CN106848086B - Organic Light Emitting Diode and preparation method thereof, display device - Google Patents
Organic Light Emitting Diode and preparation method thereof, display device Download PDFInfo
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- CN106848086B CN106848086B CN201710262182.3A CN201710262182A CN106848086B CN 106848086 B CN106848086 B CN 106848086B CN 201710262182 A CN201710262182 A CN 201710262182A CN 106848086 B CN106848086 B CN 106848086B
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
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- H—ELECTRICITY
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- H—ELECTRICITY
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Abstract
The present invention relates to a kind of Organic Light Emitting Diode (OLED) and its manufacturing method and a kind of display devices including the OLED.The OLED includes：Substrate；Planarization layer is formed on the substrate；First electrode layer is formed on the planarization layer；Organic luminous layer is formed in the first electrode layer；And the second electrode lay, it is formed on the organic luminous layer, wherein the part at the edge corresponding to the planarization layer of the first electrode layer has through-hole.The present invention is capable of providing a kind of structure of dark trepanning, can efficiently solve the case where inside contracting, and will not increase the process complexity in manufacturing process.
Description
Technical field
The present invention relates to display technology field, more specifically to a kind of Organic Light Emitting Diode and preparation method thereof,
And the display device including the Organic Light Emitting Diode.
Background technology
During preparing Organic Light Emitting Diode (OLED) display device, in order to reduce cost and improve production effect
Rate includes usually test technology several times in preparation process.
Wherein, life test unit LTC (Life Test Cell) structure as effective means of testing, can be very good
Verify the tests such as subsequent cell experiment and the luminescent lifetime of OLED, and whole product flow (EN, i.e. Evaluation
Notice) test evaluation.Therefore, include to prepare that there is LTC structures in the manufacturing process of many OLED displays
The step of backboard.The LTC structures that etching stopping layer ESL (Etch Stop Layer) fabric backplanes are arranged in pairs or groups at present are subsequent
It is susceptible to light-emitting zone in reliability evaluation (RA, i.e. reliability test) and inside contracts serious phenomenon, to influence to produce
Product yield.
Invention content
In order to solve defect existing in the prior art, each aspect of the present invention provide a kind of Organic Light Emitting Diode and
Preparation method, and the display device including the Organic Light Emitting Diode.
According to an aspect of the present invention, a kind of Organic Light Emitting Diode (OLED) includes：Substrate；Planarization layer is formed in
In the substrate；First electrode layer is formed on the planarization layer；Organic luminous layer is formed in the first electrode layer；
And the second electrode lay, it is formed on the organic luminous layer, wherein the first electrode layer corresponds to the planarization layer
Edge part have through-hole, the position of the through-hole in the plan view is located in the region other than the organic luminous layer.
Optionally, the slope angle of the marginal portion of the planarization layer is less than or equal to 45 degree.
Optionally, the planarization layer includes silicon-based resin material.
Optionally, the thickness of the planarization layer is 1.5 μm to 2.5 μm.
Optionally, Organic Light Emitting Diode further includes：Pixel confining layer is formed in the second electrode lay and described first
Between electrode layer, and surround the organic luminous layer.
According to another aspect of the present invention, a kind of display device, including：Display panel, including according to of the invention arbitrary real
Apply the Organic Light Emitting Diode (OLED) described in example；Scanner driver provides scanning signal to the display panel；And data
Driver provides data-signal to the display panel.
According to another aspect of the invention, a method of Organic Light Emitting Diode is prepared, including：It is formed in substrate flat
Smoothization layer；First electrode layer is formed on the planarization layer；Correspond to the planarization layer in the first electrode layer
The part at edge forms through-hole；Organic luminous layer is formed in the first electrode layer；Is formed on the organic luminous layer
Two electrode layers, wherein the through-hole be formed so that the position of the through-hole in the plan view be located at the organic luminous layer with
In outer region.
Optionally, the slope angle of the marginal portion of the planarization layer is less than or equal to 45 degree.
Optionally, the planarization layer includes silicon-based resin material, and thickness is 1.5 μm to 2.5 μm.
Optionally, this method further includes：Before forming the organic luminous layer, pixel limit is formed in first electrode layer
Given layer, the organic luminous layer are formed in the pixel confining layer.
OLED according to the present invention includes：Substrate；Planarization layer is formed on the substrate；First electrode layer is formed in
On the planarization layer；Organic luminous layer is formed in the first electrode layer；The second electrode lay is formed in organic hair
On photosphere, wherein the part at the edge corresponding to the planarization layer of the first electrode layer has through-hole.Therefore, it is possible to
A kind of structure of dark trepanning is provided, the case where inside contracting can be efficiently solved, and it is multiple to increase the technique in manufacturing process
Miscellaneous degree.
Description of the drawings
Attached drawing is to be used to provide further understanding of the present invention, an and part for constitution instruction, with following tool
Body embodiment is used to explain the present invention together, but is not construed as limiting the invention.In the accompanying drawings：
Fig. 1 is the schematic cross sectional views according to the OLED of a comparative example of the invention；
Fig. 2 is the schematic cross sectional views of OLED according to an embodiment of the invention；
Fig. 3 to Fig. 7 is the schematic cross sectional views in each stage in the preparation method of OLED according to an embodiment of the present invention.
Specific implementation mode
To make those skilled in the art more fully understand the technical solution of the disclosure, below in conjunction with the accompanying drawings and it is embodied
A kind of Organic Light Emitting Diode and preparation method thereof that mode provides the disclosure, and including the Organic Light Emitting Diode
Display device is described in further detail.
Fig. 1 is the schematic cross sectional views according to the OLED of a comparative example of the invention.Referring to Fig.1, according to one of the invention
The OLED 100 of comparative example includes：Substrate 110；Planarization layer 120 is formed in the substrate 110；First electrode layer 130, shape
At on the planarization layer 120；Organic luminous layer 140 is formed in the first electrode layer 130；The second electrode lay 150,
It is formed on the organic luminous layer 140.
As shown in Figure 1, LTC structures can be formed according to the OLED of the comparative example, therefore LTC can be carried out on this basis
Test.
In addition, as shown in fig. 1, which can also include pixel confining layer 160, second electricity can be formed in
Between pole layer 150 and the first electrode layer 130, and surround the organic luminous layer 140.Pixel confining layer 160 can be used
In the light-emitting zone for limiting OLED.That is, could be formed with organic luminous layer 140 by the region that pixel confining layer 160 surrounds, therefore
Corresponding to the light-emitting zone of the OLED.
Fig. 2 is the schematic cross sectional views of OLED according to an embodiment of the invention.With reference to Fig. 2, according to one of the invention
The OLED 200 of comparative example includes：Substrate 210；Planarization layer 220 is formed in the substrate 210；First electrode layer 230, shape
At on the planarization layer 220；Organic luminous layer 240 is formed in the first electrode layer 230；The second electrode lay 250,
It is formed on the organic luminous layer 240.As shown in Fig. 2, the OLED 100 of OLED 200 and comparative example according to the present invention it
Between difference essentially consist in：The part at the edge corresponding to the planarization layer 220 of the first electrode layer 230 has through-hole
235。
Through-hole 235 is formed in the marginal portion of planarization layer 220, therefore on the one hand can be formed in LTC structures dark
On the other hand trepanning can avoid trepanning from generating destruction to the luminous zone of LTC to solve the problems, such as that light emitting structure inside contracts.
In addition, through-hole 235 is formed in the marginal portion of planarization layer 220, therefore, when observation in the plan view is (that is, edge
Direction observation in Fig. 2 from the top down) when, the position of through-hole 235 is located in the region other than organic luminous layer 240.
In one embodiment of the invention, the slope angle of the marginal portion of planarization layer 220 is less than or equal to 45 degree.By
Slope angle in the marginal portion of planarization layer is smaller (for example, being less than 45 degree), therefore can obtain longer slope surface.Such as Fig. 2 institutes
Show, the slope angle of the marginal portion of planarization layer 220 indicates between the inclined marginal portion of planarization layer and bottom surface place plane
Angle.In this case, it can aid in formation through-hole 235 in the first electrode layer 230 corresponding to the marginal portion.
In a preferred embodiment, planarization layer 220 can be formed by resin material.It is, for example, possible to use silicon substrate tree
Fat material is forming planarization layer 220.Compared with planarization layer material (such as JEM608) commonly used in the prior art, use
The planarization layer that silicon-based resin material is formed can be more easily formed smaller slope angle, for example, can be more easily formed small
In or equal to 45 degree of slope angle.
More specifically, in one embodiment, planarization layer 220 is formed with about 2 μm of thickness.In this feelings
Under condition, the technological parameter of planarization layer 220 is formed by adjusting, such as adjusts ultraviolet bleaching (UV bleaching) parameter, it can
Easily the slope angle of silicone layer to be formed as in the range of 26 degree to 88 degree.In contrast, for example traditional
In the case of JEM608, when planarization layer 220 being equally formed with about 2 μm of thickness, by adjusting technological parameter,
The slope angle of planarization layer 220 can be only formed as in the range of 40 degree to 88 degree.
Therefore, according to this embodiment, planarization layer 220 is formed using silicone, slope angle can be more easily formed
Planarization layer less than or equal to 45 degree.
Although it should be noted that form the planarization layer 220 that thickness is about 2 μm in the above-described embodiments,
The invention is not limited thereto, and the thickness of planarization layer can change according to actual needs.For example, other implementations according to the present invention
Example, planarization layer 220 can be with about 1.5 μm to about 2.5 μm of thickness.
In addition, as shown in Figure 2, OLED 200 can also include pixel confining layer 260, can be formed in described second
Between electrode layer 250 and the first electrode layer 230, and surround the organic luminous layer 240.Pixel confining layer 260 can be with
Light-emitting zone for limiting OLED.That is, organic luminous layer 240 could be formed with by the region that pixel confining layer 260 surrounds, because
This corresponds to the light-emitting zone of the OLED.
According to another embodiment of the present invention, OLED 200 can be formed on Organic Light Emitting Diode (OLED) display
In device.Specifically, in this embodiment, OLED display may include：Display panel, including such as aforementioned arbitrary implementation
OLED described in example；Scanner driver provides scanning signal to display panel；And data driver, it is provided to display panel
Data-signal.
In this embodiment, OLED display may include various types of OLED displays, such as FPD
Device, flexible display apparatus etc..And the OLED display can be integrated into having in other devices and show image
The component or submodule of function.For example, the OLED display can be such as display, television set, mobile phone, notebook
The various display devices such as computer, e-book, tablet computer, smartwatch, wearable device, VR equipment.
Describe the preparation method of OLED 200 according to the ... of the embodiment of the present invention in detail below with reference to Fig. 3 to Fig. 7.Fig. 3
It is the schematic cross sectional views in each stage in the preparation method of OLED according to an embodiment of the present invention to Fig. 7.
With reference to Fig. 3, first, planarization layer 220 is formed in substrate 210.
Substrate 210 can be substrate, such as substrate of glass, plastic-substrates, flexible substrates etc. commonly used in the art, substrate
Silica (SiOx), silicon nitride (SiNx) etc. can be utilized to form passivation layer on 210, however the invention is not limited thereto.Base
Bottom 210 can also be the underlying structure for including other structures, for example, substrate 210 can also include being formed with the circuits knot such as TFT
The array substrate of structure could be formed with passivation layer so that TFT structure is separated with OLED on TFT circuit structures.Correspondingly, base
It can also include other circuit structures or board structure in bottom 210, will not be described in detail further herein.
The slope angle of the marginal portion of planarization layer 220 is less than or equal to 45 degree.In a preferred embodiment, planarization layer
220 can be formed by resin material.It is, for example, possible to use silicon-based resin material is forming planarization layer 220.With in the prior art
Common planarization layer material (such as JEM608) is compared, and the planarization layer formed using silicon-based resin material can be more easily
Smaller slope angle is formed, for example, the slope angle less than or equal to 45 degree can be more easily formed.
The more specific description of planarization layer 220 can participate in retouching to planarization layer 220 in the embodiment with reference to Fig. 2
It states, therefore will not be repeated again herein.
With reference to Fig. 4, first electrode layer 230 is formed in substrate 210 and planarization layer 220.First electrode layer 230 can be by
Transparent conductive oxide (TCO) formed, it is, for example, possible to use tin indium oxide (ITO) forms first electrode layer 230.However
The invention is not limited thereto, and other common electrode materials can also be used to form first electrode layer 230.
With reference to Fig. 5, through-hole is formed in the part at the edge corresponding to the planarization layer 220 of first electrode layer 230
235.Through-hole 235 is formed in the marginal portion of planarization layer 220, therefore dark trepanning on the one hand can be formed in LTC structures,
To solve the problems, such as that light emitting structure inside contracts, trepanning on the other hand can be avoided to generate destruction to the luminous zone of LTC.
In addition, through-hole 235 is formed in the marginal portion of planarization layer 220, therefore, when observation in the plan view is (that is, edge
Direction observation in Fig. 5 from the top down) when, the position of through-hole 235 be located at organic luminous layer (will be formed in subsequent step) with
In outer region.
Through-hole 235 can be formed by different methods.For example, in one embodiment, can be formed using photoetching process
Through-hole 2 35.Specifically, then photomask can be utilized to photic by coating photoresist in first electrode layer 230
Resist is exposed, develop after, form the photoengraving pattern corresponding to through-hole 2 35.Then, first electrode layer 230 is lost
It carves, to remove the part corresponding to through-hole 2 35 of first electrode layer 230, first through hole is formed in first electrode layer 230
235.It should be appreciated that above-mentioned photoetching process can be the photoetching process being individually performed, can also be the work with the other patterns of formation
The photoetching process executed together during skill.
In addition, in another embodiment, through-hole 2 35 can also be formed using other techniques.For example, forming the
After one electrode layer 230, can remove first electrode layer 230 using techniques such as laser cuttings corresponds to through-hole 235
Part, to form through-hole 235 in first electrode layer 230.
Although it will be appreciated by those skilled in the art that illustrating only two through-holes 235 in attached drawing, the present invention is simultaneously unlimited
The quantity of through-hole 235 processed as needed, can also form 1 or more through-hole 235 in other embodiments.
Optionally, with reference to Fig. 5, pixel confining layer 260 can be formed in first electrode layer 230, pixel confining layer 260 can
For limiting the light-emitting zone of OLED.That is, organic luminous layer could be formed with by the region that pixel confining layer 260 surrounds, because
This corresponds to the light-emitting zone of the OLED.In addition, as shown in figure 5, when forming pixel confining layer 260 after forming through-hole 235
When, the material of pixel confining layer 260 can be filled into through-hole 235.It will be appreciated by those skilled in the art that pixel confining layer
260 are not essential, and other embodiments according to the present invention can not also form pixel confining layer 260.
With reference to Fig. 6, organic luminous layer 240 is formed in first electrode layer 230.Organic luminous layer 240 includes organic light emission
Material, when voltage is applied to organic luminous layer 240, organic luminous layer can send out the light with specific wavelength.It can lead to
The mode for crossing vapor deposition forms organic luminous layer 240 in first electrode layer 230, however the invention is not limited thereto.
As shown in Figure 6, when being formed with pixel confining layer 260 in first electrode layer 230, organic luminous layer 240 can be with
It is formed in the region surrounded by pixel confining layer 260, to form the light-emitting zone of the OLED.
With reference to Fig. 7, the second electrode lay 250 is formed on organic luminous layer 240.As shown in fig. 7, through the above steps, shape
At the OLED with LTC structures, therefore the OLED can be tested in LTC tests.
Although in addition, it will be appreciated by those skilled in the art that not being expressly recited in the present invention, for LTC test conjunctions
The OLED 200 of lattice may also pass through the techniques such as encapsulation and be ultimately formed into the product that can be dispatched from the factory.
It should be noted that OLED according to the ... of the embodiment of the present invention and its preparation has been described in detail with reference to the appended drawings
Method and display device including the OLED, however the concrete structure of the OLED of the present invention is not limited to specifically show in attached drawing
The structure gone out, those skilled in the art according to actual needs, can be in the range of present inventive concepts to the concrete structure of OLED
And the specific implementation of preparation method is adjusted.Therefore, attached drawing is only exemplary, and is not intended in any way
Limit the specific implementation of the present invention.
According to the present invention, a kind of OLED is provided, including：Substrate；Planarization layer is formed on the substrate；First electricity
Pole layer, is formed on the planarization layer；Organic luminous layer is formed in the first electrode layer；The second electrode lay is formed in
On the organic luminous layer, wherein the part at the edge corresponding to the planarization layer of the first electrode layer has through-hole.
Therefore, it is possible to provide a kind of structure of dark trepanning, the case where inside contracting can be efficiently solved, and will not increase in manufacturing process
Process complexity.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, however the present invention is not limited thereto.For those skilled in the art, in the essence for not departing from the present invention
In the case of refreshing and essence, various changes and modifications can be made therein, these variations and modifications are also considered as protection scope of the present invention.
Claims (8)
1. a kind of Organic Light Emitting Diode, including：
Substrate；
Planarization layer is formed on the substrate；
First electrode layer is formed on the planarization layer；
Organic luminous layer is formed in the first electrode layer；And
The second electrode lay is formed on the organic luminous layer,
Wherein, the part at the edge corresponding to the planarization layer of the first electrode layer has through-hole, and the through-hole is flat
Position in the figure of face is located in the region other than the organic luminous layer,
Wherein, the slope angle of the marginal portion of the planarization layer is less than or equal to 45 degree, and the through-hole is formed in the slope angle
In first electrode layer in slope surface.
2. Organic Light Emitting Diode according to claim 1, wherein the planarization layer includes silicon-based resin material.
3. Organic Light Emitting Diode according to claim 2, wherein the thickness of the planarization layer is 1.5 μm to 2.5 μ
m。
4. Organic Light Emitting Diode according to claim 1, further includes：
Pixel confining layer is formed between the second electrode lay and the first electrode layer, and surrounds the organic light emission
Layer.
5. a kind of display device, including：
Display panel includes the Organic Light Emitting Diode according to any one of claim 1-4；
Scanner driver provides scanning signal to the display panel；And
Data driver provides data-signal to the display panel.
6. a kind of method preparing Organic Light Emitting Diode, including：
Planarization layer is formed in substrate；
First electrode layer is formed on the planarization layer；
Through-hole is formed in the part at the edge corresponding to the planarization layer of the first electrode layer；
Organic luminous layer is formed in the first electrode layer；
The second electrode lay is formed on the organic luminous layer,
Wherein, the through-hole is formed so that the area that the position of the through-hole in the plan view is located at other than the organic luminous layer
In domain,
Wherein, the slope angle of the marginal portion of the planarization layer is less than or equal to 45 degree, and the through-hole is formed in the slope angle
In first electrode layer in slope surface.
7. according to the method described in claim 6, wherein, the planarization layer includes silicon-based resin material, and thickness is 1.5 μm
To 2.5 μm.
8. according to the method described in claim 6, further including：
Before forming the organic luminous layer, pixel confining layer is formed in first electrode layer, the organic luminous layer is formed
In the pixel confining layer.
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| CN105874882A (en) * | 2014-02-28 | 2016-08-17 | Jsr株式会社 | Display or illumination device, and method for forming insulating film |
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