JP6019127B2 - スパイクアニールプロセスを制御する方法及びシステム - Google Patents

スパイクアニールプロセスを制御する方法及びシステム Download PDF

Info

Publication number
JP6019127B2
JP6019127B2 JP2014540008A JP2014540008A JP6019127B2 JP 6019127 B2 JP6019127 B2 JP 6019127B2 JP 2014540008 A JP2014540008 A JP 2014540008A JP 2014540008 A JP2014540008 A JP 2014540008A JP 6019127 B2 JP6019127 B2 JP 6019127B2
Authority
JP
Japan
Prior art keywords
laser
absorption
substrate
layers
wavelength
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2014540008A
Other languages
English (en)
Japanese (ja)
Other versions
JP2014534641A (ja
Inventor
シアー，スティーヴン，エイ
カルカシ，マイケル
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of JP2014534641A publication Critical patent/JP2014534641A/ja
Application granted granted Critical
Publication of JP6019127B2 publication Critical patent/JP6019127B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2014540008A 2011-11-04 2012-10-29 スパイクアニールプロセスを制御する方法及びシステム Active JP6019127B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201161556126P 2011-11-04 2011-11-04
US61/556,126 2011-11-04
US201261652127P 2012-05-25 2012-05-25
US61/652,127 2012-05-25
PCT/US2012/062434 WO2013066820A1 (en) 2011-11-04 2012-10-29 Method and system for controlling a spike anneal process

Publications (2)

Publication Number Publication Date
JP2014534641A JP2014534641A (ja) 2014-12-18
JP6019127B2 true JP6019127B2 (ja) 2016-11-02

Family

ID=48192662

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014540008A Active JP6019127B2 (ja) 2011-11-04 2012-10-29 スパイクアニールプロセスを制御する方法及びシステム

Country Status (5)

Country Link
US (1) US9085045B2 (zh)
JP (1) JP6019127B2 (zh)
KR (1) KR101590741B1 (zh)
TW (1) TWI585860B (zh)
WO (1) WO2013066820A1 (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10032876B2 (en) 2014-03-13 2018-07-24 Taiwan Semiconductor Manufacturing Company, Ltd. Contact silicide having a non-angular profile
US20150372099A1 (en) * 2014-06-19 2015-12-24 Taiwan Semiconductor Manufacturing Company, Ltd. Contact silicide formation using a spike annealing process
KR102447144B1 (ko) * 2015-01-09 2022-09-26 삼성전자주식회사 포토 마스크 제조 방법, 포토레지스트 패턴 형성 방법 및 반도체 장치의 제조 방법
FR3033079B1 (fr) * 2015-02-19 2018-04-27 Ion Beam Services Procede de passivation d'un substrat et machine pour la mise en oeuvre de ce procede
US10541151B1 (en) 2018-07-12 2020-01-21 International Business Machines Corporation Disposable laser/flash anneal absorber for embedded neuromorphic memory device fabrication
US11782346B2 (en) * 2019-09-25 2023-10-10 Tokyo Electron Limited Method of patterning a substrate using a sidewall spacer etch mask
CN112959005B (zh) * 2021-02-03 2023-01-24 西北工业大学 一种在铜表面制造长期高效减反微纳结构的方法及应用
JP2023141135A (ja) * 2022-03-23 2023-10-05 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
US20240201077A1 (en) * 2022-12-14 2024-06-20 Applied Materials, Inc. Phase-Resolved Optical Metrology for Substrates

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6943900B2 (en) 2000-09-15 2005-09-13 Timbre Technologies, Inc. Generation of a library of periodic grating diffraction signals
JP4534419B2 (ja) * 2002-01-30 2010-09-01 株式会社ニコン 電子装置
US6897131B2 (en) 2002-09-20 2005-05-24 Applied Materials, Inc. Advances in spike anneal processes for ultra shallow junctions
US7115479B2 (en) 2002-11-26 2006-10-03 Intel Corporation Sacrificial annealing layer for a semiconductor device and a method of fabrication
JP2005101196A (ja) * 2003-09-24 2005-04-14 Hitachi Ltd 半導体集積回路装置の製造方法
EP1676300B1 (en) * 2003-10-03 2014-10-01 Applied Materials, Inc. Method for annealing a substrate comprising an absorber layer
US7078302B2 (en) 2004-02-23 2006-07-18 Applied Materials, Inc. Gate electrode dopant activation method for semiconductor manufacturing including a laser anneal
US7145104B2 (en) * 2004-02-26 2006-12-05 Ultratech, Inc. Silicon layer for uniformizing temperature during photo-annealing
EP1763893A2 (en) 2004-02-27 2007-03-21 ASM America, Inc. Germanium deposition
US7279721B2 (en) 2005-04-13 2007-10-09 Applied Materials, Inc. Dual wavelength thermal flux laser anneal
JP2007115927A (ja) * 2005-10-20 2007-05-10 Tokyo Univ Of Agriculture & Technology 熱処理方法
US20080029152A1 (en) 2006-08-04 2008-02-07 Erel Milshtein Laser scribing apparatus, systems, and methods
US20080045041A1 (en) 2006-08-17 2008-02-21 Toshiba America Electronic Components, Inc. Liquid Immersion Laser Spike Anneal
US7588990B2 (en) 2006-08-31 2009-09-15 Applied Materials, Inc. Dynamic surface annealing of implanted dopants with low temperature HDPCVD process for depositing a high extinction coefficient optical absorber layer
JP2008108891A (ja) 2006-10-25 2008-05-08 Toshiba Corp 半導体装置の製造方法
CN101675117A (zh) * 2007-03-05 2010-03-17 富士胶片株式会社 光致抗蚀用化合物、光致抗蚀液及使用其的蚀刻方法
US20100084744A1 (en) * 2008-10-06 2010-04-08 Zafiropoulo Arthur W Thermal processing of substrates with pre- and post-spike temperature control
US8592309B2 (en) * 2009-11-06 2013-11-26 Ultratech, Inc. Laser spike annealing for GaN LEDs

Also Published As

Publication number Publication date
KR101590741B1 (ko) 2016-02-01
TW201347040A (zh) 2013-11-16
JP2014534641A (ja) 2014-12-18
US9085045B2 (en) 2015-07-21
WO2013066820A1 (en) 2013-05-10
US20130288487A1 (en) 2013-10-31
TWI585860B (zh) 2017-06-01
KR20140097298A (ko) 2014-08-06

Similar Documents

Publication Publication Date Title
JP6019127B2 (ja) スパイクアニールプロセスを制御する方法及びシステム
Singer et al. Alignment and reordering of a block copolymer by solvent-enhanced thermal laser direct write
US20150371908A1 (en) Methods for reducing semiconductor substrate strain variation
KR102527612B1 (ko) 저온에서의 워크피스의 열처리 및 온도 측정을 위한 시스템 및 방법
US6656749B1 (en) In-situ monitoring during laser thermal annealing
US7145104B2 (en) Silicon layer for uniformizing temperature during photo-annealing
US20140233043A1 (en) System for semiconductor device characterization using reflectivity measurement
JP2004512676A (ja) レジストの流れによるピンホール欠陥修正
US20070020783A1 (en) Method of Feed Forward Control of Scanned Rapid Thermal Processing
JP2023539512A (ja) 半導体膜厚を制御する方法
Gabran et al. Maskless pattern transfer using 355 nm laser
US20140178824A1 (en) Optimizing lithographic processes using laser annealing techniques
KR102513167B1 (ko) 워크피스의 노광 후 베이크 공정을 위한 방법 및 장치
US20070022623A1 (en) Laser surface drying
JP5396703B2 (ja) 熱処理装置及び方法、並びに半導体装置の製造方法
KR20140089854A (ko) 반도체 소자 제조 장치 및 이를 이용한 반도체 소자의 제조 방법
Timans A short history of pattern effects in thermal processing
KR20150048224A (ko) Euv 레지스트 감도 감소
Jung et al. Addressing challenges in lithography using sub-millisecond post exposure bake of chemically amplified resists
Kang et al. Optimum dose variation caused by post exposure bake temperature difference inside photoresist over different sublayers and thickness
Ho et al. Critical dimension uniformity via real-time photoresist thickness control
Tay et al. Real-time control of photoresist extinction coefficient uniformity in the microlithography process
Kiew et al. In Situ Measurement & Control of Photoresist Develpment in Microlithorgraphy
Acharya et al. Fundamental issues in millisecond annealing
JP2007052220A (ja) レジストパターンの形成方法

Legal Events

Date Code Title Description
A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20160322

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160520

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20160906

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20161003

R150 Certificate of patent or registration of utility model

Ref document number: 6019127

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250