JP6018522B2 - Substrate processing apparatus, film forming apparatus, and mask setting method - Google Patents

Description

  The present invention relates to a substrate processing apparatus, a film forming apparatus, and a mask setting method, and more particularly, to a substrate processing apparatus including a mask having a predetermined opening pattern, a film forming apparatus, and a mask setting method.

  Conventionally, a substrate processing apparatus including a mask having a predetermined opening pattern is known (for example, see Patent Document 1).

  In Patent Document 1, a nozzle that sprays a solution material for an organic EL device in a state where a voltage is applied (a state in which the solution material is charged), a solution material sprayed from the nozzle is deposited, and an organic light emitting layer or the like is deposited. An electrospray apparatus (substrate processing apparatus) including a substrate on which a thin film for an organic EL device is formed and a mask disposed above the substrate and having a predetermined opening pattern is disclosed. In this electrospray apparatus, the solution material is sprayed downward (substrate side) from the nozzle by the potential difference (electric field) between the voltage applied to the solution material and the substrate side, and through the opening of the mask. A thin film having a predetermined shape is formed by being deposited on the substrate.

  Conventionally, an electrospray apparatus in which a mask is disposed below a substrate and a nozzle is disposed below the mask is known. In this electrospray apparatus, the solution material is sprayed upward (substrate side) from the nozzle, whereby a thin film having a predetermined shape is formed on the substrate through the mask.

JP 2011-175922 A

  However, in the electrospray apparatus in which the solution material is sprayed upward (substrate side) from the nozzle, since the mask is disposed below the substrate, there is a disadvantage that the mask bends downward due to its own weight. While the substrate also bends downward due to its own weight, the mask is generally bent more than the substrate, so that a gap is formed between the substrate and the mask. For this reason, since the solution material goes around the gap between the substrate and the mask, there is a problem that the transferability of the opening pattern of the mask is deteriorated.

  The present invention has been made to solve the above-described problems, and one object of the present invention is that the transferability of the opening pattern of the mask is caused by a gap formed between the substrate and the mask. It is an object of the present invention to provide a substrate processing apparatus, a film forming apparatus, and a mask setting method capable of suppressing deterioration.

In order to achieve the above object, a substrate processing apparatus according to a first aspect of the present invention is arranged in the vicinity of a substrate and adsorbs a mask having a predetermined opening pattern and a surface of the substrate opposite to the mask. The mask is supported in a state where the vicinity of the end of the mask is supported, and the first bending deformation amount below the mask is smaller than the second bending deformation amount below the substrate. The suction part of the suction stage is configured to suck and maintain the substrate in a bent state so as to have the second bending deformation amount .

  In the substrate processing apparatus according to the first aspect, as described above, the first bending deformation amount below the mask is equal to or less than the second bending deformation amount below the substrate with the vicinity of the edge of the mask being supported. By configuring the mask so as to be in the size of the mask, by moving the mask relative to the substrate so that the mask is in close contact with the substrate, the mask is moved from the state having the first deflection amount to the second. Since the bending deformation amount can be obtained, the mask and the substrate can be brought into close contact with each other without a gap between the mask and the substrate. As a result, it is possible to prevent the transferability of the opening pattern of the mask from being deteriorated due to the formation of a gap between the substrate and the mask.

Also, the mask substrate further comprising a suction stage having a suction portion for sucking the surface of the opposite side, the suction portion of the suction stage is adsorbed in a state of bending the substrate to have a second bending deformation amount Configured to maintain. As a result , even when the substrate is not bent, the substrate can be bent by the suction portion of the suction stage so as to have the second bending deformation amount. Therefore, the first bending downward of the mask can be easily performed. The amount of deformation can be made smaller than the amount of second bending deformation downward of the substrate.

  In this case, preferably, the surface of the suction portion of the suction stage has a bent shape corresponding to the second bending deformation amount of the substrate. If comprised in this way, a board | substrate can be easily made into the state bent so that it might have 2nd bending deformation amount only by making a board | substrate adsorb | suck to the surface of an adsorption | suction part.

  In the substrate processing apparatus according to the first aspect, preferably, when the mask is moved relative to the substrate so as to be in close contact with the substrate in a state where the vicinity of the end of the mask is supported, As the contact state progresses, the state is changed from the state having the first bending deformation amount to the state having the second bending deformation amount. If comprised in this way, the mask in the state which has the 1st bending deformation amount can be easily changed to the state which has the 2nd bending deformation amount by moving a mask relatively with respect to a board | substrate. .

According to a second aspect of the present invention, there is provided a film forming apparatus, comprising: a nozzle for spraying a solution material in a state where a predetermined voltage is applied and depositing a thin film on a flexurally deformed substrate positioned above; A mask having a predetermined opening pattern disposed near the substrate, and a suction stage having a suction portion that sucks the surface opposite to the mask of the substrate, the mask being supported near the edge of the mask In this state, the first bending deformation amount below the mask is configured to be equal to or smaller than the second bending deformation amount below the substrate, and the suction portion of the suction stage deforms the substrate into the second bending deformation. It is comprised so that it may adsorb | suck and maintain in the state bent so that it may have quantity .

  In the film forming apparatus according to the second aspect, as described above, the first bending deformation amount below the mask is equal to or less than the second bending deformation amount below the substrate in a state where the vicinity of the end portion of the mask is supported. By configuring the mask so as to be in the size of the mask, by moving the mask relative to the substrate so that the mask is in close contact with the substrate, the mask is moved from the state having the first deflection amount to the second. Since the bending deformation amount can be obtained, the mask and the substrate can be brought into close contact with each other without a gap between the mask and the substrate. As a result, it is possible to provide a film forming apparatus capable of suppressing deterioration in transferability of the opening pattern of the mask due to a gap between the substrate and the mask.

In the mask setting method according to the third aspect of the present invention, the first bending deformation amount downward of the mask having the predetermined opening pattern is bent so as to have the second bending deformation amount by the suction portion of the suction stage. A step of supporting the vicinity of the edge of the mask so as to have a magnitude equal to or less than the second downward deformation amount of the substrate held by suction in the state, and the substrate in a state of supporting the vicinity of the edge of the mask Moving the mask relative to the substrate so as to be in close contact with the substrate, and changing the mask from a state having the first amount of deformation to a state having the second amount of deformation.

  In the mask setting method according to the third aspect, as described above, the first downward deformation amount of the mask having the predetermined opening pattern is equal to or smaller than the second downward deformation amount of the substrate. Thus, by providing the step of supporting the vicinity of the edge of the mask, the mask is moved relative to the substrate so as to be in close contact with the substrate in the state of supporting the vicinity of the edge of the mask. By changing the mask from a state having a deformation amount to a state having a second bending deformation amount, the mask and the substrate can be brought into close contact with each other without a gap between the mask and the substrate. As a result, it is possible to provide a mask setting method capable of suppressing deterioration in transferability of the opening pattern of the mask due to the formation of a gap between the substrate and the mask.

  According to the present invention, as described above, it is possible to prevent the transferability of the opening pattern of the mask from being deteriorated due to the formation of a gap between the substrate and the mask.

1 is a perspective view of an electrospray device according to an embodiment of the present invention. 1 is a side view of an electrospray device according to an embodiment of the present invention. It is a perspective view of the adsorption | suction stage of the electrospray apparatus by one Embodiment of this invention. It is a perspective view of the mask of the electrospray apparatus by one Embodiment of this invention. It is a perspective view of the raising / lowering part of the electrospray apparatus by one Embodiment of this invention. It is a figure which shows the state before the mask of the electrospray apparatus by one Embodiment of this invention is set to a board | substrate. It is a figure which shows the state in the middle of setting the mask of the electrospray apparatus by one Embodiment of this invention to a board | substrate. It is a figure which shows the state by which the mask of the electrospray apparatus by one Embodiment of this invention was set to the board | substrate.

  DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments embodying the present invention will be described below with reference to the drawings.

  With reference to FIGS. 1-6, the structure of the electrospray apparatus 100 by this embodiment is demonstrated. The electrospray apparatus 100 is an example of the “substrate processing apparatus” and “film forming apparatus” in the present invention.

  As shown in FIGS. 1 and 2, the electrospray apparatus 100 includes a nozzle 1, a suction stage 2, a mask 3 disposed between the nozzle 1 and the suction stage 2, and the mask 3 in the direction indicated by the arrow Z <b> 1 and the arrow. And an elevating unit 4 elevating in the Z2 direction. At the time of application, a substrate 5 made of glass or the like is disposed between the suction stage 2 and the mask 3. A thin film is formed on the substrate 5 by spraying the solution material from the nozzle 1 to the substrate 5 placed on the suction stage 2 through the mask 3.

  The nozzle 1 is sprayed upward (in the direction of the arrow Z1) while applying a predetermined voltage to a solution material (for example, PEDOT / PSS which is a conductive polymer (poly (3,4-ethylenedithiophene) poly (stylensulfonate)). A thin film (not shown) is configured to be deposited on the deflected and deformed substrate 5. Specifically, the nozzle 1 is configured to be filled with a solution material, and the interior of the nozzle 1 is also configured. The electrode is provided with an electrode (not shown), and a voltage is applied to the solution material by the electrode, and a plurality of nozzles 1 are provided as shown in FIG. The plurality of nozzles 1 are arranged in a line along the side (X direction) of the substrate 5. The nozzles 1 are arranged under the mask 3. Is disposed (the arrow Z2 direction). Further, a plurality of nozzles 1 is movable in the X and Y directions.

  The suction stage 2 is made of metal and is electrically grounded. In the present embodiment, the suction stage 2 has a suction part 2a that sucks the surface of the substrate 5 opposite to the mask 3 (arrow Z1 direction side), and the suction part 2a of the suction stage 2 is The substrate 5 made of glass or the like is configured to be sucked and maintained while being bent so as to have a bending deformation amount d1. That is, the surface of the suction part 2 a of the suction stage 2 has a bending shape corresponding to the bending deformation amount d 1 of the substrate 5. The bending deformation amount d1 means a state where the central portion of the substrate 5 is bent downward by a distance d1 from a horizontal state where the substrate 5 is not bent. The suction part 2a is the surface of the suction stage 2 on the arrow Z2 direction side.

  Further, as shown in FIGS. 2 and 3, the surface of the adsorbing portion 2a is formed in a catenary curve (a curve formed when hanging with both ends of a rope or the like). Further, as shown in FIG. 3, the surface of the suction part 2a of the suction stage 2 has a downwardly convex D shape (both ends on the X direction side centered on the axis A along the Y direction and in the direction of the arrow Z1). The shape is warped.

  As shown in FIGS. 1 and 2, the substrate 5 is placed (sucked) on the lower surface (suction part 2 a) of the suction stage 2. Then, by providing a potential difference between the nozzle 1 and the adsorption stage 2, the solution material ejected from the nozzle 1 flies toward the adsorption stage 2. As a result, it is not necessary to directly apply the substrate 5 to the ground, so that it can be applied to a non-conductive substrate.

  The mask 3 is made of a resin having excellent chemical resistance, processing accuracy, dimensional stability, insulation resistance, rigidity, and the like. For example, the mask 3 is made of PTFE (Polytetrafluoroethylene), PP (Polypropylene), HDPE (High-density polyethylene), PET (Polyethylene ylene phthalate), EPOX, glass epoxy, ABS (Acryte PE). (Polyoxymethylene).

  The mask 3 is disposed in the vicinity of the substrate 5 (adhered to the lower side of the substrate 5). As shown in FIG. 4, the mask 3 is formed with a plurality of openings 31 having a predetermined opening pattern (substantially rectangular shape (substantially square shape)) in plan view. The plurality of openings 31 are arranged in a lattice shape (matrix shape). The mask 3 is formed in a substantially rectangular shape, and a through-hole 32 through which a pin 4 a (see FIG. 5) provided in the elevating part 4 passes is provided in a corner portion of the substantially rectangular mask 3. Yes. Two through holes 32 are provided along the diagonal line of the substantially rectangular mask 3.

  Moreover, as shown in FIG. 5, the raising / lowering part 4 has the plate-shaped support part 4b which supports both the edge parts 3a (refer FIG. 4) of the X direction side of the mask 3 from the downward direction. Further, a pin 4 a that engages with the through hole 32 of the mask 3 is provided at the end of the support portion 4 b on the arrow Y1 direction side (arrow Y2 direction side). Then, both end portions 3a of the mask 3 are configured to be supported by the support portion 4b in a state where the pin 4a is engaged with the through hole 32 of the mask 3.

  Here, in this embodiment, as shown in FIG. 6, the mask 3 is bent and deformed downward (in the direction of the arrow Z <b> 2) of the mask 3 with the vicinity of the end 3 a of the mask 3 supported by the elevating unit 4. The amount (d2) is configured to have a magnitude (d2 ≦ d1) that is equal to or less than the amount (d1) of bending downward of the substrate 5. FIG. 6 shows a state in which the downward deformation amount (d2) of the mask 3 is smaller than the downward deformation amount of the substrate 5 (d2 <d1). That is, the mask 3 has a shape bent in a D shape with the vicinity of the end 3a of the mask 3 supported by the elevating unit 4 (both ends 3a in the X direction are centered on the axis A along the Y direction). A shape warped in the direction of arrow Z1). Then, when the mask 3 is moved relative to the substrate 5 so as to be in close contact with the substrate 5 with the vicinity of the end 3 a of the mask 3 supported by the elevating unit 4, the mask 3 is in close contact with the substrate 5. As the state progresses, it is configured to change from a state having a bending deformation amount d2 to a state having a bending deformation amount d1 (see FIG. 2).

  Next, a method for setting the mask 3 in the electrospray apparatus 100 will be described with reference to FIGS.

  As shown in FIG. 6, the substrate 5 that has not been bent and deformed is adsorbed by the adsorption portion 2 a of the adsorption stage 2, so that the substrate 5 is bent downward so as to have a deflection amount d <b> 1. Adsorbed and maintained. Further, the vicinity of the end 3 a of the mask 3 is supported by the elevating unit 4. As a result, the mask 3 is bent downward so as to have a bending deformation amount d2 having a magnitude equal to or smaller than the bending deformation amount d1 of the substrate 5.

  Next, as shown in FIG. 7, the mask 3 is moved relative to the substrate 5 so as to be in close contact with the substrate 5 while supporting the vicinity of the end 3 a of the mask 3. Specifically, the substrate 5 (the suction stage 2) is stationary, and the mask 3 is lifted upward (in the direction of the arrow Z1) by the elevating unit 4. That is, the mask 3 is brought close to the substrate 5. As a result, the vicinity of the central portion of the substrate 5 and the vicinity of the central portion of the mask 3 are in contact with each other.

  Then, as shown in FIG. 8, the mask 3 is lifted further upward by the elevating unit 4, so that the mask 3 has a bending deformation amount d <b> 2 while the shape of the mask 3 follows the shape of the substrate 5. It changes to a state having d1. As a result, the entire lower surface (surface on the arrow Z2 direction side) of the substrate 5 and the entire upper surface (surface on the arrow Z1 direction side) of the mask 3 are in close contact with each other. Thereby, the setting of the mask 3 is completed.

  Next, the effect of this embodiment will be described.

  In the present embodiment, as described above, the amount of bending deformation d2 downward of the mask 3 is less than or equal to the amount of bending deformation d1 downward of the substrate 5 while the vicinity of the end 3a of the mask 3 is supported. The mask 3 is configured as follows. As a result, the mask 3 is moved relative to the substrate 5 so that the mask 3 is in close contact with the substrate 5, thereby changing the state in which the mask 3 has the deflection amount d 2 from the state having the deflection amount d 2. Therefore, the mask 3 and the substrate 5 can be brought into close contact with each other with no gap between the mask 3 and the substrate 5. As a result, it is possible to prevent the transferability of the opening pattern of the mask 3 from being deteriorated due to the formation of a gap between the substrate 5 and the mask 3.

  In the present embodiment, as described above, the suction stage 2 having the suction portion 2a that sucks the surface of the substrate 5 opposite to the mask 3 is provided, and the suction portion 2a of the suction stage 2 is replaced with the substrate 5. It is configured to be attracted and maintained in a state of being bent so as to have a bending deformation amount d1. Thereby, even when the substrate 5 is not bent, the substrate 5 can be bent by the suction portion 2a of the suction stage 2 so as to have the bending deformation amount d1, so that the substrate 5 can be easily moved below the mask 3. The bending deformation amount d <b> 2 can be made to be not larger than the bending deformation amount d <b> 1 downward of the substrate 5.

  In the present embodiment, as described above, the surface of the suction portion 2a of the suction stage 2 is configured to have a bending shape corresponding to the bending deformation amount d1 of the substrate 5. Thus, the substrate 5 can be easily bent to have the bending deformation amount d1 simply by adsorbing the substrate 5 to the surface of the adsorption portion 2a.

  Further, in the present embodiment, as described above, when the vicinity of the end 3a of the mask 3 is supported and moved relative to the substrate 5 so as to be in close contact with the substrate 5, The mask 3 is configured to change from a state having the bending deformation amount d2 to a state having the bending deformation amount d1 as the contact state advances. Thereby, by moving the mask 3 relatively with respect to the board | substrate 5, the mask 3 of the state which has the bending deformation amount d2 can be easily changed to the state which has the bending deformation amount d1.

  The embodiments and examples disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is shown not by the above description of the embodiments and examples but by the scope of claims for patent, and includes all modifications within the meaning and scope equivalent to the scope of claims for patent.

  For example, in the above embodiment, the substrate processing apparatus (film forming apparatus) of the present invention is shown in the form of an electrospray apparatus, but the present invention is not limited to this. The present invention may be applied to a substrate processing apparatus (film forming apparatus) other than an electrospray apparatus as long as the mask is used.

  In the above embodiment, an example in which the amount of deformation (d2) downward of the mask is smaller than the amount of deformation downward of the substrate (d2 <d1, see FIG. 6) is shown. Not limited. In the present invention, the downward deformation amount (d2) of the mask may be equal to the downward deformation amount of the substrate (d2 = d1).

  Moreover, in the said embodiment, the surface opposite to the mask of a board | substrate was made to adsorb | suck to the adsorption | suction part (surface of an adsorption | suction stage) of an adsorption | suction stage, and the board | substrate was bent so that it might have a deformation amount d1. However, the present invention is not limited to this. In the present invention, the substrate may be bent so as to have the bending deformation amount d1 by a method other than the method of adsorbing the substrate to the adsorption portion (surface) of the adsorption stage. For example, after the surface of the substrate is adsorbed by a suction pad or the like (or after the end portion of the substrate is gripped), the substrate may be bent so as to have a bending deformation amount d1.

  Moreover, although the example of the structure which only supported the both ends of the mask with the support part was shown in the said embodiment, this invention is not limited to this. For example, the amount of deformation of the mask may be temporarily made smaller than the amount of deformation of the substrate by pulling both ends of the mask outward. Then, after contacting the vicinity of the central portion of the substrate and the vicinity of the central portion of the mask, the surface of the lower surface of the substrate is made to follow the shape of the substrate while gradually reducing the tension that pulls both ends of the mask. And the entire upper surface of the mask are brought into close contact with each other. Note that when the tension is completely zero, the mask is bent and does not come into close contact with the substrate. Therefore, a tension sufficient to maintain the close contact state is necessary. Thus, by gradually reducing the tension that pulls both ends of the mask, it is possible to suppress the deformation of the opening of the mask. In addition, even when the mask bends relatively large due to its own weight, by pulling both ends of the mask outward, the amount of bending deformation of the mask can be made smaller than the amount of bending deformation of the substrate. Even when the mask is formed by this, it is possible to suppress the formation of a gap between the substrate and the mask. That is, the allowable range of the amount of deformation of the mask can be expanded.

  Further, in the above-described embodiment, the substrate and the mask are bent into a downwardly convex D shape (centering on the axis A along the Y direction (see FIG. 2), both ends of the substrate and the mask in the X direction are arrows Z1. Although an example in which the shape is warped in the direction is shown, the present invention is not limited to this. For example, the substrate and the mask may be bent into a hemisphere.

  In the above embodiment, an example in which the mask is brought into close contact with the substrate by bringing the mask closer to the substrate has been described, but the present invention is not limited to this. For example, by bringing the substrate closer to the mask (or by bringing both the substrate and the mask closer to each other), the mask and the substrate may be moved relatively to be in close contact with each other.

  Moreover, in the said embodiment, although the example in which the mask was formed from resin was shown, this invention is not limited to this. For example, the mask may be made of metal. Also in this case, the mask made of metal has an amount of bending deformation below the mask in a state where the vicinity of the end of the mask is supported, and is not more than the amount of bending deformation below the substrate adsorbed by the adsorption portion. It needs to be large.

  Moreover, although the example which arrange | positions the board | substrate which consists of glass etc. to the adsorption | suction stage was shown in the said embodiment, this invention is not limited to this. For example, a film-like substrate may be arranged on the suction stage.

DESCRIPTION OF SYMBOLS 1 Nozzle 2 Adsorption stage 2a Adsorption part 3 Mask 3a End part 5 Substrate 100 Electrospray apparatus (substrate processing apparatus, film formation apparatus)

Claims (5)

A mask disposed in the vicinity of the substrate and having a predetermined opening pattern ;
A suction stage having a suction part that sucks the surface of the substrate opposite to the mask ;
The mask is configured such that, in a state where the vicinity of the edge of the mask is supported, the first bending deformation amount below the mask is equal to or smaller than the second bending deformation amount below the substrate. and,
The substrate processing apparatus , wherein the adsorption unit of the adsorption stage is configured to adsorb and maintain the substrate in a state of being bent so as to have the second bending deformation amount . The surface of the suction portion of the suction stage has a deflection shape corresponding to the second bending deformation amount of the substrate, the substrate processing apparatus according to claim 1. As the mask is moved relative to the substrate so as to be in close contact with the substrate in a state where the vicinity of the edge of the mask is supported, the contact state with the substrate advances. the has a first deflected state with a deformation amount is configured to change a state having a second flexural deformation amount, the substrate processing apparatus according to claim 1 or 2. A nozzle that deposits a thin film on a substrate that is bent and deformed by spraying a solution material in a state where a predetermined voltage is applied;
A mask disposed in the vicinity of the substrate between the nozzle and the substrate and having a predetermined opening pattern ;
A suction stage having a suction part that sucks the surface of the substrate opposite to the mask ;
The mask is configured such that, in a state where the vicinity of the edge of the mask is supported, the first bending deformation amount below the mask is equal to or smaller than the second bending deformation amount below the substrate. and,
The film forming apparatus , wherein the suction part of the suction stage is configured to suck and maintain the substrate in a state of being bent so as to have the second bending deformation amount . The first bending deformation amount downward of the mask having a predetermined opening pattern is absorbed and maintained in a state of being bent so as to have the second bending deformation amount by the suction portion of the suction stage . so that the deformation amount less magnitude the second deflection, the steps of supporting the end portion of said mask,
From the state having the first bending deformation amount to the state having the second bending deformation amount, the mask is moved relative to the substrate so as to be in close contact with the substrate while supporting the vicinity of the edge of the mask. Changing the mask. A method for setting the mask.

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