the semiconductor element 1 from the outer peripheral portion on the surface side of the semiconductor element 1 as a base point is suppressed, and there is no deterioration in the heat cycle and power cycle tests, and the reliability is improved.

さらに、成膜中の水素ガスの割合を変化させながら炭素系接着層２を成膜することで、炭素系接着層２のＳｉＣ基板表面側をＳＰ３構造リッチに、モールド樹脂３であるエポキシ樹脂に接する表面側をＳＰ２構造リッチとすることもできる。炭素系接着層２をこのような構成とすることで、炭素系接着層２が接する材料に適した組成とすることができ、さらに接着性が向上する。   Furthermore, by depositing the carbon-based adhesive layer 2 while changing the ratio of hydrogen gas during film formation, the SiC substrate surface side of the carbon-based adhesive layer 2 is rich in SP3 structure, and the epoxy resin that is the mold resin 3 is changed to the epoxy resin. The surface side in contact with the SP2 structure may be rich. By setting the carbon-based adhesive layer 2 in such a configuration, it is possible to obtain a composition suitable for the material with which the carbon-based adhesive layer 2 is in contact, and the adhesion is further improved.

実施の形態３．
本実施の形態３においては、実施の形態１で用いた炭素系接着層２を、半導体素子１を切断処理後に形成した点が異なる。このように、半導体素子１を切断処理後に炭素系接着層２を形成することで半導体素子１の表面側の外周部だけでなく、半導体素子１の側面に対しても炭素系接着層２を形成したことで、モールド樹脂３は半導体素子１の表面だけでなく側面でも炭素系接着層２と接着するため、より強固に炭素系接着層２を形成することができ、モールド樹脂３の剥離を抑制できる。Embodiment 3 FIG.
The third embodiment is different in that the carbon-based adhesive layer 2 used in the first embodiment is formed after the semiconductor element 1 is cut. Thus, the carbon-based adhesive layer 2 is formed not only on the outer peripheral portion on the surface side of the semiconductor element 1 but also on the side surface of the semiconductor element 1 by forming the carbon-based adhesive layer 2 after the semiconductor element 1 is cut. As a result, since the mold resin 3 adheres to the carbon-based adhesive layer 2 not only on the surface of the semiconductor element 1 but also on the side surface, the carbon-based adhesive layer 2 can be formed more firmly, and the mold resin 3 is prevented from peeling. it can.

図５は、この発明の実施の形態３の半導体モジュールの半導体素子と炭素系接着層との上面構造模式図と断面構造模式図である。図５（ａ）には半導体素子の上面構造模式図を、図５（ｂ）には半導体素子の断面構造模式図を示す。図５に示すように、ウェハのダイシング領域で基板厚方向に半分程度切断してから、炭素系接着層２を形成したい部分を開口したステンレス製ステンシルマスクを用い、マスクの開口部を半導体素子１の表面側の外周部に位置合わせすることにより、図５（ａ）、図５（ｂ）に示すようにモールド樹脂が剥離しやすい半導体素子の表面側の外周部と側面の一部に炭素系接着層２を選択的に形成する。   FIG. 5 is a schematic top view and a schematic cross-sectional view of a semiconductor element and a carbon-based adhesive layer of a semiconductor module according to Embodiment 3 of the present invention. FIG. 5A shows a schematic top view of the semiconductor element, and FIG. 5B shows a schematic cross-sectional structure of the semiconductor element. As shown in FIG. 5, a stainless steel stencil mask is used in which a portion where the carbon-based adhesive layer 2 is to be formed is cut in the dicing region of the wafer in the substrate thickness direction, and the mask opening is formed in the semiconductor element 1 5 (a) and FIG. 5 (b), by aligning with the outer peripheral portion on the surface side of the semiconductor device, the carbon resin is formed on the outer peripheral portion and part of the side surface of the semiconductor element where the mold resin is easily peeled off. The adhesive layer 2 is selectively formed.

図６は、この発明の実施の形態３の半導体モジュールの別の半導体素子と炭素系接着層との上面構造模式図と断面構造模式図である。図６（ａ）には半導体素子の上面図を、図６（ｂ）には半導体素子の断面図を示す。   6 is a schematic top view and a schematic cross-sectional view of another semiconductor element and a carbon-based adhesive layer of a semiconductor module according to Embodiment 3 of the present invention. FIG. 6A shows a top view of the semiconductor element, and FIG. 6B shows a cross-sectional view of the semiconductor element.

図５では、側面の一部に炭素系接着層２を形成したが、チップ切断後にステンシルマスクを被せて炭素系接着層２を形成すれば、図６（ａ）、図６（ｂ）のように半導体素子１の側面全面に炭素系接着層２を形成することができる。   In FIG. 5, the carbon-based adhesive layer 2 is formed on a part of the side surface. However, if the carbon-based adhesive layer 2 is formed by covering the stencil mask after cutting the chip, as shown in FIGS. 6 (a) and 6 (b). In addition, the carbon-based adhesive layer 2 can be formed on the entire side surface of the semiconductor element 1.

以上のように構成された半導体モジュールにおいては、半導体素子１の表面側の外周部と半導体素子１の側面にも炭素系接着層２を設けることにより、炭素系接着層２とモールド樹脂３との接触面積が増加することにより、モールド樹脂３との接着性がさらに向上する。これにより、半導体素子１上に形成したモールド樹脂３の半導体素子１の表面側の外周部を基点とした剥離が抑制され、ヒートサイクル、パワーサイクル試験での劣化が無く信頼性が向上する。   In the semiconductor module configured as described above, the carbon-based adhesive layer 2 and the mold resin 3 are provided by providing the carbon-based adhesive layer 2 on the outer peripheral portion on the surface side of the semiconductor element 1 and the side surface of the semiconductor element 1. By increasing the contact area, the adhesion with the mold resin 3 is further improved. As a result, peeling of the mold resin 3 formed on the semiconductor element 1 from the outer peripheral portion on the surface side of the semiconductor element 1 as a base point is suppressed, and there is no deterioration in the heat cycle and power cycle tests, and the reliability is improved.

実施の形態４．
本実施の形態４においては、実施の形態１で用いた炭素系接着層２の表面をプラズマエッチングにより粗化した点が異なる。このように、炭素系接着層２の表面をプラズマエッチングにより粗化することで、炭素系接着層２の表面の実質的な接着面積が増加し、モールド樹脂３との接着力を増加させるため、より強固に形成することができる。Embodiment 4 FIG.
The fourth embodiment is different in that the surface of the carbon-based adhesive layer 2 used in the first embodiment is roughened by plasma etching. Thus, by roughening the surface of the carbon-based adhesive layer 2 by plasma etching, the substantial adhesion area of the surface of the carbon-based adhesive layer 2 is increased, and the adhesive force with the mold resin 3 is increased. It can be formed more firmly.

図７は、この発明の実施の形態４の炭素系接着層表面状態を示す断面構造模式図である。図７に示すように、炭素系接着層２の表面は、プラズマエッチングにより粗化することで、実質的な接着面積が増加する。   FIG. 7 is a schematic cross-sectional structure diagram showing the surface state of the carbon-based adhesive layer according to Embodiment 4 of the present invention. As shown in FIG. 7, the surface of the carbon-based adhesive layer 2 is roughened by plasma etching, so that the substantial adhesion area increases.

図８は、この発明の実施の形態４の他の炭素系接着層表面処理のプロセスを示すフロー図である。ここで、図８に示すプロセスフローにおいて、炭素系接着層２を形成後、平行平板型のリアクティブ・イオンエッチングやイオンミリング装置、大気圧プラズマ装置を用いて炭素系接着層２の表面をプラズマに曝すことで粗化することができる。このとき、炭素系接着層２を形成する時のマスクを継続して使用すると、半導体素子端子部のダメージを防止することができる。   FIG. 8 is a flowchart showing another carbon-based adhesive layer surface treatment process according to the fourth embodiment of the present invention. Here, in the process flow shown in FIG. 8, after the carbon-based adhesive layer 2 is formed, the surface of the carbon-based adhesive layer 2 is subjected to plasma using a parallel plate type reactive ion etching, ion milling apparatus, or atmospheric pressure plasma apparatus. It can be roughened by exposure. At this time, if the mask for forming the carbon-based adhesive layer 2 is continuously used, damage to the semiconductor element terminal portion can be prevented.

以上のように構成された半導体モジュールにおいては、炭素系接着層２の表面を粗化することにより、炭素系接着層２の表面の実質的な接着面積が増加し、モールド樹脂３との接着性がさらに向上する。これにより、半導体素子１上に形成したモールド樹脂３の半導体素子１の表面側の外周部を基点とした剥離が抑制され、ヒートサイクル、パワーサイクル試験での劣化が無く信頼性が向上する。   In the semiconductor module configured as described above, by roughening the surface of the carbon-based adhesive layer 2, the substantial adhesive area of the surface of the carbon-based adhesive layer 2 is increased, and the adhesiveness to the mold resin 3 is increased. Is further improved. As a result, peeling of the mold resin 3 formed on the semiconductor element 1 from the outer peripheral portion on the surface side of the semiconductor element 1 as a base point is suppressed, and there is no deterioration in the heat cycle and power cycle tests, and the reliability is improved.

実施の形態５．
本実施の形態５においては、実施の形態１で用いた炭素系接着層２の表面に積極的に水酸基を付与した点が異なる。このように、炭素系接着層２の表面に水酸基を付与することで、炭素系接着層２の表面の実質的な接着力が増加し、モールド樹脂３との接着力を増加させるため、より強固に形成することができる。Embodiment 5. FIG.
The fifth embodiment is different in that a hydroxyl group is positively added to the surface of the carbon-based adhesive layer 2 used in the first embodiment. Thus, by giving a hydroxyl group to the surface of the carbon-based adhesive layer 2, the substantial adhesive force on the surface of the carbon-based adhesive layer 2 is increased and the adhesive force with the mold resin 3 is increased. Can be formed.

炭素系接着層２の表面を、図４に示した大気中放置で自然に形成される炭素系接着層２表面と結合する水酸基を、大気圧プラズマ装置を用いて、積極的に水酸基付与することで、モールド樹脂３との接着力を増加させ、より信頼性の高いモジュールとすることができる。   4. Hydroxyl group is positively imparted by using an atmospheric pressure plasma apparatus to bond a hydroxyl group that binds to the surface of the carbon-based adhesive layer 2 that is naturally formed when left in the atmosphere shown in FIG. Thus, the adhesive force with the mold resin 3 is increased, and a module with higher reliability can be obtained.

ここで、図８に示すプロセスフローにおいて、炭素系接着層２を形成後、例えば、窒素ガスを用いた大気圧プラズマ装置を用いてプラズマ照射すると、炭素系接着層２の表面に水酸基を付与することができる。なお、トーチ型の大気圧プラズマ装置を用いれば、炭素系接着層２を形成する時に使用したマスクを継続使用する必要はない。今回は窒素ガスを用いたが、アルゴンガス等の不活性ガスでも、空気、あるいは、これらの混合ガスを用いてもよい。   Here, in the process flow shown in FIG. 8, after forming the carbon-based adhesive layer 2, for example, when plasma irradiation is performed using an atmospheric pressure plasma apparatus using nitrogen gas, a hydroxyl group is imparted to the surface of the carbon-based adhesive layer 2. be able to. If a torch type atmospheric pressure plasma apparatus is used, it is not necessary to continuously use the mask used when the carbon-based adhesive layer 2 is formed. Although nitrogen gas is used this time, an inert gas such as argon gas, air, or a mixed gas thereof may be used.

図８に示したような作製工程を経て作製された炭素系接着層２は、例えば、ＳｉＣ基板を用いた半導体素子１表面上に形成した場合、ＳｉＣ基板を用いた半導体素子１と炭素系接着層２との格子間隔に大きな差異がないので接着性良く堆積させることができる。また、ＳｉＣ基板を用いた半導体素子１と接している反対面側である炭素系接着層２表面の吸着水の存在により、この半導体素子１をトランスファーモールドするモールド樹脂３とも水素結合により強固に接着する。この吸着水は、図８に示した水酸基付与工程において、炭素系接着層２の表面は窒素ガスを動作ガスとして大気圧プラズマ処理をすることで、炭素系接着層２の表面に水酸基を形成させ、その上に吸着水を付着させることができる。   For example, when the carbon-based adhesive layer 2 manufactured through the manufacturing process shown in FIG. 8 is formed on the surface of the semiconductor element 1 using the SiC substrate, the carbon-based adhesive layer 2 and the semiconductor element 1 using the SiC substrate are bonded. Since there is no great difference in the lattice spacing from the layer 2, it can be deposited with good adhesion. Further, due to the presence of adsorbed water on the surface of the carbon-based adhesive layer 2 on the opposite side in contact with the semiconductor element 1 using a SiC substrate, the semiconductor element 1 is firmly bonded to the mold resin 3 for transfer molding by hydrogen bonding. To do. The adsorbed water is formed in the surface of the carbon-based adhesive layer 2 by subjecting the surface of the carbon-based adhesive layer 2 to atmospheric pressure plasma treatment using nitrogen gas as an operating gas in the hydroxyl group application step shown in FIG. , Adsorbed water can be deposited on it.

以上のように構成された半導体モジュールにおいては、炭素系接着層２の表面に水酸基を付与することにより、モールド樹脂３との接着性がさらに向上する。これにより、半導体素子１上に形成したモールド樹脂３の半導体素子１の表面側の外周部を基点とした剥離が抑制され、ヒートサイクル、パワーサイクル試験での劣化が無く信頼性が向上する。さらに、実施の形態４に示した、炭素系接着層２の表面を粗化した後、その粗化した炭素系接着層２に水酸基付与しても良い。これにより、さらに、モールド樹脂３との接着性が向上し、モールド樹脂３の半導体素子１の表面側の外周部を基点とした剥離が抑制され、ヒートサイクル、パワーサイクル試験での劣化が無く信頼性が向上する。   In the semiconductor module configured as described above, the adhesion to the mold resin 3 is further improved by adding a hydroxyl group to the surface of the carbon-based adhesive layer 2. As a result, peeling of the mold resin 3 formed on the semiconductor element 1 from the outer peripheral portion on the surface side of the semiconductor element 1 as a base point is suppressed, and there is no deterioration in the heat cycle and power cycle tests, and the reliability is improved. Furthermore, after roughening the surface of the carbon-based adhesive layer 2 shown in Embodiment 4, a hydroxyl group may be imparted to the roughened carbon-based adhesive layer 2. As a result, the adhesion with the mold resin 3 is further improved, the peeling of the mold resin 3 from the outer peripheral portion on the surface side of the semiconductor element 1 is suppressed, and there is no deterioration in the heat cycle and power cycle tests. Improves.

図９に、この発明の炭素系接着層とその他構成の接着強度の比較図である。接着強度の評価は、半導体素子基板にモールド樹脂をプリンカップ形状に形成し、剪断剥離強度測定を実施した。ＳｉＣ基板に直接モールド樹脂を接着した場合は、剪断剥離強度が５．６ＭＰａであり、シリコン基板上にモールド樹脂を接着した場合の強度の１７．９ＭＰａの１／３以下と小さな値である。   FIG. 9 is a comparative view of the adhesive strength of the carbon-based adhesive layer of the present invention and other configurations. For evaluation of the adhesive strength, a mold resin was formed in a pudding cup shape on the semiconductor element substrate, and shear peel strength measurement was performed. When the mold resin is directly bonded to the SiC substrate, the shear peel strength is 5.6 MPa, which is as small as 1/3 or less of 17.9 MPa of the strength when the mold resin is bonded to the silicon substrate.

一方、水素化アモルファスカーボン膜を形成した場合の接着強度は１０ＭＰａと水素化アモルファスカーボン膜を形成しない場合の約２倍に大きくなる（実施の形態１）。さらに、水素化アモルファスカーボン膜を表面粗化した場合の接着強度は、１２．８ＭＰａ（実施の形態４）となり、水酸基を付与した場合は１６．８ＭＰａ（実施の形態５）となり、シリコン基板とほぼ同等の値になる。   On the other hand, the adhesive strength when the hydrogenated amorphous carbon film is formed is 10 MPa, which is about twice as large as when the hydrogenated amorphous carbon film is not formed (Embodiment 1). Furthermore, the adhesive strength when the surface of the hydrogenated amorphous carbon film is roughened is 12.8 MPa (Embodiment 4), and when a hydroxyl group is added, it becomes 16.8 MPa (Embodiment 5), which is almost equal to that of the silicon substrate. Equivalent value.

実施の形態６．
本実施の形態６においては、実施の形態１〜５で用いた半導体素子１の外周部に形成された炭素系接着層２を半導体素子１の実装工程を考慮し、半導体素子１の外周角部近傍に形成した点が異なる。このように、炭素系接着層２を半導体素子１の外周角部近傍に形成することで、半導体素子１表面の四辺の一部が接触する治具を用いた実装工程においても、治具との接触による炭素系接着層２の損傷を抑制することができ、モールド樹脂３との接着力の低下を防止できる。Embodiment 6 FIG.
In the sixth embodiment, the carbon-based adhesive layer 2 formed on the outer peripheral portion of the semiconductor element 1 used in the first to fifth embodiments is considered in the mounting process of the semiconductor element 1, and the outer peripheral corner portion of the semiconductor element 1 is used. The points formed in the vicinity are different. Thus, by forming the carbon-based adhesive layer 2 in the vicinity of the outer peripheral corner of the semiconductor element 1, even in a mounting process using a jig in which a part of the four sides of the surface of the semiconductor element 1 is in contact with the jig, Damage to the carbon-based adhesive layer 2 due to contact can be suppressed, and a decrease in adhesive strength with the mold resin 3 can be prevented.

半導体素子１形成後、実装工程で半導体素子１を取り扱い、ヒートスプレッダに接合する工程で、真空吸着治具でチップケースからチップを取り出してヒートスプレッダに載せる作業工程がある。このとき、真空吸着治具で半導体素子１中央を吸着させると半導体素子１の表面が汚れる可能性があるため、後工程でチップ表面の洗浄が必要となる。しかしながら、後工程において半導体素子１表面の洗浄が不可の場合、半導体素子１表面を汚さないように、例えば、ベルヌーイ式真空吸着治具を用いて作業を行う必要がある。このときに、半導体素子１外周部全域に炭素系接着層２を形成しておくと、半導体素子１表面の四辺の一部が真空吸着治具に接触し、炭素系接着層２を損傷してしまう可能性がある。そして、炭素系接着層２に損傷を与えてしまうと、この損傷部位を起点として、信頼性試験においてモールド樹脂３が半導体素子１から剥離してしまうことになる。   After the semiconductor element 1 is formed, the semiconductor element 1 is handled in the mounting process and joined to the heat spreader, and there is an operation process of taking out the chip from the chip case with a vacuum suction jig and placing it on the heat spreader. At this time, if the center of the semiconductor element 1 is sucked with a vacuum suction jig, the surface of the semiconductor element 1 may be contaminated, so that the chip surface needs to be cleaned in a later step. However, when the surface of the semiconductor element 1 cannot be cleaned in a subsequent process, it is necessary to perform an operation using, for example, a Bernoulli-type vacuum suction jig so as not to contaminate the surface of the semiconductor element 1. At this time, if the carbon-based adhesive layer 2 is formed over the entire outer periphery of the semiconductor element 1, a part of the four sides of the surface of the semiconductor element 1 comes into contact with the vacuum suction jig, and the carbon-based adhesive layer 2 is damaged. There is a possibility. If the carbon-based adhesive layer 2 is damaged, the mold resin 3 is peeled off from the semiconductor element 1 in the reliability test using the damaged portion as a starting point.

図１０には、この発明の実施の形態６のベルヌーイ式真空吸着治具を用いた場合の実装工程でのチップ搬送工程の概略図である。図１０（ａ）にベルヌーイ式真空吸着治具の断面構造模式図を、図１０（ｂ）にはベルヌーイ式真空吸着治具の下面構造模式図を示す。図１０において、ベルヌーイ式真空吸着治具は、コレット１１、横滑り防止突起１２、送風口１３を備える。そして、横滑り防止突起１２と半導体素子１の四辺とが接触する構造となっている。このような構造とすることで、半導体素子１を吸着し搬送できる。   FIG. 10 is a schematic diagram of a chip carrying process in the mounting process when the Bernoulli vacuum suction jig according to the sixth embodiment of the present invention is used. FIG. 10A shows a schematic sectional view of a Bernoulli-type vacuum suction jig, and FIG. 10B shows a schematic bottom view of the Bernoulli-type vacuum suction jig. In FIG. 10, the Bernoulli-type vacuum suction jig includes a collet 11, a skid prevention protrusion 12, and a blower port 13. In addition, the skid prevention protrusion 12 and the four sides of the semiconductor element 1 are in contact with each other. By setting it as such a structure, the semiconductor element 1 can be adsorb | sucked and conveyed.

図１０に示すようなベルヌーイ式真空吸着治具を用いる場合は、大きな剥離応力が発生する半導体素子１の四辺近傍に炭素系接着層２を設け、真空吸着治具に接触する半導体素子１の辺部には炭素系接着層２は設けない。   When a Bernoulli-type vacuum suction jig as shown in FIG. 10 is used, a carbon-based adhesive layer 2 is provided in the vicinity of the four sides of the semiconductor element 1 where a large peeling stress is generated, and the side of the semiconductor element 1 in contact with the vacuum suction jig The carbon-based adhesive layer 2 is not provided on the part.

図１１は、この発明の実施の形態６の半導体モジュールの半導体素子と炭素系接着層の上面構造模式図と断面構造模式図である。図１１（ａ）には半導体素子の上面構造模式図を、図１１（ｂ）には半導体素子の断面構造模式図を示す。図１１において、本実施の形態１で用いた炭素系接着層２を、半導体素子１の外周角部近傍である表面側の外周角部に形成したもので、半導体素子１の表面側外周全周に渡り炭素系接着層２が連続して形成されていないところが異なる。   FIG. 11 is a schematic top view and a schematic cross-sectional view of a semiconductor element and a carbon-based adhesive layer of a semiconductor module according to Embodiment 6 of the present invention. FIG. 11A shows a schematic top view of a semiconductor element, and FIG. 11B shows a schematic cross-sectional structure of the semiconductor element. In FIG. 11, the carbon-based adhesive layer 2 used in the first embodiment is formed on the outer peripheral corner portion on the surface side in the vicinity of the outer peripheral corner portion of the semiconductor element 1. However, the carbon-based adhesive layer 2 is not continuously formed.

炭素系接着層２の辺方向の形成長さは、１０μｍ以上あれば良い。また、一辺における炭素系接着層２が形成されていない領域の長さはチップ搬送用の、例えば、ベルヌーイ式真空吸着治具の横滑り防止突起１２の幅よりも広ければよく、真空吸着治具の形状により異なる。例えば、真空吸着治具の横滑り防止突起１２の幅が１ｍｍ、治具内にチップの位置精度が±１ｍｍである場合には、炭素系接着層２の不連続部分の長さを３ｍｍ程度とすれば良い。チップの一辺の長さが５ｍｍ程度以上であれば、このような寸法で良い。なお、炭素系接着層２の厚み、半導体素子１の表面の形成幅は、それぞれ、１０〜２０ｎｍ程度、３００〜１０００μｍ程度あれば良い。   The formation length in the side direction of the carbon-based adhesive layer 2 may be 10 μm or more. Further, the length of the region where the carbon-based adhesive layer 2 is not formed on one side may be wider than the width of the skid prevention protrusion 12 of the Bernoulli-type vacuum suction jig, for example, for chip conveyance. It depends on the shape. For example, when the width of the skid prevention protrusion 12 of the vacuum suction jig is 1 mm and the position accuracy of the chip in the jig is ± 1 mm, the length of the discontinuous portion of the carbon-based adhesive layer 2 should be about 3 mm. It ’s fine. If the length of one side of the chip is about 5 mm or more, such a dimension is sufficient. The thickness of the carbon-based adhesive layer 2 and the formation width of the surface of the semiconductor element 1 may be about 10 to 20 nm and about 300 to 1000 μm, respectively.

以上のように構成された半導体モジュールにおいては、半導体素子１の表面側の外周部の外周角部に炭素系接着層２を設けることにより、モールド樹脂３との接着性が向上する。これにより、半導体素子１上に形成したモールド樹脂３の半導体素子１の表面側の外周部を基点とした剥離が抑制され、ヒートサイクル、パワーサイクル試験での劣化が無く信頼性が向上する。   In the semiconductor module configured as described above, the adhesion to the mold resin 3 is improved by providing the carbon-based adhesive layer 2 at the outer peripheral corner of the outer peripheral portion on the surface side of the semiconductor element 1. As a result, peeling of the mold resin 3 formed on the semiconductor element 1 from the outer peripheral portion on the surface side of the semiconductor element 1 as a base point is suppressed, and there is no deterioration in the heat cycle and power cycle tests, and the reliability is improved.

また、真空吸着治具に接触する半導体素子１の辺部に炭素系接着層２が形成されていないので、真空吸着時に炭素系接着層２を損傷することがなく、半導体モジュールの製造工程で発生する損傷による信頼性の劣化を抑制することができる。   Further, since the carbon-based adhesive layer 2 is not formed on the side portion of the semiconductor element 1 that contacts the vacuum suction jig, the carbon-based adhesive layer 2 is not damaged during vacuum suction, and is generated in the manufacturing process of the semiconductor module. It is possible to suppress deterioration of reliability due to damage.

さらに、炭素系接着層２の半導体素子１上における形成面積を小さくすることができるので、炭素系接着層２自身の膜応力による炭素系接着層２の剥離を抑制することができる。   Furthermore, since the formation area of the carbon-based adhesive layer 2 on the semiconductor element 1 can be reduced, peeling of the carbon-based adhesive layer 2 due to the film stress of the carbon-based adhesive layer 2 itself can be suppressed.

また、炭素系接着層２を形成した半導体素子１の変形を抑制できるので、半導体素子１の実装時に半導体素子１の傾きを抑制できるので、生産性を向上することができる。   In addition, since deformation of the semiconductor element 1 on which the carbon-based adhesive layer 2 is formed can be suppressed, the inclination of the semiconductor element 1 can be suppressed when the semiconductor element 1 is mounted, so that productivity can be improved.

実施の形態７．
本実施の形態７においては、実施の形態３で用いた切断処理後の半導体素子１に形成した炭素系接着層２を半導体素子１の外周角部近傍に形成した点が異なる。このように、半導体素子１の外周角部近傍に対応する側面部にも炭素系接着層２を形成することで、モールド樹脂３の剥離をより抑制することができる。Embodiment 7 FIG.
The seventh embodiment is different in that the carbon-based adhesive layer 2 formed on the semiconductor element 1 after the cutting process used in the third embodiment is formed in the vicinity of the outer peripheral corner of the semiconductor element 1. As described above, by forming the carbon-based adhesive layer 2 also on the side surface corresponding to the vicinity of the outer peripheral corner of the semiconductor element 1, peeling of the mold resin 3 can be further suppressed.

図１２は、この発明の実施の形態７の半導体モジュールの半導体素子と炭素系接着層との上面構造模式図と断面構造模式図である。図１２（ａ）には半導体素子の上面構造模式図を、図１２（ｂ）には半導体素子の断面構造模式図を示す。図１２に示すように、ウェハのダイシング領域で基板厚方向に半分程度切断してから、炭素系接着層２を形成したい部分を開口したステンレス製ステンシルマスクを用い、マスクの開口部を半導体素子１の表面側の外周部に位置合わせすることにより、図１２（ａ）、図１２（ｂ）に示すようにモールド樹脂３が剥離しやすい半導体素子１の表面側の外周角部と側面の一部に炭素系接着層２を選択的に形成する。   12 is a schematic top view and a schematic cross-sectional view of a semiconductor element and a carbon-based adhesive layer of a semiconductor module according to Embodiment 7 of the present invention. FIG. 12A shows a schematic top view of a semiconductor element, and FIG. 12B shows a schematic cross-sectional structure of the semiconductor element. As shown in FIG. 12, a stainless stencil mask having a portion where the carbon-based adhesive layer 2 is to be formed is opened after being cut about half in the substrate thickness direction in the dicing region of the wafer. 12A and 12B, by aligning with the outer peripheral portion on the front surface side of the semiconductor device 1, the outer peripheral corner portion and part of the side surface on the front surface side of the semiconductor element 1 where the mold resin 3 is easily peeled off The carbon-based adhesive layer 2 is selectively formed.

炭素系接着層２の辺方向の形成長さは、１０μｍ以上あれば良い。また、一辺における炭素系接着層２が形成されていない領域の長さはチップ搬送用の、例えば、ベルヌーイ式真空吸着治具の横滑り防止突起１２の幅よりも広ければよく、真空吸着治具の形状により異なる。例えば、真空吸着治具の横滑り防止突起１２の幅が１ｍｍ、治具内にチップの位置精度が±１ｍｍである場合には、炭素系接着層２の不連続部分の長さを３ｍｍ程度とすれば良い。チップの一辺の長さが５ｍｍ程度以上であれば、このような寸法で良い。なお、炭素系接着層２の厚み、半導体素子１表面の形成幅は、それぞれ、１０〜２０ｎｍ程度、３００〜１０００μｍ程度あれば良い。   The formation length in the side direction of the carbon-based adhesive layer 2 may be 10 μm or more. Further, the length of the region where the carbon-based adhesive layer 2 is not formed on one side may be wider than the width of the skid prevention protrusion 12 of the Bernoulli-type vacuum suction jig, for example, for chip conveyance. It depends on the shape. For example, when the width of the skid prevention protrusion 12 of the vacuum suction jig is 1 mm and the position accuracy of the chip in the jig is ± 1 mm, the length of the discontinuous portion of the carbon-based adhesive layer 2 should be about 3 mm. It ’s fine. If the length of one side of the chip is about 5 mm or more, such a dimension is sufficient. The thickness of the carbon-based adhesive layer 2 and the formation width of the surface of the semiconductor element 1 may be about 10 to 20 nm and about 300 to 1000 μm, respectively.

半分程度切断する深さは半導体基板厚の残し厚みが１０μｍ以上あればよく、例えば、半導体基板厚が３００μｍの場合、２９０μｍ程度切り込んでも良い。一方、切断深さを浅く切る場合には、深さは１０μｍ程度以上あれば、半導体素子１の側面上部を炭素系接着層２で被覆できる。このとき、炭素系接着層２は半導体素子１表面から裏面方向へ、５μｍ程度以上側面が被覆できていれば、モールド樹脂３の剥離を抑制できる。   The remaining depth of the semiconductor substrate may be about 10 μm or more. For example, when the semiconductor substrate thickness is 300 μm, the depth of cutting may be about 290 μm. On the other hand, when the cutting depth is shallow, the upper side surface of the semiconductor element 1 can be covered with the carbon-based adhesive layer 2 if the depth is about 10 μm or more. At this time, if the carbon-based adhesive layer 2 can cover the side surface of the semiconductor element 1 from the surface to the back surface by about 5 μm or more, it is possible to suppress the peeling of the mold resin 3.

図１３は、この発明の実施の形態７の別の半導体モジュールの半導体素子と炭素系接着層との上面構造模式図と断面構造模式図である。図１３（ａ）には半導体素子の上面構造模式図を、図１３（ｂ）には半導体素子の断面構造模式図を示す。   FIG. 13 is a schematic top view and a schematic cross-sectional view of a semiconductor element and a carbon-based adhesive layer of another semiconductor module according to Embodiment 7 of the present invention. FIG. 13A shows a schematic top view of a semiconductor element, and FIG. 13B shows a schematic cross-sectional structure of the semiconductor element.

図１２では、側面の一部に炭素系接着層２を形成したが、チップ切断後にステンシルマスクを被せて炭素系接着層２を形成すれば、図１３（ａ）、図１３（ｂ）のように半導体素子１の側面全面に炭素系接着層２を形成することができる。炭素系接着層２の辺方向の形成長さは、１０μｍ以上あれば良い。また、一辺における炭素系接着層２が形成されていない領域の長さはチップ搬送用の、例えば、ベルヌーイ式真空吸着治具の横滑り防止突起１２の幅よりも広ければよく、真空吸着治具の形状により異なる。例えば、真空吸着治具の横滑り防止突起１２の幅が１ｍｍ、治具内にチップの位置精度が±１ｍｍである場合には、炭素系接着層２の不連続部分の長さを３ｍｍ程度とすれば良い。チップの一辺の長さが５ｍｍ程度以上であれば、このような寸法で良い。なお、炭素系接着層２の厚み、半導体素子１表面の形成幅は、それぞれ、１０〜２０ｎｍ程度、３００〜１０００μｍ程度あれば良い。   In FIG. 12, the carbon-based adhesive layer 2 is formed on a part of the side surface. However, if the carbon-based adhesive layer 2 is formed by covering the stencil mask after cutting the chip, as shown in FIGS. 13 (a) and 13 (b). In addition, the carbon-based adhesive layer 2 can be formed on the entire side surface of the semiconductor element 1. The formation length in the side direction of the carbon-based adhesive layer 2 may be 10 μm or more. Further, the length of the region where the carbon-based adhesive layer 2 is not formed on one side may be wider than the width of the skid prevention protrusion 12 of the Bernoulli-type vacuum suction jig, for example, for chip conveyance. It depends on the shape. For example, when the width of the skid prevention protrusion 12 of the vacuum suction jig is 1 mm and the position accuracy of the chip in the jig is ± 1 mm, the length of the discontinuous portion of the carbon-based adhesive layer 2 should be about 3 mm. It ’s fine. If the length of one side of the chip is about 5 mm or more, such a dimension is sufficient. The thickness of the carbon-based adhesive layer 2 and the formation width of the surface of the semiconductor element 1 may be about 10 to 20 nm and about 300 to 1000 μm, respectively.

以上のように構成された半導体モジュールにおいては、半導体素子１の表面側の外周部の外周角部に炭素系接着層２を設けることにより、モールド樹脂３との接着性が向上する。これにより、半導体素子１上に形成したモールド樹脂３の半導体素子１の表面側の外周部を基点とした剥離が抑制され、ヒートサイクル、パワーサイクル試験での劣化が無く信頼性が向上する。   In the semiconductor module configured as described above, the adhesion to the mold resin 3 is improved by providing the carbon-based adhesive layer 2 at the outer peripheral corner of the outer peripheral portion on the surface side of the semiconductor element 1. As a result, peeling of the mold resin 3 formed on the semiconductor element 1 from the outer peripheral portion on the surface side of the semiconductor element 1 as a base point is suppressed, and there is no deterioration in the heat cycle and power cycle tests, and the reliability is improved.

また、真空吸着治具に接触する半導体素子１の辺部に炭素系接着層２が形成されていないので、真空吸着時に炭素系接着層２を損傷することがなく、半導体モジュールの製造工程で発生する損傷による信頼性の劣化を抑制することができる。   Further, since the carbon-based adhesive layer 2 is not formed on the side portion of the semiconductor element 1 that contacts the vacuum suction jig, the carbon-based adhesive layer 2 is not damaged during vacuum suction, and is generated in the manufacturing process of the semiconductor module. It is possible to suppress deterioration of reliability due to damage.

さらに、半導体素子１上における炭素系接着層２の形成面積を小さくすることができるので、炭素系接着層２自身の膜応力による炭素系接着層２の剥離を抑制することができる。   Furthermore, since the formation area of the carbon-based adhesive layer 2 on the semiconductor element 1 can be reduced, peeling of the carbon-based adhesive layer 2 due to the film stress of the carbon-based adhesive layer 2 itself can be suppressed.

また、炭素系接着層２を形成した半導体素子１の変形を抑制できるので、半導体素子１の実装時に半導体素子１の傾きを抑制できるので、生産性を向上することができる。   In addition, since deformation of the semiconductor element 1 on which the carbon-based adhesive layer 2 is formed can be suppressed, the inclination of the semiconductor element 1 can be suppressed when the semiconductor element 1 is mounted, so that productivity can be improved.

さらに、半導体素子１の表面側の外周部と半導体素子１の側面にも炭素系接着層２を設けることにより、炭素系接着層２とモールド樹脂３との接触面積が増加することにより、モールド樹脂３との接着性がさらに向上する。これにより、半導体素子１上に形成したモールド樹脂３の半導体素子１の表面側の外周部を基点とした剥離が抑制され、ヒートサイクル、パワーサイクル試験での劣化が無く信頼性が向上する。   Further, by providing the carbon-based adhesive layer 2 on the outer peripheral portion on the surface side of the semiconductor element 1 and the side surface of the semiconductor element 1, the contact area between the carbon-based adhesive layer 2 and the mold resin 3 is increased. 3 is further improved. As a result, peeling of the mold resin 3 formed on the semiconductor element 1 from the outer peripheral portion on the surface side of the semiconductor element 1 as a base point is suppressed, and there is no deterioration in the heat cycle and power cycle tests, and the reliability is improved.

なお、実施の形態１から実施の形態５においてはトランスファーモールド樹脂に対する接着力改善効果があることを記載したが、ケース型のパッケージの組合せとなる、ＳｉＣ基板表面とシリコン樹脂やゴム材料、ポリイミド樹脂でも同様の効果がある。   In the first to fifth embodiments, it has been described that there is an effect of improving the adhesive strength to the transfer mold resin. However, the surface of the SiC substrate and the silicon resin, rubber material, polyimide resin, which is a combination of a case type package But it has the same effect.

なお、実施の形態６および実施の形態７においても、トランスファーモールド樹脂に対する接着力改善効果があることを記載したが、ケース型のパッケージの組合せとなる、ＳｉＣ基板表面とシリコン樹脂やゴム材料、ポリイミド樹脂でも同様の効果がある。   In Embodiments 6 and 7, it has been described that there is an effect of improving the adhesive strength to the transfer mold resin. However, the SiC substrate surface and silicon resin, rubber material, polyimide, which are a combination of case-type packages, are described. Resin has the same effect.

１ 半導体素子、２ 炭素系接着層、３ モールド樹脂、４ はんだ、５ 端子板、
６ 冷却基板、７ 絶縁シート、８ 放熱板、１１ コレット、１２ 横滑り防止突起、１３ 送風口、１４ 空気流れ。1 semiconductor element, 2 carbon adhesive layer, 3 mold resin, 4 solder, 5 terminal board,
6 Cooling board, 7 Insulating sheet, 8 Heat sink, 11 Collet, 12 Side slip prevention protrusion, 13 Air outlet, 14 Air flow.

Claims (6)

基板に搭載された半導体素子と、
前記半導体素子の前記基板に対向する面の反対側の面の外周部のみに設けられた水素化アモルファスカーボンで形成された炭素系接着層と、
前記炭素系接着層と接し、前記基板と前記半導体素子とを封止する封止樹脂と、
を備えたことを特徴とする半導体モジュール。 A semiconductor element mounted on a substrate;
A carbon-based adhesive layer formed of hydrogenated amorphous carbon provided only on the outer periphery of the surface opposite to the surface facing the substrate of the semiconductor element;
A sealing resin in contact with the carbon-based adhesive layer and sealing the substrate and the semiconductor element;
A semiconductor module comprising: 基板に搭載された半導体素子と、
前記半導体素子の前記基板に対向する面の反対側の面の外周部と側面のみに設けられた水素化アモルファスカーボンで形成された炭素系接着層と、
前記炭素系接着層と接し、前記基板と前記半導体素子とを封止する封止樹脂と、
を備えたことを特徴とする半導体モジュール。 A semiconductor element mounted on a substrate;
A carbon-based adhesive layer formed of hydrogenated amorphous carbon provided only on the outer peripheral portion and the side surface of the surface opposite to the surface facing the substrate of the semiconductor element;
A sealing resin in contact with the carbon-based adhesive layer and sealing the substrate and the semiconductor element;
A semiconductor module comprising: 基板に搭載された半導体素子と、
前記半導体素子の前記基板に対向する面の反対側の面の外周角部のみに設けられた水素化アモルファスカーボンで形成された炭素系接着層と、
前記炭素系接着層と接し、前記基板と前記半導体素子とを封止する封止樹脂と、
を備えたことを特徴とする半導体モジュール。 A semiconductor element mounted on a substrate;
A carbon-based adhesive layer formed of hydrogenated amorphous carbon provided only on the outer peripheral corner of the surface opposite to the surface facing the substrate of the semiconductor element;
A sealing resin in contact with the carbon-based adhesive layer and sealing the substrate and the semiconductor element;
A semiconductor module comprising: 基板に搭載された半導体素子と、
前記半導体素子の前記基板に対向する面の反対側の面の外周角部と側面のみに設けられた水素化アモルファスカーボンで形成された炭素系接着層と、
前記炭素系接着層と接し、前記基板と前記半導体素子とを封止する封止樹脂と、
を備えたことを特徴とする半導体モジュール。 A semiconductor element mounted on a substrate;
A carbon-based adhesive layer formed of hydrogenated amorphous carbon provided only on the outer peripheral corners and side surfaces of the surface opposite to the surface facing the substrate of the semiconductor element;
A sealing resin in contact with the carbon-based adhesive layer and sealing the substrate and the semiconductor element;
A semiconductor module comprising: 前記炭素系接着層は、前記封止樹脂と接する面が粗化されたことを特徴とする請求項１から請求項４のいずれか１項に記載の半導体モジュール。 The semiconductor module according to any one of claims 1 to 4, wherein the carbon-based adhesive layer has a roughened surface in contact with the sealing resin. 前記炭素系接着層は、水酸基が付与されたことを特徴とする請求項１から請求項５のいずれか１項に記載の半導体モジュール。 The semiconductor module according to any one of claims 1 to 5, wherein the carbon-based adhesive layer is provided with a hydroxyl group.
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